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WO2012031096A3 - Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication - Google Patents

Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication Download PDF

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Publication number
WO2012031096A3
WO2012031096A3 PCT/US2011/050174 US2011050174W WO2012031096A3 WO 2012031096 A3 WO2012031096 A3 WO 2012031096A3 US 2011050174 W US2011050174 W US 2011050174W WO 2012031096 A3 WO2012031096 A3 WO 2012031096A3
Authority
WO
WIPO (PCT)
Prior art keywords
diodes
light emitting
electronic apparatus
power generating
microns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/050174
Other languages
English (en)
Other versions
WO2012031096A2 (fr
Inventor
Mark D. Lowenthal
William Johnstone Ray
Neil O. Shotton
Richard A. Blanchard
Brad Oraw
Mark Allan Lewandowski
Jeffrey Baldridge
Eric Anthony Perozziello
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NthDegree Technologies Worldwide Inc
Original Assignee
NthDegree Technologies Worldwide Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/223,302 external-priority patent/US8846457B2/en
Priority claimed from US13/223,294 external-priority patent/US8674593B2/en
Priority claimed from US13/223,293 external-priority patent/US8877101B2/en
Priority claimed from US13/223,279 external-priority patent/US8809126B2/en
Priority claimed from US13/223,286 external-priority patent/US8852467B2/en
Priority claimed from US13/223,297 external-priority patent/US8415879B2/en
Priority claimed from US13/223,289 external-priority patent/US9018833B2/en
Priority to CN201180052548.5A priority Critical patent/CN103582962B/zh
Priority to KR1020207025886A priority patent/KR102321916B1/ko
Priority to KR1020217035378A priority patent/KR102404843B1/ko
Priority to KR1020197028661A priority patent/KR102156532B1/ko
Application filed by NthDegree Technologies Worldwide Inc filed Critical NthDegree Technologies Worldwide Inc
Priority to EP11822653.9A priority patent/EP2612380A4/fr
Priority to KR1020137008391A priority patent/KR102030331B1/ko
Priority to PCT/US2011/050174 priority patent/WO2012031096A2/fr
Publication of WO2012031096A2 publication Critical patent/WO2012031096A2/fr
Anticipated expiration legal-status Critical
Publication of WO2012031096A3 publication Critical patent/WO2012031096A3/fr
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/857Interconnections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00Inks
    • C09D11/52Electrically conductive inks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/819Bodies characterised by their shape, e.g. curved or truncated substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/83Electrodes
    • H10H20/831Electrodes characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/20Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00
    • H10H29/24Assemblies of multiple devices comprising at least one light-emitting semiconductor device covered by group H10H20/00 comprising multiple light-emitting semiconductor devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80Constructional details
    • H10H29/85Packages
    • H10H29/855Optical field-shaping means, e.g. lenses
    • H10H29/8552Light absorbing arrangements, e.g. black matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/951Supplying the plurality of semiconductor or solid-state bodies
    • H01L2224/95101Supplying the plurality of semiconductor or solid-state bodies in a liquid medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • H01L2924/13033TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301Thyristor
    • H01L2924/13034Silicon Controlled Rectifier [SCR]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13062Junction field-effect transistor [JFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Led Device Packages (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne, à titre d'exemple, une composition imprimable d'une suspension liquide ou de gel de diodes comprenant une pluralité de diodes, un premier solvant et/ou un modificateur de viscosité. Un appareil illustratif comprend : une pluralité de diodes ; au moins une quantité à l'état de traces d'un premier solvant ; et un film polymère ou de résine entourant au moins partiellement chaque diode de la pluralité de diodes. Diverses diodes illustratives ont une dimension latérale comprise entre environ 10 et 50 microns et une hauteur comprise entre environ 5 à 25 microns. D'autres modes de réalisation peuvent également comprendre une pluralité de particules sensiblement chimiquement inertes ayant une plage de tailles comprise entre environ 10 et environ 50 microns.
PCT/US2011/050174 2010-09-01 2011-09-01 Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication Ceased WO2012031096A2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PCT/US2011/050174 WO2012031096A2 (fr) 2010-09-01 2011-09-01 Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication
KR1020137008391A KR102030331B1 (ko) 2010-09-01 2011-09-01 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법
EP11822653.9A EP2612380A4 (fr) 2010-09-01 2011-09-01 Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication
CN201180052548.5A CN103582962B (zh) 2010-09-01 2011-09-01 发光或动力生成装置
KR1020197028661A KR102156532B1 (ko) 2010-09-01 2011-09-01 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법
KR1020217035378A KR102404843B1 (ko) 2010-09-01 2011-09-01 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법
KR1020207025886A KR102321916B1 (ko) 2010-09-01 2011-09-01 발광, 발전 또는 기타 전자 장치 및 이의 제조 방법

