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WO2011136512A2 - Appareil de génération de plasma haute densité - Google Patents

Appareil de génération de plasma haute densité Download PDF

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Publication number
WO2011136512A2
WO2011136512A2 PCT/KR2011/002974 KR2011002974W WO2011136512A2 WO 2011136512 A2 WO2011136512 A2 WO 2011136512A2 KR 2011002974 W KR2011002974 W KR 2011002974W WO 2011136512 A2 WO2011136512 A2 WO 2011136512A2
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WIPO (PCT)
Prior art keywords
antenna
opening
plane
upper antenna
disposed
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Ceased
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PCT/KR2011/002974
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English (en)
Korean (ko)
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WO2011136512A3 (fr
Inventor
김정태
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Tainics Co Ltd
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Tainics Co Ltd
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Publication of WO2011136512A2 publication Critical patent/WO2011136512A2/fr
Publication of WO2011136512A3 publication Critical patent/WO2011136512A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Definitions

  • the present invention relates to an inductively coupled high density plasma generator, and more particularly, to an inductively coupled high density plasma generator for stably etching the surface of a sapphire wafer used for producing high brightness LED chips.
  • Plasma generators generally include a plasma enhanced chemical vapor deposition (PECVD) apparatus for thin film deposition, an etching apparatus for etching and patterning the deposited thin film, a sputter, and an ashing apparatus.
  • PECVD plasma enhanced chemical vapor deposition
  • the plasma generator is divided into a capacitively coupled plasma (CCP) device and an inductively coupled plasma device (ICP) device according to the application method of the RF power.
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma device
  • the general configuration of an ICP plasma generator is as follows.
  • the plasma generating apparatus includes a chamber defining a closed reaction region, a susceptor located inside the chamber and mounting a substrate on an upper surface thereof, a gas distribution plate for injecting a source material from the upper part of the susceptor, and the gas distribution plate. It includes a gas supply pipe for supplying a source material to the.
  • an RF antenna for supplying RF power to convert the source material into the plasma is located on the upper part of the chamber lid, and the RF antenna is connected to the RF power supply through a feed line.
  • the matcher located between the RF antenna and the RF power supply serves to match the load impedance and the source impedance.
  • the chamber lead under the RF antenna is made of an insulating material so that the induced magnetic field can be transferred into the chamber. Insulating chamber leads reduce the capacitive coupling between the antenna and the plasma to help transfer energy from the RF power source to the plasma by inductive coupling.
  • a vertical time-varying magnetic field is generated around the antenna, and a horizontal electric field is induced inside the chamber by the time-varying magnetic field.
  • ions and radicals are generated to perform etching and deposition processes on the substrate.
  • a bias power source separate from the RF power source may be applied to the susceptor.
  • a heater or a cooling passage is built in the susceptor to adjust the temperature of the substrate, and an exhaust port of the lower part of the chamber serves to exhaust process residual gas through a vacuum pump.
  • a process of generating plasma by the antenna system as described above is briefly described as follows.
  • a high frequency power is applied to the antenna system, a current flows in the antenna system, and this current forms a magnetic field that changes in time around the antenna system.
  • the magnetic field forms an induction electric field inside the reaction chamber, and the induction electric field heats electrons to the antenna.
  • inductively coupled plasma is generated.
  • the plasma etching apparatus performs a plasma etching or plasma deposition process using ions and radicals generated by electrons in the generated plasma collide with surrounding neutral gas particles.
  • a high frequency power is applied to the chuck using a separate high frequency power source, it is also possible to control the energy of ions incident on the substrate.
  • a detailed configuration of the antenna system 150 will be described later with reference to FIG. 3.
  • FIG. 12 is a perspective view showing a specific configuration of the antenna system disclosed in the above publication.
  • the antenna system 150 illustrated in FIG. 12 includes four circular disconnected coils having a multilayer structure, and includes a first lower antenna 151 disposed on a first plane (XY plane of FIG. 1) adjacent to an upper portion of the reaction chamber. ), A second lower antenna 152 disposed at a predetermined interval inside the first lower antenna 151 on the first plane, and a second plane image parallelly moved upward from the first plane (see FIG. 1). A first upper antenna 153 disposed on an X'-Y 'plane, and a second upper antenna 154 disposed at predetermined intervals inside the first upper antenna 153 on a second plane. .
  • the antennas 151, 152, 153 and 154 of the four circular disconnected coils are disposed at positions corresponding to the edges of the insulating plate, and the four antennas 151, 152, 153 and 154 are connected in parallel to one high frequency power source 180 and these antennas 151, 152, 153 and 154.
  • Each of the apparatus includes power input terminals 151a, 152a, 153a, and 154a to which high frequency power is applied, and ground terminals 151b, 152b, 153b, and 154b electrically connected to the grounding case 160.
