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WO2012086959A3 - 프린팅 프로세스용 광경화성 수지 조성물 - Google Patents

프린팅 프로세스용 광경화성 수지 조성물 Download PDF

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Publication number
WO2012086959A3
WO2012086959A3 PCT/KR2011/009635 KR2011009635W WO2012086959A3 WO 2012086959 A3 WO2012086959 A3 WO 2012086959A3 KR 2011009635 W KR2011009635 W KR 2011009635W WO 2012086959 A3 WO2012086959 A3 WO 2012086959A3
Authority
WO
WIPO (PCT)
Prior art keywords
photo
resin composition
curable resin
printing process
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/009635
Other languages
English (en)
French (fr)
Other versions
WO2012086959A2 (ko
Inventor
송준용
신승협
최미경
이광영
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020110131502A external-priority patent/KR101917156B1/ko
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of WO2012086959A2 publication Critical patent/WO2012086959A2/ko
Publication of WO2012086959A3 publication Critical patent/WO2012086959A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0751Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

본 발명은 프린팅 프로세스 (Printing process) 용 광경화성 수지 조성물에 관한 것으로서, 구체적으로는 폴리실라잔 화합물을 포함하는 광경화성 수지 조성물에 관한 것이다. 본 발명에 따른 조성물은 폴리실라잔 화합물을 포함함으로써, 우수한 기판과의 접착력, 내열성, 내구성 (고온, 고압, 고습) 및 하부막 보호 특성을 나타내고 고온처리 후에도 높은 투과율 유지하므로, 미세패턴 및 보호막 형성시에 유용하게 사용될 수 있다.
PCT/KR2011/009635 2010-12-20 2011-12-14 프린팅 프로세스용 광경화성 수지 조성물 Ceased WO2012086959A2 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20100130666 2010-12-20
KR10-2010-0130666 2010-12-20
KR10-2011-0131502 2011-12-09
KR1020110131502A KR101917156B1 (ko) 2010-12-20 2011-12-09 프린팅 프로세스용 광경화성 수지 조성물

Publications (2)

Publication Number Publication Date
WO2012086959A2 WO2012086959A2 (ko) 2012-06-28
WO2012086959A3 true WO2012086959A3 (ko) 2012-10-18

Family

ID=46314582

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/009635 Ceased WO2012086959A2 (ko) 2010-12-20 2011-12-14 프린팅 프로세스용 광경화성 수지 조성물

Country Status (1)

Country Link
WO (1) WO2012086959A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6766266B2 (ja) * 2016-11-25 2020-10-07 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH リソグラフィ組成物、レジストパターンの形成方法および半導体素子の製造方法
CN110092873A (zh) * 2019-05-16 2019-08-06 广东工业大学 一种光敏树脂陶瓷及其立体光固化制备方法
GB2631490A (en) * 2023-06-28 2025-01-08 Qinetiq Ltd Methods for polymer materials
CN117736620A (zh) * 2023-12-13 2024-03-22 浙江奥首材料科技有限公司 一种半导体涂料组合物和光学半导体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005092099A (ja) * 2003-09-19 2005-04-07 Fuji Photo Film Co Ltd 硬化性樹脂組成物、及び光学物品、並びにそれを用いた画像表示装置
KR20070089721A (ko) * 2004-12-29 2007-08-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단일- 및 다중-광자 중합성 예비-세라믹 중합체 조성물
KR20080034983A (ko) * 2005-09-09 2008-04-22 도오꾜오까고오교 가부시끼가이샤 나노임프린트용의 막형성 조성물 및 패턴 형성 방법
KR20100063664A (ko) * 2008-12-03 2010-06-11 후지필름 가부시키가이샤 광 임프린트용 경화성 조성물 및 그것을 사용한 경화물의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005092099A (ja) * 2003-09-19 2005-04-07 Fuji Photo Film Co Ltd 硬化性樹脂組成物、及び光学物品、並びにそれを用いた画像表示装置
KR20070089721A (ko) * 2004-12-29 2007-08-31 쓰리엠 이노베이티브 프로퍼티즈 컴파니 단일- 및 다중-광자 중합성 예비-세라믹 중합체 조성물
KR20080034983A (ko) * 2005-09-09 2008-04-22 도오꾜오까고오교 가부시끼가이샤 나노임프린트용의 막형성 조성물 및 패턴 형성 방법
KR20100063664A (ko) * 2008-12-03 2010-06-11 후지필름 가부시키가이샤 광 임프린트용 경화성 조성물 및 그것을 사용한 경화물의 제조 방법

Also Published As

Publication number Publication date
WO2012086959A2 (ko) 2012-06-28

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