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WO2012008072A1 - Dispositif de capture d'image à semi-conducteurs - Google Patents

Dispositif de capture d'image à semi-conducteurs Download PDF

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Publication number
WO2012008072A1
WO2012008072A1 PCT/JP2011/002238 JP2011002238W WO2012008072A1 WO 2012008072 A1 WO2012008072 A1 WO 2012008072A1 JP 2011002238 W JP2011002238 W JP 2011002238W WO 2012008072 A1 WO2012008072 A1 WO 2012008072A1
Authority
WO
WIPO (PCT)
Prior art keywords
solid
glass substrate
wiring board
printed wiring
transparent glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/002238
Other languages
English (en)
Japanese (ja)
Inventor
隆 田制
貴雄 竹下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of WO2012008072A1 publication Critical patent/WO2012008072A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50—Constructional details
    • H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/57—Mechanical or electrical details of cameras or camera modules specially adapted for being embedded in other devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/407—Optical elements or arrangements indirectly associated with the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Definitions

  • the present invention relates to a solid-state imaging device.
  • the present invention relates to a small solid-state imaging device formed using a solid-state imaging device such as a monitoring camera, a medical camera, an in-vehicle camera, and an information communication terminal camera.
  • a conventional imaging device using a semiconductor imaging element is formed by combining parts such as an LSI mounted with a lens, a semiconductor imaging element, a driving circuit thereof, a signal processing circuit, and the like in a housing or a structure, and combining them. .
  • the mounting structure based on such a combination was formed by mounting each element on a printed circuit board on a flat plate.
  • the demand for further thinning of individual devices has been increasing year by year due to the demand for further thinning of cellular phones and the like, and in order to respond to the demand, a flexible wiring board is used or a transparent member is directly attached. Attempts have been made to make the imaging device thinner by flip-chip mounting the IC.
  • the glass substrate and the printed wiring board are electrically connected via the solder ball. However, when this electrical connection is made, the glass substrate may be broken.
  • the reflow temperature of the mounting portion is about 250 ° C. at the peak. Further, during cooling after reflow, a load is applied to the mounting portion due to the difference in contraction between the two substrates, and the translucent substrate may be destroyed.
  • the present invention has been made in view of the above circumstances, and is capable of preventing the translucent substrate from being destroyed when the translucent substrate is mounted on a printed wiring board or used.
  • An object is to provide an apparatus.
  • a solid-state imaging device of the present invention includes a solid-state imaging device, a translucent substrate on which the solid-state imaging device is mounted, a printed wiring board on which the translucent substrate is mounted via a low melting point solder as a joining member, The solid-state imaging device is arranged between the translucent board and the printed wiring board, and the imaging area is arranged to face the translucent board.
  • This configuration can prevent the translucent substrate from being broken when the translucent substrate is mounted on the printed wiring board.
  • low melting point solder it is possible to suppress an increase in the reflow temperature of the mounting part, so that the shrinkage difference between the translucent board and the printed wiring board during cooling after reflow is reduced, and the mounting part is Therefore, it is possible to suppress the breakage of the translucent substrate.
  • the solid-state imaging device of the present invention includes a solid-state imaging device, a translucent substrate on which the solid-state imaging device is mounted, and a print on which the translucent substrate is mounted via a conductive adhesive as a bonding member.
  • This configuration can prevent the translucent substrate from being broken when the translucent substrate is mounted on the printed wiring board. Furthermore, since the elastic modulus of the conductive adhesive is smaller than that of the low melting point solder, when the deformation amount (strain) of the translucent substrate is the same, the stress is relatively smaller than the above (Equation 1). Value. Accordingly, it is possible to further suppress the breakage of the translucent substrate.
  • the translucent substrate it is possible to prevent the translucent substrate from being destroyed when the translucent substrate is mounted on a printed wiring board or used.
  • FIG. 1 is a partially exploded perspective view of a solid-state imaging device according to a first embodiment of the present invention.
  • FIG. 2 is a partial assembly diagram of the solid-state imaging device according to the first embodiment of the present invention.
  • 1 is a partially exploded perspective view of a solid-state imaging device according to a first embodiment of the present invention.