  • An object of the present invention is to solve the problems described above, by applying a magnetic field line by the arrangement of the induced electric field and the permanent magnet to generate a stable high-density plasma to produce an LED device sapphire wafer etching process It is to provide a high-density plasma generator that ensures stability.
  • the high-density plasma generating apparatus includes a reaction chamber providing a space in which a plasma is generated, an antenna system provided on an upper portion of the reaction chamber to induce an electric field to generate a plasma, the reaction chamber and the antenna A dielectric insulating plate disposed between the system and a plurality of permanent magnets disposed around the insulating plate, wherein the plurality of permanent magnets are sequentially arranged such that the magnetic poles of each permanent magnet have the same polarity and the opposite polarity in adjacent permanent magnets.
  • the antenna system is formed of a plurality of antenna units disposed at different positions, and each antenna of the plurality of antenna units includes a power applying unit to which high frequency power is applied, a ground output unit, and a circular coil.
  • the power applying section and the ground output section form openings. Gong.
  • each of the plurality of permanent magnets is provided outside the plurality of antenna units, and each of the permanent magnets is provided at intervals of 1 mm to 15 mm. .
  • the horizontal plane on which the circular coil is formed and the power applying unit and the ground output unit have a height difference of 100 mm to 300 mm as a direct distance, and the power applying unit and the ground output.
  • the part is characterized by forming the openings facing each other at a distance of 15 mm to 25 mm.
  • the plurality of antenna units may be disposed on a first lower antenna disposed on a first plane adjacent to an upper portion of the reaction chamber and on the first plane inside the first lower antenna. And a second lower antenna disposed.
  • the plurality of antenna units are disposed on a second plane parallel to an upward direction from the first plane and the first upper antenna on the second plane. And further comprising a second upper antenna disposed inside the antenna.
  • the plurality of antenna units are arranged on a third plane that is parallelly moved in an upward direction from the second plane, and the third upper antenna on the third plane. And a fourth upper antenna disposed inside the antenna.
  • the plurality of antenna units may further include a third lower antenna disposed inside the second lower antenna on the first plane.
  • the plurality of antenna units may include a first upper antenna disposed on a second plane parallelly moved upward from the first plane and the first upper part on the second plane. And a second upper antenna disposed inside the antenna and a third upper antenna disposed inside the second upper antenna on the second plane.
  • the plurality of antenna units are arranged on a third plane that is parallelly moved in an upward direction from the second plane, and the fourth upper antenna on the third plane. And a fifth upper antenna disposed inside the antenna and a sixth upper antenna disposed inside the fifth upper antenna on the third plane.
  • the opening of the first lower antenna and the opening of the second lower antenna are arranged at intervals of 180 ° along a concentric circle of the coil.
  • the opening of the first lower antenna, the opening of the second lower antenna, the opening of the first upper antenna and the opening of the second upper antenna are 90 ° along the concentric circle of the coil. Characterized in that arranged at intervals.
  • the openings of the fourth upper antenna may be disposed at 60 ° intervals along the concentric circles of the coil.
  • the opening of the first lower antenna, the opening of the second lower antenna and the opening of the third lower antenna are arranged at intervals of 120 ° along a concentric circle of the coil. do.
  • an opening of the first lower antenna, an opening of the second lower antenna, an opening of the third lower antenna, an opening of the first upper antenna, and an opening of the second upper antenna may be disposed at 60 ° intervals along a concentric circle of the coil.
  • an opening of the first lower antenna, an opening of the second lower antenna, an opening of the third lower antenna, an opening of the first upper antenna, and an opening of the second upper antenna are disposed at 40 ° intervals along a concentric circle of the coil.
  • the first plane and the second plane are positioned at a vertical distance of 5 mm to 20 mm.
  • the second plane and the third plane are positioned at a vertical distance of 5 mm to 20 mm.
  • the coil has a diameter of 2 mm to 7 mm, and is made of circular copper, and the surface of the coil is plated with silver, gold or platinum.
  • the first upper antenna and the second upper antenna are disposed at positions corresponding to the first lower antenna and the second lower antenna in a horizontal plane, respectively. .
  • the third upper antenna, the fourth upper antenna, the first upper antenna, and the second upper antenna are horizontal to the first lower antenna and the second lower antenna. It is characterized in that it is disposed in the corresponding position respectively.
  • the first upper antenna, the second upper antenna, and the third upper antenna correspond to the first lower antenna, the second lower antenna, and the third lower antenna in a horizontal plane. It is characterized in that it is disposed in each position.
  • the fourth upper antenna, the fifth upper antenna and the sixth upper antenna, the first upper antenna, the second upper antenna, and the third upper antenna are the first antenna.
  • the high-density plasma generating apparatus in the manufacture of LEDs, a uniform etching effect by a stable plasma is obtained in manufacturing a lens pattern on a sapphire wafer requiring high-density plasma etching.
  • the array of permanent magnets plays a role of pushing the plasma flux lost to the chamber wall to the charged substrate and confining it to a predetermined region, the density of the plasma can be compensated for from the center to the edge of the loaded substrate. Effect is obtained.
