WO2011129559A2 - Catalyst-reactive ionic toothbrush - Google Patents

Abstract

The present invention relates to a catalyst-reactive ionic toothbrush, and more particularly, to a catalyst ionic toothbrush capable of effectively improving the sanitary conditions of teeth and mouth by means of a redox reaction by exciting conduction electrons when heat, light, or DC current is applied to impurity semiconductors obtained from metal oxides which protrude from one side of a toothbrush handle and inserted into a communication hole of a brushing part. The present invention provides a catalytic ionic toothbrush including impurity semiconductors having a plurality of band gaps comprising different materials which can be responsive to a number of various conditions such as absolute zero temperature, finite temperature, outdoor temperature, indoor temperature, body temperature, in-mouth temperature, infrared light, visible light, ultraviolet rays, and DC power.

Description

 Name of the Invention

Catalytic ion toothbrush technology

TECHNICAL FIELD The present invention relates to a catalyst (1) semi-finished first brush, and more particularly, the first brush handle is longitudinally protruded from one side to be heated in an impurity semiconductor obtained from a metal oxide inserted into a tooth communication hole. When medium, light, or direct current power is mediated, conduction electrons are excited, effectively reducing dental and oral hygiene as a result of redox reaction. Catalytic reactions that can be improved are directed to on toothbrushes. Background

Conventional toothbrushes have been brushed by brushing nylon filaments in plastic. This brush doesn't matter how hard you wipe it, but there are still flaws left. Disclosure of the Invention

Toothbrushes are defined as "physical cleaning tools that remove debris from the tooth surface." Conventional ¾ brush has a limit to wipe out bacteria as a cleaning tool, such as nylon broom. Germs are efficient by sterilization and removal. An object of the present invention is to improve the limitations of the conventional first brush, plaque, deposited pigment, organic acid. It is an impurity semiconductor that can decompose alveolar dong and sterilize alveolar pylori and caries-causing bacteria to improve dental hygiene.Then, heat, light or DC power supply The present invention provides a catalyst reaction ion toothbrush in which electrons generated by the catalyst reaction are excited.

Alternative Site (Article 26) In order to achieve the object of the present invention, several kinds of n-type, p-type, and np-type impurity semiconductors obtained as metal oxides as catalyst reaction materials or metallic properties described in the periodic table are selected as materials. These materials have a band gap inherent in physical properties. In the present invention, at least one or more different powdery dissimilar materials may be mixed and formed by a known powder metallurgy as part of the catalyst reaction, or at least one or more solid phases may be mixed with each other. Multiple dissimilar materials can be combined with bolts and nuts to form a plurality of band gaps. As described above, the purpose of forming a plurality of band gaps is to use absolute conditions such as absolute intensity, finite temperature, room temperature, and various conditions such as infrared rays, visible rays, and ultraviolet rays. It is a method to exhibit an efficient catalytic reaction that is struck by. The difference between the types of the impurity semiconductors of n-type, p-type, and np-type (both properties) obtained from the metal oxide selected as the material and the inherent band gap of these properties is O.OeV to 3.8. It is configured within the range of eV and the details are shown in [Table 1].

TABLE 1

 No Impurity Semiconductor Chemical Formula Band gap Remarks

1 Potassium Tantalate KTa0 ₃ n 3.8 eV

2 Tin Oxide Sn0 ₂ n 3.6eV

 3 Zinc Emulsified ZnS n 3.5eV

 4 Potassium Nitride GaN n 3.4eV

 5 Zinc Oxide ZnO n 3.3 eV

6 Titanium Dioxide Ti0 ₂ n 3.2eV

 7 T Tanzium Strontium SrTiOs n 3.2eV

8 Tungsten Oxide W0 ₃ n 3.2eV

9 cerium oxide Ce0 ₂ n 3.1 eV

10 Titanium Dioxide Ti0 ₂ n 3.0 eV

11 Silicon Carbide SiC n 2.8eV No Impurity Semiconductor Chemical Formula Band gap Remarks

12 Oxide Tingsten W0 ₃ n 2.7 eV

13 Indium oxide Ι ^η 203 n 2.5 eV

 14 Emulsion Cadmium CdS n 2.4eV

 15 Potassium Phosphate GaP n.p 2.2eV Amphoteric

16 Zinc Telluride ZnTe n 2.2eV

 17 Iron Oxide Fe203 n 2.2eV

18 Copper Oxide I Cu ₂ 0 P 2.1eV

 19 Cadmium Selenium CdSe n 1.7eV

 20 potassium arsenide GaAs n 1.4 eV

 21 Copper Oxide II CuO P 1.4eV

 22 Photo rhythm InP n 1.3 eV

 23 silicon Si n-p l.leV amphoteric

24 Indium Nitride InN n 0.7eV

 25 Germanium Ge n 0.6eV

 26 Galena PbS n 0.3eV

 27 Lead Tellurium Π PbTe n 0.2eV

 28 Tin Sn n O.leV

 29 Conductive Metals Pt, Ag n O.OeV The metal oxides of the above Table 1 are obtained by a suitable method matching the physical properties of the material among the known techniques of (I) to (VH) below.

