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WO2012017751A1 - Elément électroluminescent organique, dispositif électroluminescent organique et procédé de conversion de couleur - Google Patents

Elément électroluminescent organique, dispositif électroluminescent organique et procédé de conversion de couleur Download PDF

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Publication number
WO2012017751A1
WO2012017751A1 PCT/JP2011/064392 JP2011064392W WO2012017751A1 WO 2012017751 A1 WO2012017751 A1 WO 2012017751A1 JP 2011064392 W JP2011064392 W JP 2011064392W WO 2012017751 A1 WO2012017751 A1 WO 2012017751A1
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Prior art keywords
light
organic
light emitting
layer
conversion layer
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Japanese (ja)
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大江　昌人
近藤　克己
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • the present invention relates to an organic light emitting device, an organic light emitting device, and a color conversion method.
  • an electroluminescence (EL) element is self-luminous and has high visibility and is a completely solid element. Therefore, the EL element has excellent impact resistance and is easy to handle. Therefore, the EL element is attracting attention as a light emitting element in various display devices.
  • the EL element includes an inorganic EL element using an inorganic compound as a light emitting material and an organic EL element using an organic compound as a light emitting material. Among these, organic EL elements have been actively researched for practical use since the applied voltage can be significantly reduced.
  • the conventional method requires a mask having a size equal to or larger than the substrate size, it is necessary to manufacture and process a mask corresponding to a large substrate. Since this mask requires a very thin metal (general film thickness: 50 nm to 100 nm), it is difficult to increase the size of the mask.
  • the mask is bent at the central portion, which causes color mixture of the light emitting layer as described above.
  • a portion where the organic layer is not formed is formed, which may lead to defects due to leakage of the upper and lower electrodes.
  • an increase in the size of the mask leads to an increase in display cost.
  • the cost problem is regarded as the biggest problem in the organic EL display.
  • a light conversion method is disclosed in which a fluorescent material that absorbs light in the light emitting region of the organic light emitting layer and emits fluorescence in the visible light region is used as a filter without coating the organic light emitting layer for each color (for example, Patent Documents). 1 and 2).
  • An example of this light conversion type organic light emitting device is shown in FIG.
  • An organic light emitting device 200 illustrated in FIG. 12 includes an organic EL 210, a green pixel, a red pixel, and a blue pixel between a substrate 230 and a transparent substrate 240.
  • the organic EL 210 sandwiches a light emitting layer 211 that emits blue to blue green light with a pair of electrodes 212 and 213.
  • the green pixel has a fluorescence conversion layer 220G that absorbs blue to blue-green light emitted from the organic EL 210 and emits green light.
  • the red pixel has a fluorescence conversion layer 220R that absorbs blue to blue-green light emitted from the organic EL 210 and emits red light.
  • the blue pixel may be provided with a blue color filter (not shown) for the purpose of improving color purity as necessary.
  • Such a light conversion method is superior to the above-described separate coating method in that it is not necessary to pattern the organic light emitting layer and can be easily manufactured, and in terms of cost. For this reason, display devices that perform full color conversion using a light conversion method are promising and research and development are underway.
  • an organic EL 210 that emits light in a blue region is used as a light source.
  • a material that emits light in a blue region in particular, a blue phosphorescent material, is inferior in terms of light emission efficiency (luminance) and life compared to a red light emitting material and a green light emitting material, and is under development. Therefore, in the conventional structure in which blue light is emitted from the organic EL and the light is color-converted by the fluorescence conversion layer, it is not possible to obtain an organic light-emitting element with high emission efficiency and long life.
  • One embodiment of the present invention provides a high-efficiency (high luminance) organic light-emitting element, an organic light-emitting device, and a color conversion method.
  • the present inventors arrange an organic light emitting element suitable for the purpose by arranging a layer having a function of converting the wavelength of light emitted from the organic EL light emitting part between the organic EL light emitting part and the fluorescence conversion layer. I found that I could do it.
  • An organic light emitting device includes an organic EL light emitting unit including at least one organic layer including a light emitting layer and a pair of electrodes sandwiching the organic layer, and extracts light from the organic EL light emitting unit.
  • a fluorescence conversion layer that is disposed on the surface side and converts fluorescence of incident light, and is disposed between the organic EL light emitting unit and the fluorescence conversion layer, and converts the wavelength of light emitted from the organic EL light emitting unit.
  • a wavelength conversion layer that emits light toward the fluorescence conversion layer.
  • the electrode is a reflective electrode, and the optical film thickness between the reflective interfaces defined by the pair of reflective electrodes is light emitted from the organic EL light emitting unit. May be set so as to enhance the intensity of light of a specific wavelength.
  • the wavelength conversion layer may convert the wavelength of light emitted from the organic EL light-emitting unit into one half.
  • the wavelength conversion layer may be configured by stacking a plurality of layers in which polarization directions are alternately reversed.
  • the wavelength conversion layer may be configured by alternately stacking semiconductor layers and dielectric layers.
  • each of the plurality of layers constituting the wavelength conversion layer may be made of a unipolarized dielectric material.
  • the dielectric material may be made of a material selected from the group consisting of a ferroelectric material, a glass material, and a polymer material.
  • the organic EL light emitting unit may emit light in a red region.
  • the organic EL light emitting unit may emit light in a green region.
  • the organic light emitting device further includes a light reflective layer on a light extraction surface side of the light converted by the wavelength conversion layer, and a surface from which the light from the light reflective layer and the organic EL light emitting unit is extracted.
  • the optical film thickness of the reflective interface defined by the reflective electrode on the side may be set so as to enhance the intensity of light of a specific wavelength among the light converted in wavelength in the wavelength conversion layer.
  • the wavelength conversion layer converts light emitted from the organic EL light-emitting portion into light in an ultraviolet region to a blue region
  • the fluorescence conversion layer converts the light in the wavelength conversion layer.
  • the emitted light may be converted into light in the green region or light in the red region.
  • the fluorescence conversion layer can perform at least two types of color conversion, one of which is color conversion that converts light converted by the wavelength conversion layer into light in a green region. And the other one is color conversion for converting light converted by the wavelength conversion layer into light in the red region, and the organic light emitting element may be a multicolor light emitting element.
  • a color filter may be further provided on the side of emitting the light converted by the fluorescence conversion layer.
  • the organic light emitting device may be configured to be provided with a drive unit that drives the organic EL light emitting unit of the organic light emitting device in the organic light emitting device.
  • the color conversion method according to one aspect of the present invention emits light from an organic EL light emitting unit including at least one organic layer including a light emitting layer, and a pair of electrodes sandwiching the organic layer, By converting the wavelength of the light emitted from the organic EL light emitting unit by the wavelength conversion layer disposed between the fluorescence conversion layer that converts the incident light to fluorescence, and emitting the converted light to the fluorescence conversion layer side, The light converted by the wavelength conversion layer is converted to fluorescence by the fluorescence conversion layer to generate visible light.
  • the wavelength conversion layer may convert the wavelength of light emitted from the organic EL light emitting unit into one half.
  • the wavelength conversion layer may be a stacked body including a plurality of layers in which polarization directions are alternately reversed.
  • the wavelength conversion layer may be a stacked body in which semiconductor layers and dielectric layers are alternately stacked.
  • a high-efficiency (high luminance) organic light-emitting element an organic light-emitting device, and a color conversion method can be provided.
  • FIG. 1 is a schematic cross-sectional view illustrating an example of the organic light-emitting device according to the first embodiment of the present invention
  • FIG. 2 is a top view of the organic light-emitting device shown in FIG.
  • An organic light emitting device 20 shown in FIG. 1 includes a substrate 1, an organic EL light emitting unit (light source) 10, a sealing substrate 9, a fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, a blue fluorescence conversion layer 8B, and a wavelength conversion.
  • Layer 18 is a schematic cross-sectional view illustrating an example of the organic light-emitting device according to the first embodiment of the present invention
  • FIG. 2 is a top view of the organic light-emitting device shown in FIG.
  • An organic light emitting device 20 shown in FIG. 1 includes a substrate 1, an organic EL light emitting unit (light source) 10, a sealing substrate 9, a fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, a blue fluorescence
  • the substrate 1 has a TFT (Thin Film Transistor) circuit 2.
  • the organic EL light emitting unit (light source) 10 is provided on the substrate 1 via the interlayer insulating film 3 and the planarizing film 4.
  • the fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B are partitioned by the black matrix 7 and arranged in parallel on one surface of the sealing substrate 9.
  • the wavelength conversion layer 18 is disposed between the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the substrate 1 and the sealing substrate 9 are arranged such that the organic EL light emitting unit 10 and the fluorescence conversion layers 8R, 8G, and 8B face each other with the sealing material 6 and the wavelength conversion layer 18 interposed therebetween.
  • the organic EL light emitting unit 10 and the wavelength conversion layer 18 are covered with the inorganic sealing film 5.
  • an organic EL layer (organic layer) 17 is sandwiched between the first electrode 12 and the second electrode 16.
  • a reflective electrode 11 is formed on the lower surface of the first electrode 12.
  • the organic EL layer (organic layer) 17 is a stack of a hole transport layer 13, a light emitting layer 14, and an electron transport layer 15.
  • the reflective electrode 11 and the first electrode 12 are connected to one of the TFT circuits 2 by a wiring 2 b provided through the interlayer insulating film 3 and the planarizing film 4.
  • the second electrode 16 is connected to one of the TFT circuits 2 by a wiring 2 a provided through the interlayer insulating film 3, the planarizing film 4 and the edge cover 19.
  • the wavelength conversion layer 18 converts the wavelength of the light emitted from the organic EL light emitting unit 10 and emits it to the fluorescence conversion layers 8R, 8G, and 8B side.
  • the light emitted from the wavelength conversion layer 18 and incident on the fluorescence conversion layers 8R, 8G, and 8B is converted into red, green, and blue light by the fluorescence conversion layers 8R, 8G, and 8B, respectively. Injected to the sealing substrate 9 side. Therefore, in the organic light emitting device 20 of the present embodiment, the wavelength of the light emitted from the organic EL light emitting unit 10 that is a light source is converted by the wavelength conversion layer 18. This wavelength-converted light enters each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the incident light is converted into fluorescence in each of the fluorescence conversion layers 8R, 8G, and 8B, and emitted to the sealing substrate 9 side (observer side) as light of three colors of red, green, and blue. Yes.
  • the detail of the structure of each part which comprises the organic light emitting element 20 shown in FIG. 1 is mentioned later.
  • the organic light emitting device 20 of the present embodiment shows an example in which the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B are juxtaposed one by one in FIG. .
  • the fluorescence conversion layers 8R, 8G, and 8B surrounded by a broken line extend in a stripe shape along the y-axis, and each fluorescence conversion layer 8R, 8G along the x-axis. , 8B are sequentially arranged in a two-dimensional stripe arrangement.
  • FIG. 1 The example shown in FIG.
  • each RGB pixel (each fluorescence conversion layer 8R, 8G, 8B) is arranged in stripes, but the present invention is not limited to this, and the arrangement of each RGB pixel is a mosaic.
  • a conventionally known RGB pixel array such as an array or a delta array may be used.
  • a TFT circuit 2 and various wirings (not shown) are formed on the substrate 1.
  • An interlayer insulating film 3 and a planarizing film 4 are sequentially stacked so as to cover the upper surface of the substrate 1 and the TFT circuit 2.
  • the substrate for example, an inorganic material substrate made of glass, quartz or the like, a plastic substrate made of polyethylene terephthalate, polycarbazole, polyimide or the like, an insulating substrate such as a ceramic substrate made of alumina or the like, aluminum (Al), iron (Fe ), Etc., a substrate on which an insulating material such as silicon oxide (SiO 2 ) is coated on the surface, or a method of anodizing the surface of a metal substrate made of Al or the like Although the board
  • this invention is not limited to these.