  • the efficiency of each coil can be maintained by trapping the power lost to the ground, which is the chamber wall, to the chamber wall, the efficiency of each coil can be increased, thereby increasing the production volume by increasing the size of the equipment. Effect is obtained.
  • the coil is made of circular copper with a diameter of 2 mm to 7 mm, and the surface of the coil is plated with silver, gold or platinum, the power transmission efficiency is high, and the heat generated from the antenna part is cooled to cool the plasma. The effect of increasing the efficiency of is also obtained.
  • FIG. 1 is a schematic configuration diagram of a high density plasma generating apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 is a view showing an arrangement relationship between the antenna system and the permanent magnet shown in FIG.
  • FIG. 3 is a view for explaining an effective magnetic line distribution by the permanent magnet arrangement according to the present invention.
  • FIG. 4 is a view showing an arrangement structure of an antenna unit according to Embodiment 2 of the present invention.
  • FIG. 5 is a view showing the arrangement of the antenna unit according to the third embodiment of the present invention.
  • FIG. 6 is a view showing an arrangement structure of an antenna unit according to a fourth embodiment of the present invention.
  • FIG. 7 is a view showing the arrangement of the antenna unit according to the fifth embodiment of the present invention.
  • FIG. 9 is a view showing a measurement result of the uniformity of the substrate in the three-pair single-layer structure and three-pair multilayer structure of the antenna unit,
  • FIG. 10 is a view showing an arrangement structure of an antenna unit according to a sixth embodiment of the present invention.
  • FIG. 11 is a diagram illustrating measurement results of an antenna structure of FIG. 4 and an antenna structure of FIG. 7;
  • FIG. 12 is a perspective view showing a specific configuration of a conventional antenna system.
  • each circular coil divided by a plurality of parallel coils connected in parallel is connected to one power applying unit and one ground output unit (grounding unit), and one power applying unit and one ground output unit
  • each ground output unit grounding unit
  • it is composed of an inner circular coil and an outer circular coil and configured to have a symmetry in the 180 ° direction to prevent the deflection in one direction during plasma discharge. Uniformity was ensured.
  • the antenna unit of the antenna system has a pair of inner circular coils and outer circular coils each having an opening, and has a loop antenna structure having the same current direction. Coils of a single configuration constituting the induction electric field always have openings as the power applying portion and the ground portion are formed, and the nonuniformity of the plasma increases in this local region.
  • the double-layer structure consists of a double-layered structure in which a pair of coils are rotated by 90 ° to compensate for the power modulation of the circular antenna having the power application portion and the opening where the ground current is formed, thereby obtaining stable plasma uniformity.
  • the local nonuniformity of the plasma caused by the coil arrangement in the local region of each power applying section and the ground output section is configured as a straight portion by bending outward with respect to the reference coil.
  • the loop-type antenna having the same current direction can be composed of triple or quadruple duplex
  • the triple duplex coil is composed of triple duplex at the positions rotated by 60 ⁇ , respectively, and the area of the circular antenna with the opening. Stable plasma uniformity was obtained while correcting for power modulation.
  • the plasma density is locally uneven by forming a power applying part and a ground output part through which current flows out.
  • the direction of rotation is 90 ° in double or triple double layers, respectively.
  • openings may be formed in a 60 ° rotational direction to reduce local non-uniformity of the plasma density.
  • the plasma density by the induced magnetic field caused by the RF by applying RF (RF) power to the circular coil is based on a substrate loaded in the reaction chamber. It is dominantly changed according to the diameter, and the external circular coil serves to correct the plasma uniformity. Plasma density is significantly attenuated at the edges of the substrate loaded by the power loss with the distance between the circular coils and the outer ground. Plasma flux is lost to the chamber wall by arranging permanent magnets to compensate for this. By pushing the to the loaded substrate it serves to confine in a certain area. This compensates for the reduction in plasma density from the center of the loaded substrate to the edge.
  • a plurality of substrates may be simultaneously etched using an insulating plate, which is a plurality of divided dielectrics, in one plasma vacuum chamber by branching and connecting one power applying unit to several.
  • an insulating plate which is a plurality of divided dielectrics, in one plasma vacuum chamber by branching and connecting one power applying unit to several.
  • Coils that form an induction electric field consisting of a conventional spiral coil and a double circular coil have a solenoid-shaped electromagnet coil outside the chamber to compensate for the low plasma density of the edge region of the substrate.
  • Conventional spiral antennas which consist of multiple spiral coils branching in parallel, have the strength of the induced electric field at the edge of the substrate charged into the chamber while the magnetic fields formed around the coils cancel and reinforce each other, even if the direction of current is the same. Since the plasma density is reduced, a solenoid-shaped electromagnet coil is placed to control the uniformity of the plasma density distribution.
