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WO2012011357A1 - Dispositif d'alimentation électrique - Google Patents

Dispositif d'alimentation électrique Download PDF

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Publication number
WO2012011357A1
WO2012011357A1 PCT/JP2011/064365 JP2011064365W WO2012011357A1 WO 2012011357 A1 WO2012011357 A1 WO 2012011357A1 JP 2011064365 W JP2011064365 W JP 2011064365W WO 2012011357 A1 WO2012011357 A1 WO 2012011357A1
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WIPO (PCT)
Prior art keywords
power supply
circuit
inductor
capacitor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/064365
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English (en)
Japanese (ja)
Inventor
野村　勝
竹史 塩見
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Sharp Corp
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Sharp Corp
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • the present invention relates to a step-up power supply device.
  • boost type power supply system that rectifies an AC voltage generated by an AC power supply to a DC voltage, or boosts a DC low voltage input from a DC power supply and the like and outputs it as a DC high voltage Also known as boost type).
  • the power supply circuit 50 may generate a low voltage generated by the power supply 51 if the step-up power supply circuit described in FIG.
  • the input voltage Vcc of the voltage is boosted and supplied to the load R50 as the output voltage Vo, and the inductor L50, the diode D50, the N channel MOSFET Q50, the control circuit 52, and the capacitor C50 are provided. doing.
  • the title of Fig. 3.1 in this non-patent document is "principle circuit of the step-down converter", this is clearly a typo and "principle circuit of the step-up converter”.
  • the diode D50 has a cathode connected to the other end of the inductor L50, and an anode connected to the positive side of the load R50 (the positive side of the output end of the output voltage Vo).
  • the drain is connected to the cathode of the diode D50, and the source is connected to the ground GND.
  • the control circuit 52 is connected to the gate of the MOSFET Q50.
  • the capacitor C50 is connected between the anode of the diode D50 and the ground GND.
  • the control circuit 52 controls the voltage input to the gate of the MOSFET Q50 to control the ON / OFF operation of the MOSFET Q50, and the output voltage Vo becomes a predetermined value boosted from the input voltage Vcc.
  • the MOSFET Q50 is caused to perform a switching operation that repeats the ON / OFF operation.
  • the voltage across the capacitor C50 is 0 V and the current flowing through the inductor L50 is 0 A (that is, no energy storage in either charge or magnetic flux). Then, first, with the power supply 51 connected to the power supply circuit 50, the MOSFET Q50 is turned on by the control circuit 52, a current flows from the power supply 51 in the order of the inductor L50 and the MOSFET Q50, and the electric energy of the power supply 51 is magnetically transferred to the inductor L50. It stores it as energy.
  • the inductor L50 tries to keep the current flowing in the direction immediately before the MOSFET Q50 is turned off. Therefore, the inductor L50 is negative on the power supply 51 side and positive on the diode D50 side. Generates a voltage having the polarity of The sum of this voltage and the input voltage Vcc of the power supply 51 is supplied as the output voltage Vo to the capacitor C50 and the load R50 via the diode D50.
  • the capacitor C50 supplies the charge stored in the on state of the MOSFET Q50, that is, the electric energy to the load R50, and stores the electric energy supplied via the diode D50 while the MOSFET Q50 is in the off state. , And smoothes the output voltage Vo.
  • the output voltage Vo supplied from the power supply circuit 50 to the capacitor C50 and the load R50 is obtained by adding the voltage generated by the inductor L50 to the input voltage Vcc of the power supply 51 while the MOSFET Q50 is off.
  • the power supply circuit 50 can supply the capacitor C50 and the load R50 with the output voltage Vo obtained by boosting the input voltage Vcc.
  • a high voltage equal to or higher than an expected predetermined value may be generated as the output voltage Vo.
  • the MOSFET Q50 is turned off, and thus the power supply 51 is connected to the power supply circuit 50 with the MOSFET Q50 turned off. It is common to apply Vcc.
  • the inductor L50 is inserted in the middle of the charging path from the power supply 51 to the capacitor C50.
  • so-called LC resonance which is sinusoidal vibration, occurs in the capacitor C50 and the inductor L50, and the capacitor C50 may be charged with a voltage exceeding the input voltage Vcc of the power supply 51.
  • simulation is performed to demonstrate that the above-described LC resonance occurs in the capacitor C50 and the inductor L50 using simulation software PSIM manufactured by PowerSIM.
  • the fourth simulation circuit performing the simulation is simplified by removing unnecessary elements before the start of the boosting operation by the power supply circuit 50. Specifically, before the start of the boosting operation by the power supply circuit 50, the MOSFET Q50 is turned off and thus removed as an unnecessary element. Further, the control circuit 52 for controlling the ON / OFF operation of the MOSFET Q50 is also removed as an unnecessary element. Then, it is assumed that the load R50 is sufficiently light and unloaded.
