WO2011108338A1 - Paste for electron emitting source, electron emitting source and electron emitting element each comprising same, and process for production of same - Google Patents
Paste for electron emitting source, electron emitting source and electron emitting element each comprising same, and process for production of same Download PDFInfo
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- WO2011108338A1 WO2011108338A1 PCT/JP2011/052581 JP2011052581W WO2011108338A1 WO 2011108338 A1 WO2011108338 A1 WO 2011108338A1 JP 2011052581 W JP2011052581 W JP 2011052581W WO 2011108338 A1 WO2011108338 A1 WO 2011108338A1
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- electron emission
- emission source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Definitions
- the present invention relates to an electron emission source paste, an electron emission source and an electron emission element using the paste, and a method of manufacturing the same.
- Carbon-based materials such as carbon nanotubes, carbon nanofibers, carbon nanohorns, carbon nanocoils, and carbon nanowalls are not only excellent in physical and chemical durability, but also have sharp tip shapes suitable for field emission. And has a large aspect ratio. Therefore, various applied researches such as field emission displays (FED) using carbon-based materials as electron emission sources, liquid crystal backlight units (LCD-BLU) using field emission, lighting equipment, X-ray sources, etc. are promising. Has been done.
- FED field emission displays
- LCD-BLU liquid crystal backlight units
- One method for producing an electron emission source using a carbon-based material is to paste a carbon-based material (for example, carbon nanotube) and apply it to a cathode substrate.
- a carbon nanotube-containing paste is formed on a cathode electrode, heat-treated, and then subjected to an activation treatment such as a tape peeling method or a laser irradiation method on the film surface.
- the paste material used in this method includes a carbon nanotube-containing paste containing glass powder (for example, see Patent Document 1), a carbonate-containing paste (for example, see Patent Document 2), or a metal carbonate-containing paste. (For example, refer to Patent Document 3).
- binder resin is removed by baking. For this reason, a technique using a heat extinguisher material at a relatively low temperature has been proposed so that the residue does not easily remain (see, for example, Patent Document 4).
- the activation treatment is to expose the carbon nanotubes on the surface of the electron emission source in order to obtain good electron emission characteristics.
- the activation process can be omitted, it can greatly contribute to further cost reduction.
- a porous electron emission source in which an electron emission material protrudes from the pore wall has been proposed as a material capable of obtaining good electron emission characteristics without performing brushing treatment (for example, Patent Document 5). reference).
- plastic particles such as polymethyl methacrylate are mixed in a carbon nanotube-containing paste, and the plastic particles are burned in a heat treatment process to form voids in the regions where the particles existed, thereby forming continuous holes. Is. Since the carbon nanotube protrudes from the hole wall, the activation process is unnecessary.
- Patent Document 5 has a problem that the voltage required for electron emission increases. There is also a problem that the light emission uniformity is not good.
- the present invention pays attention to the above-mentioned problems, eliminates the activation treatment step of exposing the carbon nanotubes on the surface of the electron emission source, and enables the emission of electrons at a low voltage so that uniform emission can be obtained. It is another object of the present invention to provide an electron emission source using the same.
- the present invention is an electron emission source paste containing (A) an electron emission material, (B) a pyrolytic foaming agent, and (C) a component that generates shrinkage stress during thermal decomposition.
- Another aspect of the present invention is for an electron emission source comprising (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group. It is a paste.
- the present invention it is possible to omit the activation process step of exposing the carbon nanotubes on the surface of the electron emission source, so that it is possible to reduce the cost of equipment, materials, etc. required for the activation process step in the manufacture of the electron emission source. It is. Further, according to the present invention, it is possible to obtain an electron emission source capable of emitting electrons at a low voltage and obtaining uniform light emission even though activation processing is unnecessary.
- the electron emission source paste of the present invention contains (A) an electron emission material, (B) a pyrolytic foaming agent, and (C) a component that generates shrinkage stress during thermal decomposition.
- Another embodiment of the paste for an electron emission source according to the present invention includes (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group, Is included.
- the present invention also relates to an electron emission source and an electron emission device obtained by using the same, and a method for manufacturing them.
- the paste for an electron emission source of the present invention it is possible to emit electrons at a low voltage without performing an activation treatment such as a tape peeling method or a laser irradiation method, excellent adhesion to the cathode electrode, and uniform.
- An electron emission source capable of emitting light can be obtained.
- the electron emission source obtained by applying the electron emission source paste of the present invention on the substrate and heat-treating was observed, it was found that the electron emission source was cracked and the carbon nanotubes protruded from the crack. Therefore, it is considered that the electron emission can be obtained from the carbon nanotube protruding from the crack without performing the activation treatment.
- a force that pulls out the carbon nanotubes in a direction substantially perpendicular to the cross section (crack surface) generated by the cracks inside the electron emission source works. Therefore, the protruding length of the carbon nanotube is increased and the aspect ratio is increased.
- the protruding length of the carbon nanotube from the crack surface is preferably 0.5 ⁇ m or more, more preferably 1.0 ⁇ m or more, and 3.0 ⁇ m or more. Is more preferably 4.0 ⁇ m or more, and further preferably 5.0 ⁇ m or more. This can be achieved by using the paste for electron emission source of the present invention. If the length of the protruding carbon nanotube is such that it does not short-circuit with the gate electrode or anode electrode, the longer the protruding length of the carbon nanotube, the lower the voltage required for electron emission. Can do. Some projecting carbon nanotubes exist so as to bridge between cracks, but such ones may be included.
- (B) pyrolytic foaming agent contributes greatly to the occurrence of cracks.
- the pyrolytic foaming agent is a substance that thermally decomposes to release a gas and generate bubbles in the paste film for the electron emission source. It is considered that many cracks are likely to be generated by the bubbles being the starting point of cracks. As the number of cracks increases, the exposed electron emission material increases, so that the light emission uniformity is improved.
- (C) a component that generates shrinkage stress during thermal decomposition contributes greatly to the generation of the crack. It is considered that when a large shrinkage stress is applied to the electron emission source during the thermal decomposition due to the influence of the component (C), the generated crack grows.
- components that generate shrinkage stress during thermal decomposition include compounds such as metal salts, organometallic compounds, metal complexes, silane coupling agents, and titanium coupling agents. These are decomposed by heating. However, they are not completely burned down by combustion or decomposition like the plastic particles described in Patent Document 5, but have the characteristic of finally remaining as metal oxides or silicon compounds.
- components having characteristics that do not completely disappear even when heated to the paste firing temperature are collectively referred to as “residual compounds”. Since this residual compound shrinks during thermal decomposition, a shrinkage stress is generated in the paste film for the electron emission source, and a crack can be formed in the electron emission source after firing. Since the shrinkage stress is large, a carbon nanotube having a long protruding length can be obtained in the electron emission source when the width of the crack is large, and the voltage required for electron emission is reduced.
- a component combining a thermal polymerization initiator and a compound containing an ethylenically unsaturated group can be cited.
- the thermal polymerization initiator is decomposed by heating to generate radicals, and is used to crosslink the double bond portion of the ethylenically unsaturated group-containing compound.
- a large shrinkage stress is applied to the electron emission source during thermal decomposition.
- it is considered that a crack is generated starting from the defect and grows.
- the voltage required for electron emission can be lowered similarly to the “residual compound”.
- each of the above components may be provided with a plurality of properties of gas release, cross-linking promotion, and ethylenically unsaturated group content with one substance.
- a thermal polymerization initiator containing an ethylenically unsaturated group can be mentioned. This is also included in the vanishing cracking agent.
- a thermal polymerization initiator that functions as a thermal decomposition type foaming agent (D) and contains an ethylenically unsaturated group is used instead of using the component (B) and the component (C) separately. In these cases, the same effect can be obtained because the three elements are included in each paste.
- thermo polymerization initiator that functions as a thermally decomposable foaming agent and contains an ethylenically unsaturated group is a thermal polymerization initiator that contains an ethylenically unsaturated group, and (B) It also serves as a pyrolytic foaming agent.
- the disappearing crack generating agent when using a substance that doubles as a pyrolytic foaming agent and a thermal polymerization initiator and an ethylenically unsaturated group-containing compound, or an ethylenically unsaturated group
- a substance that doubles as a pyrolytic foaming agent and a thermal polymerization initiator and an ethylenically unsaturated group-containing compound, or an ethylenically unsaturated group
- the thermal decomposition type foaming agent and thermal polymerization initiator to contain are also mentioned. Since these have the role of a pyrolytic foaming agent, they may be used together with the component (B) or the component (B) may be omitted.
- components (C) that generate shrinkage stress during thermal decomposition include siloxane materials and silicone materials.
- the component (C) preferably generates a shrinkage stress below the firing temperature of the electron emission source paste.
- the component (C) preferably generates a shrinkage stress at a temperature of 100 ° C. or more and 500 ° C. or less.
- 150 degreeC or more is more preferable, and 200 degreeC or more is further more preferable.
- 450 degrees C or less is more preferable, and 400 degrees C or less is further more preferable. Any preferred lower limit can be combined with any preferred upper limit.
- thermogravimetric analysis by TGA is performed on the components in an inert gas atmosphere at a temperature rising rate of 10 ° C./min.
- the point at which the slope of the TGA curve obtained as a result changes negatively is defined as the thermal decomposition temperature of the component.
- the temperature range after the thermal decomposition temperature where the slope is negative is included in the range of 100 ° C. or more and 500 ° C. or less, the component generates shrinkage stress at a temperature of 100 ° C. or more and 500 ° C. or less. is there. This is because when the slope of the TGA curve after the thermal decomposition temperature is negative, that is, when the weight is reduced, it indicates that the material continues to undergo thermal decomposition.
- the generation of bubbles due to the pyrolytic foaming agent and the generation of shrinkage stress due to the residual compound or the extinguishing cracking agent occur stepwise or concurrently in the heat treatment process, and cracks occur. It is estimated that the generation and growth of
- (I) selected from the group consisting of (A) an electron emitting material, (B) a pyrolytic foaming agent, and (C) a metal salt, an organometallic compound, a metal complex, a silane coupling agent, and a titanium coupling agent.
- An electron emission source paste containing at least one substance.
- An electron emission source paste containing (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group.
- the crack of the electron emission source of the present invention refers to a rift formed in the electron emission source as shown in FIG. 1 and having a width of 0.5 ⁇ m or more.
- the width of the crack means a measurement of the width of the crack in the surface portion of the electron emission source, as indicated by reference numeral 3 in FIG.
- the depth of the crack may or may not reach the cathode substrate.
- FIG. 2 shows an electron micrograph of a crack on the surface of an electron emission source using basic magnesium carbonate as a residual compound and azodicarbonamide as a pyrolytic foaming agent, and an electron micrograph of a carbon nanotube protruding from the crack surface.
- Fig. 4 shows an optical micrograph of a crack on the surface of an electron emission source using t-butyl peroxylaurate and tetrapropylene glycol dimethacrylate as a disappearing crack generator and azodicarbonamide as a pyrolytic foaming agent.
- An electron micrograph of the carbon nanotube protruding from the surface is shown in FIG.
- (A) electron emission materials used in field emission displays and the like include metal materials typified by molybdenum, acicular carbon such as carbon nanotubes, carbon nanofibers, carbon nanohorns, carbon nanocoils, and carbon nanotwists, There are carbon-based materials represented by diamond, diamond-like carbon, graphite, carbon black, fullerene, and graphene. In the present invention, any of these can be used, but it is preferable to use acicular carbon because low voltage driving is possible due to low work function characteristics. Among the acicular carbons, carbon nanotubes are more preferable because of their high aspect ratio and good electrical emission characteristics.
- an electron emission source paste using carbon nanotubes as representative of acicular carbon will be described as an example.
- Carbon nanotubes may be single-walled or multi-walled, such as two or three, and any of them is preferably used. A mixture of carbon nanotubes having different numbers of layers may be used. Since the unpurified carbon nanotube powder may contain impurities such as amorphous carbon and catalytic metal, it can be used with increased purity by performing purification such as acid treatment. Further, in order to adjust the length of the carbon nanotube, the carbon nanotube powder may be pulverized by an ultrasonic wave, a ball mill, a bead mill or the like.
- the content of the (A) electron-emitting material with respect to the whole electron-emitting source paste is preferably 0.1 to 20% by weight. Further, it is more preferably 0.1 to 10% by weight, and further preferably 0.1 to 5.0% by weight. When the content of the electron emission material is within the above range, good dispersibility, printability, and pattern formability of the electron emission source paste can be obtained.
- the pyrolytic foaming agent is preferably one that decomposes in the range of 50 to 300 ° C. to release gas, more preferably one that decomposes at 100 to 250 ° C. to release gas, and 150 to 250 ° C. What decomposes
- decomposing in the range of 50 to 300 ° C. means that the thermal decomposition temperature obtained by the TGA measurement is in the range of 50 to 300 ° C.
- thermal decomposition type foaming agent examples include azo compounds such as azodicarbonamide and azobisisobutyronitrile, dinitrosopentamethylenetetramine, N, N′-dinitroso-N, N′-dimethylterephthalamide and the like.
- the thermal decomposable foaming agent is preferably present as particles in the electron emission source paste because it can promote crack formation.
- Such thermally decomposable foaming agent particles preferably have an average particle size of 1.0 ⁇ m or more as a lower limit, more preferably 3.0 ⁇ m or more, and even more preferably 6.0 ⁇ m or more. .
- an upper limit it is preferable that it is 25 micrometers or less, It is more preferable that it is 20 micrometers or less, It is further more preferable that it is 15 micrometers or less. Any preferred lower limit can be combined with any preferred upper limit.
- the average particle size of the thermally decomposable foaming agent particles is not less than the above lower limit value, crack formation can be further promoted and the voltage required for electron emission can be lowered. Moreover, since it is less than the said upper limit and the surface unevenness
- the average particle diameter refers to a cumulative 50% particle diameter (D 50 ). This represents the particle size at which the volume cumulative curve is 50% when the volume cumulative curve is determined with the total volume of one powder group as 100%. This is used as one of the parameters for evaluating the particle size distribution.
- the particle size distribution of the pyrolyzable foaming agent particles can be measured by a microtrack method (a method using a microtrack laser diffraction type particle size distribution measuring device manufactured by Nikkiso Co., Ltd.).
- the content of the (B) pyrolytic foaming agent with respect to the whole paste for electron emission source is preferably 1.0% by weight or more, more preferably 2.0% by weight or more as a lower limit. It is more preferably 0% by weight or more, more preferably 5.0% by weight or more, and further preferably 10% by weight or more. Moreover, as an upper limit, it is preferable that it is 30 weight% or less, and it is more preferable that it is 25 weight% or less. Any preferred lower limit can be combined with any preferred upper limit. Further, the content of the pyrolyzable foaming agent with respect to the entire solid content excluding the solvent from the electron emission source paste is preferably 1.0% by weight or more as a lower limit, and preferably 3.0% by weight.
- the content of the pyrolytic foaming agent is within the above range, uniform bubbles can be formed in the electron emission source coating film.
- Metal salts refer to carbonates, sulfates, nitrates, hydroxide salts, bicarbonates, acetates, halide salts and the like.
- the metal carbonate include potassium carbonate, calcium carbonate, sodium carbonate, barium carbonate, magnesium carbonate, lithium carbonate, copper carbonate (II), iron carbonate (II), silver carbonate (I), nickel carbonate, hydrotalcite and the like. Can be used.
- metal sulfate examples include zinc sulfate, aluminum sulfate, potassium sulfate, calcium sulfate, silver sulfate, potassium hydrogen sulfate, thallium sulfate, iron (II) sulfate, iron (III) sulfate, copper (I) sulfate, copper sulfate ( II), alums such as sodium sulfate, nickel sulfate, barium sulfate, magnesium sulfate, potassium alum and iron alum.
- Metal nitrates include magnesium nitrate, zinc nitrate, aluminum nitrate, uranyl nitrate, chlorine nitrate, potassium nitrate, calcium nitrate, silver nitrate, guanidine nitrate, cobalt nitrate, cobalt nitrate (II), cobalt nitrate (III), cesium nitrate, cerium nitrate Ammonium, iron nitrate, iron nitrate (II), iron nitrate (III), copper nitrate (II), sodium nitrate, lead nitrate (II), barium nitrate, rubidium nitrate and the like can be mentioned.
- Metal hydroxide salts include calcium hydroxide, magnesium hydroxide, manganese hydroxide, iron hydroxide (II), zinc hydroxide, copper hydroxide (II), lanthanum hydroxide, aluminum hydroxide, iron hydroxide ( III).
- Examples of the metal hydrogen carbonate include sodium hydrogen carbonate, potassium hydrogen carbonate, and calcium hydrogen carbonate.
- Metal halide salts are salts formed between metals such as alkali metals and alkaline earth metals and halogens such as fluorine, chlorine, bromine and iodine.
- sodium fluoride, potassium fluoride, calcium fluoride examples include lithium fluoride, sodium chloride, potassium chloride, magnesium chloride, calcium chloride, lithium bromide, sodium bromide, potassium bromide, potassium iodide, and sodium iodide.
- the metal acetate examples include sodium acetate, potassium acetate, calcium acetate, magnesium acetate and the like. These metal salts can be used either as anhydrides or hydrates.
- organometallic compound examples include compounds having a metal-carbon bond.
- metal elements constituting the organometallic compound include tin (Sn), indium (In), antimony (Sb), zinc (Zn), gold (Au), silver (Ag), copper (Cu), palladium (Pd), Examples include aluminum (Al), titanium (Ti), nickel (Ni), platinum (Pt), manganese (Mn), iron (Fe), cobalt (Co), chromium (Cr), and zirconium (Zn).
- groups included in the organic chain that forms an organometallic compound by combining with a metal element include acetyl group, alkyl group, alkoxy group, amino group, amide group, ester group, ether group, epoxy group, phenyl group, halogen There are groups.
- organometallic compound examples include trimethylindium, triethylindium, tributoxyindium, trimethoxyindium, triethoxyindium, tetramethyltin, tetraethyltin, tetrabutyltin, tetramethoxytin, tetraethoxytin, tetrabutoxytin, Examples thereof include tetraphenyltin, triphenylantimony, triphenylantimony diacetate, triphenylantimony oxide, and triphenylantimony halide.
- Examples of the metal complex include those having a structure in which a ligand is coordinated around the metal element mentioned in the organometallic compound.
- Examples of ligands that form metal complexes include amino groups, phosphino groups, carboxyl groups, carbonyl groups, thiol groups, hydroxyl groups, ether groups, ester groups, amide groups, cyano groups, halogen groups, thiocyano groups, pyridyl groups, Those having a lone pair of electrons such as a phenanthryl group.
- the ligand include triphenylphosphine, nitrate ion, halide ion, hydroxide ion, cyanide ion, thiocyan ion, ammonia, carbon monoxide, acetylacetonate, pyridine, ethylenediamine, bipyridine, phenanthroline. , BINAP, catecholate, terpyridine, ethylenediaminetetraacetic acid, porphyrin, cyclam, crown ethers and the like.
- the metal complex examples include an indium acetylacetonate complex, an indium ethylenediamine complex, an indium ethylenediaminetetraacetic acid complex, a tin acetylacetonate complex, a tin ethylenediamine complex, and a tin ethylenediaminetetraacetic acid.
- silane coupling agent examples include those having hydrolyzable silyl groups such as alkoxy groups, halogens, and acetoxy groups. Usually, an alkoxy group, particularly a methoxy group or an ethoxy group is preferably used. Moreover, as an organic functional group which a silane coupling agent has, an amino group, a methacryl group, an acrylic group, a vinyl group, an epoxy group, a mercapto group, an alkyl group, an allyl group, etc. can be mentioned.
- one kind selected from these coupling agents may be used alone, or two or more kinds may be used in combination. Moreover, you may use the self-condensate using the said coupling agent 1 type, and the heterogeneous condensate which combined 2 or more types.
- titanium coupling agent examples include those obtained by replacing the silane portion of the silane coupling agent with titanium.
- metal salts are preferably used.
- An electron emission source obtained by using an electron emission source paste containing a metal salt has a large crack size generated in the electron emission source, and a carbon nanotube has a long protruding length.
- low voltage driving is possible and light emission uniformity is good. This is presumably because the shrinkage stress generated during the thermal decomposition of the metal salt, which is an inorganic component, is larger than the contraction stress generated during the thermal decomposition of the organic component.
- metal carbonates, metal nitrates or metal sulfates are preferred in that they are thermally decomposed in a low temperature range of 100 to 500 ° C. Of these, metal carbonates are more preferred because they are most susceptible to cracking.
- MgO generated by thermal decomposition works as a secondary electron emission material, and the electron emission source can be driven at a low voltage, which is particularly preferable.
- the average particle size of the residual compound is preferably 0.5 to 10 ⁇ m.
- the average particle size of the residual compound is 0.5 ⁇ m or more, cracks can be generated by the shrinkage stress generated during thermal decomposition, and when it is 10 ⁇ m or less, the emitter surface unevenness is reduced and good emission uniformity is obtained.
- the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
- the content of the residual compound with respect to the entire paste for the electron emission source is preferably 1.0% by weight or more as a lower limit, more preferably 5.0% by weight or more, and 10% by weight or more. Is more preferable.
- an upper limit it is preferable that it is 30 weight% or less, and it is more preferable that it is 25 weight% or less. Any preferred lower limit can be combined with any preferred upper limit.
- the content of the residual compound with respect to the entire solid content excluding the solvent from the paste for the electron emission source is preferably 1.0% by weight or more as a lower limit, and more preferably 5.0% by weight or more. Preferably, it is 10% by weight or more.
- the content of the residual compound is within the above range, uniform cracks can be formed in the electron emission source coating film.
- thermal polymerization initiator examples include 2,2′-azobis (2-methylpropionitrile), 2,2′-azobis (2-methylbutyronitrile), 1,1′-azobis (cyclohexane) in the azo series. -1-carbonitrile), 1-[(1-cyano-1-methylethyl) azo] formamide (2- (carbamoylazo) isobutyronitrile), 2,2′-azobis ⁇ 2-methyl-N- [2 -(1-hydroxybutyl)] propionamide ⁇ , 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) -propionamide], 2,2′-azobis [N- (2-propenyl) -2-methylpropionamide], 2,2′-azobis (N-butyl-2-methylpropionamide), 2,2′-azobis (N-cyclohexyl-2-methylpropionamide), 2 2'-azobis (2,4,4-trimethylpentane) (azodi -t- o
- the component containing an ethylenically unsaturated group examples include a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group. In particular, it preferably has an acryloyl group or a methacryloyl group.
- the compound having an acryloyl group or a methacryloyl group include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, sec-butyl acrylate, isobutyl acrylate, tert-butyl acrylate, n-pentyl acrylate, Examples include allyl acrylate, benzyl acrylate, butoxyethyl acrylate, butoxytriethylene glycol acrylate, cyclohexyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, 2-ethylhexyl acrylate, and tetrapropylene glycol dimethacrylate.
- the component having an ethylenically unsaturated group is a monofunctional monomer having one ethylenically unsaturated group in one molecule, and the polyfunctional monomer having two or more is a bifunctional monomer or trifunctional.
- Monomers, tetrafunctional monomers, pentafunctional monomers, hexafunctional monomers and the like can be mentioned, and monofunctional or bifunctional monomers can be preferably used from the viewpoint of good thermal decomposability.
- (meth) acrylic acid or (meth) acrylic acid ester is used as a specific example of the monofunctional monomer.
- bifunctional monomer examples include aromatic divinyl monomers such as divinylbenzene, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6 -Polyalkylene glycol di (meta) such as alkylene glycol di (meth) acrylate such as hexanediol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetrapropylene glycol di (meth) acrylate ) Acrylate, urethane di (meth) acrylate, or polyester di (meth) acrylate.
- aromatic divinyl monomers such as divinylbenzene, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate,
- the component containing an ethylenically unsaturated group is not limited to these. These can be used alone or in combination of two or more.
- thermal polymerization initiator containing an ethylenically unsaturated group examples include a thermal polymerization initiator containing a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group.
- diallyl peroxydicarbonate bis (2-methyl-2-propenyl) peroxydicarbonate, bis (2-ethyl-2-propenyl) peroxydicarbonate, bis (1-methyl-2 -Propenyl) peroxydicarbonate, bis (2-methyl-2-butenyl) peroxydicarbonate, bis (2-methyl-2-propenyloxyethylperoxy) dicarbonate and the like.
- the substance that has the properties of both a pyrolytic foaming agent and a thermal polymerization initiator serves to promote crosslinking by heat.
- examples of such components include azo-based thermal polymerization initiators.
- thermally decomposable foaming agent containing an ethylenically unsaturated group examples include an azo compound containing a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group, a nitroso compound, and a hydrazide compound.
- Specific examples include phenylazoacrylanilide, N-methyl-N-nitrosoallylamine, homoallyl hydrazide and the like.
