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WO2012077063A1 - Composition de polissage aqueuse et procédé de polissage mécano-chimique de substrats contenant un diélectrique en oxyde de silicium et des films en polysilicium - Google Patents

Composition de polissage aqueuse et procédé de polissage mécano-chimique de substrats contenant un diélectrique en oxyde de silicium et des films en polysilicium Download PDF

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Publication number
WO2012077063A1
WO2012077063A1 PCT/IB2011/055506 IB2011055506W WO2012077063A1 WO 2012077063 A1 WO2012077063 A1 WO 2012077063A1 IB 2011055506 W IB2011055506 W IB 2011055506W WO 2012077063 A1 WO2012077063 A1 WO 2012077063A1
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WIPO (PCT)
Prior art keywords
alkyl
cycloalkyl
groups
polishing composition
aryl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2011/055506
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English (en)
Inventor
Shyam Sundar Venkataraman
Eason Yu-Shen Su
Arend Jouke Kingma
Bastian Marten Noller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF China Co Ltd
BASF SE
Original Assignee
BASF China Co Ltd
BASF SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BASF China Co Ltd, BASF SE filed Critical BASF China Co Ltd
Priority to KR1020137017968A priority Critical patent/KR101919750B1/ko
Priority to SG2013038492A priority patent/SG190334A1/en
Priority to RU2013131395/05A priority patent/RU2588620C2/ru
Priority to EP11846454.4A priority patent/EP2649144A4/fr
Priority to US13/991,924 priority patent/US9524874B2/en
Priority to JP2013542655A priority patent/JP6096670B2/ja
Priority to CN201180058780XA priority patent/CN103249790A/zh
Publication of WO2012077063A1 publication Critical patent/WO2012077063A1/fr
Priority to IL226334A priority patent/IL226334B/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks

Definitions

  • the present invention is directed to a novel aqueous polishing composition which is particularly suitable for polishing semiconductor substrates containing silicon oxide dielectric and polysilicon films, optionally containing silicon nitride films.
  • the present invention is directed to a novel process for polishing substrates for manufacturing electrical, mechanical and optical devices, the said substrate materials containing silicon oxide and polysilicon films, optionally containing silicon nitride films.
  • CMP Chemical mechanical planarization or polishing
  • ICs integrated circuits
  • the technique typically applies CMP compositions or slurries containing abrasives and other additives as an active chemistry between a rotating substrate surface and a polishing pad under an applied load.
  • the CMP process couples a physical process such as abrasion with a chemical process such as oxidation or chelation. It is not desirable for the removal or polishing of substrate materials to be comprised of purely physical or purely chemical action, but rather the synergistic combination of both in order to achieve a fast uniform removal.
  • a planar, defect-free surface is obtai ned wh ich enables proper multi layer I C device fabrication by subsequent photolithography, patterning, etching and thin-film processing.
  • Shallow trench isolation is a specific CMP application which generally requires the selective removal of silicon dioxide to silicon nitride on a patterned wafer substrate.
  • etched trenches are overfilled with a dielectric material, e.g., silicon dioxide, which is polished using the silicon nitride barrier film as the stopping film.
  • the CMP process ends with clearing the silicon dioxide from the barrier film while minimizing the removal of exposed silicon nitride and trench silicon dioxide.
  • the oxide-to-nitride selectivity should not be too high, in order to avoid dishing, and other damages and defects in the globally planarized , heterogeneous, patterned surface containing silicon dioxide, silicon nitride and polysilicon areas.
  • the silicon nitride-to-polysilicon selectivity should also be high.
  • Ceria-based CMP slurries have received considerable attention in STI applications because of their ability to achieve a comparatively high oxide-to-nitride selectivity due to the high chemical affinity of ceria to silicon dioxide which is also referred to in the art as the chemical tooth action of ceria.
  • oxide-to-polysilicon selectivity of ceria-based CMP slurries must be improved by additives which "tailor" the selectivity.
  • the American patent application US 2002/0034875 A1 and the American patent US 6,626,968 B2 disclose a ceria-based CMP slurry containing surfactants, pH adjusting agents such as potassium hydroxide, sulfuric acid , nitric acid , hydrochloric acid or phosphoric acid, and polymers containing a hydrophilic functional group and a lipophilic functional group such as polyvinyl methyl ether (PVME), polyethylene glycol (PEG), polyoxyethylene 23 lauryl ether (POLE), polypropanoic acid (PPA), polyacrylic acid (PM), and polyether glycol bis ether (PEGBE).
  • PVME polyvinyl methyl ether
  • PEG polyethylene glycol
  • POLE polyoxyethylene 23 lauryl ether
  • PPA polypropanoic acid
  • PM polyacrylic acid
  • PEGBE polyether glycol bis ether
  • the American patent US 6,645,051 B2 discloses a ceria-based CMP slurry for polishing memory hard disk substrates containing at least one nonionic surfactant selected from the group consisting of polyoxyethylene polyoxypropylene alkyl ethers and polyoxyethylene polyoxypropylene copolymers.
  • the US patent application US 2003/0228762 A1 discloses a CMP slurry for polishing substrates containing a low-k dielectric film, the said CMP slurry containing abrasive particles selected from the group consisting of alumina, silica, titania, ceria, zirconia, germania, magnesia, and co-formed products thereof; and - amphiphilic nonionic surfactants having at least one lipophilic head group and at least one hydrophilic tail group.
  • suitable head groups include polysiloxanes, tetra- Ci-4-alkyldecynes, saturated or partially unsaturated Ce-30 alkyl groups, polyoxypropylene groups, Ce-12 alkyl phenyl or alkyl cyclohexyl groups, and polyethylene groups.
  • Suitable tail groups include polyoxyethylene groups.
  • the amphiphilic nonionic surfactant can be selected from the group consisting of polyoxyethylene alkyl ethers or esters.
  • the American patent application US 2006/0124594 A1 discloses a ceria-based CMP slurry having a viscosity of at least 1 .5 cP and comprising a viscosity increasing agent including a nonionic polymer such as polyethylene glycol (PEG).
  • the ceria-based CMP slurry is said to have a high oxide-to-nitride selectivity and to cause a low within-wafer non-uniformity WIWNU.
  • the American patent application US 2006/0216935 A1 discloses a ceria-based CMP slurry comprising protein, lysine and/or arginine and a pyrrolidone compounds such as polyvinylpyrrolidone (PVP), N-octyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-hydroxyethyl-2- pyrrolidone, N-cyclohexyl-2-pyrrolidone, N-butyl-2-pyrrolidone, N-hexyl-2-pyrrolidone, N- decyl-2-pyrrolidone, N-octadecyl-2-pyrrolidone, and N-hexadecyl-2-pyrrolidone.
  • PVP polyvinylpyrrolidone
  • N-octyl-2-pyrrolidone N-ethyl-2-pyrrolidone
  • the ceria- based CMP slurry can furthermore contain dispersing agents like polyacrylic acid, glycols and polyglycols. Specific examples use proline, polyvinylpyrrolidone or N-octyl-2- pyrrolidone, PPO/PEO blockcopolymers, and glutaraldehyde.