  • FIG. 13 shows the waveform of the current I1 flowing through the diode D50, and the lower part shows the waveform of the output voltage Vo (voltage across the capacitor C50), the waveform of the input voltage Vcc of the power supply 51, and the voltage V1 across the inductor L50.
  • the waveform of The voltage of the inductor L50 is indicated as a positive voltage when the diode D50 side becomes positive.
  • the output voltage Vo exceeds the input voltage Vcc and is close to the sum of the maximum voltage value of the voltage V1 across the inductor L50 and the input voltage Vcc of the power supply 51. Recognize.
  • the rise of the output voltage Vo is due to the LC resonance of the inductor L50 and the capacitor C50, and when the output voltage Vo rises completely, the reverse flow of the current from the capacitor C50 to the inductor L50 side is blocked by the action of the diode D50. It is considered that the output voltage Vo is maintained at a high voltage which has risen completely. With such a high output voltage Vo, the load R50 does not drop to a desired value until it consumes the electrical energy stored in the capacitor C50. Although the maximum voltage value of the output voltage Vo rises only to the input voltage Vcc if the inductance of the inductor L50 is 0 [ ⁇ H], this causes problems in the boosting operation. Also, if the capacitance of the capacitor C50 is a small value, it will be a fairly high value.
  • FIG. 15 shows a waveform obtained as a result of simulation with a fifth simulation circuit in which the diode D50 is removed from the fourth simulation circuit shown in FIG. 12 as shown in FIG.
  • the upper part of FIG. 15 shows the waveform of the current I3 flowing through the inductor L50.
  • the waveform obtained as a result of simulation in the sixth simulation circuit in which the diode D50 is returned to the fifth simulation circuit shown in FIG. 14 and 10 [ ⁇ ] is connected as the load R50 is shown. It is shown in FIG. Since the input voltage Vcc of the power supply 51 is 10 V, the load R 50 of 10 ⁇ flows a current of 1 A and consumes 10 W of power even when the boosting operation is not performed. Therefore, the output voltage Vo should fall below the input voltage Vcc when LC resonance does not occur. However, as shown in the lower part of FIG. 17, the output voltage Vo exceeds the input voltage Vcc for about 0.7 [ ⁇ s] due to LC resonance.
  • the input voltage Vcc of the power supply 51 is 10 V and the output voltage Vo is 12 V which the load R 50 requires or expects, even in the state where the load R 50 equivalent to 10 ⁇ is attached.
  • Overvoltage will be applied to the load R50 for several hundred [ ⁇ s].
  • the load R50 is a simple resistor, this overvoltage may be tolerated, but if the semiconductor having high sensitivity to excessive voltage and current, such as a LED (light emitting diode), etc. There is a risk of being destroyed.
  • the capacitor C50 and the diode D50 are also exposed to the high voltage due to the LC resonance, and an expensive high withstand voltage must be used.
  • a semiconductor switch is connected between the DC power supply and the resonance inductance, and the connection point of the semiconductor switch and the resonance inductance Are connected by a so-called free wheel (or flywheel) diode so as to be connected to ground GND in a reverse bias direction.
  • the capacitor charging device predicts and calculates the amount of charge of the energy storage capacitor to control the ON / OFF operation of the semiconductor switch, thereby suppressing LC resonance.
  • the capacitor charging apparatus has another semiconductor switch for boosting operation, and the control circuit controls each semiconductor switch.
  • an object of the present invention is to provide a power supply device in which the cost is reduced and the power conversion efficiency is improved.
  • a power supply device is a step-up power supply device, wherein an inductor whose one end is connected to an input end to which a DC input voltage is input, an output whose DC output voltage is output from the other end of the inductor A first backflow prevention element connected between the first end and the second end which can conduct only in a direction from the other end of the inductor to the output end, and between an upstream end of the first backflow prevention element and a reference potential A chopper circuit having a first switching element, a control circuit for controlling the first switching element, a capacitor connected between the downstream end of the first backflow preventing element and a reference potential, and the chopper circuit And a second reverse current blocking element that can conduct electricity only in a direction from the input end toward the output end, including an inductor, bypassing the input end and the output end without passing through the inductor of Includes a bypass circuit have a.
  • the capacitor when a DC input voltage is applied before the start of the boosting operation, the capacitor is charged via the bypass circuit, so that the current is prevented from flowing in the chopper circuit.
  • LC resonance is less likely to occur between the inductor and capacitor. Therefore, it is not necessary to use a component having a high withstand voltage corresponding to an overvoltage due to LC resonance as a component constituting the power supply device, and a versatile low-cost component can be used, and the cost can be reduced. Further, the load connected to the output end is not damaged by the overvoltage due to the LC resonance, and the safety and the reliability can be enhanced.