  • the present invention is designed to solve the problems of the conventional antennas, such that one power applying unit and one ground output unit are arranged to face each other in the center with respect to the substrate inside the chamber, and a plurality of parallels according to each process condition are provided.
  • one power applying unit and one ground output unit have a distance of at least 100 mm to 300 mm from the horizontal plane of the nearest circular coil to solve the unevenness of the plasma density distribution according to the connection shape of the power applying unit and the ground output unit. .
  • Each diameter of the coil uses a round copper material between 2mm and 7mm in diameter, and has the function of cooling the heat generated by silver plating, gold plating and platinum plating to improve power transmission efficiency.
  • the single-layer coil consists of an inner circular coil and an outer circular coil.
  • the diameter of each circular configuration of the inner circular coil and the outer circular coil is determined as the uniformity according to the process result of the substrate loaded into the chamber, and the diameter of the permanent magnet is added to reinforce the uniformity of the process result according to the plasma distribution from the edge of the substrate. Adjust the array.
  • the coil of the multilayer structure is configured, and the multilayer composition has the effect of further improving the uniformity of the plasma distribution of the single layer coil. It is constructed with the vertical distance of mm-20mm. At this time, the diameter of the two layers of coils should be at a vertical distance or at a certain angle with respect to the substrate to reduce the influence of capacitive components on the diameter of the circular coil itself, thereby making the distribution of plasma density uniform and having a reinforcing effect. .
  • At least one variable capacitor is connected between coils formed by conventional parallel and spiral coils configured in parallel to configure a plurality of loop antennas by controlling current.
  • each magnetic line is configured to form the shape and intensity of each magnetic line as a variety of arrangement of permanent magnets.
  • the permanent magnets are arranged in a circular manner with a certain distance from the circular antenna coil, and the distance between the magnets constitutes an arrangement in which the magnetic poles are changed at intervals of 1 mm to 15 mm, and at a predetermined distance from the edge of the substrate loaded in the chamber.
  • the magnetic field is arranged to have a value less than or equal to Gauss.
  • Plasma generated by such a configuration can obtain a stable plasma discharge in the band lower than the pressure of the process using a common plasma.
  • the present invention is applied to the surface etching process of the sapphire wafer for LED device production, since the process pressure has uniformity of stable plasma density distribution of high density in the range of several mT to several hundred mT, the sapphire wafer used for producing the LED device is etched. Is very efficient.
  • the present invention is an inductively coupled high density plasma generator designed for etching a surface of a sapphire wafer used for the production of high brightness LED chip
  • Figure 1 is a schematic diagram of a high density plasma generator according to the first embodiment of the present invention
  • 2 is a diagram illustrating an arrangement relationship between the antenna system 150 and the permanent magnet 190 illustrated in FIG. 1
  • FIG. 3 is a diagram illustrating an effective magnetic line distribution by the permanent magnet arrangement according to the present invention. to be.
  • the high-density plasma generator 100 includes a reaction chamber 110 that provides a space in which plasma is generated, a substrate tray 120 in which a plurality of substrates to be plasma-etched are loaded, and a reaction.
  • a chuck 130 (Chuck) provided below the inside of the chamber 110 to support the substrate tray 120, an antenna system 150 provided above the reaction chamber 110 to induce an electric field generating a plasma, and a reaction chamber ( High frequency for supplying high frequency power (RF power) to the dielectric insulating plate 140 disposed between the 110 and the antenna system 150, the ground case 160 provided above the antenna system 150, and the antenna system 150.
  • a plurality of power sources 170 and RF are disposed around the impedance matching unit 180 and the insulating plate 140 to match the internal impedance of the high frequency power source 180 with the impedance of the path through which the high frequency power is supplied.
  • Permanent magnet (190) The rain.
  • the reaction chamber 110 has a cylindrical shape as a whole and provides a space in which a plasma for plasma etching the substrate 3 is generated and reacted.
  • the side wall 111 of the reaction chamber 110 includes a gas supply port 114 for injecting process gas into the reaction chamber 110 and a slot 112 for introducing the substrate tray 120 into the chamber space 112. Is formed.
  • the chuck 130 is provided below the chamber space 112 of the reaction chamber 110 to support the substrate tray 120.
  • the chuck 130 may provide bias high frequency power so that the plasma generated in the reaction chamber 110 may collide with the surface of the substrate.
  • the chuck 130 is electrically connected to the high frequency power source 170 that supplies the high frequency power to the antenna system 150 and another separate high frequency power source to serve as a high frequency electrode.
  • the antenna system 150 has a coil-like structure and a coil-like structure as a component that induces an electric field that generates a plasma in the reaction chamber 110 by receiving a high frequency power from the high frequency power source 170.
  • FIG. 1 is a diagram illustrating an antenna array relationship in a coil form provided in the antenna system 150 at an upper portion thereof.
  • the plasma generating apparatus 100 When the plasma is generated by the antenna system 150 will be described briefly as follows.
