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WO2012018237A2 - Photopile tandem utilisant une photopile en silicium amorphe et une photopile organique - Google Patents

Photopile tandem utilisant une photopile en silicium amorphe et une photopile organique Download PDF

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Publication number
WO2012018237A2
WO2012018237A2 PCT/KR2011/005742 KR2011005742W WO2012018237A2 WO 2012018237 A2 WO2012018237 A2 WO 2012018237A2 KR 2011005742 W KR2011005742 W KR 2011005742W WO 2012018237 A2 WO2012018237 A2 WO 2012018237A2
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WIPO (PCT)
Prior art keywords
oxide
solar cell
layer
amorphous silicon
organic
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Ceased
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PCT/KR2011/005742
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WO2012018237A3 (fr
Inventor
Kyungkon Kim
Seung Hee Han
Hong Gon Kim
Min Jae Ko
Doh Kwon Lee
Tae Hee Kim
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Korea Institute of Science and Technology KIST
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Korea Institute of Science and Technology KIST
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Priority to CN2011800386073A priority Critical patent/CN103140935A/zh
Priority to US13/810,553 priority patent/US20130118567A1/en
Publication of WO2012018237A2 publication Critical patent/WO2012018237A2/fr
Publication of WO2012018237A3 publication Critical patent/WO2012018237A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a tandem solar cell using two kinds of solar cells having different band gaps, namely, an amorphous silicon solar cell and an organic solar cell, which can absorb a wider wavelength range of light and exhibit improved open-circuit voltage performance.
  • silicon solar cells are classified into a substrate type and a thin-film type, depending on the form of material.
  • the substrate type silicon solar cell is further divided into, depending on the material of the light absorbing layer, a single-crystalline silicon solar cell and a poly-crystalline silicon solar cell.
  • the thin-film type silicon solar cell is also divided into an amorphous silicon (a-Si:H) solar cell and a micro-crystalline silicon (c-Si:H) solar cell, depending on the material of the light absorbing layer.
  • the crystalline silicon substrate includes a silicon wafer and thus increases the production cost and undergoes complicated processing, undesirably resulting in decreased productivity.
  • the amorphous silicon solar cell has low material cost and is adapted for continuous mass production processes, thus making it possible to achieve the actual commercialization thereof .
  • thorough research thereinto is ongoing in many enterprises, labs and universities.
  • the structure of the silicon solar cell is typically provided in the form of a diode having a p-n junction.
  • the amorphous silicon thin film has a carrier diffusion length much lower than that of the crystalline silicon substrate, it has undesirably low collection efficiency of electron-hole pairs formed by light when manufactured in the form of a p-n structure.
  • the amorphous silicon solar cell is manufactured in the form of a p-i-n structure in which a non-doped intrinsic (i-type) amorphous silicon light absorbing layer is interposed between the p-type amorphous silicon layer and the n-type amorphous silicon layer.
  • the typical structure of the amorphous silicon solar cell is shown in FIG. 1. As shown in FIG.
  • the amorphous silicon solar cell includes a transparent electrode layer 20, a p-type amorphous silicon layer 30, an i-type amorphous silicon layer 40, an n-type amorphous silicon layer, and a metal electrode layer 60, which are sequentially formed on a glass substrate 10.
  • the organic solar cell uses an organic material as a light absorbing layer, and thus has a much lower cost of materials compared to an inorganic material such as silicon, and has a very simple fabrication process thereby remarkably reducing the production cost.
  • the organic solar cell is formed of organic materials having electron donor and acceptor properties.
  • the operating principle of this cell is that when light energy is incident on a photoactive layer made of an organic material, electrons become excited, and the excited electrons and the holes left behind after release of the electrons are electrostatically weakly bound to each other to thus form excitons which are electron-hole pairs. In order for the excitons produced by solar light to actually generate photocurrent , the electron-hole pairs are dissociated into electrons and holes, respectively.
  • the polymer system used as a representative example of the organic solar cell is composed mainly of a mixture solution comprising a conjugated polymer such as poly (3- hexylthiophene) (P3HT) and [6 , 6] -phenyl-C x -butyric acid methyl ester (PC X BM) as a main material.
  • P3HT poly (3- hexylthiophene)
  • PC X BM poly hexylthiophene
  • FIG. 2 the organic solar cell is typically configured such that a transparent electrode layer 20, a hole transporting layer 70, a light absorbing layer 80 and a metal electrode layer 60 are sequentially formed on a glass substrate 10.
  • tandem solar cells were reported to be manufactured by stacking two or more kinds of single solar cells and electrically connecting them in series .