  • the switching operation of the first switching element is started, the step-up operation is started, and the DC output voltage exceeds the DC input voltage.
  • bypass circuit can be configured by inexpensive components, the cost can be reduced.
  • a bypass circuit that is energized only temporarily before the start of the boost operation, rather than connecting a current limiting element such as a resistor in series with the steady current path of the chopper circuit. Are configured. Therefore, the power loss due to the voltage drop of the element provided in this bypass circuit occurs only in the temporary period, and does not occur regularly, so the power conversion efficiency is lowered by providing the bypass circuit. Can be almost ignored.
  • the bypass circuit can minimize the flow of current to the inductor before the start of the boosting operation, the magnetic energy is not excessively accumulated in the inductor, and this excessive magnetic energy can be wasted as well. Power conversion efficiency can be improved.
  • the power supply device of the present invention is a step-up type power supply device, wherein an inductor whose one end is connected to an input end to which a DC input voltage is input; A first backflow prevention element connected between the output end to which an output voltage is output and conductive only in the direction from the other end of the inductor toward the output end, an upstream end of the first backflow prevention element, and a reference A chopper circuit having a first switching element connected between the electric potential and a control circuit for controlling the first switching element, and connected between a downstream end of the first backflow prevention element and a reference electric potential Capacitor, and a second switching element connected by bypass between the input end and the output end without passing through the inductor of the chopper circuit, and including an inductor, which is controlled by the control circuit Includes a bypass circuit have a.
  • the control circuit turns on the second switching element while the first switching element is not performing the switching operation, and while causing the first switching element to perform the switching operation, the control circuit perform
  • the second switching element of the bypass circuit is turned on when the DC input voltage is applied before the start of the boosting operation, which is before the switching operation by the first switching element. Since the capacitor is charged via the bypass circuit, current flow in the chopper circuit is suppressed, and LC resonance is less likely to occur between the inductor and capacitor of the chopper circuit. Therefore, it is not necessary to use a component having a high withstand voltage corresponding to an overvoltage due to LC resonance as a component constituting the power supply device, and a versatile low-cost component can be used, and the cost can be reduced. Further, the load connected to the output end is not damaged by the overvoltage due to the LC resonance, and the safety and the reliability can be enhanced.
  • the DC output voltage exceeds the DC input voltage.
  • the second switching element of the bypass circuit is turned off to prevent the reverse flow via the bypass circuit, thereby ensuring the boosting operation. Can be done.
  • bypass circuit can be configured by inexpensive components, the cost can be reduced.
  • a bypass circuit that is energized only temporarily before the start of the boost operation, rather than connecting a current limiting element such as a resistor in series with the steady current path of the chopper circuit. Are configured. Therefore, the power loss due to the voltage drop of the element provided in this bypass circuit occurs only in the temporary period, and does not occur regularly, so the power conversion efficiency is lowered by providing the bypass circuit. Can be almost ignored.
  • the bypass circuit can minimize the flow of current to the inductor before the start of the boosting operation, the magnetic energy is not excessively accumulated in the inductor, and this excessive magnetic energy can be wasted as well. Power conversion efficiency can be improved.
  • the second switching element is an element that allows current to flow in both directions when it is ON. Therefore, by stopping the switching operation of the first switching element and stopping the boosting operation, the electric energy of the capacitor can be returned to the input end via the bypass circuit by turning on the second switching element, and the input end When another load is connected to the capacitor, the electric energy returned from the capacitor can be used effectively.
  • the second switching element is a MOSFET including a second backflow prevention element capable of conducting only in a direction from the input end toward the output end.
  • the MOSFET is voltage control unlike the bipolar transistor, the power required for driving can be small.
  • the MOSFET includes the second backflow prevention element, if a DC input voltage is applied prior to the start of the boosting operation, which is before the switching operation by the first switching element, Even if the MOSFET is turned off without being turned on for some reason, the capacitor is charged via the second backflow prevention element, so that current flow in the chopper circuit is suppressed, and the inductor and capacitor of the chopper circuit LC resonance is less likely to occur.
  • the MOSFET including the second backflow prevention element in the bypass circuit it is possible to configure a fail-safe power supply device from the viewpoint of preventing generation of uncontrollable high voltage accompanying LC resonance.
  • the second switching element is a bipolar transistor, and the bypass circuit is connected in parallel to the second switching element, and can conduct only in the direction from the input end toward the output end. It may further have a prevention element.
