[go: up one dir, main page]

WO2012066810A1 - Cible de pulvérisation d'oxyde d'étain et d'indium (ito) - Google Patents

Cible de pulvérisation d'oxyde d'étain et d'indium (ito) Download PDF

Info

Publication number
WO2012066810A1
WO2012066810A1 PCT/JP2011/063211 JP2011063211W WO2012066810A1 WO 2012066810 A1 WO2012066810 A1 WO 2012066810A1 JP 2011063211 W JP2011063211 W JP 2011063211W WO 2012066810 A1 WO2012066810 A1 WO 2012066810A1
Authority
WO
WIPO (PCT)
Prior art keywords
ito
film
target
clearance
indium
Prior art date
Application number
PCT/JP2011/063211
Other languages
English (en)
Japanese (ja)
Inventor
崇 掛野
鈴木　了
敏也 栗原
中村　祐一郎
和広 関
牧野　修仁
吉一 熊原
Original Assignee
Jx日鉱日石金属株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx日鉱日石金属株式会社 filed Critical Jx日鉱日石金属株式会社
Priority to KR1020127017316A priority Critical patent/KR101347967B1/ko
Priority to JP2011541417A priority patent/JP5410545B2/ja
Priority to CN201180025334.9A priority patent/CN102906301B/zh
Publication of WO2012066810A1 publication Critical patent/WO2012066810A1/fr