  • a plastic substrate or a metal substrate since it becomes possible to form a bending part and a bending part without stress, it is preferable to use a plastic substrate or a metal substrate. It is more preferable to use a substrate in which a plastic substrate is coated with an inorganic material and a substrate in which a metal substrate is coated with an inorganic insulating material.
  • a leak short circuit caused by the protrusion of the metal substrate that may occur when the metal substrate is used as the substrate of the organic EL light emitting unit 10.
  • the TFT circuit 2 In order to form the TFT circuit 2 on the base material 1, it is preferable to use a substrate that does not melt at a temperature of 500 ° C. or less and does not cause distortion.
  • a metal substrate When a metal substrate is used as the substrate 1, it is preferable to use a metal substrate formed of an iron-nickel alloy having a linear expansion coefficient of 1 ⁇ 10 ⁇ 5 / ° C. or less. Since a general metal substrate has a thermal expansion coefficient different from that of glass, it is difficult to form the TFT circuit 2 on the metal substrate with an available production apparatus. However, using a metal substrate formed of an iron-nickel alloy having a linear expansion coefficient of 1 ⁇ 10 ⁇ 5 / ° C.
  • the TFT circuit 2 is conventionally formed on the metal substrate. It can be formed at low cost using the production apparatus. Moreover, when using a plastic substrate as the base material 1, the heat-resistant temperature is very low. Therefore, it is possible to transfer and form the TFT circuit 2 on the plastic substrate by forming the TFT circuit 2 on the glass substrate and then transferring the TFT substrate 2 to the plastic substrate.
  • the TFT circuit 2 is formed on the substrate 1 in advance before the organic EL light emitting unit 10 is formed, and functions as a switching device and a driving device.
  • a conventionally known TFT circuit 2 can be used.
  • a metal-insulator-metal (MIM) diode can be used instead of the TFT for switching and driving.
  • the TFT circuit 2 can be formed using a known material, structure, and formation method.
  • amorphous silicon amorphous silicon
  • polycrystalline silicon polysilicon
  • microcrystalline silicon inorganic semiconductor materials such as cadmium selenide, zinc oxide, indium oxide-oxide
  • oxide semiconductor materials such as gallium-zinc oxide
  • organic semiconductor materials such as polythiophene derivatives, thiophene oligomers, poly (p-ferylene vinylene) derivatives, naphthacene, and pentacene.
  • examples of the structure of the TFT circuit 2 include a stagger type, an inverted stagger type, a top gate type, and a coplanar type.
  • a method for forming the active layer constituting the TFT circuit 2 for example, there are the following methods.
  • a method in which impurities are ion-doped into amorphous silicon formed by a plasma enhanced chemical vapor deposition (PECVD) method.
  • PECVD plasma enhanced chemical vapor deposition
  • Amorphous silicon was formed by a low pressure chemical vapor deposition (LPCVD) method using silane (SiH 4 ) gas, and the amorphous silicon was crystallized by a solid phase growth method to obtain polysilicon. Thereafter, ion doping is performed by ion implantation.
  • PECVD plasma enhanced chemical vapor deposition
  • the gate insulating film of the TFT circuit 2 used in this embodiment can be formed using a known material. Examples thereof include SiO 2 formed by PECVD, LPCVD, etc., or SiO 2 obtained by thermally oxidizing a polysilicon film. Further, the signal electrode line, the scanning electrode line, the common electrode line, the first drive electrode, and the second drive electrode of the TFT circuit 2 used in the present embodiment can be formed using a known material, for example, tantalum. (Ta), aluminum (Al), copper (Cu), and the like.
  • the interlayer insulating film 3 can be formed using a known material, for example, silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O). 5 )) or an organic material such as an acrylic resin or a resist material.
  • a known material for example, silicon oxide (SiO 2 ), silicon nitride (SiN or Si 2 N 4 ), tantalum oxide (TaO or Ta 2 O). 5 )
  • an organic material such as an acrylic resin or a resist material.
  • Examples of the method for forming the interlayer insulating film 3 include a dry process such as a chemical vapor deposition (CVD) method and a vacuum deposition method, and a wet process such as a spin coating method. Moreover, it can also pattern by the photolithographic method etc. as needed.
  • the interlayer insulating film 3 (light-shielding insulating film) having light-shielding properties is used. Is preferred. In the present embodiment, the interlayer insulating film 3 and the light-shielding insulating film can be used in combination.
  • Examples of the light-shielding insulating film include those obtained by dispersing pigments or dyes such as phthalocyanine and quinaclone in polymer resins such as polyimide, color resists, black matrix materials, inorganic insulating materials such as Ni x Zn y Fe 2 O 4, and the like. It is done.
  • the flattening film 4 is provided to prevent a defect or the like of the organic EL light emitting unit 10 from being generated due to unevenness of the surface of the TFT circuit 2.
  • Examples of the defect of the organic EL light emitting unit 10 include a pixel electrode defect, an organic EL layer defect, a counter electrode disconnection, a pixel electrode and counter electrode short circuit, and a breakdown voltage decrease.
  • the planarization film 4 can be omitted.
  • the planarization film 4 can be formed using a known material, and examples thereof include inorganic materials such as silicon oxide, silicon nitride, and tantalum oxide, and organic materials such as polyimide, acrylic resin, and resist material.
  • planarizing film 4 examples include a dry process such as a CVD method and a vacuum deposition method, and a wet process such as a spin coating method, but the present invention is not limited to these materials and the forming method. Further, the planarizing film 4 may have a single layer structure or a multilayer structure.
  • an organic EL light emitting unit 10 that is a light source (light emitting source) is formed.
  • the organic EL light emitting unit 10 includes a first electrode 12, a second electrode 16, and an organic EL layer (organic layer) 17.
  • the first electrode 12 is an anode.
  • the second electrode 16 is a cathode disposed so as to face the first electrode 12.
  • the organic EL layer (organic layer) 17 is composed of at least one layer including the light emitting layer 14 sandwiched between the first electrode 12 and the second electrode 16.
  • the first electrode 12 and the second electrode 16 function as a pair as an anode or a cathode of the organic EL light emitting unit 10.
  • the second electrode 16 is a cathode.
  • the second electrode 16 is an anode.
  • FIG. 1 and the following description a case where the first electrode 12 is an anode and the second electrode 16 is a cathode will be described as an example.
  • the hole injection layer and the hole transport layer are arranged on the second electrode side 16 in a laminated structure of an organic EL layer (organic layer) 17 described later.
  • the electron injection layer and the electron transport layer may be on the first electrode 12 side.
  • an electrode material for forming the first electrode 12 and the second electrode 16 a known electrode material can be used.
  • a material for forming the first electrode 12 that is an anode from the viewpoint of efficiently injecting holes into the organic EL layer 17, gold (Au), platinum (Pt), a work function of 4.5 eV or more, Metals such as nickel (Ni) and oxides (ITO) made of indium (In) and tin (Sn), oxides made of tin (Sn) (SnO 2 ), oxides made of indium (In) and zinc (Zn) (IZO) etc. are mentioned.
  • lithium (Li), calcium (with a work function of 4.5 eV or less) from the viewpoint of more efficiently injecting electrons into the organic EL layer 17
  • metals such as Ca), cerium (Ce), barium (Ba), and aluminum (Al), or alloys such as Mg: Ag alloy and Li: Al alloy containing these metals.
  • the first electrode 12 and the second electrode 16 can be formed by a known method such as an EB (electron beam) vapor deposition method, a sputtering method, an ion plating method, or a resistance heating vapor deposition method using the above materials.
  • the present invention is not limited to these forming methods.
  • the formed electrode can be patterned by a photolithographic fee method or a laser peeling method, or a patterned electrode can be directly formed by combining with a shadow mask.
  • the film thickness of the first electrode 12 and the second electrode 16 is preferably 50 nm or more. When the film thicknesses of the first electrode 12 and the second electrode 16 are less than 50 nm, the wiring resistance increases, so that the drive voltage may increase.
  • the organic light emitting device 20 of the present embodiment light emitted from the light emitting layer 14 of the organic EL light emitting unit 10 that is a light source is emitted from the wavelength conversion layer 18 and the fluorescence conversion layers 8R, 8G, and 8B side. Therefore, it is preferable to use a translucent electrode as the second electrode 16.
  • a translucent electrode As the material of the semitransparent electrode, a metal semitransparent electrode alone or a combination of a metal semitransparent electrode and a transparent electrode material can be used, and silver is preferable from the viewpoint of reflectance and transmittance.
  • the film thickness of the semitransparent electrode is preferably 5 nm to 30 nm.
  • the film thickness of the semi-transparent electrode is less than 5 nm, when using the microcavity effect described later, there is a possibility that light cannot be sufficiently reflected and the interference effect cannot be obtained sufficiently. Moreover, when the film thickness of a semi-transparent electrode exceeds 30 nm, since the light transmittance falls rapidly, there exists a possibility that a brightness
  • the extraction efficiency of light emission from the light emitting layer 14 is used as the first electrode 12 located on the side opposite to the side from which light emission from the light emitting layer 14 of the organic EL light emitting unit 10 that is a light source is extracted.
  • a highly reflective electrode that reflects light.
  • electrode materials used in this case include reflective metal electrodes such as aluminum, silver, gold, aluminum-lithium alloys, aluminum-neodymium alloys, and aluminum-silicon alloys, transparent electrodes, and reflective metal electrodes (reflective electrodes). The electrode etc. which combined these are mentioned.
  • FIG. 1 shows an example in which the first electrode 12 that is a transparent electrode is formed on the planarizing film 4 via the reflective electrode 11.
  • the first electrode 12 positioned on the substrate 1 side (the side opposite to the side from which the light emission from the light emitting layer 14 is extracted) is connected to each pixel (each fluorescence conversion layer 8R, 8G, A plurality of parallel arrangements are provided corresponding to 8B).
  • An edge cover 19 made of an insulating material is formed so as to cover each edge portion (end portion) of the adjacent first electrode 12. The edge cover 19 is provided for the purpose of preventing leakage between the first electrode 12 and the second electrode 16.
  • the edge cover 19 can be formed using an insulating material by a known method such as an EB (Electron Beam) vapor deposition method, a sputtering method, an ion plating method, a resistance heating vapor deposition method, or the like. Although patterning can be performed by a lithography method, the present embodiment is not limited to these forming methods. Moreover, a conventionally well-known material can be used as an insulating material layer which comprises the edge cover 19, and it does not specifically limit in this embodiment.
  • the insulating material layer constituting the edge cover 19 needs to transmit light, and examples thereof include SiO, SiON, SiN, SiOC, SiC, HfSiON, ZrO, HfO, and LaO.
  • the film thickness of the edge cover 19 is preferably 100 nm to 2000 nm. By setting the film thickness of the edge cover 19 to 100 nm or more, sufficient insulation is maintained, and leakage occurs between the first electrode 12 and the second electrode 16 to prevent an increase in power consumption and non-light emission. be able to. Further, by setting the film thickness of the edge cover 19 to 2000 nm or less, it is possible to prevent the productivity of the film forming process from being lowered and the disconnection of the second electrode 16 in the edge cover 19 from occurring. Further, the reflective electrode 11 and the first electrode 12 are connected to one of the TFT circuits 2 by a wiring 2 b provided through the interlayer insulating film 3 and the planarizing film 4.
  • the second electrode 16 is connected to one of the TFT circuits 2 by a wiring 2 a provided through the interlayer insulating film 3, the planarizing film 4 and the edge cover 19.
  • Wiring 2a, 2b should just be comprised from the electroconductive material, and is not specifically limited.
  • the wirings 2a and 2b are made of, for example, a material such as Cr, Mo, Ti, Ta, Al, Al alloy, Cu, and Cu alloy.
  • the wirings 2a and 2b are formed by a conventionally known method such as a sputtering or CVD method and a mask process.
  • the organic EL layer (organic layer) 17 may have a single layer structure of the light emitting layer 14 or a multilayer structure such as a stacked structure of the hole transport layer 13, the light emitting layer 14, and the electron transport layer 15 as shown in FIG. good.