  • the bipolar transistor and the second backflow prevention element are connected in parallel in the bypass circuit, the DC input voltage is temporarily input before the start of the boosting operation which is before the switching operation by the first switching element. Even if the bipolar transistor of the bypass circuit is turned off without being turned on for some reason when the voltage is applied, the capacitor is charged via the second backflow prevention element, so that current flows in the chopper circuit. As a result, LC resonance is less likely to occur between the inductor and capacitor of the chopper circuit.
  • a fail-safe power supply in view of preventing generation of uncontrollable high voltage caused by LC resonance as well. it can.
  • a current limiting element is further connected in series to the bypass circuit. According to this, it is possible to prevent the current flowing when charging the capacitor via the bypass circuit from becoming excessive and damaging the second backflow prevention element and the power supply connected to the input terminal.
  • the time constant of the resistance component of the bypass circuit and the capacitance of the capacitor is the resistance component of the chopper circuit in the state where the first switching element is not performing the switching operation by the control circuit, and It is preferable that the time constant with the capacitance of the capacitor (specifically, the time constant determined by the equivalent resistance of the inductor and the first backflow prevention element forming the chopper circuit and the capacitor) or less. According to this, the charging speed of the capacitor via the bypass circuit can be faster than charging the capacitor via the chopper circuit, and LC resonance can be less likely to occur.
  • bypass circuit can be configured by inexpensive components, the cost can be reduced.
  • a bypass circuit is configured instead of connecting current limiting elements such as resistors in series. Therefore, the power loss due to the voltage drop of the element provided in this bypass circuit is only generated temporarily and not regularly, so the decrease in the power conversion efficiency due to the provision of the bypass circuit is substantially ignored. can do.
  • the bypass circuit can minimize the flow of current to the inductor before the start of the boosting operation, the magnetic energy is not excessively accumulated in the inductor, and this excessive magnetic energy can be wasted as well. Power conversion efficiency can be improved.
  • FIG. 1 is a circuit diagram of a power supply circuit according to a first embodiment of the present invention.
  • FIG. 1 is a first simulation circuit diagram of a power supply circuit according to a first embodiment of the present invention.
  • FIG. 5 is a waveform diagram in the first simulation circuit diagram of FIG. 2; It is a 2nd simulation circuit diagram of the power supply circuit concerning a 1st embodiment of the present invention.
  • FIG. 5 is a waveform diagram in a second simulation circuit diagram of FIG. 4; It is a circuit diagram of a power supply circuit concerning a 2nd embodiment of the present invention.
  • FIG. 7 is a peripheral circuit diagram of a MOSFET arranged in the bypass path of FIG.
  • FIG. 6 It is a 3rd simulation circuit diagram of the power supply circuit concerning a 2nd embodiment of the present invention. It is a wave form diagram in the 3rd simulation circuit diagram of FIG.
  • FIG. 8 is a peripheral circuit diagram of a transistor when it is configured by a transistor instead of the MOSFET arranged in the bypass path of FIG. 7.
  • It is a circuit diagram of the power supply circuit in a prior art example. It is a 4th simulation circuit diagram of the power supply circuit in a prior art example. It is a wave form diagram in the 4th simulation circuit diagram of FIG. It is a 5th simulation circuit diagram of the power supply circuit in a prior art example. It is a wave form diagram in the 5th simulation circuit diagram of FIG. It is a 6th simulation circuit diagram of the power supply circuit in a prior art example.
  • FIG. 17 is a waveform diagram in a sixth simulation circuit diagram of FIG. 16;
  • FIG. 1 is a circuit diagram of a power supply circuit according to a first embodiment of the present invention.
  • the power supply circuit 10 boosts the low voltage input voltage Vcc generated by the power supply 11 and supplies it as the high voltage output voltage Vo to the load R10.
  • Two diodes D10 first backflow prevention element
  • D11 second backflow prevention element
  • N channel type MOSFET Q10 first switching element
  • control circuit 12 capacitor C10, resistance R11 (current And a limiting element).
  • the inductor L10 is connected to the positive side of the power supply 11.
  • the cathode of the diode D10 is connected to the other end of the inductor L10, and the anode is connected to the positive side of the load R10 (the positive side of the output end of the output voltage Vo).
  • the drain of the MOSFET Q10 is connected to the cathode of the diode D10, and the source is connected to the ground GND (reference potential).
  • the control circuit 12 is connected to the gate of the MOSFET Q10.
  • the capacitor C10 is connected between the anode of the diode D10 and the ground GND.
  • the cathode of the diode D11 is connected to one end of the inductor L10.
  • the resistor R11 is connected to the anode of the diode D11 and the positive side of the load R10.
  • the path connecting the positive side of the power supply 11 and the positive side of the load R10 is the main path 15 in which the inductor L10 and the diode D10 are connected in series, the diode D11 branched with respect to the main path 15, and the resistor R11 consists of two paths of the bypass path 16 connected in series.