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Definitions

  • the present invention relates to a sputtering target used when producing a transparent conductive film by a sputtering method, and more particularly to an ITO sputtering target comprising a plurality of target materials and having divided portions.
  • An ITO thin film for forming a transparent conductive film is widely used as a transparent electrode of a display device centering on a liquid crystal display, a touch panel, an EL display and the like.
  • an oxide thin film for forming a transparent conductive film such as ITO is formed by sputtering.
  • ITO Indium Tin Oxide
  • FPD flat panel displays
  • a black deposit which is considered to be a lower oxide of indium called nodule, is deposited on the surface of the target, particularly in the divided portion, and abnormal discharge occurs. It is known that it becomes a source of particles on the thin film surface.
  • Patent Document 1 discloses a method of filling a clearance portion with an indium-tin alloy equal to the atomic ratio of indium and tin of the target body.
  • it is necessary to measure the atomic ratio of indium and tin in the target body, and to adjust the composition of the indium-tin alloy to be injected on the basis of the result.
  • the indium-tin alloy is injected into the entire clearance portion, there is a problem that the electrical characteristics of the film formed on the upper part are different from the electrical characteristics of the film formed on other portions. .
  • Patent Document 2 discloses a method of filling in the clearance with indium
  • Patent Document 3 discloses a method of filling an alloy having a higher melting point than the bonding material.
  • indium or the like is injected into the entire clearance portion, the electrical characteristics of the film formed on the upper part thereof are different from the electrical characteristics of the film formed on other portions. was there.
  • Patent Document 4 discloses a method of filling a clearance portion with a material having a different composition, although the metal oxide sintered body and the constituent elements are the same.
  • the amount of oxygen is small, it has almost the same characteristics as a normal alloy, so the electrical characteristics of the film formed on the upper part are different from the electrical characteristics of the film formed on other parts.
  • the amount of oxygen is large, there is almost no difference from the characteristics of ITO, so that there is a problem that it cannot be dissolved and poured into the clearance portion at a low temperature.
  • JP-A-01-230768 Japanese Patent Laid-Open No. 08-144052 JP 2000-144400 A JP 2010-106330 A
  • the present invention can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the divided ITO target, and the characteristics of the film formed on the substrate facing the clearance part are the characteristics of the film of the other part. It is an object of the present invention to provide an ITO sputtering target, particularly an FPD sputtering target, which can obtain a film having a high uniformity in film characteristics.
  • the ITO sputtering target is composed of a plurality of divided targets, and the edge of the plurality of divided targets is devised, whereby the divided target is A large target was prepared by arranging, and it was found that a sputtering target, particularly an FPD sputtering target, which can reduce defects caused by the generation of particles due to the edge of each divided target can be provided.
  • the present invention 1) An ITO sputtering target in which a plurality of ITO divided targets are arranged on a backing plate and bonded to the backing plate, and indium and indium alloy are formed only on the side surface on the clearance side between the arranged ITO divided targets.
  • an ITO sputtering target having a coating layer of one material selected from tin alloys is provided.
  • the present invention also provides: Indium alloy or tin alloy is In—Sn, In—Bi, In—Bi—Sn, In—Ga, In—Ga—Sn, In—Ga—Bi, Sn—Ga, Sn—Bi, Sn—Ga—Bi.
  • Indium alloy or tin alloy is In—Sn, In—Bi, In—Bi—Sn, In—Ga, In—Ga—Sn, In—Ga—Bi, Sn—Ga, Sn—Bi, Sn—Ga—Bi.
  • the present invention also provides: The ITO sputtering target according to 1) or 2) above, wherein the clearance between the ITO divided targets is 0.2 to 0.8 mm.
  • the present invention also provides:
  • the thickness of the coating layer is 0.04 to 0.35 mm, and the size of the gap obtained by subtracting the thickness of the coating layer from the size of the clearance is 0.1 to 0.72 mm.
  • An ITO sputtering target according to any one of 3) is provided.
  • the sputtering target of the present invention thus adjusted can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the divided ITO target, and the characteristics of the film formed on the substrate facing the clearance portion.
  • an ITO sputtering target in particular a sputtering target for FPD, which has no difference from the characteristics of other parts of the film, that is, a film having a high uniformity of film characteristics, and can improve the yield of film formation, It has the great advantage that the quality of the can be improved.
  • the ITO sputtering target of the present invention is an ITO sputtering target configured by arranging a plurality of ITO divided targets on a backing plate and bonding to the backing plate, and only on the side surface on the clearance side between the arranged ITO divided targets. And an ITO sputtering target having a structure having a coating layer of one substance selected from indium, an indium alloy, and a tin alloy. That is, the plurality of ITO divided targets arranged on the backing plate are not in close contact with each other, but have a constant interval (clearance).
  • FIG. 1 shows a cross-sectional view illustrating a typical ITO sputtering target of the present invention.
  • Each member of this divided ITO target can be manufactured by the following method. First, indium oxide powder and tin oxide powder are weighed so that tin oxide is 10 wt%. Normally, the tin oxide concentration of ITO is 10 wt%, but the tin oxide concentration may be in the range of 3 to 40 wt% within the allowable range for the transparent conductor characteristics. Next, the measured raw material powder is mixed and pulverized by a wet medium stirring mill or the like, and granulated for improving the fluidity. The slurry at the time of granulation is made of PVA or the like for the purpose of increasing the strength of the compact. A binder may be added.
  • ITO sintered body is mechanically processed to form each member of the divided ITO target. At this time, it is more preferable to chamfer the corners to reduce the surface roughness.
  • the number of divided ITO targets can be determined according to the size of the large ITO target, for example, in order to adapt to FPD.
  • ITO target is generally rectangular in plan view, it can be produced by arranging a plurality of rectangular divided ITO targets corresponding to the ITO target.
  • the divided ITO target is not limited to a rectangle, and other shapes, for example, a square, a triangle, a fan shape, or a combination thereof can be appropriately formed.
  • the present invention includes these.