  • the ceria-based CMP slurry is believed to not aggressively remove trench silicon dioxide thereby allowing for extended polishing beyond the endpoint without substantially increasing the minimum step height.
  • the American patent application US 2007/0077865 A1 discloses a ceria-based CMP slurry containing polyethyleneoxide/polypropyleneoxide copolymers preferably from the PluronicTM family sold by BASF.
  • the ceria-based CMP slurry can furthermore contain amino alcohols such as 2-dimethylamino-2-methyl-1 -propanol (DMAMP), 2-amino-2-ethyl- 1 -p ro p a n o l (A M P ) , 2-(2-aminoethylamino)ethanol, 2-(isopropylamino)ethanol, 2- (methylamino)ethanol, 2-(diethylamino)ethanol, 2-(2-dimethylamino)ethoxy)ethanol, 1 ,1 '- [[3-(dimethylamino)propyl]imino]-bis-2-propanol, 2-(2-butylamino)ethanol, 2-(tert- but
  • the ceria-based CMP slurry may furthermore contain quaternary ammonium compounds like tetra methyla m m on i u m hyd roxi de , fi l m form i ng agents such as a l kyl a m i nes , alkanolamines, hydroxyl amines, phosphate esters, sodium lauryl sulfate, fatty acids, polyacrylates, polymethacrylates, polyvinylphosphonates, polymalates, polystyrene sulfonate, polyvinyl sulfate, benzotriazole, triazole, and benzoimidazole, and complexing agents such as acetylacetone, acetates, glycolates, lactates, gluconates, gallic acid , oxalates, phthalates, citrates, succinates, tartates, malates, ethylenediaminetetraacetic acid, ethylene glyco
  • a ceria-based CMP slurry comprising a polysilicon polishing inhibitor which is selected from water-soluble polymers having a N-monosubstituted or N,N-di-substituted skeleton substituted by any members selected from the group consisting of acrylamide, methacrylamide and alpha- substituted derivatives thereof; polyethylene glycols; polyvinylpyrrolidones; alkoxylated linear aliphatic alcohols and ethyleneoxide adducts of acetylene-based diols.
  • a polysilicon polishing inhibitor which is selected from water-soluble polymers having a N-monosubstituted or N,N-di-substituted skeleton substituted by any members selected from the group consisting of acrylamide, methacrylamide and alpha- substituted derivatives thereof; polyethylene glycols; polyvinylpyrrolidones; alkoxylated linear aliphatic alcohols and ethyleneoxide a
  • the ceria- based CMP slurry may contain additional water-soluble polymers such as polysaccharides like alginic acid , pectinic acid, carboxymethylcellulose, agar, curdlan, and pullulan; polycarboxylic acids such as polyaspartic acid, polyglutamic acid, polylysine, polymalic acid, polymethacrylic acid, polyimide acid, polymaleic acid, polyitaconic acid, polyfumaric acid , poly(p-styrene carboxylic acid), polyacrylic acid, polyacrylamide, amino polyacrylamide, polyglyoxalic acid and their salts; and vinyl polymers such as polyvinyl alcohol, and polyacrolein.
  • the ceria-based CMP slurry is said to have a high silicon dioxide over polysilicon selectivity.
  • the American patent applications US 2008/0085602 A1 and US 2008/012491 3 A1 disclose a ceria-based CMP slurry containing 0.001 to 0.1 % by weight of the nonionic surfactant selected from ethyleneoxide-propyleneoxide-ethyleneoxide triblock copolymers and polyacrylic acid as dispersing agent.
  • the ceria-based slurry he said to have a high silicon dioxide and silicon nitride over polysilicon selectivity.
  • the American patent application US 2008/0281486 discloses a ceria-based CMP slurry containing nonionic surfactants having a hydrophilic-lipophilic balance (HLB) value in the range of from 12 to 17.
  • the nonionic surfactants are selected from the group consisting of polyoxyethylene lauryl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether, polyoxyethylene sorbitan monolaurate, polyoxyethylene isooctyl phenyl ether and mixtures thereof.
  • HLB hydrophilic-lipophilic balance
  • the prior art ceria-based CMP slurries may have a satisfactory oxide-to- polysilicon selectivity and may yield polished wafers having a good global and local planarity as exemplified by the within-wafer nonuniformity (WIWNU) and the wafer-to- wafer nonuniformity (WTWNU), the ever decreasing dimensions of the IC architectures, in particular ICs with LSI (large-scale integration) or VLSI (very-large-scale integration), necessitate the constant improvement of the ceria-based CMP slurries in order to and meet the ever increasing technical and economical demands of the manufacturers of integrated circuit devices.
  • WIWNU within-wafer nonuniformity
  • WTWNU wafer-to- wafer nonuniformity
  • the Japanese patent application JP 2001 -240850 A discloses a CMP slurry containing a alumina, zirconia or silicon carbide as the abrasive, an alkylene oxide-ethyleneoxide block or ra nd om copolymer as d ispersi ng agent a nd sod i u m phos phate or sod i u m polyphosphate as an "anti-rust".
  • the alkylene oxide-ethyleneoxide copolymer is of the general formula: Z-[ ⁇ (AO) n /(EO) m ⁇ R 1 ]p, wherein the indices in the variables have the following meaning:
  • n integer with an average value of 10 to 200;
  • R 1 hydrogen atom, alkyl group having 1 to 18 carbon atoms or acyl group having 2 to 24 carbon atoms.
  • the CMP slurry is used for polishing silicon wafers, glass, aluminum, ceramic, synthetic silica, quartz and sapphire. None is disclosed about silicon dioxide and/or silicon nitride over polysilicon selectivities.
  • the ceria-based CMP slurry contains at least one anionic phosphate dispersing agent.
  • the ceria-based CMP slurry exhibits an excellent oxide-to-polysilicon selectivity and a high nitride-to-polysilicon selectivity coupled with an advantageous oxide- to-nitride selectivity.
  • silica-based CMP slurry containing at least one amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water dispersible surfactants having at least one lipophilic group (b1 ) selected from the group consisting of branched alkyl groups having 5 to 20 carbon atoms; and at least one hydrophilic group (b2) selected from the group consisting of polyoxyalkylene groups comprising oxyethylene monomer units (b21 ) and at least one type of substituted oxyalkylene monomer units (b22) wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl- cycloalkyl , alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; the said polyoxyalkylene group containing the monomer units (b21 ) and (b22) in random, alternating, gradient and/or
  • a novel aqueous polishing composition in particular a novel chemical mechanical polishing (CMP) composition, especially a novel ceria-based CMP slurry, which no longer exhibits the disadvantages and drawbacks of the prior art polishing compositions.