- the thermal polymerization initiator that functions as a thermally decomposable foaming agent and contains an ethylenically unsaturated group is preferably one that decomposes in the range of 50 to 300 ° C. and releases a gas, and is 100 to 250 ° C. Those that decompose and release a gas are more preferable, and those that decompose at 150 to 250 ° C. to release a gas are more preferable.
- Such a compound is preferably an azo compound, a nitroso compound, a hydrazide compound, an azide compound, or a hydrazone compound, and a thermal polymerization initiator containing an ethylenically unsaturated group. Specific examples include 2,2'-azobis [N- (2-propenyl) -2-methylpropionamide] which is an azo-based thermal polymerization initiator and contains an ethylenically unsaturated group.
- the thermal polymerization initiator that functions as a pyrolytic foaming agent and contains an ethylenically unsaturated group preferably has an average particle size of 1.0 ⁇ m or more as a lower limit, and 3.0 ⁇ m or more. It is more preferable that it is 6.0 ⁇ m or more. Moreover, as an upper limit, it is preferable that it is 25 micrometers or less, It is more preferable that it is 20 micrometers or less, It is further more preferable that it is 15 micrometers or less. Any preferred lower limit can be combined with any preferred upper limit.
- the average particle diameter of the thermal polymerization initiator that functions as the (D) pyrolytic foaming agent and contains an ethylenically unsaturated group is equal to or greater than the lower limit, crack formation is further promoted, and electrons The voltage required for discharge can be lowered. Moreover, since it is less than the said upper limit and the surface unevenness
- a disappearing crack generator and a residual compound may be used in combination.
- the content of the extinguishing crack generating agent with respect to the entire paste for electron emission source is preferably 1.0% by weight or more, more preferably 3.0% by weight or more as a lower limit, and 5.0% by weight. More preferably, it is the above. Moreover, as an upper limit, it is preferable that it is 50 weight% or less, It is more preferable that it is 40 weight% or less, It is further more preferable that it is 30 weight% or less. Any preferred lower limit can be combined with any preferred upper limit. Further, the content of the extinguishing crack generating agent with respect to the entire solid content excluding the solvent from the paste for electron emission source is preferably 1.0% by weight or more as a lower limit, and 5.0% by weight or more.
- a uniform crack can be formed in an electron emission source coating film as content of a vanishing crack generating agent exists in the said range.
- the electron emission source paste of the present invention can contain an inorganic powder. Any inorganic powder can be used as long as it plays a role as an adhesive. Considering that the heat resistance of the carbon nanotube is 500 to 600 ° C. and using soda lime glass (softening point of about 500 ° C.) as the substrate glass, the sintering temperature of the inorganic powder is preferably 500 ° C. or less, and 450 ° C. More preferred are: By using the inorganic powder having the sintering temperature, it is possible to suppress burning of the carbon nanotubes and to use an inexpensive substrate glass such as soda lime glass. Specific examples of such inorganic powders include metal powders such as silver, copper, nickel, alloys, and solder, glass powders, or a mixture thereof. Glass powder is preferably used in the paste for electron emission source of the present invention because the metal powder may promote the burning of carbon nanotubes by catalytic action.
- the glass softening point representing the sintering temperature of the glass powder varies depending on the glass composition, it can be controlled by selecting the glass composition.
- the glass powder contained in the electron emission source paste of the present invention Bi 2 O 3 glass, alkali glass, SnO—P 2 O 5 glass, SnO—B 2 O 3 glass and the like are preferably used.
- Use of the glass powder is preferable because the glass softening point can be controlled in the range of 300 ° C to 450 ° C.
- the ratio of the electron emission material (A) contained in the electron emission source paste to the inorganic powder is preferably 200 to 8000 parts by weight of the inorganic powder with respect to 100 parts by weight of the electron emission material. If it is 200 parts by weight or more, sufficient adhesiveness can be obtained, and if it is 8000 parts by weight or less, the electron emission source paste has an appropriate viscosity.
- the average particle size of the inorganic powder is preferably 2.0 ⁇ m or less, and more preferably 1.0 ⁇ m or less.
- the average particle diameter of the inorganic powder is 2.0 ⁇ m or less, it is possible to obtain the formability of a fine electron emission source pattern and the adhesion between the electron emission source and the cathode electrode.
- the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
- the electron emission source paste of the present invention preferably contains conductive particles.
- the paste for the electron emission source contains conductive particles, the resistance value inside the electron emission source is lowered, and the electron emission from the electron emission source can be performed at a lower voltage.
- the conductive particles are not particularly limited as long as they are conductive, but are preferably particles containing a conductive oxide, or particles in which a conductive material is coated on part or all of the oxide surface. . This is because metal has high catalytic activity and may deteriorate the electron-emitting material when the temperature becomes high due to firing or electron emission.
- the conductive oxide indium tin oxide (ITO), tin oxide, zinc oxide and the like are preferable.
- the conductive material is preferably a conductive oxide such as ITO, tin oxide, or zinc oxide.
- the content thereof is preferably 0.1 to 100 parts by weight of conductive particles with respect to 1.0 part by weight of the electron emission material. More preferably, it is ⁇ 50 parts by weight.
- the content of the conductive particles is within the above range, it is particularly preferable because the electrical contact between the electron emission material and the cathode electrode becomes better.
- the average particle size of the conductive particles is preferably from 0.1 to 1.0 ⁇ m, more preferably from 0.1 to 0.6 ⁇ m. If the average particle size of the conductive particles is within the above range, the uniformity of the resistance value inside the electron emission source is good and further the surface flatness is obtained, so that uniform electron emission from the surface can be achieved at a low voltage. Obtainable.
- the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
- the electron emission source paste of the present invention can contain an organic binder, a solvent, and a dispersant in order to impart pattern forming performance by a general printing method such as screen printing or inkjet coating.
- additives such as plasticizers, thickeners, antioxidants, organic or inorganic precipitation inhibitors and leveling agents may be included to improve paste characteristics.
- photosensitivity is imparted by including a resin having an ethylenically unsaturated group, a photocurable monomer, a photopolymerization initiator, an ultraviolet absorber, a polymerization inhibitor, a sensitizer, and the like. can do.
- Organic binders include cellulose resins (ethyl cellulose, methyl cellulose, nitrocellulose, acetyl cellulose, cellulose propionate, hydroxypropyl cellulose, butyl cellulose, benzyl cellulose, modified cellulose, etc.), acrylic resins (acrylic acid, methacrylic acid, methyl Acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, isopropyl acrylate, isopropyl methacrylate, n-butyl acrylate, n-butyl methacrylate, tert-butyl acrylate, tert-butyl methacrylate, 2-hydroxyethyl acrylate, 2 -Hydroxyethyl methacrylate, 2-hydroxypropylene Relate, 2-hydroxypropyl methacrylate, benzyl acrylate, benzyl methacrylate,
- the solvent is preferably a solvent that dissolves an organic component such as a binder resin.
- a solvent that dissolves an organic component such as a binder resin.
- polyhydric alcohols such as diol and triol typified by ethylene glycol and glycerin, compounds obtained by etherification and / or esterification of alcohol (ethylene glycol monoalkyl ether, ethylene glycol dialkyl ether, ethylene glycol alkyl ether acetate, diethylene glycol monoacetate) Alkyl ether acetate, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol dialkyl ether, propylene glycol alkyl ether acetate) and the like.
- terpineol ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, ethylene glycol dipropyl ether, diethylene glycol dibutyl ether, methyl cellosolve acetate , Ethyl cellosolve acetate, propyl cellosolve acetate, butyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2,2,4-trimethyl-1,3-pentanediol monoisobutylene DOO, organic solvent mixture containing one or more of such or these butyl carbitol acetate is used.
- the method for producing the paste for an electron emission source of the present invention includes an electron emission material, a pyrolytic foaming agent, a component that generates shrinkage stress during thermal decomposition, and further, if necessary, an inorganic powder, an organic binder, a dispersant, a solvent, etc. Are added to the desired composition, and then uniformly dispersed using a kneading machine such as a ball mill, a planetary ball mill, a bead mill, an ultra apex mill, a mixer, a three-roller, a homogenizer, or ultrasonic waves. It is done.
- a kneading machine such as a ball mill, a planetary ball mill, a bead mill, an ultra apex mill, a mixer, a three-roller, a homogenizer, or ultrasonic waves. It is done.
- the paste viscosity is adjusted depending on the addition ratio of glass powder, thickener, solvent, plasticizer, suspending agent, and the like, but the viscosity range required for the paste varies depending on the printing technique, so the paste viscosity is adjusted as appropriate.
- the viscosity is preferably 2 to 200 Pa ⁇ s.
- the viscosity is preferably 0.001 to 5 Pa ⁇ s.
- an electron emission source and an electron emission device manufacturing method using the electron emission source paste of the present invention will be described. Note that other known methods may be used for manufacturing the electron-emitting source and the electron-emitting device, and the method is not limited to the manufacturing method described later.
- the electron emission source can be obtained by forming a pattern using the electron emission source paste of the present invention on a substrate and then baking it.
- an electron emission source pattern is formed on a substrate using the electron emission source paste of the present invention.
- the substrate any substrate that fixes the electron emission source may be used, and examples thereof include a glass substrate, a ceramic substrate, a metal substrate, and a film substrate.
- a conductive film is preferably formed on the substrate.
- a printing method such as a general screen printing method or an ink jet method is preferably used.
- the electron emission source paste imparted with the photosensitivity of the present invention is printed on the substrate by a screen printing method or a slit die coater, and then dried by a hot air dryer to form a coating film of the electron emission source paste.
- the coating film may be irradiated with ultraviolet rays through a photomask from the upper surface (electron emission source paste side), and then developed with an alkali developer or an organic developer to form an electron emission source pattern.
- the pattern of the electron emission source is baked. The firing is performed in air or an inert gas atmosphere such as nitrogen, and the firing temperature is 400 to 500 ° C.
- the electron-emitting device can be obtained by forming an electron emission source made of the paste for an electron emission source of the present invention on a cathode electrode to produce a back plate, and facing an anode electrode and a front plate having a phosphor. .
- a method for manufacturing a diode-type electron-emitting device and a method for manufacturing a triode-type electron-emitting device will be described in detail.
- a cathode electrode is formed on a glass substrate.
- a conductive film such as ITO or chromium can be formed on the glass substrate by sputtering or the like.
- an electron emission source is prepared by the above-described method using the electron emission source paste of the present invention, and a back plate for a diode-type electron emission element is obtained.
- an anode electrode is formed on the glass substrate.
- a transparent conductive film such as ITO can be formed on the glass substrate by sputtering or the like.
- a phosphor is printed on the anode electrode formed on the glass substrate to obtain a front plate of the diode-type electron-emitting device.
- the back plate and front plate for the diode-type electron-emitting device are bonded together with a spacer so that the electron emission source and the phosphor face each other, and evacuated by an exhaust pipe connected to the container, so that the internal vacuum degree is 1 ⁇
- a diode-type electron-emitting device can be obtained by fusing in a state of 10 ⁇ 3 Pa or less.
- In order to confirm the electron emission state by supplying a voltage of 1 to 5 kV to the anode electrode, electrons are emitted from the carbon nanotubes and collide with the phosphor, whereby the phosphor can emit light.
- a cathode electrode is produced on a glass substrate.
- a conductive film such as ITO or chromium can be formed by sputtering or the like.
- an insulating layer is formed on the cathode electrode.
- the insulating layer can be formed with an insulating material having a thickness of about 3 to 20 ⁇ m by a printing method or a vacuum evaporation method.
- a gate electrode layer is formed over the insulating layer.
- the gate electrode layer can be obtained by forming a conductive film such as chromium by a vacuum deposition method or the like.
- an emitter hole is formed in the insulating layer.
- the emitter hole is formed by first applying a resist material on the gate electrode by a spin coater method, drying, irradiating ultraviolet rays through a photomask, transferring the pattern, and then developing with an alkali developer or the like. By etching the gate electrode and the insulating layer from the portion opened by development, an emitter hole can be formed in the insulating layer. Next, an electron emission source is produced in the emitter hole by using the electron emission source paste of the present invention by the above-described method, and a back plate for a triode type electron emission device is obtained. Next, an anode electrode is formed on the glass substrate. As the anode electrode, a transparent conductive film such as ITO can be formed on the glass substrate by sputtering or the like.
- a phosphor is printed on the anode electrode formed on the glass substrate to obtain a front plate of the triode type electron-emitting device.
- the back plate and the front plate for the triode type electron-emitting device are bonded together with a spacer so that the electron emission source and the phosphor face each other, and evacuated by an exhaust pipe connected to the container.
- a diode-type electron-emitting device can be obtained by fusing in a state of 0 ⁇ 10 ⁇ 3 Pa or less.
- An electron emission source produced using the paste for an electron emission source of the present invention can be obtained by, for example, an energy dispersive X-ray analyzer (EMAXAENERGY EX-250) combined with a scanning electron microscope (S-4800). Its composition can be analyzed.
- an electron emission source is observed using a scanning electron microscope, so that, for example, an electron-emitting material having a fiber-like structure, a particle-like conductive property, and the like from the shape of each component.
- the glass component as a functional oxide and a matrix can be generally specified.
- elemental analysis of each component can be performed and the composition can be specified.
- the analysis of the electron emission source may be any method as long as the composition of the electron emission source can be specified, and is not limited to these methods.
- the following electron emission source can be produced.
- Such an electron emission source having cracks formed at a high density even though it is minute as described above is an electron emission source capable of achieving both high resolution and good electron emission characteristics when used as a device.
- the planar shape of the electron emission source is not particularly limited, but is square, rectangular, parallelogram, trapezoid, circle, triangle, quadrangle, ellipse, sector, regular n-gon (n is 5 or more) in terms of good emission uniformity. Integers) or shapes according to them are preferably used.
- the minimum length of the electron emission source is obtained by the following method. First, when the electron emission source is viewed from a direction substantially perpendicular to the substrate, it is considered to be a plane figure substantially parallel to the substrate. At this time, the center of gravity of the electron emission source is determined in accordance with a method for obtaining the center of gravity of a general plane figure. Further, a straight line is selected so that the distance between two points where the straight line passing through the center of gravity and the plane figure of the electron emission source intersect is the shortest. The length between the intersections at that time is defined as the shortest length of the electron emission source.
- the minimum length of the electron emission source required by this method is equal to the length of one side when the plane figure is square, equal to the length of the short side when rectangular, and equal to the length of diameter when circular. .
- the shortest length of the electron emission source is preferably 1.0 mm or less, more preferably 0.5 mm or less, and further preferably 0.3 mm or less. When the minimum length of the electron emission source is within the above range, a device with higher resolution can be obtained.
- the ratio of cracks in the electron emission source is obtained by the following method.
- the area where cracks occupy the area of the entire plane figure is expressed as a percentage (%) as the “ratio of cracks in the electron emission source”.
- a plane figure of an electron emission source is taken in as image data of a scanning electron microscope or an optical microscope, and is calculated using general image processing software, for example, MATLAB (manufactured by MathWorks). Can do.
- the ratio of cracks in the electron emission source is preferably 10% or more, more preferably 15% or more, and further preferably 20% or more. When the ratio of the crack portion in the electron emission source is within the above range, an electron emission source having a low voltage required for electron emission and excellent light emission uniformity can be obtained.
- the electron emission materials, inorganic powders and organic components used in the examples and comparative examples, and the evaluation methods of the evaluation items in the examples and comparative examples are as follows.
- Carbon nanotube 1 Double-walled carbon nanotube (manufactured by Shenzhen Nanotechport)
- Carbon nanotube 2 Multi-walled carbon nanotube (manufactured by Toray Industries, Inc.).
- Component (B) ⁇ Pyrolytic foaming agent> Thermal Decomposable Foaming Agent 1: Azodicarbonamide Decomposition temperature 200 ° C. (Sankyo Kasei Co., Ltd. 'Cermic C121', average particle size 12 ⁇ m) Thermal decomposition type foaming agent 2: Dinitrosopentamethylenetetramine Decomposition temperature 205 ° C. (Sankyo Kasei Co., Ltd., “Cermic A” was subjected to dry centrifugal classification with Nisshin Engineering Co., Ltd.
- Thermal decomposable foaming agent 3 p, p'-oxybis (benzenesulfonylhydrazide) Decomposition temperature 160 ° C (Sankyo Kasei Co., Ltd. 'Cermic S', average particle size 13 ⁇ m) Pyrolytic foaming agent 1 with an average particle size of 1.0 ⁇ m (Sankyo Kasei Co., Ltd. 'Cermic C-2' was subjected to dry centrifugal classification with Nisshin Engineering Co., Ltd.
- Metal carbonate 1 basic magnesium carbonate, heavy (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 250 ° C, 400 ° C)
- Metal carbonate 2 Sodium carbonate decahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 200 ° C.)
- Metal carbonate 3 Sodium hydrogen carbonate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 300 ° C.)
- Metal nitrate Magnesium nitrate hexahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 400 ° C)
- Metal sulfate Magnesium sulfate heptahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 200 ° C)
- Metal hydroxide salt Magnesium hydroxide (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 350 ° C)
- Thermal polymerization initiator 1 t-butyl peroxylaurate 10 hours half-life temperature 98 ° C
- Thermal polymerization initiator 2 t-ethylperoxy-2-ethylhexanoate 10 hours half-life temperature 72 ° C
- Thermal polymerization initiator 3 Dibenzoyl peroxide 10 hours half-life temperature 74 ° C.
- Ethylenically unsaturated group-containing compound 1 Tetrapropylene glycol dimethacrylate
- Ethylenically unsaturated group-containing compound 2 Cyclohexyl acrylate
- Ethylenically unsaturated group-containing compound 3 n-butyl acrylate
- Ethylenically unsaturated group-containing thermal polymerization initiator 1 bis (2-methyl-2-propenyl) peroxydicarbonate 10 hours half-life temperature 39 ° C
- Ethylenically unsaturated group-containing thermal polymerization initiator 2 diallyl peroxydicarbonate 10 hours half-life temperature 39 ° C
- Ethylenically unsaturated group-containing thermal polymerization initiator 3 bis (2-methyl-2-propenyloxyethylperoxy) dicarbonate 10 hours half-life temperature 44 ° C.
- Component (D) ⁇ Pyrolytic foaming agent and ethylenically unsaturated group-containing thermal polymerization initiator> 2,2′-Azobis [N- (2-propenyl) -2-methylpropionamide] 10 hour half-life temperature 96 ° C.
- Glass powder SnO—P 2 O 5 glass “KF9079” (manufactured by Asahi Glass Co., Ltd.), softening point 340 ° C., average particle size 0.2 ⁇ m
- Conductive particles White conductive powder “ET-500W” (coated with SnO 2 / Sb conductive layer using spherical titanium oxide as a core, manufactured by Ishihara Sangyo Co., Ltd.), specific surface area 6.9 m 2 / g, The density is 4.6 g / cm 3 and the average particle size is 0.2 ⁇ m.
- Polystyrene particles Megabeads NIST traceable particle size standard particles, 10.0 ⁇ m
- Solvent Terpineol (manufactured by Wako Pure Chemical Industries, Ltd.).
- Evaluation method ⁇ Observation of electron emission source surface crack width> The presence or absence of cracks on the surface of the electron emission source was confirmed using an optical microscope. Further, the electron emission source was observed with a scanning electron microscope (S4800, manufactured by Hitachi, Ltd.) at a magnification of 1,000 to 20,000, and the crack width was measured. The crack width was the widest part of the observed crack.
- a phosphor layer having a thickness of 5 ⁇ m is formed on a substrate on which an electron emission source is formed and a soda lime glass substrate on which an ITO thin film is formed (P22, Chemical Opt).
- the substrate on which the Nix Corporation was formed was opposed with a spacer of 100 ⁇ m in between, and a voltage was applied at 10 V / second by a voltage applying device (withstand voltage / insulation resistance tester TOS9201 manufactured by Kikusui Electronics Co., Ltd.). .
- the electric field strength at which the current density reached a predetermined current value was determined from the obtained current-voltage curve (maximum current value 10 mA / cm 2 ).
- the predetermined current value is a value described in each example and comparative example.
- a vacuum chamber with a degree of vacuum of 5.0 ⁇ 10 ⁇ 4 Pa a back substrate having a 1 cm ⁇ 1 cm square electron-emitting device formed on an ITO substrate, and a phosphor layer (P22) having a thickness of 5 ⁇ m on the ITO substrate.
- the front substrate on which the substrate is formed is opposed with a spacer of 100 ⁇ m, and a voltage having a predetermined current value is applied by a voltage application device (withstand voltage / insulation resistance tester TOS9201 manufactured by Kikusui Electronics Co., Ltd.)
- the front substrate was made to emit light.
- the predetermined current value is a value described in each example and comparative example.
- the light emission area was digitized by taking a light emission image with a CCD camera and measuring the proportion of light emission in a 1 cm ⁇ 1 cm square electron-emitting device. At this time, the light emission area of 80% or more is best (A), 50% or more and less than 80% is good (B), 30% or more and less than 50% is acceptable (C), and less than 30% Was not allowed (D).
- the particle diameter of the metal salt used in the electron emission source paste of the present invention was adjusted by the following method. After weighing 20 g of metal salt and 80 g of solvent in a 500 ml zirconia container, 0.3 mm ⁇ zirconia beads (Torayserum (trade name) manufactured by Toray Industries, Inc.) are added thereto, and a planetary ball mill (Fritsch Japan Co., Ltd.) is added. It was pulverized with a planetary ball mill P-5). The pulverized solution from which zirconia beads were removed was dried to obtain a metal salt having an average particle diameter of 1 to 3 ⁇ m.
- Torayserum trade name
- a planetary ball mill Fritsch Japan Co., Ltd.
- Example 1 Double-walled carbon nanotubes were pulverized by a ball mill using zirconia balls having a diameter of 3 mm, and an organic binder, solvent, glass powder, conductive particles, residual compound, and pyrolytic foaming agent were added at a composition ratio shown in Table 1. The mixture was kneaded with three rollers to prepare an electron emission source paste.
- a cathode electrode was formed by depositing ITO on a glass substrate by sputtering.
- a 1 cm ⁇ 1 cm square coating film was printed on the cathode electrode by a screen printing method using a SUS200 mesh screen plate, and then dried at 100 ° C. for 5 minutes in a hot air dryer.
- the obtained paste film for electron emission source was baked at 450 ° C. in the atmosphere to obtain an electron emission source.
- the resulting electron emission source had a crack width of 10.5 ⁇ m and a carbon nanotube protrusion length of 2.9 ⁇ m.
- the electric field intensity reaching 1 mA / cm 2 was 3.5 V / ⁇ m, and the light emission area at that time was 82%.
- Examples 2 to 16 As in Example 1, electron emission source pastes and electron emission sources having the composition ratios shown in Tables 1 and 2 were produced. Tables 1 and 2 show the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field intensity reaching 1 mA / cm 2 , and the emission area. Examples 2 to 10 were obtained by changing the type of the residual compound, Examples 11 and 12 were obtained by changing the type of the pyrolytic foaming agent, and Examples 13 and 14 were obtained by changing the content of the residual compound. Examples 15 and 16 use a plurality of residual compounds.
- Double-walled carbon nanotubes are pulverized by a ball mill using zirconia balls having a diameter of 3 mm, and an organic binder, a solvent, glass powder, conductive particles, and a pyrolytic foaming agent are added at a composition ratio shown in Table 3 to form a three-roller. And kneaded to prepare an electron emission source paste.
- a cathode electrode was formed by depositing ITO on a glass substrate by sputtering.
- a 1 cm ⁇ 1 cm square coating film was printed on the cathode electrode by a screen printing method using a SUS200 mesh screen plate, and then dried at 100 ° C. for 5 minutes in a hot air dryer.
- the obtained paste film for electron emission source was baked at 450 ° C. in the atmosphere to obtain an electron emission source. Cracks in the obtained electron emission source and protrusions of carbon nanotubes were not observed.
- the electric field intensity reaching 1 mA / cm 2 exceeded 15 V / ⁇ m, and the light emission area at that time was 3%.
- Comparative Examples 2-5 Similarly to Comparative Example 1, an electron emission source paste and an electron emission source having the composition ratio shown in Table 3 were produced. Table 3 shows the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field strength reaching 1 mA / cm 2 , and the light emitting area. In Comparative Examples 2 to 4, only the residual compound was used without adding the pyrolytic foaming agent, and the width of the crack was small and the protruding length of the carbon nanotube was short. The electric field strength reaching 1 mA / cm 2 was high, and the uniformity of light emission was not very good. In Comparative Example 5, polystyrene particles were added, and voids in which holes were continuously connected were formed in the electron emission source.
- the crack width of Comparative Example 5 is a measurement of the width of the gap. Although the width of the apparent crack was large, the protruding length of the carbon nanotube was short. The electric field strength reaching 1 mA / cm 2 was high, and the uniformity of light emission was not very good.
