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WO2012002666A2 - Appareil et procédé pour fabriquer du graphène - Google Patents

Appareil et procédé pour fabriquer du graphène Download PDF

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Publication number
WO2012002666A2
WO2012002666A2 PCT/KR2011/004524 KR2011004524W WO2012002666A2 WO 2012002666 A2 WO2012002666 A2 WO 2012002666A2 KR 2011004524 W KR2011004524 W KR 2011004524W WO 2012002666 A2 WO2012002666 A2 WO 2012002666A2
Authority
WO
WIPO (PCT)
Prior art keywords
gas
substrate
graphene
heating
deposition chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/004524
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English (en)
Other versions
WO2012002666A3 (fr
Inventor
Dong-Kwan Won
Seung-Min Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hanwha Vision Co Ltd
Original Assignee
Samsung Techwin Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110026455A external-priority patent/KR101828528B1/ko
Application filed by Samsung Techwin Co Ltd filed Critical Samsung Techwin Co Ltd
Priority to CN201180032694.1A priority Critical patent/CN102958832B/zh
Priority to US13/807,360 priority patent/US20130122220A1/en
Publication of WO2012002666A2 publication Critical patent/WO2012002666A2/fr
Publication of WO2012002666A3 publication Critical patent/WO2012002666A3/fr
Anticipated expiration legal-status Critical
Priority to US14/831,031 priority patent/US20150353362A1/en
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only