  • CMP chemical mechanical polishing
  • the novel aqueous polishing composition in particular the novel chemical mechanical polishing (CMP) composition, especially the novel ceria-based CMP slurry, should exhibit a significantly improved oxide-to-polysilicon selectivity and yield polished wafers having an excellent global and local planarity as exemplified by the within-wafer nonuniformity (WIWNU) and the wafer-to-wafer nonuniformity (WTWNU). Therefore, they should be excellently suited for manufacturing IC architectures, in particular ICs with LSI (large-scale integration) or VLSI (very-large-scale integration), having structures with dimensions below 50 nm.
  • CMP chemical mechanical polishing
  • novel ceria-based CMP slurries should also exhibit an advantageous nitride-to-polysilicon selectivity and an advantageous oxide-to-nitride selectivity.
  • novel aqueous polishing composition in particular the novel chemical mechanical polishing (CMP) composition and especially the novel ceria-based CMP slurry should not only be exceptionally useful in the field of integrated circuit devices, but should also be most efficiently and advantageously useful in the fields of manufacturing other electrical devices such as liquid crystal panels, organic electroluminescent panels, printed circuit boards, micro machines, DNA chips, micro plants and magnetic heads; as well as high precision mechanical devices and optical devices, in particular, optical glasses such as photo-masks, lenses and prisms, inorganic electro-conductive films such as indium tin oxide (ITO), optical integrated circuits, optical switching elements, optical waveguides, optical monocrystals such as the end faces of optical fibers and scintillators, solid laser monocrystals, sapphire substrates for blue laser LEDs, semiconductor monocrystals, and glass substrates for magnetic disks.
  • optical glasses such as photo-masks, lenses and prisms
  • inorganic electro-conductive films such as indium tin oxide (ITO),
  • R hydrogen atom or monovalent or polyvalent organic residue, except linear and branched alkyl groups having 5 to 20 carbon atoms;
  • (B1 ) block consisting essentially of oxyethylene monomer units
  • (B2) block consisting essentially of at least one type of substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of at least two methyl groups, alkyl groups having at least two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups; and
  • Y hydrogen atom or monovalent organic residue, except linear and branched alkyl groups having 5 to 20 carbon atoms; with the proviso that when (B) contains more than one block (B1 ) or (B2) two blocks of the same type are separated from each other by a block of the other type.
  • composition of the invention novel aqueous polishing composition is referred to as the "composition of the invention”.
  • the composition of the invention exhibited a significantly improved oxide-to-polysilicon selectivity and yield polished wafers having an excellent global and local planarity as exemplified by the within-wafer nonuniformity (WIWNU) and the wafer-to-wafer nonuniformity (WTWNU). Therefore, they were excellently suited for manufacturing IC architectures, in particular ICs with LSI (large-scale integration) or VLSI (very-large-scale integration), having structures with dimensions below 50 nm.
  • WIWNU within-wafer nonuniformity
  • WTWNU wafer-to-wafer nonuniformity
  • composition of the invention also exhibited an advantageous nitride- to-polysilicon selectivity coupled with an advantageous oxide-to-nitride selectivity.
  • composition of the invention was stable during prolonged transport and storage, which stability significantly improved the logistics and the process management.
  • composition of the invention was not only exceptionally useful in the field of integrated circuit devices, but was also most efficiently and advantageously useful in the fields of manufacturing other electrical devices such as liquid crystal panels, organic electroluminescent panels, printed circuit boards, micro machines, DNA chips, micro plants and magnetic heads; as well as high precision mechanical devices and optical devices, in particular, optical glasses such as photo-masks, lenses and prisms, inorganic electro-conductive films such as indium tin oxide (ITO), optical integrated circuits, optical switching elements, optical waveguides, optical monocrystals such as the end faces of optical fibers and scintillators, solid laser monocrystals, sapphire substrates for blue laser LEDs, semiconductor monocrystals, and glass substrates for magnetic disks.
  • ITO indium tin oxide
  • the composition of the invention was most particularly useful for the process of the invention.
  • the process of invention could be most advantageously used for polishing, in particular chemically mechanically polishing, substrate materials for electrical devices such as liquid crystal panels, organic electroluminescent panels, printed circuit boards, micro machines, DNA chips, micro plants and magnetic heads; as well as substrate materials for high precision mechanical devices and optical devices, in particular, optical glasses such as photo-masks, lenses and prisms, inorganic electro-conductive films such as indium tin oxide (ITO), optical integrated circuits, optical switching elements, optical waveguides, optical monocrystals such as the end faces of optical fibers and scintillators, solid laser monocrystals, sapphire substrates for blue laser LEDs, semiconductor monocrystals, and glass substrates for magnetic disks.
  • substrate materials for electrical devices such as liquid crystal panels, organic electroluminescent panels, printed circuit boards, micro machines, DNA chips, micro plants and magnetic heads
  • substrate materials for high precision mechanical devices and optical devices in particular, optical glasses such as photo-
  • the process of the invention was excellently suited for polishing semiconductor wafers containing silicon oxide dielectric and polysilicon films and optionally containing silicon nitride films.
  • the process of the invention yielded polished wafers having an excellent global and local planarity and balance without dishing, cupping or hotspots as exemplified by the within-wafer nonuniformity (WIWNU) and the wafer-to- wafer nonuniformity (WTWNU). Therefore, they were excellently suited for manufacturing IC architectures, in particular ICs with LSI (large-scale integration) or VLSI (very-large- scale integration), having structures with dimensions below 50 nm.
  • LSI large-scale integration
  • VLSI very-large- scale integration
  • composition of the invention is an aqueous composition. This means that it contains water, i n particular ultrapure water, as the main solvent and dispersing agent. Nevertheless, the composition of the invention may contain at least one water-miscible organic solvent, however, only in minor amounts that do not change the aqueous nature of the composition of the invention.
  • the composition of the invention contains water in amounts of from 60 to 99.95% by weight, more preferably 70 to 99.9% by weight, even more preferably 80 to 99.9% by weight and, most preferably, 90 to 99.9% by weight, the weight percentages being based on the complete weight of the composition of the invention.
  • Water-soluble means that the relevant component or ingredient of the composition of the invention can be dissolved in the aqueous phase on the molecular level.
  • Water-dispersible means that the relevant component or ingredient of the composition of the invention can be dispersed in the aqueous phase and forms a stable emulsion or suspension.
  • the first essential ingredient of the composition of the invention is at least one, preferably one, type of abrasive particles (A) containing or consisting of ceria.
  • the average particle size of the abrasive particles (A) can vary broadly and, therefore, can be adjusted most advantageously to the particular requirements of a given composition and process of the invention.
  • the average particle size as determined by dynamic laser light scattering is in the range of from 1 to 2000 nm, preferably 1 to 1000 nm, more preferably 1 to 750, most preferably 1 to 500 nm, particularly 10 to 250 nm, for example 80 to 200 nm.
  • the particle size distribution of the abrasive particles (A) can be monomodal, bimodal or multimodal.