- Example 17 The electron emission source paste was prepared as follows. After weighing 1 g of multi-walled carbon nanotubes, 8 g of glass powder, 6 g of conductive particles, 20 g of binder, and 65 g of solvent in a zirconia container having a capacity of 500 ml, 0.3 mm ⁇ zirconia beads (Traceram (trade name) manufactured by Toray Industries, Inc.) In addition, it was predispersed at 100 rpm with a planetary ball mill (planet type ball mill P-5 manufactured by Fritsch Japan KK). The mixture from which the zirconia beads were removed was kneaded with three rollers.
- a planetary ball mill planet type ball mill P-5 manufactured by Fritsch Japan KK
- the thermal decomposition type foaming agent 1, the thermal polymerization initiator 1 and the ethylenically unsaturated group-containing compound 1 are added so that the composition ratio shown in Table 4 is obtained, and the mixture is further kneaded with three rollers, and an electron emission source is obtained.
- a paste was used. These were adjusted to 6 wt% in the electron emission source paste.
- the produced electron emission source paste was printed on a soda lime glass substrate on which an ITO thin film was formed using a SUS325 mesh screen so as to form a 5 mm ⁇ 5 mm square pattern. After drying at 100 ° C. for 10 minutes, an electron emission source was obtained by firing at 450 ° C. in the air.
- Examples 18-23 In the same manner as in Example 17, an electron emission source paste and an electron emission source having the composition ratios shown in Table 4 were prepared and evaluated.
- (B) a thermally decomposable foaming agent, (C) component thermal polymerization initiator and ethylenically unsaturated group-containing compound were used.
- (B) a thermally decomposable foaming agent and (C) component ethylenically unsaturated group-containing thermal polymerization initiator were used.
- the thermal decomposition initiator / ethylenically unsaturated group-containing thermal polymerization initiator as component (D) was used. The total content of these in the electron emission source paste was 6 wt%.
- Examples 24-38 In the same manner as in Example 17, an electron emission source paste and an electron emission source having the composition ratios shown in Tables 5 to 7 were prepared and evaluated.
- (B) a thermal decomposition type foaming agent, (C) component thermal polymerization initiator, ethylenically unsaturated group-containing compound and residual compound were used.
- (B) a thermally decomposable foaming agent and (C) component ethylenically unsaturated group-containing thermal polymerization initiator and residual compound were used.
- the residual compound as component (C) and the thermal decomposable foaming agent and ethylenically unsaturated group-containing thermal polymerization initiator as component (D) were used.
- the components other than the residual compounds were combined so that the content in the electron emission source paste was 6 wt%. Further, the residual compound was added so that the content in the paste was 9 wt%. In both cases, cracks on the surface of the electron emission source and carbon nanotubes having a protrusion length of 0.5 ⁇ m or more from the crack surface were observed, and electron emission could be observed without an activation step.
- the evaluation results of the electric field intensity and the light emission uniformity are as shown in Tables 5 to 7.
- the electron emission source paste was prepared as follows. After weighing 1 g of multi-walled carbon nanotubes, 8 g of glass powder, 6 g of conductive particles, 20 g of binder, and 65 g of solvent in a zirconia container having a capacity of 500 ml, 0.3 mm ⁇ zirconia beads (Traceram (trade name) manufactured by Toray Industries, Inc.) In addition, it was predispersed at 100 rpm with a planetary ball mill (planet type ball mill P-5 manufactured by Fritsch Japan KK). The mixture from which the zirconia beads were removed was kneaded with three rollers.
- the pyrolytic foaming agent 1 was added so that the content in the paste for electron emission source was 6 wt%, and further kneaded by three rollers to obtain an electron emission source paste.
- the produced electron emission source paste was printed on a soda lime glass substrate on which an ITO thin film was formed using a SUS325 mesh screen so as to form a 5 mm ⁇ 5 mm square pattern. After drying at 100 ° C. for 10 minutes, an electron emission source was obtained by firing at 450 ° C. in the air. On the surface of the obtained electron emission source, only carbon nanotubes in which the protruding length of the carbon nanotubes protruding from the wall surface of the void was less than 0.1 ⁇ m were observed. The electric field strength reaching 0.1 mA / cm 2 was 12.5 V / ⁇ m.
- Comparative Examples 7-10 In the same manner as in Comparative Example 6, an electron emission source paste and an electron emission source having the composition ratios shown in Table 8 were prepared and evaluated. In Comparative Examples 7 to 10, neither (B) a pyrolytic foaming agent nor (D) a thermal polymerization initiator having an ethylenically unsaturated group functioning as a pyrolytic foaming agent was used.
- Examples 39-49 Similarly to Example 1, electron emission source pastes and electron emission sources having the composition ratios shown in Tables 9 to 10 were produced. Tables 9 to 10 show the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field intensity reaching 1 mA / cm 2 , and the light emitting area. Examples 39 to 43 were obtained by changing the content of the (B) pyrolytic foaming agent and the residual compound (C), and Examples 44 to 45 were obtained by changing the type of the component (C). Examples 46 to 49 are obtained by changing the average particle size of (B) pyrolytic foaming agent particles.
- Example 50 The electron emission source paste used in Example 42 was printed on a soda-lime glass substrate on which an ITO thin film was formed, using a SUS325 mesh screen plate to print a fine pattern of 200 ⁇ m ⁇ 1000 ⁇ m. After drying at 100 ° C. for 10 minutes, an electron emission source was obtained by firing at 450 ° C. in the air.
- FIG. 6 shows a photograph of the obtained electron emission source observed by SEM at a magnification of 500 times from a direction substantially perpendicular to the substrate. The ratio of cracks in the electron emission source corresponding to 200 ⁇ m ⁇ 200 ⁇ m was calculated from the photograph using MATLAB, and found to be 12.6%.
- the electric field strength reaching 1 mA / cm 2 was 1.7 V / ⁇ m, and good electron emission characteristics could be obtained even in a fine pattern.
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Abstract
Description
本発明は、電子放出源用ペースト、これを用いた電子放出源および電子放出素子ならびにこれらの製造方法に関する。 The present invention relates to an electron emission source paste, an electron emission source and an electron emission element using the paste, and a method of manufacturing the same.
カーボンナノチューブ、カーボンナノファイバー、カーボンナノホーン、カーボンナノコイル、カーボンナノウォールなどに代表される炭素系材料は物理的・化学的耐久性に優れているだけでなく、電界放出に適した先鋭な先端形状と大きなアスペクト比を持っている。そのため、炭素系材料を電子放出源とした電界放出型ディスプレイ(FED)、電界放出を用いた液晶用バックライトユニット(LCD-BLU)、照明機器、X線源等の様々な応用研究が盛んに行われている。 Carbon-based materials such as carbon nanotubes, carbon nanofibers, carbon nanohorns, carbon nanocoils, and carbon nanowalls are not only excellent in physical and chemical durability, but also have sharp tip shapes suitable for field emission. And has a large aspect ratio. Therefore, various applied researches such as field emission displays (FED) using carbon-based materials as electron emission sources, liquid crystal backlight units (LCD-BLU) using field emission, lighting equipment, X-ray sources, etc. are prosperous. Has been done.
炭素系材料を用いた電子放出源の作製方法の一つに、炭素系材料(例えばカーボンナノチューブ)をペースト化し、カソード基板に塗布する方法がある。この方法は、一例として、カソード電極上にカーボンナノチューブ含有ペーストを塗膜形成し、熱処理した後、膜表面に、テープ剥離法、レーザー照射法等の活性化処理を行うものである。この方法に用いられるペースト材料としては、カーボンナノチューブ含有ペーストにガラス粉末を含むもの(例えば、特許文献1参照)、炭酸塩を含むもの(例えば、特許文献2参照)、または金属炭酸塩を含むもの(例えば、特許文献3参照)などが知られている。また、バインダー樹脂を用いるペーストにあっては、焼成によりバインダー樹脂が除去される。そのため、残渣が残りにくいよう、比較的低温で加熱消滅性の材料を利用する技術も提案されている(例えば、特許文献4参照)。 One method for producing an electron emission source using a carbon-based material is to paste a carbon-based material (for example, carbon nanotube) and apply it to a cathode substrate. In this method, as an example, a carbon nanotube-containing paste is formed on a cathode electrode, heat-treated, and then subjected to an activation treatment such as a tape peeling method or a laser irradiation method on the film surface. The paste material used in this method includes a carbon nanotube-containing paste containing glass powder (for example, see Patent Document 1), a carbonate-containing paste (for example, see Patent Document 2), or a metal carbonate-containing paste. (For example, refer to Patent Document 3). Moreover, in the paste using binder resin, binder resin is removed by baking. For this reason, a technique using a heat extinguisher material at a relatively low temperature has been proposed so that the residue does not easily remain (see, for example, Patent Document 4).
ところで、上記工程のうち活性化処理は、良好な電子放出特性を得るために、電子放出源の表面にカーボンナノチューブを起毛させるなどして露出させるものである。しかし、活性化処理を省くことができれば、さらなるコスト低減に大きく寄与することができる。起毛処理を行わなくても良好な電子放出特性が得られるものとして、多孔性の電子放出源であって、その孔壁から電子放出材料が突出したものが提案されている(例えば、特許文献5参照)。この電子放出源は、カーボンナノチューブ含有ペーストにポリメタクリル酸メチルなどのプラスチック粒子を混入し、熱処理工程でプラスチック粒子を燃焼させ、それが存在していた領域に空隙をつくることで連続孔を形成したものである。孔壁からカーボンナノチューブが突出しているため、活性化処理が不要である。 By the way, in the above process, the activation treatment is to expose the carbon nanotubes on the surface of the electron emission source in order to obtain good electron emission characteristics. However, if the activation process can be omitted, it can greatly contribute to further cost reduction. A porous electron emission source in which an electron emission material protrudes from the pore wall has been proposed as a material capable of obtaining good electron emission characteristics without performing brushing treatment (for example, Patent Document 5). reference). In this electron emission source, plastic particles such as polymethyl methacrylate are mixed in a carbon nanotube-containing paste, and the plastic particles are burned in a heat treatment process to form voids in the regions where the particles existed, thereby forming continuous holes. Is. Since the carbon nanotube protrudes from the hole wall, the activation process is unnecessary.
しかし、特許文献5に記載の方法では、電子放出に必要な電圧が増加してしまうという課題があった。また、発光均一性が良好でないという課題もあった。
However, the method described in
本発明は、上記課題に着目し、電子放出源表面にカーボンナノチューブを露出させる活性化処理工程を省くことができるとともに、低電圧で電子放出可能で、均一な発光が得られる電子放出源用ペーストおよびこれを用いた電子放出源を提供することを目的とする。 The present invention pays attention to the above-mentioned problems, eliminates the activation treatment step of exposing the carbon nanotubes on the surface of the electron emission source, and enables the emission of electrons at a low voltage so that uniform emission can be obtained. It is another object of the present invention to provide an electron emission source using the same.
すなわち、本発明は(A)電子放出材料、(B)熱分解型発泡剤、および(C)熱分解時に収縮応力を発生する成分を含む電子放出源用ペーストである。また、本発明の別の態様は、(A)電子放出材料、および(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を有する熱重合開始剤、を含む電子放出源用ペーストである。 That is, the present invention is an electron emission source paste containing (A) an electron emission material, (B) a pyrolytic foaming agent, and (C) a component that generates shrinkage stress during thermal decomposition. Another aspect of the present invention is for an electron emission source comprising (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group. It is a paste.
本発明によれば、電子放出源表面にカーボンナノチューブを露出させる活性化処理工程を省くことができるため、電子放出源の製造における活性化処理工程に必要な装置、材料等のコストの削減が可能である。また、本発明によれば、活性化処理が不要であるにもかかわらず、低電圧で電子放出可能で、均一な発光が得られる電子放出源を得ることができる。 According to the present invention, it is possible to omit the activation process step of exposing the carbon nanotubes on the surface of the electron emission source, so that it is possible to reduce the cost of equipment, materials, etc. required for the activation process step in the manufacture of the electron emission source. It is. Further, according to the present invention, it is possible to obtain an electron emission source capable of emitting electrons at a low voltage and obtaining uniform light emission even though activation processing is unnecessary.
本発明の電子放出源用ペーストは、(A)電子放出材料、(B)熱分解型発泡剤、および(C)熱分解時に収縮応力を発生する成分を含むものである。また、本発明の電子放出源用ペーストの別の態様は、(A)電子放出材料、および(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を有する熱重合開始剤、を含むものである。また、本発明は、これを用いて得られる電子放出源および電子放出素子ならびにそれらの製造方法に関するものである。本発明の電子放出源用ペーストを用いれば、テープ剥離法、レーザー照射法等の活性化処理を行うことなしに、低電圧で電子放出可能で、カソード電極との接着性にも優れ、均一な発光が得られる電子放出源を得ることができる。 The electron emission source paste of the present invention contains (A) an electron emission material, (B) a pyrolytic foaming agent, and (C) a component that generates shrinkage stress during thermal decomposition. Another embodiment of the paste for an electron emission source according to the present invention includes (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group, Is included. The present invention also relates to an electron emission source and an electron emission device obtained by using the same, and a method for manufacturing them. By using the paste for an electron emission source of the present invention, it is possible to emit electrons at a low voltage without performing an activation treatment such as a tape peeling method or a laser irradiation method, excellent adhesion to the cathode electrode, and uniform. An electron emission source capable of emitting light can be obtained.
活性化処理を行うことなしに低電圧で電子放出可能な理由は、次のように推定される。なお、以下の説明では(A)電子放出材料としてカーボンナノチューブを例に挙げるが、後述のように、電子放出材料はこれに限られず、他の材料についても同様にあてはまる。 The reason why electrons can be emitted at a low voltage without performing the activation process is estimated as follows. In the following description, carbon nanotubes are taken as an example of (A) the electron emission material. However, as will be described later, the electron emission material is not limited to this, and the same applies to other materials.
本発明の電子放出源用ペーストを基板上に塗布し、熱処理して得られる電子放出源を観察すると、電子放出源に亀裂が生じ、カーボンナノチューブが亀裂から突出していることが分かった。従って、活性化処理をしなくても、亀裂から突出したカーボンナノチューブから電子放出を得ることができるものと考えられる。しかも、亀裂が生じる過程で、電子放出源内部に亀裂によって生じた断面(亀裂面)に略垂直方向にカーボンナノチューブが引き出される力が働くと考えられる。そのため、カーボンナノチューブの突出長さが長くなり、アスペクト比が大きくなる。その結果、カーボンナノチューブに電界集中が起こりやすく、電子放出に必要な電圧を低く保つことができる。実用レベルでの低電圧で電子放出するためには、亀裂面からのカーボンナノチューブの突出長さが0.5μm以上であることが好ましく、1.0μm以上であることがより好ましく、3.0μm以上であることがより好ましく、4.0μm以上であることがより好ましく、5.0μm以上であることがさらに好ましい。本発明の電子放出源用ペーストを用いればこれを達成することができる。突出したカーボンナノチューブの長さが、ゲート電極やアノード電極と接触して短絡することのない長さであれば、カーボンナノチューブの突出長さは長ければ長いほど電子放出に必要な電圧を低く保つことができる。突出したカーボンナノチューブが亀裂間を架橋するように存在するものもあるが、そのようなものが含まれていてもよい。 When the electron emission source obtained by applying the electron emission source paste of the present invention on the substrate and heat-treating was observed, it was found that the electron emission source was cracked and the carbon nanotubes protruded from the crack. Therefore, it is considered that the electron emission can be obtained from the carbon nanotube protruding from the crack without performing the activation treatment. In addition, it is considered that in the process of generating cracks, a force that pulls out the carbon nanotubes in a direction substantially perpendicular to the cross section (crack surface) generated by the cracks inside the electron emission source works. Therefore, the protruding length of the carbon nanotube is increased and the aspect ratio is increased. As a result, electric field concentration is likely to occur in the carbon nanotube, and the voltage required for electron emission can be kept low. In order to emit electrons at a low voltage at a practical level, the protruding length of the carbon nanotube from the crack surface is preferably 0.5 μm or more, more preferably 1.0 μm or more, and 3.0 μm or more. Is more preferably 4.0 μm or more, and further preferably 5.0 μm or more. This can be achieved by using the paste for electron emission source of the present invention. If the length of the protruding carbon nanotube is such that it does not short-circuit with the gate electrode or anode electrode, the longer the protruding length of the carbon nanotube, the lower the voltage required for electron emission. Can do. Some projecting carbon nanotubes exist so as to bridge between cracks, but such ones may be included.
亀裂の発生には(B)熱分解型発泡剤が大きく寄与していると考えられる。本明細書において熱分解型発泡剤とは、熱分解して気体を放出し、電子放出源用ペースト塗膜内に気泡を生じる物質のことである。この気泡が亀裂の起点になることで多くの亀裂が生じやすくなっていると考えられる。亀裂の数が増えると露出する電子放出材料が増えるため、発光均一性が向上する。 It is considered that (B) pyrolytic foaming agent contributes greatly to the occurrence of cracks. In the present specification, the pyrolytic foaming agent is a substance that thermally decomposes to release a gas and generate bubbles in the paste film for the electron emission source. It is considered that many cracks are likely to be generated by the bubbles being the starting point of cracks. As the number of cracks increases, the exposed electron emission material increases, so that the light emission uniformity is improved.
また、前記亀裂の発生には(C)熱分解時に収縮応力を発生する成分も大きく寄与していると考えられる。(C)成分の影響により熱分解時に電子放出源に大きな収縮応力がかかると、発生した亀裂が成長するものと考えられる。 In addition, it is considered that (C) a component that generates shrinkage stress during thermal decomposition contributes greatly to the generation of the crack. It is considered that when a large shrinkage stress is applied to the electron emission source during the thermal decomposition due to the influence of the component (C), the generated crack grows.
(C)熱分解時に収縮応力を発生する成分の一例として、例えば金属塩、有機金属化合物、金属錯体、シランカップリング剤またはチタンカップリング剤といった化合物が挙げられる。これらは、加熱によって分解する。しかし、これらは前記特許文献5に記載のプラスチック粒子のように燃焼や分解によって全て焼失するものではなく、金属酸化物やケイ素化合物として最終的に残留する特徴を持つ。本明細書の以下の説明では、(C)成分のうちペースト焼成温度に加熱しても完全には消失しない特徴を持つ物質を総称して「残留性化合物」と呼ぶ。この残留性化合物は熱分解時に収縮するため、電子放出源用ペースト塗膜内に収縮応力が生じ、焼成後の電子放出源内に亀裂を作ることができる。この収縮応力が大きいために、亀裂の幅が大きくなると電子放出源内に突出長さの長いカーボンナノチューブを得ることができ、電子放出に必要な電圧が低くなる。
(C) Examples of components that generate shrinkage stress during thermal decomposition include compounds such as metal salts, organometallic compounds, metal complexes, silane coupling agents, and titanium coupling agents. These are decomposed by heating. However, they are not completely burned down by combustion or decomposition like the plastic particles described in
また、(C)熱分解時に収縮応力を発生する成分の別の例として、熱重合開始剤とエチレン性不飽和基を含有する化合物を組み合わせた成分も挙げることができる。熱重合開始剤は、加熱によって分解してラジカルを発生し、エチレン性不飽和基含有化合物の二重結合部分を架橋させるのに用いられる。二重結合部分が架橋されることによって、熱分解時に電子放出源に大きな収縮応力がかかる。その際、電子放出源に欠陥があると、そこを起点として亀裂が発生し、成長するものと考えられる。この結果、前記「残留性化合物」と同様に電子放出に必要な電圧を低くできる。 Also, as another example of the component (C) that generates shrinkage stress during thermal decomposition, a component combining a thermal polymerization initiator and a compound containing an ethylenically unsaturated group can be cited. The thermal polymerization initiator is decomposed by heating to generate radicals, and is used to crosslink the double bond portion of the ethylenically unsaturated group-containing compound. When the double bond portion is cross-linked, a large shrinkage stress is applied to the electron emission source during thermal decomposition. At that time, if there is a defect in the electron emission source, it is considered that a crack is generated starting from the defect and grows. As a result, the voltage required for electron emission can be lowered similarly to the “residual compound”.
ところで、これらの成分は、電子放出源用ペーストの焼成後には分解・消失しているものと考えられる。このように、(C)成分のうちペースト焼成温度に加熱すると消失する物質を総称して「消失性亀裂発生剤」と呼ぶ。なお、消失性亀裂発生剤の具体例はこれらに限られず、同様の性質を示すものであればよい。 By the way, it is considered that these components are decomposed and disappeared after the firing of the electron emission source paste. Thus, among the component (C), substances that disappear when heated to the paste firing temperature are collectively referred to as “disappearing crack generating agents”. In addition, the specific example of a vanishing crack generating agent is not restricted to these, What is necessary is just to show the same property.
また、上記の各成分は、1つの物質で気体の放出、架橋の促進、エチレン性不飽和基含有、のうちの複数の性質を備えていてもよい。そうすることによって、混合する物質の種類を減らし、系を単純にすることができる。 In addition, each of the above components may be provided with a plurality of properties of gas release, cross-linking promotion, and ethylenically unsaturated group content with one substance. By doing so, the types of substances to be mixed can be reduced and the system can be simplified.
具体的に、(C)熱分解時に収縮応力を発生する成分の別の態様として、エチレン性不飽和基を含有する熱重合開始剤が挙げられる。これも消失性亀裂発生剤に含まれる。また、(B)成分と(C)成分を別々に用いる代わりに、(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を含有する熱重合開始剤を用いる場合が挙げられる。これらの場合も、各ペースト中に前記3つの要素が含まれているため、同様の効果が得られる。なお、(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を含有する熱重合開始剤とは、エチレン性不飽和基を含有する熱重合開始剤であって、(B)熱分解型発泡剤としての役割を兼ね備えるものである。 Specifically, as another embodiment of the component (C) that generates shrinkage stress during thermal decomposition, a thermal polymerization initiator containing an ethylenically unsaturated group can be mentioned. This is also included in the vanishing cracking agent. In addition, instead of using the component (B) and the component (C) separately, there is a case where a thermal polymerization initiator that functions as a thermal decomposition type foaming agent (D) and contains an ethylenically unsaturated group is used. . In these cases, the same effect can be obtained because the three elements are included in each paste. Note that (D) a thermal polymerization initiator that functions as a thermally decomposable foaming agent and contains an ethylenically unsaturated group is a thermal polymerization initiator that contains an ethylenically unsaturated group, and (B) It also serves as a pyrolytic foaming agent.
なお、消失性亀裂発生剤のさらに別の例として、熱分解型発泡剤と熱重合開始剤の性質を兼ねる物質と、エチレン性不飽和基含有化合物とを用いる場合や、エチレン性不飽和基を含有する熱分解型発泡剤と、熱重合開始剤とを用いる場合も挙げられる。これらは熱分解型発泡剤の役割が備わっているため、(B)成分とともに用いてもよいし、(B)成分を省略してもよい。 In addition, as another example of the disappearing crack generating agent, when using a substance that doubles as a pyrolytic foaming agent and a thermal polymerization initiator and an ethylenically unsaturated group-containing compound, or an ethylenically unsaturated group The case where the thermal decomposition type foaming agent and thermal polymerization initiator to contain are also mentioned. Since these have the role of a pyrolytic foaming agent, they may be used together with the component (B) or the component (B) may be omitted.
その他、(C)熱分解時に収縮応力を発生する成分にはシロキサン材料またはシリコーン材料なども含まれる。 Other components (C) that generate shrinkage stress during thermal decomposition include siloxane materials and silicone materials.
(C)成分は、電子放出源用ペーストの焼成温度以下で収縮応力を発生するものであることが好ましい。一般的なディスプレイや照明などの発光デバイス用途では、基板として安価なソーダライムガラスを用いるため、(C)成分は100℃以上500℃以下の温度で収縮応力を発生するものであることが好ましい。なお、下限としては150℃以上がより好ましく、200℃以上がさらに好ましい。また、上限としては450℃以下がより好ましく、400℃以下がさらに好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。(C)成分が収縮応力を発生する温度が前記範囲内にあると、熱分解型発泡剤によって生じた起点との相乗効果によって、良好な亀裂を形成することができる。上述の消失性亀裂発生剤は、電子放出源用ペーストの焼成後には消失しているものであるから、前記範囲内の温度で収縮応力を発生する成分に該当する。残留性化合物についての詳細は後述する。 The component (C) preferably generates a shrinkage stress below the firing temperature of the electron emission source paste. In a light emitting device application such as a general display or illumination, since inexpensive soda lime glass is used as a substrate, the component (C) preferably generates a shrinkage stress at a temperature of 100 ° C. or more and 500 ° C. or less. In addition, as a minimum, 150 degreeC or more is more preferable, and 200 degreeC or more is further more preferable. Moreover, as an upper limit, 450 degrees C or less is more preferable, and 400 degrees C or less is further more preferable. Any preferred lower limit can be combined with any preferred upper limit. When the temperature at which the component (C) generates contraction stress is within the above range, good cracks can be formed by a synergistic effect with the starting point generated by the pyrolytic foaming agent. Since the above-mentioned disappearing crack generating agent disappears after the firing of the electron emission source paste, it corresponds to a component that generates shrinkage stress at a temperature within the above range. Details of the residual compound will be described later.
