[go: up one dir, main page]

WO2012067327A1 - Composition pour contact postérieur de cellule solaire - Google Patents

Composition pour contact postérieur de cellule solaire Download PDF

Info

Publication number
WO2012067327A1
WO2012067327A1 PCT/KR2011/003825 KR2011003825W WO2012067327A1 WO 2012067327 A1 WO2012067327 A1 WO 2012067327A1 KR 2011003825 W KR2011003825 W KR 2011003825W WO 2012067327 A1 WO2012067327 A1 WO 2012067327A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
aluminum
back contact
solar cells
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/003825
Other languages
English (en)
Inventor
Byung Sun Gong
Shin Hye Baek
Hyo Sang Cho
Chul Ho Dan
Song Yi Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KCC Corp
Original Assignee
KCC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KCC Corp filed Critical KCC Corp
Publication of WO2012067327A1 publication Critical patent/WO2012067327A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to an aluminum paste composition for solar cells comprising aluminum powder; one or more oxide adhesive components comprising Na, Ca, K, B, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Zr, Ru, In, Sn, Sb, Tl, Bi, etc.; and a suitable organic vehicle, while not containing glass frit which is generally used as an inorganic adhesive in preparing a back contact of solar cells.
  • the present composition can provide solar cells with a uniform coating layer of back contact, good adhesion between the coating layer and the wafer, good back surface field (BSF), low-bowing and a wide window of firing.
  • a solar cell comprises a silicon wafer consisting of anti-reflection coating (ARC) for reducing light reflection and facilitating light absorption, pn junction, emitter and base; and a front contact and a back contact for guiding the electricity generated by light to an external circuit.
  • the terminal contacts are formed by alternately printing and drying bus bar, back aluminum and front silver pastes in this order, and co-firing at a temperature ranging from 600 to 950°C.
  • back contact paste technology for solar cells, it is important to realize the formation of durable coating, formation of sufficient aluminum back surface field (BSF), low-bowing, good contact and a wide window of firing. If a suitable inorganic adhesive is not used, the coating and back surface field (BSF) are not formed well, and due to the large difference between the wafer’s thermal expansion coefficient and that of the contact materials, the bowing phenomenon of the wafer occurs after processing, whereby efficiency may be lowered and defective modules may be produced.
  • BSF aluminum back surface field
  • Glass frit is generally used as such an inorganic adhesive. Glass frit melts at the sintering temperature and acts as a liquid sintering aid for promoting densification of metal powder fillers. It also penetrates into voids between metal particles and gaps between the substrate and the thin coating layer, and plays a role in increasing the binding level of metal particles and adhesion between the substrate and the thin coating layer. Glass powder, which melts at the sintering temperature of paste, is mainly used as a glass frit and it is necessary to use a glass powder having a low melting point in order to inhibit reactions in the element during the sintering process.
  • Korean Patent Laid-open Publication No. 10-2004-0025609 discloses a conductive paste for solar cells comprising aluminum powder and glass frit, wherein SiO 2 -PbO-based frit, SiO 2 -B 2 O 3 -PbO-based frit, etc. are described as the glass frit used therefor.
  • Korean Patent Laid-open Publication No. 10-2008-0099407, Korean Patent No. 10-0801168 and Korean Patent Laid-open Publication No. 10-2010-0021616 also disclose a composition for solar cells comprising silica-lead-based, bismuth-based and lithium-based frits.
  • a PbO-based glass frit is mainly used since it has the lowest melting point among glass powders.
  • the lead ingredient contained therein may cause environmental problems and thus its use is restricted.
  • lead-free glass frits such as bismuth, boron and phosphoric acid types are used in light of the environment, but they are expensive and the sintering process thereof requires a high temperature because of their high melting points. Thus, there may be a limitation in using them for parts requiring a sintering process at a low temperature.
  • the present invention has an object of providing a back contact composition for solar cells not using glass frit ⁇ which has the aforementioned problems as an inorganic adhesive ⁇ but showing properties similar with the case of using glass frit component, in terms of adhesion between the coating layer and the wafer, the coating layer and back surface field (BSF), and thus can solve the problems of conventional glass frit-containing paste compositions in terms of the environment and cost efficiency.
  • the present invention provides a back contact composition for solar cells comprising:
  • oxide adhesive component 0.1 to 10% by weight of oxide adhesive component
  • composition does not contain glass frit.