  • Assembly completion drawing of solid-state imaging device according to first embodiment of the present invention Sectional drawing of the assembly completion state of the solid-state imaging device in the 1st Embodiment of this invention It is a figure which shows an example of the stress concerning a transparent glass substrate at the time of the temperature fall after the reflow in the embodiment of the present invention, (A) When using a conventional solder ball, (B) When using a low melting point solder ball, (C) The figure which shows when the conductive adhesive is used (A) Sectional view of a first modification of the assembly completion state of the solid-state imaging device according to the first embodiment of the present invention, (B) Second view of the assembly completion state of the solid-state imaging device according to the first embodiment of the present invention.
  • Cross section of the modification (A) Sectional view of the first example of the assembly completion state of the solid-state imaging device according to the second embodiment of the present invention, (B) Second example of the assembly completion state of the solid-state imaging device according to the second embodiment of the present invention.
  • the solid-state imaging device of this embodiment includes a solid-state imaging device, a transparent glass substrate on which the solid-state imaging device is mounted, and a printed wiring board on which the transparent glass substrate is mounted via a low melting point solder ball as a joining member.
  • the solid-state imaging device is arranged between the transparent glass substrate and the printed wiring board, and the imaging region is arranged so as to face the transparent glass substrate.
  • FIG. 1 is a partially exploded perspective view of the solid-state imaging device of the present embodiment.
  • Electrode pads 2 and 4 are formed on the transparent glass substrate 1.
  • the electrode pads 2 and the electrode pads 4 are wired by the wiring pattern 3 on the surface of the transparent glass substrate 1 and are electrically connected.
  • the electrode pad 2 is for connection with the solid-state image sensor 5, and the electrode pad 4 is for electrical connection with a printed wiring board 9 (see FIG. 3) that extracts the signal of the solid-state image sensor 5 to the outside.
  • an imaging region (light receiving area) 6 is arranged to face the electrode pad 2 of the transparent glass substrate 1.
  • metal bumps 15 are formed on the electric wiring pads on the surface of the solid-state imaging device 5 (see FIG. 5) and mounted on the electrode pads 2.
  • an insulating sealing resin 7 is injected in order to ensure the adhesion strength and electrical connection reliability of the solid-state imaging device 5 (see FIG. 2).
  • FIG. 2 is a partial assembly diagram of the solid-state imaging device of the present embodiment.
  • the solid-state imaging device 5 is mounted on the transparent glass substrate 1 and the insulating sealing resin 7 is injected.
  • the insulating sealing resin 7 surrounds the periphery of the metal bump 15 (see FIG. 5) of the solid-state imaging device 5 without leaking into the imaging region 6 and ensures adhesion strength.
  • a flux is applied, and a low melting point solder ball 8 as a joining member is attached by reflow.
  • FIG. 3 is a partially exploded perspective view of the solid-state imaging device of the present embodiment.
  • Cream solder is printed on the printed wiring board 9.
  • the transparent glass substrate 1 on which the solid-state imaging device 5 is mounted and the low melting point solder balls 8 are attached is reversed and placed on the printed wiring board 9 and soldered by reflow. Thereby, the transparent glass substrate 1 and the printed wiring board 9 are electrically connected. Further, the strength of the periphery of the low melting point solder ball 8 is reinforced by an underfill (sealing resin) (not shown).
  • the insulating sealing resin 7 injected in the previous process is exposed. In this state, a lens housing 12 in which the lens 11 is installed from above is prepared.
  • this lens housing 12 When this lens housing 12 is mounted with the surface of the printed wiring board 9 on the side where the transparent glass substrate 1 is mounted as a reference surface and integrated with the printed wiring board 9, a solid-state imaging device is completed.
  • the lens 11, the transparent glass substrate 1, the solid-state imaging device 5, and the printed wiring board 9 are arranged in this order from the subject side. As shown in FIG. 3, the lens 11 and the transparent glass substrate 1 are not in contact with each other when the lens housing 12 is mounted on the printed wiring board 9.
  • FIG. 4 is an assembly completion diagram of the solid-state imaging device of the present embodiment.
  • FIG. 5 is a cross-sectional view of the completed assembly of the solid-state imaging device of the present embodiment.
  • the transparent glass substrate 1 is mounted on the surface of the printed wiring board 9 via a low melting point solder ball 8, and the periphery of the low melting point solder ball 8 is reinforced by an underfill (not shown).
  • the low melting point solder ball 8 is in contact with an electrode pad (not shown) on the surface of the printed wiring board 9.
  • a solid-state imaging device 5 having an imaging region 6 is mounted on the transparent glass substrate 1 via metal bumps 15, and an insulating sealing resin 7 is injected and cured without a shortage around the solid-state imaging device 5.
  • the insulating sealing resin 7 does not leak into the imaging region 6 of the solid-state imaging device 5. This is achieved by using a UV curable material for the insulating sealing resin 7 at the time of manufacture, and performing sealing injection while irradiating the imaging region 6 with UV light.