なお、本明細書において、ある成分が例えば100℃以上500℃以下の温度で収縮応力を発生するとは、以下の条件を満たすことをいう。まず、その成分についてTGA(Thermogravimetric Analysis)による熱重量分析を、不活性ガス雰囲気中、昇温速度が10℃/minという条件で行う。その結果得られるTGA曲線の傾きが負に変化する点をその成分の熱分解温度とする。そして、熱分解温度以降の、傾きが負である温度領域が100℃以上500℃以下の範囲に含まれていれば、その成分は100℃以上500℃以下の温度で収縮応力を発生するものである。熱分解温度以降のTGA曲線の傾きが負であるとき、つまり重量が減少しているときは、その材料が熱分解し続けていることを表すからである。 In this specification, that a certain component generates shrinkage stress at a temperature of, for example, 100 ° C. or more and 500 ° C. or less means that the following condition is satisfied. First, thermogravimetric analysis by TGA (Thermogravimetric Analysis) is performed on the components in an inert gas atmosphere at a temperature rising rate of 10 ° C./min. The point at which the slope of the TGA curve obtained as a result changes negatively is defined as the thermal decomposition temperature of the component. And if the temperature range after the thermal decomposition temperature where the slope is negative is included in the range of 100 ° C. or more and 500 ° C. or less, the component generates shrinkage stress at a temperature of 100 ° C. or more and 500 ° C. or less. is there. This is because when the slope of the TGA curve after the thermal decomposition temperature is negative, that is, when the weight is reduced, it indicates that the material continues to undergo thermal decomposition.
また、(C)成分として「残留性化合物」または「消失性亀裂発生剤」のいずれを用いた場合も、最終的に電子放出源内に有機残渣がほとんど残らず、良好な電子放出特性を得ることができるため好ましい。 In addition, in the case where either “residual compound” or “disappearing crack generator” is used as the component (C), finally, there is almost no organic residue remaining in the electron emission source, and good electron emission characteristics are obtained. Is preferable.
以上のように、本発明においては、熱分解型発泡剤による気泡発生と、残留性化合物や消失性亀裂発生剤による収縮応力の発生が、熱処理工程において段階的にもしくは同時並行的に起こり、亀裂の発生と成長が促進されているものと推測される。 As described above, in the present invention, the generation of bubbles due to the pyrolytic foaming agent and the generation of shrinkage stress due to the residual compound or the extinguishing cracking agent occur stepwise or concurrently in the heat treatment process, and cracks occur. It is estimated that the generation and growth of
上記の中でも、本発明の電子放出源用ペーストのより好ましい態様は以下のものである。 Among the above, more preferable embodiments of the paste for an electron emission source of the present invention are as follows.
(I)(A)電子放出材料、(B)熱分解型発泡剤、および(C)成分として金属塩、有機金属化合物、金属錯体、シランカップリング剤およびチタンカップリング剤からなる群から選ばれる少なくとも1種以上の物質を含む電子放出源用ペースト。 (I) selected from the group consisting of (A) an electron emitting material, (B) a pyrolytic foaming agent, and (C) a metal salt, an organometallic compound, a metal complex, a silane coupling agent, and a titanium coupling agent. An electron emission source paste containing at least one substance.
(II)(A)電子放出材料、(B)熱分解型発泡剤、および(C)成分として熱重合開始剤およびエチレン性不飽和基含有化合物を含む電子放出源用ペースト。 (II) (A) An electron emission material, (B) a pyrolytic foaming agent, and (C) a paste for an electron emission source containing a thermal polymerization initiator and an ethylenically unsaturated group-containing compound as components.
(III)(A)電子放出材料、(B)熱分解型発泡剤、および(C)成分としてエチレン性不飽和基を含有する熱重合開始剤を含む電子放出源用ペースト。 (III) (A) an electron emission material, (B) a pyrolytic foaming agent, and (C) an electron emission source paste containing a thermal polymerization initiator containing an ethylenically unsaturated group as a component.
(IV)(A)電子放出材料、および(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を有する熱重合開始剤、を含む電子放出源用ペースト。 (IV) An electron emission source paste containing (A) an electron emission material, and (D) a thermal polymerization initiator that functions as a pyrolytic foaming agent and has an ethylenically unsaturated group.
一方、前記特許文献5に記載のようにプラスチック粒子で形成する連続孔の孔壁からカーボンナノチューブを突出させる場合には、プラスチック粒子の焼失による収縮応力は弱いため、カーボンナノチューブの突出長さが短くなり、アスペクト比が小さくなる。その結果、カーボンナノチューブの先端に電界集中が起こりにくく、電子放出に必要な電圧が増加してしまう。
On the other hand, when carbon nanotubes are projected from the wall of a continuous hole formed of plastic particles as described in
本発明の電子放出源の亀裂とは、図1に示すように電子放出源にできた裂け目のことで、幅が0.5μm以上のものをいう。また、亀裂の幅とは、図1の符号3で示すように、電子放出源の表面部分における裂け目の幅を測定したものをいう。亀裂の深さはカソード基板に達してもよいし、達していなくてもよい。
The crack of the electron emission source of the present invention refers to a rift formed in the electron emission source as shown in FIG. 1 and having a width of 0.5 μm or more. The width of the crack means a measurement of the width of the crack in the surface portion of the electron emission source, as indicated by
一例として、残留性化合物として塩基性炭酸マグネシウム、熱分解型発泡剤としてアゾジカルボンアミドを用いた電子放出源表面の亀裂の電子顕微鏡写真を図2に、亀裂面から突出したカーボンナノチューブの電子顕微鏡写真を図3に示す。また、消失性亀裂発生剤としてt-ブチルパーオキシラウレートとテトラプロピレングリコールジメタクリレート、熱分解型発泡剤としてアゾジカルボンアミドを用いた電子放出源表面の亀裂の光学顕微鏡写真を図4に、亀裂面から突出したカーボンナノチューブの電子顕微鏡写真を図5に示す。 As an example, FIG. 2 shows an electron micrograph of a crack on the surface of an electron emission source using basic magnesium carbonate as a residual compound and azodicarbonamide as a pyrolytic foaming agent, and an electron micrograph of a carbon nanotube protruding from the crack surface. Is shown in FIG. In addition, Fig. 4 shows an optical micrograph of a crack on the surface of an electron emission source using t-butyl peroxylaurate and tetrapropylene glycol dimethacrylate as a disappearing crack generator and azodicarbonamide as a pyrolytic foaming agent. An electron micrograph of the carbon nanotube protruding from the surface is shown in FIG.
以下に、本発明の電子放出源用ペーストについてさらに詳細に説明する。 Hereinafter, the paste for an electron emission source of the present invention will be described in more detail.
一般に、電界放出型ディスプレイなどに用いられる(A)電子放出材料には、モリブデンに代表される金属材料や、カーボンナノチューブ、カーボンナノファイバー、カーボンナノホーン、カーボンナノコイル、カーボンナノツイストといった針状炭素、ダイアモンド、ダイアモンドライクカーボン、グラファイト、カーボンブラック、フラーレン、グラフェンに代表される炭素系材料がある。本発明では、これらのいずれも使用することができるが、低い仕事関数特性によって低電圧駆動が可能であることから針状炭素を用いることが好ましい。針状炭素の中でもカーボンナノチューブは高アスペクト比であるために良好な電気放出特性を持つことからより好ましい。以下、針状炭素の代表としてカーボンナノチューブを用いた電子放出源用ペーストについて一例として述べる。 In general, (A) electron emission materials used in field emission displays and the like include metal materials typified by molybdenum, acicular carbon such as carbon nanotubes, carbon nanofibers, carbon nanohorns, carbon nanocoils, and carbon nanotwists, There are carbon-based materials represented by diamond, diamond-like carbon, graphite, carbon black, fullerene, and graphene. In the present invention, any of these can be used, but it is preferable to use acicular carbon because low voltage driving is possible due to low work function characteristics. Among the acicular carbons, carbon nanotubes are more preferable because of their high aspect ratio and good electrical emission characteristics. Hereinafter, an electron emission source paste using carbon nanotubes as representative of acicular carbon will be described as an example.
カーボンナノチューブには単層のもの、または2層、3層等の多層のものがあり、いずれも好ましく用いられる。層数の異なるカーボンナノチューブの混合物を用いてもよい。未精製カーボンナノチューブ粉末はアモルファスカーボンや触媒金属等の不純物を含むことがあるため、酸処理などの精製を行うことによって純度を高めて使用することもできる。また、カーボンナノチューブの長さを調整するため、超音波、ボールミルやビーズミル等でカーボンナノチューブ粉末を粉砕してもよい。 Carbon nanotubes may be single-walled or multi-walled, such as two or three, and any of them is preferably used. A mixture of carbon nanotubes having different numbers of layers may be used. Since the unpurified carbon nanotube powder may contain impurities such as amorphous carbon and catalytic metal, it can be used with increased purity by performing purification such as acid treatment. Further, in order to adjust the length of the carbon nanotube, the carbon nanotube powder may be pulverized by an ultrasonic wave, a ball mill, a bead mill or the like.
電子放出源用ペースト全体に対する(A)電子放出材料の含有量は0.1~20重量%が好ましい。また0.1~10重量%であることがより好ましく、0.1~5.0重量%であることがさらに好ましい。電子放出材料の含有量が前記範囲内であると、電子放出源用ペーストの良好な分散性、印刷性およびパターン形成性が得られる。 The content of the (A) electron-emitting material with respect to the whole electron-emitting source paste is preferably 0.1 to 20% by weight. Further, it is more preferably 0.1 to 10% by weight, and further preferably 0.1 to 5.0% by weight. When the content of the electron emission material is within the above range, good dispersibility, printability, and pattern formability of the electron emission source paste can be obtained.
(B)熱分解型発泡剤は、50~300℃の範囲で分解して気体を放出するものが好ましく、100~250℃で分解して気体を放出するものがより好ましく、150~250℃で分解して気体を放出するものがさらに好ましい。前記温度範囲で気体を発生するものを用いることで、電子放出源用ペースト塗膜の作製時の乾燥工程では気泡が発生することなく、亀裂形成時の熱処理工程において十分に亀裂を生じさせることができる。なお、本明細書において、例えば50~300℃の範囲で分解するとは、前記のTGA測定により得られる熱分解温度が50~300℃の範囲にあることをいう。 (B) The pyrolytic foaming agent is preferably one that decomposes in the range of 50 to 300 ° C. to release gas, more preferably one that decomposes at 100 to 250 ° C. to release gas, and 150 to 250 ° C. What decomposes | disassembles and discharge | releases gas is still more preferable. By using a material that generates gas in the above temperature range, bubbles are not generated in the drying process when preparing the paste coating film for the electron emission source, and sufficient cracks can be generated in the heat treatment process during crack formation. it can. In this specification, for example, decomposing in the range of 50 to 300 ° C. means that the thermal decomposition temperature obtained by the TGA measurement is in the range of 50 to 300 ° C.
(B)熱分解型発泡剤の具体例は、アゾジカルボンアミド、アゾビスイソブチロニトリル等のアゾ化合物、ジニトロソペンタメチレンテトラミン、N,N’-ジニトロソ-N,N’-ジメチルテレフタルアミド等のニトロソ化合物、p-トルエンスルホニルヒドラジド、p,p’-オキシビス(ベンゼンスルホニルヒドラジド)、ヒドラゾジカルボンアミド等のヒドラジド化合物、p-トルエンスルホニルアジド等のアジド化合物、アセトン-p-スルホニルヒドラゾン等のヒドラゾン化合物、メラミン、尿素、ジシアンアミド等などが挙げられるが、これらに限定されるものではない。これらの中でもアゾ化合物、ニトロソ化合物、ヒドラジド化合物を用いた場合は、電子放出源用ペースト塗膜の作製時の乾燥工程では気泡が発生することなく、熱分解時の気体放出量も多いことから、亀裂形成時の熱処理工程において十分に亀裂を生じさせる効果が大きいため特に好ましい。 (B) Specific examples of the thermal decomposition type foaming agent include azo compounds such as azodicarbonamide and azobisisobutyronitrile, dinitrosopentamethylenetetramine, N, N′-dinitroso-N, N′-dimethylterephthalamide and the like. Nitroso compounds, p-toluenesulfonyl hydrazide, hydrazide compounds such as p, p'-oxybis (benzenesulfonylhydrazide), hydrazodicarbonamide, azide compounds such as p-toluenesulfonyl azide, hydrazones such as acetone-p-sulfonylhydrazone Compounds, melamine, urea, dicyanamide and the like can be mentioned, but are not limited thereto. Among these, when an azo compound, a nitroso compound, or a hydrazide compound is used, air bubbles are not generated in the drying process during the preparation of the paste film for the electron emission source, and the amount of gas released during thermal decomposition is large. This is particularly preferable because the effect of causing sufficient cracks in the heat treatment process during crack formation is great.
(B)熱分解型発泡剤は、電子放出源用ペースト中において粒子として存在すると、亀裂形成を促進することができるため好ましい。そのような熱分解型発泡剤粒子は、平均粒径が、下限としては1.0μm以上であることが好ましく、3.0μm以上であることがより好ましく、6.0μm以上であることがさらに好ましい。また、上限としては、25μm以下であることが好ましく、20μm以下であることがより好ましく、15μm以下であることがさらに好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。熱分解型発泡剤粒子の平均粒径が前記の下限値以上であると、亀裂形成をより促進し、電子放出に必要な電圧を低くすることができる。また、前記の上限値以下であると、電子放出源の表面凹凸を少なくして均一に亀裂を形成できるために良好な発光均一性を得ることができる。 (B) The thermal decomposable foaming agent is preferably present as particles in the electron emission source paste because it can promote crack formation. Such thermally decomposable foaming agent particles preferably have an average particle size of 1.0 μm or more as a lower limit, more preferably 3.0 μm or more, and even more preferably 6.0 μm or more. . Moreover, as an upper limit, it is preferable that it is 25 micrometers or less, It is more preferable that it is 20 micrometers or less, It is further more preferable that it is 15 micrometers or less. Any preferred lower limit can be combined with any preferred upper limit. When the average particle size of the thermally decomposable foaming agent particles is not less than the above lower limit value, crack formation can be further promoted and the voltage required for electron emission can be lowered. Moreover, since it is less than the said upper limit and the surface unevenness | corrugation of an electron emission source can be reduced and a crack can be formed uniformly, favorable light emission uniformity can be obtained.
ここで平均粒径とは、累積50%粒径(D50)のことをさす。これは一つの粉体の集団の全体積を100%として体積累積カーブを求めたとき、その体積累積カーブが50%となる点の粒径を表したものであり、累積平均径として一般的に粒度分布を評価するパラメータの1つとして利用されているものである。なお、熱分解型発泡剤粒子の粒度分布の測定はマイクロトラック法(日機装(株)製マイクロトラックレーザー回折式粒度分布測定装置による方法)で測定することができる。 Here, the average particle diameter refers to a cumulative 50% particle diameter (D 50 ). This represents the particle size at which the volume cumulative curve is 50% when the volume cumulative curve is determined with the total volume of one powder group as 100%. This is used as one of the parameters for evaluating the particle size distribution. The particle size distribution of the pyrolyzable foaming agent particles can be measured by a microtrack method (a method using a microtrack laser diffraction type particle size distribution measuring device manufactured by Nikkiso Co., Ltd.).
電子放出源用ペースト全体に対する(B)熱分解型発泡剤の含有量は、下限としては1.0重量%以上であることが好ましく、2.0重量%以上であることがより好ましく、3.0重量%以上であることがより好ましく、5.0重量%以上であることがより好ましく、10重量%以上であることがさらに好ましい。また、上限としては、30重量%以下であることが好ましく、25重量%以下であることがより好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。また、電子放出源用ペーストから溶剤を除いた固形分全体に対する熱分解型発泡剤の含有量は、下限としては1.0重量%以上であることが好ましく、3.0重量%であることがより好ましく、5.0重量%以上であることがより好ましく、10重量%以上であることがさらに好ましい。また、上限としては、50重量%以下であることが好ましく、40重量%以下であることがより好ましく、35重量%以下であることがさらに好ましい。熱分解型発泡剤の含有量が前記範囲内であると、電子放出源塗膜内に均一な気泡を形成することができる。 2. The content of the (B) pyrolytic foaming agent with respect to the whole paste for electron emission source is preferably 1.0% by weight or more, more preferably 2.0% by weight or more as a lower limit. It is more preferably 0% by weight or more, more preferably 5.0% by weight or more, and further preferably 10% by weight or more. Moreover, as an upper limit, it is preferable that it is 30 weight% or less, and it is more preferable that it is 25 weight% or less. Any preferred lower limit can be combined with any preferred upper limit. Further, the content of the pyrolyzable foaming agent with respect to the entire solid content excluding the solvent from the electron emission source paste is preferably 1.0% by weight or more as a lower limit, and preferably 3.0% by weight. More preferably, it is 5.0% by weight or more, more preferably 10% by weight or more. Moreover, as an upper limit, it is preferable that it is 50 weight% or less, It is more preferable that it is 40 weight% or less, It is further more preferable that it is 35 weight% or less. When the content of the pyrolytic foaming agent is within the above range, uniform bubbles can be formed in the electron emission source coating film.
(C)熱分解時に収縮応力を発生する成分の一例である、残留性化合物の具体例について説明する。なお、残留性化合物は種類によって熱分解温度が異なるため、使用する温度に合った化合物を適宜選択することが好ましい。 (C) A specific example of a residual compound, which is an example of a component that generates shrinkage stress during thermal decomposition, will be described. In addition, since a thermal decomposition temperature changes with kinds of a residual compound, it is preferable to select the compound suitable for the temperature to be used suitably.
金属塩とは、炭酸塩、硫酸塩、硝酸塩、水酸化物塩、炭酸水素塩、酢酸塩、ハロゲン化物塩等を指す。金属炭酸塩としては、例えば炭酸カリウム、炭酸カルシウム、炭酸ナトリウム、炭酸バリウム、炭酸マグネシウム、炭酸リチウム、炭酸銅(II)、炭酸鉄(II)、炭酸銀(I)、炭酸ニッケル、ハイドロタルサイト等を用いることができる。金属硫酸塩としては、例えば硫酸亜鉛、硫酸アルミニウム、硫酸カリウム、硫酸カルシウム、硫酸銀、硫酸水素カリウム、硫酸タリウム、硫酸鉄(II)、硫酸鉄(III)、硫酸銅(I)、硫酸銅(II)、硫酸ナトリウム、硫酸ニッケル、硫酸バリウム、硫酸マグネシウム、カリミョウバン、鉄ミョウバンなどのミョウバン類等を挙げることができる。金属硝酸塩としては、硝酸マグネシウム、硝酸亜鉛、硝酸アルミニウム、硝酸ウラニル、硝酸塩素、硝酸カリウム、硝酸カルシウム、硝酸銀、硝酸グアニジン、硝酸コバルト、硝酸コバルト(II)、硝酸コバルト(III)、硝酸セシウム、硝酸セリウムアンモニウム、硝酸鉄、硝酸鉄(II)、硝酸鉄(III)、硝酸銅(II)、硝酸ナトリウム、硝酸鉛(II)、硝酸バリウム、硝酸ルビジウム等を挙げることができる。金属水酸化物塩としては、水酸化カルシウム、水酸化マグネシウム、水酸化マンガン、水酸化鉄(II)、水酸化亜鉛、水酸化銅(II)、水酸化ランタン、水酸化アルミニウム、水酸化鉄(III)等を挙げることができる。金属炭酸水素塩としては、例えば炭酸水素ナトリウム、炭酸水素カリウム、炭酸水素カルシウム等を挙げることができる。金属ハロゲン化物塩はアルカリ金属、アルカリ土類金属等の金属と、フッ素、塩素、臭素、ヨウ素等のハロゲン間で形成される塩を示し、例えば、フッ化ナトリウム、フッ化カリウム、フッ化カルシウム、フッ化リチウム、塩化ナトリウム、塩化カリウム、塩化マグネシウム、塩化カルシウム、臭化リチウム、臭化ナトリウム、臭化カリウム、ヨウ化カリウム、ヨウ化ナトリウム等を挙げることができる。金属酢酸塩としては、酢酸ナトリウム、酢酸カリウム、酢酸カルシウム、酢酸マグネシウム等が挙げられる。これら金属塩は無水物または水和物のいずれも用いることができる。 Metal salts refer to carbonates, sulfates, nitrates, hydroxide salts, bicarbonates, acetates, halide salts and the like. Examples of the metal carbonate include potassium carbonate, calcium carbonate, sodium carbonate, barium carbonate, magnesium carbonate, lithium carbonate, copper carbonate (II), iron carbonate (II), silver carbonate (I), nickel carbonate, hydrotalcite and the like. Can be used. Examples of the metal sulfate include zinc sulfate, aluminum sulfate, potassium sulfate, calcium sulfate, silver sulfate, potassium hydrogen sulfate, thallium sulfate, iron (II) sulfate, iron (III) sulfate, copper (I) sulfate, copper sulfate ( II), alums such as sodium sulfate, nickel sulfate, barium sulfate, magnesium sulfate, potassium alum and iron alum. Metal nitrates include magnesium nitrate, zinc nitrate, aluminum nitrate, uranyl nitrate, chlorine nitrate, potassium nitrate, calcium nitrate, silver nitrate, guanidine nitrate, cobalt nitrate, cobalt nitrate (II), cobalt nitrate (III), cesium nitrate, cerium nitrate Ammonium, iron nitrate, iron nitrate (II), iron nitrate (III), copper nitrate (II), sodium nitrate, lead nitrate (II), barium nitrate, rubidium nitrate and the like can be mentioned. Metal hydroxide salts include calcium hydroxide, magnesium hydroxide, manganese hydroxide, iron hydroxide (II), zinc hydroxide, copper hydroxide (II), lanthanum hydroxide, aluminum hydroxide, iron hydroxide ( III). Examples of the metal hydrogen carbonate include sodium hydrogen carbonate, potassium hydrogen carbonate, and calcium hydrogen carbonate. Metal halide salts are salts formed between metals such as alkali metals and alkaline earth metals and halogens such as fluorine, chlorine, bromine and iodine. For example, sodium fluoride, potassium fluoride, calcium fluoride, Examples include lithium fluoride, sodium chloride, potassium chloride, magnesium chloride, calcium chloride, lithium bromide, sodium bromide, potassium bromide, potassium iodide, and sodium iodide. Examples of the metal acetate include sodium acetate, potassium acetate, calcium acetate, magnesium acetate and the like. These metal salts can be used either as anhydrides or hydrates.
有機金属化合物としては、金属-炭素結合を有する化合物が挙げられる。有機金属化合物を構成する金属元素としては錫(Sn)、インジウム(In)、アンチモン(Sb)、亜鉛(Zn)、金(Au)、銀(Ag)、銅(Cu)、パラジウム(Pd)、アルミニウム(Al)、チタン(Ti)、ニッケル(Ni)、白金(Pt)、マンガン(Mn)、鉄(Fe)、コバルト(Co)、クロム(Cr)、ジルコニウム(Zn)などが挙げられる。また、金属元素と結合して有機金属化合物を形成する有機鎖に含まれる基としてはアセチル基、アルキル基、アルコキシ基、アミノ基、アミド基、エステル基、エーテル基、エポキシ基、フェニル基、ハロゲン基などがある。前記有機金属化合物の具体例としては、トリメチルインジウム、トリエチルインジウム、トリブトキシインジウム、トリメトキシインジウム、トリエトキシインジウム、テトラメチル錫、テトラエチル錫、テトラブチル錫、テトラメトキシ錫、テトラエトキシ錫、テトラブトキシ錫、テトラフェニル錫、トリフェニルアンチモン、トリフェニルアンチモンジアセテート、トリフェニルアンチモンオキサイド、トリフェニルアンチモンハロゲン化物などが挙げられる。 Examples of the organometallic compound include compounds having a metal-carbon bond. As metal elements constituting the organometallic compound, tin (Sn), indium (In), antimony (Sb), zinc (Zn), gold (Au), silver (Ag), copper (Cu), palladium (Pd), Examples include aluminum (Al), titanium (Ti), nickel (Ni), platinum (Pt), manganese (Mn), iron (Fe), cobalt (Co), chromium (Cr), and zirconium (Zn). In addition, groups included in the organic chain that forms an organometallic compound by combining with a metal element include acetyl group, alkyl group, alkoxy group, amino group, amide group, ester group, ether group, epoxy group, phenyl group, halogen There are groups. Specific examples of the organometallic compound include trimethylindium, triethylindium, tributoxyindium, trimethoxyindium, triethoxyindium, tetramethyltin, tetraethyltin, tetrabutyltin, tetramethoxytin, tetraethoxytin, tetrabutoxytin, Examples thereof include tetraphenyltin, triphenylantimony, triphenylantimony diacetate, triphenylantimony oxide, and triphenylantimony halide.