  • each member of the ITO target produced as described above is coated with indium or an indium alloy on the side surface to form a coating layer of the substance.
  • the means for forming the coating layer is not particularly limited, but may be formed using, for example, a brazing material made of indium or an indium alloy for bonding to the following backing plate. As other means, a thermal spraying method, a plating method, or the like can be used. Further, only the side surface can be reduced by electrolysis to produce an In-based metal. After forming the coating layer, bonding is performed as shown in FIG. 1 using a brazing material made of indium or an indium alloy on a backing plate made of copper or a copper alloy.
  • indium or indium alloy is attached only to the side surface is that if indium or the like is not attached, abnormal discharge or the like based on the end portion due to the clearance between the individual members of the ITO target is likely to occur.
  • indium or the like is embedded in the entire clearance as in the conventional example, the electrical characteristics of the film formed on the upper part of the part differ from the electrical characteristics of the film formed on other parts. Because it will end up.
  • the clearance between the individual parts of the ITO target is 0.2 to 0.8 mm.
  • the clearance between the ITO divided targets is the clearance before the coating layer is formed.
  • a coating layer of one substance selected from indium, an indium alloy or a tin alloy is formed only on the clearance side surface of the ITO split target. Then, it arranges on a backing plate and joins to a backing plate.
  • the thickness of the coating layer formed on the side surface of each ITO divided target is 0.04 to 0.35 mm.
  • This covering layer has a thickness on one side facing the clearance. The purpose of this coating layer is to suppress the generation of nodules and abnormal discharge, and to ensure that the characteristics of the film formed on the substrate facing the clearance portion are not different from those of other portions. .
  • the thickness of the coating layer is adjusted in the above range according to the clearance of the divided target. As a result of the above, it is preferable that the (size) of the gap obtained by subtracting the thickness of the coating layer from the size of the clearance is 0.1 to 0.72 mm.
  • indium, an indium alloy, and a tin alloy are preferable. This is because these metals or alloys have a relatively low melting point and can be easily applied to the side surface.
  • indium alloy and the tin alloy In—Sn, In—Bi, In—Bi—Sn, In—Ga, In—Ga—Sn, In—Ga—Bi, Sn—Ga, Sn— Bi, Sn—Ga—Bi can be mentioned.
  • These alloys have a relatively low melting point and are more preferable materials, particularly when an alloy with indium is formed.
  • Example 1 As a raw material, mixed powder obtained by mixing indium oxide powder and tin oxide powder with a specific surface area of 5 m 2 / g at a weight ratio of 9: 1 is mixed and ground in a wet medium agitation mill by a bead mill, and then used as a press mold. Then, it was molded at a pressure of 700 kg / cm 2 to produce an ITO molded body. Next, this ITO molded body is heated from room temperature to 1500 ° C. at a temperature rising rate of 5 ° C./min in an oxygen atmosphere, maintained at 1500 ° C. for 20 hours, and then cooled in the furnace. Sintered with.
  • the surface of the sintered body thus obtained was ground to a thickness of 6.5 mm using a No. 400 diamond grindstone with a surface grinder, and the sides were further cut to 127 mm ⁇ 508 mm size with a diamond cutter, An ITO target member was obtained. Two such processed bodies were produced. These sintered bodies were placed on a hot plate set at 200 ° C., heated, and then 0.05 mm thick indium was attached only to the side surfaces.
  • an oxygen-free copper backing plate was placed on a hot plate set at 200 ° C., and indium was used as a brazing material, and the thickness thereof was applied to about 0.2 mm.
  • two ITO sintered bodies with indium attached to the side surfaces as described above were placed with their joint surfaces facing each other with a clearance of 0.4 mm, and allowed to cool to room temperature. From the above, the distance (interval) between the coating layers of the adjacent divided targets is 0.3 mm.
  • This target was attached to a SYNCHRON magnetron sputtering system (BSC-7011), the input power was 2.3 W / cm 2 with a DC power source, the gas pressure was 0.6 Pa, the sputtering gas was argon (Ar), and the gas flow rate was 300 sccm. The integrated power amount was 120 WHr / cm 2 .
  • the number of micro arc generation (times) was measured.
  • the criteria for determining the micro arc are a detection voltage of 100 V or more, and an emission energy (sputtering voltage when the arc discharge is generated ⁇ sputtering current ⁇ generation time) is 10 mJ or less.
  • Sputter integrated power is 160 WHr / cm 2
  • Corning # 1737 is installed as a substrate
  • the film thickness is 200 nm
  • the substrate surface facing the clearance portion and 2 cm and 4 cm away from each other in the opposite direction, a total of 5 points
  • Table 1 shows the results of R1 (5 points of sheet resistance, average value, variation in sheet resistance) of Example 1.
  • Table 1 also shows the results of the clearance, the adhesion state of indium or the like to the clearance, the cumulative number of micro arc generation up to 120 WHr / cm 2 , the film characteristics, and the like.
  • the material coated on the side surface of the split target of Example 1 is indium (In), the thickness of the coating layer is 0.05 mm, the clearance is 0.4 mm, and the number of occurrences of micro arcs is 260 times, the average value of the sheet resistance is 10.3 ⁇ / ⁇ , the variation of the sheet resistance is 7.3%, the average value of the sheet resistance is an appropriate value, the variation of the sheet resistance is small, the number of occurrences of micro arc The result that there was little was obtained.
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the small fluctuation of the sheet resistance means that the film is uniformly formed on the substrate. is there.
  • Example 2 The test was performed under the same conditions as in Example 1 except that the thickness of the clothing layer was changed to 0.1 mm. The results are similarly shown in Table 1 and FIG.
  • the distance (interval) between the coating layers of the adjacent divided targets is 0.2 mm.
  • the number of occurrences of the micro arc is 232 times, the average value of the sheet resistance is 10.2 ⁇ / ⁇ , the variation of the sheet resistance is 7.0%, the sheet resistance is an appropriate value, the variation of the sheet resistance is small, the micro arc
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the small fluctuation of the sheet resistance means that the film is uniformly formed on the substrate. is there.
  • Example 3 The conditions were the same as in Example 1 except that the clearance was changed to 0.2 mm.
  • the distance (interval) between the coating layers of the adjacent divided targets is 0.1 mm.
  • the results are similarly shown in Table 1 and FIG.