  • the solid-state imaging device chip is becoming thinner, and it is desirable to use a light-shielding substrate as the printed wiring board 9 in order to prevent light from coming from the back surface. It is desirable to use a light shielding resin such as a resin. Further, a ceramic substrate, a glass substrate on which a light-shielding film is formed, and the like are also applicable.
  • the low melting point solder for example, “L20-BLT5-T8F” manufactured by Senju Metal Co., Ltd. is used.
  • This low melting point solder is a solder that can be reflowed in a low temperature range (170 ° C. to 190 ° C.). It has a composition of Sn-58Bi and has a melting point: 139 ° C., reflow peak temperature: 160 ° C., Young's modulus: 33.0 GPa, and expansion coefficient: 15.4 ppm / ° C.
  • the transparent glass substrate for example, a glass substrate having a Young's modulus: 72.9 GPa and a linear expansion coefficient of 7.2 M ⁇ 10 ⁇ 6 / ° C. is used.
  • an optical filter film or an antireflection film may be used instead of the transparent glass substrate 1.
  • 6A to 6C are diagrams showing an example of stress applied to the transparent glass substrate 1 when the temperature decreases after reflow.
  • the temperature of the transparent glass substrate 1 at the time of reflow is about 220 ° C.
  • the temperature drops to room temperature (about 25 ° C.).
  • the maximum stress generated in the transparent glass substrate 1 (here, the stress applied to the vicinity of the solder ball) is set to 100. This state is shown in FIG.
  • the temperature of the transparent glass substrate 1 at the time of reflow is about 140 ° C., and the transparent after reflow is transparent.
  • the temperature of the glass substrate 1 decreases to room temperature (about 25 ° C.).
  • the maximum stress generated in the transparent glass substrate 1 is about 45. This state is shown in FIG.
  • the stress applied to the transparent glass substrate 1 after reflow is smaller when the low melting point solder ball 8 of the present embodiment is used than when the conventional solder ball is used, the transparent glass substrate 1 is not easily broken. .
  • the printed wiring board 9 may have an opening in a region facing the solid-state imaging element 5. Accordingly, when the transparent glass substrate 1 is mounted on the printed wiring board 9 via the low melting point solder ball 8 even when the length of the low melting point solder ball 8 in the thickness direction (X direction) is relatively short. In addition, the transparent glass substrate 1 can be mounted without being destroyed, and the printed wiring board 9 and the transparent glass substrate 1 are not in contact with each other.
  • the printed wiring board 9 may have a cavity portion 10, and an electrode pad (not shown) for mounting may be formed outside the cavity portion 10.
  • the mounting electrode pad and the low melting point solder ball 8 are in contact with each other, and the low melting point solder ball 8 and the electrode pad 4 on the glass substrate 1 are in contact with each other.
  • the length in the thickness direction (X direction) of the low melting point solder ball 8 and the length in the thickness direction (X direction) of the cavity portion 10 of the printed wiring board 9 Is longer than the distance between the solid-state imaging device 5 and the transparent glass substrate 1. Thereby, it is possible to mount without the transparent glass substrate 1 being destroyed and without the printed wiring board 9 and the transparent glass substrate 1 being in contact with each other.
  • a low melting point solder paste (printed solder) 18 is used as a joining member for joining the printed wiring board 9 and the transparent glass substrate 1.
  • the configuration is basically the same as that of the solid-state imaging device according to the first embodiment except that the low melting point solder paste 18 is used as the joining member.
  • the specification of the low melting point solder used for the low melting point solder paste 18 is the same as the specification of the low melting point solder used for the low melting point solder ball 8 described in the first embodiment. Therefore, the temperature change of the transparent glass substrate 1 and the stress applied to the transparent glass substrate 1 during reflow when the low melting point solder paste 18 is used are the same as when the low melting point solder ball 8 is used (FIG. 6 ( B)).
  • the low melting point solder paste 18 is printed on the electrode pads of the printed wiring board 9.
  • the transparent glass substrate 1 is placed on the printed wiring board 9 by adjusting the electrode pads of the transparent glass board 1 to be arranged on the electrode pads of the printed wiring board 9 on which the low melting point solder paste 18 is printed and applied. To do.
  • the transparent glass substrate 1 and the printed wiring board 9 are joined via the low melting point solder paste 18 by heating the low melting point solder paste 18.
  • the printed wiring board 9 when the low melting point solder paste 18 is used, for example, the following two types are conceivable.
  • the printed wiring board 9 may have an opening in a region facing the solid-state imaging element 5.
  • the printed wiring board 9 may have a cavity portion 10, and an electrode pad (not shown) for mounting may be formed outside the cavity portion 10.
  • the mounting electrode pad and the low melting point solder paste 18 are in contact with each other, and the low melting point solder paste 18 and the electrode pad 4 on the glass substrate 1 are in contact with each other.