  • the tandem solar cell is manufactured from two or more kinds of solar cells having different band gaps, solar light of a wide wavelength range can be utilized, and also two or more kinds of solar cells are connected in series and thus open- circuit voltage ( ⁇ 00 ) can increase, advantageously resulting in high efficiency.
  • the V oc of the tandem solar cell corresponds to the sum of values of respective single solar cells, and short-circuit current density (J sc ) of the tandem solar cell is determined by the smaller value among J sc values of respective single solar cells.
  • a single solar cell having smaller J sc is defined as a limiting cell.
  • the amorphous silicon solar cell has a band gap of about 1.7 ⁇ 1.9 eV, which is comparatively higher than that of the crystalline silicon solar cell and is thus disadvantageous because it cannot absorb solar light of long wavelengths.
  • a tandem solar cell comprising the amorphous silicon solar cell and the micro- crystalline silicon solar cell which are stacked so that solar light of a wide wavelength range is absorbed and the cell efficiency is increased.
  • the micro- crystalline silicon has a coefficient of light absorption smaller than that of the amorphous silicon, and thus should be formed thick in order to sufficiently absorb light, and also a crystallization process using heat treatment should be added. For this reason, the tandem solar cell having the above structure is problematic in terms of decreased productivity and increased production cost.
  • an object of the present invention to provide a tandem solar cell, which can absorb a wider wavelength range of light, exhibit improved open-circuit voltage (V oc ) performance, and be mass produced in a simple manner at low cost .
  • a tandem solar cell comprising an amorphous silicon solar cell including a photoactive layer made of amorphous silicon; and an organic solar cell including a photoactive layer made of an organic material, which are stacked and electrically connected in series.
  • FIG. 1 schematically illustrates a typical structure of an amorphous silicon solar cell
  • FIG. 2 schematically depicts a typical structure of an organic solar cell
  • FIG. 3 schematically shows a structure of a tandem solar cell comprising an amorphous silicon solar cell and an organic solar cell which are stacked, according to a preferred embodiment of the present invention
  • FIG. 4 describes current-voltage graphs of the solar cells of Examples 1 and 2 and Comparative Examples 1 and 2, measured under conditions of AM 1.5 light irradiation (in Comparative Example 2, the current-voltage properties were measured by applying light passed through an amorphous silicon sample under AM 1.5 light irradiation conditions);
  • FIGs . 5A and 5B illustrate measurement results of incident photon-current conversion efficiency (IPCE) for the solar cells of Example 2 and Comparative Examples 1 and 2.
  • IPCE incident photon-current conversion efficiency
  • a tandem solar cell comprises an amorphous silicon solar cell having an amorphous silicon photoactive layer and an organic solar cell having an organic photoactive layer which are stacked and electrically connected in series.
  • the amorphous silicon solar cell absorbs a short wavelength region of light and the organic solar cell absorbs a long wavelength region of light, and thus the tandem solar cell according to the present invention can absorb light over a wider range of wavelengths .
  • the tandem solar cell has the structure that comprises a glass substrate, a transparent electrode layer, a p-type amorphous silicon layer, an i-type amorphous silicon layer, an n-type amorphous silicon layer, a hole transporting layer, an organic photoactive layer, and a metal electrode layer which are sequentially stacked.
  • the tandem solar cell according to the present invention may further include an electron transporting layer placed between the organic photoactive layer and the metal electrode layer, and a metal recombination layer placed between the n-type amorphous silicon layer and the hole transporting layer.
  • the tandem solar cell is configured such that the glass substrate 10, the transparent electrode layer 20, the p-type amorphous silicon layer 30, the i-type amorphous silicon layer 40, the n-type amorphous silicon layer 50, the hole transporting layer 70, the organic photoactive layer 80, the electron transporting layer 90 and the metal electrode layer 60 are sequentially stacked.
  • the layers of the solar cell may be formed at predetermined thicknesses using typical materials by means of typical methods .
  • the hole transporting layer or the electron transporting layer may be made of one or more materials selected from the group consisting of titanium (Ti) oxide, zirconium (Zr) oxide, strontium (Sr) oxide, zinc (Zn) oxide, indium (In) oxide, lanthanum (La) oxide, vanadium (V) oxide, molybdenum (Mo) oxide, tungsten (W) oxide, tin (Sn) oxide, niobium (Nb) oxide, magnesium (Mg) oxide, aluminum (Al) oxide, yttrium (Y) oxide, scandium (Sc) oxide, samarium (Sm) oxide, gallium (Ga) oxide, strontium- titanium (Sr-Ti) oxide, lithium fluoride (LiF) , poly(3,4- ethylenedioxythiophene) : poly (styrenesulfonate) (PEDOTrPSS) , polyaniline, and polypyrrole.