  • Specific examples of the organic EL layer (organic layer) 17 include the following configurations, but the present embodiment is not limited thereto.
  • the hole injection layer and the hole transport layer 13 are arranged on the first electrode 12 side that is an anode.
  • the electron injection layer and the electron transport layer 15 are disposed on the second electrode 16 side that is a cathode.
  • the light-emitting layer 14 may be composed only of an organic light-emitting material, or may be composed of a combination of a light-emitting dopant (organic light-emitting material) and a host material, and optionally includes a hole transport material, an electron transport material, Additives (donor, acceptor, etc.) may be included.
  • the light emitting layer 14 may have a configuration in which these materials are dispersed in a polymer material (binding resin) or an inorganic material. From the viewpoint of luminous efficiency and lifetime, a material in which an organic light emitting material that is a light emitting dopant is dispersed in a host material is preferable.
  • the light emitting layer 14 recombines the holes injected from the first electrode 12 and the electrons injected from the second electrode 16, so that light in the green region or light in the red region (green region to red region; wavelength 500 nm). (Up to 780 nm) light is emitted (emitted).
  • the organic light emitting material used for the light emitting layer 14 a conventionally known light emitting material for organic EL can be used, and a material that emits light in a green region to a red region (wavelength: 500 nm to 780 nm) can be used.
  • a low molecular weight organic light emitting material or a high molecular weight organic light emitting material can be used.
  • a fluorescent material or a phosphorescent material can be used. From the viewpoint of reducing power consumption, it is preferable to use a phosphorescent material having high light emission efficiency.
  • the green low molecular luminescent material is an organic luminescent material, it is possible to use a green low molecular luminescent material legacy known organic EL, for example, coumarin derivatives, quinacridone, tris (8-quinolinato) aluminum (Alq 3), Bis (benzoquinolinolato) beryllium (BeBq 2 ), 10- (2-benzothiazoyl) -1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H, 5H, 11H—
  • a fluorescent material such as benzo [1] pyrano [678-ij] quinolizine-11-one (C545T) or a phosphorescent material such as tris (2-phenylpyridine) iridium (Ir (ppy) 3 ) can be used.
  • red low molecular light emitting material which is an organic light emitting material
  • conventionally known red low molecular light emitting materials for organic EL can be used.
  • rubrene phenanthroline europium (Eu (TTA) 3 (phen)
  • Fluorescent materials such as-(disyl-anomethylene) -2-t-butyl-6 (1,1,7,7-tetramethyljurididyl-9-enyl) -4H-pyran (DCJTB), bis (2,4 Phosphorescent materials such as -diphenyl-quinoline) iridium (III) acetyl lanate (Ir (ppy) 2 (acac)), tris (1-phenylisoquinoline) iridium (III) (Ir (Pic) 3 ) can be used .
  • polymer light-emitting material that is an organic light-emitting material
  • conventionally known polymer light-emitting materials that emit light in the green region to red region for organic EL can be used, for example, poly (p-vinylphenylene vinylene) derivatives. (PPV), polyfluorene derivative (PDAF), poly (p-vinylphenylene) derivative (PPP), carbazole derivative (PVK), or the like can be used.
  • PV poly (p-vinylphenylene vinylene) derivatives.
  • PDAF polyfluorene derivative
  • PPP poly (p-vinylphenylene) derivative
  • PVK carbazole derivative
  • organic light emitting material which is a light emitting dopant and a host material
  • a conventionally known organic EL host material can be used as the host material.
  • host materials include the above-described low-molecular organic light-emitting materials, the above-described high-molecular organic light-emitting materials, 4,4′-bis (carbazole) biphenyl, 9,9-di (4-dicarbazole-benzyl) fluorene ( Carbazole such as CPF), 3,6-bis (triphenylsilyl) carbazole (mCP), poly (N-octyl-2,7-carbazole-O-9,9-dioctyl-2,7-fluorene) (PCF) Derivatives, aniline derivatives such as 4- (diphenylphosphoyl) -N, N-diphenylaniline (HM-A1), 1,3-bis (9-phenyl-9H-
  • the hole injection layer and the hole transport layer 13 are used for the purpose of more efficiently injecting holes from the first electrode 12 serving as an anode and transporting (injecting) them to the light emitting layer 14.
  • the electron injection layer and the electron transport layer 15 are formed between the second electrode 16 and the light emitting layer 14 for the purpose of more efficiently injecting electrons from the second electrode 16 serving as a cathode and transporting (injecting) them to the light emitting layer 14.
  • Each of these hole injection layer, hole transport layer 13, electron injection layer, and electron transport layer 15 can use a conventionally known material, and may be composed of only the materials exemplified below.
  • An additive donor, acceptor, etc.
  • Examples of the material constituting the hole transport layer 13 include oxides such as vanadium oxide (V 2 O 5 ) and molybdenum oxide (MoO 2 ), inorganic p-type semiconductor materials, porphyrin compounds, N, N′-bis ( Aromatics such as 3-methylphenyl) -N, N′-bis (phenyl) -benzidine (TPD), N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine (NPD)
  • Low molecular weight materials such as tertiary amine compounds, hydrazone compounds, quinacridone compounds, styrylamine compounds, polyaniline (PANI), polyaniline-camphor sulfonic acid (polyaniline-camphorsulfonic acid; PANI-CSA), 3,4-polyethylenedioxy Thiophene / polystyrene sulfonate (PEDOT / PSS), poly (triphenylamine) derivative (Poly
  • the highest occupied molecular orbital (HOMO) is more preferable than the material used for the hole transport layer 13 in that holes are more efficiently injected and transported from the first electrode 12 serving as the anode. It is preferable to use a material having a low energy level. As the hole transport layer 13, it is preferable to use a material having a higher hole mobility than the material used for the hole injection layer.
  • the material for forming the hole injection layer include phthalocyanine derivatives such as copper phthalocyanine, 4,4 ′, 4 ′′ -tris (3-methylphenylphenylamino) triphenylamine, and 4,4 ′, 4 ′′ -tris.
  • acceptor a conventionally well-known material can be used as an acceptor material for organic EL.
  • Acceptor materials include Au, Pt, W, Ir, POCl 3 , AsF 6 , Cl, Br, I, vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 2 ), and other inorganic materials, TCNQ (7, 7 , 8,8, -tetracyanoquinodimethane), TCNQF4 (tetrafluorotetracyanoquinodimethane), TCNE (tetracyanoethylene), HCNB (hexacyanobutadiene), DDQ (dicyclodicyanobenzoquinone), etc.
  • Examples thereof include compounds, compounds having a nitro group such as TNF (trinitrofluorenone) and DNF (dinitrofluorenone), and organic materials such as fluoranyl, chloranil and bromanyl.
  • compounds having a cyano group such as TCNQ, TCNQF4, TCNE, HCNB, and DDQ are more preferable because they can increase the carrier concentration effectively.
  • the electron blocking layer the same materials as those described above as the hole transport layer 13 and the hole injection layer can be used.
  • Examples of the material constituting the electron transport layer 15 include an inorganic material that is an n-type semiconductor, an oxadiazole derivative, a triazole derivative, a thiopyrazine dioxide derivative, a benzoquinone derivative, a naphthoquinone derivative, an anthraquinone derivative, a diphenoquinone derivative, a fluorenone derivative, Low molecular materials such as benzodifuran derivatives; polymer materials such as poly (oxadiazole) (Poly-OXZ) and polystyrene derivatives (PSS).
  • the material constituting the electron injection layer examples include fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • fluorides such as lithium fluoride (LiF) and barium fluoride (BaF 2 ), and oxides such as lithium oxide (Li 2 O).
  • the energy level of the lowest unoccupied molecular orbital (LUMO) is higher than that of the material used for the electron transport layer 15 in that electrons are injected and transported more efficiently from the second electrode 16 serving as the cathode. It is preferable to use a material having a high value.
  • the material used for the electron transport layer 15 it is preferable to use a material having higher electron mobility than the material used for the electron injection layer.
  • the electron injection layer and the electron transport layer 15 are preferably doped with a donor.
  • a donor a conventionally well-known material can be used as a donor material for organic EL.
  • Donor materials include inorganic materials such as alkali metals, alkaline earth metals, rare earth elements, Al, Ag, Cu, and In, anilines, phenylenediamines, N, N, N ′, N′-tetraphenylbenzidine, N , N′-bis- (3-methylphenyl) -N, N′-bis- (phenyl) -benzidine, N, N′-di (naphthalen-1-yl) -N, N′-diphenyl-benzidine, etc.
  • Benzidines triphenylamine, 4,4 ′, 4 ′′ -tris (N, N-diphenyl-amino) -triphenylamine, 4,4 ′, 4 ′′ -tris (N-3-methylphenyl-N Triphenylamines such as -phenyl-amino) -triphenylamine, 4,4 ', 4 "-tris (N- (1-naphthyl) -N-phenyl-amino) -triphenylamine, N, N' -Di- (4-methyl-fur Nyl) -N, N'-diphenyl-1,4-phenylenediamine and other aromatic tertiary amine compounds such as phenanthrene, pyrene, perylene, anthracene, tetracene, pentacene, etc.
  • organic materials such as compounds (however, the condensed polycyclic compound may have a substituent), TTFs (tetrathiafulvalene), dibenzofuran, phenothiazine, and carbazole.
  • TTFs tetrathiafulvalene
  • dibenzofuran phenothiazine
  • carbazole a compound having an aromatic tertiary amine as a skeleton, a condensed polycyclic compound, and an alkali metal are more preferable because the carrier concentration can be increased more effectively.
  • the hole blocking layer the same materials as those described above as the electron transport layer 15 and the electron injection layer can be used.
  • the above materials are used as solvents.
  • a coating liquid for forming an organic EL layer dissolved and dispersed in a coating method such as spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method, ink jet method, letterpress printing method, intaglio printing method .
  • a method of forming by a known wet process such as a screen printing method, a printing method such as a micro gravure coating method, or the above-described materials by resistance heating vapor deposition, electron beam (EB: Electron Beam) vapor deposition, molecular beam epitaxy ( MBE: Molecular Beam Epitaxy, sputtering, organic vapor deposition (OVPD: Organic V) Method for forming por Phase Deposition) method or the like of the known dry process, or may be a method of
  • the film thickness of each layer constituting the organic EL layer 17 is usually about 1 nm to 1000 nm, and more preferably 10 nm to 200 nm. If the film thickness of each layer constituting the organic EL layer 17 is less than 10 nm, it may not be possible to obtain originally required physical properties (charge (electron, hole) injection characteristics, transport characteristics, confinement characteristics); There is a risk of pixel defects due to foreign matter such as dust. Moreover, when the film thickness of each layer constituting the organic EL layer 17 exceeds 200 nm, the driving voltage increases, which may lead to an increase in power consumption.
  • the first electrode 12 and the second electrode 16 in the organic EL light emitting unit 10 are reflective electrodes having light reflectivity.
  • the optical film thickness L between the reflective interfaces defined by the pair of reflective electrodes 12 and 16 is set so as to enhance the intensity of light of a specific wavelength among the light emitted from the light emitting layer 14.
  • “light of a specific wavelength” means light in the green region to red region (wavelength 500 nm to 780 nm).
  • the optical film thickness L By setting the optical film thickness L in this way, a microcavity effect (multiple reflection interference effect) appears between the first electrode 12 (reflecting electrode) and the second electrode 16 (semi-transparent electrode) which are reflective electrodes. Further, the light extraction efficiency can be improved. More specifically, by setting the optical film thickness L of the organic EL light emitting unit 10 as described above, the light emitted from the light emitting layer 14 is repeatedly reflected between the first electrode 12 and the second electrode 16 facing each other. At this time, light in the green region to red region is intensified by multiple interference and is emitted from the second electrode 16 to the wavelength conversion layer 18 side.