  • the length in the thickness direction (X direction) of the low melting point solder paste 18 and the length in the thickness direction (X direction) of the cavity portion 10 of the printed wiring board 9 Is longer than the distance between the solid-state imaging device 5 and the transparent glass substrate 1. Thereby, it is possible to mount without the transparent glass substrate 1 being destroyed and without the printed wiring board 9 and the transparent glass substrate 1 being in contact with each other.
  • a conductive adhesive (conductive paste) 28 is used as a bonding member for bonding the printed wiring board 9 and the transparent glass substrate 1.
  • the configuration is basically the same as that of the solid-state imaging device according to the first embodiment except that the conductive adhesive 28 is used as the joining member.
  • conductive adhesive 28 of this embodiment for example, a solder substitute conductive adhesive “H9626D” manufactured by NAMICS is used.
  • This conductive adhesive is a solventless thermosetting conductive adhesive and has the following characteristics.
  • composition Ag Viscosity: 47 Pa ⁇ s / 25 ° C. T.A. I. : 5.0, Specific gravity: 3.7, Specific resistance value: 2.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm by TMA method Adhesive strength: 40 N / mm 2 by DMA method Linear expansion coefficient: ⁇ 1: 40 ppm by DMA method, ⁇ 2: 100 ppm, Glass fiber temperature: 120 ° C. Young's modulus: 6.5 GPa, Purity: 3.0 ppm for Na (atomic absorption spectrophotometer), 25 ppm for Cl (ion chromatograph)
  • the conductive adhesive is cured by maintaining the state of the conductive adhesive at 150 degrees for 30 minutes.
  • the frozen (about ⁇ 20 ° C.) conductive adhesive 28 is left until it reaches room temperature. Then, the conductive adhesive 28 is applied on the electrode pads of the printed wiring board 9, and the electrode pads of the transparent glass substrate 1 are arranged on the electrode pads of the printed wiring board 9 to which the conductive adhesive 28 is applied. Adjust and place the transparent glass substrate 1. Subsequently, the conductive adhesive 28 is heated (150 ° C. ⁇ 30 minutes) to thermally cure the conductive adhesive 28, and the transparent glass substrate 1 and the printed wiring board 9 are bonded via the conductive adhesive 28. To do.
  • the temperature of the transparent glass substrate 1 during heating is about 150 ° C. 25 ° C).
  • the maximum stress generated in the transparent glass substrate 1 (here, the stress applied to the vicinity of the conductive adhesive 28) is about 50. This state is shown in FIG.
  • the stress applied to the transparent glass substrate 1 after the heating to room temperature is reduced by using the conductive adhesive 28 of the present embodiment, compared with the case of using the conventional solder balls. Is harder to break.
  • the printed wiring board 9 when the conductive adhesive 28 is used, for example, the following three types are conceivable.
  • the printed wiring board 9 may have an opening in a region facing the solid-state imaging element 5. Thereby, even if it is a case where the length of the thickness direction (X direction) of the conductive adhesive 28 is comparatively short, the transparent glass substrate 1 does not break down, and the printed wiring board 9 and the transparent glass substrate 1 It is possible to mount without contact.
  • the printed wiring board 9 may have a cavity portion 10, and an electrode pad (not shown) for mounting may be formed outside the cavity portion 10.
  • the mounting electrode pad and the conductive adhesive 28 are in contact with each other, and the conductive adhesive 28 and the electrode pad 4 of the transparent glass substrate 1 are in contact with each other.
  • the length of the conductive adhesive 28 in the thickness direction (X direction) and the length of the cavity portion 10 of the printed wiring board 9 in the thickness direction (X direction) Is longer than the distance between the solid-state imaging device 5 and the transparent glass substrate 1. Thereby, it is possible to mount without the transparent glass substrate 1 being destroyed and without the printed wiring board 9 and the transparent glass substrate 1 being in contact with each other.
  • the printed wiring board 9 may have a flat plate shape, and metal bumps may be formed at predetermined positions.
  • the conductive adhesive 28 is applied to the region where the metal bumps are formed. This metal bump functions as an electrode portion of the printed wiring board 9, and the metal bump and the conductive adhesive 28 are in contact with each other, and the conductive adhesive 28 and the electrode pad 4 of the transparent glass substrate 1 are in contact with each other.
  • the sum of the length in the thickness direction (X direction) of the metal bump and the length in the thickness direction (X direction) of the conductive adhesive 28 is solid-state imaging. It is longer than the distance between the element 5 and the transparent glass substrate 1. Thereby, it is possible to mount without the transparent glass substrate 1 being destroyed and without the printed wiring board 9 and the transparent glass substrate 1 being in contact with each other.
  • the transparent glass substrate 1 and the print can be printed after reflowing or cooling after heating.
  • Thermal contraction with the wiring board 9 can be absorbed. Thereby, it can suppress that a load is added to a mounting part by the shrinkage
  • the present invention is useful for a solid-state imaging device or the like that can prevent the translucent substrate from being destroyed when the translucent substrate is mounted on or used on a printed wiring board.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)