  • a current flows in the antenna system 150, and this current forms a magnetic field that changes in time around the antenna system 150.
  • This magnetic field forms an induction electric field in the reaction chamber 110, and the induction electric field heats electrons to generate a plasma inductively coupled with the antenna.
  • the plasma generating apparatus 100 performs a plasma etching or plasma deposition process using ions and radicals generated by electrons in the generated plasma collide with surrounding neutral gas particles.
  • a high frequency power is applied to the chuck 130 using a separate high frequency power source 170, it is also possible to control the energy of ions incident on the substrate.
  • the detailed configuration of the antenna system 150 will be described later.
  • an induction electric field is formed around the antenna system 150 by the high frequency power applied from the high frequency power source 180, and the positive and negative charges are alternately charged at the high frequency frequency on the surface of the antenna system 150.
  • a capacitive electric field is formed.
  • such a capacitive electric field may contribute to the initial discharge of the plasma, but the sputtering phenomenon damages the dielectric existing between the plasma and the antenna system 150, while decreasing the uniformity of the plasma. Falling is an important factor.
  • the dielectric insulating plate 140 is a means for resolving the negative effects caused by the capacitive electric field, and is disposed between the reaction chamber 110 and the antenna system 150 to reduce the capacitive electric field and transfer the induced electric field to the plasma more effectively. It plays a role. That is, the dielectric insulating plate 140 reduces capacitive (capacitive) coupling between the antenna system 150 and the plasma to more efficiently transfer energy by the high frequency power source 170 to the plasma by inductive coupling.
  • the dielectric insulating plate 140 is made of a disc shape made of a material such as ceramic, also referred to as a 'Faraday shield' or 'ceramic window', is supported by the lower flange 162 of the ground case 160 and fixed jig 163 Is fixed by.
  • the grounding case 160 is a cylindrical metal grounded as a whole, and is provided on the upper side of the antenna system 150 to prevent the antenna system 150 from being exposed to the outside and at the same time, grounding each antenna portion of the antenna system 150. Provide a grounded area where the stages are electrically connected.
  • the plasma generator 100 further includes a vacuum pump for maintaining the inside of the reaction chamber 110 in a vacuum and discharging gas generated during the reaction, and a gas outlet formed in the reaction chamber 110. Equipped.
  • Embodiment 1 is an example in which the antenna system 150 is provided with an antenna unit consisting of a pair of single-layer coils.
  • the antenna unit 10 of Embodiment 1 has a first lower antenna 11 and a first lower antenna 11 disposed on a first plane adjacent to an upper portion of the reaction chamber 110.
  • a second lower antenna 12 disposed inside the first lower antenna 11, and each antenna is connected to a high frequency power source 170 so that a high frequency power is applied to the power applying unit 18 and a ground;
  • a ground output unit 19 connected to the case 160 and a circular coil are included, and the opening 17 is formed by a distance between the power applying unit 18 and the ground output unit 19.
  • the antenna unit 10 of the first embodiment is composed of a pair of circular antennas connected in parallel, and each circular antenna is connected to one power applying unit 18 and one ground output unit 19, respectively.
  • the outer circular coil of the first lower antenna 11 and the inner circular coil of the second lower antenna 12 having respective openings are configured in pairs, and have a loop-type antenna structure having the same current direction.
  • Coils of a single configuration constituting the induction electric field always have an opening 17 as the power applying unit 18 and the ground output unit 19 are formed, and the nonuniformity of the plasma increases in this local area.
  • the antenna portion of the first embodiment is provided with two openings. That is, the openings of the first lower antenna 11 and the openings of the second lower antenna 12 are arranged at intervals of about 180 ° along the concentric circles of the coil, as shown in FIG. 2.
  • the horizontal plane in which the circular coil of the first lower antenna 11 is formed, and the power applying unit 18 and the ground output unit 19 have a height difference of 100 mm to 300 mm as a direct distance l
  • the application unit 18 and the ground output unit 19 are formed with openings 17 facing each other with a distance of 15 mm to 25 mm. This is because the plasma density is biased to one side when the power applying unit 18 and the ground output unit 19 cross each other within the range of 10 mm, and the plasma density is curved in a symmetrical form when the power applying unit 18 and the ground output unit 19 cross each other.
  • the plasma density by the induced magnetic field induced by the coil by applying RF (RF) power to the circular coil changes the plasma density according to the diameter of the circular inner coil based on the substrate loaded in the reaction chamber 110.
  • the external circular coil serves to correct the plasma uniformity.
  • the plasma density is significantly reduced at the edge of the substrate charged by the power loss according to the distance between the circular coils and the ground of the chamber wall side 111.
  • the permanent magnet 190 is compensated for.
  • the plasma flux is pushed to the loaded substrate to serve to confine in a certain area. This compensates for the reduction in plasma density from the center of the loaded substrate to the edge.
