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WO2011118600A1 - Procédé de fabrication d'un ensemble tranche à semi-conducteur, ensemble tranche à semi-conducteur, et dispositif à semi-conducteur - Google Patents

Procédé de fabrication d'un ensemble tranche à semi-conducteur, ensemble tranche à semi-conducteur, et dispositif à semi-conducteur Download PDF

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Publication number
WO2011118600A1
WO2011118600A1 PCT/JP2011/056877 JP2011056877W WO2011118600A1 WO 2011118600 A1 WO2011118600 A1 WO 2011118600A1 JP 2011056877 W JP2011056877 W JP 2011056877W WO 2011118600 A1 WO2011118600 A1 WO 2011118600A1
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WIPO (PCT)
Prior art keywords
semiconductor wafer
spacer
transparent substrate
wall portion
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/056877
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English (en)
Japanese (ja)
Inventor
裕久 出島
川田　政和
正洋 米山
高橋　豊誠
白石　史広
敏寛 佐藤
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Sumitomo Bakelite Co Ltd
Original Assignee
Sumitomo Bakelite Co Ltd
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Priority to CN2011800133493A priority Critical patent/CN102792440A/zh
Priority to KR1020127026118A priority patent/KR20130018260A/ko
Publication of WO2011118600A1 publication Critical patent/WO2011118600A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a method for manufacturing a semiconductor wafer bonded body, a semiconductor wafer bonded body, and a semiconductor device.
  • a semiconductor device typified by a light receiving device such as a CMOS image sensor or a CCD image sensor
  • a semiconductor substrate provided with a light receiving portion and a light receiving portion side with respect to the semiconductor substrate are formed so as to surround the light receiving portion.
  • a transparent substrate bonded to a semiconductor substrate through the spacer see, for example, Patent Document 1.
  • a method for manufacturing a semiconductor device includes a step of attaching a photosensitive adhesive film (spacer forming layer) to a semiconductor wafer provided with a plurality of light receiving portions, and a mask for the adhesive film.
  • the uncured portion of the adhesive film is dissolved and removed with a developer. At that time, the uncured portion may not be completely dissolved in the developer, and a part of the uncured portion may become a solid suspended matter.
  • the cured portion (spacer) of the adhesive film is cleaned with a cleaning liquid before the semiconductor wafer and the transparent substrate are bonded via the spacer. Still, this was a problem.
  • An object of the present invention is to suppress or prevent the solid floating matter generated in the development process from remaining as a residue when the spacer provided between the semiconductor wafer and the transparent substrate is formed through the exposure process and the development process.
  • An object of the present invention is to provide a method of manufacturing a semiconductor wafer bonded body that can be manufactured, and to provide a semiconductor wafer bonded body and a semiconductor device excellent in reliability.
  • a method for producing a semiconductor wafer assembly comprising a spacer having Forming a spacer forming layer composed of a photosensitive resin composition on one of the semiconductor wafer and the transparent substrate; Exposing the spacer forming layer by selectively irradiating exposure light, and developing with a developer to leave the wall portion; and Bonding the other of the semiconductor wafer and the transparent substrate to the wall,
  • W [ ⁇ m] the width of the wall portion
  • H [ ⁇ m] the height of the wall portion
  • the developer is applied to the spacer forming layer while rotating the semiconductor wafer or the transparent substrate on which the spacer forming layer is formed around an axis line perpendicular to the plate surface and passing through the center.
  • the wall portion and the wall portion are formed while the semiconductor wafer or the transparent substrate on which the wall portion is formed is rotated around an axis line perpendicular to the plate surface and passing through the center.
  • the step of removing the cleaning liquid is performed by rotating the semiconductor wafer or the transparent substrate on which the wall portion is formed around an axis that is perpendicular to the plate surface and passes near the center.
  • FIG. 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention.
  • FIG. 2 is a longitudinal sectional view showing a semiconductor wafer bonded body according to an embodiment of the present invention.
  • FIG. 3 is a plan view showing the bonded semiconductor wafer shown in FIG. 4 is a process diagram showing an example of a method for manufacturing the semiconductor device shown in FIG. 1 (the semiconductor wafer bonded body shown in FIG. 2).
  • FIG. 5 is a process diagram showing an example of a method for manufacturing the semiconductor device shown in FIG. 1 (the semiconductor wafer bonded body shown in FIG. 2).
  • 6 is a process diagram showing an example of a method for manufacturing the semiconductor device shown in FIG. 1 (the semiconductor wafer bonded body shown in FIG. 2).
  • FIG. 7 is a diagram for explaining the development processing shown in FIG.
  • FIG. 8 is a diagram for explaining the operation in the development processing shown in FIG.
  • FIG. 1 is a cross-sectional view showing a semiconductor device according to an embodiment of the present invention.
  • the upper side in FIG. 1 is referred to as “upper” and the lower side is referred to as “lower”.
  • the semiconductor device 100 shown in FIG. 1 is a light receiving device such as a CMOS image sensor or a CCD image sensor.
  • such a semiconductor device (light receiving device) 100 is provided on a base substrate 101, a transparent substrate 102 disposed so as to face the base substrate 101, and a surface of the base substrate 101 on the transparent substrate 102 side.
  • the individual circuit 103 including the received light receiving portion, the spacer 104 provided between the transparent substrate 102 and the individual circuit 103, and the solder bump 106 provided on the surface of the base substrate 101 opposite to the individual circuit 103. And have.
  • the semiconductor device 100 is obtained by separating a semiconductor wafer bonded body 1000 of the present invention described later.
  • the base substrate 101 is a semiconductor substrate and is provided with a circuit (not shown) (an individual circuit included in a semiconductor wafer described later).
  • the individual circuit 103 is provided over almost the entire surface.
  • the individual circuit 103 includes a light receiving portion, and has, for example, a configuration in which a light receiving element and a microlens array are stacked in this order on the base substrate 101.
  • Examples of the light receiving element included in the individual circuit 103 include a charge coupled device (CCD), a complementary metal oxide semiconductor (CMOS), and the like.
  • the individual circuit 103 including such a light receiving element converts the light received by the individual circuit 103 into an electrical signal.
  • the transparent substrate 102 is disposed so as to face one surface (upper surface) of the base substrate 101, and has substantially the same planar dimension as the planar dimension of the base substrate 101.
  • Examples of the transparent substrate 102 include an acrylic resin substrate, a polyethylene terephthalate resin (PET) substrate, and a glass substrate.
  • PET polyethylene terephthalate resin
  • the spacer 104 is directly bonded to the individual circuit 103 and the transparent substrate 102, respectively. Thereby, the base substrate 101 and the transparent substrate 102 are bonded via the spacer 104.
  • the spacer 104 has a frame shape so as to follow the outer peripheral edge portions of the individual circuit 103 and the transparent substrate 102. As a result, a gap 105 is formed between the individual circuit 103 and the transparent substrate 102.
  • the spacer 104 is provided so as to surround the center of the individual circuit 103, but the part surrounded by the spacer 104 in the individual circuit 103, that is, the part exposed to the gap 105 is substantially individual. Functions as a circuit.