  • the other aspect of the present invention provides a solar cell comprising a back contact formed by the composition of the present invention.
  • the present composition contributes to the removal of oxide film wrapping up aluminum powder during firing, and helps sintering of aluminum by lowering the melting temperature.
  • voids between aluminums in the printing layer are filled and thus the bowing phenomenon of the substrate is relieved, whereby beneficial properties can be secured sufficiently.
  • Figure 1 schematically represents a general structure of a solar cell according to an embodiment of the present invention.
  • Figure 2 is an SEM image of the coating layer of the composition of Example 1 according to the present invention.
  • FIG 3 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Example 1 according to the present invention. (The thickness-indicated part is the BSF layer.)
  • Figure 4 is an SEM image of the coating layer of the composition of Example 2 according to the present invention.
  • FIG. 5 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Example 2 according to the present invention. (The thickness-indicated part is the BSF layer.)
  • Figure 6 is an SEM image of the coating layer of the composition of Example 3 according to the present invention.
  • FIG. 7 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Example 3 according to the present invention. (The thickness-indicated part is the BSF layer.)
  • Figure 8 is an SEM image of the coating layer of the composition of Example 4 according to the present invention.
  • FIG 9 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Example 4 according to the present invention. (The thickness-indicated part is the BSF layer.)
  • Figure 10 is an SEM image of the coating layer of the composition of Comparative Example 1 of the present invention.
  • FIG 11 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Comparative Example 1 of the present invention. (The thickness-indicated part is the BSF layer.)
  • Figure 12 is an SEM image of the coating layer of the composition of Comparative Example 2 of the present invention.
  • Figure 13 is an SEM image showing the back surface field (BSF) layer formed by applying the composition of Comparative Example 2 of the present invention. (The thickness-indicated part is the BSF layer.)
  • Aluminum which is included with the largest composition ratio in the back contact composition for solar cells of the present invention, forms a back surface field (BSF) and reduces the recombination of electron and hole.
  • BSF back surface field
  • spherical or flake aluminum metal powder aluminum alloy, aluminum salt, organometallic aluminum, colloidal aluminum, aluminum oxide or a combination thereof may be used, and a powdered form is usually used.
  • the size of the aluminum powder is preferably 2 to 20 ⁇ m and more preferably 3 to 10 ⁇ m, but it is not limited thereto.
  • the amount of aluminum contained in the present composition is 60 to 85% by weight, based on the weight of the composition, and more preferably 65 to 80% by weight. If the amount of aluminum is less than 60% by weight, it may be unfavorable to form necking between metal powders and the dense contact structure. In addition, the uniform and thick back surface field (BSF) layer may not be formed easily and the function as a contact (electrode) may be lost due to high resistance. However, if the amount of aluminum is greater than 85% by weight, the dispersion of paste becomes very difficult and thus the printability and removal from the screen stencil becomes worse, by which the electrode resistance may increase.
  • BSF back surface field
  • the oxide adhesive component contained in the present composition substitutes for conventional glass frit to provide the coating layer with adhesion property.
  • one or more oxides of one or more elements selected from the group consisting of Na, Ca, K, B, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Zr, Ru, In, Sn, Sb, Tl and Bi may be used. These oxides may be used alone or in combination of two or more.
  • one or more oxides of one or more elements selected from Na, Si, P, Ti, Ni, Zn, Sn and Bi may be used, and more preferably, one or more oxides of one or more elements selected from Ti, Ni, Zn, Sn and Bi may be used.
  • the amount of oxide adhesive component contained in the present composition is 0.1 to 10% by weight, based on the weight of the composition, and more preferably 0.5 to 5% by weight. If the amount of oxide adhesive component is less than 0.1% by weight, the adhesion between the substrate and coating layer may be worse or the surface aluminum may be separated after firing, and the bowing phenomenon of silicon solar cell may be noticeable. If the amount of oxide adhesive component is greater than 10% by weight, it becomes an obstacle to the sintering of aluminum and is thus unfavorable in forming the back surface field (BSF) layer and the electrical characteristics may be unsatisfactory.
  • BSF back surface field
