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WO2011106155A3 - Memory cell with silicon-containing carbon switching layer and methods for forming the same - Google Patents

Memory cell with silicon-containing carbon switching layer and methods for forming the same Download PDF

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Publication number
WO2011106155A3
WO2011106155A3 PCT/US2011/024162 US2011024162W WO2011106155A3 WO 2011106155 A3 WO2011106155 A3 WO 2011106155A3 US 2011024162 W US2011024162 W US 2011024162W WO 2011106155 A3 WO2011106155 A3 WO 2011106155A3
Authority
WO
WIPO (PCT)
Prior art keywords
forming
silicon
containing carbon
memory cell
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/024162
Other languages
French (fr)
Other versions
WO2011106155A2 (en
Inventor
Franz Kreupl
Jingyan Zhang
Huiwen Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk 3D LLC
Original Assignee
SanDisk 3D LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk 3D LLC filed Critical SanDisk 3D LLC
Priority to KR1020127022208A priority Critical patent/KR20130056205A/en
Priority to EP11703361.3A priority patent/EP2539936B1/en
Publication of WO2011106155A2 publication Critical patent/WO2011106155A2/en
Publication of WO2011106155A3 publication Critical patent/WO2011106155A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/023—Formation of switching materials, e.g. deposition of layers by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/041—Modification of switching materials after formation, e.g. doping
    • H10N70/043—Modification of switching materials after formation, e.g. doping by implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • H10N70/8845—Carbon or carbides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

A method of forming a memory cell is provided that includes forming a metal - insulator-metal (MIM) stack (27), the MIM stack including (a) a first conductive carbon layer (35); (b) a low-hydrogen, silicon - containing carbon layer (12) above the first conductive carbon layer; and (c) a second conductive carbon layer (37) above the low-hydrogen, silicon - containing carbon layer; and forming a steering element (14) coupled to the MIM stack.
PCT/US2011/024162 2010-02-24 2011-02-09 Memory cell with silicon-containing carbon switching layer and methods for forming the same Ceased WO2011106155A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020127022208A KR20130056205A (en) 2010-02-24 2011-02-09 Memory cell with silicon-containing carbon switching layer and methods for forming the same
EP11703361.3A EP2539936B1 (en) 2010-02-24 2011-02-09 Methods for forming a memory cell with silicon-containing carbon switching layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/711,810 US8237146B2 (en) 2010-02-24 2010-02-24 Memory cell with silicon-containing carbon switching layer and methods for forming the same
US12/711,810 2010-02-24

Publications (2)

Publication Number Publication Date
WO2011106155A2 WO2011106155A2 (en) 2011-09-01
WO2011106155A3 true WO2011106155A3 (en) 2011-11-03

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/024162 Ceased WO2011106155A2 (en) 2010-02-24 2011-02-09 Memory cell with silicon-containing carbon switching layer and methods for forming the same

Country Status (5)

Country Link
US (1) US8237146B2 (en)
EP (1) EP2539936B1 (en)
KR (1) KR20130056205A (en)
TW (1) TW201145632A (en)
WO (1) WO2011106155A2 (en)

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