  • the solder bump 106 has conductivity, and is electrically connected to the wiring provided on the base substrate 101 on the lower surface of the base substrate 101. As a result, an electrical signal converted from light by the individual circuit 103 is transmitted to the solder bump 106.
  • FIG. 2 is a longitudinal sectional view showing a semiconductor wafer bonded body according to an embodiment of the present invention
  • FIG. 3 is a plan view showing the semiconductor wafer bonded body shown in FIG.
  • the semiconductor wafer bonded body 1000 is composed of a laminated body in which a semiconductor wafer 101 ', a spacer 12A, and a transparent substrate 102' are sequentially laminated. That is, in the semiconductor wafer bonded body 1000, the semiconductor wafer 101 'and the transparent substrate 102' are bonded via the spacer 12A.
  • the semiconductor wafer 101 ′ is a substrate that becomes the base substrate 101 of the semiconductor device 100 as described above by performing an individualization process as described later.
  • the semiconductor wafer 101 ′ is provided with a plurality of individual circuits (not shown).
  • the individual circuit 103 as described above is formed corresponding to each individual circuit.
  • the spacer 12 ⁇ / b> A is a member that becomes the spacer 104 of the semiconductor device 100 as described above by going through an individualization process as described later.
  • the spacer 12A has a wall portion 104 'provided so as to define a plurality of gaps 105 between the semiconductor wafer 101' and the transparent substrate 102 '.
  • the wall 104 ' has a shape that combines a plurality of ridges.
  • the wall portion 104 ′ is formed so that the plurality of gap portions 105 each have a quadrangular shape and are arranged in a matrix in a plan view.
  • the plurality of gaps 105 correspond to the plurality of individual circuits (individual circuits 103) on the semiconductor wafer 101 ′ described above, and the wall 104 ′ corresponds to each individual circuit on the semiconductor wafer 101 ′. It is formed so as to surround the circuit (individual circuit 103).
  • the spacer 12A has the following ⁇ 1> to ⁇ 1> when the width of the wall 104 ′ (projection) is W [ ⁇ m] and the height of the wall 104 ′ (projection) is H [ ⁇ m]. 3> is satisfied.
  • the transparent substrate 102 ' is bonded to the semiconductor wafer 101' via the spacer 12A.
  • the transparent substrate 102 ′ is a member that becomes the transparent substrate 102 of the semiconductor device 100 as described above by performing an individualization process as described later.
  • a plurality of semiconductor devices 100 can be obtained by dividing such a semiconductor wafer bonded body 1000 into individual pieces as will be described later.
  • FIG. 4 to 6 are process diagrams showing an example of a manufacturing method of the semiconductor device shown in FIG. 1 (the semiconductor wafer bonded body shown in FIG. 2), and FIG. 7 explains the development processing shown in FIG. 5A.
  • FIG. 8 is a diagram for explaining the operation in the development processing shown in FIG.
  • the manufacturing method of the semiconductor device 100 includes [A] a process of manufacturing the semiconductor wafer bonded body 1000 and [B] a process of separating the semiconductor wafer bonded body 1000 into pieces.
  • the manufacturing method of the semiconductor wafer bonded body 1000 includes ⁇ A1 >> a step of attaching the spacer formation layer 12 on the semiconductor wafer 101 ′, and ⁇ A2 >> exposure and development of the spacer formation layer 12 Forming the spacer 12A by selectively removing the transparent substrate 102 ′ on the surface of the spacer 12A opposite to the semiconductor wafer 101 ′, and “A4” of the semiconductor wafer 101 ′. And a step of performing predetermined processing or processing on the lower surface.
  • A1-1 First, as shown in FIG. 4A, a spacer forming film 1 is prepared.
  • the spacer forming film 1 has a supporting base 11 and a spacer forming layer 12 supported on the supporting base 11.
  • the support substrate 11 has a sheet shape and has a function of supporting the spacer forming layer 12.
  • This support base material 11 has optical transparency. Thereby, it is possible to irradiate the spacer forming layer 12 with exposure light through the support base material 11 while the support base material 11 is attached to the spacer forming layer 12 in the exposure process in the step ⁇ A2 >> described later.
  • the constituent material of the support base 11 is not particularly limited as long as it has the function of supporting the spacer forming layer 12 and the light transmittance as described above.
  • polyethylene terephthalate (PET), polypropylene (PP), polyethylene (PE), etc. are mentioned.
  • PET polyethylene terephthalate
  • PET polyethylene terephthalate
  • PET is used as the constituent material of the support substrate 11 because it can make the balance between the light transmittance and the breaking strength of the support substrate 11 excellent. preferable.
  • Such an average thickness of the support base 11 is preferably 5 to 100 ⁇ m, and more preferably 15 to 50 ⁇ m. Thereby, the handleability of the film for forming a spacer can be improved, and the thickness of the portion of the spacer forming layer that is in contact with the supporting substrate can be made uniform.
  • the support substrate 11 cannot exhibit the function of supporting the spacer forming layer 12.
  • the handleability of the spacer forming film 1 is lowered.
  • the transmittance of the exposure light in the thickness direction of the support substrate 11 is not particularly limited, but is preferably 20% or more and 100% or less, and more preferably 40% or more and 100% or less. Thereby, in the exposure process mentioned later, exposure light can be reliably performed by irradiating exposure light to the spacer formation layer 12 via the support base material 11.
  • the spacer forming layer 12 has adhesiveness to the surface of the semiconductor wafer 101 '. Thereby, the spacer forming layer 12 and the semiconductor wafer 101 ′ can be bonded (bonded).
  • the spacer forming layer 12 has photocurability (photosensitivity).
  • the spacer 12A can be formed by patterning so as to have a desired shape by an exposure process and a development process in a process ⁇ A2 >> described later.
  • the spacer forming layer 12 has thermosetting properties. Thereby, the spacer formation layer 12 has adhesiveness by thermosetting even after performing the exposure process in process ⁇ A2 >> mentioned later. Therefore, in the step ⁇ A3 >> described later, the spacer 12A and the transparent substrate 102 'can be bonded by thermosetting.
  • Such a spacer forming layer 12 is not particularly limited as long as it has adhesiveness, photocurability, and thermosetting properties as described above, but an alkali-soluble resin, a thermosetting resin, and a photopolymerization initiator are used. It is preferably composed of a material (hereinafter referred to as “resin composition”).
  • alkali-soluble resin examples include novolak resins such as cresol type, phenol type, bisphenol A type, bisphenol F type, catechol type, resorcinol type, pyrogallol type, phenol aralkyl resin, hydroxystyrene resin, methacrylic acid resin, and methacrylic acid ester.
  • novolak resins such as cresol type, phenol type, bisphenol A type, bisphenol F type, catechol type, resorcinol type, pyrogallol type, phenol aralkyl resin, hydroxystyrene resin, methacrylic acid resin, and methacrylic acid ester.