金属錯体としては、有機金属化合物で挙げた金属元素を中心として周囲に配位子が配位した構造を有するものが挙げられる。金属錯体を形成する配位子としては、アミノ基、ホスフィノ基、カルボキシル基、カルボニル基、チオール基、ヒドロキシル基、エーテル基、エステル基、アミド基、シアノ基、ハロゲン基、チオシアノ基、ピリジル基、フェナントリル基などの孤立電子対を有するものが挙げられる。前記配位子の具体例としては、トリフェニルホスフィン、硝酸イオン、ハロゲン化物イオン、水酸化物イオン、シアン化物イオン、チオシアンイオン、アンモニア、一酸化炭素、アセチルアセトネート、ピリジン、エチレンジアミン、ビピリジン、フェナントロリン、BINAP、カテコラート、ターピリジン、エチレンジアミン四酢酸、ポルフィリン、サイクラム、クラウンエーテル類などが挙げられる。金属錯体の具体例としては、インジウムアセチルアセトネート錯体、インジウムエチレンジアミン錯体、インジウムエチレンジアミン四酢酸錯体、錫アセチルアセトネート錯体、錫エチレンジアミン錯体、錫エチレンジアミン四酢酸などが挙げられる。 Examples of the metal complex include those having a structure in which a ligand is coordinated around the metal element mentioned in the organometallic compound. Examples of ligands that form metal complexes include amino groups, phosphino groups, carboxyl groups, carbonyl groups, thiol groups, hydroxyl groups, ether groups, ester groups, amide groups, cyano groups, halogen groups, thiocyano groups, pyridyl groups, Those having a lone pair of electrons such as a phenanthryl group. Specific examples of the ligand include triphenylphosphine, nitrate ion, halide ion, hydroxide ion, cyanide ion, thiocyan ion, ammonia, carbon monoxide, acetylacetonate, pyridine, ethylenediamine, bipyridine, phenanthroline. , BINAP, catecholate, terpyridine, ethylenediaminetetraacetic acid, porphyrin, cyclam, crown ethers and the like. Specific examples of the metal complex include an indium acetylacetonate complex, an indium ethylenediamine complex, an indium ethylenediaminetetraacetic acid complex, a tin acetylacetonate complex, a tin ethylenediamine complex, and a tin ethylenediaminetetraacetic acid.
シランカップリング剤としては、アルコキシ基、ハロゲン、アセトキシ基などの加水分解性のシリル基を持つものが挙げられる。通常アルコキシ基、特にメトキシ基やエトキシ基が好ましく用いられる。また、シランカップリング剤が有する有機官能基としては、アミノ基、メタクリル基、アクリル基、ビニル基、エポキシ基、メルカプト基、アルキル基、アリル基などを挙げることができる。具体的にはN-β(アミノエチル)γ-アミノプロピルトリメトキシシラン、N-β(アミノエチル)γ-アミノプロピルメチルジメトキシシラン、N-フェニル-γ-アミノプロピルトリメトキシシラン、γ-アミノプロピルトリメトキシシラン、γ-ジブチルアミノプロピルトリメトキシシラン、γ-ウレイドプロピルトリエトキシシラン、N-β-(N-ビニルベンジルアミノメチル)-γ-アミノプロピルトリメトキシシラン・塩酸塩、γ-メタクリロキシプロピルトリメトキシシラン、γ-メタクリロキシプロピルトリエトキシシラン、γ-メタクリロキシプロピルメチルジメトキシシラン、ビニルトリメトキシシラン、ビニルトリエトキシシラン、ビニルトリアセトキシシラン、ビニルトリクロルシラン、ビニルトリス(β-メトキシエトキシ)シラン、γ-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジエトキシシラン、β-(3,4-エポキシシクロへキシル)エチルトリメトキシシラン、γ-メルカプトプロピルトリメトキシシラン、γ-クロロプロピルトリメトキシシラン、メチルトリメトキシシラン、メチルトリエトキシシラン、ジメチルジメトキシシラン、ジメチルジエトキシシラン、n-プロピルトリメトキシシラン、イソブチルトリメトキシシラン、n-へキシルトリメトキシシラン、n-デシルトリメトキシシラン、n-ヘキサデシルトリメトキシシラン、フェニルトリメトキシシラン、ジフェニルジメトキシシランなどを挙げることができる。本発明ではこれらのカップリング剤から選んだ1種類を単独で使用しても良いし、2種類以上を組み合わせて使用しても良い。また、上記カップリング剤1種を用いた自己縮合物や、2種以上を組み合わせた異種縮合物を使用してもよい。
Examples of the silane coupling agent include those having hydrolyzable silyl groups such as alkoxy groups, halogens, and acetoxy groups. Usually, an alkoxy group, particularly a methoxy group or an ethoxy group is preferably used. Moreover, as an organic functional group which a silane coupling agent has, an amino group, a methacryl group, an acrylic group, a vinyl group, an epoxy group, a mercapto group, an alkyl group, an allyl group, etc. can be mentioned. Specifically, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropylmethyldimethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-aminopropyl Trimethoxysilane, γ-dibutylaminopropyltrimethoxysilane, γ-ureidopropyltriethoxysilane, N-β- (N-vinylbenzylaminomethyl) -γ-aminopropyltrimethoxysilane hydrochloride, γ-methacryloxypropyl Trimethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, vinyltrichlorosilane, vinyltris (β-methoxyeth Xy) silane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-chloropropyltrimethoxysilane, methyltrimethoxysilane, methyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, n-propyltrimethoxysilane, isobutyltrimethoxysilane, n-hexyltrimethoxysilane, n-decyl Examples include trimethoxysilane, n-hexadecyltrimethoxysilane, phenyltrimethoxysilane, and diphenyldimethoxysilane. In the present invention, one kind selected from these coupling agents may be used alone, or two or more kinds may be used in combination. Moreover, you may use the self-condensate using the said
チタンカップリング剤としては、シランカップリング剤のシラン部分をチタンに置き換えたものを挙げることができる。 Examples of the titanium coupling agent include those obtained by replacing the silane portion of the silane coupling agent with titanium.
これらの中でも金属塩が好ましく用いられる。金属塩を含む電子放出源用ペーストを用いて得られた電子放出源は、電子放出源内に生じる亀裂サイズが大きく、カーボンナノチューブの突出長さも長い。そして、低電圧駆動が可能であり、かつ発光均一性が良好である。これは無機成分である金属塩の熱分解時に生じる収縮応力が、有機成分の熱分解時に生じる収縮応力よりも大きいためであると推定される。中でも、100~500℃の低温領域で熱分解する点で金属炭酸塩、金属硝酸塩または金属硫酸塩が好ましい。この中で、金属炭酸塩は最も亀裂が発生しやすいことからより好ましい。さらに、マグネシウムを含有する金属炭酸塩を用いると、熱分解により生成したMgOが二次電子放出材料として働き、電子放出源の低電圧駆動が可能となるから、特に好ましい。 Of these, metal salts are preferably used. An electron emission source obtained by using an electron emission source paste containing a metal salt has a large crack size generated in the electron emission source, and a carbon nanotube has a long protruding length. In addition, low voltage driving is possible and light emission uniformity is good. This is presumably because the shrinkage stress generated during the thermal decomposition of the metal salt, which is an inorganic component, is larger than the contraction stress generated during the thermal decomposition of the organic component. Of these, metal carbonates, metal nitrates or metal sulfates are preferred in that they are thermally decomposed in a low temperature range of 100 to 500 ° C. Of these, metal carbonates are more preferred because they are most susceptible to cracking. Furthermore, when a metal carbonate containing magnesium is used, MgO generated by thermal decomposition works as a secondary electron emission material, and the electron emission source can be driven at a low voltage, which is particularly preferable.
残留性化合物の平均粒径は0.5~10μmであることが好ましい。残留性化合物の平均粒径が0.5μm以上であると、熱分解時に生じる収縮応力によって亀裂を生じさせることができ、10μm以下であることでエミッタ表面凹凸を少なくして良好な発光均一性を得ることができる。ここで平均粒径とは、累積50%粒径(D50)のことをさし、熱分解型発泡剤粒子の場合と同様の方法で測定することができる。 The average particle size of the residual compound is preferably 0.5 to 10 μm. When the average particle size of the residual compound is 0.5 μm or more, cracks can be generated by the shrinkage stress generated during thermal decomposition, and when it is 10 μm or less, the emitter surface unevenness is reduced and good emission uniformity is obtained. Obtainable. Here, the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
電子放出源用ペースト全体に対する残留性化合物の含有量は、下限としては1.0重量%以上であることが好ましく、5.0重量%以上であることがより好ましく、10重量%以上であることがさらに好ましい。また、上限としては、30重量%以下であることが好ましく、25重量%以下であることがさらに好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。また、電子放出源用ペーストから溶剤を除いた固形分全体に対する残留性化合物の含有量は、下限としては1.0重量%以上であることが好ましく、5.0重量%以上であることがより好ましく、10重量%以上であることがさらに好ましい。また、上限としては、60重量%以下であることが好ましく、50重量%以下であることがより好ましく、40重量%以下であることがより好ましく、35重量%以下であることがさらに好ましい。残留性化合物の含有量が前記範囲内であると、電子放出源塗膜内に均一な亀裂を形成することができる。 The content of the residual compound with respect to the entire paste for the electron emission source is preferably 1.0% by weight or more as a lower limit, more preferably 5.0% by weight or more, and 10% by weight or more. Is more preferable. Moreover, as an upper limit, it is preferable that it is 30 weight% or less, and it is more preferable that it is 25 weight% or less. Any preferred lower limit can be combined with any preferred upper limit. Further, the content of the residual compound with respect to the entire solid content excluding the solvent from the paste for the electron emission source is preferably 1.0% by weight or more as a lower limit, and more preferably 5.0% by weight or more. Preferably, it is 10% by weight or more. Moreover, as an upper limit, it is preferable that it is 60 weight% or less, It is more preferable that it is 50 weight% or less, It is more preferable that it is 40 weight% or less, It is further more preferable that it is 35 weight% or less. When the content of the residual compound is within the above range, uniform cracks can be formed in the electron emission source coating film.
(C)熱分解時に収縮応力を発生する成分の一例である、消失性亀裂発生剤の具体例について説明する。 (C) A specific example of the vanishing cracking agent, which is an example of a component that generates shrinkage stress during thermal decomposition, will be described.
熱重合開始剤は、例えば、アゾ系では、2,2’-アゾビス(2-メチルプロピオニトリル)、2,2’-アゾビス(2-メチルブチロニトリル)、1,1’-アゾビス(シクロヘキサン-1-カルボニトリル)、1-[(1-シアノ-1-メチルエチル)アゾ]ホルムアミド(2-(カルバモイラゾ)イソブチロニトリル)、2,2’-アゾビス{2-メチル-N-[2-(1-ヒドロキシブチル)]プロピオンアミド}、2,2’-アゾビス[2-メチル-N-(2-ヒドロキシエチル)-プロピオンアミド]、2,2’-アゾビス[N-(2-プロペニル)-2-メチルプロピオンアミド]、2,2’-アゾビス(N-ブチル-2-メチルプロピオンアミド)、2,2’-アゾビス(N-シクロヘキシル-2-メチルプロピオンアミド)、2,2’-アゾビス(2,4,4-トリメチルペンタン)(アゾジ-t-オクタン)等があげられる。また、過酸化物系では、t-ブチルパーオキシピバレート、t-ヘキシルパーオキシ-2-エチルヘキサノエート、1,1-ビス(t-ブチルパーオキシ)-2-メチルシクロヘキサン、1,1-ビス(t-ヘキシルパーオキシ)-3,3,5-トリメチルシクロヘキサン、1,1-ビス(t-ヘキシルパーオキシ)シクロヘキサン、1,1-ビス(t-ブチルパーオキシ)-3,3,5-トリメチルシクロヘキサン、1,1-ビス(t-ブチルパーオキシ)シクロヘキサン、2,2-ビス(4,4-ジブチルパーオキシシクロヘキシル)プロパン、1,1-ビス(t-ブチルパーオキシ)シクロドデカン、t-ヘキシルパーオキシイソプロピルモノカーボネート、t-ブチルパーオキシマレイン酸、t-ブチルパーオキシ-3,5,5-トリメチルヘキサノエート、t-ブチルパーオキシラウレート、ジベンゾイルパーオキシド、2,5-ジメチル-2,5-ジ(m-トルオイルパーオキシ)ヘキサン、t-ブチルパーオキシイソプロピルモノカーボネート、t-ブチルパーオキシ-2-エチルヘキシルモノカーボネート、t-ヘキシルパーオキシベンゾエート、2,5-ジメチル-2,5-ジ(ベンゾイルパーオキシ)ヘキサン、t-ブチルパーオキシアセテート、2,2-ビス(t-ブチルパーオキシ)ブタン、t-ブチルパーオキシベンゾエート、n-ブチル-4,4-ビス(t-ブチルパーオキシ)バレレート、ジ-t-ブチルパーオキシイソフタレート、α,α’-ビス(t-ブチルパーオキシ)ジイソプロピルベンゼン、ジクミルパーオキサイド、2,5-ジメチル-2,5-ジ(t-ブチルパーオキシ)ヘキサン、t-ブチルクミルパーオキサイド等があげられる。 Examples of the thermal polymerization initiator include 2,2′-azobis (2-methylpropionitrile), 2,2′-azobis (2-methylbutyronitrile), 1,1′-azobis (cyclohexane) in the azo series. -1-carbonitrile), 1-[(1-cyano-1-methylethyl) azo] formamide (2- (carbamoylazo) isobutyronitrile), 2,2′-azobis {2-methyl-N- [2 -(1-hydroxybutyl)] propionamide}, 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) -propionamide], 2,2′-azobis [N- (2-propenyl) -2-methylpropionamide], 2,2′-azobis (N-butyl-2-methylpropionamide), 2,2′-azobis (N-cyclohexyl-2-methylpropionamide), 2 2'-azobis (2,4,4-trimethylpentane) (azodi -t- octane) and the like. In the case of peroxides, t-butyl peroxypivalate, t-hexyl peroxy-2-ethylhexanoate, 1,1-bis (t-butylperoxy) -2-methylcyclohexane, 1,1 -Bis (t-hexylperoxy) -3,3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy) cyclohexane, 1,1-bis (t-butylperoxy) -3,3 5-trimethylcyclohexane, 1,1-bis (t-butylperoxy) cyclohexane, 2,2-bis (4,4-dibutylperoxycyclohexyl) propane, 1,1-bis (t-butylperoxy) cyclododecane , T-hexylperoxyisopropyl monocarbonate, t-butylperoxymaleic acid, t-butylperoxy-3,5,5-to Methyl hexanoate, t-butyl peroxylaurate, dibenzoyl peroxide, 2,5-dimethyl-2,5-di (m-toluoyl peroxy) hexane, t-butyl peroxyisopropyl monocarbonate, t- Butyl peroxy-2-ethylhexyl monocarbonate, t-hexyl peroxybenzoate, 2,5-dimethyl-2,5-di (benzoylperoxy) hexane, t-butyl peroxyacetate, 2,2-bis (t- Butylperoxy) butane, t-butylperoxybenzoate, n-butyl-4,4-bis (t-butylperoxy) valerate, di-t-butylperoxyisophthalate, α, α'-bis (t- Butylperoxy) diisopropylbenzene, dicumyl peroxide, 2,5-dimethyl-2, - di (t-butylperoxy) hexane, and the like t-butyl cumyl peroxide and the like.
エチレン性不飽和基を含有する成分としては、例えば、ビニル基、アリル基、アクリロイル基、メタクリロイル基などが挙げられる。特に、アクリロイル基やメタクリロイル基を有することが好ましい。 Examples of the component containing an ethylenically unsaturated group include a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group. In particular, it preferably has an acryloyl group or a methacryloyl group.
アクリロイル基やメタクリロイル基を有する化合物の具体例として、メチルアクリレート、エチルアクリレート、n-プロピルアクリレート、イソプロピルアクリレート、n-ブチルアクリレート、sec-ブチルアクリレート、イソブチルアクリレート、tert-ブチルアクリレート、n-ペンチルアクリレート、アリルアクリレート、ベンジルアクリレート、ブトキシエチルアクリレート、ブトキシトリエチレングリコールアクリレート、シクロヘキシルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンテニルアクリレート、2-エチルヘキシルアクリレート、テトラプロピレングリコールジメタクリレートなどが挙げられる。 Specific examples of the compound having an acryloyl group or a methacryloyl group include methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-butyl acrylate, sec-butyl acrylate, isobutyl acrylate, tert-butyl acrylate, n-pentyl acrylate, Examples include allyl acrylate, benzyl acrylate, butoxyethyl acrylate, butoxytriethylene glycol acrylate, cyclohexyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate, 2-ethylhexyl acrylate, and tetrapropylene glycol dimethacrylate.
また、エチレン性不飽和基を有する成分としては、1分子内にエチレン性不飽和基を1つ有する単官能性モノマー、2つ以上有する多官能性モノマーとしては、2官能性モノマー、3官能性モノマー、4官能性モノマー、5官能性モノマー、6官能性モノマーなどが挙げられるが、熱分解性が良好な点から1官能性または2官能性モノマーを好ましく用いることができる。 The component having an ethylenically unsaturated group is a monofunctional monomer having one ethylenically unsaturated group in one molecule, and the polyfunctional monomer having two or more is a bifunctional monomer or trifunctional. Monomers, tetrafunctional monomers, pentafunctional monomers, hexafunctional monomers and the like can be mentioned, and monofunctional or bifunctional monomers can be preferably used from the viewpoint of good thermal decomposability.
単官能性モノマーの具体例としては、(メタ)アクリル酸又は(メタ)アクリル酸エステルが用いられる。具体的にはアクリル酸、メタクリル酸、イタコン酸、クロトン酸、マレイン酸、フマル酸、酢酸ビニルまたはこれらの酸無水物、メチルアクリレート、エチルアクリレート、n-プロピルアクリレート、イソプロピルアクリレート、n-ペンチルアクリレート、sec-ブチルアクリレート、イソブチルアクリレート、n-ブチルアクリレート、tert-ブチルアクリレート、2-n-ブトキシエチルアクリレート、ブトキシエチレングリコールアクリレート、ブトキシトリエチレングリコールアクリレート、2―エチルヘキシルアクリレート、グリセロールアクリレート、ヘプタデカフロロデシルアクリレート、2-ヒロドキシエチルアクリレート、2-ヒドロキシプロピルアクリレート、2-メトキシエチルアクリレート、イソデキシルアクリレート、イソオクチルアクリレート、ラウリルアクリレート、メトキシエチレングリコールアクリレート、メトキシジエチレングリコールアクリレート、オクタフロロエチルアクリレート、トリフロロエチルアクリレート、ステアリルアクリレート、ジペンタエリスリトールヘキサアクリラート、ジペンタエリスリトールモノヒドロキシペンタアクリラート、ジトリメチロールプロパンテトラアクリレート、グリセロールアクリレート、ネオペンチルグリコールアクリレート、プロピレングリコールアクリレート、アクリルアミド、アミノエチルアクリレート、スチレン、α-メチルスチレン、アリルアクリレート、ベンジルアクリレート、シクロヘキシルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンテニルアクリレートまた前記化合物の分子内のアクリレートの一部もしくは全てをメタクリレートに変えた化合物などが挙げられる。 As a specific example of the monofunctional monomer, (meth) acrylic acid or (meth) acrylic acid ester is used. Specifically, acrylic acid, methacrylic acid, itaconic acid, crotonic acid, maleic acid, fumaric acid, vinyl acetate or their anhydrides, methyl acrylate, ethyl acrylate, n-propyl acrylate, isopropyl acrylate, n-pentyl acrylate, sec-butyl acrylate, isobutyl acrylate, n-butyl acrylate, tert-butyl acrylate, 2-n-butoxyethyl acrylate, butoxyethylene glycol acrylate, butoxytriethylene glycol acrylate, 2-ethylhexyl acrylate, glycerol acrylate, heptadecafluorodecyl acrylate , 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 2-methoxyethyl acrylate, isodex Acrylate, isooctyl acrylate, lauryl acrylate, methoxyethylene glycol acrylate, methoxydiethylene glycol acrylate, octafluoroethyl acrylate, trifluoroethyl acrylate, stearyl acrylate, dipentaerythritol hexaacrylate, dipentaerythritol monohydroxypentaacrylate, ditrimethylolpropane Tetraacrylate, glycerol acrylate, neopentyl glycol acrylate, propylene glycol acrylate, acrylamide, aminoethyl acrylate, styrene, α-methylstyrene, allyl acrylate, benzyl acrylate, cyclohexyl acrylate, dicyclopentanyl acrylate, dicyclopentenyl acrylate Examples thereof include compounds in which some or all of the acrylates in the molecule of the above-mentioned compounds are changed to methacrylates.
2官能性モノマーの具体例としては、ジビニルベンゼンなどの芳香族ジビニルモノマー、エチレングリコールジ(メタ)アクリレート、プロピレングリコールジ(メタ)アクリレート、1,4-ブタンジオールジ(メタ)アクリレート、1,6-ヘキサンジオールジ(メタ)アクリレートなどのアルキレングリコールジ(メタ)アクリレート、ジエチレングリコールジ(メタ)アクリレート、トリエチレングリコールジ(メタ)アクリレート、テトラプロピレングリコールジ(メタ)アクリレートなどのポリアルキレングリコールジ(メタ)アクリレート、ウレタンジ(メタ)アクリレート、又はポリエステルジ(メタ)アクリレートなどが挙げられる。 Specific examples of the bifunctional monomer include aromatic divinyl monomers such as divinylbenzene, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6 -Polyalkylene glycol di (meta) such as alkylene glycol di (meth) acrylate such as hexanediol di (meth) acrylate, diethylene glycol di (meth) acrylate, triethylene glycol di (meth) acrylate, tetrapropylene glycol di (meth) acrylate ) Acrylate, urethane di (meth) acrylate, or polyester di (meth) acrylate.
本発明でエチレン性不飽和基を含有する成分は、これらに限定されるものではない。また、これらを1種または2種類以上用いることができる。 In the present invention, the component containing an ethylenically unsaturated group is not limited to these. These can be used alone or in combination of two or more.
エチレン性不飽和基を含有する熱重合開始剤としては、ビニル基、アリル基、アクリロイル基、メタクリロイル基を含有する熱重合開始剤などがあげられる。具体的には、例えば、ジアリルパーオキシジカーボネート、ビス(2-メチル-2-プロペニル)パーオキシジカーボネート、ビス(2-エチル-2-プロペニル)パーオキシジカーボネート、ビス(1-メチル-2-プロペニル)パーオキシジカーボネート、ビス(2-メチル-2-ブテニル)パーオキシジカーボネート、ビス(2-メチル-2-プロペニロキシエチルパーオキシ)ジカーボネートなどが挙げられる。 Examples of the thermal polymerization initiator containing an ethylenically unsaturated group include a thermal polymerization initiator containing a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group. Specifically, for example, diallyl peroxydicarbonate, bis (2-methyl-2-propenyl) peroxydicarbonate, bis (2-ethyl-2-propenyl) peroxydicarbonate, bis (1-methyl-2 -Propenyl) peroxydicarbonate, bis (2-methyl-2-butenyl) peroxydicarbonate, bis (2-methyl-2-propenyloxyethylperoxy) dicarbonate and the like.
熱分解型発泡剤と熱重合開始剤の性質を兼ねる物質は、熱分解型発泡剤が熱によって架橋を促進させる役割を兼ねるものである。そのような成分としては、アゾ系の熱重合開始剤が挙げられる。具体的には、例えば2,2’-アゾビス(2-メチルプロピオニトリル)、2,2’-アゾビス(2-メチルブチロニトリル)、1,1’-アゾビス(シクロヘキサン-1-カルボニトリル)、1-[(1-シアノ-1-メチルエチル)アゾ]ホルムアミド(2-(カルバモイラゾ)イソブチロニトリル)、2,2’-アゾビス{2-メチル-N-[2-(1-ヒドロキシブチル)]-プロピオンアミド}、2,2’-アゾビス[2-メチル-N-(2-ヒドロキシエチル)-プロピオンアミド]、2,2’-アゾビス[N-(2-プロペニル)-2-メチルプロピオンアミド]、2,2’-アゾビス(N-ブチル-2-メチルプロピオンアミド)、2,2’-アゾビス(N-シクロヘキシル-2-メチルプロピオンアミド)、2,2’-アゾビス(2,4,4-トリメチルペンタン)(アゾジ-t-オクタン)等があげられる。 The substance that has the properties of both a pyrolytic foaming agent and a thermal polymerization initiator serves to promote crosslinking by heat. Examples of such components include azo-based thermal polymerization initiators. Specifically, for example, 2,2′-azobis (2-methylpropionitrile), 2,2′-azobis (2-methylbutyronitrile), 1,1′-azobis (cyclohexane-1-carbonitrile) , 1-[(1-cyano-1-methylethyl) azo] formamide (2- (carbamoylazo) isobutyronitrile), 2,2′-azobis {2-methyl-N- [2- (1-hydroxybutyl) )]-Propionamide}, 2,2′-azobis [2-methyl-N- (2-hydroxyethyl) -propionamide], 2,2′-azobis [N- (2-propenyl) -2-methylpropion Amido], 2,2′-azobis (N-butyl-2-methylpropionamide), 2,2′-azobis (N-cyclohexyl-2-methylpropionamide), 2,2′-a Bis (2,4,4-trimethylpentane) (azodi -t- octane) and the like.