  • the plurality of substrates may be simultaneously etched using an insulating plate, which is a plurality of divided dielectrics, in one plasma vacuum chamber 110 by branching one power applying unit 18 into several in parallel.
  • an insulating plate which is a plurality of divided dielectrics
  • the inductance increases and the plasma efficiency decreases, thereby forming a magnetic field by arranging the permanent magnets 190 in each coil. Since the efficiency of each coil can be maintained by confining the power lost to the ground, which is the wall 111, to an arbitrary region, the equipment can be enlarged by arbitrary division.
  • Each coil of the antenna unit 10 has a diameter of 2 mm to 7 mm, using a circular copper material, and heat, generated from the antenna unit 10 by silver plating, gold plating, and platinum plating to increase power transmission efficiency. It has a function of cooling.
  • the permanent magnet 190 applied to the present invention is configured to form the shape and intensity of each magnetic line in a variety of arrangements. That is, the edge of the substrate to be loaded in the chamber is configured in a circular arrangement with a predetermined distance from the outermost circular coil of the antenna unit 10 and the distance between the magnets to change the magnetic poles at intervals of 1 mm to 15 mm Arrange the magnetic field to be formed with a value less than the minimum Gaussian at a certain distance. This is configured so as not to be influenced by the process due to the magnetic force when the process is performed as a density in the plasma formed by the induction electric field.
  • each of the plurality of permanent magnets 190 is provided on the outside of the plurality of antenna units, the number is different depending on the size of the outer diameter of the dielectric insulating plate 140 or the size and magnetic force of each permanent magnet 190. Therefore, no specific numerical limitation is made.
  • each of the permanent magnets is provided with an interval d of 1 mm to 15 mm, and the plurality of permanent magnets have adjacent magnetic poles of each permanent magnet so that an effective magnetic force line distribution as shown in FIG. 3 is formed.
  • the permanent magnets are sequentially arranged to have the same polarity and the opposite polarity.
  • the plasma processable region is extended beyond the outer diameter of the substrate W to increase the efficiency of the treatment process.
  • Embodiment 2 of the present invention will be described with reference to FIG.
  • FIG. 4 is a view showing the arrangement of the antenna unit according to the second embodiment of the present invention.
  • the structure of this embodiment 2 is different from the structure of the antenna portion of the antenna system 150 of the first embodiment, and the other structure is the same. Therefore, in the following description, only the structure of the antenna unit 20 of the second embodiment will be described, and the description of the same components as in the first embodiment will be omitted.
  • the antenna unit 20 of the second embodiment is constituted by a pair of double layer antennas similarly to the structure of the antenna described in the prior art. That is, the antenna unit 20 of Example 2 includes a first lower antenna disposed on a first plane adjacent to the upper portion of the reaction chamber 110 and an inner portion of the first lower antenna disposed on the first plane. And a second upper antenna disposed on an inner side of the first upper antenna on a second plane and a second upper antenna disposed on a second plane parallelly moved upwardly from the first plane.
  • the antenna unit 20 of Embodiment 2 is provided with four openings, the opening of the first lower antenna, the opening of the second lower antenna, and the opening of the first upper antenna.
  • the openings of the second upper antenna are spaced about 90 ° along the concentric circle of the coil.
  • the first plane and the second plane is positioned at a vertical distance of 5mm ⁇ 20mm. That is, in the present invention, to increase the plasma density and to shorten the process time, a coil having a multilayer structure is configured, and the multilayer structure has an effect of further improving the uniformity of plasma distribution of the single layer coil, and the same coil as the method of configuring the single layer coil. It is configured with a vertical distance of 5mm ⁇ 20mm by constructing. At this time, the diameter of the coil of the two layers are placed at a vertical distance or at a certain angle relative to the substrate in order to reduce the influence of the capacitive component according to the diameter of the circular coil itself to have a uniform distribution of plasma density and have a reinforcing effect.
  • the bilayer structure as described above has a uniform uniformity from the center of the substrate to the outside of the by-product after fixing, compared to the single layer structure.
  • FIG. 5 is a view showing the arrangement of the antenna unit according to the third embodiment of the present invention.
  • this third embodiment is different only from that of the antenna portion of the antenna system 150 of the first embodiment, and the other structures are the same. Therefore, in the following description, only the structure of the antenna unit 30 of the third embodiment will be described, and the description of the same components as those of the first embodiment will be omitted.
  • the antenna unit 30 of the third embodiment consists of a pair of triple layer antennas. That is, the antenna unit 30 of Example 3 includes a first lower antenna disposed on a first plane adjacent to the upper portion of the reaction chamber 110 and an inner portion of the first lower antenna disposed on the first plane. 2 a lower antenna, a first upper antenna disposed on a second plane parallelly moved upwardly from a first plane, and a second upper antenna and a second plane disposed inside the first upper antenna on the second plane; And a third upper antenna disposed on a third plane parallelly moved upward in the upper direction, and a fourth upper antenna disposed inside the third upper antenna on the third plane.