Definitions

  • the present invention relates to a graphene manufacturing apparatus and method of manufacturing graphene, and more particularly, to a graphene manufacturing apparatus and method of manufacturing graphene, whereby a large-size stable graphene can be economically manufactured.
  • graphite has a stacked structure of two-dimensional graphene sheets having a plate shape and formed by connecting carbon atoms in a hexagon. Recently, the properties of a graphite layer or a graphene sheet peeled off from among a plurality of graphene layers has been studied. As a result, it has been found that the graphene sheet has very useful properties highly different from those of existing materials.
  • the electron mobility of the graphene sheet has a high value between about 20,000 and about 50,000cm2/Vs.
  • the manufacturing yield of carbon nanotubes significantly decreases when the carbon nanotubes are synthesized and refined, so that, although the carbon nanotubes are synthesized by using an inexpensive material, the cost of a complete product is expensive whereas the cost of graphite is low.
  • the metallic and semiconductor properties vary according to their chiral properties and diameters, and although they have the same semiconductor properties, their bandgaps could be different.
  • the graphene sheet has very useful characteristics but it is difficult to repeatedly manufacture a large-size graphene sheet in an economical manner.
  • Methods of manufacturing a graphene sheet are classified into two types, i.e., a micro-mechanical method and a SiC crystal pyrolyzing method.
  • the micro-mechanical method involves adhering a Scotch tape to a graphite sample, peeling off the Scotch tape, and obtaining a graphene sheet on a surface of the Scotch tape which is peeled off from the graphite sample.
  • the peeled-off graphene sheet has an irregular number of layers and various shapes. Thus, it is impossible to obtain a large-size graphene sheet by using the micro-mechanical method.
  • the present invention provides a graphene manufacturing apparatus and method of manufacturing graphene in order to economically manufacture a large-size stable graphene.
  • the gas heating unit may include a gas chamber having a sealed space where the gas is heated; and a gas heater disposed in the gas chamber so as to apply heat to the gas.
  • the graphene manufacturing apparatus may further include a substrate heating unit disposed in the deposition chamber and applying heat to the substrate.
  • the substrate heating unit may heat the deposition chamber at a temperature lower than a heating temperature of the gas heating unit.
  • the graphene manufacturing apparatus may further include a pipe heating unit that heats the inlet pipe.
  • the graphene manufacturing apparatus may further include a substrate supplying unit including a first roller that supports a part of the substrate, and a second roller that supports the other part of the substrate, and continuously supplying the substrate so as to allow the substrate to pass through an inlet and an outlet of the deposition chamber.
  • a substrate supplying unit including a first roller that supports a part of the substrate, and a second roller that supports the other part of the substrate, and continuously supplying the substrate so as to allow the substrate to pass through an inlet and an outlet of the deposition chamber.
  • a method of manufacturing graphene including the operations of moving a substrate having a catalyst layer to a deposition chamber; supplying a gas comprising carbon to a gas chamber separately disposed from the deposition chamber; heating the gas in the gas chamber; and introducing the gas heated in the gas chamber into the deposition chamber, and synthesizing graphene on the substrate.
  • the operation of supplying the gas may include the operation of supplying an atmosphere gas together with a reaction gas comprising carbon.
  • the operation of synthesizing the graphene may include the operations of dividing the reaction gas including carbon and the atmosphere gas, and then introducing only the reaction gas into the deposition chamber.
  • a time and energy for heating the substrate, and a time and energy for heating the gas may be optimized according, so that energy consumption may be reduced.
  • FIG. 1 is a block diagram illustrating a graphene manufacturing apparatus according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional view of a substrate used in the graphene manufacturing apparatus of FIG. 1;
  • FIG. 3 is a cross-sectional view illustrating graphene synthesized on the substrate of FIG. 2;
  • FIG. 4 is a flowchart of a method of manufacturing graphene, according to an embodiment of the present invention.
  • FIG. 5 is a diagram illustrating a graphene manufacturing apparatus according to another embodiment of the present invention.
  • FIG. 1 is a block diagram illustrating a graphene manufacturing apparatus according to an embodiment of the present invention.
  • the gas heating unit 20 for heating the gas and the deposition chamber 50 for depositing graphene on a surface of the substrate 90 are separated. Accordingly, it is possible to reduce an effect on the deposition chamber 50 which is incurred due to a heating process performed in the gas heating unit 20 so as to analyze the gas including carbon. That is, a temperature for heating the substrate 90 in the deposition chamber 50 is less than a temperature for heating the gas in the gas heating unit 20, so that a damage of the substrate 90 may be prevented although the gas is heated at a high temperature so as to be analyzed.
  • the gas supplying unit 10 supplies a reaction gas (a source gas) that is a gas including carbon to the gas heating unit 20.
  • the reaction gas supplied by the gas supplying unit 10 is a compound including carbon, and the compound may include6 or less carbon atoms, 4 or less carbon atoms, or 2 or less carbon atoms.
  • the reaction gas may include at least one selected from the group consisting of carbon monoxide, carbon dioxide, ethane, ethylene, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadien, hexane, cyclohexane, benzene, and toluene.
  • a control valve 11 may be installed in a supply tube 10a connecting the gas supplying unit 10 and a gas chamber 21, so that the control valve 11 may control a flow of a gas supplied from the gas supplying unit 10 to the gas chamber 21.
  • graphene or "graphene sheet” used in the detailed description indicates sheet-shape graphene in which a plurality of carbon atoms are connected via a covalent bond and then form polycyclic aromatic molecules.