  • Ti titanium
  • Zr
  • the metal recombination layer may be made of one or more materials selected from the group consisting of gold (Au) , silver (Ag) , nickel (Ni) , aluminum (Al) , titanium (Ti) , platinum (Pt) , palladium (Pd) and copper (Cu) .
  • the glass substrate is first prepared.
  • An indium-tin oxide (ITO) layer which is the transparent electrode layer may be formed on the glass substrate using sputtering.
  • ITO indium-tin oxide
  • TCO transparent conductive oxide
  • FTO fluorine-doped tin oxide
  • the glass substrate and the transparent electrode layer preferably should be as transparent as possible.
  • the p-type amorphous silicon layer may be formed on the ITO electrode layer using plasma-enhanced chemical vapor deposition (PECVD) .
  • PECVD plasma-enhanced chemical vapor deposition
  • the i-type amorphous silicon layer may be formed on the p-type amorphous silicon layer using PECVD, and subsequently the n-type amorphous silicon layer, on the i-type amorphous silicon layer using PECVD.
  • the amorphous silicon may be hydrogenated amorphous silicon as represented by a-Si:H.
  • the i-type (intrinsic) amorphous silicon indicates a state free of added impurities, and the p-type (positive) and n-type (negative) indicate a doped state in which an impurity has been added to amorphous silicon.
  • a trivalent element such as boron and potassium may be added, and in order to form the n-type amorphous silicon, a pentavalent element such as phosphorus, arsenic and antimony may be added.
  • the hole transporting layer may be formed on the n-type amorphous silicon layer using thermal evaporation or spin coating.
  • the organic photoactive layer may be formed on the hole transporting layer using spin coating, and then the electron transporting layer, on the organic photoactive layer using spin coating.
  • the metal electrode may be formed on the electron transporting layer using thermal evaporation, thereby completing the tandem solar cell.
  • the inventive tandem solar cell comprises the organic solar cell which can be simply manufactured at low material cost and absorb light of long wavelengths in a stacked form together with the amorphous silicon solar cell, thereby be able to absorb a wider wavelength range of light and to exhibit improved V oc performance.
  • the tandem solar cell according to the present invention can be mass produced at low cost due to its convenient manufacture .
  • a glass substrate having a transparent electrode layer composed of ITO formed at a thickness of 200 nm thereon was prepared.
  • the glass substrate having the ITO layer was cleaned by washing it with ultra-sonication using isopropylalcohol (IPA) for 10 min, acetone for 10 min, and then IPA for 10 min, drying it at 80 ° C in a vacuum for 10 min, and then ozone treating it for 20 min.
  • IPA isopropylalcohol
  • a p-type amorphous silicon layer having a thickness of 5 nm, an i-type amorphous silicon layer having a thickness of 120 nm and an n-type amorphous silicon layer having a thickness of 25 nm were sequentially formed on the ITO transparent electrode layer using PECVD.
  • a mixture solution comprising aqueous PEDOT:PSS (CLEVIOS, AI4083) and methanol at a volume ratio of 1:1 was subjected to spin coating at 4000 rpm for 40 sec on the n-type amorphous silicon layer, thus forming a 30 nm- thick hole transporting layer.
  • this layer was dried at 110 ° C for 10 min, after which a 1:4 weight ratio solution of poly [2,6- (4 , 4-bis- (2-ethylhexyl) -4H-cyclopenta [2 , 1-b; 3,4- b' ] -dithiophene) -alt-4, 7- (2, 1, 3-benzothiadiazole) ] (PCPDTBT) and [6 , 6] -phenyl-C 7 i-butyric acid methyl ester (PC 71 BM, Nano- C) dissolved in chlorobenzene (Aldrich) was subjected to spin coating at 2000 rpm, thus forming an organic photoactive layer at a thickness of about 70 nm.
  • PCPDTBT poly [2,6- (4 , 4-bis- (2-ethylhexyl) -4H-cyclopenta [2 , 1-b; 3,4- b' ] -dithiophene) -alt-4, 7-
  • Ti0 2 titanium oxide
  • Aldrich 1-butanol
  • Aldrich a solution of 0.5 wt% titanium oxide (Ti0 2 ) nanoparticles dispersed in 1-butanol (Aldrich) was subjected to spin coating at 800 rpm on the organic photoactive layer, thus forming an electron transporting layer at a thickness of about 20 nm.