  • Acrylic resins such as resins, cyclic olefin resins containing hydroxyl groups and carboxyl groups, polyamide resins (specifically, having at least one of a polybenzoxazole structure and a polyimide structure and having hydroxyl groups in the main chain or side chain Resin having a carboxyl group, an ether group or an ester group, a resin having a polybenzoxazole precursor structure, a resin having a polyimide precursor structure, a resin having a polyamic acid ester structure, and the like. It can be used singly or in combination of two or more.
  • the spacer forming layer 12 configured to include such an alkali-soluble resin has an alkali developability with less environmental load.
  • alkali-soluble resins described above those having both an alkali-soluble group contributing to alkali development and a double bond are preferably used.
  • alkali-soluble group examples include a hydroxyl group and a carboxyl group.
  • the alkali-soluble group can contribute to alkali development and can also contribute to a thermosetting reaction.
  • alkali-soluble resin can contribute to photocuring reaction by having a double bond.
  • Examples of such a resin having an alkali-soluble group and a double bond include a curable resin that can be cured by both light and heat, and specifically, for example, an acryloyl group, a methacryloyl group, and a vinyl. And a thermosetting resin having a photoreactive group such as a group, and a photocurable resin having a thermoreactive group such as a phenolic hydroxyl group, an alcoholic hydroxyl group, a carboxyl group, and an acid anhydride group.
  • the compatibility between the photocurable resin and the thermosetting resin described later can be improved.
  • the strength of the spacer forming layer 12 after curing, that is, the spacer 12A can be increased.
  • the photocurable resin having a thermally reactive group may further have another thermally reactive group such as an epoxy group, an amino group, or a cyanate group.
  • the photocurable resin having such a structure include (meth) acryl-modified phenolic resins, (meth) acryloyl group-containing acrylic acid polymers, carboxyl group-containing (epoxy) acrylates, and the like.
  • a thermoplastic resin such as a carboxyl group-containing acrylic resin may be used.
  • the resins having an alkali-soluble group and a double bond as described above it is preferable to use a (meth) acryl-modified phenol resin.
  • a (meth) acrylic modified phenolic resin it contains an alkali-soluble group. Therefore, when an unreacted resin is removed by a development process, instead of an organic solvent that is usually used as a developer, the load on the environment is reduced. Less alkaline solution can be applied.
  • the double bond contributes to the curing reaction, and as a result, the heat resistance of the resin composition can be improved.
  • the (meth) acryl-modified phenol resin is preferably used from the viewpoint that the warpage of the semiconductor wafer bonded body 1000 can be reliably reduced by using the (meth) acryl-modified phenol resin.
  • the (meth) acryl-modified phenol resin for example, a (meth) acryloyl-modified bisphenol resin obtained by reacting a hydroxyl group of a bisphenol with an epoxy group of a compound having an epoxy group and a (meth) acryloyl group is used. Can be mentioned.
  • examples of such a (meth) acryloyl-modified bisphenol resin include those shown in Chemical Formula 1 below.
  • a resin having an alkali-soluble group and a double bond in the molecular chain of a (meth) acryloyl-modified epoxy resin in which a (meth) acryloyl group is introduced at both ends of the epoxy resin,
  • a compound in which a dibasic acid is introduced by bonding a hydroxyl group in the molecular chain of the (meth) acryloyl-modified epoxy resin and one carboxyl group in the dibasic acid by an ester bond in addition, an epoxy in this compound
  • the repeating unit of the resin is 1 or more, and the number of dibasic acids introduced into the molecular chain is 1 or more.
  • such a compound for example, first, by reacting an epoxy group at both ends of an epoxy resin obtained by polymerizing epichlorohydrin and a polyhydric alcohol and (meth) acrylic acid, at both ends of the epoxy resin.
  • an epoxy resin obtained by polymerizing epichlorohydrin and a polyhydric alcohol and (meth) acrylic acid at both ends of the epoxy resin.
  • a (meth) acryloyl-modified epoxy resin having a (meth) acryloyl group introduced By obtaining a (meth) acryloyl-modified epoxy resin having a (meth) acryloyl group introduced, and then reacting the hydroxyl group in the molecular chain of the obtained (meth) acryloyl-modified epoxy resin with an anhydride of a dibasic acid It is obtained by forming an ester bond with one carboxyl group of this dibasic acid.
  • the modification rate (substitution rate) of the photoreactive group is not particularly limited, but 20% of the total reactive groups of the resin having an alkali-soluble group and a double bond. It is preferably about 80%, more preferably about 30-70%. By setting the modification amount of the photoreactive group within the above range, a resin composition having particularly excellent resolution can be provided.
  • the modification rate (substitution rate) of the thermally reactive group is not particularly limited, but is 20 to 20% of the total reactive group of the resin having an alkali-soluble group and a double bond. It is preferably about 80%, more preferably about 30 to 70%.
  • the weight average molecular weight of the resin is not particularly limited, but is preferably 30000 or less, more preferably about 5000 to 150,000. preferable. When the weight average molecular weight is within the above range, the film formability when the spacer forming layer 12 is formed on the support substrate 11 is particularly excellent.
  • the weight average molecular weight of the alkali-soluble resin is, for example, G.P. P. C.
  • the weight average molecular weight can be calculated from a calibration curve prepared in advance using a styrene standard substance. At that time, tetrahydrofuran (THF) is used as a measurement solvent, and measurement is performed at a temperature of 40 ° C.
  • THF tetrahydrofuran
  • the content of the alkali-soluble resin in the resin composition is not particularly limited, but it is preferably about 15 to 50 wt%, more preferably about 20 to 40 wt% with respect to the entire resin composition. . Further, when the resin composition contains a filler described later, the content of the alkali-soluble resin is about 10 to 80 wt% with respect to the resin components of the resin composition (all components except the filler). It is preferably about 15 to 70 wt%.
  • the blending balance of the alkali-soluble resin and the thermosetting resin described later in the spacer forming layer 12 can be optimized. Therefore, while making the resolution and developability of the patterning of the spacer forming layer 12 excellent in the exposure process and the developing process in the process ⁇ A2 >> described later, the adhesion of the spacer forming layer 12, that is, the spacer 12A is improved. It can be good.
  • the content of the alkali-soluble resin is less than the lower limit, there is an effect of improving the compatibility with other components (for example, a photocurable resin described later) in the resin composition using the alkali-soluble resin. May decrease.
  • the content of the alkali-soluble resin exceeds the upper limit, the developability or the resolution of the patterning of the spacer 12A formed by the photolithography technique may be deteriorated.
  • thermosetting resin examples include phenol novolak resins, cresol novolak resins, novolac type phenol resins such as bisphenol A novolak resin, phenol resins such as resol phenol resin, bisphenol type epoxy such as bisphenol A epoxy resin and bisphenol F epoxy resin.
  • novolak epoxy resin novolak epoxy resin, cresol novolak epoxy resin, etc., novolak epoxy resin, biphenyl type epoxy resin, stilbene type epoxy resin, triphenolmethane type epoxy resin, alkyl-modified triphenolmethane type epoxy resin, triazine nucleus-containing epoxy resin, di Epoxy resins such as cyclopentadiene-modified phenolic epoxy resins, urea (urea) resins, resins having a triazine ring such as melamine resins, unsaturated polymers Examples include ester resins, bismaleimide resins, polyurethane resins, diallyl phthalate resins, silicone resins, resins having a benzoxazine ring, cyanate ester resins, epoxy-modified siloxanes, and the like. Can do.