エチレン性不飽和基を含有する熱分解型発泡剤としては、ビニル基、アリル基、アクリロイル基、メタクリロイル基を含有するアゾ化合物や、ニトロソ化合物、ヒドラジド化合物などが挙げられる。具体的には、例えばフェニルアゾアクリルアニリド、N-メチル-N-ニトロソアリルアミン、ホモアリルヒドラジドなどがあげられる。 Examples of the thermally decomposable foaming agent containing an ethylenically unsaturated group include an azo compound containing a vinyl group, an allyl group, an acryloyl group, and a methacryloyl group, a nitroso compound, and a hydrazide compound. Specific examples include phenylazoacrylanilide, N-methyl-N-nitrosoallylamine, homoallyl hydrazide and the like.
(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を含有する熱重合開始剤は、50~300℃の範囲で分解して気体を放出するものが好ましく、100~250℃で分解して気体を放出するものがより好ましく、150~250℃で分解して気体を放出するものがさらに好ましい。そのような化合物としては、アゾ化合物、ニトロソ化合物、ヒドラジド化合物、アジド化合物、ヒドラゾン化合物であって、エチレン性不飽和基含有する熱重合開始剤が好ましい。具体的には、例えば、アゾ系の熱重合開始剤で、エチレン性不飽和基を含有する2,2’-アゾビス[N-(2-プロペニル)-2-メチルプロピオンアミド]などが挙げられる。 (D) The thermal polymerization initiator that functions as a thermally decomposable foaming agent and contains an ethylenically unsaturated group is preferably one that decomposes in the range of 50 to 300 ° C. and releases a gas, and is 100 to 250 ° C. Those that decompose and release a gas are more preferable, and those that decompose at 150 to 250 ° C. to release a gas are more preferable. Such a compound is preferably an azo compound, a nitroso compound, a hydrazide compound, an azide compound, or a hydrazone compound, and a thermal polymerization initiator containing an ethylenically unsaturated group. Specific examples include 2,2'-azobis [N- (2-propenyl) -2-methylpropionamide] which is an azo-based thermal polymerization initiator and contains an ethylenically unsaturated group.
(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を含有する熱重合開始剤は、平均粒径が、下限としては1.0μm以上であることが好ましく、3.0μm以上であることがより好ましく、6.0μm以上であることがさらに好ましい。また、上限としては、25μm以下であることが好ましく、20μm以下であることがより好ましく、15μm以下であることがさらに好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。前記(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を含有する熱重合開始剤の平均粒径が、前記の下限値以上であると、亀裂形成をより促進し、電子放出に必要な電圧を低くすることができる。また、前記の上限値以下であると、電子放出源の表面凹凸を少なくして均一に亀裂を形成できるために良好な発光均一性を得ることができる。 (D) The thermal polymerization initiator that functions as a pyrolytic foaming agent and contains an ethylenically unsaturated group preferably has an average particle size of 1.0 μm or more as a lower limit, and 3.0 μm or more. It is more preferable that it is 6.0 μm or more. Moreover, as an upper limit, it is preferable that it is 25 micrometers or less, It is more preferable that it is 20 micrometers or less, It is further more preferable that it is 15 micrometers or less. Any preferred lower limit can be combined with any preferred upper limit. When the average particle diameter of the thermal polymerization initiator that functions as the (D) pyrolytic foaming agent and contains an ethylenically unsaturated group is equal to or greater than the lower limit, crack formation is further promoted, and electrons The voltage required for discharge can be lowered. Moreover, since it is less than the said upper limit and the surface unevenness | corrugation of an electron emission source can be reduced and a crack can be formed uniformly, favorable light emission uniformity can be obtained.
(C)成分として消失性亀裂発生剤と残留性化合物を併用してもよい。特に、金属塩、有機金属化合物、金属錯体、シランカップリング剤およびチタンカップリング剤からなる群より選ばれる1種もしくは何種類かを組み合わせたものを併用するとより好ましい。これらの成分をさらに含有することによって、電子放出源用ペーストを熱処理したときに生じる亀裂が増大し、突出長さの長いカーボンナノチューブが増える。そのため、電子放出特性がさらに良好な電子放出源を得られる。 (C) A disappearing crack generator and a residual compound may be used in combination. In particular, it is more preferable to use a combination of one or several types selected from the group consisting of metal salts, organometallic compounds, metal complexes, silane coupling agents, and titanium coupling agents. By further containing these components, cracks generated when the electron emission source paste is heat-treated increase, and carbon nanotubes having a long protruding length increase. Therefore, an electron emission source with even better electron emission characteristics can be obtained.
電子放出源用ペースト全体に対する消失性亀裂発生剤の含有量は、下限としては1.0重量%以上であることが好ましく、3.0重量%以上であることがより好ましく、5.0重量%以上であることがさらに好ましい。また、上限としては、50重量%以下であることが好ましく、40重量%以下であることがより好ましく、30重量%以下であることがさらに好ましい。いずれの好ましい下限値もいずれの好ましい上限値と組み合わせることができる。また、電子放出源用ペーストから溶剤を除いた固形分全体に対する消失性亀裂発生剤の含有量は、下限としては1.0重量%以上であることが好ましく、5.0重量%以上であることがより好ましく、10重量%以上であることがさらに好ましい。また、上限としては、60重量%以下であることが好ましく、50重量%以下であることがより好ましく、40重量%以下であることがより好ましく、30重量%以下であることがさらに好ましい。消失性亀裂発生剤の含有量が前記範囲内であると、電子放出源塗膜内に均一な亀裂を形成することができる。 The content of the extinguishing crack generating agent with respect to the entire paste for electron emission source is preferably 1.0% by weight or more, more preferably 3.0% by weight or more as a lower limit, and 5.0% by weight. More preferably, it is the above. Moreover, as an upper limit, it is preferable that it is 50 weight% or less, It is more preferable that it is 40 weight% or less, It is further more preferable that it is 30 weight% or less. Any preferred lower limit can be combined with any preferred upper limit. Further, the content of the extinguishing crack generating agent with respect to the entire solid content excluding the solvent from the paste for electron emission source is preferably 1.0% by weight or more as a lower limit, and 5.0% by weight or more. Is more preferable, and it is further more preferable that it is 10 weight% or more. Moreover, as an upper limit, it is preferable that it is 60 weight% or less, It is more preferable that it is 50 weight% or less, It is more preferable that it is 40 weight% or less, It is further more preferable that it is 30 weight% or less. A uniform crack can be formed in an electron emission source coating film as content of a vanishing crack generating agent exists in the said range.
本発明の電子放出源用ペーストは無機粉末を含むことができる。無機粉末は接着剤としての役割を果たすものであればいずれも用いることができる。カーボンナノチューブの耐熱性が500~600℃であること、基板ガラスとしてソーダライムガラス(軟化点500℃程度)を用いることなどを考慮すると、無機粉末の焼結温度は500℃以下が好ましく、450℃以下がさらに好ましい。前記焼結温度を有する無機粉末を用いることで、カーボンナノチューブの焼失を抑制し、かつソーダライムガラスなどの安価な基板ガラスを使用することができる。このような無機粉末の具体例としては銀、銅、ニッケル、合金、はんだなどの金属粉末、ガラス粉末、もしくはそれらを混ぜたものなどが挙げられる。金属粉末は触媒作用によってカーボンナノチューブの焼失を促進する場合があることから、本発明の電子放出源用ペーストにおいてはガラス粉末が好ましく用いられる。 The electron emission source paste of the present invention can contain an inorganic powder. Any inorganic powder can be used as long as it plays a role as an adhesive. Considering that the heat resistance of the carbon nanotube is 500 to 600 ° C. and using soda lime glass (softening point of about 500 ° C.) as the substrate glass, the sintering temperature of the inorganic powder is preferably 500 ° C. or less, and 450 ° C. More preferred are: By using the inorganic powder having the sintering temperature, it is possible to suppress burning of the carbon nanotubes and to use an inexpensive substrate glass such as soda lime glass. Specific examples of such inorganic powders include metal powders such as silver, copper, nickel, alloys, and solder, glass powders, or a mixture thereof. Glass powder is preferably used in the paste for electron emission source of the present invention because the metal powder may promote the burning of carbon nanotubes by catalytic action.
ガラス粉末の焼結温度を表すガラス軟化点はガラス組成によって異なるため、ガラス組成の選択によって制御することができる。本発明の電子放出源用ペーストに含まれるガラス粉末としてはBi2O3系ガラス、アルカリ系ガラス、SnO-P2O5系ガラス、SnO-B2O3系ガラスなどが好ましく用いられる。前記ガラス粉末を用いると、ガラス軟化点を300℃~450℃の範囲に制御することができるため好ましい。 Since the glass softening point representing the sintering temperature of the glass powder varies depending on the glass composition, it can be controlled by selecting the glass composition. As the glass powder contained in the electron emission source paste of the present invention, Bi 2 O 3 glass, alkali glass, SnO—P 2 O 5 glass, SnO—B 2 O 3 glass and the like are preferably used. Use of the glass powder is preferable because the glass softening point can be controlled in the range of 300 ° C to 450 ° C.
電子放出源用ペーストに含まれる(A)電子放出材料と無機粉末の比は、電子放出材料100重量部に対し、無機粉末が200~8000重量部であることが好ましい。200重量部以上であれば十分な接着性が得られ、8000重量部以下であると電子放出源用ペーストが適度な粘度となる。 The ratio of the electron emission material (A) contained in the electron emission source paste to the inorganic powder is preferably 200 to 8000 parts by weight of the inorganic powder with respect to 100 parts by weight of the electron emission material. If it is 200 parts by weight or more, sufficient adhesiveness can be obtained, and if it is 8000 parts by weight or less, the electron emission source paste has an appropriate viscosity.
無機粉末の平均粒径は2.0μm以下が好ましく、1.0μm以下がさらに好ましい。無機粉末の平均粒径が2.0μm以下であると、微細な電子放出源パターンの形成性と電子放出源とカソード電極の接着性を得ることができる。ここで平均粒径とは、累積50%粒径(D50)のことをさし、熱分解型発泡剤粒子の場合と同様の方法で測定することができる。 The average particle size of the inorganic powder is preferably 2.0 μm or less, and more preferably 1.0 μm or less. When the average particle diameter of the inorganic powder is 2.0 μm or less, it is possible to obtain the formability of a fine electron emission source pattern and the adhesion between the electron emission source and the cathode electrode. Here, the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
本発明の電子放出源用ペーストは導電性粒子を含むことが好ましい。電子放出源用ペーストが導電性粒子を含むことで、電子放出源内部の抵抗値が下がり、電子放出源からより低電圧での電子放出が可能となる。前記導電性粒子は、導電性のあるものであれば特に限定されないが、導電性酸化物を含む粒子、あるいは酸化物表面の一部または全部に導電性材料がコーティングされた粒子であることが好ましい。金属は触媒活性が高く、焼成や電子放出により高温になったときに電子放出材料を劣化させることがあるためである。導電性酸化物としては、酸化インジウム・スズ(ITO)、酸化スズ、酸化亜鉛などが好ましい。また、酸化チタン、酸化ケイ素などの酸化物表面の一部または全部にITO、酸化スズ、酸化亜鉛、金、白金、銀、銅、パラジウム、ニッケル、鉄、コバルトなどがコーティングされたものも好ましい。この場合も、導電性材料のコーティング材料としては、ITO、酸化スズ、酸化亜鉛などの導電性酸化物が好ましい。 The electron emission source paste of the present invention preferably contains conductive particles. When the paste for the electron emission source contains conductive particles, the resistance value inside the electron emission source is lowered, and the electron emission from the electron emission source can be performed at a lower voltage. The conductive particles are not particularly limited as long as they are conductive, but are preferably particles containing a conductive oxide, or particles in which a conductive material is coated on part or all of the oxide surface. . This is because metal has high catalytic activity and may deteriorate the electron-emitting material when the temperature becomes high due to firing or electron emission. As the conductive oxide, indium tin oxide (ITO), tin oxide, zinc oxide and the like are preferable. Moreover, what coated ITO, tin oxide, zinc oxide, gold | metal | money, platinum, silver, copper, palladium, nickel, iron, cobalt etc. in part or all of oxide surfaces, such as a titanium oxide and a silicon oxide, is also preferable. Also in this case, the conductive material is preferably a conductive oxide such as ITO, tin oxide, or zinc oxide.
電子放出源用ペースト中に導電性粒子が含まれる場合、その含有量は、電子放出材料1.0重量部に対して導電性粒子0.1~100重量部であることが好ましく、0.5~50重量部であることがさらに好ましい。導電性粒子の含有量が前記範囲内であると、電子放出材料とカソード電極の電気的接触がより良好となることから特に好ましい。 When conductive particles are contained in the electron emission source paste, the content thereof is preferably 0.1 to 100 parts by weight of conductive particles with respect to 1.0 part by weight of the electron emission material. More preferably, it is ˜50 parts by weight. When the content of the conductive particles is within the above range, it is particularly preferable because the electrical contact between the electron emission material and the cathode electrode becomes better.
導電性粒子の平均粒径は0.1~1.0μmが好ましく、0.1~0.6μmがさらに好ましい。導電性粒子の平均粒径が前記範囲内であると、電子放出源内部の抵抗値均一性が良好であり、さらには表面平坦性が得られることから、低電圧で表面から均一な電子放出を得ることができる。ここで平均粒径とは、累積50%粒径(D50)のことをさし、熱分解型発泡剤粒子の場合と同様の方法で測定することができる。 The average particle size of the conductive particles is preferably from 0.1 to 1.0 μm, more preferably from 0.1 to 0.6 μm. If the average particle size of the conductive particles is within the above range, the uniformity of the resistance value inside the electron emission source is good and further the surface flatness is obtained, so that uniform electron emission from the surface can be achieved at a low voltage. Obtainable. Here, the average particle diameter means a cumulative 50% particle diameter (D 50 ), and can be measured by the same method as in the case of the pyrolytic foaming agent particles.
本発明の電子放出源用ペーストは、スクリーン印刷やインクジェット塗布などの一般的な印刷法でのパターン形成性能を付与するために、有機バインダー、溶媒、分散剤を含むことができる。さらにペースト特性を向上させるために、可塑剤、増粘剤、酸化防止剤、有機あるいは無機の沈殿防止剤やレベリング剤等の添加剤を含んでもよい。また、フォトリソグラフィーによってパターン形成する場合は、エチレン性不飽和基を有する樹脂、光硬化性モノマー、光重合開始剤、紫外線吸収剤、重合禁止剤、増感剤等を含むことで感光性を付与することができる。 The electron emission source paste of the present invention can contain an organic binder, a solvent, and a dispersant in order to impart pattern forming performance by a general printing method such as screen printing or inkjet coating. Furthermore, additives such as plasticizers, thickeners, antioxidants, organic or inorganic precipitation inhibitors and leveling agents may be included to improve paste characteristics. In addition, when pattern formation is performed by photolithography, photosensitivity is imparted by including a resin having an ethylenically unsaturated group, a photocurable monomer, a photopolymerization initiator, an ultraviolet absorber, a polymerization inhibitor, a sensitizer, and the like. can do.
有機バインダーとしては、セルロース系樹脂(エチルセルロース、メチルセルロース、ニトロセルロース、アセチルセルロース、セルロースプロピオネート、ヒドロキシプロピルセルロース、ブチルセルロース、ベンジルセルロース、変性セルロースなど)、アクリル系樹脂(アクリル酸、メタクリル酸、メチルアクリレート、メチルメタクリレート、エチルアクリレート、エチルメタクリレート、プロピルアクリレート、プロピルメタクリレート、イソプロピルアクリレート、イソプロピルメタクリレート、n-ブチルアクリレート、n-ブチルメタクリレート、tert-ブチルアクリレート、tert-ブチルメタクリレート、2-ヒドロキシエチルアクリレート、2-ヒドロキシエチルメタクリレート、2-ヒドロキシプロピルアクリレート、2-ヒドロキシプロピルメタクリレート、ベンジルアクリレート、ベンジルメタクリレート、フェノキシエチルアクリレート、フェノキシエチルメタクリレート、イソボルニルアクリレート、イソボルニルメタクリレート、グリシジルメタクリレート、スチレン、α-メチルスチレン、3-メチルスチレン、4-メチルスチレン、アクリルアミド、メタアクリルアミド、アクリロニトリル、メタアクリロニトリルなど単量体のうち少なくとも1種からなる重合体)、エチレン-酢酸ビニル共重合体樹脂、ポリビニルブチラール、ポリビニルアルコール、プロピレングリコール、ウレタン系樹脂、メラミン系樹脂、フェノール樹脂、アルキド樹脂などが挙げられる。 Organic binders include cellulose resins (ethyl cellulose, methyl cellulose, nitrocellulose, acetyl cellulose, cellulose propionate, hydroxypropyl cellulose, butyl cellulose, benzyl cellulose, modified cellulose, etc.), acrylic resins (acrylic acid, methacrylic acid, methyl Acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, propyl acrylate, propyl methacrylate, isopropyl acrylate, isopropyl methacrylate, n-butyl acrylate, n-butyl methacrylate, tert-butyl acrylate, tert-butyl methacrylate, 2-hydroxyethyl acrylate, 2 -Hydroxyethyl methacrylate, 2-hydroxypropylene Relate, 2-hydroxypropyl methacrylate, benzyl acrylate, benzyl methacrylate, phenoxyethyl acrylate, phenoxyethyl methacrylate, isobornyl acrylate, isobornyl methacrylate, glycidyl methacrylate, styrene, α-methylstyrene, 3-methylstyrene, 4-methyl Polymer consisting of at least one of monomers such as styrene, acrylamide, methacrylamide, acrylonitrile, methacrylonitrile), ethylene-vinyl acetate copolymer resin, polyvinyl butyral, polyvinyl alcohol, propylene glycol, urethane resin, melamine Resins, phenol resins, alkyd resins and the like can be mentioned.
溶媒としては、バインダー樹脂等有機成分を溶解するものが好ましい。例えば、エチレングリコールやグリセリンに代表されるジオールやトリオールなどの多価アルコール、アルコールをエーテル化および/またはエステル化した化合物(エチレングリコールモノアルキルエーテル、エチレングリコールジアルキルエーテル、エチレングリコールアルキルエーテルアセテート、ジエチレングリコールモノアルキルエーテルアセテート、ジエチレングリコールジアルキルエーテル、プロピレングリコールモノアルキルエーテル、プロピレングリコールジアルキルエーテル、プロピレングリコールアルキルエーテルアセテート)などが挙げられる。より具体的には、テルピネオール、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノプロピルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、エチレングリコールジプロピルエーテル、ジエチレングリコールジブチルエーテル、メチルセロソルブアセテート、エチルセロソルブアセテート、プロピルセロソルブアセテート、ブチルセロソルブアセテート、プロピレングリコールモノメチルエーテルアセテート、プロピレングリコールモノエチルエーテルアセテート、プロピレングリコールモノプロピルエーテルアセテート、2,2,4-トリメチル-1,3-ペンタンジオールモノイソブチレート、ブチルカルビトールアセテートなどやこれらのうちの1種以上を含有する有機溶媒混合物が用いられる。 The solvent is preferably a solvent that dissolves an organic component such as a binder resin. For example, polyhydric alcohols such as diol and triol typified by ethylene glycol and glycerin, compounds obtained by etherification and / or esterification of alcohol (ethylene glycol monoalkyl ether, ethylene glycol dialkyl ether, ethylene glycol alkyl ether acetate, diethylene glycol monoacetate) Alkyl ether acetate, diethylene glycol dialkyl ether, propylene glycol monoalkyl ether, propylene glycol dialkyl ether, propylene glycol alkyl ether acetate) and the like. More specifically, terpineol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, ethylene glycol dipropyl ether, diethylene glycol dibutyl ether, methyl cellosolve acetate , Ethyl cellosolve acetate, propyl cellosolve acetate, butyl cellosolve acetate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, 2,2,4-trimethyl-1,3-pentanediol monoisobutylene DOO, organic solvent mixture containing one or more of such or these butyl carbitol acetate is used.
本発明の電子放出源用ペーストの作製方法としては、電子放出材料、熱分解型発泡剤および熱分解時に収縮応力を発生する成分、さらに必要に応じて無機粉末、有機バインダー、分散剤、溶媒等の各種成分を所定の組成になるよう添加した後、ボールミル、遊星式ボールミル、ビーズミル、ウルトラアペックスミル、ミキサー、三本ローラー、ホモジナイザー等の混練機や超音波を用いて均質に分散する方法が挙げられる。ペースト粘度は、ガラス粉末、増粘剤、溶媒、可塑剤および沈殿防止剤等の添加割合によって調整されるが、印刷手法によってペーストに必要な粘度範囲が異なるため、ペースト粘度は適宜調整される。例えばスリットダイコーターやスクリーン印刷法によってパターン形成する場合、粘度は2~200Pa・sであることが好ましい。また、スピンコート法、スプレー法やインクジェット法でパターン形成する場合、粘度は0.001~5Pa・sが好ましい。 The method for producing the paste for an electron emission source of the present invention includes an electron emission material, a pyrolytic foaming agent, a component that generates shrinkage stress during thermal decomposition, and further, if necessary, an inorganic powder, an organic binder, a dispersant, a solvent, etc. Are added to the desired composition, and then uniformly dispersed using a kneading machine such as a ball mill, a planetary ball mill, a bead mill, an ultra apex mill, a mixer, a three-roller, a homogenizer, or ultrasonic waves. It is done. The paste viscosity is adjusted depending on the addition ratio of glass powder, thickener, solvent, plasticizer, suspending agent, and the like, but the viscosity range required for the paste varies depending on the printing technique, so the paste viscosity is adjusted as appropriate. For example, when a pattern is formed by a slit die coater or a screen printing method, the viscosity is preferably 2 to 200 Pa · s. In the case of forming a pattern by a spin coating method, a spray method or an ink jet method, the viscosity is preferably 0.001 to 5 Pa · s.
以下に、本発明の電子放出源用ペーストを用いた電子放出源および電子放出素子の作製方法について説明する。なお、電子放出源および電子放出素子の作製は、その他の公知の方法を用いてもよく、後述する作製方法に限定されない。 Hereinafter, an electron emission source and an electron emission device manufacturing method using the electron emission source paste of the present invention will be described. Note that other known methods may be used for manufacturing the electron-emitting source and the electron-emitting device, and the method is not limited to the manufacturing method described later.
はじめに電子放出源の作製方法について説明する。電子放出源は、以下に説明するように、本発明の電子放出源用ペーストを用いたパターンを基板上に形成後、焼成することにより得られる。まず、本発明の電子放出源用ペーストを用いて基板上に電子放出源のパターンを形成する。基板としては電子放出源を固定するものであればいかなるものでも良く、ガラス基板、セラミック基板、金属基板、フィルム基板などが挙げられる。基板上には導電性を有する膜が形成されていることが好ましい。基板上に電子放出源のパターンを形成する方法としては、一般的なスクリーン印刷法、インクジェット法などの印刷法が好ましく用いられる。また、感光性を付与した電子放出源用ペーストを用いると、フォトリソグラフィーによって微細な電子放出源のパターンを一括で形成することができるため好ましい。具体的には、スクリーン印刷法またはスリットダイコーター等で基板上に本発明の感光性を付与した電子放出源用ペーストを印刷した後、熱風乾燥機で乾燥して電子放出源用ペーストの塗膜を得る。前記塗膜に対して、上面(電子放出源用ペースト側)からフォトマスクを通じて紫外線を照射した後、アルカリ現像液や有機現像液などで現像して電子放出源パターンを形成することができる。次に電子放出源のパターンを焼成する。焼成雰囲気は大気中または窒素などの不活性ガス雰囲気中にて、焼成温度は400~500℃の温度で焼成する。 First, a method for manufacturing an electron emission source will be described. As will be described below, the electron emission source can be obtained by forming a pattern using the electron emission source paste of the present invention on a substrate and then baking it. First, an electron emission source pattern is formed on a substrate using the electron emission source paste of the present invention. As the substrate, any substrate that fixes the electron emission source may be used, and examples thereof include a glass substrate, a ceramic substrate, a metal substrate, and a film substrate. A conductive film is preferably formed on the substrate. As a method for forming the pattern of the electron emission source on the substrate, a printing method such as a general screen printing method or an ink jet method is preferably used. Further, it is preferable to use an electron emission source paste imparted with photosensitivity because a fine electron emission source pattern can be collectively formed by photolithography. Specifically, the electron emission source paste imparted with the photosensitivity of the present invention is printed on the substrate by a screen printing method or a slit die coater, and then dried by a hot air dryer to form a coating film of the electron emission source paste. Get. The coating film may be irradiated with ultraviolet rays through a photomask from the upper surface (electron emission source paste side), and then developed with an alkali developer or an organic developer to form an electron emission source pattern. Next, the pattern of the electron emission source is baked. The firing is performed in air or an inert gas atmosphere such as nitrogen, and the firing temperature is 400 to 500 ° C.