  • the antenna unit 30 of the third embodiment is provided with six openings, and the opening of the first lower antenna, the opening of the second lower antenna, and the opening of the third lower antenna are It is arranged about 60 ° along the concentric circle of the coil.
  • the pair of triple layer antenna structures as described above increases the uniformity from the center to the outside of the substrate as compared with the second embodiment.
  • the process substrate loaded into the chamber appears to consist of two coils in a plate that is a flat dielectric when looking at the coils, thereby reducing the plasma radiation efficiency due to the increase in self inductance from the multiple induction coil configurations. To prevent it.
  • Embodiment 4 of the present invention will be described with reference to FIG.
  • FIG. 6 is a view showing the arrangement of the antenna unit according to the fourth embodiment of the present invention.
  • the structure of this fourth embodiment is different only from that of the antenna portion of the antenna system 150 of the first embodiment, and the other structures are the same. Therefore, in the following description, only the structure of the antenna unit 40 of the fourth embodiment will be described, and the description of the same components as in the first embodiment will be omitted.
  • the antenna unit 40 of the fourth embodiment is composed of three pairs of single-layer antennas. That is, the antenna unit 40 of the third embodiment includes a first lower antenna disposed on a first plane adjacent to the upper portion of the reaction chamber 110 and an inner portion of the first lower antenna disposed on the first plane. And a second lower antenna and a third lower antenna disposed inside the second lower antenna.
  • three openings are provided in the antenna unit 40 of the fourth embodiment, and the opening of the first lower antenna, the opening of the second lower antenna, and the opening of the third lower antenna are Spaced about 120 ° along the concentric circle of the coil.
  • the three-pair single-antenna structure as described above increases the uniformity from the center to the outside of the substrate as compared with the first embodiment.
  • FIG. 7 is a view showing the arrangement of the antenna unit according to the fifth embodiment of the present invention
  • Figure 8 is a photograph showing the experimental results for explaining the difference between the single-layer structure and the multi-layer structure of the antenna unit
  • Figure 9 is a three pairs of antenna units It is a figure which shows the measurement result of the uniformity of a board
  • the structure of this fifth embodiment is different from that of the antenna portion of the antenna system 150 of the first embodiment, and the other structures are the same. Therefore, in the following description, only the structure of the antenna unit 50 of the fifth embodiment will be described, and the description of the same components as those of the first embodiment will be omitted.
  • the antenna unit 50 of Embodiment 5 includes a first lower antenna disposed on a first plane adjacent to the upper portion of the reaction chamber 110 and a second lower antenna disposed inside the first lower antenna on the first plane.
  • the antenna unit 50 of the fifth embodiment is provided with six openings, the opening of the first lower antenna, the opening of the second lower antenna, the opening of the first upper antenna, and the second opening.
  • the openings of the upper antenna, the openings of the third upper antenna, and the openings of the fourth upper antenna are disposed at intervals of about 60 ° along the concentric circles of the coil.
  • the first plane and the second plane is positioned at a vertical distance of 5mm ⁇ 20mm. That is, in the present invention, to increase the plasma density and to shorten the process time, a coil having a multilayer structure is configured, and the multilayer structure has an effect of further improving the uniformity of plasma distribution of the single layer coil, and the same coil as the method of configuring the single layer coil. It is configured with a vertical distance of 5mm ⁇ 20mm by constructing. At this time, the diameter of the coil of the two layers are placed at a vertical distance or at a certain angle relative to the substrate in order to reduce the influence of the capacitive component according to the diameter of the circular coil itself to have a uniform distribution of plasma density and have a reinforcing effect.
  • the triple layer structure as described above had a uniform uniformity from the center of the substrate to the outside of the single layer structure, as shown in FIG. 8.
  • Example 6 of the present invention will be described with reference to FIG.
  • FIG. 10 is a view showing the arrangement of the antenna unit according to the sixth embodiment of the present invention.
  • the structure of this sixth embodiment is different only from that of the antenna portion of the antenna system 150 of the first embodiment, and the other structures are the same. Therefore, in the following description, only the structure of the antenna unit 60 of the sixth embodiment will be described, and the description of the same components as in the first embodiment will be omitted.
  • the antenna unit 60 of the sixth embodiment includes a first lower antenna disposed on a first plane adjacent to an upper portion of the reaction chamber 110, and a second lower antenna disposed inside the first lower antenna on the first plane.
  • the first plane and the second plane is located at a vertical distance of 5mm ⁇ 20mm
  • the second plane and the third plane is a vertical distance of 5mm ⁇ 20mm Position it.
  • FIG. 10 nine openings are provided in the antenna unit 60 of the sixth embodiment, and the opening of the first lower antenna, the opening of the second lower antenna, the opening of the third lower antenna, and the first opening are shown in FIG. 10.