  • the particle size distribution is monomodal in order to have an easily reproducible property profile of the abrasive particles (A) and easily reproducible conditions during the process of the invention.
  • the particle size distribution of the abrasive particles (A) can be narrow or broad.
  • the particle size distribution is narrow with only small amounts of small particles and large particles in order to have an easily reproducible property profile of the abrasive particles (A) and easily reproducible conditions during the process of the invention.
  • the abrasive particles (A) can have various shapes. Thus, they may be of one or essentially one type of shape. However, it also possible that the abrasive particles (A) have different shapes. In particular, two types of differently shaped abrasive particles (A) may be present i n a given composition of the invention .
  • the shapes themselves, they can be cubes, cubes with chamfered edges, octahedrons, icosahedrons, nodules and spheres with or without protrusions or indentations. Most preferably, the shape is spherical with no or only very few protrusions or indentations. This shape, as a rule, is preferred because it usually increases the resistance to the mechanical forces the abrasive particles (A) are exposed to during a CMP process.
  • the abrasive particles (A) which contain ceria can contain minor amounts of other rare earth metal oxides.
  • the abrasive particles (A) which consist of ceria can have a hexagonal, cubic or face- centered cubic crystal lattice.
  • the abrasive particles (A) which contain ceria are composite particles (A) comprising a core containing or consisting of at least one other abrasive particulate material which is different from ceria, in particular alumina, silica, titania, zirconia, zinc oxide, and mixtures thereof.
  • Such composite particles (A) are known, for example, from WO 2005/035688 A1 , US 6,1 10,396, US 6,238,469 B1 , US 6,645,265 B1 , K. S. Choi et al., Mat. Res. Soc. Symp. Proa, Vol. 671 , 2001 Materials Research Society, M5.8.1 to M5.8.10, S.-H. Lee et al., J. Mater. Res., Vol. 17, No. 10 (2002), pages 2744 to 2749, A. Jindal et al., Journal of the Electrochemical Society, 1 50 (5), G314-G31 8 (2003) , Z. Lu, Journal of Materials Research, Vol. 18, No. 10, October 2003, Materials Research Society, or S. Hedge et al., Electrochemical and Solid-State Letters, 7 (12), G316-G318 (2004).
  • the composite particles (A) are raspberry-type coated particles comprising a core selected from the group consisting of alumina, silica titania, zirconia, zinc oxide, and mixtures thereof with a core size of from 20 to 100 nm wherein the core is coated with ceria particles having a particle size below 10 nm.
  • the amount of the abrasive particles (A) used in the composition of the invention can vary broadly and, therefore, can be adjusted most advantageously to the particular requirements of a given composition and process of the invention.
  • the composition of the invention contains 0.005 to 10% by weight, more preferably, 0.01 to 8% by weight and, most preferably, 0.01 to 6% by weight of the abrasive particles (A), the weight percentages being based on the complete weight of the composition of the invention.
  • the second essential ingredient of the composition of the invention is at least one, preferably one, amphiphilic nonionic surfactant (B) which is selected from the group consisting of water-soluble and water-dispersible, preferably water-soluble, linear and branched, preferably linear, polyoxyalkylene blockcopolymers of the general formula I:
  • the indices m and n are independently of each other integers equal to or greater than 1 , preferably, integers of from 1 to 10, more preferably, 1 to 5 and, most preferably, 1 to 3.
  • the index p of the general formula I is an integer equal to or greater than 1 , preferably, integers of from 1 to 100, more preferably, 1 to 50, even more preferably, 1 to 25 and, most preferably, 1 to 10.
  • variable R stands for a hydrogen atom or a monovalent or polyvalent organic residue, except linear and branched alkyl groups having 5 to 20 carbon atoms.
  • the monovalent or polyvalent organic residue R is selected from the group consisting of alkyl groups having 1 to 4 and 21 to 30 carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups.
  • the monovalent or polyvalent organic residues R are derived from monohydroxy and polyhydroxy compounds R'.
  • Suitable monohydroxy compounds R' are methanol, ethanol, propanol, isopropanol, n-, sec- and tert-butanol, monoalcohols derived from linear and branched heneicosane docosane tricosane tetracosane pentacosane, hexacosane, heptacosane, octacosane, nonacosane and triacontanne, cyclohexanol benzyl alcohol phenol and phenols having an alkyl group of 4 to 16 carbon atoms in their 4-position.
  • Suitable dihydroxy compounds R' are ethylene glycol, propylene glycol, butylene glycol, pentylene glycol, hexylene glycol, diethylene glycol, triethylene glycol, dipropylene glycol, tripropylene glycol, ethylene propylene glycol, diethylene propylene glycol, ethylene dipropylene glycol, 1 ,2-, 1 ,3- and 1 ,4-dihydroxy cyclohexane and benzene and bisphenol A and F.
  • Suitable trihydroxy compounds R' are glycerol, 1 ,2,3-trihydroxy-n-butane, trimethylolpropane, 1 ,2,3-, 1 ,2,4- and 1 ,3,5-trihydroxy cyclohexane and benzene.
  • suitable polyhydroxy compounds R' are pentaerythritol, 1 ,2,3,4-, 1 ,2,3,5- and 1 ,2,4,5-tetrahydroxy cyclohexane and benzene, polyvinyl alcohols, poly(hydroxystyrenes) alditols, cyclitols, carbohydrates and dimers and oligomers of glycerol, trimethylolpropane, pentaerythritol, alditols and cyclitols.
  • alditols R' examples include tetritols, pentitols, hexitols, heptitols, and octitols, in particular, erythritol, threitol, arabinitol, ribitol, xylitol, galactitol, mannitol, glucitol, allitol, altritol and iditol.
  • dimers R' are dimers of glycerol, trimethylolpropane, erythritol, threitol and pentaerythritol, maltitol, isomalt and lactitol, in particular, tri-, tetra-, penta-, hexa-, hepta-, octa-, nona-, deca-, undeca- and dodecaglycerol, -trimethylolpropane, - erythritol, -threitol and -pentaerythritol.
  • Suitable cyclitols R' are 1 ,2,3,4, 5-pentahydroxycyclohexane and inositols, in particular myo-, scyllo-, muco-, chiro-, neo-, alio-, epi- and cis-inositol.
  • Suitable monosaccharides R' are allose, altrose, glucose, mannose, idose, galactose and talose.
  • the residues R other than a hydrogen atom can carry at least one inert substituent.
  • "Inert” means that the substituents do not initiate the polymerization of ethylene oxide and the a l kyl ene oxi d es a nd undesirable reactions such as the decomposition and/or sedimentation of components of the composition of the invention upon prolonged storage and during the process of the invention.
  • Suitable inert substituents are halogen atoms, in particular, fluorine and chlorine atoms, nitro groups, nitrile groups and alkyl, cycloalkyl and aryl groups linked with the residue R via oxygen or sulfur atoms, carboxy groups, sulfoxy groups, sulfo groups, carboxylic, sulfonic and phosphonic acid ester groups or urethane groups.