  • the intensity of light in the green region to red region incident on the wavelength conversion layer 18 is increased, and the wavelength is converted by the wavelength conversion layer 18 and emitted to the fluorescence conversion layers 8R, 8G, and 8B side.
  • the wavelength conversion efficiency in the wavelength conversion layer 18 can be increased.
  • the light intensity when assuming that one photon (photon) is present in a microcavity of 1 ⁇ m is about 3000 W / cm 2 . This value is sufficient to produce a nonlinear effect even with one photon.
  • the wavelength conversion efficiency in the wavelength conversion layer 18 can be increased in this way, the amount of red, green, and blue light that is fluorescently converted in each phosphor conversion layer 8R, 8G, and 8B increases, and organic light emission occurs.
  • the light extraction efficiency of the element 20 can be improved, and the organic light-emitting element 20 with good light emission efficiency can be obtained.
  • a wavelength conversion layer 18 is formed on the organic EL light emitting unit 10.
  • the wavelength conversion layer 18 is a layer having a function of converting the wavelength of light emitted from the organic EL light emitting unit 10 and emitting it to the fluorescence conversion layers 8R, 8G, and 8B.
  • Examples of the wavelength conversion layer 18 include a layer that can convert the wavelength of light emitted from the organic EL light emitting unit 10 to be short.
  • the wavelength conversion layer 18 uses a second-order nonlinear optical effect such as second-harmonic generation (SHG) to change the wavelength of light incident into the wavelength conversion layer 18 to 2.
  • SHG second-harmonic generation
  • the wavelength conversion layer 18 that is SHG By using the wavelength conversion layer 18 that is SHG, the wavelength of the light in the red region to the green region emitted from the organic EL light emitting unit 10 is converted to half and converted into the light in the ultraviolet region to the blue region.
  • the light in the ultraviolet region to the blue region can be emitted to the fluorescence conversion layers 8R, 8G, and 8B.
  • the wavelength conversion layer 18 that is SHG converts the light to a wavelength having a wavelength of 300 nm that is a half wavelength, and the light having a wavelength of 300 nm is converted into each fluorescence conversion layer 8R. , 8G, and 8B.
  • SHG can be considered that two photons having an angular frequency ⁇ are converted into one photon having an angular frequency 2 ⁇ in terms of quantum mechanics.
  • an energy conservation law expressed by the following formula (1) is established between related photons.
  • the momentum conservation law expressed by the following equation (2) holds, and this is the phase matching condition.
  • Such quasi-phase matching has a structure in which the sign of the nonlinear optical coefficient is inverted with a period ⁇ along the propagation axis of the nonlinear optical crystal, and the wave vector of the nonlinear polarization and the light wave to be generated This is a method of achieving phase matching by compensating for the difference from the wave vector with the wave vector ⁇ (
  • QPM Quasi-Phase Matching
  • FIG. 3A and 3B are diagrams illustrating wavelength conversion by quasi phase matching (QPM), and FIG. 3A is a diagram illustrating a relationship between polarization reversal and propagation distance.
  • QPM quasi phase matching
  • FIG. 3A a two-dot chain line indicates a case where there is no polarization inversion in a medium through which light passes.
  • a solid line indicates a case where there is a polarization inversion in a medium through which light passes.
  • FIG. 3B is a diagram schematically illustrating the QPM device. In FIG. 3B, the arrows indicate the movement of polarization.
  • phase matching is not achieved, there is a difference in phase velocity between the fundamental wave light and the generated wavelength converted light.
  • wavelength converted light that is generated one after another as the fundamental wave propagates in the crystal. Occurs with a slight phase shift.
  • the generated wavelength-converted lights are gradually increased in intensity as they are added, but when the phase difference between the wavelength-converted lights generated at two points separated by a certain distance Lc becomes ⁇ , they cancel each other and conversely the intensity. Attenuates.
  • the intensity of the wavelength-converted light is periodically increased and decreased as indicated by a two-dot chain line in FIG. 3A.
  • a periodically poled structure is formed by periodically inverting the crystal polarization for each distance Lc called a coherent length.
  • the period of polarization inversion ⁇ is twice as long as the coherent length Lc with a pair of positive and negative polarization regions as a pair.
  • the corresponding wavelength and conversion method can be customized by adjusting the polarization inversion period ⁇ .
  • the polarization inversion period ⁇ can be expressed by the following equation (3). As shown in the following formula (3), the polarization inversion period is determined by the incident fundamental wave wavelength.
  • n ⁇ is the refractive index with respect to the fundamental wavelength
  • n 2 ⁇ is the refractive index with respect to the second harmonic.
  • the QPM device can select the orientation that forms the domain-inverted structure, and can use highly nonlinear constants that cannot be realized with conventional birefringence phase matching. Is possible. Thus, by using the QPM technology, highly efficient wavelength conversion corresponding to various wavelengths can be realized.
  • the wavelength conversion layer 18 is not particularly limited as long as it is a layer that generates SHG, and a multi-layer structure using quasi phase matching (QPM) considering the phase matching described above can also be used.
  • the wavelength conversion layer 18 is preferably formed by laminating a plurality of layers in which the polarization directions are alternately reversed, and has a polarization reversal period ⁇ (that is, coherent).
  • ⁇ that is, coherent
  • a structure in which a plurality of layers are laminated so as to periodically invert the polarization of the crystal is preferable (for each length Lc).
  • the wavelength conversion layer 18 which is the second harmonic generation (SHG) using QPM
  • a layer formed by laminating a plurality of layers in which polarization directions are alternately reversed can be cited.
  • a laminated body 18A (FIG. 4) in which each layer is made of a single-polarized dielectric material, and a plurality of layers 18a and 18b whose polarization directions are alternately reversed are laminated.
  • a laminated body 18B (FIG. 5) configured by alternately laminating semiconductor layers 18c and dielectric layers 18d.
  • the dielectric material constituting the wavelength conversion layer 18 which is a laminated body (wavelength conversion layer) 18 A in which a plurality of layers 18 a and 18 b each made of a single-polarized dielectric material are laminated
  • a ferroelectric material is used. Examples include body materials, glass materials, and polymer materials.
  • the ferroelectric material constituting the wavelength conversion layer 18 include those conventionally known as ferroelectric materials, such as LiNbO 3 (LN), LiTaO 3 (LT), and KTiOPO 4 (KTP) having a congruent composition.
  • ⁇ -BaB 2 O 4 BBO
  • KNbO 3 KN
  • KH 2 PO 4 KDP
  • LiB 3 O 5 LBO
  • CsLiB 6 O 12 CLBO
  • Ta 2 O 5 Nb 2 O 3
  • AgGaS 2 ZnGeP 2 (ZGP)
  • Examples of the glass material constituting the wavelength conversion layer 18 include SiO 2 , GeO 2 SiO 2 , quartz glass, and silicate fiber.
  • Examples of the polymer material constituting the wavelength conversion layer 18 include 4- (N-methyl-N- (4′-nitrophenyl) aminomethyl) styrene, 4- (N-methyl-N- (4′-cyanophenyl).
  • the wavelength conversion layer 18 is a stacked body (wavelength conversion layer) 18B configured by alternately stacking the semiconductor layers 18c and the dielectric layers 18d, the semiconductor layer 18c having a large second-order nonlinear optical constant, Dielectric layers 18d having a small nonlinear optical constant are periodically and alternately stacked, thereby generating second harmonic generation (SHG) using QPM.
  • the material constituting the semiconductor layer 18c of the wavelength conversion layer 18B include ZnO, ZnS, GaN, and CuCl.
  • As a material for forming the dielectric layer 18d of the wavelength conversion layer 18B TiO 2, SiO 2, HfO 2 , and the like.
  • the thicknesses of the plurality of layers constituting the wavelength conversion layer 18 are calculated from the above formula (3) and the like according to the material of the wavelength conversion layer 18 and the wavelength of light emitted from the organic EL light emitting unit 10. Further, it may be adjusted as appropriate. Further, the thickness of the entire wavelength conversion layer 18 is not particularly limited and can be appropriately changed. For example, the thickness can be set to about 1 ⁇ m to 100 ⁇ m.
  • the formation method of the wavelength conversion layer 18 is not specifically limited, A conventionally well-known method can be used as a formation method of the wavelength conversion layer of the 2nd harmonic generation (SHG) using QPM, for example, ion It can be formed by a method such as a beam sputtering method or a plasma deposition method.
  • the organic light emitting device 20 of the present embodiment has a second harmonic generation (SHG) wavelength having a QPM structure between the light extraction side of the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the conversion layer 18 is disposed.
  • the wavelength of the green region to red region light emitted from the organic EL light emitting unit 10 is converted into a half wavelength in the wavelength conversion layer 18 to obtain ultraviolet region to blue region light.
  • the fluorescence conversion layers 8R, 8G, and 8B can be emitted.
  • An inorganic sealing film 5 made of SiO, SiON, SiN or the like is formed so as to cover the upper surface of the wavelength conversion layer 18 and the side surfaces of the organic EL light emitting unit 10 and the wavelength conversion layer 18.
  • the inorganic sealing film 5 can be formed by depositing an inorganic film such as SiO, SiON, SiN or the like by plasma CVD, ion plating, ion beam, sputtering, or the like.
  • the inorganic sealing film 5 takes out the light wavelength-converted in the wavelength conversion layer 18, it needs to be light transmissive.
  • the sealing substrate 9 is arranged so that the respective fluorescence conversion layers 8R, 8G, and 8B and the organic EL light emitting unit 10 face each other with the wavelength conversion layer 18 interposed therebetween.
  • a red fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, and a blue fluorescence conversion layer 8B that are partitioned and arranged in parallel by the black matrix 7 are formed.
  • a sealing material 6 is sealed between the inorganic sealing film 5 and the sealing substrate 9.
  • the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B that are disposed to face the organic EL light emitting unit 10 are each surrounded by the black matrix 7 and sealed. It is enclosed in a sealing region surrounded by the material 6.
  • the sealing substrate 9 As the sealing substrate 9, the same thing as the board
  • the sealing substrate 9 is a light-transmitting material. Need to use.
  • a conventionally known sealing material can be used for the sealing material 6, and a conventionally known sealing method can also be used as a method for forming the sealing material 6. Specifically, for example, when an inert gas such as nitrogen gas or argon gas is used as the sealing material 6, a method of sealing the inert gas such as nitrogen gas or argon gas with a sealing substrate 9 such as glass. Is mentioned.
  • a moisture absorbent such as barium oxide in the enclosed inert gas because deterioration of the organic EL due to moisture can be effectively reduced.
  • resin curable resin
  • a curable resin (a photocurable resin or a thermosetting resin) is applied on each of the fluorescence conversion layers 8R, 8G, and 8B of the substrate 9 by using a spin coating method or a laminating method.
  • the sealing material 6 can be formed.
  • oxygen and moisture can be prevented from entering the organic EL light emitting unit 10 from the outside, and the life of the organic EL light emitting unit 10 can be improved.
  • the sealing material 6 needs to have a light transmittance.
  • light in the red region to green region emitted from the organic EL light emitting unit 10 that is a light source is wavelength-converted by the wavelength conversion layer 18 and light in the ultraviolet region to blue region (wavelength 250 nm to 400 nm).
  • the light in the ultraviolet region to the blue region is incident on the fluorescence conversion layers 8R, 8G, and 8B.
  • the red fluorescence conversion layer 8R absorbs the light in the ultraviolet region to the blue region converted in wavelength by the wavelength conversion layer 18, converts the light into the light in the red region, and emits the light in the red region to the sealing substrate 9 side.
  • the green fluorescence conversion layer 8G absorbs the light in the ultraviolet region to the blue region that has been wavelength-converted in the wavelength conversion layer 18, converts it to light in the green region, and emits light in the green region to the sealing substrate 9 side.
  • the blue fluorescence conversion layer 8 ⁇ / b> B absorbs the ultraviolet light that has been wavelength-converted by the wavelength conversion layer 18, converts the light into the blue light, and emits the blue light to the sealing substrate 9 side.
