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WO2011105317A1 - Dispositif à ondes acoustiques et son procédé de fabrication - Google Patents

Dispositif à ondes acoustiques et son procédé de fabrication Download PDF

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Publication number
WO2011105317A1
WO2011105317A1 PCT/JP2011/053631 JP2011053631W WO2011105317A1 WO 2011105317 A1 WO2011105317 A1 WO 2011105317A1 JP 2011053631 W JP2011053631 W JP 2011053631W WO 2011105317 A1 WO2011105317 A1 WO 2011105317A1
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WO
WIPO (PCT)
Prior art keywords
dielectric film
idt electrode
wave device
sound velocity
acoustic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/053631
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English (en)
Japanese (ja)
Inventor
三浦　道雄
卓 藁科
松田　隆志
松田　聡
井上　和則
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Taiyo Yuden Co Ltd
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Taiyo Yuden Co Ltd
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Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Publication of WO2011105317A1 publication Critical patent/WO2011105317A1/fr
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Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation

Definitions

  • the present invention relates to an acoustic wave device that can be used for a filter element or an oscillator in, for example, a TV, a mobile phone, or a PHS.
  • a surface acoustic wave element (SAW device: Surface Acoustic Wave Device) is well known as one of the devices that apply elastic waves. This SAW device is used for various circuits in devices that process radio signals in the frequency band of 45 MHz to 2 GHz, for example, transmission bandpass filters, reception bandpass filters, local oscillation filters, antenna duplexers, IF filters, FM modulators, etc. It is done.
  • FIG. 1 is a diagram illustrating an example of pass characteristics of a 1-port resonator of a Love wave device.
  • FIG. 2 is a cross-sectional view illustrating a configuration example of a Love wave device.
  • the Love wave device shown in FIG. 2 includes a piezoelectric substrate 102 and an interelectrode dielectric layer 104 between the IDT electrode 103 (Cu) and the IDT electrode 103 provided on the piezoelectric substrate 102. Further, a diffusion prevention layer 106 and a dielectric layer 107 are provided so as to cover the IDT electrode 103 and the interelectrode dielectric layer 104.
  • FIG. 3 is a graph showing the result of calculating the Rayleigh wave response in the Love wave device shown in FIG. 2 by the finite element method. In the graph of FIG.
  • the horizontal axis represents the film thickness of Cu used as an electrode material
  • the vertical axis represents the magnitude of the Rayleigh wave response.
  • the substrate material at this time is Y-cut X-propagating LiNbO 3 .
  • the graph shows that when the Cu film thickness (the film thickness of the IDT electrode 103) is about 150 nm, the magnitude of the Rayleigh wave response becomes zero. That is, the graph shows that the magnitude of the Rayleigh wave response suddenly increases regardless of whether the Cu film thickness is thicker or thinner than 150 nm.
  • the thickness of the IDT electrode By increasing the thickness of the IDT electrode, the cross-sectional area of the electrode increases, and the electrode resistance can be reduced.
  • the Cu film thickness is fixed to 150 nm in the Love wave device having the structure shown in FIG. That is, it is difficult to use a means for reducing the loss by increasing the thickness of the IDT electrode 103.
  • the optimum film thickness of the IDT electrode that can suppress the Rayleigh wave response varies depending on the substrate used, the material of the IDT electrode, etc.
  • the Rayleigh wave response is the same as in FIG. 3 even when other materials are used. You can draw a graph with values.
  • the film thickness of the IDT electrode is limited by the Rayleigh wave response characteristics as well in the elastic wave device other than the Love wave device. The unnecessary response that limits the film thickness of the IDT electrode is not limited to the Rayleigh wave response.
  • an object of the present invention is to provide an elastic wave device capable of increasing the film thickness of the IDT electrode while suppressing an unnecessary wave response.
  • the acoustic wave device disclosed in the present application includes a piezoelectric substrate, an IDT electrode including a plurality of electrode fingers arranged side by side on the piezoelectric substrate, and a first dielectric film formed between the plurality of electrode fingers. A second dielectric film covering the IDT electrode and the first dielectric film, and the first dielectric formed between the plurality of electrode fingers and on the first dielectric film. And a high sound velocity layer that is a medium having a higher sound velocity than the body.
  • an elastic wave device capable of increasing the film thickness of the IDT electrode while suppressing unnecessary wave response.
  • FIG. 4B is a top perspective view of the acoustic wave device according to the present embodiment. It is a graph which shows the result of having calculated the magnitude of the Rayleigh wave response of the elastic wave device in this embodiment by the finite element method.
  • 3 is a graph showing pass characteristics of a resonator when the Love wave device having the configuration shown in FIG.
  • FIG. 2 is operated as a one-port resonator. It is a figure which shows the example of a manufacturing method of the elastic wave device of this embodiment.