  • the bypass path 16 in the present embodiment and the diode D11 and the resistor R11 provided in the bypass path 16 correspond to the bypass circuit in the present invention.
  • control circuit 12 controls the voltage input to the gate of the MOSFET Q10 to control the ON / OFF operation of the MOSFET Q10, and the MOSFET Q10 is turned on / off so that the output voltage Vo becomes a predetermined value.
  • the switching operation to repeat the OFF operation is performed.
  • the boosting operation by the power supply circuit 10 is performed as follows. (1) First, the input voltage Vcc is applied to the power supply circuit 10 from the power supply 11. The application of the input voltage Vcc to the power supply circuit 10 includes the case where the always-on power supply 11 is connected to the power supply circuit 10 and the case where the off power supply 11 is connected to the power supply circuit 10 and then turned on. At this time, no voltage is applied to the gate of the MOSFET Q10 by the control circuit 12, and the MOSFET Q10 is turned off.
  • the charging of the capacitor C10 via the bypass path 16 causes the voltage across the capacitor C10 to rapidly approach the input voltage Vcc of the power supply 11.
  • the voltage across both ends of the main path 15 in which the inductor L10 and the diode D10 are connected in series becomes almost the input voltage Vcc, and the difference from the voltage across the capacitor C10 becomes small, so the charge from the inductor L10 and the diode D10 is small.
  • the current (the amount of change in magnetic flux) flowing through the inductor L10 also decreases.
  • LC resonance in the inductor L10 and the capacitor C10 does not occur or remains very weak.
  • control circuit 12 performs switching control of the MOSFET Q10 to start the boosting operation, it suppresses that the output voltage Vo of the power supply circuit 10 becomes an overvoltage exceeding the input voltage Vcc, and LC resonance occurs. It can be reduced to a value equal to or near the input voltage Vcc.
  • the capacitor C10 is preceded by the bypass path 16 before the LC resonance due to the inductor L10 and the capacitor C10 occurs in the power supply circuit 10 at the time of transient response such as the initial state of voltage application of the power supply 11.
  • the output voltage Vo is prevented from becoming an overvoltage exceeding the input voltage Vcc of the power supply 11.
  • the reason for providing the diode D11 in the bypass path 16 is that, as described above, when the control circuit 12 and the MOSFET Q10 are driven after charging the capacitor C10 and the boosting operation is started, the voltage across the capacitor C10, ie, The output voltage Vo exceeds the input voltage Vcc of the power supply 11. In this case, the current is prevented from flowing back from the capacitor C10 to the power supply 11.
  • the output voltage Vo is connected via the input voltage Vcc of the power supply 11 and the resistor R11, but the resistor R11 is a necessary minimum as will be described later. In view of the fact that the output voltage Vo and the input voltage Vcc are substantially short-circuited, the boosting operation is disturbed. As described above, by using the diode D11 as the backflow prevention element, it is possible to prevent the backflow of the current through the bypass path 16 inexpensively and easily, and to prevent the trouble in the boosting operation.
  • the resistor R11 limits the current in order to prevent damage to the diode D11 or the power supply 11 due to excessive current when charging the capacitor C10. If the diode D11 is not provided in the bypass path 16 by increasing the resistance value of the resistor R11, the short circuit between the output voltage Vo and the input voltage Vcc of the power supply 11 is prevented as described above. Although this is possible, it deviates from the viewpoint of rapidly supplying current to the capacitor C10, which is the original purpose of the bypass path 16, and charging quickly. That is, the resistor R11 preferably has a minimum resistance that can prevent the diode D11 or the power supply 11 from being damaged.
  • FIG. 2 is a first simulation circuit diagram of the power supply circuit according to the first embodiment of the present invention.
  • FIG. 3 is a waveform diagram in the first simulation circuit diagram of FIG.
  • the first simulation circuit that carries out the simulation removes unnecessary elements before the start of the boosting operation by the power supply circuit 10. Specifically, before the start of the boosting operation by the power supply circuit 10, the MOSFET Q10 is in the OFF state and is removed because it is unnecessary. Further, the control circuit 12 for controlling the MOSFET Q10 is also removed because it is unnecessary.
  • the load R10 is assumed to be light enough and in no load condition. Then, the circuit constant of each element is the inductance of inductor L10: 22 [ ⁇ H], capacitance of capacitor C10: 100 [ ⁇ F], forward voltage drop of diode D10: 0.5 [V], and power supply 11
  • the waveform of the simulation result is shown in FIG. 3 with the input voltage Vcc: 10 [V], the forward voltage drop of the diode D11: 0.5 [V], and the resistance value of the resistor R11: 0.1 [ ⁇ ]. .
  • short-term (transient) ratings are defined for power devices such as diodes.