  • the light emitted from the organic EL light emission part 10 is converted into the wavelength conversion layer 18 and each fluorescence conversion layer 8R, Full color conversion can be achieved by converting light of red, green, and blue from the sealing substrate 9 side after conversion at 8G and 8B.
  • the blue fluorescence conversion layer 8B can be omitted.
  • a functional layer configured by dispersing transparent particles in a binder resin may be provided.
  • a blue color filter may be provided.
  • the red fluorescence conversion layer 8R absorbs and excites light in the ultraviolet region to blue region that has been wavelength-converted by the wavelength conversion layer 18, and emits fluorescence in the red region (converts light having a wavelength different from that of the light source).
  • a phosphor material that can be used As a phosphor material for converting light in the ultraviolet region to blue region into light in the red region, conventionally known phosphor materials can be used, and both organic phosphor materials and inorganic phosphor materials are used. be able to.
  • cyanine dyes such as 4-dicyanomethylene-2-methyl-6- (p-dimethylaminostyryl) -4H-pyran, 1-ethyl-2- [4- (p-dimethylamino) Pyridine dyes such as phenyl) -1,3-butadienyl] -pyridinium-perchlorate, and rhodamine dyes such as rhodamine B, rhodamine 6G, rhodamine 3B, rhodamine 101, rhodamine 110, basic violet 11, sulforhodamine 101, etc.
  • the green fluorescence conversion layer 8G absorbs and excites the ultraviolet to blue light converted in wavelength by the wavelength conversion layer 18 and emits green fluorescence (converts light having a wavelength different from that of the light source).
  • a phosphor material that can be used As a phosphor material for converting light in the ultraviolet region to blue region into light in the green region, conventionally known phosphor materials can be used, and both organic phosphor materials and inorganic phosphor materials are used. be able to.
  • 2,3,5,6-1H, 4H-tetrahydro-8-trifluoromethylquinolidine (9,9a, 1-gh) coumarin (coumarin 153), 3- (2′-benzothiazolyl) ) -7-diethylaminocoumarin (coumarin 6), 3- (2′-benzimidazolyl) -7-N, N-diethylaminocoumarin (coumarin 7) and other coumarin dyes, basic yellow 51, solvent yellow 11, solvent yellow 116, etc.
  • Organic green phosphor materials such as naphthalimide dyes, (BaMg) Al 16 O 27 : Eu 2+ , Mn 2+ , Sr 4 Al 14 O 25 : Eu 2+ , (SrBa) Al 12 Si 2 O 8 : Eu 2+ , (BaMg) 2 SiO 4 : Eu 2+ , Y 2 SiO 5 : Ce 3+ , Tb 3+ , Sr 2 P 2 O 7- Sr 2 B 2 O 5 : Eu 2+ , (BaCaMg) 5 (PO 4 ) 3 Cl: Eu 2+ , Sr 2 Si 3 O 8 -2SrCl 2 : Eu 2+ , Zr 2 SiO 4 , MgAl 11 O 19 : Ce Examples thereof include inorganic green phosphor materials such as 3+ , Tb 3+ , Ba 2 SiO 4 : Eu 2+ , Sr 2 SiO 4 : Eu 2+ , and (BaSr) SiO 4 : Eu 2
  • the blue fluorescence conversion layer 8B can absorb and excite light in the ultraviolet region wavelength-converted by the wavelength conversion layer 18 to emit blue region fluorescence (convert to light having a wavelength different from that of the light source).
  • a phosphor material is included.
  • a phosphor material that converts light in the ultraviolet region into light in the blue region a conventionally known phosphor material can be used, and either an organic phosphor material or an inorganic phosphor material can be used. .
  • stilbene dyes such as 1,4-bis (2-methylstyryl) benzene, trans-4,4′-diphenylstilbenzene, and coumarin dyes such as 7-hydroxy-4-methylcoumarin.
  • Organic blue phosphor materials such as Sr 2 P 2 O 7 : Sn 4+ , Sr 4 Al 14 O 25 : Eu 2+ , BaMgAl 10 O 17 : Eu 2+ , SrGa 2 S 4 : Ce 3+ , CaGa 2 S 4 : Ce 3+ , (Ba, Sr) (Mg, Mn) Al 10 O 17 : Eu 2+ , (Sr, Ca, Ba 2 , Mg) 10 (PO 4 ) 6 Cl 2 : Eu 2+ , BaAl 2 SiO 8 : Eu 2+ , Sr 2 P 2 O 7: Eu 2+, Sr 5 (PO 4) 3 Cl: Eu 2+, (Sr, Ca, Ba) 5 (PO 4) 3 Cl: Eu 2+ BaMg 2 Al 16 O 27: Eu 2+, (Ba, Ca) 5 (PO 4) 3 Cl: Eu 2+, Ba 3 MgSi 2 O 8: Eu 2+, Sr 3 MgSi 2 O 8: inorganic blue Eu 2
  • an inorganic phosphor material is used because stability such as deterioration due to excitation light and light emission is improved. It is preferable to do.
  • the inorganic red phosphor may be subjected to a surface modification treatment as necessary. Examples of the surface modification treatment include chemical treatment using a silane coupling agent, physical treatment using addition of submicron-order fine particles, and combinations thereof. Further, when an inorganic phosphor material is used, it is preferable to use an inorganic phosphor material having an average particle diameter (d50) of 1 ⁇ m to 50 ⁇ m.
  • the average particle size (d50) is less than 1 ⁇ m, the luminous efficiency of the phosphor material may be rapidly reduced. Further, if the average particle diameter (d50) exceeds 50 ⁇ m, it becomes difficult to form a flat film, and depletion occurs between each of the fluorescence conversion layers 8R, 8G, and 8B and the organic EL light emitting unit 10. (Depletion (refractive index: 1.0) between the organic EL light emitting part (refractive index: about 1.7) and each fluorescence conversion layer (refractive index: about 2.3)). Thereby, the light from the organic EL light emitting unit 10 may not efficiently reach the fluorescence conversion layers 8R, 8G, and 8B, and the light emission efficiency of each of the fluorescence conversion layers 8R, 8G, and 8B may decrease.
  • the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B may be composed of only the above-described phosphor material, and optionally contain additives such as polymer, silica, and metal particles. Also good.
  • the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B may have a configuration in which a phosphor material is dispersed in an inorganic material such as a binder resin or silica. Among these, those in which a phosphor material is dispersed in a binder resin are preferable. A conventionally well-known thing can be used as binder resin, It does not specifically limit.
  • a photosensitive resin as the binder resin because patterning can be performed by a photolithography method.
  • the photosensitive resin one of photosensitive resins having a reactive vinyl group (photocurable resist material) such as acrylic acid resin, methacrylic acid resin, polyvinyl cinnamate resin, and hard rubber resin.
  • the seeds can be used alone or in admixture of two or more.
  • the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B can be formed by a conventionally known method.
  • the above-described phosphor material and a resin material such as a binder resin are dissolved and dispersed in a solvent.
  • spin coating method, dipping method, doctor blade method, discharge coating method, spray coating method and other coating methods ink jet method, letterpress printing method, intaglio printing method, screen printing method
  • it can be formed by a wet process such as a printing method such as a micro gravure coating method.
  • dry processes such as resistance heating vapor deposition, electron beam (EB) vapor deposition, molecular beam epitaxy (MBE), sputtering, organic vapor deposition (OVPD) using the above-mentioned phosphor, or It can also be formed by a laser transfer method or the like.
  • EB electron beam
  • MBE molecular beam epitaxy
  • OVPD organic vapor deposition
  • the fluorescence conversion layers 8R, 8G, 8B The content of the phosphor material is not particularly limited and can be changed as appropriate.
  • the content of the phosphor material in each fluorescence conversion layer 8R, 8G, 8B is preferably 1% by mass to 50% by mass with respect to the total amount of each fluorescence conversion layer 8R, 8G, 8B. More preferably, the content is 30% by mass.
  • the film thickness of the red fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B can usually be about 100 nm to 100 ⁇ m, and preferably 1 ⁇ m to 100 ⁇ m. If the thickness of each of the fluorescence conversion layers 8R, 8G, and 8B is less than 100 nm, the light in the ultraviolet region to the blue region that has been wavelength-converted by the wavelength conversion layer 18 cannot be sufficiently absorbed, resulting in a decrease in luminous efficiency. In other words, the color purity may be deteriorated by the blue transmitted light mixed with the converted fluorescence.
  • each of the fluorescence conversion layers 8R, 8G, and 8B exceeds 100 ⁇ m, the light in the ultraviolet region to the blue region that has been wavelength-converted by the wavelength conversion layer 18 is already sufficiently absorbed, leading to an increase in efficiency. In other words, there is a possibility that the production cost will be increased because the material is merely consumed. Further, in order to increase the absorption of light emitted from the wavelength conversion layer 18 and reduce the transmitted light in the blue region to the extent that the color purity is not adversely affected, the films of the respective fluorescence conversion layers 8R, 8G, and 8B The thickness is preferably 1 ⁇ m or more.
  • each fluorescence conversion layer 8R, 8G, 8B opposite to the sealing substrate 9 is flattened by a flattening film or the like (not shown). Accordingly, when the organic EL light emitting unit 10 and the respective fluorescence conversion layers 8R, 8G, and 8B are brought into close contact with each other with the sealing material 6 interposed therebetween, the organic EL light emitting unit 10 and the respective fluorescence conversion layers 8R, 8G, It can prevent depletion between 8B. And the adhesiveness of the board
  • the planarizing film the same one as the planarizing film 4 described above can be used.
  • a black matrix 7 is formed between each fluorescence conversion layer adjacent to each fluorescence conversion layer 8R, 8G, 8B.
  • the black matrix 7 conventionally known materials and forming methods can be used, and are not particularly limited. Among them, the light that is incident on and scattered by the fluorescence conversion layers 8R, 8G, and 8B is further reflected by the fluorescence conversion layers 8R, 8G, and 8B, such as a metal having light reflectivity. Preferably it is.
  • the blue fluorescence conversion layer 8B can be omitted.
  • a functional layer may be provided at the position of the blue fluorescence conversion layer 8B for the purpose of improving the viewing angle characteristics and extraction efficiency of light in the blue region.
  • This functional layer is configured by dispersing transparent particles in a binder resin.
  • the thickness of the functional layer is usually 10 ⁇ m to 100 ⁇ m, preferably 20 ⁇ m to 50 ⁇ m.
  • the binder resin used in the functional layer conventionally known resins can be used, and are not particularly limited, but those having optical transparency are preferable.
  • the transparent particles are not particularly limited as long as they can scatter and transmit light in the blue region wavelength-converted by the wavelength conversion layer 18.
  • polystyrene having an average particle size of 25 ⁇ m and a standard deviation of particle size distribution of 1 ⁇ m. Particles or the like can be used.
  • the content of the transparent particles in the functional layer can be appropriately changed and is not particularly limited.
  • the functional layer can be formed by a conventionally known method, and is not particularly limited.
  • a spin coating method For example, using a coating solution in which a binder resin and transparent particles are dissolved and dispersed in a solvent, a spin coating method, By a known wet process such as a dipping method, a doctor blade method, a coating method such as a discharge coating method, a spray coating method, an inkjet method, a relief printing method, an intaglio printing method, a screen printing method, a printing method such as a micro gravure coating method, etc. Can be formed.
  • the organic light emitting device 20 of the present embodiment has the following configuration.
  • the wavelength conversion layer 18 is provided between the organic EL light emitting unit 10 and the fluorescence conversion layers 8R, 8G, and 8B. Is arranged.
  • the organic light emitting element 20 uses an organic EL light emitting unit 10 that emits light in a green region to a red region as a light source.
