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WO2012011774A3 - 은 나노와이어의 제조방법 - Google Patents

은 나노와이어의 제조방법 Download PDF

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Publication number
WO2012011774A3
WO2012011774A3 PCT/KR2011/005426 KR2011005426W WO2012011774A3 WO 2012011774 A3 WO2012011774 A3 WO 2012011774A3 KR 2011005426 W KR2011005426 W KR 2011005426W WO 2012011774 A3 WO2012011774 A3 WO 2012011774A3
Authority
WO
WIPO (PCT)
Prior art keywords
silver
nanowires
present
silver nanowires
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/005426
Other languages
English (en)
French (fr)
Other versions
WO2012011774A9 (ko
WO2012011774A2 (ko
Inventor
김상호
문석식
배창완
서동민
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Academic Cooperation Foundation of Kongju National University
Nanotech and Beyond Co Ltd
Industry and Academy Cooperation In Chungnam National University
Original Assignee
Industry Academic Cooperation Foundation of Kongju National University
Nanotech and Beyond Co Ltd
Industry and Academy Cooperation In Chungnam National University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industry Academic Cooperation Foundation of Kongju National University, Nanotech and Beyond Co Ltd, Industry and Academy Cooperation In Chungnam National University filed Critical Industry Academic Cooperation Foundation of Kongju National University
Priority to US13/811,342 priority Critical patent/US9636746B2/en
Priority to CN201180045971.2A priority patent/CN103153844B/zh
Priority claimed from KR1020110072762A external-priority patent/KR101307973B1/ko
Priority claimed from KR1020110072756A external-priority patent/KR101307967B1/ko
Publication of WO2012011774A2 publication Critical patent/WO2012011774A2/ko
Publication of WO2012011774A9 publication Critical patent/WO2012011774A9/ko
Publication of WO2012011774A3 publication Critical patent/WO2012011774A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/14—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions the crystallising materials being formed by chemical reactions in the solution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0547—Nanofibres or nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)

Abstract

본 발명의 제조방법은 은염; 수용성 고분자; 계면활성제 또는 표준환원전위가 -0.1 내지 -0.9V인 금속 이온의 할로겐화물인 금속촉매; 및 환원성 용매;를 함유하는 전구체용액을 가열하여 Ag 나노와이어를 제조하는 특징이 있으며, 나노와이어의 합성 시간이 극히 단축되는 효과가 있으며, 미반응되어 버려지는 은전구체의 양을 효과적으로 억제하여 높은 효율로 은 나노와이어가 제조되고, 단순 스케일업에 의해 은 나노와이어를 대량 생산할 수 있다.
PCT/KR2011/005426 2010-07-22 2011-07-22 은 나노와이어의 제조방법 Ceased WO2012011774A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/811,342 US9636746B2 (en) 2010-07-22 2011-07-22 Method for manufacturing silver nanowires
CN201180045971.2A CN103153844B (zh) 2010-07-22 2011-07-22 生产银纳米线的方法

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR10-2010-0070889 2010-07-22
KR20100070886 2010-07-22
KR20100070889 2010-07-22
KR10-2010-0070886 2010-07-22
KR10-2011-0072756 2011-07-22
KR1020110072762A KR101307973B1 (ko) 2010-07-22 2011-07-22 금속 촉매를 이용한 은 나노와이어의 제조방법
KR1020110072756A KR101307967B1 (ko) 2010-07-22 2011-07-22 은 나노와이어의 제조방법
KR10-2011-0072762 2011-07-22

Publications (3)

Publication Number Publication Date
WO2012011774A2 WO2012011774A2 (ko) 2012-01-26
WO2012011774A9 WO2012011774A9 (ko) 2012-04-12
WO2012011774A3 true WO2012011774A3 (ko) 2012-05-31

Family

ID=45497319

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/005426 Ceased WO2012011774A2 (ko) 2010-07-22 2011-07-22 은 나노와이어의 제조방법

Country Status (4)

Country Link
US (1) US9636746B2 (ko)
CN (1) CN103153844B (ko)
TW (1) TWI458686B (ko)
WO (1) WO2012011774A2 (ko)