  • the inert substituents are used in such amounts that they do not adversely affect the hydrophilic-lipophilic balance (HLB) value of the surfactant (B).
  • the substituents do not carry such inert substituents.
  • the residue R is a hydrogen atom.
  • amphiphilic nonionic surfactant (B) of the general formula I contains of at least one block (B1 ) and at least one block (B2), with the proviso that when (B) contains more than one block (B1 ) and (B2) two blocks of the same type are separated from each other by a block of the other type.
  • amphiphilic nonionic surfactant (B) can contain various general blocklike structures such as
  • the amphiphilic nonionic surfactant (B) contains the general blocklike structures B1 -B2, B1 -B2-B1 or B2-B1-B2.
  • the block (B1 ) consists essentially of oxyethylene monomer units. "Consisting essentially of” means that the block (B1 ) consists entirely of oxyethylene monomer units or contains minor amounts of oxypropylene monomer units and/or oxyalkylene monomer units, i.e., the monomer units of the blocks (B2). "Minor amounts” means that the concentration of the monomer units other than the oxyethylene monomer units is so low that the chemical and physicochemical properties, in particular the hydrophilic nature, of the block (B1 ) caused by the oxyethylene monomer units are not negatively affected but advantageously modified.
  • the average degree of the polymerization of the block (B1 ) can vary broadly and, therefore, can be adapted most advantageously to the particular requirements of a given composition and process of the invention.
  • the average degree of polymerization is in the range of from 5 to 100, more preferably, 5 to 75 and, most preferably, 5 to 50.
  • the block (B2) consists essentially of at least one, preferably one, type of substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of at least two methyl groups, alkyl groups having at least two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups.
  • Consisting essentially of means that the block (B2) consists entirely of the said oxyalkylene monomer units or contains minor amounts of oxypropylene and/or oxyethylene monomer units.
  • Minor amounts means that the concentration of the oxyethylene and/or oxypropylene monomer units is so low that the chemical and physicochemical properties, in particular the lipophilic nature, of the block (B2) caused by the oxyalkylene monomer units are not negatively affected but advantageously modified.
  • the oxyalkylene monomer units of the block (B2) are derived from substituted oxiranes wherein the substituents are selected from the group consisting of at least two methyl groups and alkyl groups having at least two carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups.
  • the substituents are selected from the group consisting of at least two methyl groups, alkyl groups having 2 to 10 carbon atoms, cycloalkyl groups having 5 to 10 carbon atoms in spirocyclic, exocyclic and/or annealed configuration, aryl groups having 6 to 10 carbon atoms, alkyl-cycloalkyl groups having 6 to 20 carbon atoms, alkyl-aryl groups having 7 to 20 carbon atoms, cycloalkyl-arylgroup 1 1 to 20 carbon atoms and alkyl- cycloalkyl-aryl groups having 12 to 30 carbon atoms.
  • alkyl groups are two methyl groups and ethyl, propyl, isopropyl, n- butyl , sec-butyl, tert-butyl, n-pentyl, 2,2-dimethylprop-1 -yl, n-hexyl, 2-, 3- and 4- methylpent-1 -yl, 2,2- and 3,3-dimethylbut-1 -yl, n-heptyl, 2,3-dimethylpent-1 -yl, 2,3,3- trimethylbut-1 -yl, n-octyl, isooctyl, 2-ethylhexyl, n-nonyl, 2-ethyl-3,4-dimethylpent-1 -yl, and n-decyl; preferably, methyl, ethyl, propyl, isopropyl, n-butyl, n-pentyl, and n-hexyl groups
  • Suitable cycloalkyl groups are cyclopentyl, cyclohexyl, cyclopentane-1 ,1 -diyl, cyclopentane-1 ,2-diyl, cyclohexane-1 ,1 -diyl, and cyclohexane-1 ,2-diyl groups.
  • Suitable aryl groups are phenyl and 1- and 2-naphthyl groups.
  • alkyl-cycloalkyl groups examples include cyclopentyl- and cyclohexylmethyl, 2- cyclopentyl- and 2-cyclohexylethy-1-yl, 3-cyclopentyl- and 3-cyclohexylprop-1 -yl, and 4- cyclopentyl- and 4-cyclohexyl-n-but-1-yl groups.
  • alkyl-aryl groups are phenylmethyl, 2-phenyleth-1 -yl, 3-phenylprop- 1 -yl, and 4-phenyl-n-but-1 -yl groups.
  • suitable cycloalkyl-aryl groups are 4-phenyl-cyclohex-1 -yl, 4-cyclohexyl- phen-1 -yl, and 2,3-dihydroindene-1 ,2-diyl groups.
  • alkyl-cycloalkyl-aryl groups examples include cyclohexyl-phenyl-methyl and 2- cyclohexyl-2-phenyl-eth-1 -yl groups.
  • Examples for particularly preferred substituted oxiranes are ethyl, 2,2- and 2,3-dimethyl, 2,2,3-trimethyl, 2,2,3,3-tetramethyl, 2-methyl-3-ethyl, 2,2- and 2,3-diethyl, n-propyl, 2- methyl-3-n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, cyclopentyl, cyclohexyl, phenyl, and naphthyl oxirane; 1 ,2-epoxy-cyclohexane and - cyclopentane; 1 -oxa-3-spiro[3.4]-heptane and 1 -oxa-3-spiro[3.5]-octane; and 1 ,2-epoxy- 2,3-dihydroindene
  • the substituted oxirane is selected from the group consisting of 2-ethyl, 2,3-dimethyl and 2,2-dimethyl oxirane, particularly preferably, 2-ethyl oxirane and 2,3- dimethyl oxirane.
  • the oxyalkylene monomer units particularly preferably used are selected from oxybut-1 ,2-ylene, -CH(C 2 H 5 )-CH 2 -0-, and oxybut-2,3-ylene, -CH(CH 3 )-CH(CH 3 )-0-.
  • the average degree of the polymerization of the block (B2) can vary broadly and, therefore, can be adapted most advantageously to the particular requirements of the composition and the process of the invention.
  • the average degree of polymerization is in the range of from 5 to 100, more preferably, 5 to 75 and, most preferably, 5 to 50.
  • variable Y stands for a hydrogen atom or a monovalent organic residue, except linear and branched alkyl groups having 5 to 20 carbon atoms.
  • the monovalent organic residue Y is selected from the group consisting of alkyl groups having 1 to 4 and 21 to 30 carbon atoms and cycloalkyl, aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups.
  • the monovalent residues Y are selected from the group consisting of methy, ethyl, propyl, isopropyl, n-, sec- and tert-butyl, linear and branched heneicosanyl docosanyl tricosanyl tetracosanyl pentacosanyl, hexacosanyl, heptacosanyl, octacosanyl, nonacosanyl and triacontanyl, cyclohexyl, benzyl and phenyl groups and phenyl grpups having an alkyl group of 4 to 16 carbon atoms in their 4-position.
