WO2012031096A3 - Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication - Google Patents
Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication Download PDFInfo
- Publication number
- WO2012031096A3 WO2012031096A3 PCT/US2011/050174 US2011050174W WO2012031096A3 WO 2012031096 A3 WO2012031096 A3 WO 2012031096A3 US 2011050174 W US2011050174 W US 2011050174W WO 2012031096 A3 WO2012031096 A3 WO 2012031096A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diodes
- light emitting
- electronic apparatus
- power generating
- microns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/85—Packages
- H10H29/857—Interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/20—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00
- H10H29/24—Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00 comprising multiple light-emitting semiconductor devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/80—Constructional details
- H10H29/85—Packages
- H10H29/855—Optical field-shaping means, e.g. lenses
- H10H29/8552—Light absorbing arrangements, e.g. black matrix
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
- H01L2224/95101—Supplying the plurality of semiconductor or solid-state bodies in a liquid medium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
L'invention concerne, à titre d'exemple, une composition imprimable d'une suspension liquide ou de gel de diodes comprenant une pluralité de diodes, un premier solvant et/ou un modificateur de viscosité. Un appareil illustratif comprend : une pluralité de diodes ; au moins une quantité à l'état de traces d'un premier solvant ; et un film polymère ou de résine entourant au moins partiellement chaque diode de la pluralité de diodes. Diverses diodes illustratives ont une dimension latérale comprise entre environ 10 et 50 microns et une hauteur comprise entre environ 5 à 25 microns. D'autres modes de réalisation peuvent également comprendre une pluralité de particules sensiblement chimiquement inertes ayant une plage de tailles comprise entre environ 10 et environ 50 microns.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2011/050174 WO2012031096A2 (fr) | 2010-09-01 | 2011-09-01 | Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication |
| KR1020137008391A KR102030331B1 (ko) | 2010-09-01 | 2011-09-01 | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 |
| EP11822653.9A EP2612380A4 (fr) | 2010-09-01 | 2011-09-01 | Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication |
| CN201180052548.5A CN103582962B (zh) | 2010-09-01 | 2011-09-01 | 发光或动力生成装置 |
| KR1020197028661A KR102156532B1 (ko) | 2010-09-01 | 2011-09-01 | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 |
| KR1020217035378A KR102404843B1 (ko) | 2010-09-01 | 2011-09-01 | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 |
| KR1020207025886A KR102321916B1 (ko) | 2010-09-01 | 2011-09-01 | 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법 |
Applications Claiming Priority (23)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37928410P | 2010-09-01 | 2010-09-01 | |
| US37922510P | 2010-09-01 | 2010-09-01 | |
| US61/379,225 | 2010-09-01 | ||
| US61/379,284 | 2010-09-01 | ||
| US37982010P | 2010-09-03 | 2010-09-03 | |
| US37983010P | 2010-09-03 | 2010-09-03 | |
| US61/379,820 | 2010-09-03 | ||
| US61/379,830 | 2010-09-03 | ||
| US13/223,279 | 2011-08-31 | ||
| US13/223,294 | 2011-08-31 | ||
| US13/223,302 US8846457B2 (en) | 2007-05-31 | 2011-08-31 | Printable composition of a liquid or gel suspension of diodes |
| US13/223,293 | 2011-08-31 | ||
| US13/223,289 | 2011-08-31 | ||
| US13/223,289 US9018833B2 (en) | 2007-05-31 | 2011-08-31 | Apparatus with light emitting or absorbing diodes |
| US13/223,297 US8415879B2 (en) | 2007-05-31 | 2011-08-31 | Diode for a printable composition |
| US13/223,286 US8852467B2 (en) | 2007-05-31 | 2011-08-31 | Method of manufacturing a printable composition of a liquid or gel suspension of diodes |
| US13/223,279 US8809126B2 (en) | 2007-05-31 | 2011-08-31 | Printable composition of a liquid or gel suspension of diodes |