Applications Claiming Priority (23)

Application Number Priority Date Filing Date Title
US37928410P 2010-09-01 2010-09-01
US37922510P 2010-09-01 2010-09-01
US61/379,225 2010-09-01
US61/379,284 2010-09-01
US37982010P 2010-09-03 2010-09-03
US37983010P 2010-09-03 2010-09-03
US61/379,820 2010-09-03
US61/379,830 2010-09-03
US13/223,279 2011-08-31
US13/223,294 2011-08-31
US13/223,302 US8846457B2 (en) 2007-05-31 2011-08-31 Printable composition of a liquid or gel suspension of diodes
US13/223,293 2011-08-31
US13/223,289 2011-08-31
US13/223,289 US9018833B2 (en) 2007-05-31 2011-08-31 Apparatus with light emitting or absorbing diodes
US13/223,297 US8415879B2 (en) 2007-05-31 2011-08-31 Diode for a printable composition
US13/223,286 US8852467B2 (en) 2007-05-31 2011-08-31 Method of manufacturing a printable composition of a liquid or gel suspension of diodes
US13/223,279 US8809126B2 (en) 2007-05-31 2011-08-31 Printable composition of a liquid or gel suspension of diodes
US13/223,297 2011-08-31
US13/223,293 US8877101B2 (en) 2007-05-31 2011-08-31 Method of manufacturing a light emitting, power generating or other electronic apparatus
US13/223,286 2011-08-31
US13/223,302 2011-08-31
US13/223,294 US8674593B2 (en) 2007-05-31 2011-08-31 Diode for a printable composition
PCT/US2011/050174 WO2012031096A2 (fr) 2010-09-01 2011-09-01 Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication

Publications (2)

Publication Number Publication Date
WO2012031096A2 WO2012031096A2 (fr) 2012-03-08
WO2012031096A3 true WO2012031096A3 (fr) 2014-03-20

Family

ID=48607508

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/050174 Ceased WO2012031096A2 (fr) 2010-09-01 2011-09-01 Appareil électroluminescent, générateur d'énergie ou autre appareil électronique et son procédé de fabrication

Country Status (4)

Country Link
EP (1) EP2612380A4 (fr)
KR (4) KR102321916B1 (fr)
CN (1) CN103582962B (fr)
WO (1) WO2012031096A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2954361B1 (fr) 2009-12-23 2012-06-15 Arjo Wiggins Fine Papers Ltd Feuille imprimable ultra lisse et recyclable et son procede de fabrication
BR112014017150A8 (pt) 2012-01-13 2017-07-04 Arjo Wiggins Fine Papers Ltd método para a produção de uma folha
DE102015215599A1 (de) 2015-08-14 2017-02-16 Audi Ag Energiespeicheranordnung, insbesondere für ein Kraftfahrzeug, Kraftfahrzeug und Verfahren zur Herstellung einer Energiespeicheranordnung
CN111261653B (zh) * 2018-11-30 2023-08-01 成都辰显光电有限公司 微型发光二极管、显示面板及其转移方法
KR102731021B1 (ko) * 2020-01-23 2024-11-15 삼성디스플레이 주식회사 광 분해성 증점제, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법
KR102791991B1 (ko) * 2019-03-18 2025-04-07 삼성디스플레이 주식회사 발광 소자 용매, 이를 포함하는 발광 소자 잉크 및 표시 장치의 제조 방법
KR102844621B1 (ko) * 2020-04-22 2025-08-11 삼성디스플레이 주식회사 발광 소자 잉크 및 표시 장치의 제조 방법
CN111739789B (zh) * 2020-06-30 2024-05-03 安徽安美半导体有限公司 一种二极管的返工清洗工艺
KR102869879B1 (ko) * 2021-02-03 2025-10-10 삼성전자주식회사 마이크로 led 현탁액 토출 장치 및 마이크로 led 전사 방법
US12328931B2 (en) 2022-03-04 2025-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Hybrid integrated circuit dies and methods of forming the same

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US6871982B2 (en) * 2003-01-24 2005-03-29 Digital Optics International Corporation High-density illumination system
US20050146870A1 (en) * 2004-01-06 2005-07-07 Jeng-Shyong Wu Elongated flexible lighting equipment and fabricating method of same
US6936193B2 (en) * 2003-04-14 2005-08-30 Research Frontiers Incorporated Suspended particle device light valve film
US20070131925A1 (en) * 2004-03-16 2007-06-14 Paul Shalk Organic light-emitting diode
US20080121899A1 (en) * 2006-11-07 2008-05-29 World Properties, Inc. Transparent electrode for LED array
US20080274574A1 (en) * 2007-03-20 2008-11-06 Luminus Devices, Inc. Laser liftoff structure and related methods
US20090159907A1 (en) * 2004-09-28 2009-06-25 Wang Nang Wang Textured light emitting diodes
US7722953B2 (en) * 2001-07-02 2010-05-25 Brian A. Korgel Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same
US20100167441A1 (en) * 2007-05-31 2010-07-01 Nthdegree Technologies Worldwide Inc. Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System
US20100187482A1 (en) * 2007-04-20 2010-07-29 Max-Planck-Gesellschaft Zur Förderung Der Wissensc Highly Conductive, Transparent Carbon Films as Electrode Materials