次に電子放出素子の作製方法について説明する。電子放出素子は、本発明の電子放出源用ペーストからなる電子放出源をカソード電極上に形成して背面板を作製し、アノード電極と蛍光体を有する前面板と対向させることにより得ることができる。以下、ダイオード型電子放出素子の作製方法とトライオード型電子放出素子の作製方法について詳細に説明する。 Next, a method for manufacturing an electron-emitting device will be described. The electron-emitting device can be obtained by forming an electron emission source made of the paste for an electron emission source of the present invention on a cathode electrode to produce a back plate, and facing an anode electrode and a front plate having a phosphor. . Hereinafter, a method for manufacturing a diode-type electron-emitting device and a method for manufacturing a triode-type electron-emitting device will be described in detail.
ダイオード型電子放出素子の作製方法においては、まず、ガラス基板上にカソード電極を形成する。カソード電極は、ITOやクロム等の導電性膜をスパッタ法などによってガラス基板上に成膜することができる。カソード電極上には、前述の方法によって本発明の電子放出源用ペーストを用いて電子放出源を作製し、ダイオード型電子放出素子用の背面板が得られる。次にガラス基板上にアノード電極を形成する。アノード電極はITO等の透明導電性膜をスパッタ法などによってガラス基板上に成膜することができる。ガラス基板上に形成されたアノード電極上に蛍光体を印刷し、ダイオード型電子放出素子の前面板が得られる。ダイオード型電子放出素子用背面板および前面板は、電子放出源と蛍光体が対向するようにスペーサーを挟んで貼り合わせ、容器に接続した排気管で真空排気して、内部の真空度が1×10-3Pa以下の状態で融着することによりダイオード型電子放出素子が得られる。電子放出状態を確認するために、アノード電極に1~5kVの電圧を供給することで、カーボンナノチューブから電子が放出されて蛍光体にぶつかり、蛍光体の発光を得ることができる。 In the manufacturing method of the diode-type electron-emitting device, first, a cathode electrode is formed on a glass substrate. As the cathode electrode, a conductive film such as ITO or chromium can be formed on the glass substrate by sputtering or the like. On the cathode electrode, an electron emission source is prepared by the above-described method using the electron emission source paste of the present invention, and a back plate for a diode-type electron emission element is obtained. Next, an anode electrode is formed on the glass substrate. As the anode electrode, a transparent conductive film such as ITO can be formed on the glass substrate by sputtering or the like. A phosphor is printed on the anode electrode formed on the glass substrate to obtain a front plate of the diode-type electron-emitting device. The back plate and front plate for the diode-type electron-emitting device are bonded together with a spacer so that the electron emission source and the phosphor face each other, and evacuated by an exhaust pipe connected to the container, so that the internal vacuum degree is 1 × A diode-type electron-emitting device can be obtained by fusing in a state of 10 −3 Pa or less. In order to confirm the electron emission state, by supplying a voltage of 1 to 5 kV to the anode electrode, electrons are emitted from the carbon nanotubes and collide with the phosphor, whereby the phosphor can emit light.
トライオード型電子放出素子の作製方法においては、まず、ガラス基板上にカソード電極を作製する。カソード電極は、ITOやクロム等の導電性膜をスパッタ法などによって成膜することができる。次いで、カソード電極上に絶縁層を作製する。絶縁層は絶縁材料を印刷法または真空蒸着法などにより、膜厚3~20μm程度で作製することができる。次いで、絶縁層上にゲート電極層を作製する。ゲート電極層はクロムなどの導電性膜を真空蒸着法などにより形成することで得られる。次いで、絶縁層にエミッタホールを作製する。エミッタホールの作製方法は、まずゲート電極上にレジスト材料をスピンコーター法などで塗布、乾燥し、フォトマスクを通じて紫外線を照射してパターンを転写した後、アルカリ現像液などで現像する。現像によって開口した部分からゲート電極および絶縁層をエッチングすることで、絶縁層にエミッタホールを形成することができる。次いで、前述の方法によって本発明の電子放出源用ペーストを用いてエミッタホール内部に電子放出源を作製し、トライオード型電子放出素子用の背面板が得られる。次にガラス基板上にアノード電極を形成する。アノード電極はITO等の透明導電性膜をスパッタ法などによってガラス基板上に成膜することができる。ガラス基板上に形成されたアノード電極上に蛍光体を印刷し、トライオード型電子放出素子の前面板が得られる。トライオード型電子放出素子用背面板および前面板は、電子放出源と蛍光体が対向するようにスペーサーを挟んで貼り合わせ、容器に接続した排気管で真空排気して、内部の真空度が1.0×10-3Pa以下の状態で融着することによりダイオード型電子放出素子が得られる。電子放出状態を確認するために、アノード電極に1~5kV、ゲート電極に20~150Vの電圧を供給することで、カーボンナノチューブから電子が放出されて蛍光体にぶつかり、蛍光体の発光を得ることができる。 In the method for producing a triode type electron-emitting device, first, a cathode electrode is produced on a glass substrate. As the cathode electrode, a conductive film such as ITO or chromium can be formed by sputtering or the like. Next, an insulating layer is formed on the cathode electrode. The insulating layer can be formed with an insulating material having a thickness of about 3 to 20 μm by a printing method or a vacuum evaporation method. Next, a gate electrode layer is formed over the insulating layer. The gate electrode layer can be obtained by forming a conductive film such as chromium by a vacuum deposition method or the like. Next, an emitter hole is formed in the insulating layer. The emitter hole is formed by first applying a resist material on the gate electrode by a spin coater method, drying, irradiating ultraviolet rays through a photomask, transferring the pattern, and then developing with an alkali developer or the like. By etching the gate electrode and the insulating layer from the portion opened by development, an emitter hole can be formed in the insulating layer. Next, an electron emission source is produced in the emitter hole by using the electron emission source paste of the present invention by the above-described method, and a back plate for a triode type electron emission device is obtained. Next, an anode electrode is formed on the glass substrate. As the anode electrode, a transparent conductive film such as ITO can be formed on the glass substrate by sputtering or the like. A phosphor is printed on the anode electrode formed on the glass substrate to obtain a front plate of the triode type electron-emitting device. The back plate and the front plate for the triode type electron-emitting device are bonded together with a spacer so that the electron emission source and the phosphor face each other, and evacuated by an exhaust pipe connected to the container. A diode-type electron-emitting device can be obtained by fusing in a state of 0 × 10 −3 Pa or less. In order to confirm the electron emission state, by supplying a voltage of 1 to 5 kV to the anode electrode and a voltage of 20 to 150 V to the gate electrode, electrons are emitted from the carbon nanotubes and collide with the phosphor to obtain light emission of the phosphor. Can do.
本発明の電子放出源用ペーストを用いて作製された電子放出源は、例えば走査型電子顕微鏡(S-4800)に組み合わされたエネルギー分散型X線分析装置(EMAX ENERGY EX-250)等によって、その組成を分析することができる。前記方法を用いた具体的な分析方法としては、まず走査型電子顕微鏡を用いて電子放出源を観察することで、各成分の形状から例えばファイバー状の構造を持つ電子放出材料、粒子状の導電性酸化物およびマトリックスとしてのガラス成分を概ね特定することができる。さらにエネルギー分散型X線分析装置を用いることで各成分の元素分析を行い、組成を特定することができる。ただし、電子放出源の分析は電子放出源の組成を特定できるものであればいずれの方法を用いても良く、これらの方法に限定されるものではない。 An electron emission source produced using the paste for an electron emission source of the present invention can be obtained by, for example, an energy dispersive X-ray analyzer (EMAXAENERGY EX-250) combined with a scanning electron microscope (S-4800). Its composition can be analyzed. As a specific analysis method using the above-described method, first, an electron emission source is observed using a scanning electron microscope, so that, for example, an electron-emitting material having a fiber-like structure, a particle-like conductive property, and the like from the shape of each component. The glass component as a functional oxide and a matrix can be generally specified. Further, by using an energy dispersive X-ray analyzer, elemental analysis of each component can be performed and the composition can be specified. However, the analysis of the electron emission source may be any method as long as the composition of the electron emission source can be specified, and is not limited to these methods.
さらに、本発明の電子放出源用ペーストを用いると、例えば、以下のような電子放出源を作製することができる。亀裂を有し、亀裂の内部に電子放出材料が突出した電子放出源であって、電子放出源の最短長さが1.0mm以下であり、かつ電子放出源に占める亀裂部の割合が10%以上である電子放出源。 Furthermore, by using the electron emission source paste of the present invention, for example, the following electron emission source can be produced. An electron emission source having a crack, in which an electron emission material protrudes into the crack, wherein the minimum length of the electron emission source is 1.0 mm or less, and the ratio of the crack portion in the electron emission source is 10% That is the electron emission source.
このように微小でありながらも高密度に形成された亀裂を有する電子放出源は、デバイスとして使用したときに高解像度かつ良好な電子放出特性を両立できる電子放出源である。 Such an electron emission source having cracks formed at a high density even though it is minute as described above is an electron emission source capable of achieving both high resolution and good electron emission characteristics when used as a device.
電子放出源の平面形状は特に制限はないが、発光均一性が良好になる点から正方形、長方形、平行四辺形、台形、円形、三角形、四角形、楕円、扇形、正n角形(nは5以上の整数)もしくはそれらに準じた形状が好ましく用いられる。 The planar shape of the electron emission source is not particularly limited, but is square, rectangular, parallelogram, trapezoid, circle, triangle, quadrangle, ellipse, sector, regular n-gon (n is 5 or more) in terms of good emission uniformity. Integers) or shapes according to them are preferably used.
電子放出源の最短長さは以下の方法で求める。まず、基板と略垂直方向から電子放出源を見たときに、基板と略平行な平面図形と考える。このとき、一般的な平面図形の重心の求め方に順じて、電子放出源の重心を決定する。さらに、この重心を通る直線と電子放出源の平面図形とが交わる2点の距離が、最も短くなるような直線を選ぶ。そのときの、その交点間の長さを電子放出源の最短長さとする。この方法で求められる電子放出源の最短長さは、平面図形が正方形のときは一辺の長さと等しく、長方形のときは短いほうの辺の長さと等しく、円形であるときは直径の長さと等しい。電子放出源の最短長さは1.0mm以下であることが好ましく、0.5mm以下であることがより好ましく、0.3mm以下であることがさらに好ましい。電子放出源の最短長さが前記範囲であると、より高解像度のデバイスを得ることができる。 The minimum length of the electron emission source is obtained by the following method. First, when the electron emission source is viewed from a direction substantially perpendicular to the substrate, it is considered to be a plane figure substantially parallel to the substrate. At this time, the center of gravity of the electron emission source is determined in accordance with a method for obtaining the center of gravity of a general plane figure. Further, a straight line is selected so that the distance between two points where the straight line passing through the center of gravity and the plane figure of the electron emission source intersect is the shortest. The length between the intersections at that time is defined as the shortest length of the electron emission source. The minimum length of the electron emission source required by this method is equal to the length of one side when the plane figure is square, equal to the length of the short side when rectangular, and equal to the length of diameter when circular. . The shortest length of the electron emission source is preferably 1.0 mm or less, more preferably 0.5 mm or less, and further preferably 0.3 mm or less. When the minimum length of the electron emission source is within the above range, a device with higher resolution can be obtained.
次に、電子放出源に占める亀裂部の割合は以下の方法で求める。前記方法と同様にして電子放出源を平面図形と考えたとき、平面図形全体の面積に占める、亀裂が発生した面積を「電子放出源に占める亀裂部の割合」としてパーセンテージ(%)で表す。前記面積の計算方法の一例としては、電子放出源の平面図形を走査型電子顕微鏡や光学顕微鏡の画像データとして取り込み、一般的な画像処理ソフト、例えばMATLAB(MathWorks社製)を用いて計算することができる。電子放出源に占める亀裂部の割合は10%以上であることが好ましく、15%以上であることがより好ましく、20%以上であることがさらに好ましい。電子放出源に占める亀裂部の割合が前記範囲であると、電子放出に必要な電圧が低く、発光均一性に優れた電子放出源を得ることができる。 Next, the ratio of cracks in the electron emission source is obtained by the following method. When the electron emission source is considered to be a plane figure in the same manner as in the above method, the area where cracks occupy the area of the entire plane figure is expressed as a percentage (%) as the “ratio of cracks in the electron emission source”. As an example of the area calculation method, a plane figure of an electron emission source is taken in as image data of a scanning electron microscope or an optical microscope, and is calculated using general image processing software, for example, MATLAB (manufactured by MathWorks). Can do. The ratio of cracks in the electron emission source is preferably 10% or more, more preferably 15% or more, and further preferably 20% or more. When the ratio of the crack portion in the electron emission source is within the above range, an electron emission source having a low voltage required for electron emission and excellent light emission uniformity can be obtained.
以下に、本発明を実施例に具体的に説明する。ただし、本発明はこれに限定されるものではない。各実施例および比較例に用いた電子放出材料、無機粉末および有機成分ならびに各実施例および比較例における評価項目の評価方法は次の通りである。 Hereinafter, the present invention will be described in detail by way of examples. However, the present invention is not limited to this. The electron emission materials, inorganic powders and organic components used in the examples and comparative examples, and the evaluation methods of the evaluation items in the examples and comparative examples are as follows.
(A)成分
<電子放出材料>
カーボンナノチューブ1:2層カーボンナノチューブ(シンセンナノテクポート社製)
カーボンナノチューブ2:多層カーボンナノチューブ(東レ(株)製)。
(A) component <electron emission material>
Carbon nanotube 1: Double-walled carbon nanotube (manufactured by Shenzhen Nanotechport)
Carbon nanotube 2: Multi-walled carbon nanotube (manufactured by Toray Industries, Inc.).
(B)成分
<熱分解型発泡剤>
熱分解型発泡剤1:アゾジカルボンアミド 分解温度 200℃(三協化成(株)‘セルマイクC121’、平均粒径12μm)
熱分解型発泡剤2:ジニトロソペンタメチレンテトラミン 分解温度 205℃(三協化成(株)‘セルマイクA’を日清エンジニアリング(株)製‘ターボクラシファイア’で乾式遠心分級したもの、平均粒径15μm)
熱分解型発泡剤3:p,p’-オキシビス(ベンゼンスルホニルヒドラジド) 分解温度 160℃ (三協化成(株)‘セルマイクS’、平均粒径13μm)
熱分解型発泡剤1の平均粒径1.0μm品(三協化成(株)‘セルマイクC-2’を日清エンジニアリング(株)製‘ターボクラシファイア’で乾式遠心分級したもの)
熱分解型発泡剤1の平均粒径6.0μm品(三協化成(株)‘セルマイクCE’)
熱分解型発泡剤1の平均粒径18μm品(三協化成(株)‘セルマイクC-191’)
熱分解型発泡剤1の平均粒径25μm品(永和化成工業(株)‘ビニホールAC#K3’)。
Component (B) <Pyrolytic foaming agent>
Thermal Decomposable Foaming Agent 1: Azodicarbonamide Decomposition temperature 200 ° C. (Sankyo Kasei Co., Ltd. 'Cermic C121', average particle size 12 μm)
Thermal decomposition type foaming agent 2: Dinitrosopentamethylenetetramine Decomposition temperature 205 ° C. (Sankyo Kasei Co., Ltd., “Cermic A” was subjected to dry centrifugal classification with Nisshin Engineering Co., Ltd. “Turbo Classifier”, average particle size 15 μm )
Thermal decomposable foaming agent 3: p, p'-oxybis (benzenesulfonylhydrazide) Decomposition temperature 160 ° C (Sankyo Kasei Co., Ltd. 'Cermic S', average particle size 13 µm)
Thermally
Thermally
A product having an average particle size of 25 μm of the pyrolytic foaming agent 1 (Yewa Kasei Kogyo Co., Ltd., “Binihol AC # K3”).
(C)成分
<残留性化合物>
金属炭酸塩1:塩基性炭酸マグネシウム、重質(和光純薬工業(株))(熱分解温度:250℃、400℃)
金属炭酸塩2:炭酸ナトリウム十水和物(和光純薬工業(株))(熱分解温度:200℃)
金属炭酸塩3:炭酸水素ナトリウム(和光純薬工業(株))(熱分解温度:300℃)
金属硝酸塩:硝酸マグネシウム六水和物(和光純薬工業(株))(熱分解温度:400℃)
金属硫酸塩:硫酸マグネシウム七水和物(和光純薬工業(株))(熱分解温度:200℃)
金属水酸化物塩:水酸化マグネシウム(和光純薬工業(株))(熱分解温度:350℃)
有機金属化合物:ニッカオクチックス錫(日本化学産業(株))(熱分解温度:350℃)
金属錯体1:ナーセム錫(日本化学産業(株))(熱分解温度:200℃)
金属錯体2:ビス(アセチルアセトナト)亜鉛(II)(日本化学産業(株))(熱分解温度:150℃)
シランカップリング剤:“KBE-04”(信越シリコーン(株))(熱分解温度:150℃)
チタンカップリング剤:“オルガチックスTA30”(マツモトファインケミカル(株))(熱分解温度:150℃)。
(C) component <residual compound>
Metal carbonate 1: basic magnesium carbonate, heavy (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 250 ° C, 400 ° C)
Metal carbonate 2: Sodium carbonate decahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 200 ° C.)
Metal carbonate 3: Sodium hydrogen carbonate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 300 ° C.)
Metal nitrate: Magnesium nitrate hexahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 400 ° C)
Metal sulfate: Magnesium sulfate heptahydrate (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 200 ° C)
Metal hydroxide salt: Magnesium hydroxide (Wako Pure Chemical Industries, Ltd.) (thermal decomposition temperature: 350 ° C)
Organometallic compound: Nikka Octix Tin (Nippon Chemical Industry Co., Ltd.) (thermal decomposition temperature: 350 ° C)
Metal complex 1: Nasem tin (Nippon Chemical Industry Co., Ltd.) (thermal decomposition temperature: 200 ° C)
Metal complex 2: bis (acetylacetonato) zinc (II) (Nippon Chemical Industry Co., Ltd.) (thermal decomposition temperature: 150 ° C.)
Silane coupling agent: “KBE-04” (Shin-Etsu Silicone Co., Ltd.) (thermal decomposition temperature: 150 ° C.)
Titanium coupling agent: “Orga Tix TA30” (Matsumoto Fine Chemical Co., Ltd.) (thermal decomposition temperature: 150 ° C.).
<熱重合開始剤>
熱重合開始剤1:t-ブチルパーオキシラウレート 10時間半減期温度 98℃
熱重合開始剤2:t-エチルパーオキシ-2-エチルヘキサノエート 10時間半減期温度 72℃
熱重合開始剤3:ジベンゾイルパーオキシド 10時間半減期温度 74℃。
<Thermal polymerization initiator>
Thermal polymerization initiator 1: t-butyl peroxylaurate 10 hours half-life temperature 98 ° C
Thermal polymerization initiator 2: t-ethylperoxy-2-ethylhexanoate 10 hours half-life temperature 72 ° C
Thermal polymerization initiator 3: Dibenzoyl peroxide 10 hours half-life temperature 74 ° C.
<エチレン性不飽和基含有化合物>
エチレン性不飽和基含有化合物1:テトラプロピレングリコールジメタクリレート
エチレン性不飽和基含有化合物2:シクロヘキシルアクリレート
エチレン性不飽和基含有化合物3:n-ブチルアクリレート。
<Ethylenically unsaturated group-containing compound>
Ethylenically unsaturated group-containing compound 1: Tetrapropylene glycol dimethacrylate Ethylenically unsaturated group-containing compound 2: Cyclohexyl acrylate Ethylenically unsaturated group-containing compound 3: n-butyl acrylate
<エチレン性不飽和基含有熱重合開始剤>
エチレン性不飽和基含有熱重合開始剤1:ビス(2-メチル-2-プロペニル)パーオキシジカーボネート 10時間半減期温度 39℃
エチレン性不飽和基含有熱重合開始剤2:ジアリルパーオキシジカーボネート 10時間半減期温度 39℃
エチレン性不飽和基含有熱重合開始剤3:ビス(2-メチル-2-プロペニロキシエチルパーオキシ)ジカーボネート 10時間半減期温度 44℃。
<Ethylenically unsaturated group-containing thermal polymerization initiator>
Ethylenically unsaturated group-containing thermal polymerization initiator 1: bis (2-methyl-2-propenyl) peroxydicarbonate 10 hours half-life temperature 39 ° C
Ethylenically unsaturated group-containing thermal polymerization initiator 2: diallyl peroxydicarbonate 10 hours half-life temperature 39 ° C
Ethylenically unsaturated group-containing thermal polymerization initiator 3: bis (2-methyl-2-propenyloxyethylperoxy) dicarbonate 10 hours half-life temperature 44 ° C.
(D)成分
<熱分解型発泡剤兼エチレン性不飽和基含有熱重合開始剤>
2,2’-アゾビス[N-(2-プロペニル)-2-メチルプロピオンアミド] 10時間半減期温度 96℃。
Component (D) <Pyrolytic foaming agent and ethylenically unsaturated group-containing thermal polymerization initiator>
2,2′-Azobis [N- (2-propenyl) -2-methylpropionamide] 10 hour half-life temperature 96 ° C.
その他の成分
<無機成分>
ガラス粉末:SnO-P2O5系ガラス“KF9079”(旭硝子(株)製)、軟化点340℃、平均粒径0.2μm
導電性粒子:白色導電性粉末“ET-500W”(球状の酸化チタンを核として、SnO2/Sb導電層を被覆したもの、石原産業(株)製)、比表面積6.9m2/g、密度4.6g/cm3、平均粒径0.2μm。
Other ingredients <Inorganic ingredients>
Glass powder: SnO—P 2 O 5 glass “KF9079” (manufactured by Asahi Glass Co., Ltd.), softening point 340 ° C., average particle size 0.2 μm
Conductive particles: White conductive powder “ET-500W” (coated with SnO 2 / Sb conductive layer using spherical titanium oxide as a core, manufactured by Ishihara Sangyo Co., Ltd.), specific surface area 6.9 m 2 / g, The density is 4.6 g / cm 3 and the average particle size is 0.2 μm.
<有機成分>
バインダー:ポリ(メタクリル酸iso-ブチル)fine powder, [h]=0.60(和光純薬工業(株)社製)
ポリスチレン粒子:メガビーズNISTトレーサブル粒子径標準粒子、10.0μm
溶媒:テルピネオール(和光純薬工業(株)社製)。
<Organic component>
Binder: Poly (iso-butyl methacrylate) fine powder, [h] = 0.60 (manufactured by Wako Pure Chemical Industries, Ltd.)
Polystyrene particles: Megabeads NIST traceable particle size standard particles, 10.0 μm
Solvent: Terpineol (manufactured by Wako Pure Chemical Industries, Ltd.).
評価方法
<電子放出源表面亀裂幅の観察>
光学顕微鏡を用い、電子放出源表面の亀裂の有無を確認した。さらに走査型電子顕微鏡(株式会社日立製作所製S4800)により、倍率1,000~20,000倍にて電子放出源の観察を行い、亀裂幅を測定した。亀裂幅は観察された亀裂の最も幅が広い部分とした。
Evaluation method <Observation of electron emission source surface crack width>
The presence or absence of cracks on the surface of the electron emission source was confirmed using an optical microscope. Further, the electron emission source was observed with a scanning electron microscope (S4800, manufactured by Hitachi, Ltd.) at a magnification of 1,000 to 20,000, and the crack width was measured. The crack width was the widest part of the observed crack.
<電子放出源に生じた亀裂面からのカーボンナノチューブの突出長さの観察>
走査型電子顕微鏡(株式会社日立製作所製S4800)により、倍率1,000~20,000倍にて観察し、亀裂面から突出しているカーボンナノチューブの長さをランダムに20点測長し、その平均突出長さを算出した。
<Observation of projecting length of carbon nanotube from crack surface in electron emission source>
Observation with a scanning electron microscope (S4800, manufactured by Hitachi, Ltd.) at a magnification of 1,000 to 20,000 times, the length of carbon nanotubes protruding from the crack surface was randomly measured at 20 points, and the average The protrusion length was calculated.