  • the spacer forming layer 12 including such a thermosetting resin exhibits adhesiveness even after being exposed to light and developed.
  • the transparent substrate 102 can be thermocompression bonded to the spacer forming layer 12 (spacer 12A).
  • thermosetting resin when a curable resin that can be cured by heat is used as the aforementioned alkali-soluble resin, a resin different from this resin is selected.
  • thermosetting resins it is particularly preferable to use an epoxy resin. Thereby, the heat resistance of the spacer forming layer 12 (spacer 12A) after curing and the adhesion to the transparent substrate 102 can be further improved.
  • the epoxy resin when used as the thermosetting resin, includes an epoxy resin that is solid at room temperature (particularly bisphenol type epoxy resin) and an epoxy resin that is liquid at room temperature (particularly a silicone-modified epoxy resin that is liquid at room temperature). It is preferable to use together. Thereby, it is possible to obtain the spacer forming layer 12 that is excellent in both flexibility and resolution while maintaining excellent heat resistance.
  • the content of the thermosetting resin in the resin composition is not particularly limited, but is preferably about 10 to 40 wt%, more preferably about 15 to 35 wt% with respect to the entire resin composition. If the content of the thermosetting resin is less than the lower limit, the effect of improving the heat resistance of the spacer forming layer 12 by the thermosetting resin may be reduced. On the other hand, if the content of the thermosetting resin exceeds the upper limit, the effect of improving the toughness of the spacer forming layer 12 by the thermosetting resin may be reduced.
  • thermosetting resin when used as the thermosetting resin, it is preferable that the thermosetting resin further contains a phenol novolac resin in addition to the epoxy resin.
  • a phenol novolac resin By adding a phenol novolac resin to the epoxy resin, the developability of the resulting spacer forming layer 12 can be improved.
  • thermosetting property of the epoxy resin is further improved, and the strength of the spacer 104 to be formed is further improved.
  • Photopolymerization initiator examples include benzophenone, acetophenone, benzoin, benzoin isobutyl ether, methyl benzoin benzoate, benzoin benzoic acid, benzoin methyl ether, benzylfinyl sulfide, benzyl, dibenzyl, diacetyl, benzyldimethyl ketal, and the like. .
  • the spacer forming layer 12 including such a photopolymerization initiator can be more efficiently patterned by photopolymerization.
  • the content of the photopolymerization initiator in the resin composition is not particularly limited, but is preferably about 0.5 to 5 wt%, and about 0.8 to 3.0 wt% with respect to the entire resin composition. It is more preferable that If the content of the photopolymerization initiator is less than the lower limit, the effect of initiating the photopolymerization of the spacer forming layer 12 may not be sufficiently obtained. On the other hand, when the content of the photopolymerization initiator exceeds the upper limit, the reactivity of the spacer forming layer 12 is increased, and the storage stability and resolution may be deteriorated.
  • the resin composition constituting the spacer forming layer 12 preferably contains a photopolymerizable resin in addition to the above components. Thereby, the patternability of the spacer formation layer 12 obtained can be improved more.
  • this photopolymerizable resin when a curable resin curable with light is used as the alkali-soluble resin described above, a resin different from this resin is selected.
  • the photopolymerizable resin is not particularly limited.
  • an unsaturated polyester an acrylic compound such as an acrylic monomer or oligomer having at least one acryloyl group or methacryloyl group in one molecule, or a vinyl type such as styrene.
  • acrylic compound such as an acrylic monomer or oligomer having at least one acryloyl group or methacryloyl group in one molecule
  • vinyl type such as styrene.
  • examples thereof include compounds, and these can be used alone or in combination of two or more.
  • an ultraviolet curable resin mainly composed of an acrylic compound is preferable.
  • Acrylic compounds have a high curing rate when irradiated with light, and thus can pattern a resin with a relatively small amount of exposure.
  • acrylic compound examples include monomers of acrylic acid ester or methacrylic acid ester, and specifically include ethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, glycerin di (meth) acrylate.
  • the spacer 104 obtained from the spacer formation layer 12 can exhibit excellent strength.
  • the semiconductor device 100 including the spacer 104 is more excellent in shape retention.
  • the acrylic polyfunctional monomer means a monomer of (meth) acrylic acid ester having a tri- or higher functional acryloyl group or methacryloyl group.
  • acrylic polyfunctional monomers it is particularly preferable to use trifunctional (meth) acrylate or tetrafunctional (meth) acrylate. Thereby, the effect becomes more remarkable.
  • an acrylic polyfunctional monomer as the photopolymerizable resin
  • an acrylic polyfunctional monomer and epoxy vinyl ester resin carry out radical polymerization, the intensity
  • the solubility with respect to the alkali developing solution of the part which is not exposed of the spacer formation layer 12 can be improved at the time of image development, the residue after image development can be reduced.
  • Epoxy vinyl ester resins include 2-hydroxy-3-phenoxypropyl acrylate, Epolite 40E methacrylic adduct, Epolite 70P acrylic acid adduct, Epolite 200P acrylic acid adduct, Epolite 80MF acrylic acid adduct, Epolite 3002 methacrylic acid adduct.
  • the content of the acrylic polyfunctional polymer in the resin composition is not particularly limited, but is about 1 to 50 wt% in the entire resin composition. It is preferably about 5% to 25% by weight.
  • the photopolymerizable resin contains an epoxy vinyl ester resin in addition to the acrylic polyfunctional polymer
  • the content of the epoxy vinyl ester resin is not particularly limited, but is 3 to 30 wt% with respect to the entire resin composition. %, Preferably about 5% to 15 wt%.
  • the photopolymerizable resin as described above is preferably liquid at normal temperature.
  • the curing reactivity by the light irradiation (for example, ultraviolet irradiation) of the spacer formation layer 12 can be improved more.
  • work with the optical slave constituent resin and other compounding components (for example, alkali-soluble resin) in a resin composition can be made easy.
  • the photopolymerizable resin that is liquid at normal temperature include, for example, an ultraviolet curable resin mainly composed of the acrylic compound described above.
  • the weight average molecular weight of the photopolymerizable resin is not particularly limited, but is preferably 5,000 or less, and more preferably about 150 to 3,000. When the weight average molecular weight is within the above range, the sensitivity of the spacer forming layer 12 is particularly excellent. Furthermore, the resolution of the spacer formation layer 12 is also excellent.
  • the weight average molecular weight of the photopolymerizable resin is, for example, G.P. P. C. And can be calculated using the same method as described above.
  • the resin composition constituting the spacer forming layer 12 may contain an inorganic filler. Thereby, the strength of the spacer 104 formed by the spacer forming layer 12 can be further improved.