  • the organic light emitting element 20 converts the light emitted from the organic EL light emitting unit 10 into a wavelength in the wavelength conversion layer 18 to obtain light in the ultraviolet region to the blue region, and converts the light in the ultraviolet region to the blue region into the fluorescence conversion layers 8R, 8G, Full-colorization is realized by emitting to 8B and converting the fluorescence into red, green, and blue light in each of the fluorescence conversion layers 8R, 8G, and 8B.
  • a blue light emitting material with insufficient brightness and life is used as the light source.
  • the organic light emitting device 20 of the present embodiment the brightness and life superior to the blue light emitting material as the light source.
  • the organic EL light emitting unit 10 that emits light in the green region to the red region having the above can be used, and the luminance and lifetime can be improved.
  • the organic light emitting element 20 of this embodiment is provided with a polarizing plate on the light extraction side (on the sealing substrate 9).
  • a polarizing plate a combination of a conventionally known linearly polarizing plate and a ⁇ / 4 plate can be used.
  • a polarizing plate it is possible to prevent external light reflection from the first electrode 12 and the second electrode 16 and external light reflection on the surface of the substrate 1 or the sealing substrate 9, and organic light emission.
  • the contrast of the element 20 can be improved.
  • the wavelength conversion layer 18 is disposed on the organic EL light emitting unit 10, and the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B are included in the wavelength conversion layer 18.
  • this embodiment is not limited to this. If the wavelength conversion layer 18 is disposed between the light extraction side (second electrode 16 side) of the organic light emitting element 20 and each of the fluorescence conversion layers 8R, 8G, and 8B, the organic material of the above-described embodiment is used. The same effects as the light emitting element 20 can be obtained.
  • FIG. 6 is a schematic cross-sectional view showing an example of an organic light-emitting element that can achieve the same effects as the organic light-emitting element 20 of the present embodiment described above.
  • An organic light emitting element 20B shown in FIG. 6 includes a substrate 1, an organic EL light emitting unit (light source) 10, a sealing substrate 9, a fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, a blue fluorescence conversion layer 8B, and a wavelength conversion. It is schematically composed of the layer 18.
  • the substrate 1 includes a TFT (Thin Film Transistor) circuit 2.
  • the organic EL light emitting unit (light source) 10 is provided on the substrate 1 via the interlayer insulating film 3 and the planarizing film 4.
  • the fluorescence conversion layer 8 ⁇ / b> R, the green fluorescence conversion layer 8 ⁇ / b> G, and the blue fluorescence conversion layer 8 ⁇ / b> B are partitioned by the black matrix 7 and arranged in parallel on one surface of the sealing substrate 9.
  • the wavelength conversion layer 18 is disposed between the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the substrate 1 and the sealing substrate 9 are arranged so that the organic EL light emitting unit 10 and the fluorescence conversion layers 8R, 8G, and 8B face each other with the sealing material 6 and the wavelength conversion layer 18 interposed therebetween.
  • the organic EL light emitting unit 10 is covered with the inorganic sealing film 5, and the wavelength conversion layer 18 is formed on the inorganic sealing film 5.
  • an organic EL layer (organic layer) 17 is sandwiched between the first electrode 12 and the second electrode 16.
  • the organic EL layer (organic layer) 17 is a stack of a hole transport layer 13, a light emitting layer 14, and an electron transport layer 15.
  • a reflective electrode 11 is formed on the lower surface of the first electrode 12.
  • the reflective electrode 11 and the first electrode 12 are connected to one of the TFT circuits 2 by a wiring 2 b provided through the interlayer insulating film 3 and the planarizing film 4.
  • the second electrode 16 is connected to one of the TFT circuits 2 by a wiring 2 a provided through the interlayer insulating film 3, the planarizing film 4 and the edge cover 19.
  • the inorganic sealing film 5 is formed so as to cover the upper surface and the side surface of the organic EL light emitting unit 10, and the wavelength conversion layer 18 is formed on the inorganic sealing film 5. Even in this case, the same effects as those of the organic light emitting device 20 of the present embodiment described above can be obtained. Further, in the organic light emitting device 20B shown in FIG. 6, even if the wavelength conversion layer 18 and each of the fluorescence conversion layers 8R, 8G, and 8B are in contact with each other, the same effects as those of the organic light emitting device 20 of the present embodiment described above can be obtained. Can do. The same applies to the embodiments described later.
  • FIG. 7 is a schematic cross-sectional view illustrating an example of an organic light-emitting device according to the second embodiment of the present invention.
  • 7 includes a substrate 1, an organic EL light emitting unit (light source) 10, a sealing substrate 9, a fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, a blue fluorescence conversion layer 8B, and a wavelength conversion.
  • the layer 18 and the light reflective layer 31 are roughly configured.
  • the substrate 1 includes a TFT (Thin Film Transistor) circuit 2.
  • the organic EL light emitting unit (light source) 10 is provided on the substrate 1 with the interlayer insulating film 3 and the planarizing film 4 interposed therebetween.
  • the fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B are partitioned by the black matrix 7 and arranged in parallel on one surface of the sealing substrate 9.
  • the wavelength conversion layer 18 is disposed between the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the light reflective layer 31 is disposed on the light extraction side of the wavelength conversion layer 18. In the substrate 1 and the sealing substrate 9, the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B are opposed to each other with the sealing material 6, the light reflective layer 31, and the wavelength conversion layer 18 therebetween. Is arranged.
  • the organic EL light emitting unit 10 and the wavelength conversion layer 18 are covered with the inorganic sealing film 5.
  • a hole transport layer 13, and an organic EL layer (organic layer) 17 in which a light emitting layer 14 and an electron transport layer 15 are stacked are sandwiched between a first electrode 12 and a second electrode 16.
  • a reflective electrode 11 is formed on the lower surface of the first electrode 12.
  • the reflective electrode 11 and the first electrode 12 are connected to one of the TFT circuits 2 by a wiring 2 b provided through the interlayer insulating film 3 and the planarizing film 4.
  • the second electrode 16 is connected to one of the TFT circuits 2 by a wiring 2 a provided through the interlayer insulating film 3, the planarizing film 4 and the edge cover 19.
  • the same components as those of the organic light emitting devices 20 and 20B of the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
  • the organic light emitting device 30 of the present embodiment is on the light extraction side (each fluorescence conversion layer 8R, 8G, 8B side) of the wavelength conversion layer 18.
  • the light reflective layer 31 is disposed.
  • the light reflective layer 31 has light reflectivity and is formed of a material such as Ag, Al, Cr, Mo, Au, ITO, or an alloy thereof.
  • the film thickness of the light reflective layer 31 can be changed as appropriate, for example, about 10 nm to 1 ⁇ m, and is formed by a method such as vapor deposition or sputtering.
  • the second electrode 16 in the organic EL light emitting unit 10 is a reflective electrode having light reflectivity, and the light reflective layer 31 is provided on the light extraction side of the wavelength conversion layer 18.
  • the optical film thickness L 2 between the reflective interfaces defined by the reflective electrode 16 and the light reflective layer 31 is set so as to enhance the intensity of light of a specific wavelength among the light converted in wavelength in the wavelength conversion layer 18.
  • “light of a specific wavelength” means light in the ultraviolet region to blue region (wavelength 250 nm to 400 nm) obtained by wavelength conversion of light in the green region to red region (wavelength 500 nm to 780 nm).
  • microcavity effects (multiple reflection interference effect) is expressed between the second electrode 16 is a reflective electrode (translucent electrode) and the light reflective layer 31 Furthermore, the light extraction efficiency can be improved. More specifically, by setting as the optical film thickness L 2 of the wavelength conversion layer 18 of the wavelength-converted light at a wavelength conversion layer 18, second electrode 16 face each other, between light reflective layer 31 Reflects repeatedly. At this time, the light in the ultraviolet region to the blue region is strengthened by the multiple interference and is emitted from the light reflective layer 31 to the respective fluorescence conversion layers 8R, 8G, and 8B.
  • the intensity of light in the ultraviolet region to the blue region incident on the fluorescence conversion layers 8R, 8G, and 8B is increased, and the fluorescence conversion is performed in the fluorescence conversion layers 8R, 8G, and 8B, and from the sealing substrate 9 side.
  • the amount of red, green, and blue light emitted increases.
  • the light extraction efficiency of the organic light emitting device 30 can be further improved, and the organic light emitting device 30 with good light emission efficiency can be obtained.
  • FIG. 8 is a schematic cross-sectional view showing an example of an organic light-emitting device according to the third embodiment of the present invention.
  • 8 includes a substrate 1, an organic EL light emitting unit (light source) 10, a sealing substrate 9, a red color filter 41R, a green color filter 41G, a blue color filter 41B, and a fluorescence conversion layer 8R.
  • the green fluorescence conversion layer 8G, the blue fluorescence conversion layer 8B, and the wavelength conversion layer 18 are schematically configured.
  • the substrate 1 includes a TFT (Thin Film Transistor) circuit 2.
  • the organic EL light emitting unit (light source) 10 is provided on the substrate 1 with the interlayer insulating film 3 and the planarizing film 4 interposed therebetween.
  • the red color filter 41 ⁇ / b> R, the green color filter 41 ⁇ / b> G, and the blue color filter 41 ⁇ / b> B are color filters that are partitioned by the black matrix 7 and arranged in parallel on one surface of the sealing substrate 9.
  • the fluorescence conversion layer 8R, the green fluorescence conversion layer 8G, and the blue fluorescence conversion layer 8B are partitioned into the black matrix 7 by matching colors on the color filters 41R, 41G, and 41B formed on one surface of the sealing substrate 9. Are arranged in parallel.
  • the wavelength conversion layer 18 is disposed between the organic EL light emitting unit 10 and each of the fluorescence conversion layers 8R, 8G, and 8B.
  • the substrate 1 and the sealing substrate 9 are disposed so that the organic EL light emitting unit 10 and the fluorescence conversion layers 8R, 8G, and 8B face each other with the sealing material 6 and the wavelength conversion layer 18 interposed therebetween.
  • the organic EL light emitting unit 10 and the wavelength conversion layer 18 are covered with the inorganic sealing film 5.
  • an organic EL layer (organic layer) 17 is sandwiched between the first electrode 12 and the second electrode 16.
  • the organic EL layer (organic layer) 17 is a stack of a hole transport layer 13, a light emitting layer 14, and an electron transport layer 15.
  • a reflective electrode 11 is formed on the lower surface of the first electrode 12.
  • the reflective electrode 11 and the first electrode 12 are connected to one of the TFT circuits 2 by a wiring 2 b provided through the interlayer insulating film 3 and the planarizing film 4.
  • the second electrode 16 is connected to one of the TFT circuits 2 by a wiring 2 a provided through the interlayer insulating film 3, the planarizing film 4 and the edge cover 19.
  • the same components as those of the organic light emitting devices 20 and 20B of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the organic light emitting device 40 of the present embodiment includes a red fluorescence conversion layer 8R, a green fluorescence conversion layer 8G, a blue fluorescence conversion layer 8B, and a sealing substrate 9.
  • Color filters 41R, 41G, and 41B are interposed therebetween.
  • the color filters 41R, 41G, and 41B are formed on the light extraction side (sealing substrate 9 side) corresponding to the color of light emitted from the fluorescence conversion layers 8R, 8G, and 8B.
  • a red color filter 41R is provided on the fluorescence emission side of the red fluorescence conversion layer 8R.
  • a green color filter 41G is provided on the fluorescence emission side of the green fluorescence conversion layer 8G.
  • a blue color filter 41B is provided on the fluorescence emission side of the blue fluorescence conversion layer 8B.
  • the color filters 41R, 41G, and 41B are not particularly limited, and conventionally known color filters can be used.
  • the color filters 41R, 41G, and 41B can be formed by a conventionally known method, and the film thickness can be adjusted as appropriate.
  • the color filters 41R, 41G, 41B between the sealing substrate 9 on the light extraction side (observer side) and the fluorescence conversion layers 8R, 8G, 8B, the light is emitted from the organic light emitting element 40.