  • the monovalent residue Y is a hydrogen atom.
  • the hydrophilic-lipophilic balance (HLB) value of amphiphilic nonionic surfactant (B) can vary broadly and, therefore, can be adapted most advantageously to the particular requirements of a given composition and process of the invention.
  • the HLB value is in the range of from 3 to 20 and, most preferably, 4 to 18.
  • the surface tension of the amphiphilic nonionic surfactant (B) can also vary broadly and, therefore, can be adapted most advantageously to the particular requirements of a given composition and process of the invention.
  • the surface tension is in the range of from 20 to 60, more preferably 25 to 55 and, most preferably 25 to 50 dyne/cm at 25°C.
  • the weight average molecular weight of the amphiphilic nonionic surfactant (B) can also vary broadly and , therefore, can be adapted most advantageously to the particular requirements of a given composition and process of the invention.
  • the weight average molecular weight is in the range of from 1000 to 10,000 and, most preferably 1 100 to 8000 Dalton, particularly 1 100 to 3500 Dalton.
  • amphiphilic anionic surfactants (B) offer no chemical and methodic particularities but they can be carried out in accordance with customary and known methods, as for example, the anionic ring-opening polymerization of suitable oxiranes or the polycondensation of suitable epichlorohydrines using the aforementioned mono- and polyhydroxy compounds R' as starter molecules or no such starter molecules.
  • the concentration of the amphiphilic nonionic surfactant (B) in the composition of the invention can vary broadly and, therefore, can be adjusted most advantageously to the particular requirements of a given composition and process of the invention.
  • the composition of the invention contains the amphiphilic nonionic surfactant (B) in amounts of from 0.001 to 5% by weight, more preferably, 0.005 to 2.5% by weight, even more preferably, 0.0075 to 1 % by weight and, most preferably, 0.0075 to 0.5% by weight.
  • the composition of the invention can contain at least one functional component (D) which is different from the ingredients or components (A), (B) and (C).
  • the functional component (D) is selected from the group of compounds customarily used in ceria-based CMP slurries.
  • Examples of such compounds (D) are disclosed, for example, by Y. N. Prasad et al. in Electrochemical and Solid-State Letters, 9 (12), G337-G339 (2006), Hyun-Goo Kang et al. in Journal of Material Research, volume 22, No. 3, 2007, pages 777 to 787, S. Kim et al. in Journal of Colloid and I nterface Science, 319 (2008), pages 48 to 52, S. V. Babu et al. in Electrochemical and Solid-State Letters, 7 (12), G327-G330 (2004), Jae-Dong Lee et al.
  • the functional component (D) is selected from the group consisting of organic, inorganic and hybrid organic-inorganic abrasive particles being different from the particles (D), materials having a lower critical solution temperature LCST or an upper critical solution temperature UCST, oxidizing agents, passivating agents, charge reversal agents, organic polyols having at least 3 hydroxide groups that are not dissociable in the aqueous medium, oligomers and polymers formed from at least one monomer having at least 3 hydroxide groups that are not dissociable in the aqueous medium , complexing or chelating agents, frictive agents, stabilizing agents, rheology agents, surfactants, metal cations, anti-microbial agents or biocides and organic solvents.
  • Suitable organic abrasive particles (D) and their effective amounts are known, for example, from the American patent application US 2008/0254628 A1 , page 4, paragraph [0054] or from the international application WO 2005/014753 A1 , wherein solid particles consisting of melamine and melamine derivatives such as acetoguanamine, benzoguanamine and dicyandiamide are disclosed.
  • Suitable inorganic abrasive particles (D) and their effective amounts are known, for example, from the international patent application WO 2005/014753 A1 , page 12, lines 1 to 8 or the American patent US 6,068,787, column 6, line 41 to column 7, line 65.
  • Suitable hybrid organic-inorganic abrasive particles (D) and their effective amounts are known, for example, from the American patent applications US 2008/0254628 A1 , page 4, paragraph [0054] or US 2009/001 3609 A1 , page 3 , paragraph [0047] to page 6, paragraph [0087].
  • Suitable oxidizing agents (D) and their effective amounts are known, for example, from the European patent application EP 1 036 836 A1 , page 8, paragraphs [0074] and [0075] or from the American patents US 6,068,787, column 4, line 40 to column 7, line 45 or US 7,300,601 B2, column 4, lines 18 to 34.
  • organic and inorganic peroxides are used.
  • hydrogen peroxide is used.
  • Suitable passivating agents (D) and their effective amounts are known, for example, from the American patent US 7,300,601 B2, column 3, line 59 to column 4, line 9 or from the American patent application US 2008/0254628 A1 , the paragraph [0058] bridging the pages 4 and 5.
  • Suitable complexing or chelating agents (D) which are sometimes also designated as frictive agents (cf. the American patent application US 2008/0254628 A1 , page 5, paragraph [0061 ]) or etching agents or etchants (cf. the American patent application US 2008/0254628 A1 , page 4, paragrap [0054]), and their effective amounts are known, for example, from the American patent US 7,300,601 B2, column 4, lines with 35 to 48.
  • amino acids in particular glycine, and, moreover, dicyandiamide and triazines containing at least one, preferably two and, more preferably, three primary amino groups such as melam ine and water-soluble guanamines, particularly melamine, formoguanamine, acetoguanamine and 2,4-diamino-6-ethyl-1 ,3,5-triazine, are most particularly preferably used.
  • Suitable stabilizing agents (D) and their effective amounts are known, for example, from the American patent US 6,068,787, column 8, lines 4 to 56.
  • Suitable rheology agents (D) and their effective amounts are known, for example, from the American patent application US 2008/0254628 A1 , page 5, paragraph [0065] to page 6, paragraph [0069].
  • Suitable surfactants (D) and their effective amounts are known, for example, from the international patent application WO 2005/014753 A1 , page 8, line 23, to page 10, line 17 or from the American patent US 7,300,601 B2, column 5, line 4 to column 6, line 8.
  • Preferred surfactants (D) are nonionic surfactants selected from the group consisting of linear and branched alkylene oxide, preferably ethyleneoxide and propyleneoxide, homopolymers and copolymers.
  • the preferred ethyleneoxide-propyleneoxide copolymers (D) can be random copolymers, alternating copolymers or blockcopolymers containing polyethyleneoxide blocks and polypropyleneoxide blocks.
  • the polyethyleneoxide blocks have hydrophilic-lipophilic-balance (HLB) values from 10 to 15.