  • the content of the inorganic filler in the resin composition is preferably 60 wt% or less, more preferably 40 wt% or less, and more preferably 0 wt% or less (substantially) with respect to the entire resin composition. In particular).
  • the strength of the spacer 12A formed by the spacer forming layer 12 can be sufficiently improved by adding the acrylic polyfunctional monomer.
  • the addition of an inorganic filler into the resin composition can be omitted.
  • inorganic fillers include fibrous fillers such as alumina fibers and glass fibers, potassium titanate, wollastonite, aluminum borate, acicular magnesium hydroxide, acicular fillers such as whiskers, talc, and mica. , Sericite, glass flakes, flake graphite, platy fillers such as platy calcium carbonate, spherical fillers such as calcium carbonate, silica, fused silica, calcined clay, unfired clay, zeolite, silica gel And the like, and the like. These may be used alone or in combination. Among these, it is particularly preferable to use a porous filler.
  • the average particle size of the inorganic filler is not particularly limited, but is preferably about 0.01 to 90 ⁇ m, and more preferably about 0.1 to 40 ⁇ m.
  • the average particle diameter exceeds the upper limit, there is a risk that the appearance of the spacer forming layer 12 may be abnormal or the resolution may be poor. Further, if the average particle diameter is less than the lower limit value, there is a risk of poor adhesion when the spacer 104 is heated and pasted to the transparent substrate 102.
  • the average particle size can be evaluated using, for example, a laser diffraction particle size distribution analyzer SALD-7000 (manufactured by Shimadzu Corporation).
  • the average pore diameter of the porous filler is preferably about 0.1 to 5 nm, and more preferably about 0.3 to 1 nm.
  • the resin composition constituting the spacer forming layer 12 can contain additives such as a plastic resin, a leveling agent, an antifoaming agent, and a coupling agent within the range not impairing the object of the present invention in addition to the above-described components. .
  • the visible light transmittance of the spacer forming layer 12 can be made more suitable, and exposure defects in the exposure process can be more effectively prevented. can do. As a result, the semiconductor device 100 with higher reliability can be provided.
  • the average thickness (thickness after pasting) of the spacer forming layer 12 is not particularly limited, but is preferably 3 to 300 ⁇ m. Thereby, the spacer 104 forms the gap 105 having a necessary size, and in the exposure process described later, the exposure light is irradiated to the spacer forming layer 12 through the support base material 11 and the exposure process is reliably performed. Can do.
  • the gap portion 105 having a size required for the spacer 104 cannot be formed.
  • the average thickness of the spacer forming layer 12 exceeds the upper limit, it is difficult to form the spacer 104 having a uniform thickness. Further, in the exposure process described later, it is difficult to reliably perform exposure processing by irradiating the spacer forming layer 12 with exposure light through the support base 11.
  • the transmittance of exposure light in the thickness direction of the spacer forming layer 12 is not particularly limited, but is preferably 0.1 or more and 0.9 or less. Thereby, in the exposure process mentioned later, exposure light can be reliably performed by irradiating exposure light to the spacer formation layer 12 via the support base material 11.
  • the transmittance of exposure light in the thickness direction of the support substrate 11 and the spacer formation layer 12 is the peak wavelength of exposure light in the thickness direction of the support substrate 11 and the spacer formation layer 12. It refers to the transmittance (for example, 365 nm).
  • the light transmittance in the thickness direction of the support base 11 and the spacer forming layer 12 can be measured using, for example, a transmittance measuring device (manufactured by Shimadzu Corporation, UV-160A). .
  • the average thickness of the spacer forming film 1 is not particularly limited, but is preferably 8 to 400 ⁇ m. On the other hand, when the average thickness is less than 10 ⁇ m, the support base material 11 cannot exhibit the function of supporting the spacer forming layer 12, or the spacer 104 forms a gap 105 having a necessary size. I can't do it. On the other hand, when the average thickness exceeds 400 ⁇ m, the handleability of the spacer forming film 1 is lowered.
  • a plurality of individual circuits 103 are formed on one surface of the semiconductor wafer 101 ′. Specifically, a plurality of light receiving elements and a plurality of microlens arrays are stacked in this order on one surface of the semiconductor wafer 101 ′.
  • the spacer formation layer 12 of the film 1 for spacer formation is affixed on the said one surface side of semiconductor wafer 101 '(lamination process).
  • ⁇ A2 Step of selectively removing the spacer forming layer 12 to form the spacer 12A A2-1
  • the spacer forming layer 12 is irradiated with exposure light (ultraviolet rays) to perform exposure processing (exposure process).
  • the spacer forming layer 12 is irradiated with exposure light through a mask 20 including a light transmission portion 201 having a plan view shape corresponding to the plan view shape of the spacer 104.
  • the light transmitting portion 201 has light transmittance, and the exposure light transmitted through the light transmitting portion 201 is applied to the spacer forming layer 12. Thereby, the spacer formation layer 12 is selectively exposed, and a portion (exposed portion) irradiated with the exposure light is photocured.
  • the exposure processing is performed so that the width and height of the exposure portion, that is, the width and height of the wall portion 104 'satisfy the above-described relational expressions ⁇ 1> to ⁇ 3>, respectively.
  • the spacer forming layer 12 is exposed to the spacer forming layer 12 with the support base 11 attached thereto, and the spacer forming layer 12 is exposed through the support base 11. Irradiate light.
  • the support base 11 functions as a protective layer of the spacer forming layer 12, and it is possible to effectively prevent foreign matters such as dust from adhering to the surface of the spacer forming layer 12. Moreover, even if a foreign substance adheres on the support substrate 11, the foreign substance can be easily removed. Further, as described above, when the mask 20 is installed, the distance between the mask 20 and the spacer forming layer 12 can be further reduced without the mask 20 sticking to the spacer forming layer 12. As a result, it is possible to prevent the image formed by the exposure light applied to the spacer forming layer 12 through the mask 20 from being blurred, and to sharpen the boundary between the exposed portion and the unexposed portion. Can do. As a result, the spacer 12A can be formed with excellent dimensional accuracy, and the gap portion 105 can be formed with a desired shape and size close to the design. Thereby, the reliability of the semiconductor device 100 can be improved.
  • the alignment of the mask 20 with respect to the semiconductor wafer 101 ′ can be performed by aligning the alignment mark provided on the semiconductor wafer 101 ′ with the alignment mark provided on the mask 20. it can.
  • the distance between the support base 11 and the mask 20 is preferably 0 to 2000 ⁇ m, and more preferably 0 to 1000 ⁇ m. Thereby, the image formed by the exposure light irradiated to the spacer formation layer 12 through the mask 20 can be made clearer, and the spacer 104 can be formed with excellent dimensional accuracy.
  • the exposure process in a state where the support base 11 and the mask 20 are in contact with each other.
  • the distance between the spacer formation layer 12 and the mask 20 can be stably kept constant over the whole area.
  • the portion of the spacer forming layer 12 to be exposed can be exposed uniformly, and the spacer 12A having excellent dimensional accuracy can be formed more efficiently.