  • Al was selectively deposited using a stainless steel shadow mask, and the active area of the solar cell was defined by the overlapping area of the ITO electrode and the Al electrode stacked together.
  • Example 2 Tandem Solar Cell using Mo0 3 as Hole Transporting Layer
  • a tandem solar cell was manufactured in the same manner as in Example 1, with the exception that Mo0 3 was used instead of PEDOT:PSS as the material of the hole transporting layer formed on the n-type amorphous silicon layer.
  • the Mo0 3 hole transporting layer was formed at a thickness of about 3.5 nm using thermal evaporation.
  • a conventional amorphous silicon solar cell having a single photoactive layer structure was manufactured.
  • a p-type amorphous silicon layer, an i-type amorphous silicon layer and an n-type amorphous silicon layer were sequentially created on the ITO transparent electrode layer using PECVD.
  • an Al metal electrode layer was formed at a thickness of 100 nm on the n-type amorphous silicon layer using thermal evaporation, thereby manufacturing the single amorphous silicon solar cell.
  • Comparative Example 2 Single Organic Solar Cell
  • a conventional organic solar cell having a single photoactive layer structure was manufactured.
  • a Mo0 3 hole transporting layer was formed at a thickness of 3.5 nm on the ITO transparent electrode layer using thermal evaporation, and then as in Example 1, a mixture solution comprising PCPDTBT and PC 71 B at a weight ratio of 1:4 was subjected to spin coating at a thickness of 70 nm, thus forming an organic photoactive layer.
  • the properties of the solar cells of Examples 1 and 2 and Comparative Examples 1 and 2 were measured. The results are shown in FIG. 4 and Table 1 below.
  • the conversion efficiency was measured using a 1.5AM 100 mW/cirf solar simulator (Xe lamp [2500W] , AMI .5 filter, and Keithley model2400) .
  • the current density is the Y axis of the conversion efficiency curve
  • the voltage is the X axis of the conversion efficiency curve
  • J sc and VQ C are the intercept values of respective axes .
  • the V oc of the tandem solar cells of Examples 1 and 2 approximates the sum of V oc values of respective single solar cells of Comparative Examples 1 and 2. This means that respective single solar cells are electrically connected in series to successfully embody the tandem solar cell.
  • the tandem solar cell of Example 2 has the V oc and FF higher than those of the tandem solar cell of Example 1. This is considered to be because the use of PEDOT:PSS as the hole transporting layer obstructs effective charge transport and recombination on the interface between the n-type amorphous silicon layer and the hole transporting layer, due to hydrophobicity of the amorphous silicon layer and hydrophilic conductivity of the hole transporting layer, which causes increase of an internal resistance.
  • the hole transporting layer of a metal oxide including Mo0 3 when used, the FF of the tandem solar cell which is almost the same as that of the limiting cell can be obtained Further, the formation of the metal oxide hole transporting layer including the M0O 3 layer which is neutral is free of risk of etching the amorphous silicon layer previously formed, unlike the PEDOT.-PSS hole transporting layer which is strongly acidic (pH 1) .
  • FIGs. 5A and 5B The results of measurement of IPCE of the solar cells of Example 2 and Comparative Examples 1 and 2 are shown in FIGs. 5A and 5B (FIG. 5A shows the IPCE of the single solar cells of Comparative Examples 1 and 2, and FIG. 5B shows the results obtained by radiating bias light onto the tandem solar cell of Example 2) .
  • FIG. 5A shows the IPCE of the single solar cells of Comparative Examples 1 and 2
  • FIG. 5B shows the results obtained by radiating bias light onto the tandem solar cell of Example 2 .
  • bias light having a wavelength above 750 nm which corresponds to the wavelength range absorbed by the organic solar cell is applied
  • charges can be continuously generated and transferred by the organic solar cell, and current generated by the amorphous silicon solar cell is measured in the actual IPCE results.
  • bias light having a wavelength below 750 nm is applied, current generated by the organic solar cell is measured.
  • the amorphous silicon solar cell can absorb light ranging from 300 nm to 650 nm so that such light is converted into photocurrent . Because the light transmittance of the amorphous silicon solar cell increases from 500 nm, light that has passed through the amorphous silicon solar cell is absorbed by the organic solar cell in the wavelength range from 500 nm to 900 nm and is thus converted into photocurrent . In the case where the tandem solar cell is manufactured using these two kinds of solar cells, light over a wider range of wavelengths can be absorbed and thus converted into photocurrent .