<電界強度の測定>
真空度を5.0×10-4Paにした真空チャンバー内に、電子放出源が形成された基板と、ITO薄膜を形成したソーダライムガラス基板上に厚み5μmの蛍光体層(P22、化成オプトニクス(株)社製)を形成した基板を、100μmのスペーサーを挟んで対向させ、電圧印可装置(菊水電子工業(株)製耐電圧/絶縁抵抗試験器TOS9201)によって10V/秒で電圧印加した。得られた電流電圧曲線(最大電流値10mA/cm2)から電流密度が所定の電流値に達する電界強度を求めた。所定の電流値とは各実施例および比較例に記載の値である。
<Measurement of electric field strength>
In a vacuum chamber with a vacuum degree of 5.0 × 10 −4 Pa, a phosphor layer having a thickness of 5 μm is formed on a substrate on which an electron emission source is formed and a soda lime glass substrate on which an ITO thin film is formed (P22, Chemical Opt). The substrate on which the Nix Corporation was formed was opposed with a spacer of 100 μm in between, and a voltage was applied at 10 V / second by a voltage applying device (withstand voltage / insulation resistance tester TOS9201 manufactured by Kikusui Electronics Co., Ltd.). . The electric field strength at which the current density reached a predetermined current value was determined from the obtained current-voltage curve (maximum current value 10 mA / cm 2 ). The predetermined current value is a value described in each example and comparative example.
<発光の均一性観察>
真空度を5.0×10-4Paにした真空チャンバー内に、ITO基板上に1cm×1cm角の電子放出素子が形成された背面基板と、ITO基板上に厚み5μmの蛍光体層(P22)を形成した前面基板を、100μmのスペーサーを挟んで対向させ、電圧印可装置(菊水電子工業(株)製耐電圧/絶縁抵抗試験器TOS9201)によって所定の電流値となる電圧を印加して、前面基板を発光させた。所定の電流値とは各実施例および比較例に記載の値である。発光面積はCCDカメラによって発光像を取り込み、1cm×1cm角の電子放出素子内での発光部分割合を測定し、数値化した。このとき、発光面積が80%以上のものを最良(A)、50%以上80%未満のものを良(B)、30%以上50%未満のものを可(C)、30%未満のものを不可(D)とした。
<Observation of light emission uniformity>
In a vacuum chamber with a degree of vacuum of 5.0 × 10 −4 Pa, a back substrate having a 1 cm × 1 cm square electron-emitting device formed on an ITO substrate, and a phosphor layer (P22) having a thickness of 5 μm on the ITO substrate. The front substrate on which the substrate is formed is opposed with a spacer of 100 μm, and a voltage having a predetermined current value is applied by a voltage application device (withstand voltage / insulation resistance tester TOS9201 manufactured by Kikusui Electronics Co., Ltd.) The front substrate was made to emit light. The predetermined current value is a value described in each example and comparative example. The light emission area was digitized by taking a light emission image with a CCD camera and measuring the proportion of light emission in a 1 cm × 1 cm square electron-emitting device. At this time, the light emission area of 80% or more is best (A), 50% or more and less than 80% is good (B), 30% or more and less than 50% is acceptable (C), and less than 30% Was not allowed (D).
<残留性化合物の粒径調整>
本発明の電子放出源用ペーストに用いた金属塩は以下の方法により粒径の調整を行った。容積500mlのジルコニア製容器に金属塩20g、溶媒80gを秤量後、0.3mmφのジルコニアビーズ(東レ(株)製トレセラム(商品名))をそこに加え、遊星式ボールミル(フリッチュ・ジャパン(株)製遊星型ボールミルP-5)にて粉砕した。ジルコニアビーズを取り除いた粉砕溶液を乾燥し、平均粒径1~3μmの金属塩を得た。
<Adjustment of particle size of residual compound>
The particle diameter of the metal salt used in the electron emission source paste of the present invention was adjusted by the following method. After weighing 20 g of metal salt and 80 g of solvent in a 500 ml zirconia container, 0.3 mmφ zirconia beads (Torayserum (trade name) manufactured by Toray Industries, Inc.) are added thereto, and a planetary ball mill (Fritsch Japan Co., Ltd.) is added. It was pulverized with a planetary ball mill P-5). The pulverized solution from which zirconia beads were removed was dried to obtain a metal salt having an average particle diameter of 1 to 3 μm.
実施例1
2層カーボンナノチューブを直径3mmのジルコニアボールを用いたボールミルにより粉砕し、有機バインダー、溶媒、ガラス粉末、導電性粒子、残留性化合物、熱分解型発泡剤を表1に示す組成比で添加して3本ローラーにて混練し、電子放出源用ペーストを作製した。
Example 1
Double-walled carbon nanotubes were pulverized by a ball mill using zirconia balls having a diameter of 3 mm, and an organic binder, solvent, glass powder, conductive particles, residual compound, and pyrolytic foaming agent were added at a composition ratio shown in Table 1. The mixture was kneaded with three rollers to prepare an electron emission source paste.
次に、ガラス基板上にITOをスパッタ法により成膜してカソード電極を形成した。そのカソード電極上に電子放出源用ペーストをSUS200メッシュのスクリーン版を用いたスクリーン印刷法によって1cm×1cm角の塗膜を印刷した後、熱風乾燥機中100℃で5分間乾燥した。得られた電子放出源用ペースト塗膜を大気中450℃で焼成して電子放出源を得た。得られた電子放出源の亀裂幅は10.5μm、カーボンナノチューブの突出長さは2.9μmであった。また、1mA/cm2に達する電界強度は3.5V/μm、そのときの発光面積は82%であった。 Next, a cathode electrode was formed by depositing ITO on a glass substrate by sputtering. A 1 cm × 1 cm square coating film was printed on the cathode electrode by a screen printing method using a SUS200 mesh screen plate, and then dried at 100 ° C. for 5 minutes in a hot air dryer. The obtained paste film for electron emission source was baked at 450 ° C. in the atmosphere to obtain an electron emission source. The resulting electron emission source had a crack width of 10.5 μm and a carbon nanotube protrusion length of 2.9 μm. The electric field intensity reaching 1 mA / cm 2 was 3.5 V / μm, and the light emission area at that time was 82%.
実施例2~16
実施例1と同様に、表1~2に示す組成比の電子放出源用ペーストおよび電子放出源を作製した。亀裂幅、カーボンナノチューブの突出長さ、1mA/cm2に達する電界強度および発光面積の測定結果を表1~2に示す。実施例2~10は残留性化合物の種類を変えたもの、実施例11と12は熱分解型発泡剤の種類を変えたもの、実施例13と14は残留性化合物の含有量を変えたもの、実施例15と16は複数の残留性化合物を用いたものである。いずれの場合も電子放出源表面に亀裂、および亀裂面から突出長さが0.5μm以上のカーボンナノチューブが観察され、活性化工程なしで電子放出を観察することができた。なお、(B)熱分解型発泡剤粒子や(C)成分の種類によらず良好な結果が得られたが、(C)成分である残留性化合物として金属塩を用いたときの結果はより良好であり、金属炭酸塩を用いたときの結果は特に良好であった。
Examples 2 to 16
As in Example 1, electron emission source pastes and electron emission sources having the composition ratios shown in Tables 1 and 2 were produced. Tables 1 and 2 show the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field intensity reaching 1 mA / cm 2 , and the emission area. Examples 2 to 10 were obtained by changing the type of the residual compound, Examples 11 and 12 were obtained by changing the type of the pyrolytic foaming agent, and Examples 13 and 14 were obtained by changing the content of the residual compound. Examples 15 and 16 use a plurality of residual compounds. In both cases, cracks on the surface of the electron emission source and carbon nanotubes having a protrusion length of 0.5 μm or more from the crack surface were observed, and electron emission could be observed without an activation step. In addition, although the favorable result was obtained irrespective of the kind of (B) thermal decomposition type foaming agent particle and (C) component, the result when using a metal salt as a residual compound which is (C) component is more It was good and the results were particularly good when using metal carbonates.
比較例1
2層カーボンナノチューブを直径3mmのジルコニアボールを用いたボールミルにより粉砕し、有機バインダー、溶媒、ガラス粉末、導電性粒子、熱分解型発泡剤を表3に示す組成比で添加して3本ローラーにて混練し、電子放出源用ペーストを作製した。
Comparative Example 1
Double-walled carbon nanotubes are pulverized by a ball mill using zirconia balls having a diameter of 3 mm, and an organic binder, a solvent, glass powder, conductive particles, and a pyrolytic foaming agent are added at a composition ratio shown in Table 3 to form a three-roller. And kneaded to prepare an electron emission source paste.
次に、ガラス基板上にITOをスパッタ法により成膜してカソード電極を形成した。そのカソード電極上に電子放出源用ペーストをSUS200メッシュのスクリーン版を用いたスクリーン印刷法によって1cm×1cm角の塗膜を印刷した後、熱風乾燥機中100℃で5分間乾燥した。得られた電子放出源用ペースト塗膜を大気中450℃で焼成して電子放出源を得た。得られた電子放出源の亀裂およびカーボンナノチューブの突出は観察されなかった。また、1mA/cm2に達する電界強度は15V/μmを超えており、そのときの発光面積は3%であった。 Next, a cathode electrode was formed by depositing ITO on a glass substrate by sputtering. A 1 cm × 1 cm square coating film was printed on the cathode electrode by a screen printing method using a SUS200 mesh screen plate, and then dried at 100 ° C. for 5 minutes in a hot air dryer. The obtained paste film for electron emission source was baked at 450 ° C. in the atmosphere to obtain an electron emission source. Cracks in the obtained electron emission source and protrusions of carbon nanotubes were not observed. The electric field intensity reaching 1 mA / cm 2 exceeded 15 V / μm, and the light emission area at that time was 3%.
比較例2~5
比較例1と同様に、表3に示す組成比の電子放出源用ペーストおよび電子放出源を作製した。亀裂幅、カーボンナノチューブの突出長さ、1mA/cm2に達する電界強度および発光面積の測定結果を表3に示す。比較例2~4は熱分解型発泡剤を加えずに残留性化合物のみを用いたものであり、亀裂の幅が小さくカーボンナノチューブの突出長さも短かった。そして、1mA/cm2に達する電界強度が高めであり、発光の均一性もあまり良好ではなかった。また、比較例5はポリスチレン粒子を加えたものであり、電子放出源内に孔が連続的につながった空隙が形成された。従って、比較例5の亀裂幅は空隙の幅を測定したものである。見た目の亀裂の幅は大きいがカーボンナノチューブの突出長さが短かった。そして、1mA/cm2に達する電界強度が高く、発光の均一性もあまり良好ではなかった。
Comparative Examples 2-5
Similarly to Comparative Example 1, an electron emission source paste and an electron emission source having the composition ratio shown in Table 3 were produced. Table 3 shows the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field strength reaching 1 mA / cm 2 , and the light emitting area. In Comparative Examples 2 to 4, only the residual compound was used without adding the pyrolytic foaming agent, and the width of the crack was small and the protruding length of the carbon nanotube was short. The electric field strength reaching 1 mA / cm 2 was high, and the uniformity of light emission was not very good. In Comparative Example 5, polystyrene particles were added, and voids in which holes were continuously connected were formed in the electron emission source. Therefore, the crack width of Comparative Example 5 is a measurement of the width of the gap. Although the width of the apparent crack was large, the protruding length of the carbon nanotube was short. The electric field strength reaching 1 mA / cm 2 was high, and the uniformity of light emission was not very good.
実施例17
電子放出源用ペーストは以下の要領で作製した。容積500mlのジルコニア製容器に多層カーボンナノチューブ1g、ガラス粉末8g、導電性粒子6g、バインダー20g、溶媒65gを秤量後し、0.3mmφのジルコニアビーズ(東レ(株)製トレセラム(商品名))をそこに加え、遊星式ボールミル(フリッチュ・ジャパン(株)製遊星型ボールミルP-5)にて100rpmで予備分散した。ジルコニアビーズを取り除いた混合物を3本ローラーにて混練した。次に、表4に示す組成比となるように、熱分解型発泡剤1、熱重合開始剤1およびエチレン性不飽和基含有化合物1を加え、さらに3本ローラーにて混練し、電子放出源用ペーストとした。これらは電子放出源用ペースト中に合わせて6wt%となるようにした。次に作製した電子放出源用ペーストを、ITO薄膜を形成したソーダライムガラス基板上に、SUS325メッシュのスクリーン版を用いて、5mm×5mmの角型パターンになるように印刷した。100℃で10分乾燥後、大気中にて450℃で焼成して電子放出源を得た。得られた電子放出源表面に亀裂、および亀裂面から突出長さが0.5μm以上のカーボンナノチューブが観察され、活性化工程なしで電子放出を観察することができた。また、0.1mA/cm2に達する電界強度は8.6V/μm、そのときの発光均一性は最良(A)であった。
Example 17
The electron emission source paste was prepared as follows. After weighing 1 g of multi-walled carbon nanotubes, 8 g of glass powder, 6 g of conductive particles, 20 g of binder, and 65 g of solvent in a zirconia container having a capacity of 500 ml, 0.3 mmφ zirconia beads (Traceram (trade name) manufactured by Toray Industries, Inc.) In addition, it was predispersed at 100 rpm with a planetary ball mill (planet type ball mill P-5 manufactured by Fritsch Japan KK). The mixture from which the zirconia beads were removed was kneaded with three rollers. Next, the thermal decomposition
実施例18~23
実施例17と同様に、表4に示す組成比の電子放出源用ペーストおよび電子放出源の作製と各評価を行った。実施例18~19では(B)熱分解型発泡剤と、(C)成分である熱重合開始剤およびエチレン性不飽和基含有化合物を用いた。実施例20~22では(B)熱分解型発泡剤と、(C)成分であるエチレン性不飽和基含有熱重合開始剤を用いた。実施例23では(D)成分である熱分解型発泡剤兼エチレン性不飽和基含有熱重合開始剤を用いた。これらは電子放出源用ペースト中の含有量が合わせて6wt%となるようにした。いずれの場合も電子放出源表面に亀裂、および亀裂面から突出長さが0.5μm以上のカーボンナノチューブが観察され、活性化工程なしで電子放出を観察することができた。電界強度と発行の均一性の評価結果は表4の通りであった。
Examples 18-23
In the same manner as in Example 17, an electron emission source paste and an electron emission source having the composition ratios shown in Table 4 were prepared and evaluated. In Examples 18 to 19, (B) a thermally decomposable foaming agent, (C) component thermal polymerization initiator and ethylenically unsaturated group-containing compound were used. In Examples 20 to 22, (B) a thermally decomposable foaming agent and (C) component ethylenically unsaturated group-containing thermal polymerization initiator were used. In Example 23, the thermal decomposition initiator / ethylenically unsaturated group-containing thermal polymerization initiator as component (D) was used. The total content of these in the electron emission source paste was 6 wt%. In both cases, cracks on the surface of the electron emission source and carbon nanotubes having a protrusion length of 0.5 μm or more from the crack surface were observed, and electron emission could be observed without an activation step. Table 4 shows the evaluation results of the electric field strength and the uniformity of issuance.
実施例24~38
実施例17と同様に、表5~7に示す組成比の電子放出源用ペーストおよび電子放出源の作製と各評価を行った。実施例24~28では(B)熱分解型発泡剤と、(C)成分である熱重合開始剤、エチレン性不飽和基含有化合物および残留性化合物を用いた。実施例29~33では(B)熱分解型発泡剤と、(C)成分であるエチレン性不飽和基含有熱重合開始剤および残留性化合物を用いた。実施例34~38では(C)成分である残留性化合物、および(D)成分である熱分解型発泡剤兼エチレン性不飽和基含有熱重合開始剤を用いた。これらのうち残留性化合物以外の成分は電子放出源用ペースト中の含有量が合わせて6wt%となるようにした。また、残留性化合物はペースト中の含有量が9wt%となるように加えた。いずれの場合も電子放出源表面に亀裂、および亀裂面から突出長さが0.5μm以上のカーボンナノチューブが観察され、活性化工程なしで電子放出を観察することができた。電界強度と発光均一性の評価結果は表5~7の通りであった。
Examples 24-38
In the same manner as in Example 17, an electron emission source paste and an electron emission source having the composition ratios shown in Tables 5 to 7 were prepared and evaluated. In Examples 24 to 28, (B) a thermal decomposition type foaming agent, (C) component thermal polymerization initiator, ethylenically unsaturated group-containing compound and residual compound were used. In Examples 29 to 33, (B) a thermally decomposable foaming agent and (C) component ethylenically unsaturated group-containing thermal polymerization initiator and residual compound were used. In Examples 34 to 38, the residual compound as component (C) and the thermal decomposable foaming agent and ethylenically unsaturated group-containing thermal polymerization initiator as component (D) were used. Among these, the components other than the residual compounds were combined so that the content in the electron emission source paste was 6 wt%. Further, the residual compound was added so that the content in the paste was 9 wt%. In both cases, cracks on the surface of the electron emission source and carbon nanotubes having a protrusion length of 0.5 μm or more from the crack surface were observed, and electron emission could be observed without an activation step. The evaluation results of the electric field intensity and the light emission uniformity are as shown in Tables 5 to 7.
比較例6
電子放出源用ペーストは以下の要領で作製した。容積500mlのジルコニア製容器に多層カーボンナノチューブ1g、ガラス粉末8g、導電性粒子6g、バインダー20g、溶媒65gを秤量後し、0.3mmφのジルコニアビーズ(東レ(株)製トレセラム(商品名))をそこに加え、遊星式ボールミル(フリッチュ・ジャパン(株)製遊星型ボールミルP-5)にて100rpmで予備分散した。ジルコニアビーズを取り除いた混合物を3本ローラーにて混練した。次に、熱分解型発泡剤1を電子放出源用ペースト中の含有量が6wt%となるように加え、さらに3本ローラーにて混練し、電子放出源用ペーストとした。次に作製した電子放出源用ペーストを、ITO薄膜を形成したソーダライムガラス基板上に、SUS325メッシュのスクリーン版を用いて、5mm×5mmの角型パターンになるように印刷した。100℃で10分乾燥後、大気中にて450℃で焼成して電子放出源を得た。得られた電子放出源表面は、空隙の壁面から突出するカーボンナノチューブの突出長さが0.1μm未満のカーボンナノチューブしか観察されなかった。また、0.1mA/cm2に達する電界強度は12.5V/μmであった。
Comparative Example 6
The electron emission source paste was prepared as follows. After weighing 1 g of multi-walled carbon nanotubes, 8 g of glass powder, 6 g of conductive particles, 20 g of binder, and 65 g of solvent in a zirconia container having a capacity of 500 ml, 0.3 mmφ zirconia beads (Traceram (trade name) manufactured by Toray Industries, Inc.) In addition, it was predispersed at 100 rpm with a planetary ball mill (planet type ball mill P-5 manufactured by Fritsch Japan KK). The mixture from which the zirconia beads were removed was kneaded with three rollers. Next, the
比較例7~10
比較例6と同様にして、表8に示す組成比の電子放出源用ペーストおよび電子放出源の作製と各評価を行った。比較例7~10では(B)熱分解型発泡剤および(D)熱分解型発泡剤として機能し、かつ、エチレン性不飽和基を有する熱重合開始剤のいずれも用いなかった。
Comparative Examples 7-10
In the same manner as in Comparative Example 6, an electron emission source paste and an electron emission source having the composition ratios shown in Table 8 were prepared and evaluated. In Comparative Examples 7 to 10, neither (B) a pyrolytic foaming agent nor (D) a thermal polymerization initiator having an ethylenically unsaturated group functioning as a pyrolytic foaming agent was used.
比較例9および10では、焼成により形成された空隙の壁面から突出するカーボンナノチューブの突出長さが0.1μm未満のカーボンナノチューブしか観察されず、電子放出は得られたものの0.1mA/cm2に達する電界強度が大きかった。比較例7および8では、16V/μmの電界強度を加えても電子放出が得られなかった。 In Comparative Examples 9 and 10, only a carbon nanotube with a protruding length of less than 0.1 μm of the carbon nanotube protruding from the wall surface of the void formed by firing was observed, and although electron emission was obtained, 0.1 mA / cm 2 The electric field strength to reach In Comparative Examples 7 and 8, no electron emission was obtained even when an electric field strength of 16 V / μm was applied.
実施例39~49
実施例1と同様に、表9~10に示す組成比の電子放出源用ペーストおよび電子放出源を作製した。亀裂幅、カーボンナノチューブの突出長さ、1mA/cm2に達する電界強度および発光面積の測定結果を表9~10に示す。実施例39~43は(B)熱分解型発泡剤および(C)成分である残留性化合物の含有量を変えたもの、実施例44~45は(C)成分の種類を変えたもの、実施例46~49は(B)熱分解型発泡剤粒子の平均粒径を変えたものである。いずれの場合も電子放出源表面に亀裂、および亀裂面から突出長さが0.5μm以上のカーボンナノチューブが観察され、活性化工程なしで電子放出を観察することができた。なお、(B)熱分解型発泡剤粒子の平均粒径によらず良好な結果が得られたが、6.0μm以上20μm以下であるときの結果はより良好であった。
Examples 39-49
Similarly to Example 1, electron emission source pastes and electron emission sources having the composition ratios shown in Tables 9 to 10 were produced. Tables 9 to 10 show the measurement results of the crack width, the protruding length of the carbon nanotube, the electric field intensity reaching 1 mA / cm 2 , and the light emitting area. Examples 39 to 43 were obtained by changing the content of the (B) pyrolytic foaming agent and the residual compound (C), and Examples 44 to 45 were obtained by changing the type of the component (C). Examples 46 to 49 are obtained by changing the average particle size of (B) pyrolytic foaming agent particles. In both cases, cracks on the surface of the electron emission source and carbon nanotubes having a protrusion length of 0.5 μm or more from the crack surface were observed, and electron emission could be observed without an activation step. In addition, although the favorable result was obtained irrespective of the average particle diameter of (B) thermal decomposition type foaming agent particle | grains, the result when it is 6.0 micrometers or more and 20 micrometers or less was more favorable.
実施例50
実施例42で用いた電子放出源用ペーストを、ITO薄膜を形成したソーダライムガラス基板上に、SUS325メッシュのスクリーン版を用いて、200μm×1000μmの微細パターンを印刷した。100℃で10分乾燥後、大気中にて450℃で焼成して電子放出源を得た。得られた電子放出源を基板と略垂直方向から500倍の倍率でSEM観察した写真を図6に示す。前記写真からMATLABを用いて、200μm×200μmに相当する電子放出源内の亀裂部の割合を計算したところ、12.6%であった。また、1mA/cm2に達する電界強度は1.7V/μmであり、微細パターンにおいても良好な電子放出特性を得ることができた。
Example 50
The electron emission source paste used in Example 42 was printed on a soda-lime glass substrate on which an ITO thin film was formed, using a SUS325 mesh screen plate to print a fine pattern of 200 μm × 1000 μm. After drying at 100 ° C. for 10 minutes, an electron emission source was obtained by firing at 450 ° C. in the air. FIG. 6 shows a photograph of the obtained electron emission source observed by SEM at a magnification of 500 times from a direction substantially perpendicular to the substrate. The ratio of cracks in the electron emission source corresponding to 200 μm × 200 μm was calculated from the photograph using MATLAB, and found to be 12.6%. The electric field strength reaching 1 mA / cm 2 was 1.7 V / μm, and good electron emission characteristics could be obtained even in a fine pattern.
1 電子放出源に生じた亀裂
2 突出したカーボンナノチューブ
3 亀裂幅
4 電子放出源
5 カソード基板
6 亀裂
7 突出したカーボンナノチューブ
1 Crack generated in
Claims (20)
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| KR101564456B1 (en) * | 2013-11-28 | 2015-10-29 | 고려대학교 산학협력단 | Field emitter device, method for fabricating paste, and method for forming thin film |
| JP2022552407A (en) * | 2019-10-18 | 2022-12-15 | ケアストリーム デンタル エルエルシー | Carbon nanotube-based cold cathodes for X-ray generation |
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| CN108400076B (en) * | 2018-01-30 | 2019-08-23 | 华东师范大学 | A method of vacuum filtration improves field emission performance of carbon nano tube film |
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| KR101564456B1 (en) * | 2013-11-28 | 2015-10-29 | 고려대학교 산학협력단 | Field emitter device, method for fabricating paste, and method for forming thin film |
| JP2022552407A (en) * | 2019-10-18 | 2022-12-15 | ケアストリーム デンタル エルエルシー | Carbon nanotube-based cold cathodes for X-ray generation |
| JP7778690B2 (en) | 2019-10-18 | 2025-12-02 | ケアストリーム デンタル エルエルシー | Carbon nanotube-based cold cathode for X-ray generation |
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