  • the carbon atoms connected via the covalent bond basically form a six-membered ring but may further include a five-membered ring and/or a seven-membered ring.
  • the graphene sheet is formed as a single layer of the carbon atoms connected via the covalent bond (generally, a sp2 bond).
  • the graphene sheet may have various structures that may vary according to content of the five-membered ring and/or the seven-membered ring which may be included in the graphene.
  • the gas heating unit 20 includes the gas chamber 21 containing a gas supplied from the gas supplying unit 10, and a gas heater 22 arranged in the gas chamber 21 so as to heat the gas chamber 21.
  • the deposition chamber 50 is manufactured by using quartz or a metal material such as stainless steel, and is a place where graphene is synthesized on the surface of the substrate 90.
  • the deposition chamber 50 is formed separate from the gas chamber 21 of the gas heating unit 20, and is connected to the gas chamber 21 via the inlet pipe 40.
  • a gas supply valve 41 is arranged in the introduction pipe 40 so as to control a supply of a heated gas from the gas chamber 21 to the deposition chamber 50.
  • the deposition chamber 50 has an inlet 51 through which the substrate 90 is supplied, and an outlet 52 from which the substrate 90 is discharged. Also, in order to open and close the inlet 51 and the outlet 52, covers 71 and 72 moving in an arrow direction are disposed in the deposition chamber 50.
  • a gas heated in the gas chamber 21 is supplied to the deposition chamber 50 and simultaneously the deposition chamber 50 is heated, and thus, the covers 71 and 72 close the inlet 51 and the outlet 52 so as to separate an atmosphere of the deposition chamber 50 from the outside.
  • the covers 71 and 72 operate to open the inlet 51 and the outlet 52 so that the substrate 90 may move while passing through the deposition chamber 50.
  • the atmosphere gas may be removed and then only a component containing carbon that is decomposed from the reaction gas may be filtered and supplied.
  • the reaction gas together with the atmosphere gas may be supplied to the deposition chamber 50.
  • the reaction gas including carbon is supplied to the deposition chamber 50, if the reaction gas is analyzed and simultaneously the deposition chamber 50 is heated at a temperature equal to or greater than about 1000°C so as to synthesize graphene on the substrate 90, a catalyst metal to be deposited on the surface of the substrate 90 is limited to a material having high heat resistance. Also, when the deposition chamber 50 is heated at a temperature equal to or greater than about 1000°C, the substrate 90 may be thermally damaged.
  • Heat sources to drive the gas heater 22 and the substrate heating unit 80 may include induction heating, radiant heat, a laser, IR, a microwave, plasma, ultraviolet (UV), surface plasmon heating, or the like.
  • the heat sources may be attached to the gas chamber 21 or the deposition chamber 50 and may function to increase a temperature in the gas chamber 21 or the deposition chamber 50 to a predetermined temperature.
  • the substrate 90 whereon graphene is synthesized may be continuously supplied to the deposition chamber 50 by a substrate supplying unit 63.
  • a roll-to-roll method is used.
  • the substrate supplying unit 63 includes a first roller 61 that rolls and supports a part of the substrate 90, and a second roller 62 that rolls and supports the other part of the substrate 90. Although not illustrated in FIG. 1, the first roller 61 and the second roller 62 may be rotated by a motor, a belt, or a chain.
  • the substrate 90 is continuously supplied to the deposition chamber 50 by the substrate supplying unit 63 so as to pass through the inlet 51 and the outlet 52.
  • FIG. 2 is a cross-sectional view of the substrate 90 used in the graphene manufacturing apparatus of FIG. 1.
  • the substrate 90 that is supplied to the deposition chamber 50 includes a base layer 91 and a catalyst layer 92 disposed on a surface of the base layer 91.
  • the base layer 91 may be formed of a material that is heat-resistant and has high adhesion to graphene. Alternatively, the base layer 91 itself may have such a characteristic or a material having such a characteristic may be coated on the base layer 91.
  • the material for the base layer 91 may be an inorganic substrate including a Si substrate, a glass substrate, a GaN substrate, a silica substrate or the like, or may be a metal substrate including Ni, Cu, W, or the like.
  • Examples of the material used in the base layer 91 may include SiO 2 , Si 3 N 4 , SiON, SIOF, BN, hydrogen silsesquiloxane (HSQ), xerogel, aero gel, poly naphthalene, amorphous carbon a-CF, SiOC, MSQ, black diamond, or the like.
  • HSQ hydrogen silsesquiloxane
  • the catalyst layer 92 disposed on the surface of the base layer 91 functions as a graphite catalyst and helps carbon components to combine with each other so as to form a hexagonal plate-shape structure, wherein the carbon components are included in the heated gas that is supplied from the gas chamber 21 to the deposition chamber 50.
  • the catalyst layer 92 may include one catalyst used to synthesize graphene, to induce carbonation reaction, or to manufacture carbon nanotubes.
  • the catalyst layer 92 may include at least one metal catalyst selected from the group consisting of nickel (Ni), cobalt (Co), ferrum (Fe), platinum (Pt), gold (Au), silver (Ag), aluminium (Al), chrome (Cr), copper (Cu), magnesium (Mg), manganese (Mn), molybdenum (Mo), rhodium (Rh), silicon (Si), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), palladium (Pd), yttrium (Y), and zirconium (Zr).
  • the catalyst layer 92 may be formed by depositing a metal catalyst on the base layer 91 by using a sputtering device, an e-beam evaporator, or the like.
  • the catalyst layer 92 may be formed in another manner.
  • the catalyst layer 92 may be directly prepared in the form of a metal thin film (e.g., a foil).
  • the base layer 91 formed of a silicon wafer material and including a SiO 2 layer may not be used.
  • a block layer may be previously coated on the surface of the base layer 91 so as to restrain an unnecessary reaction between the catalyst layer 92 and the base layer 91.
  • the block layer exists between the catalyst layer 92 and the base layer 91 so that the block layer may restrain a graphene forming efficiency from being decreased due to a reaction between the catalyst layer 92 and the base layer 91.