  • NiO, ZnO, SnO, Bi 2 O 3 , etc. may be mixed and used in an amount of preferably 20 to 200 parts by weight, more preferably 20 to 50 parts by weight and most preferably 50 parts by weight, based on 100 parts by weight of TiO 2 , by which the strength of the coating layer and the adhesion between the coating layer and the substrate may be better, the surface roughness of the coating layer may decrease and the sintering of aluminum may be carried out easily.
  • Cellulose resin, acryl resin, urethane resin, urea resin, ester resin and combinations thereof may be used as the organic vehicle contained in the present composition.
  • the amount of organic vehicle contained in the present composition is 5 to 30% by weight, based on the weight of the composition, and more preferably 15 to 30% by weight. If the amount of organic vehicle is less than 5% by weight, the printability and removal from stencil may be worse and there may be a problem in dispersion of paste in the 3-roll dispersion process.
  • the present composition may further comprise conventional additives such as a thickener, a dispersant, a wetting agent, a fluidizing agent, etc. which may be included in back contact compositions for solar cells.
  • a thickener such as a thickener, a dispersant, a wetting agent, a fluidizing agent, etc.
  • a fluidizing agent such as a surfactant, a surfactant, etc.
  • glass frit although it is not contained intentionally, this does not exclude the possibility of its existence as an impurity in a very small amount.
  • the aluminum back contact composition for solar cells may be prepared as follows.
  • Aluminum powder, oxide adhesive component and other additives are formulated in an organic vehicle with proper ratios.
  • a solvent may be further incorporated to adjust the viscosity. If the paste has a higher viscosity than the target one, the solvent used in the formulation or a solvent mixture having the same ratio as in the formulation is further added.
  • the mixed paste composition is agitated with a paste mixer or a planetary mixer for preliminary dispersion and then treated with a 3-roll mill about three to four times to prepare it as a uniformly and finely dispersed aluminum paste.
  • composition prepared according to the present invention is mainly available for screen printing and is suitably used for forming a back contact in the production of solar cell devices.
  • the screen printing technique is presently a general production process for forming a contact (electrode) in crystalline silicon solar cells.
  • Screen printing relates to three factors: printer, screen and metal paste.
  • a metal paste is applied on a mask by using a scrapper, moved by using a squeeze under constant pressure and passed through openings, thereby forming a pattern on the surface of the substrate underlying the screen.
  • a solar cell characterized in comprising a back contact formed by the above composition is provided.
  • Examples 1 to 4 used the oxide components as shown in the following Table 1. However, no glass frit was used.
  • Comparative Examples 1 and 2 essentially comprised glass frit as an inorganic adhesive. The other components were used as shown in the following Table 1.
  • Sample pieces of solar cell were prepared for the hot water test.
  • the aluminum paste back contact compositions were applied on a crystalline silicon wafer which had been subjected to a screen printing process and treated at high temperature in a drying zone and a firing zone on a conveyer belt.
  • the resin binder component including organic solvent was burned out when it passed through the drying zone at 300°C or higher, by which only metal and inorganic components remained.
  • BSF back surface field
  • the adhesion test was carried out according to ASTM D-3359 as follows. By using a sharp knife, on the back coating layer, eleven (11) parallel lines with the same space (1mm space) were drawn, and eleven (11) perpendicularly crossing parallel lines with the same space were further drawn to make 100 squares (10 x 10). After NICHIBAN adhesion tape was uniformly attached thereon, the adhesion tape was detached quickly from one end by hand with a proper force at the regular angle of 45°. The number of unpeeled squares was measured. By this cross-cut test, the adhesion between the wafer and the coating layer was tested. Examples showed results which were the same as or similar to those of the Comparative Examples.
  • the solar cell efficiencies were good as 15.5% or more in all of Examples 1 to 4 and Comparative Examples 1 and 2, and the bowing of the substrate was less than 1mm in all Examples and Comparative Examples.
  • the cross-sectional structure analysis of the solar cells was carried out through SEM (Scanning Electron Microscope).
  • SEM Sccanning Electron Microscope
  • the SEM images of the composition coating layers and back surface field (BSF) layers of the Examples and Comparative Examples are represented in Figures 2 to 13. All Examples and Comparative Examples showed proper thicknesses of back surface field (about 4 to 8 ⁇ m) and back coating layer (about 30 to 38 ⁇ m).
  • the present composition secures proper thicknesses of back surface field and back coating layer, and contributes to high solar cell efficiency.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)