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5545291A (en) * 1993-12-17 1996-08-13 The Regents Of The University Of California Method for fabricating self-assembling microstructures
US5824186A (en) * 1993-12-17 1998-10-20 The Regents Of The University Of California Method and apparatus for fabricating self-assembling microstructures
US5469020A (en) * 1994-03-14 1995-11-21 Massachusetts Institute Of Technology Flexible large screen display having multiple light emitting elements sandwiched between crossed electrodes
JPH0955538A (ja) * 1995-08-10 1997-02-25 Furukawa Electric Co Ltd:The 多波長発光素子
WO2000045443A1 (fr) * 1999-01-28 2000-08-03 Nova Crystals, Inc. Diodes electroluminescentes a performances elevees
US7858994B2 (en) * 2006-06-16 2010-12-28 Articulated Technologies, Llc Solid state light sheet and bare die semiconductor circuits with series connected bare die circuit elements
US7476557B2 (en) 2004-03-29 2009-01-13 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
US7554257B2 (en) * 2005-03-02 2009-06-30 Osram Opto Semiconductors Gmbh Method to generate high efficient devices which emit high quality light for illumination
JP4992282B2 (ja) * 2005-06-10 2012-08-08 ソニー株式会社 発光ダイオード、発光ダイオードの製造方法、発光ダイオードバックライト、発光ダイオード照明装置、発光ダイオードディスプレイおよび電子機器
FR2892594B1 (fr) * 2005-10-21 2007-12-07 Saint Gobain Structure lumineuse comportant au moins une diode electroluminescente, sa fabrication et ses applications
JP4899675B2 (ja) * 2006-07-12 2012-03-21 ソニー株式会社 実装方法、電子機器の製造方法および発光ダイオードディスプレイの製造方法
JP2008141026A (ja) * 2006-12-04 2008-06-19 Sony Corp 電子機器及びその製造方法、並びに、発光ダイオード表示装置及びその製造方法
US8889216B2 (en) 2007-05-31 2014-11-18 Nthdegree Technologies Worldwide Inc Method of manufacturing addressable and static electronic displays
US7874474B2 (en) * 2008-01-22 2011-01-25 University Of Washington Self-assembly of elements using microfluidic traps
JP2013074070A (ja) * 2011-09-27 2013-04-22 Fujitsu Ltd 半導体装置及び半導体装置の製造方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6611002B2 (en) * 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US7722953B2 (en) * 2001-07-02 2010-05-25 Brian A. Korgel Light-emitting nanoparticles comprising octanol as a passivating agent, and method of making same
US6871982B2 (en) * 2003-01-24 2005-03-29 Digital Optics International Corporation High-density illumination system
US6936193B2 (en) * 2003-04-14 2005-08-30 Research Frontiers Incorporated Suspended particle device light valve film
US20050146870A1 (en) * 2004-01-06 2005-07-07 Jeng-Shyong Wu Elongated flexible lighting equipment and fabricating method of same
US20070131925A1 (en) * 2004-03-16 2007-06-14 Paul Shalk Organic light-emitting diode
US20090159907A1 (en) * 2004-09-28 2009-06-25 Wang Nang Wang Textured light emitting diodes
US20080121899A1 (en) * 2006-11-07 2008-05-29 World Properties, Inc. Transparent electrode for LED array
US20080274574A1 (en) * 2007-03-20 2008-11-06 Luminus Devices, Inc. Laser liftoff structure and related methods
US20100187482A1 (en) * 2007-04-20 2010-07-29 Max-Planck-Gesellschaft Zur Förderung Der Wissensc Highly Conductive, Transparent Carbon Films as Electrode Materials
US20100167441A1 (en) * 2007-05-31 2010-07-01 Nthdegree Technologies Worldwide Inc. Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

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KR20210136146A (ko) 2021-11-16
KR20190116535A (ko) 2019-10-14
KR20130108575A (ko) 2013-10-04
KR102030331B1 (ko) 2019-10-10
EP2612380A4 (fr) 2015-01-14
KR102156532B1 (ko) 2020-09-16
CN103582962A (zh) 2014-02-12
WO2012031096A2 (fr) 2012-03-08
EP2612380A2 (fr) 2013-07-10
CN103582962B (zh) 2017-03-22
KR102404843B1 (ko) 2022-06-07
KR102321916B1 (ko) 2021-11-05

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