  • the allowable value for example, the rating of the energizing current is defined to be larger than the continuous rating. Therefore, it is not necessary to select diode D11 or resistor R11 as this transient current constantly flows, and it is sufficient to select it if it is acceptable as the transient characteristic, and a general-purpose component is used. And cost can be reduced.
  • the resistance value of resistor R11 of bypass path 16 is increased to thereby allow the transient current flowing in diode D11 to It can be suppressed.
  • FIG. 4 is a second simulation circuit diagram of the power supply circuit according to the first embodiment of the present invention.
  • FIG. 5 is a waveform diagram of the second simulation circuit diagram of FIG.
  • the output voltage Vo exceeds the input voltage Vcc of the power supply 11 by about 1 [V] because it consumes power by the load R10, but attenuates quickly. And converges below the input voltage Vcc. Therefore, even when the load R10 is provided, the excessive supply of the output voltage Vo due to the LC resonance is suppressed to a low level, and the suppression effect of the LC resonance due to the charging of the capacitor C10 by the bypass path 16 is also large.
  • the resistance component of the diode D11 and the resistor R11 of the bypass path 16 from the power supply 11 to the capacitor C10 and the capacitor C10 The value of the time constant determined by the above is smaller than the time constant determined by the inductance of the inductor L10 of the main path 15, the ON resistance value of the diode D10, and the capacitor C10.
  • the speed at which the capacitor C10 is charged via the bypass path 16 may be set to be faster than the speed at which the capacitor C10 is charged via the main path 15.
  • the capacitor C10 is charged with a voltage twice the input voltage Vcc at maximum.
  • the bypass path 16 is provided, even if LC resonance occurs, damage to the load R10 or the like should be prevented if the peak voltage is contained by several percent or several percent of the input voltage Vcc. Can.
  • the LC resonance can be effectively suppressed in the bypass path 16 in the present embodiment because charging from the bypass path 16 is performed by so-called CR (capacitor and resistor) circuit without providing an inductor in the bypass path 16. It is because it is a non-oscillating one.
  • the charge current due to LC resonance is delayed from the rise of the voltage of the power supply 11 due to the influence of the inductor L10.
  • charging in the bypass path 16 is started without delay when applying the input voltage Vcc from the power supply 11, and the charging current is larger as the capacitor C10 is not charged, ie, the voltage difference with the power supply 11 is larger. Immediately charge the capacitor C10.
  • the magnetic energy to the inductor L10 required to cause LC resonance increases as the voltage across the inductor L10 and the time increase.
  • the capacitor C10 since the capacitor C10 is charged to approximately the input voltage Vcc first, the voltage across the inductor L10 decreases. Therefore, immediately after the input voltage Vcc is applied, the magnetic energy held by the inductor L10 can also be suppressed to a low level, and the charging voltage to the capacitor C10 can be suppressed to a low level.
  • the load R10 is not damaged by the overvoltage, and the safety and reliability can be enhanced.
  • a bypass path 16 is configured instead of connecting a current limiting element such as a resistor in series in the main path 15. Therefore, the power loss due to the voltage drop of the element provided in the bypass path 16 is only generated temporarily and not constantly, so the power conversion efficiency is reduced by providing the bypass path 16. It can be almost ignored.
  • the bypass path 16 can minimize the current flow to the inductor before the start of the boosting operation, the magnetic energy is not excessively stored in the inductor L10, and the excess magnetic energy is wasted. Power conversion efficiency can be improved.
  • the diode D11 and the resistor R11 disposed in the bypass path 16 and the inductor L10 which is an element related to the boosting operation excluding the capacitor C10, and the diode D10.
  • the N-channel MOSFET Q10 and the control circuit 12 correspond to the chopper circuit in the present invention.
  • FIG. 6 is a circuit diagram of a power supply circuit according to a second embodiment of the present invention. As shown in FIG. 6, in the bypass path 26 of the power supply circuit 20 in the second embodiment, the diode D11 in the bypass path 16 in the first embodiment is only the MOSFET Q20, and the other configuration is the same.
  • the MOSFET Q20 (second switching element) of the power supply circuit 20 is a P-channel MOSFET, and is a body diode (second reverse current) caused by the element structure in the direction from the left to the right of the bypass path 26 in FIG. Protection element).
  • the gate of the MOSFET Q20 is connected to the control circuit 22, and functions as a switch element although the operation timing is different as in the MOSFET Q10.
  • the control circuit 22 controls the MOSFET Q20 to turn on while the MOSFET Q10 is not switching, and turns off the MOSFET Q20 while the MOSFET Q10 is switching. Control.
  • FIG. 7 is a peripheral circuit diagram of the MOSFET arranged in the bypass path of FIG.