Abstract

La présente invention concerne un dispositif de capture d'image à semi-conducteurs dans lequel on peut éviter qu'un substrat translucide se brise au moment de son montage sur une carte de circuit imprimé. Le dispositif de capture d'image à semi-conducteurs est équipé d'un élément de capture d'image à semi-conducteurs (5), d'un substrat en verre transparent (1) sur lequel est monté l'élément de capture d'image à semi-conducteurs (5), et d'une carte de circuit imprimé (9) sur laquelle est monté le substrat en verre transparent (1), une boule de soudure à point de fusion bas (8) étant disposée entre ledit substrat et ladite carte en tant qu'élément de liaison. L'élément de capture d'image à semi-conducteur (5) est disposé entre le substrat en verre transparent (1) et la carte de circuit imprimé (9), et une région de capture d'image (6) est disposée en regard du substrat en verre transparent (1).
PCT/JP2011/002238 2010-07-16 2011-04-15 Dispositif de capture d'image à semi-conducteurs Ceased WO2012008072A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010-161798 2010-07-16
JP2010161798A JP2012023667A (ja) 2010-07-16 2010-07-16 固体撮像装置

Publications (1)

Publication Number Publication Date
WO2012008072A1 true WO2012008072A1 (fr) 2012-01-19

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Application Number Title Priority Date Filing Date
PCT/JP2011/002238 Ceased WO2012008072A1 (fr) 2010-07-16 2011-04-15 Dispositif de capture d'image à semi-conducteurs

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JP (1) JP2012023667A (fr)
WO (1) WO2012008072A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768389A (zh) * 2012-07-20 2018-03-06 株式会社尼康 拍摄单元

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6251235B2 (ja) * 2012-03-20 2017-12-20 アルファ・アセンブリー・ソリューションズ・インコーポレイテッドＡｌｐｈａ Ａｓｓｅｍｂｌｙ Ｓｏｌｕｔｉｏｎｓ Ｉｎｃ． はんだ予成形品およびはんだ合金組付方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158326A (ja) * 2000-11-08 2002-05-31 Apack Technologies Inc 半導体装置、及び製造方法
JP2002223378A (ja) * 2000-11-14 2002-08-09 Toshiba Corp 撮像装置及びその製造方法、ならびに電気機器
JP2003163345A (ja) * 2001-11-27 2003-06-06 Canon Inc 放射線変換基板、放射線検出装置
JP2007288755A (ja) * 2006-04-14 2007-11-01 Optopac Co Ltd カメラモジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002158326A (ja) * 2000-11-08 2002-05-31 Apack Technologies Inc 半導体装置、及び製造方法
JP2002223378A (ja) * 2000-11-14 2002-08-09 Toshiba Corp 撮像装置及びその製造方法、ならびに電気機器
JP2003163345A (ja) * 2001-11-27 2003-06-06 Canon Inc 放射線変換基板、放射線検出装置
JP2007288755A (ja) * 2006-04-14 2007-11-01 Optopac Co Ltd カメラモジュール

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768389A (zh) * 2012-07-20 2018-03-06 株式会社尼康 拍摄单元

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