  • the polypropyleneoxide blocks may have a HLB values of from 28 to about 32
  • the preferred surfactants (D) are customary and known, commercially available materials and are described in the European patent EP 1 534 795 B1 , page 3, paragraph [0013] to page 4, paragraph [0023], the Japanese patent application JP 2001 -240850 A, claim 2 in conjunction with the paragraphs [0007] to [0014], the American patent application US 2007/0077865 A1 , column page 1 , paragraph [0008] to page 2, paragraph [0010], the American patent application US 2006/0124594 A1 , page 3, paragraphs [0036] and [0037] and the American patent application US 2008/0124913 A1 , page 3, paragraphs [0031 ] to [0033] in conjunction with the claim 14 or they are sold under the trademarks PluronicTM, TetronicTM and BasensolTM by BASF Corporation and BASF SE as evidenced by the company brochure of BASF Corporation "PluronicTM & TetronicTM Block
  • Suitable polyvalent metal ions (D) and their effective amounts are known, for example, from the European patent application EP 1 036 836 A1 , page 8, paragraph [0076] to page 9, paragraph [0078].
  • Suitable organic solvents (D) and their effective amounts are known, for example, from the American patent US 7,361 ,603 B2, column 7, lines 32 to 48 or the American patent application US 2008/0254628 A1 , page 5, paragraph [0059].
  • Suitable anti-microbial agents or biocides (D) are N-substituted diazenium dioxides and N'-hydroxy-diazenium oxide salts.
  • Suitable materials (D) exhibiting a lower critical solution temperature LCST or an upper critical solution temperature UCST are described, for example, in the article of H. Mori, H. Iwaya, A. Nagai and T. Endo, Controlled synthesis of thermoresponsive polymers derived from L-proline via RAFT polymerization, in Chemical Communication, 2005, 4872-4874; or in the article of D.
  • charge reversal agent (D) customarily used in the field of CMP can be used.
  • the charge reversal agent (D) is selected from the group consisting of monomeric, oligomeric and polymeric compounds containing at least one anionic group selected from the group consisting of carboxylate, sulfinate, sulfate, phosphonate and phosphate groups.
  • anionic phosphate dispersing agents in particular water-soluble condensed phosphates
  • charge reversal agents D
  • suitable water-soluble condensed phosphates (D) are salts, in particular ammonium, sodium and potassium salts, of metaphosphates of the general formula I: and polyphosphates of the general formula II and III: wherein M is an ammonium, sodium or potassium cation and the index n is from 2 to 10,000.
  • the concentration of the water-soluble anionic phosphate dispersing agent (D) in the composition of the invention can vary broadly and, therefore, can be adjusted most advantageously to the particular requirements of a given composition and process of the invention.
  • the anionic phosphate dispersing agents (D) is used in amounts so that a weight ratio of ceria (A) to anionic phosphate dispersing agent (D) of 10 to 2000 and, more preferably, 20 to 1000 results.
  • the functional component (D) can be contained in varying amounts.
  • the total amount of (D) is not more than 10 wt.% ("wt.%” means "percent by weight"), more preferably not more than 2 wt.%, most preferably not more than 0.5 wt.%, particularly not more than 0.1 wt.%, for example not more than 0.01 wt.%, based on the total weight of the corresponding CMP composition.
  • the total amount of (D) is at least 0.0001 wt. % , more preferably at least 0.001 wt. % , most preferably at least 0.008 wt.
  • composition of the invention can optionally contain at least one pH-adjusting agent or buffering agent (E) which is materially different from the ingredients (A), (B) and (C).
  • pH-adjusting agents or buffering agents (E) and their effective amounts are known, for example, from the European patent application EP 1 036 836 A1 , page 8, paragraphs [0080], [0085] and [0086], the international patent application WO 2005/014753 A1 , page 12, lines 19 to 24, the American patent application US 2008/0254628 A1 , page 6, paragraph [0073] or the American patent US 7,300,601 B2, column 5, lines 33 to 63.
  • pH-adjusting agents or buffering agents (E) are potassium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide (TMAH), nitric acid, and sulfuric acid.
  • the pH-adjusting agent or buffering agent (E) can be contained in varying amounts.
  • the total amount of (E) is not more than 20 wt.%, more preferably not more than 7 wt.%, most preferably not more than 2 wt.%, particularly not more than 0.5 wt.%, for example not more than 0.1 wt.%, based on the total weight of the corresponding CM P composition.
  • the total amount of (E) is at least 0.001 wt. %, more preferably at least 0.01 wt.%, most preferably at least 0.05 wt.%, particularly at least 0.1 wt. %, for example at least 0.5 wt. % , based on the total weight of the corresponding composition.
  • the pH of the composition of the invention is set between 3 and 10, more preferably, 3 and 8, even more preferably between 3 and 7, and, most preferably between 5 and 7 preferably using the aforementioned pH-adjusting agents (E).
  • the preparation of the composition of the invention does not exhibit any particularities but can be carried out by dissolving or dispersing the above-described ingredients (A), (B) and (C) and optionally (D) and/or (E) in an aqueous medium, in particular, de-ionized water.
  • an aqueous medium in particular, de-ionized water.
  • the customary and standard mixing processes and mixing apparatuses such as agitated vessels, in-line dissolvers, high shear impellers, ultrasonic mixers, homogenizer nozzles or counterflow mixers, can be used .
  • the composition of the invention thus obtained can be filtered through filters of the appropriate mesh aperture, in order to remove coarse-grained particles such as the agglomerates or aggregates of the solid, finely dispersed abrasive particles (A).
  • compositions of the invention are excellently suited for the process of the invention.
  • a substrate for electrical, mechanical and optical devices in particular, electrical devices, most preferably, integrated circuit devices, is contacted at least once with a composition of the invention and polished, in particular, chemically and mechanically polished, until the desired planarity is achieved.
  • the process on the invention exhibits its particular advantages in the CMP of silicon semiconductor wafers having at least one dielectric isolating film consisting of at least one, preferably one, silicon oxide dielectric material, and at least one film consisting of polysilicon.
  • silicon oxide dielectric material is selected from the group consisting of silicon dioxide and low-k and ultra-low-k silicon oxide materials.
  • the silicon semiconductor wafers have at least one silicon nitride film.
  • Suitable silicon dioxide materials can preprepared by low-pressure and high-pressure plasma chemical vapor deposition (LDP or HDP CVD) using monosilane-oxygen or tetraethylorthosilicate (TEOS)-oxygen plasmas as described in, for example, the American patent application US 2007/0175104 A1 , page 7, paragraph [0092].
  • LDP or HDP CVD low-pressure and high-pressure plasma chemical vapor deposition
  • TEOS tetraethylorthosilicate
  • Suitable low-k or ultra-low-k materials and suitable methods of preparing the insulating dielectric films are described , for example, in the American patent applications US 2005/0176259 A1 , page 2, paragraphs [0025] to [0027], US 2005/0014667 A1 , page 1 , paragraph [0003], US 2005/0266683 A1 , page 1 , paragraph [0003] and page 2, paragraph [0024] or US 2008/0280452 A1 , paragraphs [0024] to [0026] or in the American patent US 7,250,391 B2, column 1 , lines 49 to 54 or in the European patent application EP 1 306 415 A2, page 4, paragraph [0031].
  • the process of the invention is particularly suited for the shallow trench isolation (STI) which requires the selective removal of dielectric silicon oxide material over polysilicon on a patterned wafer substrate.