  • the color purity of red, green, and blue can be increased, and the color reproduction range of the organic light emitting element 40 can be expanded.
  • the red color filter 41R formed on the red fluorescence conversion layer 8R and the green color filter 41G formed on the green fluorescence conversion layer 8G absorb the blue component and the ultraviolet component of external light. Therefore, it is possible to reduce or prevent light emission of the fluorescence conversion layers 8R and 8G due to external light, and it is possible to reduce or prevent a decrease in contrast.
  • FIG. 8 shows an example in which the blue color filter 41B is provided on the blue fluorescence conversion layer 8B as a pixel emitting blue
  • the present embodiment is not limited to this.
  • the blue fluorescence conversion layer 8B can be omitted.
  • the functional layer described in the first embodiment may be provided.
  • FIG. 9 is a schematic cross-sectional view showing an example of an organic light-emitting device according to the fourth embodiment of the present invention.
  • the organic light emitting device 50 shown in FIG. 9 includes an organic EL light emitting unit (light source) 10, a wavelength conversion layer 18, a light reflective layer 31, a sealing material 6, a fluorescence conversion layer 51, and a sealing substrate 9. It is roughly composed.
  • the organic EL light emitting unit (light source) 10 is provided on the substrate 1.
  • the wavelength conversion layer 18 is provided on the organic EL light emitting unit 10.
  • the light reflective layer 31 is provided on the wavelength conversion layer 18.
  • the sealing material 6 is provided on the light reflective layer 31.
  • the fluorescence conversion layer 51 is provided on the sealing material 6.
  • the sealing substrate 9 is provided on the fluorescence conversion layer 51.
  • the organic EL light emitting unit 10 is configured by an organic EL layer (organic layer) 17 sandwiched between a first electrode 12 and a second electrode 16.
  • the same components as those of the organic light emitting devices 20, 20B, 30, 40 of the first to third embodiments are denoted by the same reference numerals, and the description thereof is omitted.
  • the organic light emitting device 50 shown in FIG. 9 differs from the first to third embodiments in that a single fluorescence conversion layer 51 is disposed instead of the three fluorescence conversion layers 8R, 8G, and 8B. Is different in that it is.
  • the fluorescence conversion layer 51 may be any of the fluorescence conversion layers 8R, 8G, and 8B described in the first embodiment, and can be appropriately changed according to the wavelength region (color) of light that is desired to be emitted from the sealing substrate 9. .
  • the light in the green region to the red region emitted from the organic EL light emitting unit 10 that is a light source is wavelength-converted by the wavelength conversion layer 18 to obtain an ultraviolet region to a blue region.
  • the red fluorescence conversion layer 8R is disposed as the fluorescence conversion layer 51
  • red light is emitted to the sealing substrate 9 side.
  • the green fluorescence conversion layer 8G is arranged as the fluorescence conversion layer 51
  • green light is emitted to the sealing substrate 9 side.
  • the blue fluorescence conversion layer 8B is arranged as the fluorescence conversion layer 51, blue light is emitted to the sealing substrate 9 side.
  • the organic light emitting device 50 includes the light reflecting layer 31 disposed on the light extraction side of the wavelength conversion layer 18, so that the wavelength conversion layer 18 converts the wavelength as described above in the second embodiment. Since the emitted light is amplified by the microcavity effect, it can also function as an organic laser element.
  • FIG. 10 is a schematic configuration diagram illustrating an example of an organic laser 60 using the organic light emitting device 50 of the present embodiment as an organic laser device.
  • An organic laser 60 shown in FIG. 10 is roughly composed of a pencil-type main body 66, a condenser lens 65, a light emitting circuit 63, an organic light emitting element 50, a booster circuit 62, a battery 61, and a lighting switch 64. Yes.
  • the condenser lens 65 is disposed inside the distal end portion of the main body 66.
  • the light emitting circuit 63 is arranged in the central portion inside the main body 66.
  • the organic light emitting element 50 is an organic laser element disposed between the light emitting circuit 63 and the condenser lens 66.
  • the booster circuit 62 is sequentially arranged in the rear part of the light emitting circuit 63 along the longitudinal direction of the main body 66.
  • the lighting switch 64 is disposed on the outer periphery of the main body 66 so as to be electrically connected to the light emitting circuit 63.
  • the organic light emitting element (organic laser element) 50, the light emitting circuit 63, the booster circuit 62, and the battery 61 are electrically connected by wiring. By operating the lighting switch 64, the voltage from the battery 61 is boosted by the booster circuit 62, and the first electrode 12 and the second electrode 16 of the organic light emitting element (organic laser element) 50 are energized via the light emitting circuit 63.
  • the organic EL light emitting unit 10 can emit light, and laser light can be emitted from the organic light emitting element (organic laser element) 50.
  • the light emitted from the organic light emitting element (organic laser element) 50 is condensed by the condenser lens 65 and emitted to the outside of the main body 66.
  • the organic light emitting device 50 of the present embodiment can be applied to an organic laser, a laser pointer, etc. by using it as an organic laser device as in the example shown in FIG.
  • the organic light emitting element which is 1 aspect of this invention is not limited to said embodiment.
  • a diffusion plate may be disposed on the light extraction side of the color filter.
  • a method for driving the organic EL light-emitting portion is not particularly limited, and an active driving method or a passive driving method may be used.
  • the organic EL light emitting unit is preferably driven by an active driving method.
  • the organic light-emitting element which is one embodiment of the present invention has a structure in which light is extracted from the reverse method of the substrate on which the active element is formed, thereby ignoring the TFT circuit, the wiring, and the like so as to have a high aperture ratio. Is possible.
  • An organic light-emitting device which is one embodiment of the present invention includes the above-described organic light-emitting element which is one embodiment of the present invention and a drive unit which drives the organic EL light-emitting portion of the organic light-emitting element which is one embodiment of the present invention.
  • FIG. 11 shows an example of a wiring structure of an organic light-emitting device including the organic light-emitting element 20 of the first embodiment and a drive unit, and a drive circuit connection configuration.
  • scanning lines 101 and signal lines 102 are wired in a matrix in a plan view with respect to the substrate 1 of the organic light emitting element 20.
  • Each scanning line 101 is connected to a scanning circuit 103 provided on one side edge of the substrate 1.
  • Each signal line 102 is connected to a video signal driving circuit 104 provided at the other side edge of the substrate 1.
  • a driving element such as a thin film transistor is incorporated in each of the intersections between the scanning line 101 and the signal line 102, and a pixel electrode is connected to each driving element.
  • These pixel electrodes correspond to the reflective electrodes 11 of the organic light emitting element 20 having the structure shown in FIG. 1, and these reflective electrodes 11 correspond to the first electrodes 12.
  • the scanning circuit 103 and the video signal driving circuit 104 are electrically connected to the controller 105 via control lines 106, 107, and 108. The operation of the controller 105 is controlled by the central processing unit 109.
  • a power supply circuit 112 is connected to the scanning circuit 103 and the video signal driving circuit 104 via power supply wirings 110 and 111 separately.
  • a drive unit that drives the organic EL light emitting unit 10 of the organic light emitting element 20 includes a scanning line 101, a signal line 102, a scanning circuit 103, and a video signal driving circuit 104.
  • a TFT circuit 2 of the organic light emitting element 20 shown in FIG. 1 is incorporated in each region partitioned by the scanning line 101 and the signal line 102.
  • the light emitting unit 10 can emit light, and visible region light can be emitted from the corresponding pixel, so that a desired color or image can be displayed.
  • the organic light emitting device of the present embodiment the case where the organic light emitting element 20 of the first embodiment is provided is illustrated, but the present embodiment is not limited thereto, and any organic light emitting element according to the present invention described above may be used. Either can be suitably provided.
  • the organic light-emitting device which is one embodiment of the present invention is a high-efficiency (high luminance) organic light-emitting device by including the above-described organic light-emitting element which is one embodiment of the present invention.
  • an organic EL light-emitting unit in which at least one organic layer including a light-emitting layer is sandwiched between a pair of electrodes, and a fluorescence conversion layer that converts incident light into fluorescence.
  • a wavelength conversion layer that converts the wavelength of the light emitted from the organic EL light emitting unit and emits the light to the fluorescence conversion layer side, and converts the wavelength of the light emitted from the organic EL light emitting unit to the wavelength conversion The light is converted by the layer, and the converted light is fluorescently converted by the fluorescence conversion layer to generate visible light.
  • the organic EL light emitting part, the fluorescence conversion layer, and the wavelength conversion layer in the color conversion method of the present embodiment As the organic EL light emitting part, the fluorescence conversion layer, and the wavelength conversion layer in the color conversion method of the present embodiment, the organic EL light emitting part, the fluorescence conversion layer, and the wavelength conversion layer mentioned in the organic light emitting element of the above embodiment are used. The same thing is mentioned.
  • the organic EL light emitting section is preferably provided with materials for the green region to the red region. Therefore, the organic EL light emitting part preferably emits light in the green region to red region.
  • the wavelength conversion layer converts the wavelength of light incident in the wavelength conversion layer into a half by using a second-order nonlinear optical effect such as second harmonic generation (SHG). Things.
  • the SHG wavelength conversion layer is placed between the organic EL light emitting part and the fluorescence conversion layer, and the light emitted from the organic EL light emitting part is incident on the wavelength conversion layer and emitted from the organic EL light emitting part to green.
  • the wavelength of the light in the region is converted to half and converted into light in the ultraviolet region to blue region.
  • Light in the visible region can be generated by making the light in the ultraviolet region to blue region incident on the fluorescence conversion layer and performing fluorescence conversion in the fluorescence conversion layer.
  • the wavelength conversion layer is preferably the same as the organic light emitting device 20 of the first embodiment. As shown in FIGS. 3A and 3B, it is preferable that a plurality of layers in which the polarization directions are alternately reversed are stacked. It is preferable that a plurality of layers are laminated so as to periodically invert the polarization of the crystal so as to have a polarization inversion period ⁇ (that is, for each coherent length Lc).
  • Examples of the wavelength conversion layer that is second harmonic generation (SHG) using QPM include a layer formed by laminating a plurality of layers in which polarization directions are alternately reversed. Specifically, as the wavelength conversion layer that is second harmonic generation (SHG) using QPM, each layer shown in FIG.
  • a laminated body 18A in which a plurality of inverted layers 18a and 18b are laminated is preferable.
  • a stacked body 18B configured by alternately stacking semiconductor layers 18c and dielectric layers 18d shown in FIG. 5 is preferable. Can be mentioned.
  • the wavelength conversion layer 18, the wavelength conversion layer (laminated body) 18 ⁇ / b> A, the material constituting the wavelength conversion layer (laminated body) 18 ⁇ / b> B, the film thickness of each layer, and the like are as follows. The same materials as those mentioned above can be mentioned.
  • a wavelength conversion layer is disposed between the organic EL light emitting unit and the fluorescence conversion layer, the wavelength of the light emitted from the organic EL light emitting unit is converted in the wavelength conversion layer, and the converted light is converted into light.
  • the light emitted from the organic EL light emitting unit is color-converted, and visible light can be emitted from the fluorescence conversion layer.
  • organic EL light emission is achieved by arranging a second harmonic generation (SHG) wavelength conversion layer having a QPM structure between the organic EL light emitting unit and the fluorescence conversion layer.
  • SHG second harmonic generation
  • the wavelength of the green to red light emitted from the light is converted to half in the wavelength conversion layer to make the light in the ultraviolet to blue region, and this converted light is incident on the fluorescence conversion layer and converted to fluorescence. By doing so, visible light can be generated.
  • an organic EL light emitting unit that emits light in a green region to a red region having luminance and lifetime superior to those of a blue light emitting material can be used as a light source. Since visible light can be generated by color-converting light from the part, visible light with excellent luminance and lifetime can be generated using the organic EL light-emitting part as a light source.
  • Example 1 An organic light emitting device 20 having the configuration shown in FIG. 1 was produced by the following procedure.