  • the MOSFET Q20 is a P-channel type, and the ON / OFF control signal from the control circuit 22 is applied to the gate through the resistor R21, while the gate is also connected to the power supply 21 through the resistor R20. It is connected.
  • the resistor R22 is a bias resistor for turning off the MOSFET Q20 when the control circuit 22 receives an OFF control signal (a signal approaching a voltage value on the capacitor C10 side).
  • the control circuit 22 drives and starts the boosting operation
  • the constant of each element is turned off with respect to the MOSFET Q20, and the boosting operation is stopped, or during or immediately after the reset of the control circuit 22, etc. It is set to be in the ON state when it is not necessary or impossible to perform the boosting operation.
  • the voltage of the power supply 21 may be any value of plus, minus, or 0 (GND), and may be selected as long as the conditions described above are satisfied and the MOSFET Q20 is not damaged.
  • the resistors R20, R21 and R22 and the power supply 21 can be selected to satisfy the ON / OFF conditions of the MOSFET Q20 and the MOSFET Q20 can be selected in any manner, including the necessity. Design it at will.
  • the voltage of the power supply 11 or the capacitor C10 after the boosting operation becomes as high as several tens [V] or more If the gate voltage of the MOSFET Q20 becomes too low with respect to the source voltage and the withstand voltage between the gate of the MOSFET Q20 and the drain or source is exceeded, or if the control circuit 22 tries to turn off the MOSFET Q20, the voltage of the gate However, there is a possibility that it can not go off without sufficiently rising. In that case, a Zener diode D20 may be inserted to obtain a constant voltage at the position shown by the broken line in FIG.
  • the P-channel MOSFET Q20 has a diode (body diode) derived from the structure of the MOSFET in the direction from the drain to the source.
  • a diode body diode
  • the bypass path 26 via the body diode from the power supply 11 to the capacitor C10 is configured, it is possible to prevent the generation of the overvoltage due to the LC resonance.
  • a diode may be separately connected in the same direction as the body diode.
  • the voltage drop in the bypass path 26 is usually larger than when passing through the MOSFET Q 20, so the power loss in the diode or body diode is slightly larger.
  • the charging to the capacitor C10 is ended instantaneously, there is no big difference.
  • the MOSFET Q20 including the body diode in the bypass path 26 the operation of the bypass path 26, that is, the suppression of the LC resonance by the rapid charging of the capacitor C10, is not performed properly.
  • the capacitor C10 is charged via the bypass path 26 as in the first embodiment.
  • the bypass path 26 is far better than the first embodiment by providing the MOSFET Q 20 which conducts current in both directions instead of the diode which conducts current only in one direction. Show the characteristics. Specifically, this will be described below.
  • FIG. 8 is a third simulation circuit diagram of the power supply circuit according to the second embodiment of the present invention.
  • FIG. 9 is a waveform diagram in the third simulation circuit diagram of FIG.
  • the third simulation circuit is a simulation circuit similar to the first simulation circuit according to the first embodiment.
  • the numerical value of each element is the same as that of the first embodiment described above.
  • the ON resistance of the MOSFET Q20 is considered to be included in the resistor R11, and the forward voltage of the body diode of the MOSFET Q20 is 0.5 [V].
  • the control circuit 22 before the control circuit 22 detects the application of the input voltage Vcc from the power supply 11 and starts the boost operation, the control circuit 22 turns off the MOSFET Q20 of the bypass path 26.
  • the output after boosting is not short-circuited with the power supply 11, and the current is controlled so as not to backflow through the bypass path 26.
  • the reverse flow via the bypass path 26 can be easily prevented by turning off the MOSFET Q20.
  • the load R10 is not a simple resistor, but has a predetermined threshold voltage for light emission like an LED (light emitting diode), and a current lower than that has almost no current flow Even in this second embodiment, the electrical energy of the capacitor C10 connected to the load R10 can be returned to the power supply 11.
  • control circuit 22 may turn on the MOSFET Q20 for bypassing while turning off the MOSFET Q10 for boosting.
  • the MOSFET Q20 is taken as an example of the switch element disposed in the bypass path 26, but a bipolar transistor may be used instead of the MOSFET Q20. Further, the bipolar transistor can be used in either a PNP type or an NPN type if it has a corresponding circuit configuration.
  • FIG. 10 is a peripheral circuit diagram of a transistor when it is configured of a transistor instead of the MOSFET arranged in the bypass path of FIG. 7.
  • a PNP bipolar transistor Q21 is arranged in the bypass path 26 in place of the MOSFET Q20 of the second embodiment shown in FIGS. Furthermore, a diode D21 (second backflow prevention element) is connected in parallel in a direction from the collector to the emitter of the bipolar transistor Q21 (second switching element).