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une photopile tandem comprenant une photopile en silicium amorphe comprenant une couche photoactive composée de silicium amorphe, et une photopile organique comprenant une couche photoactive composée d'un matériau organique, empilées et reliées électriquement en série et pouvant absorber une plage de longueur d'onde de lumière plus large, présenter une performance de tension en circuit ouvert (Voc) améliorée, et être produite en masse d'une manière simple à bas coûts.
PCT/KR2011/005742 2010-08-06 2011-08-05 Photopile tandem utilisant une photopile en silicium amorphe et une photopile organique Ceased WO2012018237A2 (fr)

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CN2011800386073A CN103140935A (zh) 2010-08-06 2011-08-05 使用非晶硅太阳能电池和有机太阳能电池的串联太阳能电池
US13/810,553 US20130118567A1 (en) 2010-08-06 2011-08-05 Tandem solar cell using amorphous silicon solar cell and organic solar cell

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KR10-2010-0075911 2010-08-06
KR1020100075911A KR101117127B1 (ko) 2010-08-06 2010-08-06 비정질 실리콘 태양전지와 유기 태양전지를 이용한 탠덤형 태양전지

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WO2012018237A2 true WO2012018237A2 (fr) 2012-02-09
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CN120614940A (zh) * 2024-03-08 2025-09-09 宁德时代新能源科技股份有限公司 叠层太阳电池、光伏组件、光伏系统、用电装置和发电装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
SG194237A1 (en) * 2001-12-05 2013-11-29 Semiconductor Energy Lab Organic semiconductor element
EP1650812B2 (fr) * 2003-07-24 2019-10-23 Kaneka Corporation Méthode de fabrication d'une cellule photovoltaïque à base de silicium en couches minces
WO2005092901A1 (fr) * 2004-03-29 2005-10-06 Mitsui Chemicals, Inc. Nouveau composé et dispositif électronique organique utilisant ce composé
KR101030008B1 (ko) * 2004-12-31 2011-04-20 삼성모바일디스플레이주식회사 유기 전계 발광 소자
KR20070035341A (ko) * 2005-09-27 2007-03-30 삼성전자주식회사 간극을 채운 반도체 나노결정층을 함유하는 발광소자 및 그제조방법
KR20070101917A (ko) * 2006-04-12 2007-10-18 엘지전자 주식회사 박막형 태양전지와 그의 제조방법
US20080135083A1 (en) * 2006-12-08 2008-06-12 Higher Way Electronic Co., Ltd. Cascade solar cell with amorphous silicon-based solar cell
CN101802948B (zh) 2007-07-23 2014-01-15 巴斯夫欧洲公司 串列光伏电池
US8529795B2 (en) * 2007-08-22 2013-09-10 Gwangju Institute Of Science And Technology Wet-processible metal oxide solution, method of using the same, and organic photovoltaic cell of using the same
JP5645666B2 (ja) * 2007-10-31 2014-12-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ ハロゲン化フタロシアニン類の使用
EP2075850A3 (fr) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Dispositif de conversion photoélectrique et son procédé de fabrication
KR20090123739A (ko) * 2008-05-28 2009-12-02 광주과학기술원 유무기 태양전지 및 이의 제조 방법
US20090308456A1 (en) * 2008-06-13 2009-12-17 Interuniversitair Microelektronica Centrum (Imec) Photovoltaic Structures and Method to Produce the Same
WO2010036963A1 (fr) * 2008-09-26 2010-04-01 The Regents Of The University Of Michigan Cellules solaires organiques en tandem
US20100319765A1 (en) * 2009-06-17 2010-12-23 Korea University Research And Business Foundation Photovoltaic devices
KR101018319B1 (ko) * 2009-08-24 2011-03-04 성균관대학교산학협력단 유무기 복합 적층형 태양전지의 제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10205042B2 (en) * 2012-01-26 2019-02-12 Fundació Institut De Ciències Fotòniques Photoconversion device with enhanced photon absorption
DE102012022745A1 (de) 2012-11-21 2014-05-22 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Tandem-Dünnschicht-Solarzelle
EP2736075A2 (fr) 2012-11-21 2014-05-28 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Cellule solaire à couche mince en tandem
EP2736075A3 (fr) * 2012-11-21 2014-09-17 Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Cellule solaire à couche mince en tandem
CN103178211A (zh) * 2013-03-28 2013-06-26 武汉大学 MoO3/MoS2复合薄膜作为阳极界面层的有机太阳能电池及其制备方法
CN103811187A (zh) * 2014-03-05 2014-05-21 南昌航空大学 一种稀土共掺杂晶态发光材料的制备及其在杂化太阳电池中的应用

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KR20120013731A (ko) 2012-02-15

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