  • STI shallow trench isolation
  • etched trenches are overfilled with the dielectric silicon oxide material, e.g., silicon dioxide, which is polished using the polysilicon film as the barrier or stopping film.
  • the process of the invention ends with clearing the silicon dioxide from the barrier film while minimizing the removal of exposed polysilicon and trench silicon dioxide.
  • the process of the invention is also particularly well-suited for the shallow trench isolation (STI) wherein a silicon nitride film is also present, because the composition of the invention exhibits not only a high oxide-to-polysilicon selectivity but also an advantageous nitride-to-polysilicon selectivity and an advantageous oxide-to- nitride selectivity.
  • the process of the invention exhibits no particularities but can be carried out with the processes and the equipment customarily used for the CM P in the fabrication of semiconductor wafers with ICs.
  • a typical equipment for the CMP consists of a rotating platen which is covered with a polishing pad.
  • the wafer is mounted on a carrier or chuck with its upper side down facing the polishing pad .
  • the carrier secures the wafer in the horizontal position.
  • This particular arrangement of polishing and holding device is also known as the hard-platen design.
  • the carrier may retain a carrier pad which lies between the retaining surface of the carrier and the surface of the wafer which is not being polished. This pad can operate as a cushion for the wafer.
  • the larger diameter platen is also generally horizontally positioned and presents a surface parallel to that of the wafer to be polished. Its polishing pad contacts the wafer surface during the planarization process.
  • the composition of the invention is applied onto the polishing pad as a continuous stream or in dropwise fashion.
  • Both the carrier and the platen are caused to rotate around their respective shafts extending perpendicular from the carrier and the platen.
  • the rotating carrier shaft may remain fixed in position relative to the rotating platen or may oscillate horizontally relative to the platen.
  • the direction of rotation of the carrier typically, though not necessarily, is the same as that of the platen.
  • the speeds of rotation for the carrier and the platen are generally, though not necessarily, set at different values.
  • the temperature of the platen is set at temperatures between 10 and 70°C.
  • ceria average particle size dso of 120 to 180 nm as determined by dynamic laser light scattering
  • PP sodium hexametaphosphate
  • amphiphilic nonionic surfactants (B) listed in the Table 1 were additionally added.
  • no amphiphilic nonionic surfactant (B) was added.
  • Method B 1 g surfactant in 100g of 5% by weight solution of sodium chloride in water;
  • Method E 5g surfactant in 25g of 25% by weight solution of butyldiglycol in water; d) surface tension 45.3 dyne/cm at 25°C
  • the aqueous polishing composition 1 to 9 of the example 1 were used for the examples 2 to 9.
  • the aqueous polishing composition 10 of the example 1 was used for the comparative experiment C1 .
  • - Polishing apparatus AMAT Mirra (rotary type);
  • polishing pad IC1010-k groove pad
  • polishing downforce 3.5 psi (205 mbar);
  • polishing time 60 seconds.
  • the material removal rates MRRs were determined by measuring the thickness of the HDP silicon dioxide, silicon nitride and polysilicon films on the semiconductor substrates before and after CMP using a Thermawave Optiprobe 2600.
  • the M RRs and the calculated oxide-to-polysilicon, nitride-to-polysilicon and oxide-to- nitride selectivities are compiled in the Table 3.
  • Table 3 The MRRs of H D P S i licon Dioxide (HDP), Silicon Nitride (SiN) and

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Abstract

La composition de polissage aqueuse ci-décrite comprend (A) des particules abrasives en oxyde de cérium et (B) des tensioactifs non ioniques amphiphiles choisis parmi les copolymères séquencés de polyalkylène linéaires et ramifiés, solubles ou dispersables dans l'eau de formule générale I : R[(B1)m/(B2)nY]p (I), les indices et les variables dans ladite formule ayant la signification suivante : m, n, et p sont des entiers ≥ 1 ; R est un atome d'hydrogène ou un résidu organique monovalent ou polyvalent, exceptions faites des groupes alkyle C5-C20 ; (B1) est une séquence de motifs monomères oxyéthylène ; (B2) est une séquence de motifs monomères oxyalkylène substitués, les substituants étant choisis parmi deux groupes méthyle, groupes alkyle ayant plus de deux atomes de carbone et groupes cycloalkyle, aryle, alkyl-cycloalkyle, alkyl-aryle, cycloalkyl-aryle et alkyl- cycloalkyl-aryle ; et Y est un atome d'hydrogène ou un résidu organique monovalent, exceptions faites des groupes alkyle C5-C20 ; à la condition que, quand (B) contient plus d'une séquence (B1) ou (B2), deux séquences du même type soient séparées par une séquence de l'autre type.
PCT/IB2011/055506 2010-12-10 2011-12-07 Composition de polissage aqueuse et procédé de polissage mécano-chimique de substrats contenant un diélectrique en oxyde de silicium et des films en polysilicium Ceased WO2012077063A1 (fr)

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KR1020137017968A KR101919750B1 (ko) 2010-12-10 2011-12-07 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마를 위한 수성 연마 조성물 및 방법
SG2013038492A SG190334A1 (en) 2010-12-10 2011-12-07 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
RU2013131395/05A RU2588620C2 (ru) 2010-12-10 2011-12-07 Водная полирующая композиция и способ химико-механического полирования подложек, содержащих пленки на основе оксидкремниевого диэлектрика и на основе поликремния
EP11846454.4A EP2649144A4 (fr) 2010-12-10 2011-12-07 Composition de polissage aqueuse et procédé de polissage mécano-chimique de substrats contenant un diélectrique en oxyde de silicium et des films en polysilicium
US13/991,924 US9524874B2 (en) 2010-12-10 2011-12-07 Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
JP2013542655A JP6096670B2 (ja) 2010-12-10 2011-12-07 酸化ケイ素誘電体膜およびポリシリコン膜を含有する基板を化学的機械的に研磨するための水性研磨組成物および方法
CN201180058780XA CN103249790A (zh) 2010-12-10 2011-12-07 用于化学机械抛光包含氧化硅电介质和多晶硅膜的基底的含水抛光组合物和方法
IL226334A IL226334B (en) 2010-12-10 2013-05-13 Aqueous polishing composition and process for chemical mechanical polishing of substrate materials containing insulating silicon oxide layers and polysilicon

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MY165631A (en) 2018-04-18
SG10201510122PA (en) 2016-01-28
RU2013131395A (ru) 2015-01-20
KR101919750B1 (ko) 2018-11-19
KR20130127486A (ko) 2013-11-22
SG190334A1 (en) 2013-06-28
RU2588620C2 (ru) 2016-07-10
JP6096670B2 (ja) 2017-03-15
US9524874B2 (en) 2016-12-20
EP2649144A1 (fr) 2013-10-16
CN108276915A (zh) 2018-07-13
US20130248756A1 (en) 2013-09-26
JP2014505124A (ja) 2014-02-27
EP2649144A4 (fr) 2014-05-14

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