  • the distance between the spacer formation layer 12 and the mask 20 can be freely chosen by selecting the thickness of the support base material 11 suitably. Can be set accurately. Further, by reducing the thickness of the support substrate 11, the distance between the spacer formation layer 12 and the mask 20 is made smaller, and the support substrate 11 is formed by light irradiated to the spacer formation layer 12 through the mask 20. It is possible to prevent image blurring.
  • the spacer forming layer 12 may be subjected to a heat treatment at a temperature of about 40 to 80 ° C. as necessary (post-exposure heating step (PEB step)).
  • PEB step post-exposure heating step
  • the temperature of the heat treatment may be in the above range, but is more preferably 50 to 70 ° C. In development processing described later, unintentional peeling of the photocured portion of the spacer forming layer 12 can be more effectively prevented.
  • the support base material 11 is removed (support base material removal process). That is, the support base material 11 is peeled from the spacer forming layer 12.
  • the support base 11 is removed prior to development, thereby preventing the adhesion of foreign matters such as dust to the spacer formation layer 12 during the exposure as described above. Twelve patterning can be performed.
  • the uncured portion (unexposed portion) of the spacer forming layer 12 is removed using a developer (development process). Thereby, the photocured portion (that is, the wall portion 104 ′) of the spacer forming layer 12 remains, and the spacer 12A and the gap portion 105 are formed.
  • the developing method is not particularly limited as long as the uncured portion of the spacer forming layer 12 can be removed.
  • a liquid piling method, a dipping method, a shower developing method, etc. can be used.
  • the development in this step is performed by developing the developer L while rotating the semiconductor wafer 101 ′ on which the spacer forming layer 12 is formed around an axis Z perpendicular to the plate surface and passing near the center. Is preferably applied to the spacer forming layer 12.
  • the nozzle 300 provided above the semiconductor wafer 101 ′ sprays or sprays the developer L downward to apply the developer L to the spacer forming layer 12.
  • the spraying direction of the developer L (the axial direction of the nozzle 300) may be orthogonal to or inclined with respect to the plate surface of the semiconductor wafer 101 '.
  • the direction of jetting the developer L (the axial direction of the nozzle 300) is inclined with respect to the plate surface of the semiconductor wafer 101 ′, the developer L is jetted in the same direction with respect to the rotation direction of the semiconductor wafer 101 ′ (parallel).
  • the axial direction of the nozzle 300 may be inclined so as to flow), or the axial direction of the nozzle 300 may be inclined so that the developer L is jetted in the opposite direction (counterflow) with respect to the rotation direction of the semiconductor wafer 101 ′. You may do it.
  • the axial direction of the nozzle 300 may be inclined so that the developer L is ejected from the center of the semiconductor wafer 101 ′ toward the outside.
  • the spray pressure of the developer L from the nozzle 300 is not particularly limited, but is preferably 0.01 to 0.5 MPa, more preferably 0.1 to 0.3 MPa.
  • the ejection time (development processing time) of the developer L from the nozzle 300 is not particularly limited, but is preferably 3 to 3600 seconds, and more preferably 15 to 1800 seconds.
  • the jet of the developer L from the nozzle 300 may be continuous or intermittent (intermittent).
  • the number of nozzles 300 is one in the example shown in FIG. 7, but a plurality of nozzles 300 may be provided.
  • the uncured portion of the spacer forming layer 12 is dissolved and removed in the developer L.
  • the uncured part may not be completely dissolved in the developer L, and a part of the uncured part may become a solid suspended matter.
  • the wall portion 104 ′ is formed such that the plurality of gap portions 105 each have a rectangular shape and are arranged in a matrix.
  • the spacer 12A having the wall portion 104 'having such a shape is used, the above problem becomes particularly significant.
  • the present inventors have found that the occurrence of the above problem can be prevented by optimizing the width and height of the wall 104 '.
  • the suspended matter S can be efficiently removed by the flow of the developer L.
  • the developer L when the developer L is applied to the spacer forming layer 12 while rotating the semiconductor wafer 101 ′ around the axis Z as shown in FIG. 7, such development is performed by providing the spacer forming layer 12 of the semiconductor wafer 101 ′.
  • the solid suspended matter S moves over the wall 104 ′ and is removed by the centrifugal force generated by the rotation of the semiconductor wafer 101 ′.
  • the obtained semiconductor wafer bonded body 1000 has excellent reliability.
  • the width W of the wall portion 104 ′ may be any width that satisfies the above relational expressions ⁇ 1> and ⁇ 3>, but is preferably 50 to 2500 ⁇ m, and more preferably 100 to 2000 ⁇ m. . This makes it easier for the suspended matter to get over the wall portion 104 ′ and to ensure the strength required for the spacer 104.
  • the width W of the wall 104 ′ refers to the average width of the wall portion 104 ′.
  • the height H of the wall portion 104 ′ may be any as long as it satisfies the above relational expressions ⁇ 2> and ⁇ 3>, but is preferably 5 to 250 ⁇ m, and more preferably 10 to 200 ⁇ m. . This makes it easier for the suspended matter to get over the wall portion 104 ′ and to ensure the strength required for the spacer 104.
  • the gap portion 105 having a size required for the spacer 104 cannot be formed in the obtained semiconductor device 100.
  • the height H of the wall portion 104 ′ exceeds the upper limit value, it becomes difficult for the solid suspended matter S to get over the wall portion 104 ′.
  • the ratio W / H between the width W and the height H of the wall portion 104 ′ may satisfy the relational expressions ⁇ 1> to ⁇ 3>, but is 0.22 to 480. Preferably, it is 0.52 to 180.
  • the suspended matter S can easily and reliably get over the wall portion 104 ′, and as a result, the above problem can be solved while preventing the time required for the development processing of the spacer forming layer 12 from being prolonged. it can.
  • the developer L is determined according to the constituent material of the spacer forming layer 12 and the like, and is not particularly limited. Various developers can be used, but the specific gravity of the developer L is A, and the wall portion 104 ′. When the specific gravity of the resin composition constituting 0.5 ⁇ A / B ⁇ 2 It is preferable to satisfy the following relational expression. In particular, it is more preferable to satisfy the relational expression of 0.60 ⁇ A / B ⁇ 1.5, and it is even more preferable to satisfy the relational expression of 0.65 ⁇ A / B ⁇ 1.2. Thereby, the solid suspended matter can be efficiently removed by the flow of the developer.
  • a / B is less than the lower limit value, the solid suspended matter S tends to adhere to the wall 104 'or the like.
  • a / B exceeds the upper limit, the developer L may remain on the semiconductor wafer 101 'or the like even after a cleaning step described later.
  • the spacer forming layer 12 is configured to contain the alkali-soluble resin as described above, an alkali solution can be used as the developer.
  • the pH of the alkaline solution used is preferably 9.5 or more, more preferably about 11.0 to 14.0. Thereby, the spacer forming layer 12 can be efficiently removed.