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CN102692405B (zh) * 2012-06-07 2015-05-27 中国科学院合肥物质科学研究院 米粒状氟化物/银复合纳米材料、制备方法及应用
EP2900409B1 (en) 2012-09-27 2019-05-22 Rhodia Operations Process for making silver nanostructures and copolymer useful in such process
KR101448361B1 (ko) * 2012-12-14 2014-10-14 인스콘테크(주) 공중합물 캡핑제를 이용한 은 나노와이어 제조방법
TWI490494B (zh) * 2013-02-08 2015-07-01 Ind Tech Res Inst Biological detection sheet containing nanometer silver wire composition and method for making the same
US10020807B2 (en) * 2013-02-26 2018-07-10 C3Nano Inc. Fused metal nanostructured networks, fusing solutions with reducing agents and methods for forming metal networks
KR101554927B1 (ko) 2014-07-21 2015-09-22 주식회사 에이든 은 나노와이어 제조방법 및 이를 이용한 투명전극
CN104209538B (zh) * 2014-09-02 2016-09-07 北京化工大学 一种在水相介质中制备纳米银线的方法
DE102015013219A1 (de) * 2014-10-28 2016-04-28 Dow Global Technologies Llc Verfahren zur Herstellung von Silber-Nanodrähten
DE102015013220A1 (de) * 2014-10-28 2016-04-28 Dow Global Technologies Llc Verfahren zur Herstellung von Silber-Nanodrähten
DE102015013239A1 (de) * 2014-10-28 2016-04-28 Dow Global Technologies Llc Hydrothermalverfahren zur Herstellung von Silber-Nanodrähten
CN106345997A (zh) * 2016-09-30 2017-01-25 天津宝兴威科技有限公司 一种形貌均一的超细银纳米线及其制备方法
CN106270551A (zh) * 2016-09-30 2017-01-04 天津宝兴威科技有限公司 一种长度为25μm纳米银线的合成方法
CN106493383A (zh) * 2016-09-30 2017-03-15 天津宝兴威科技有限公司 一种长度为30μm纳米银线的合成方法
US20190240735A1 (en) * 2016-10-25 2019-08-08 Dowa Electronics Materials Co., Ltd. Method for producing silver nanowires
CN107199114B (zh) * 2017-05-22 2019-04-19 哈尔滨工业大学 制备银纳米线透明电极的选择性去除不均匀短线的方法
EP3703886A4 (en) * 2017-11-04 2021-05-05 Sona Nanotech METAL NANOPARTICLES AND METHOD FOR MANUFACTURING THEREOF
US10714230B2 (en) * 2017-12-06 2020-07-14 C3Nano Inc. Thin and uniform silver nanowires, method of synthesis and transparent conductive films formed from the nanowires
CN108538498A (zh) * 2018-04-04 2018-09-14 苏州尤林斯新材料科技有限公司 一种用于制备导电薄膜的银纳米线悬浊溶液的制备工艺
CN108555310A (zh) * 2018-04-04 2018-09-21 苏州尤林斯新材料科技有限公司 一种银纳米线悬浊溶液的配制方法
CN109676150B (zh) * 2019-01-16 2021-12-24 中山大学 一种调控纳米银线长度的方法
CN110756822B (zh) * 2019-10-16 2022-05-20 西安工业大学 一种针形银纳米线及其制备方法
CN110983444A (zh) * 2019-11-05 2020-04-10 复旦大学 一种制备Ag-BHT单晶纳米线的方法
CN111804929A (zh) * 2020-06-30 2020-10-23 哈尔滨理工大学 一种水相制备Pt-Cu纳米片状合金的方法
CN114226748B (zh) * 2021-12-21 2023-10-24 深圳市华科创智技术有限公司 一种银纳米线的制备方法
WO2024162174A1 (ja) * 2023-01-30 2024-08-08 キヤノン株式会社 金ナノ粒子含有組成物、金ナノ粒子含有組成物分散液、インク、及びトナー

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Also Published As

Publication number Publication date
CN103153844A (zh) 2013-06-12
US9636746B2 (en) 2017-05-02
WO2012011774A9 (ko) 2012-04-12
CN103153844B (zh) 2015-11-25
TWI458686B (zh) 2014-11-01
TW201223877A (en) 2012-06-16
WO2012011774A2 (ko) 2012-01-26
US20130272919A1 (en) 2013-10-17

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