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WO2012094169A3 - Crystal ribbon fabrication with multi-component strings - Google Patents

Crystal ribbon fabrication with multi-component strings Download PDF

Info

Publication number
WO2012094169A3
WO2012094169A3 PCT/US2011/066842 US2011066842W WO2012094169A3 WO 2012094169 A3 WO2012094169 A3 WO 2012094169A3 US 2011066842 W US2011066842 W US 2011066842W WO 2012094169 A3 WO2012094169 A3 WO 2012094169A3
Authority
WO
WIPO (PCT)
Prior art keywords
string
ribbon
core
cover
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/066842
Other languages
French (fr)
Other versions
WO2012094169A2 (en
Inventor
Emanuel M. Sachs
James G. Serdy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
1366 Technologies Inc
Original Assignee
1366 Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 1366 Technologies Inc filed Critical 1366 Technologies Inc
Priority to TW100148841A priority Critical patent/TW201246269A/en
Publication of WO2012094169A2 publication Critical patent/WO2012094169A2/en
Publication of WO2012094169A3 publication Critical patent/WO2012094169A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Laminated Bodies (AREA)

Abstract

A string for growing ribbon crystal has a core and an outer cover, the cover composed of at least two different materials, chosen with the material of the core in amount and kind such that the CTE of the covered core matches in net, that of the silicon ribbon. The cover material is also chosen so that silicon readily wets significantly around the string, subtending an angle of at least about 55 degrees, up to a fully wetted string, resulting in a relatively thick strong ribbon adjacent the string, closer in thickness to the diameter of the sting. This prevents a thin, fragile ribbon near the string. For silicon ribbon, a cover may be an interspersed composition that is predominantly of silica, with some SiC. The core may also be composed of silica and SiC, in different proportions, and different geometry, or may be a single material, such as Carbon.
PCT/US2011/066842 2011-01-06 2011-12-22 Crystal ribbon fabrication with multi-component strings Ceased WO2012094169A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW100148841A TW201246269A (en) 2011-01-06 2011-12-27 Crystal ribbon fabrication with multi-component strings

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161430429P 2011-01-06 2011-01-06
US61/430,429 2011-01-06

Publications (2)

Publication Number Publication Date
WO2012094169A2 WO2012094169A2 (en) 2012-07-12
WO2012094169A3 true WO2012094169A3 (en) 2012-08-23

Family

ID=46457920

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/066842 Ceased WO2012094169A2 (en) 2011-01-06 2011-12-22 Crystal ribbon fabrication with multi-component strings

Country Status (2)

Country Link
TW (1) TW201246269A (en)
WO (1) WO2012094169A2 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050239382A1 (en) * 2003-10-09 2005-10-27 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20070100039A1 (en) * 2005-10-27 2007-05-03 Hancock Robert R Jr Non-reactive additives for fiber coatings
US20080213725A1 (en) * 2003-09-24 2008-09-04 Nobel Biocare Ab (Publ) Method and Arrangement for a Dental Installation
US20080290067A1 (en) * 2006-05-23 2008-11-27 Hiroshi Yoshida Microstructure, pattern medium and process for producing same
US20090061163A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon Crystal String for Increasing Wafer Yield
US20090149016A1 (en) * 2007-12-06 2009-06-11 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20090301386A1 (en) * 2007-06-14 2009-12-10 Evergreen Solar, Inc. Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface
US20100055412A1 (en) * 2008-09-03 2010-03-04 Evergreen Solar, Inc. String With Refractory Metal Core For String Ribbon Crystal Growth

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080213725A1 (en) * 2003-09-24 2008-09-04 Nobel Biocare Ab (Publ) Method and Arrangement for a Dental Installation
US20050239382A1 (en) * 2003-10-09 2005-10-27 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20070100039A1 (en) * 2005-10-27 2007-05-03 Hancock Robert R Jr Non-reactive additives for fiber coatings
US20080290067A1 (en) * 2006-05-23 2008-11-27 Hiroshi Yoshida Microstructure, pattern medium and process for producing same
US20090301386A1 (en) * 2007-06-14 2009-12-10 Evergreen Solar, Inc. Controlling Transport of Gas Borne Contaminants Across a Ribbon Surface
US20090061163A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon Crystal String for Increasing Wafer Yield
US20090061224A1 (en) * 2007-08-31 2009-03-05 Evergreen Solar, Inc. Ribbon Crystal String with Extruded Refractory Material
US7651768B2 (en) * 2007-08-31 2010-01-26 Evergreen Solar, Inc. Reduced wetting string for ribbon crystal
US20090149016A1 (en) * 2007-12-06 2009-06-11 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20100055412A1 (en) * 2008-09-03 2010-03-04 Evergreen Solar, Inc. String With Refractory Metal Core For String Ribbon Crystal Growth

Also Published As

Publication number Publication date
TW201246269A (en) 2012-11-16
WO2012094169A2 (en) 2012-07-12

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