| US13/223,297 | 2011-08-31 | ||
| US13/223,293 US8877101B2 (en) | 2007-05-31 | 2011-08-31 | Method of manufacturing a light emitting, power generating or other electronic apparatus |
| US13/223,286 | 2011-08-31 | ||
| US13/223,302 | 2011-08-31 | ||
| US13/223,294 US8674593B2 (en) | 2007-05-31 | 2011-08-31 | Diode for a printable composition |
| PCT/US2011/050174 WO2012031096A2 (fr) | 2010-09-01 | 2011-09-01 | Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2012031096A2 WO2012031096A2 (fr) | 2012-03-08 |
| WO2012031096A3 true WO2012031096A3 (fr) | 2014-03-20 |
Family
ID=48607508
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US2011/050174 Ceased WO2012031096A2 (fr) | 2010-09-01 | 2011-09-01 | Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2612380A4 (fr) |
| KR (4) | KR102321916B1 (fr) |
| CN (1) | CN103582962B (fr) |
| WO (1) | WO2012031096A2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2954361B1 (fr) | 2009-12-23 | 2012-06-15 | Arjo Wiggins Fine Papers Ltd | Feuille imprimable ultra lisse et recyclable et son procede de fabrication |
| BR112014017150A8 (pt) | 2012-01-13 | 2017-07-04 | Arjo Wiggins Fine Papers Ltd | método para a produção de uma folha |
| DE102015215599A1 (de) | 2015-08-14 | 2017-02-16 | Audi Ag | Energiespeicheranordnung, insbesondere für ein Kraftfahrzeug, Kraftfahrzeug und Verfahren zur Herstellung einer Energiespeicheranordnung |
| CN111261653B (zh) * | 2018-11-30 | 2023-08-01 | 成都辰显光电有限公司 | 微型发光二极管、显示面板及其转移方法 |
| KR102731021B1 (ko) * | 2020-01-23 | 2024-11-15 | 삼성디스플레이 주식회사 | 광 분해성 증점제, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법 |
| KR102791991B1 (ko) * | 2019-03-18 | 2025-04-07 | 삼성디스플레이 주식회사 | 발광 소자 용매, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법 |
| KR102844621B1 (ko) * | 2020-04-22 | 2025-08-11 | 삼성디스플레이 주식회사 | 발광 소자 잉크 및 표시 장치의 제조 방법 |
| CN111739789B (zh) * | 2020-06-30 | 2024-05-03 | 安徽安美半导体有限公司 | 一种二极管的返工清洗工艺 |
| KR102869879B1 (ko) * | 2021-02-03 | 2025-10-10 | 삼성전자주식회사 | 마이크로 led 현탁액 토출 장치 및 마이크로 led 전사 방법 |
| US12328931B2 (en) | 2022-03-04 | 2025-06-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid integrated circuit dies and methods of forming the same |
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| US6611002B2 (en) * | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| US6871982B2 (en) * | 2003-01-24 | 2005-03-29 | Digital Optics International Corporation | High-density illumination system |
| US20050146870A1 (en) * | 2004-01-06 | 2005-07-07 | Jeng-Shyong Wu | Elongated flexible lighting equipment and fabricating method of same |
| US6936193B2 (en) * | 2003-04-14 | 2005-08-30 | Research Frontiers Incorporated | Suspended particle device light valve film |
| US20070131925A1 (en) * | 2004-03-16 | 2007-06-14 | Paul Shalk | Organic light-emitting diode |
| US20080121899A1 (en) * | 2006-11-07 | 2008-05-29 | World Properties, Inc. | Transparent electrode for LED array |
| US20080274574A1 (en) * | 2007-03-20 | 2008-11-06 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
| US20090159907A1 (en) * | 2004-09-28 | 2009-06-25 | Wang Nang Wang | Textured light emitting diodes |
| US7722953B2 (en) * | 2001-07-02 | 2010-05-25 | Brian A. Korgel | Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same |
| US20100167441A1 (en) * | 2007-05-31 | 2010-07-01 | Nthdegree Technologies Worldwide Inc. | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System |
| US20100187482A1 (en) * | 2007-04-20 | 2010-07-29 | Max-Planck-Gesellschaft Zur Förderung Der Wissensc | Highly Conductive, Transparent Carbon Films as Electrode Materials |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5545291A (en) * | 1993-12-17 | 1996-08-13 | The Regents Of The University Of California | Method for fabricating self-assembling microstructures |
| US5824186A (en) * | 1993-12-17 | 1998-10-20 | The Regents Of The University Of California | Method and apparatus for fabricating self-assembling microstructures |
| US5469020A (en) * | 1994-03-14 | 1995-11-21 | Massachusetts Institute Of Technology | Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes |
| JPH0955538A (ja) * | 1995-08-10 | 1997-02-25 | Furukawa Electric Co Ltd:The | 多波長発光素子 |
| WO2000045443A1 (fr) * | 1999-01-28 | 2000-08-03 | Nova Crystals, Inc. | Diodes electroluminescentes a performances elevees |
| US7858994B2 (en) * | 2006-06-16 | 2010-12-28 | Articulated Technologies, Llc | Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements |
| US7476557B2 (en) | 2004-03-29 | 2009-01-13 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
| US7554257B2 (en) * | 2005-03-02 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Method to generate high efficient devices which emit high quality light for illumination |
| JP4992282B2 (ja) * | 2005-06-10 | 2012-08-08 | ソニー株式会社 | 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器 |
| FR2892594B1 (fr) * | 2005-10-21 | 2007-12-07 | Saint Gobain | Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications |
| JP4899675B2 (ja) * | 2006-07-12 | 2012-03-21 | ソニー株式会社 | 実装方法、電子機器の製造方法および発光ダイオードディスプレイの製造方法 |
| JP2008141026A (ja) * | 2006-12-04 | 2008-06-19 | Sony Corp | 電子機器及びその製造方法、並びに、発光ダイオード表示装置及びその製造方法 |
| US8889216B2 (en) | 2007-05-31 | 2014-11-18 | Nthdegree Technologies Worldwide Inc | Method of manufacturing addressable and static electronic displays |
| US7874474B2 (en) * | 2008-01-22 | 2011-01-25 | University Of Washington | Self-assembly of elements using microfluidic traps |
| JP2013074070A (ja) * | 2011-09-27 | 2013-04-22 | Fujitsu Ltd | 半導体装置及び半導体装置の製造方法 |
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2011
- 2011-09-01 KR KR1020207025886A patent/KR102321916B1/ko not_active Expired - Fee Related
- 2011-09-01 KR KR1020217035378A patent/KR102404843B1/ko active Active
- 2011-09-01 WO PCT/US2011/050174 patent/WO2012031096A2/fr not_active Ceased
- 2011-09-01 KR KR1020137008391A patent/KR102030331B1/ko not_active Expired - Fee Related
- 2011-09-01 EP EP11822653.9A patent/EP2612380A4/fr not_active Withdrawn
- 2011-09-01 KR KR1020197028661A patent/KR102156532B1/ko active Active
- 2011-09-01 CN CN201180052548.5A patent/CN103582962B/zh active Active
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| US6611002B2 (en) * | 2001-02-23 | 2003-08-26 | Nitronex Corporation | Gallium nitride material devices and methods including backside vias |
| US7722953B2 (en) * | 2001-07-02 | 2010-05-25 | Brian A. Korgel | Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same |
| US6871982B2 (en) * | 2003-01-24 | 2005-03-29 | Digital Optics International Corporation | High-density illumination system |
| US6936193B2 (en) * | 2003-04-14 | 2005-08-30 | Research Frontiers Incorporated | Suspended particle device light valve film |
| US20050146870A1 (en) * | 2004-01-06 | 2005-07-07 | Jeng-Shyong Wu | Elongated flexible lighting equipment and fabricating method of same |
| US20070131925A1 (en) * | 2004-03-16 | 2007-06-14 | Paul Shalk | Organic light-emitting diode |
| US20090159907A1 (en) * | 2004-09-28 | 2009-06-25 | Wang Nang Wang | Textured light emitting diodes |
| US20080121899A1 (en) * | 2006-11-07 | 2008-05-29 | World Properties, Inc. | Transparent electrode for LED array |
| US20080274574A1 (en) * | 2007-03-20 | 2008-11-06 | Luminus Devices, Inc. | Laser liftoff structure and related methods |
| US20100187482A1 (en) * | 2007-04-20 | 2010-07-29 | Max-Planck-Gesellschaft Zur Förderung Der Wissensc | Highly Conductive, Transparent Carbon Films as Electrode Materials |
| US20100167441A1 (en) * | 2007-05-31 | 2010-07-01 | Nthdegree Technologies Worldwide Inc. | Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200106995A (ko) | 2020-09-15 |
| KR20210136146A (ko) | 2021-11-16 |
| KR20190116535A (ko) | 2019-10-14 |
| KR20130108575A (ko) | 2013-10-04 |
| KR102030331B1 (ko) | 2019-10-10 |
| EP2612380A4 (fr) | 2015-01-14 |
| KR102156532B1 (ko) | 2020-09-16 |
| CN103582962A (zh) | 2014-02-12 |
| WO2012031096A2 (fr) | 2012-03-08 |
| EP2612380A2 (fr) | 2013-07-10 |
| CN103582962B (zh) | 2017-03-22 |
| KR102404843B1 (ko) | 2022-06-07 |
| KR102321916B1 (ko) | 2021-11-05 |
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