(I) Method for Press Molding and Sintering the Powder of Crystalline in Oxidizing Atmosphere

(Π) High-temperature firing of solid materials under oxidative conditions

 (ΠΙ) Method of electrolytic oxidation of materials to form oxidized compounds

 (IV) PVD (Physical Vapor Deposition) Method

 (V) Chemical Vapor Deposition (CVD) method

 (VI) Liquid Growth Method

(VH) coating method A significant amount of electronic energy is concentrated in semiconductors and metals. This energy band is called the valence band (價 電子 帶). In addition, the energy band larger than home appliances (가전 電子 帶) is called the conduction band (傳導 帶). The difference in energy between the consumer electronics and conduction bands is called the band gap energy. In absolute zero, the valence band of a semiconductor has only electrons and the conduction band is empty, but at a finite temperature and room temperature, the electrons of the valence band (e—) are band gaps due to thermal vibration energy. Pass through to reach the evangelism band. The electrons (e ^_ ) excited in the conduction band generate electric conduction because the activity is free. This heat-excited electron (e—) is called a thermally conductive electron. On the other hand, in the valence band, the blood (에) is formed in the place where the electrons (e—) are excited, and this blood (穴) is called a hole (正 孔: hole). The conduction electrons and holes (h ⁺ ) are called carriers. The higher the carrier concentration, the better the electrical conductivity, and the smaller the band gap, the higher the carrier concentration. Carrier concentration is the number of carriers per unit volume. The number of carriers and the band gap in the thermal equilibrium form the following formula [1] between the conduction electron concentration n and the hole concentration p.

ex (、~ ) [ 1 ] ^'

ex (、 ~) [1]

Ν is the density of the states that can be taken by electrons and holes (the density of the effective states), which is the same as the original volunteer density (10 ^23. Cm- ³ ). Is a Boltzmann integer. In impurity semiconductors, since n and p are almost the same, they are arranged as shown in the following [2]. ? ~ ¾Λ ^Γ exp {―-^ = ———— —

2 k Ύ J and more light energy than the intrinsic band gap of the impurity semiconductor is investigated, the electrons of the valence band are excited and reach the conduction band. (H ⁺ ) is generated in (. 電子 帶) For example, the band gap of silicon (Si), an np-type amphoteric impurity semiconductor according to [Table 1], 1. leV. By converting the wavelength of light using the formula of E (eV) = hi = hc / nm), leV is about 1.24 / zm, and light of this wavelength is a wavelength corresponding to infrared rays. Therefore, when light shorter than infrared light is irradiated, electrons (e ^" ) that are excited in the valence band (e ^" ) and reach the conduction band (e ^" ) are photoelectric electrons (light). The reaction equations based on thermal or light energy are summarized as follows.

When heat or light energy is added to the impurity semiconductor, electrons (e—) are excited in the valence band, and holes are generated. The reaction of the oxidized hydroxy radical (.OH) and superoxide (.0 ₂₎ is generated by the reduction reaction by the conduction electrons of the excited conduction band and the hole of the valence band and the oxidation reaction equation.

For reducing plate: 0 ₂ + e- ^■ > * 0 ^_ [3] banung oxide: Γ + h ⁺ > 20 [4] Active oxygen: 0 + e ^" > 0 ^" 5]

 0 一 + 02> Of [6]

H20 + h ⁺ > * 0H + H ⁺ —————— [7]

The amount of energy of radicals (radical: .OH) exhibiting strong oxidizing power generated by the reaction formulas of Formulas 3 to 7 is OC, CH, ON, C-0, 0-H among the molecules constituting the prag. As it is much larger than the amount of energy of NH, NH, etc., it inhibits and decomposes the bonds and decomposes plaque, pigment, organic acid, and lactic acid. Can kill. The magnitude difference between the amount of energy in the molecular structure constituting the plaque and the amount of energy of the hydroxy radical (H) is shown in Table 2 below. TABLE 2

본 발명에서 언급되는 열 (熱.溫度) 에너지란?실내온도, 실외온도， 체온 및 구강 내의 온도를 지칭하는 의미이고， 빛 (光) 에너지란? 적외선, 가시광선, 자외선 및 전구와 같은 인공 광 (光)을 포함하는 개념이다. 그리고 불순물반도체란? 금속산 화물로 획득된 n형, p형， np형 반도체 및 [표 1]에 기재한 재료의 일체를 총괄 적으로 의미하는 개념이다. 본 발명의 다른 실시 예로서 전기전도에 의한 불순물반도체 촉매반웅이온칫솔 이 제공된다. 전기전도에 의한 관계식을 정리하면 아래와 같다.