  • the number of occurrences of the micro arc is 210 times, the average value of the sheet resistance is 10.3 ⁇ / ⁇ , the variation of the sheet resistance is 4.9%, the sheet resistance is an appropriate value, the variation of the sheet resistance is small, the micro arc The result that there were few occurrences of was obtained.
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the small fluctuation of the sheet resistance means that the film is uniformly formed on the substrate. is there.
  • Example 4 The conditions were the same as in Example 1 except that the indium attached to the side surface of the ITO divided target was changed to an In—Sn alloy with a tin concentration of 10 at%. The results are similarly shown in Table 1 and FIG.
  • the distance (interval) between the coating layers of the adjacent divided targets is 0.3 mm.
  • the number of occurrences of the micro arc is 212 times, the average value of the sheet resistance is 10.4 ⁇ / ⁇ , the variation of the sheet resistance is 5.8%, the sheet resistance is an appropriate value, the variation of the sheet resistance is small, the micro arc
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the small fluctuation of the sheet resistance means that the film is uniformly formed on the substrate. is there.
  • Example 1 The conditions were the same as in Example 1 except that nothing was attached to the side surface of the ITO divided target and the clearance of the divided target was 0.4 mm. The results are also shown in Table 1. Further, since the coating layer is not formed on the side surface of the ITO divided target, the structure is as shown in FIG. The number of occurrences of micro arc is 750 times, the average value of the sheet resistance is 10.2 ⁇ / ⁇ , the variation of the sheet resistance is 3.9%, the average value of the sheet resistance is an appropriate value, and the variation of the sheet resistance is small However, the result that the number of occurrences of the micro arc was extremely increased was obtained.
  • Example 2 The test was performed under the same conditions as in Example 1 except that 0.02 mm of In was added to the side surface of the ITO divided target. The results are similarly shown in Table 1 and FIG.
  • the distance (interval) between the coating layers of the adjacent divided targets is 0.3 mm.
  • the number of occurrences of micro arc is 736
  • the average value of the sheet resistance is 10.2 ⁇ / ⁇
  • the variation of the sheet resistance is 3.9%
  • the average value of the sheet resistance is an appropriate value
  • the variation of the sheet resistance is small
  • the result that the number of occurrences of the micro arc was extremely increased was obtained.
  • Example 3 The conditions were the same as in Example 1 except that nothing was attached to the side surface of the ITO divided target and the clearance of the divided target was 0.2 mm. The results are also shown in Table 1. Further, since the coating layer is not formed on the side surface of the ITO divided target, the structure is as shown in FIG. The number of occurrences of micro arc was 508 times, the sheet resistance was 10.2 ⁇ / ⁇ , the variation in sheet resistance was 3.0%, the average value of the sheet resistance was an appropriate value, and the variation in sheet resistance was small, Although it decreased slightly compared with the comparative example 1, the result that the frequency
  • the number of occurrences of micro arc was 240 times, the average value of sheet resistance was 9.4 ⁇ / ⁇ , and the variation in sheet resistance was 38.2%. As a result, the sheet resistance variation became extremely large.
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the large fluctuation of the sheet resistance in this way means that the film is not uniformly formed on the substrate.
  • the number of occurrences of micro arc was 198 times, the average value of sheet resistance was 9.9 ⁇ / ⁇ , and the variation of sheet resistance was 17.6%.
  • the average value of resistance deteriorated, and the variation in sheet resistance became extremely large.
  • the characteristics of the film on the substrate can be evaluated by the sheet resistance.
  • the large fluctuation of the sheet resistance in this way means that the film is not uniformly formed on the substrate.
  • a plurality of ITO divided targets are arranged on a backing plate, and an ITO sputtering target is formed by joining to the backing plate, and the clearance side between the arranged ITO divided targets It is extremely important to provide a structure having a coating layer of one substance selected from indium, an indium alloy or a tin alloy only on the side surface. As a result, generation of nodules and abnormal discharge can be suppressed, and the characteristics of the film formed on the substrate facing the clearance part are not different from those of other parts, that is, the film characteristics are uniform. High film can be obtained.
  • the sputtering target of the present invention can suppress the generation of nodules and abnormal discharge even during continuous sputtering of the divided ITO target, and the characteristics of the film formed on the substrate facing the clearance portion are other portions. It is possible to provide an ITO sputtering target capable of obtaining a film having no difference in film characteristics, that is, having a highly uniform film characteristic, and has the great advantage that the yield of film formation can be improved and the product quality can be improved. And a large sputtering target capable of reducing the defect rate due to the generation of particles caused by the divided target portion can be provided, and is particularly useful as an FPD sputtering target.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne une cible de pulvérisation d'ITO qui est configurée par l'arrangement d'une pluralité de cibles divisées d'ITO sur une plaque de support et par la liaison des cibles divisées d'ITO à la plaque de support. Les cibles divisées d'ITO comportent une couche de revêtement d'une substance qui est choisie parmi l'indium, les alliages d'indium et les alliages d'étain, seulement sur des surfaces latérales côté espacement entre les cibles divisées d'ITO arrangées. La présente invention a pour but de proposer une cible de pulvérisation d'ITO, en particulier une cible de pulvérisation pour un écran plat (FPD), qui est apte à diminuer la génération de nodules ou de décharge électrique anormale même au cours d'une pulvérisation continue de cibles d'ITO divisées et qui est également apte à fournir un film qui est hautement uniforme en ce qui concerne les caractéristiques de film, à savoir un film dans lequel les caractéristiques de film de parties du film formées sur le substrat à des positions correspondant aux parties d'espacement ne sont pas différentes des caractéristiques de film des autres parties du film.
PCT/JP2011/063211 2010-11-19 2011-06-09 Cible de pulvérisation d'oxyde d'étain et d'indium (ito) WO2012066810A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020127017316A KR101347967B1 (ko) 2010-11-19 2011-06-09 Ｉｔｏ 스퍼터링 타깃
JP2011541417A JP5410545B2 (ja) 2010-11-19 2011-06-09 Ｉｔｏスパッタリングターゲット
CN201180025334.9A CN102906301B (zh) 2010-11-19 2011-06-09 Ito溅射靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010258439 2010-11-19
JP2010-258439 2010-11-19