Abstract

La présente invention concerne une composition de pâte d'aluminium pour cellules solaires, comprenant : de la poudre d'aluminium ; un ou plusieurs composés oxydes adhésifs comprenant Na, Ca, K, B, Al, Si, P, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Zr, Ru, In, Sn, Sb, Tl, Bi, etc. ; et un véhicule organique adéquat, tout en ne contenant pas de fritte de verre qui est généralement utilisée comme adhésif inorganique dans la préparation d'un contact postérieur des cellules solaires. La présente composition peut fournir des cellules solaires présentant une couche de revêtement uniforme des contacts postérieurs, une bonne adhérence entre la couche de revêtement et la tranche, un bon champ de surface arrière (BSF), une faible flexion et une large fenêtre de recuit.
PCT/KR2011/003825 2010-11-18 2011-05-25 Composition pour contact postérieur de cellule solaire Ceased WO2012067327A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100114992A KR101190612B1 (ko) 2010-11-18 2010-11-18 태양전지용 후면 전극 조성물
KR10-2010-0114992 2010-11-18

Publications (1)

Publication Number Publication Date
WO2012067327A1 true WO2012067327A1 (fr) 2012-05-24

Family

ID=46084222

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003825 Ceased WO2012067327A1 (fr) 2010-11-18 2011-05-25 Composition pour contact postérieur de cellule solaire

Country Status (2)

Country Link
KR (1) KR101190612B1 (fr)
WO (1) WO2012067327A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013013138A1 (fr) * 2011-07-20 2013-01-24 Mossey Creek Solar, LLC Substrat à utiliser pour la préparation de cellules solaires
CN103617821A (zh) * 2013-11-29 2014-03-05 江苏瑞德新能源科技有限公司 一种低印刷湿重的太阳能电池背铝浆料
CN103617823A (zh) * 2013-11-29 2014-03-05 江苏瑞德新能源科技有限公司 一种低翘曲太阳能电池背铝浆料
CN103854720A (zh) * 2012-12-03 2014-06-11 西北稀有金属材料研究院 一种太阳能电池铝背场浆料及其制备方法
US9543493B2 (en) 2011-11-22 2017-01-10 Mossey Creek Technologies, Inc. Packaging for thermoelectric subcomponents
US9908282B2 (en) 2010-05-25 2018-03-06 Mossey Creek Technologies, Inc. Method for producing a semiconductor using a vacuum furnace
US9911909B2 (en) 2013-04-15 2018-03-06 Mossey Creek Technologies, Inc. Method for producing a thermoelectric material
RU2651642C1 (ru) * 2017-01-11 2018-04-23 Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике", ООО "НТЦ ТПТ" Фотоэлектрический преобразователь с самовосстанавливающимся контактом

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USD779449S1 (en) 2014-10-01 2017-02-21 Samsung Electronics Co., Ltd. Portable electronic device
USD797713S1 (en) 2014-10-01 2017-09-19 Samsung Electronics Co., Ltd. Portable electronic device
USD779450S1 (en) 2014-10-01 2017-02-21 Samsung Electronics Co., Ltd. Portable electronic device
USD785586S1 (en) 2014-10-01 2017-05-02 Samsung Electronics Co., Ltd. Portable electronic device
USD784972S1 (en) 2014-10-01 2017-04-25 Samsung Electronics Co., Ltd. Portable electronic device
USD795855S1 (en) 2014-10-01 2017-08-29 Samsung Electronics Co., Ltd. Portable electronic device
USD803818S1 (en) 2014-10-01 2017-11-28 Samsung Electronics Co., Ltd. Portable electronic device
USD781275S1 (en) 2014-10-01 2017-03-14 Samsung Electronics Co., Ltd. Portable electronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657183A (ja) * 1992-08-05 1994-03-01 Murata Mfg Co Ltd 導電性ペースト
JP2000090734A (ja) * 1998-09-16 2000-03-31 Murata Mfg Co Ltd 導電性ペースト及びそれを用いた太陽電池
JP2004362862A (ja) * 2003-06-03 2004-12-24 Kyoto Elex Kk 厚膜導体用導電性ペースト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0657183A (ja) * 1992-08-05 1994-03-01 Murata Mfg Co Ltd 導電性ペースト
JP2000090734A (ja) * 1998-09-16 2000-03-31 Murata Mfg Co Ltd 導電性ペースト及びそれを用いた太陽電池
JP2004362862A (ja) * 2003-06-03 2004-12-24 Kyoto Elex Kk 厚膜導体用導電性ペースト組成物