  • a reflective electrode was formed on a 0.7 mm thick glass substrate by a sputtering method so as to have a film thickness of 100 nm.
  • An indium-tin oxide (ITO) film was formed on the reflective electrode by sputtering so as to have a film thickness of 20 nm.
  • a reflective electrode (anode) was formed as the first electrode.
  • the first electrode was patterned into 90 stripes having a width of 2 mm by a conventional photolithography method.
  • SiO 2 was deposited to 200 nm on the first electrode by a sputtering method, and patterned to cover the edge portion of the first electrode by a conventional photolithography method to form an edge cover.
  • a short side of 10 ⁇ m from the end of the first electrode is covered with SiO 2 .
  • the dried substrate was fixed to a substrate holder in an inline type resistance heating vapor deposition apparatus, and the pressure was reduced to a vacuum of 1 ⁇ 10 ⁇ 4 Pa or less.
  • Each organic layer was formed.
  • 1,1-bis-di-4-tolylamino-phenyl-cyclohexane (TAPC) was used to form a hole injection layer having a thickness of 100 nm by resistance heating vapor deposition.
  • TAPC 1,1-bis-di-4-tolylamino-phenyl-cyclohexane
  • NPD N, N′-di-1-naphthyl-N, N′-diphenyl-1,1′-biphenyl-1,1′-biphenyl-4,4′-diamine
  • a hole transport layer having a film thickness of 40 nm was formed on the hole injection layer by resistance heating vapor deposition.
  • a red organic light emitting layer (thickness: 30 nm) was formed on the hole transport layer.
  • This red organic light-emitting layer comprises 1,4-bis-triphenylsilyl-benzene (UGH-2) (host material) and tris (1-phenylisoquinoline) iridium (III) Ir (pic) 3 ) (red phosphorescent dopant) ) At a deposition rate of 1.5 ⁇ / sec and 0.2 ⁇ / sec.
  • a hole blocking layer (thickness: 10 nm) was formed on the blue organic light emitting layer using 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and then tris.
  • An electron transport layer (thickness: 30 nm) was formed using (8-hydroxyquinoline) aluminum (Alq 3 ).
  • an electron injection layer (thickness: 0.5 nm) was formed on the electron transport layer using lithium fluoride (LiF).
  • a translucent electrode was formed as the second electrode.
  • the substrate formed up to the electron injection layer as described above was fixed to a metal vapor deposition chamber.
  • a shadow mask for forming the second electrode (a mask having an opening so that the second electrode can be formed in a stripe shape having a width of 2 mm in a direction opposite to the stripe of the first electrode produced above) and the electron injection layer
  • the formed substrate is aligned, and magnesium and silver are co-deposited on the surface of the electron injection layer by a vacuum deposition method at a deposition rate of 0.1 ⁇ / sec and 0.9 ⁇ / sec, respectively, to form magnesium silver in a desired pattern. Formation (thickness: 1 nm).
  • the second electrode was formed.
  • the produced organic EL light emitting part exhibits a microcavity effect between the reflective electrode (first electrode) and the semi-transmissive electrode (second electrode), and can increase the light intensity incident on the wavelength conversion layer. It was.
  • the transmittance of the semitransparent electrode was adjusted to 10%
  • the emission peak due to the microcavity effect (interference effect) was adjusted to 680 nm
  • the half-value width was adjusted to 10 nm.
  • wavelength conversion is performed by forming a BBO ( ⁇ -BaB 2 O 4 ) thin film on the second electrode of the organic EL light emitting part by laser pulse vapor deposition, and laminating 10 layers so as to alternately invert polarization.
  • a layer was formed.
  • Each layer formed a laminated film having a thickness of 1.7 ⁇ m and a period of 3.4 ⁇ m.
  • an inorganic sealing film made of 1 ⁇ m SiO 2 was patterned by plasma CVD from the edge of the display portion to a sealing area of 2 mm in the vertical and horizontal directions using a shadow mask.
  • an organic EL light emitting unit substrate was produced.
  • a red fluorescence conversion layer a green fluorescence conversion layer, and a blue fluorescence conversion layer were formed on a glass substrate having a thickness of 0.7 mm.
  • the red fluorescence conversion layer was formed by first adding 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane to 0.16 g of Aerosil (trade name, manufactured by Nippon Aerosil Co., Ltd.) having an average particle diameter of 5 nm at an open system room temperature For 1 hour. Next, the mixture after stirring and 20 g of red phosphor K 5 Eu 2.5 (WO 4 ) 6.25 were transferred to a mortar, thoroughly mixed, heated in an oven at 70 ° C.
  • the green fluorescence conversion layer is formed by first adding 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane to 0.16 g of aerosil (trade name, manufactured by Nippon Aerosil Co., Ltd.) having an average particle diameter of 5 nm at an open room temperature. For 1 hour. Next, the mixture after stirring and the green phosphor Ba 2 SiO 4 : Eu 2+ 20 g were transferred to a mortar, mixed well, heated in an oven at 70 ° C. for 2 hours, and further heated in an oven at 120 ° C. for 2 hours. The surface modified Ba 2 SiO 4 : Eu 2+ was obtained.
  • the blue fluorescent conversion layer is formed by first adding 15 g of ethanol and 0.22 g of ⁇ -glycidoxypropyltriethoxysilane to 0.16 g of aerosil (trade name, manufactured by Nippon Aerosil Co., Ltd.) having an average particle size of 5 nm at an open room temperature. For 1 hour. Next, the mixture after stirring and the blue phosphor BaMgAl 10 O 17 : Eu 2+ 20 g were transferred to a mortar, mixed well, heated in an oven at 70 ° C. for 2 hours, and further heated in an oven at 120 ° C. for 2 hours. The surface modified BaMgAl 10 O 17 : Eu 2+ was obtained.
  • the organic EL light emitting unit substrate and the fluorescence conversion layer substrate produced as described above were aligned using an alignment marker formed outside the display unit.
  • a thermosetting resin was applied to the fluorescence conversion layer substrate in advance, and both substrates were brought into close contact with each other through the thermosetting resin, and cured by heating at 90 ° C. for 2 hours.
  • the bonding process of both the substrates was performed in a dry air environment (water content: ⁇ 80 ° C.) for the purpose of preventing the organic EL light emitting portion from being deteriorated by water.
  • an organic light emitting device was manufactured by connecting terminals formed in the periphery to an external power source.
  • a desired good image could be obtained by applying a desired current to the desired stripe-shaped electrode from an external power source to the produced organic light emitting device. From this result, according to the organic light-emitting element which is one embodiment of the present invention, it is possible to obtain the desired good by using the existing red phosphorescent light emitting material without using the blue light emitting material such as the blue phosphorescent material under development. It was confirmed that a simple pixel can be obtained.
  • Example 2 An organic light emitting device 20 having the configuration shown in FIG. 1 was produced.
  • the organic light emitting device of Example 2 is different from Example 1 in that the wavelength conversion layer 18B shown in FIG. 5 is used as the wavelength conversion layer.
  • the wavelength conversion layer is formed by using an Ar ion beam sputtering method on the second electrode of the organic EL light emitting portion, a ZnO layer 50 nm as an SHG active semiconductor layer and a TiO 2 layer 25 nm as an SHG inactive dielectric layer. By alternately forming a total of 10 layers.
  • a desired good image could be obtained by applying a desired current to the desired stripe electrode from an external power source to the produced organic light emitting device.
  • a desired good pixel can be obtained by using an existing green phosphorescent light emitting material without using a blue light emitting material such as a developing blue phosphorescent material. It was confirmed that it can be obtained.
  • Example 3 An organic light emitting device 30 having the configuration shown in FIG. 7 was produced.
  • the organic light emitting device of Example 3 is different from Example 1 in that 1,3,5-tris [4- (diphenylamino) phenyl] benzene (TDAPB) is emitted as the host material of the light emitting layer of the organic EL light emitting part.
  • TDAPB 1,3,5-tris [4- (diphenylamino) phenyl] benzene
  • fac-tris (2-phenylpyridine) iridium (III) [Ir (ppy) 3 ] that emits green phosphorescence was used, the microcavity effect was that the emission peak was adjusted to 580 nm, and A light reflective layer (thickness 0.05 ⁇ m, transmittance 5%) is formed on the emission side surface of the wavelength conversion layer by vapor deposition, and is paired with the second electrode (semi-transmissive cathode) of the organic EL light emitting unit. This is a point provided with a microcavity effect of light (wavelength 290 nm) converted by the wavelength conversion layer.
  • a desired good image could be obtained by applying a desired current to the desired stripe electrode from an external power source to the produced organic light emitting device. From this result, according to the organic light-emitting element which is one embodiment of the present invention, it is possible to obtain the desired good by using the existing red phosphorescent light emitting material without using the blue light emitting material such as the blue phosphorescent material under development. It was confirmed that a simple pixel can be obtained. Further, due to the microcavity effect of the wavelength-converted light, the fluorescence conversion layer was irradiated with strong light, so that the luminance increased by 5% compared to Example 1.
  • Example 4 An organic light emitting device 50 having the configuration shown in FIG. 9 was produced.
  • the organic light emitting device of Example 4 is different from Example 1 in that the three-color fluorescence conversion layer is not used and only the green fluorescence conversion layer is provided. Further, the organic light emitting device of Example 4 is different from Example 1 in the same manner as in Example 3.
  • the light reflective layer (thickness 0.1 ⁇ m, transmittance 1%) is also provided on the emission side of the wavelength conversion layer. And having a microcavity effect of light (wavelength 340 nm) converted by the wavelength conversion layer as a pair with the second electrode (semi-transmissive cathode) of the organic EL light emitting unit.
  • green light having a large directivity having a wavelength of 540 nm and a half width of 3 nm was obtained.
  • green directivity can be obtained by using an existing phosphorescent light-emitting material without using a blue light-emitting material such as a blue phosphorescent material under development. High light was able to be obtained.
  • a simple organic laser pointer as shown in FIG. 10 could be obtained using the organic light emitting device prepared in Example 4.
  • High-efficiency (high brightness) organic light-emitting elements organic light-emitting elements, organic light-emitting devices, and color conversion methods can be provided.

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  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention se rapporte à un élément électroluminescent organique qui comprend : une unité électroluminescente (EL) organique qui contient au moins une couche organique comprenant une couche électroluminescente et une paire d'électrodes qui prennent en sandwich la couche organique ; une couche de conversion de fluorescence qui est agencée côté extraction de la lumière de l'unité électroluminescente (EL) organique et qui effectue une conversion de fluorescence de la lumière incidente ; et une couche de conversion de longueur d'onde qui est agencée entre l'unité électroluminescente (EL) organique et la couche de conversion de fluorescence, qui convertit la longueur d'onde de la lumière émise depuis l'unité électroluminescente (EL) organique et, ensuite, qui renvoie la lumière résultante vers le côté couche de conversion de fluorescence.
PCT/JP2011/064392 2010-08-04 2011-06-23 Elément électroluminescent organique, dispositif électroluminescent organique et procédé de conversion de couleur Ceased WO2012017751A1 (fr)

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JP2020068380A (ja) * 2018-10-23 2020-04-30 ユニバーサル ディスプレイ コーポレイション 深いｈｏｍｏ（最高被占分子軌道）発光体デバイス構造
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CN111244141A (zh) * 2014-05-30 2020-06-05 株式会社半导体能源研究所 发光装置、显示装置及电子设备
CN112051694A (zh) * 2019-06-07 2020-12-08 松下知识产权经营株式会社 波长转换装置
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CN111092101B (zh) * 2018-10-24 2022-10-04 群创光电股份有限公司 显示装置
CN112051694A (zh) * 2019-06-07 2020-12-08 松下知识产权经营株式会社 波长转换装置
CN112057745A (zh) * 2019-06-11 2020-12-11 乐金显示有限公司 用于皮肤管理或皮肤治疗的电子装置
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