  • Examples of such an alkaline solution include an aqueous solution of an alkali metal hydroxide such as NaOH and KOH, an aqueous solution of an alkaline earth metal hydroxide such as Mg (OH) 2 , an aqueous solution of tetramethylammonium hydroxide, Examples thereof include amide organic solvents such as N, N-dimethylformamide (DMF) and N, N-dimethylacetamide (DMA), and these can be used alone or in combination.
  • an alkali metal hydroxide such as NaOH and KOH
  • an aqueous solution of an alkaline earth metal hydroxide such as Mg (OH) 2
  • an aqueous solution of tetramethylammonium hydroxide examples thereof include amide organic solvents such as N, N-dimethylformamide (DMF) and N, N-dimethylacetamide (DMA), and these can be used alone or in combination.
  • the wall 104 ′ and the semiconductor wafer 101 ′ on which the wall 104 ′ is formed are cleaned using a cleaning liquid (cleaning process).
  • step A2-3) and before the joining step (step ⁇ A3 >>) described later even if the solid suspended matter S remains after the development, The suspended matter S can be efficiently removed by the flow of the cleaning liquid.
  • This cleaning method (a method for applying a cleaning liquid) is not particularly limited, and for example, a known method such as a liquid filling method, a dipping method, or a shower cleaning method can be used.
  • the cleaning in this step is performed so that the semiconductor wafer 101 ′ on which the spacer forming layer 12 (wall portion 104 ′) is formed is perpendicular to the plate surface.
  • the cleaning liquid is not particularly limited, and various cleaning liquids can be used.
  • the specific gravity of the resin composition constituting the wall 104 ′ is B and the specific gravity of the cleaning liquid is C, 0.5 ⁇ C / B ⁇ 2 It is preferable to satisfy the following relational expression. In particular, it is more preferable to satisfy the relational expression of 0.60 ⁇ C / B ⁇ 1.5, and it is even more preferable to satisfy the relational expression of 0.65 ⁇ C / B ⁇ 1.2. Thereby, the solid suspended matter S can be efficiently removed by the flow of the cleaning liquid.
  • step A2-5 Next, as shown in FIG. 5C, the cleaning liquid used in step A2-4 described above is removed (drying step).
  • the cleaning step is performed after the cleaning (step A2-4) and before the bonding step (step ⁇ A3 >>), the cleaning liquid remains in the finally obtained semiconductor wafer bonded body 1000, and the adverse effect is caused. Can be prevented. Further, in the manufacture of the semiconductor wafer bonded body 1000, the production efficiency can be improved while improving the quality.
  • This drying step is the same as the rotation of the semiconductor wafer 101 ′ in the development method of the above-described step A2-3 (see FIG. 7), and the semiconductor wafer 101 ′ on which the wall 104 ′ is formed is perpendicular to the plate surface and It is preferably performed by rotating around an axis passing through the vicinity of the center. As a result, even if the solid suspended matter S remains after the cleaning step described above, the solid suspended matter S gets over the wall 104 ′ by the centrifugal force generated by the rotation of the semiconductor wafer 101 ′ when the cleaning liquid is removed. Removed.
  • the bonding between the spacer 12A and the transparent substrate 102 ' can be performed, for example, by bonding the upper surface of the formed spacer 12A and the transparent substrate 102' and then thermocompression bonding.
  • thermocompression bonding is preferably performed within a temperature range of 80 to 180 ° C.
  • ⁇ A4 Step of performing predetermined processing or processing on the lower surface of the semiconductor wafer 101 ′ A4-1
  • the surface (lower surface) 111 opposite to the transparent substrate 102 of the semiconductor wafer 101 ′ is ground (back grinding process).
  • the grinding of the surface 111 of the semiconductor wafer 101 ′ can be performed using, for example, a grinding device (grinder).
  • the thickness of the semiconductor wafer 101 ′ varies depending on the electronic device to which the semiconductor device 100 is applied, but is usually set to about 100 to 600 ⁇ m and is applied to a smaller electronic device. Is set to about 50 ⁇ m.
  • solder bumps 106 are formed on the surface 111 of the semiconductor wafer 101 ′.
  • wiring is also formed on the surface 111 of the semiconductor wafer 101 '.
  • the semiconductor wafer bonded body 1000 is separated into pieces for each individual circuit formed on the semiconductor wafer 101 ′, that is, for each gap portion 105.
  • the wall 104 ' is formed such that the plurality of gaps 105 form a square shape and are arranged in a matrix. Therefore, by cutting (dicing) the semiconductor wafer bonded body 1000 into a lattice shape and dividing it into pieces, a plurality of semiconductor devices 100 can be obtained simply and efficiently.
  • the semiconductor wafer bonded body 1000 is divided into notches 21 along the lattice of the spacer 104 by a dicing saw from the semiconductor wafer 101 ′ side. After the insertion, it is performed by making a cut corresponding to the cut 21 using a dicing saw from the transparent substrate 102 ′ side.
  • the semiconductor device 100 can be manufactured. In this way, by separating the semiconductor wafer bonded body 1000 into individual pieces and obtaining a plurality of semiconductor devices 100 in a lump, the semiconductor devices 100 can be mass-produced and productivity can be improved.
  • the semiconductor device 100 obtained by separating the semiconductor wafer bonded body 1000 into individual pieces also has excellent reliability.
  • the semiconductor wafer bonded body 1000 and the semiconductor device 100 having excellent reliability can be manufactured with a high yield.
  • the semiconductor device 100 thus obtained is mounted on, for example, a substrate on which wiring is patterned, and the wiring on the substrate and the wiring formed on the lower surface of the base substrate 101 are connected via the solder bumps 106. Are electrically connected.
  • the semiconductor device 100 can be widely applied to electronic devices such as a mobile phone, a digital camera, a video camera, and a small camera, for example, while being mounted on a substrate as described above.
  • one or two or more arbitrary steps may be added.
  • PLB process post-lamination heating process
  • the exposure is performed once has been described.
  • the present invention is not limited to this.
  • the exposure may be performed a plurality of times.
  • each part of the semiconductor wafer bonded body and the semiconductor device of the present invention can be replaced with any configuration that exhibits the same function, and any configuration can be added.
  • the spacer forming layer is formed by transferring from the sheet-like support substrate to one surface side of the semiconductor wafer 101 ′.
  • the method for forming the spacer forming layer is not limited thereto. Instead, for example, a curable resin composition (resin varnish) may be directly formed on one surface side of the semiconductor wafer 101 ′ using various coating methods.
  • the case where a negative resin composition in which an exposed portion is removed by a developer is used as the resin composition of the spacer forming layer 12 is described as an example.
  • an unexposed portion is formed by a developer.
  • the positive-type resin composition to be removed may be used.
  • the glycidyl methacrylate 180.9g was dripped in it in 30 minutes, and the methacryloyl modified novolak-type bisphenol A resin MPN001 (methacryloyl modification rate 50%) with a solid content of 74% was obtained by stirring reaction at 100 ° C. for 5 hours. .