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9908282B2 (en) 2010-05-25 2018-03-06 Mossey Creek Technologies, Inc. Method for producing a semiconductor using a vacuum furnace
WO2013013138A1 (fr) * 2011-07-20 2013-01-24 Mossey Creek Solar, LLC Substrat à utiliser pour la préparation de cellules solaires
US8828791B2 (en) 2011-07-20 2014-09-09 Mossey Creek Solar, LLC Substrate for use in preparing solar cells
US9543493B2 (en) 2011-11-22 2017-01-10 Mossey Creek Technologies, Inc. Packaging for thermoelectric subcomponents
CN103854720A (zh) * 2012-12-03 2014-06-11 西北稀有金属材料研究院 一种太阳能电池铝背场浆料及其制备方法
US9911909B2 (en) 2013-04-15 2018-03-06 Mossey Creek Technologies, Inc. Method for producing a thermoelectric material
CN103617821A (zh) * 2013-11-29 2014-03-05 江苏瑞德新能源科技有限公司 一种低印刷湿重的太阳能电池背铝浆料
CN103617823A (zh) * 2013-11-29 2014-03-05 江苏瑞德新能源科技有限公司 一种低翘曲太阳能电池背铝浆料
CN103617821B (zh) * 2013-11-29 2016-08-17 江苏瑞德新能源科技有限公司 一种低印刷湿重的太阳能电池背铝浆料
RU2651642C1 (ru) * 2017-01-11 2018-04-23 Общество с ограниченной ответственностью "НТЦ тонкопленочных технологий в энергетике", ООО "НТЦ ТПТ" Фотоэлектрический преобразователь с самовосстанавливающимся контактом

Also Published As

Publication number Publication date
KR20120053723A (ko) 2012-05-29
KR101190612B1 (ko) 2012-10-12

Similar Documents

Publication Publication Date Title
WO2012067327A1 (fr) Composition pour contact postérieur de cellule solaire
KR20100099700A (ko) 태양전지 및 태양전지의 제조에 이용되는 조성물
CN103236281A (zh) 在半导体装置的制造中用于细线条高纵横比丝网印刷的导电浆料
CN101055776A (zh) 导电的厚膜组合物、电极和所形成的半导体设备
JP2013089600A (ja) 厚膜銀ペーストと半導体デバイスの製造においてのその使用
WO2011046365A2 (fr) Composition de pâte à l'argent et pile solaire l'utilisant
WO2011055995A2 (fr) Cellule solaire et composition de pâte pour une électrode de cellule solaire
WO2013085112A1 (fr) Composition de pâte pour électrode de cellule solaire et électrode produite à partir de celle-ci
WO2013023169A1 (fr) Pâte d'aluminium n'ayant pas ou peu de capacité de traverser par gravure et son utilisation pour des électrodes arrière de cellules solaires en silicium à émetteur passivé et à contact arrière
CN102428568A (zh) 在硅片正面上形成栅极的方法
US20130056060A1 (en) Process for the production of lfc-perc silicon solar cells
WO2016137059A1 (fr) Composition de pâte d'argent, électrode avant pour cellule solaire formée à l'aide de celle-ci et cellule solaire l'employant
WO2018080094A1 (fr) Pâte conductrice pour électrode de cellules solaires et cellule solaire fabriquée à l'aide de ladite pâte conductrice
WO2019088526A1 (fr) Pâte conductrice pour électrode de cellule solaire, et cellule solaire fabriquée en utilisant celle-ci
WO2013032092A1 (fr) Pâte métallique destinée à la formation d'une électrode de cellule solaire
WO2012119157A1 (fr) Procédé pour la formation d'une électrode arrière d'argent d'un émetteur passivé et cellule solaire de silicium à contact arrière
WO2013023181A1 (fr) Pâte d'argent présentant une capacité de cuisson par diffusion nulle ou médiocre et son utilisation pour la métallisation d'une cellule solaire
WO2018097479A1 (fr) Composition de pâte conductrice d'électrode de photopile, et photopile comprenant une électrode fabriquée à l'aide de ladite composition
WO2012148021A1 (fr) Composition de pâte d'aluminium permettant d'obtenir un faible cintrage et des performances élevées dans une pile solaire au silicium
WO2011028035A2 (fr) Cellule solaire et composition de pâte associée
KR101368314B1 (ko) 비히클 조성물 및 이를 이용한 전도성 조성물
WO2017074151A1 (fr) Composition de pâte d'électrode pour cellule solaire et cellule solaire préparée au moyen de ladite composition
WO2011074888A2 (fr) Composition de pâte d'électrode pour surface arrière de cellules photovoltaïques
US11728066B2 (en) Lithium-tellurium silicon-lead bismuth multi-component glass-oxide-complex system and conductive paste containing same
WO2020111901A1 (fr) Pâte conductrice pour électrode de cellule solaire et cellule solaire fabriquée à l'aide de celle-ci

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11841496

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11841496

Country of ref document: EP

Kind code of ref document: A1