The term heat energy referred to in the present invention means indoor temperature, outdoor temperature, body temperature, and temperature in the oral cavity. What is light energy? It is a concept that includes artificial light such as infrared rays, visible rays, ultraviolet rays and light bulbs. What is impurity semiconductor? It is a concept that collectively means all of the n-type, p-type, and np-type semiconductors obtained from metal oxides and the materials shown in [Table 1]. In another embodiment of the present invention, an impurity semiconductor catalyst semi-finished toothbrush by electric conduction is provided. The relational expression by electric conduction is as follows.

When a direct current voltage is applied to the impurity semiconductor, an electric conduction occurs in which electrons move to the (+) side and holes move to the (-) side. If the electron density is ^, then in = ⁿ n ^eV n [8]

It is cleaned up. Where n r is the electron velocity. In addition, if the current density due to the hole is ^, the hole is the position where the electron is excited, so the magnitude of the charge is e as the electron, and since the sign is the opposite, + e is indicated. therefore

i _p = n _p ev _p [9]

It is cleaned up. Where ^ is the hole density and ^ is the hole velocity. Therefore, i by the movement of these electrons and holes is the opposite of the sign of the charge of the electrons and holes, so the current i is arranged as [10] below.

% —I _n + i _p = e (n _n v _n + n _p v _p ) [10]

In the case of free electrons, a proportional relation between the moving speed and the applied field strength is established. Therefore, if the hole mobility is μ _ρ , the relation below [11] is established.

Substituting this relation into Equation [10], it is as in Equation 12 below.

This equation is used to express the current density of electrons and holes. In addition, this expression is summarized in the following [13] when compared with the law of ohm.

σ = ε (η _η μ _η + η ^ ι _ρ ) [13]

The above equation is a formula representing the conductivity of electrons and holes due to electric conduction in the structure of a direct current circuit to an impurity semiconductor. In this configuration, the type of power source is not selected. Conventional toothbrush is a broom cleaning method that is a broom concept of nylon filament is a broom cleaning method, the catalytic ion toothbrush according to the present invention, while the conventional tooth brushing while brushing the chemistry by conduction electrons As a result, it decomposes plaque, deposited pigment, organic acid, and lactic acid, and at the same time, it effectively sterilizes alveolar pylori and streptococcus causal bacteria to effectively improve dental hygiene. Brief description of the drawings

1 is a conceptual diagram of the configuration of the catalytic reaction ion toothbrush according to the present invention.

2A, 1B, 1D, and 3D are conceptual views of the structure of the pure pure semiconductor. 3 is a conceptual view of the configuration of the catalytic reaction ion toothbrush by electric conduction. Best embodiment of the invention

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. 1 is a conceptual diagram of the configuration of the catalytic reaction ion toothbrush. An impurity semiconductor (4) formed of a fern (1) and a communicating portion (2) inserted into the oral cavity and coated on the fern, and protruding from the engaging portion (7) in the direction from the handle (3) to the fern (1) In which the heat or light can be mediated in the communication section 2 in the configuration in which the holes are inserted into the communication holes 5. The toothed part 1 which has 6: 6 is couple | bonded by the coupling part 7 of the handle 3, and the structure of a catalytic reaction ion toothbrush is completed. In this context, the imagination that the toothbrush and the handle are composed of separate bodies and can be attached and detached is naturally infiltrated.

When brushing with a catalytic reaction device having the above structure, the heat or light is transferred to the impurity semiconductor through the medium hole. By the reactions of Formulas 3 to 7, the plaque, the deposited pigment, the organic acid, the lactic acid and the like can be decomposed, and the alveolar pustules and the streptococcus bacteria can be sterilized to effectively improve the dental hygiene state. 2A, 2B, and 3D are conceptual views of the structure of the impurity semiconductor. 2A is an impurity semiconductor 10 which protrudes from the toothbrush handle toward the fern and is inserted into the communication hole to respond to heat or light and is solid in the present invention. It is obtained by calcining germanium (Ge: ll) at high temperature under oxidative conditions. The band gap of this material is 0.6 eV, which is good in response to heat or light. [B] of FIG. 2 is multifaceted by mixing at least one type of crystal powder of different dissimilar materials in the impurity semiconductor 20 protruding from the first brush handle toward the fern part. It is a conceptual diagram that can realize the response to heat or light even under the conditions.