  • the openings of the upper antenna, the openings of the second upper antenna, the openings of the third upper antenna, the openings of the fourth upper antenna, the fifth upper antenna, and the sixth upper antenna are disposed at intervals of about 40 ° along the concentric circle of the coil.
  • Plasma generated by such a configuration can obtain a stable plasma discharge in the band lower than the pressure of the process using a common plasma.
  • the process pressure is stable in the range of several mT to hundreds of mT, so that the density of stable plasma density distribution is high. Very efficient.
  • condition 2 (antenna structure as shown in Figure 7) is better than the condition 1 (antenna structure as shown in Figure 4), the reason why the etching depth uniformity of condition 2 is better It means that the uniformity of the plasma density is better compared to condition 1.
  • condition 2 has a higher etching depth than condition 1, and the reason that the etching depth of condition 1 is higher than condition 2 means that the plasma density is higher than condition 1.
  • the first lower antenna and the second lower antenna are disposed at positions of 300 mm and 200 mm at the center of the circular coil in the pair of antenna units, respectively, and the first lower antenna and second are arranged in the three pairs of antenna units.
  • the lower antenna and the third lower antenna were disposed at positions of 340 mm, 280 mm, and 160 mm, respectively, in the center of the circular coil, but the present invention is not limited thereto.

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  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

La présente invention porte sur un appareil de génération de plasma haute densité couplé par induction, lequel appareil grave de façon stable des surfaces de tranches en saphir utilisées pour produire des puces de diodes électroluminescentes de haute luminance. L'appareil comprend une chambre de réaction qui procure un espace pour générer un plasma ; un système d'antenne disposé au-dessus de la chambre de réaction pour induire des chambres électrique pour générer un plasma ; une plaque d'isolation diélectrique interposée entre la chambre de réaction et le système d'antenne ; et une pluralité d'aimants permanents disposés le long de la circonférence de la plaque d'isolation diélectrique. La pluralité d'aimants permanents sont disposés en séquence, de telle manière que l'un des pôles magnétiques de chaque aimant permanent est le même que l'un des pôles magnétiques de l'aimant permanant adjacent, et que l'autre des pôles magnétiques de chaque aimant permanent est opposé à l'autre des pôles magnétiques de l'aimant permanant adjacent. Le système d'antenne comprend une pluralité d'unités d'antenne disposées en différentes positions, et chaque antenne des unités d'antenne comprend une partie d'application d'énergie à laquelle une énergie à haute fréquence est appliquée, une partie de sortie de masse et un enroulement circulaire. La partie d'application d'énergie et la partie de sortie de masse sont agencées de façon à former une ouverture. L'appareil de génération de plasma haute densité décrit ci-dessus peut être utilisé de façon appréciable dans la formation de motifs de lentille sur des tranches en saphir, laquelle nécessite une gravure au plasma de haute densité étant donné que celle-ci produit des effets de gravure uniforme à l'aide d'un plasma stable.
PCT/KR2011/002974 2010-04-27 2011-04-25 Appareil de génération de plasma haute densité Ceased WO2011136512A2 (fr)

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KR20100039063 2010-04-27
KR10-2010-0039063 2010-04-27
KR10-2010-0125941 2010-12-10
KR1020100125941A KR101039232B1 (ko) 2010-04-27 2010-12-10 고밀도 플라즈마 발생장치

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CN110536530A (zh) * 2018-09-20 2019-12-03 北京北方华创微电子装备有限公司 磁增强法拉第屏蔽结构及感应耦合等离子体源
CN115497797A (zh) * 2022-05-27 2022-12-20 北京北方华创微电子装备有限公司 用于产生等离子体的线圈结构及半导体工艺设备

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JP6836976B2 (ja) * 2017-09-26 2021-03-03 東京エレクトロン株式会社 プラズマ処理装置

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TW508693B (en) * 1999-08-31 2002-11-01 Tokyo Electron Limted Plasma treating apparatus and plasma treating method
JP3310957B2 (ja) * 1999-08-31 2002-08-05 東京エレクトロン株式会社 プラズマ処理装置
US7067034B2 (en) * 2000-03-27 2006-06-27 Lam Research Corporation Method and apparatus for plasma forming inner magnetic bucket to control a volume of a plasma
KR100742659B1 (ko) * 2005-04-12 2007-07-25 한양대학교 산학협력단 자성코어를 이용한 유도결합 플라즈마 발생장치
KR100692420B1 (ko) * 2005-12-09 2007-03-13 주식회사 플라즈마트 유도결합형 플라즈마 발생장치의 안테나구조
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CN110536530A (zh) * 2018-09-20 2019-12-03 北京北方华创微电子装备有限公司 磁增强法拉第屏蔽结构及感应耦合等离子体源
CN115497797A (zh) * 2022-05-27 2022-12-20 北京北方华创微电子装备有限公司 用于产生等离子体的线圈结构及半导体工艺设备

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KR101039232B1 (ko) 2011-06-13
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TWI406336B (zh) 2013-08-21

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