  • the DC voltage input to the power supply circuit is Not only the voltage generated directly but also the AC voltage generated from the AC power supply may be rectified by the rectification circuit, and the rectified DC voltage may be input to the power supply circuit.
  • resistor R11 for current restriction is provided in the bypass path in the embodiment and the modification described above, any element such as a constant current diode may be used as long as the element has a current restriction function.
  • this current limiting element may be omitted when the diode D11 or the power source 11 has a withstand voltage to the current at the time of charging.
  • any element may be used as long as it is a switching element capable of interrupting the bypass path during conduction of the bypass path to cause the MOSFET Q10 to perform switching operation.
  • the bypass path 16 is configured to bypass the inductor L10 of the main path 15 and the diode D10.
  • the bypass path 16 is at least a main path 15 that causes LC resonance.
  • the inductor L10 may be bypassed. Therefore, for example, in the power supply circuit 10 as shown in FIG. 1, the downstream end of the bypass path 16 may be connected not to the cathode of the diode D10 but to the connection point between the inductor L10 and the anode of the diode D10.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

Le but de la présente invention est de réduire les coûts et d'améliorer l'efficacité de conversion électrique. Un circuit d'alimentation électrique (10) comprend un inducteur de type survolteur (L10) dont une extrémité est connectée au côté plus d'une alimentation électrique (11), une diode (D10) dont la cathode est connectée à l'autre extrémité de l'inducteur (L10) et dont l'anode est connectée au côté plus d'un consommateur (R10), un MOSFET de type canal N (Q10) dont le drain est connecté à la cathode de la diode (D10) et dont la source est connectée à la terre (GND), un circuit de commande (12) qui est connecté à la grille du MOSFET (Q10), un condensateur (C10) qui est connecté à une pièce située entre l'anode de la diode (D10) et la terre (GND), une diode (D11) dont la cathode est connectée à une extrémité de l'inducteur (L10), et une résistance (R11) qui est connectée à l'anode de la diode (D11) et au côté plus du consommateur (R10).
PCT/JP2011/064365 2010-07-21 2011-06-23 Dispositif d'alimentation électrique Ceased WO2012011357A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2908415A1 (fr) * 2014-02-13 2015-08-19 Nxp B.V. Circuit de diode et convertisseur élévateur de tension de correction de facteur de puissance l'utilisant
CN112311235A (zh) * 2019-07-25 2021-02-02 夏普株式会社 整流电路以及电源装置

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6025371B2 (ja) * 2012-04-11 2016-11-16 三菱電機株式会社 電源装置及び照明器具
JP5822792B2 (ja) * 2012-06-20 2015-11-24 シャープ株式会社 電源回路およびそれを備える空気調和機
CN103138575B (zh) * 2013-03-26 2016-02-24 西安理工大学 带缓冲吸收电路的箝位式Boost变换器
CN103151923B (zh) * 2013-03-28 2016-04-06 北京经纬恒润科技有限公司 一种稳压装置
CN104038044A (zh) * 2014-05-20 2014-09-10 广东美的暖通设备有限公司 Igbt缓冲电路、pfc电路和空调控制系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252165A (ja) * 1988-03-30 1989-10-06 Toshiba Lighting & Technol Corp 昇圧チョッパ回路
JP2002095245A (ja) * 2000-09-11 2002-03-29 Tohoku Ricoh Co Ltd Ｄｃ／ｄｃコンバータ
JP2008086092A (ja) * 2006-09-27 2008-04-10 Funai Electric Co Ltd 電源装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750982B2 (ja) * 1989-04-11 1995-05-31 富士電気化学株式会社 電源装置
EP1543599A1 (fr) * 2003-08-05 2005-06-22 Matsushita Electric Industrial Co., Ltd. Alimentation electrique en courant continu, et appareil electronique a batterie equipe de cette alimentation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01252165A (ja) * 1988-03-30 1989-10-06 Toshiba Lighting & Technol Corp 昇圧チョッパ回路
JP2002095245A (ja) * 2000-09-11 2002-03-29 Tohoku Ricoh Co Ltd Ｄｃ／ｄｃコンバータ
JP2008086092A (ja) * 2006-09-27 2008-04-10 Funai Electric Co Ltd 電源装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2908415A1 (fr) * 2014-02-13 2015-08-19 Nxp B.V. Circuit de diode et convertisseur élévateur de tension de correction de facteur de puissance l'utilisant
US9608514B2 (en) 2014-02-13 2017-03-28 Nxp B.V. Diode circuit and power factor correction boost converter using the same
CN112311235A (zh) * 2019-07-25 2021-02-02 夏普株式会社 整流电路以及电源装置
CN112311235B (zh) * 2019-07-25 2024-06-11 夏普株式会社 整流电路以及电源装置

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