[go: up one dir, main page]

WO2012002666A3 - Graphene manufacturing apparatus and method - Google Patents

Graphene manufacturing apparatus and method Download PDF

Info

Publication number
WO2012002666A3
WO2012002666A3 PCT/KR2011/004524 KR2011004524W WO2012002666A3 WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3 KR 2011004524 W KR2011004524 W KR 2011004524W WO 2012002666 A3 WO2012002666 A3 WO 2012002666A3
Authority
WO
WIPO (PCT)
Prior art keywords
gas
deposition chamber
manufacturing apparatus
temperature
heating unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/004524
Other languages
French (fr)
Other versions
WO2012002666A2 (en
Inventor
Dong-Kwan Won
Seung-Min Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hanwha Vision Co Ltd
Original Assignee
Samsung Techwin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110026455A external-priority patent/KR101828528B1/en
Application filed by Samsung Techwin Co Ltd filed Critical Samsung Techwin Co Ltd
Priority to CN201180032694.1A priority Critical patent/CN102958832B/en
Priority to US13/807,360 priority patent/US20130122220A1/en
Publication of WO2012002666A2 publication Critical patent/WO2012002666A2/en
Publication of WO2012002666A3 publication Critical patent/WO2012002666A3/en
Anticipated expiration legal-status Critical
Priority to US14/831,031 priority patent/US20150353362A1/en
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

A graphene manufacturing apparatus includes a gas supplying unit supplying a gas including carbon; a gas heating unit heating the gas supplied from the gas supplying unit; a deposition chamber in which a substrate having a catalyst layer is disposed; and an inlet pipe introducing the gas of the gas heating unit into the deposition chamber. A temperature of the deposition chamber is set at a temperature lower than a temperature of the gas heating unit so that a selection range with respect to a catalyst metal to be used in the catalyst layer may be expanded, and damage of the substrate due to a high temperature heat may be minimized.
PCT/KR2011/004524 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method Ceased WO2012002666A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180032694.1A CN102958832B (en) 2010-06-28 2011-06-22 Graphene manufacturing equipment and method
US13/807,360 US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0061274 2010-06-28
KR20100061274 2010-06-28
KR1020110026455A KR101828528B1 (en) 2010-06-28 2011-03-24 Manufacturing apparatus and method of graphene
KR10-2011-0026455 2011-03-24

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/807,360 A-371-Of-International US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 Division US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

Publications (2)

Publication Number Publication Date
WO2012002666A2 WO2012002666A2 (en) 2012-01-05
WO2012002666A3 true WO2012002666A3 (en) 2012-05-31

Family

ID=45402522

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/004524 Ceased WO2012002666A2 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method

Country Status (1)

Country Link
WO (1) WO2012002666A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583340B (en) * 2012-01-20 2013-09-18 中国科学院上海硅酸盐研究所 High-conductivity graphene material with low-temperature gas-phase reduction and preparation method thereof
TWI457277B (en) * 2012-08-10 2014-10-21 Nat Univ Tsing Hua A graphene manufacturing system and the method thereof
US9431487B2 (en) 2013-01-11 2016-08-30 International Business Machines Corporation Graphene layer transfer
CN113382960A (en) * 2019-03-18 2021-09-10 280公司 System and method for fabricating graphene layers on a substrate

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068471A1 (en) * 2007-09-10 2009-03-12 Samsung Electronics Co., Ltd. Graphene sheet and process of preparing the same
US20090110627A1 (en) * 2007-10-29 2009-04-30 Samsung Electronics Co., Ltd. Graphene sheet and method of preparing the same
US20090155561A1 (en) * 2007-12-17 2009-06-18 Samsung Electronics Co., Ltd. Single crystalline graphene sheet and process of preparing the same
US20090324897A1 (en) * 2007-09-18 2009-12-31 Samsung Electronics Co., Ltd. Graphene pattern and process of preparing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090068471A1 (en) * 2007-09-10 2009-03-12 Samsung Electronics Co., Ltd. Graphene sheet and process of preparing the same
US20090324897A1 (en) * 2007-09-18 2009-12-31 Samsung Electronics Co., Ltd. Graphene pattern and process of preparing the same
US20090110627A1 (en) * 2007-10-29 2009-04-30 Samsung Electronics Co., Ltd. Graphene sheet and method of preparing the same
US20090155561A1 (en) * 2007-12-17 2009-06-18 Samsung Electronics Co., Ltd. Single crystalline graphene sheet and process of preparing the same

Also Published As

Publication number Publication date
WO2012002666A2 (en) 2012-01-05

Similar Documents

Publication Publication Date Title
WO2010045538A3 (en) Methods and apparatus for rapidly responsive heat control in plasma processing devices
WO2012008789A3 (en) Method for producing graphene at a low temperature, method for direct transfer of graphene using same, and graphene sheet
WO2013016191A3 (en) Methods and apparatus for the deposition of materials on a substrate
WO2012150763A3 (en) Method for manufacturing high quality graphene using continuous heat treatment chemical vapor deposition method
WO2011094143A3 (en) Apparatus for controlling temperature uniformity of a showerhead
WO2008078503A1 (en) Film forming apparatus and method of forming film
WO2012118947A3 (en) Apparatus and process for atomic layer deposition
WO2012071163A3 (en) Composite removable hardmask
WO2012125275A3 (en) Apparatus for monitoring and controlling substrate temperature
DE602006007530D1 (en) Hybrid plasma alto gas spraying method and apparatus
WO2014110446A3 (en) Method and system for graphene formation
TW200943381A (en) Thermal reactor with improved gas flow distribution
WO2011156749A3 (en) Graphene deposition
JP2010161350A5 (en) Semiconductor device manufacturing method and substrate processing apparatus
MX2015007801A (en) Chemical vapor deposition of fluorocarbon polymers.
WO2011100722A3 (en) Induction for thermochemical processes, and associated systems and methods
WO2011126637A3 (en) Method and apparatus for removing glass soot sheet from substrate
WO2012002666A3 (en) Graphene manufacturing apparatus and method
WO2014018036A3 (en) Apparatus and method of operating an injector for an exhaust gas aftertreatment apparatus
WO2012134070A3 (en) Gas-injection apparatus, atomic layer deposition apparatus, and atomic layer deposition method using the apparatus
WO2011090260A3 (en) Device for continuously manufacturing activated carbon
WO2012112334A3 (en) Method of operating filament assisted chemical vapor deposition system
WO2005113854A3 (en) Apparatus and methods of making nanostructures by inductive heating
JP2012222157A5 (en)
WO2008136260A1 (en) Ti-film formation method

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180032694.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11801073

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13807360

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 11801073

Country of ref document: EP

Kind code of ref document: A2