Publications (1)

Publication Number Publication Date
WO2012066810A1 true WO2012066810A1 (fr) 2012-05-24

Family

ID=46083755

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2011/063211 WO2012066810A1 (fr) 2010-11-19 2011-06-09 Cible de pulvérisation d'oxyde d'étain et d'indium (ito)

Country Status (5)

Country Link
JP (1) JP5410545B2 (fr)
KR (1) KR101347967B1 (fr)
CN (1) CN102906301B (fr)
TW (1) TWI515315B (fr)
WO (1) WO2012066810A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013200328A (ja) * 2012-03-23 2013-10-03 Toray Ind Inc 感光性樹脂組成物およびそれからなるフィルム積層体

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105908137B (zh) * 2015-02-24 2020-12-15 Ｊｘ金属株式会社 溅射靶
CN109802016B (zh) * 2019-01-11 2020-10-02 芜湖德豪润达光电科技有限公司 透明导电层制备方法、发光二极管及其制备方法
JP6968300B2 (ja) * 2019-06-10 2021-11-17 株式会社アルバック スパッタリングターゲット及びスパッタリングターゲットの製造方法
JP7426418B2 (ja) * 2020-02-06 2024-02-01 三井金属鉱業株式会社 スパッタリングターゲット

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01230768A (ja) * 1988-03-08 1989-09-14 Asahi Glass Co Ltd スパッター用ターゲットユニットの製造方法および透明電導膜の製造方法
JPH04333565A (ja) * 1991-01-17 1992-11-20 Mitsubishi Materials Corp スパッタリングターゲットおよびその製造方法
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JPH0995782A (ja) * 1995-10-02 1997-04-08 Mitsui Mining & Smelting Co Ltd 分割ターゲットを用いたマグネトロンスパッタリング方法
JP2002146524A (ja) * 2000-08-25 2002-05-22 Nikko Materials Co Ltd パーティクル発生の少ないスパッタリングターゲット