  • resin varnish of resin composition constituting spacer forming layer As photopolymerizable resin, 15% by weight of trimethylolpropane trimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd., Light Ester TMP), epoxy vinyl ester resin (Kyoeisha Chemical Co., Ltd.) ), Epoxy ester 3002M) 5% by weight, epoxy resin which is a thermosetting resin, 5% by weight of bisphenol A novolac type epoxy resin (manufactured by Dainippon Ink & Chemicals, Inc., Epicron N-865), bisphenol A type 10% by weight of epoxy resin (Japan Epoxy Resin Co., Ltd., YL6810), 5% by weight of silicone epoxy resin (Toray Dow Corning Silicone Co., Ltd., BY16-115), phenol novolac resin (Sumitomo Bakelite Co., Ltd.) PR53647) 3% by weight, alkali acceptable As a soluble resin, 55 wt
  • the resin varnish prepared as described above is applied onto the supporting base material with a comma coater (manufactured by Yurai Seiki Co., Ltd., “Model No. MFG No. 194001 type 3-293”) to form a coating film composed of the resin varnish. Formed. Then, the film for spacer formation was obtained by drying the formed coating film at 80 degreeC for 20 minutes, and forming a spacer formation layer. In the obtained spacer forming film, the average thickness of the spacer forming layer was 50 ⁇ m. Moreover, the specific gravity of the resin composition (after drying) constituting the spacer forming layer was 1.2.
  • bonded body First, a semiconductor wafer (Si wafer, diameter 20.3 cm, thickness 725 ⁇ m) having an approximately circular shape and 8 inches in diameter was prepared.
  • the spacer forming film manufactured above was laminated on the semiconductor wafer under the conditions of a roll temperature of 60 ° C., a roll speed of 0.3 m / min, and a syringe pressure of 2.0 kgf / cm 2.
  • a semiconductor wafer with a spacer forming film was obtained.
  • a mask having a light transmission part having the same shape as that of the spacer to be formed in plan view was prepared, and the mask was placed so as to face the spacer forming film. At this time, the distance between the mask and the supporting substrate was set to 0 mm.
  • the spacer forming layer is selected in a lattice pattern by irradiating the semiconductor wafer with the spacer forming film through the mask with ultraviolet rays (wavelength 365 nm, integrated light quantity 700 mJ / cm 2 ) from the spacer forming film side. After the exposure, the supporting substrate was removed. In the exposure of the spacer forming layer, 50% of the spacer forming layer was seen in plan view so that the width of the exposed portion exposed in a grid pattern was 600 ⁇ m.
  • TMAH tetramethylammonium hydroxide
  • alkaline solution alkaline solution
  • the development was performed by spraying the developer toward the spacer forming layer at a developer pressure (spray pressure) of 0.2 MPa for 90 seconds while rotating the semiconductor wafer. Further, the specific gravity of the developer was 1.0.
  • the spacer (wall part) was washed with pure water as a washing liquid, and then dried.
  • the cleaning was performed by spraying the cleaning liquid toward the wall (spacer) and the semiconductor wafer at a cleaning liquid pressure (spray pressure) of 0.2 MPa for 90 seconds while rotating the semiconductor wafer. .
  • the specific gravity of the cleaning liquid was 1.0.
  • the drying was performed by rotating the semiconductor wafer for 90 seconds as shown in FIG.
  • a transparent substrate (quartz glass substrate, diameter: 20.3 cm, thickness: 725 ⁇ m) is prepared, and the substrate is bonded to a semiconductor wafer on which a spacer is formed, a substrate bonder (manufactured by SUSS MICROTECH, “SB8e”). ) was used to produce a bonded semiconductor wafer in which the semiconductor wafer and the transparent substrate were bonded via a spacer.
  • a substrate bonder manufactured by SUSS MICROTECH, “SB8e”.
  • Example 2 A bonded semiconductor wafer was produced in the same manner as in Example 1, except that the resin varnish of the resin composition constituting the spacer forming layer was prepared as follows.
  • photopolymerizable resin trimethylolpropane trimethacrylate (manufactured by Kyoeisha Chemical Co., Ltd., light ester TMP) 11% by weight, epoxy vinyl ester resin (manufactured by Kyoeisha Chemical Co., Ltd., epoxy ester 3002M) 4% by weight, thermosetting As an epoxy resin, which is a resin, 4% by weight of bisphenol A novolak type epoxy resin (Dainippon Ink and Chemicals, Epicron N-865), bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., YL6810) 8 4% by weight, silicone epoxy resin (Toray Dow Corning Silicone Co., Ltd., BY16-115) 4% by weight, phenol novolac resin (Sumitomo Bakelite Co., Ltd., PR53647) 2% by weight, MPN001 as an alkali-soluble resin is solid 42 weight per minute , 2% by weight of a photopolymerization
  • the floating material when developing the exposed spacer forming layer, even if a solid floating material is generated, the floating material easily gets over the wall. Therefore, the suspended matter can be efficiently removed by the flow of the developing solution. Therefore, it is possible to prevent the floating substance from remaining as a residue in the obtained semiconductor wafer bonded body. As a result, the obtained semiconductor wafer bonded body has excellent reliability.
  • a semiconductor device obtained by separating such a semiconductor wafer bonded body has excellent reliability.
  • the present invention has industrial applicability.

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Abstract

La présente invention concerne un procédé de fabrication d'un ensemble tranche à semi-conducteur qui comprend une étape dans laquelle une couche de formation d'espacement est exposée par éclairage sélectif en utilisant une lumière d'exposition et puis développée en utilisant un développeur, laissant une section paroi (104'). La largeur (W, en μm) de la section paroi (104') et la hauteur (H, en μm) de la section paroi (104') satisfont chacune des relations suivantes : (1) 15 ≤ W ≤ 3000, (2) 3 ≤ H ≤ 300, et (3) 0,10 ≤ W/H ≤ 900. Cette configuration peut empêcher un résidu de matières solides suspendues, créé durant le procédé de développement lors de la formation d'un espacement entre une tranche à semi-conducteur et un substrat transparent par l'intermédiaire d'un procédé d'exposition et un procédé de développement, d'être laissé.
PCT/JP2011/056877 2010-03-26 2011-03-23 Procédé de fabrication d'un ensemble tranche à semi-conducteur, ensemble tranche à semi-conducteur, et dispositif à semi-conducteur Ceased WO2011118600A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197455A (ja) * 2004-01-07 2005-07-21 Nec Electronics Corp 半導体デバイス製造プロセスにおける現像処理方法およびこれを実施する現像処理装置
JP2006060084A (ja) * 2004-08-20 2006-03-02 Tokyo Electron Ltd 現像装置及び現像方法
JP2006270058A (ja) * 2005-03-24 2006-10-05 Taiwan Semiconductor Manufacturing Co Ltd 半導体デバイス

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197455A (ja) * 2004-01-07 2005-07-21 Nec Electronics Corp 半導体デバイス製造プロセスにおける現像処理方法およびこれを実施する現像処理装置
JP2006060084A (ja) * 2004-08-20 2006-03-02 Tokyo Electron Ltd 現像装置及び現像方法
JP2006270058A (ja) * 2005-03-24 2006-10-05 Taiwan Semiconductor Manufacturing Co Ltd 半導体デバイス

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