  • the block layer may include SiOx, TiN, Al 2 O 3 , TiO 2 , Si3N4, or the like, and may be formed on the base layer 91 by using a sputtering method or the like.
  • an activation process may be performed on the surface of the substrate 90.
  • FIG. 3 is a cross-sectional view illustrating graphene synthesized on the substrate 90 of FIG. 2.
  • the graphene sheet 93 is grown by separating carbon from the catalyst layer 92 and crystallizing the carbon by rapidly cooling the graphene sheet 93 at a cooling speed in the range of about 30°C/min to about 600°C/min.
  • the cooling process may be performed by cooling the deposition chamber 50, or may be performed in a separate place by moving the substrate 90 whereon graphene is formed outside the deposition chamber 50.
  • FIG. 4 is a flowchart of a method of manufacturing graphene, according to an embodiment of the present invention.
  • the method of manufacturing graphene in FIG. 4 involves moving a substrate having a catalyst layer to a deposition chamber (operation S100), supplying a gas including carbon to a gas chamber separately disposed from the deposition chamber (operation S110), analyzing the gas by heating the gas in the gas chamber (operation S120), introducing the gas analyzed in the gas chamber into the deposition chamber and then synthesizing graphene on the substrate (operations S130 and S140).
  • an atmosphere gas may be supplied together with the reaction gas.
  • the atmosphere gas may include an inert gas such as helium, argon, or the like, and a non-reaction gas including hydrogen for controlling a gas phase reaction by cleanly maintaining a surface of a metal catalyst clean.
  • the gas chamber may be heated in the range of about 300°C to about 2000°C.
  • the substrate may be heated in the range of about 300°C to about 1,000°C.
  • the substrate After the reaction gas including carbon is supplied to the deposition chamber, if the reaction gas is analyzed and simultaneously the deposition chamber is heated at a temperature equal to or greater than about 1000°C so as to synthesize graphene on the substrate, the substrate may be thermally damaged.
  • the deposition chamber and the gas chamber are separate from each other and are heated in different temperature ranges, so that the reaction gas including carbon may be efficiently analyzed, and simultaneously, graphene may be stably synthesized on a surface of the substrate.
  • an operation of cooling the substrate may be performed so as to grow graphene on the surface of the substrate by cooling the substrate.
  • FIG. 5 is a diagram illustrating a relation between configuring elements of a graphene manufacturing apparatus according to another embodiment of the present invention.
  • the graphene manufacturing apparatus of FIG. 5 includes a gas supplying unit 110 supplying a gas including carbon, a gas heating unit 120 heating the gas supplied from the gas supplying unit 110, a deposition chamber 150 in which a substrate 90 having a catalyst layer is disposed, and an inlet pipe 140 for introducing a gas which is heated and analyzed by the gas heating unit 120 to the deposition chamber 150.
  • the gas heating unit 120 in which the gas is heated is separate from the deposition chamber 150 so that it is possible to reduce an effect on the deposition chamber 150 due to a heating process performed so as to analyze the gas including carbon.
  • a quartz pipe 123 functioning as a passage for a gas to be heated may be disposed in the gas chamber 121.
  • An end 123a of the quartz pipe 123 passes through the gas chamber 121 and then is connected to the gas supplying unit 110, so that a gas supplied from the gas supplying unit 110 may enter the gas chamber 121.
  • the other end 123b of the quartz pipe 123 passes through the gas chamber 121 and then is connected to the inlet pipe 140, so that a gas heated in the gas chamber 121 may be supplied to the deposition chamber 150 via the inlet pipe 140.
  • the gas heater 122 may be a lamp that radiates heat.
  • the gas heater 122 may include a plurality of halogen lamps. The heat radiated from the gas heater 122 may rapidly heat the gas in the quartz pipe 123 up to a process temperature.
  • the gas heating unit 120 having the aforementioned structure functions as a rapid thermal processing (RTP) apparatus.
  • the RTP apparatus may achieve a desired effect in a high temperature condition and may perform a thermal treatment process for a short time period (in general, for several seconds to several minutes), so that the RTP apparatus may minimize impurities that are is unnecessarily diffused or oxides that are unnecessarily generated.
  • the gas chamber 121 may include a graphite material coated with pyrolitic boron nitride (PBN).
  • PBN pyrolitic boron nitride
  • the inlet pipe 140 is connected to each of the deposition chamber 150 and the gas chamber 121, and supplies the heated gas of the gas chamber 121 to the deposition chamber 150. In order to increase an insulation effect, a length of the inlet pipe 140 may be minimized. Also, the inlet pipe 140 includes an insulating unit 141 surrounding a portion of the inlet pipe 140.
  • a pipe heating unit 145 is disposed outside the inlet pipe 140 to heat the inlet pipe 140.
  • the pipe heating unit 145 includes a heater 142 heating the inlet pipe 140, and a power unit 143 supplying current to the heater 142.
  • a substrate heating unit 180 is disposed in the deposition chamber 150. Similar to the gas heating unit 120, the substrate heating unit 180 may be an RTP apparatus. That is, the substrate heating unit 180 may be a lamp that radiates heat, and thus may rapidly heat the substrate 90 by radiation heat.
  • the RTP apparatus may freely control a heating time and a cooling time, so that, by making the substrate heating unit 180 and the gas heating unit 120 separate from each other, it is possible to reduce a time taken to synthesize graphene. That is, a process temperature of the gas heating unit 120 may be set to be high so as to rapidly heat the gas, and the substrate heating unit 180 may heat the substrate 90 at a process temperature lower than the process temperature of the gas heating unit 120.
  • a time and energy for heating the substrate 90, and a time and energy for heating the gas may be optimized according, so that energy consumption may be reduced.
  • the present invention applies to a graphene manufacturing apparatus and method of manufacturing graphene, and more particularly, to a graphene manufacturing apparatus and method of manufacturing graphene, whereby a large-size stable graphene can be economically manufactured.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