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1161395A (ja) * 1997-08-08 1999-03-05 Tosoh Corp Ｉｔｏスパッタリングターゲット
JP4427831B2 (ja) * 1998-06-08 2010-03-10 東ソー株式会社 スパッタリングターゲットおよびその製造方法
KR101000339B1 (ko) * 2001-10-12 2010-12-13 토소가부시키가이샤 스퍼터링　타겟
JP4318439B2 (ja) * 2002-08-26 2009-08-26 三井金属鉱業株式会社 スパッタリングターゲットおよびその製造方法
KR101171769B1 (ko) * 2007-01-05 2012-08-07 삼성코닝정밀소재 주식회사 스퍼터링용 타겟 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01230768A (ja) * 1988-03-08 1989-09-14 Asahi Glass Co Ltd スパッター用ターゲットユニットの製造方法および透明電導膜の製造方法
JPH04333565A (ja) * 1991-01-17 1992-11-20 Mitsubishi Materials Corp スパッタリングターゲットおよびその製造方法
JPH08144052A (ja) * 1994-11-22 1996-06-04 Tosoh Corp Ｉｔｏスパッタリングターゲット
JPH0995782A (ja) * 1995-10-02 1997-04-08 Mitsui Mining & Smelting Co Ltd 分割ターゲットを用いたマグネトロンスパッタリング方法
JP2002146524A (ja) * 2000-08-25 2002-05-22 Nikko Materials Co Ltd パーティクル発生の少ないスパッタリングターゲット

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013200328A (ja) * 2012-03-23 2013-10-03 Toray Ind Inc 感光性樹脂組成物およびそれからなるフィルム積層体

Also Published As

Publication number Publication date
KR101347967B1 (ko) 2014-01-07
CN102906301B (zh) 2014-11-26
TWI515315B (zh) 2016-01-01
JP5410545B2 (ja) 2014-02-05
JPWO2012066810A1 (ja) 2014-05-12
CN102906301A (zh) 2013-01-30
TW201221670A (en) 2012-06-01
KR20120094086A (ko) 2012-08-23

Similar Documents

Publication Publication Date Title
TWI453175B (zh) 氧化物燒結體及其製造方法、靶及使用其所得之透明導電膜以及透明導電性基材
TWI515167B (zh) An oxide sintered body and a sputtering target, and a method for producing the oxide sintered body
JP5410545B2 (ja) Ｉｔｏスパッタリングターゲット
CN108242276B (zh) 层叠布线膜及其制造方法
CN103469167A (zh) 溅射靶、透明导电膜、透明电极和电极基板及其制造方法
CN101268211A (zh) 溅射靶、透明导电膜及透明电极
WO2016072441A1 (fr) Cible de pulvérisation d'ito et procédé pour la fabriquer, film électroconducteur transparent d'ito, et procédé de fabrication de film électroconducteur transparent d'ito
KR20140041950A (ko) 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
JP4470029B2 (ja) 分割ｉｔｏスパッタリングターゲット
TW201446998A (zh) Ｉｔｏ濺鍍靶及其製造方法
JP2000144400A (ja) スパッタリングターゲットおよびその製造方法
JP4770310B2 (ja) 透明導電膜、透明導電性基材ならびに酸化物焼結体
JP5438825B2 (ja) スパッタリングターゲット
JP6079228B2 (ja) 多分割スパッタリングターゲットおよびその製造方法
JPH1161395A (ja) Ｉｔｏスパッタリングターゲット
JP4211558B2 (ja) スパッタリングターゲット材料、その製造方法、及びそれを用いた透明導電膜の製造方法
JP2013185160A (ja) スパッタリングターゲット
JP2016065290A (ja) Ａｇ合金スパッタリングターゲット
JP3603693B2 (ja) Ｉｔｏスパッタリングターゲット
KR20150120073A (ko) Ｉｚｏ 스퍼터링 타겟 제조방법
JP2001040469A (ja) 多分割ｉｔｏスパッタリングターゲットおよびその製造方法
JP2003119560A (ja) スパッタリングターゲット
CN115466926A (zh) 一种银合金靶材及其制备方法和应用
KR100693278B1 (ko) 아이티오 스퍼터링 타겟
KR20040092445A (ko) 투명 도전막 및 스퍼터링 타겟

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180025334.9

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2011541417

Country of ref document: JP

ENP Entry into the national phase

Ref document number: 20127017316

Country of ref document: KR

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11840967

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11840967

Country of ref document: EP

Kind code of ref document: A1