Platinum (Pt: 21), potassium phosphide (GaP: 22) and zinc oxide (ZnO: 23) with different materials and band gaps are selected and configured by a known powder metallurgy method. This can be formed to improve the efficiency of the response to heat or light. [D] of FIG. 2 shows heterogeneous materials having at least one or more different band gaps in the impurity semiconductor 30 protruding from the first brush handle toward the fern part. After selecting and cutting into appropriate lengths, the socket nut 32 is formed on one side of the first kind material 31, the blunt 34 is formed on one side of the other first kind material 33, and the socket nut 35 on the other side. ), The bolt 37 is formed on one side of the first kind of material 36, and then the bolt 34 is coupled to the socket nut 32 and the bolt 37 is connected to the socket nut 35. By combining, a catalytic reaction agent toothbrush having an impurity semiconductor 30 having a plurality of different band gaps between dissimilar materials is provided. [D] of FIG. 2 is a conceptual diagram in which the first material 31 of [D], another first material 33, and another first material 36 are combined. In the present invention, tin (Sn: a 40) and another one material of silicon (Si: W is configured to select a 42): 41) and another one material as carbon dioxide tea (Ti0 _2. Tin is an n-type impurity semiconductor with a band gap of O.leV, silicon is an np-type amphoteric semiconductor with a band gap of 1. leV, titanium dioxide is an n-type impurity semiconductor with a band gap of 3.2 eV. This embodiment is a configuration in which a feature called coupling (joining) of an np type impurity semiconductor is also added. 3 is a conceptual diagram of the configuration of the catalytic reaction ion toothbrush by electric conduction. Photovoltaic cells 51 and 51a mounted on one side of the handle 50 and the other side are electrically connected in series or in parallel to connect the positive and negative poles to the coupling portion 52 of the handle 50. ) Selects germanium (Ge: 53a) as the first kind of material, copper oxide (CusO: 53b) as the second kind of material, and tin oxide (Sn0 ₂ : 53c) as the third kind of material. By connecting to one side 54 and the other side 55 of the impurity semiconductor 53 to be bonded (bonded), a voltage by a direct current circuit is applied to the impurity semiconductor. In the present invention, as a power source, regardless of a general battery and a photovoltaic cell. When electromotive force by photovoltaic cells is applied to the impurity semiconductors 53, 53a, 53b, 53c, the semi-formula of the formulas [8] to [13] and the formulas [1] to [ By the reaction of the conduction electrons, which form a large number of band gaps and respond to heat, light, and direct current voltage constantly under a plurality of conditions. Filial piety It can also improve oral and dental hygiene.

The technical idea according to the present invention is not limited to each embodiment, and at least one or more different materials are selected from the elements described in the Periodic Table of the Elements as a means for implementing a more efficient catalytic reaction iontoothbrush, etc. It can also be configured in various ways.

Industrial availability

Each member of the 'catalyst banung ion toothbrush, according to the present invention, such as electricity (前記) from the start of the ^Γ invention "as described hanba in detail in" The best embodiment of the invention "is to be sourced from each technical field of a modern industrial society Configuration is possible.

Claims

Claim 1. Impurity semiconductors composed of metal oxides inserted into the communication section and protruding from the coupling section include KTaOs, Sn0 ₂ , ZnS, GaN, ZnO, Ti0 ₂ , SrTiOs, W0 ₃ , Ce0 ₂ , SiC, W0 ₃ , ln ₂ 0 _{1 L 3d} CdS, GaP, ZnTe, Fe ₂ 0 ₃ , Cu ₂ 0, CdSe, GaAs, CuO, InP, Si, InN, Ge, PbS, PbTe, Sn, Pt, Ag Multiple band gaps selected from more than one type and formed within the range of O.OeV or 3.8 eV by mutual matching and bonding (joining) are used for heat, light, DC voltage ( Cationic ionized toothbrush, characterized in that it is always answered to a plurality of conditions of the direct flow densities 2. The impurity semiconductors according to claim 1 are formed by crystalline powder metallurgy or are composed of solid nuts and bolts. ) Is a catalyst reaction iontoothbrush, characterized in that the at least one type is mixed and bonded (bonded) 3. The catalytic reaction agent toothbrush of claim 1, wherein the fern having a plurality of medial holes in the communication part is composed of a handle and a separate body, and is assembled and detachable. 4. The positive electrode and the negative electrode of the cell or photovoltaic cell of claim 1, which are mounted in series or parallel connection on one side and the other side of the handle, respectively, on one side of the impurity semiconductor 53 (54). ) Is connected to the other side 55 and the direct current circuit is constituted, and the voltage by the direct current circuit is applied to the impurity semiconductors 53a, 53b, 53c composed of different dissimilar materials. Catalyst reaction brush