L'appareil de fabrication de graphène selon l'invention comprend une unité d'alimentation en gaz fournissant un gaz contenant du carbone ; une unité de chauffage de gaz chauffant le gaz fourni par l'unité d'alimentation en gaz ; une chambre de dépôt dans laquelle se trouve un substrat comportant une couche catalytique ; et un tuyau d'admission introduisant le gaz provenant de l'unité de chauffage de gaz dans la chambre de dépôt. La température de la chambre de dépôt est réglée à une température inférieure à la température de l'unité de chauffage de gaz, ce qui permet un plus large choix parmi les métaux catalytiques à utiliser dans la couche catalytique et minimise l'endommagement du substrat provoqué par une température élevée.
PCT/KR2011/004524 2010-06-28 2011-06-22 Appareil et procédé pour fabriquer du graphène Ceased WO2012002666A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201180032694.1A CN102958832B (zh) 2010-06-28 2011-06-22 石墨烯制造设备及方法
US13/807,360 US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2010-0061274 2010-06-28
KR20100061274 2010-06-28
KR1020110026455A KR101828528B1 (ko) 2010-06-28 2011-03-24 그래핀의 제조 장치 및 제조 방법
KR10-2011-0026455 2011-03-24

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US13/807,360 A-371-Of-International US20130122220A1 (en) 2010-06-28 2011-06-22 Graphene manufacturing apparatus and method
US14/831,031 Division US20150353362A1 (en) 2010-06-28 2015-08-20 Graphene manufacturing apparatus and method

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WO2012002666A2 true WO2012002666A2 (fr) 2012-01-05
WO2012002666A3 WO2012002666A3 (fr) 2012-05-31

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583340A (zh) * 2012-01-20 2012-07-18 中国科学院上海硅酸盐研究所 低温气相还原的高导电石墨烯材料及其制备方法
TWI457277B (zh) * 2012-08-10 2014-10-21 Nat Univ Tsing Hua 石墨烯製備系統及方法
US9431487B2 (en) 2013-01-11 2016-08-30 International Business Machines Corporation Graphene layer transfer
WO2020187896A1 (fr) * 2019-03-18 2020-09-24 The 280 Company Système et procédé de fabrication d'une couche de graphène sur un substrat

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090026568A (ko) * 2007-09-10 2009-03-13 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101443222B1 (ko) * 2007-09-18 2014-09-19 삼성전자주식회사 그라펜 패턴 및 그의 형성방법
KR100923304B1 (ko) * 2007-10-29 2009-10-23 삼성전자주식회사 그라펜 시트 및 그의 제조방법
KR101344493B1 (ko) * 2007-12-17 2013-12-24 삼성전자주식회사 단결정 그라펜 시트 및 그의 제조방법

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102583340A (zh) * 2012-01-20 2012-07-18 中国科学院上海硅酸盐研究所 低温气相还原的高导电石墨烯材料及其制备方法
TWI457277B (zh) * 2012-08-10 2014-10-21 Nat Univ Tsing Hua 石墨烯製備系統及方法
US10060029B2 (en) 2012-08-10 2018-08-28 National Tsing Hua University Graphene manufacturing method
US9431487B2 (en) 2013-01-11 2016-08-30 International Business Machines Corporation Graphene layer transfer
US9859379B2 (en) 2013-01-11 2018-01-02 International Business Machines Corporation Graphene layer transfer
WO2020187896A1 (fr) * 2019-03-18 2020-09-24 The 280 Company Système et procédé de fabrication d'une couche de graphène sur un substrat

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