  • FIG. 3 is a diagram showing an example of a method for manufacturing the acoustic wave device shown in FIG. It is a figure which shows the structural example of a communication apparatus.
  • FIG. 4A is a cross-sectional view showing a configuration example of an acoustic wave device in the present embodiment.
  • FIG. 4B is a top perspective view of the acoustic wave device according to the present embodiment.
  • FIG. 4A shows a part of a cross section taken along line AA of FIG. 4B.
  • an IDT electrode 3 including a plurality of electrode fingers arranged side by side on a piezoelectric substrate 2 and a first dielectric formed between the plurality of electrode fingers.
  • a body membrane 4 is provided.
  • a high sound velocity layer 5 is formed between the plurality of electrode fingers and on the first dielectric film 4.
  • the high sound velocity layer 5 is formed on the upper portion of the first dielectric film 4.
  • the high sound velocity layer 5 is a medium having a higher sound velocity than the first dielectric 4.
  • a second dielectric film 7 is provided so as to cover the IDT electrode 3 and the first dielectric film 4.
  • a diffusion prevention layer 6 (an example of an additional layer) is provided between the second dielectric 7 and the IDT electrode 3 and the high sound velocity layer 5.
  • the diffusion prevention layer 6 is a medium having a higher sound velocity than the second dielectric 7.
  • a high acoustic velocity layer 5 is provided on the first dielectric film 4 between a plurality of electrode fingers of the IDT electrode 3, thereby allowing an unnecessary wave response such as a Rayleigh wave to respond.
  • the inventors have found that the properties change. That is, it is found that the thickness value of the IDT electrode 3 most suitable for suppressing the unwanted wave response is shifted by inserting the high sound velocity layer 5 that is a medium having a higher sound velocity than the first dielectric film 4. It was done. That is, in the space sandwiched between the electrode fingers of the IDT electrode 3, a medium having a higher sound speed than the first dielectric is provided on the first dielectric film 4, thereby balancing the sound speed near the IDT electrode 3. Can take. As a result, in the acoustic wave device 1, it is possible to increase the film thickness of the IDT electrode 3 while suppressing the unwanted wave response. As a result, low loss can be realized.
  • the total thickness of the first dielectric film 4 and the high sound velocity layer 5 is preferably the same as the thickness of the IDT electrode 3.
  • the upper surface of the high sound velocity layer 5 and the upper surface of the IDT electrode 3 are formed to be the same surface. Therefore, the layer formed on the IDT electrode 3 can be easily flattened.
  • the same thickness does not need to be exactly the same, and for example, manufacturing errors are allowed.
  • the diffusion prevention layer 6 mainly composed of a material with a higher sound velocity than the second dielectric 7, the IDT electrode 3 and the first The dielectric film 4 or the high sound velocity layer 5 can be protected.
  • the diffusion prevention layer 6 can be omitted.
  • the material of the high sound velocity layer 5 can include, for example, SiC, AlN, alumina, or diamond.
  • the material of the diffusion preventing layer 6 can also include, for example, SiC, AlN, alumina, or diamond. Note that the material of the high sound velocity layer 5 is not limited to a specific material as long as the sound velocity of the elastic waves in the high sound velocity layer 5 is higher than the sound velocity of the elastic waves in the first dielectric film 4. Similarly, the material of the diffusion preventing layer 6 is not limited to a specific material. Further, the sound velocity of the high sound velocity layer 5, the sound velocity of the first dielectric film 4, and the sound velocity of the diffusion prevention layer 6 are not necessarily determined only by the material, and may be affected by the structure, temperature, and the like. In the present embodiment, as an example, the high sound velocity layer 5 is formed by disposing a high sound velocity material on the first dielectric film 4 at a position sandwiched between the electrode fingers of the IDT electrode. .
  • the IDT electrode 3 can be mainly composed of Cu, for example, and the first dielectric film 4 and the second dielectric film 7 can be composed mainly of SiO 2 , for example.
  • the piezoelectric substrate 2 can be a LiNbO 3 substrate, for example.
  • the IDT electrode 3 has alternating electrode fingers (strip) connected to the input IN side electrode and electrode fingers (strip) connected to the output OUT side electrode. Are arranged at equal intervals. Reflectors 8 are disposed on both sides of the IDT electrode 3 in a direction perpendicular to the direction in which the electrode fingers extend.
  • the elastic wave device 1 operates as a resonator because the elastic wave propagates between the reflectors 8 in a direction perpendicular to the electrode fingers.
  • An IDT Inter Digital Transducer
  • the elastic wave device shown in FIGS. 4A and 4B can be used, for example, as a device that uses a Love wave, which is a type of surface acoustic wave.
  • the said acoustic wave device is an example of a 1 port type
  • the arrangement of the electrode fingers is not limited to the example shown in FIG. 4B. For example, a configuration in which the intersection width between adjacent electrode fingers is weighted with an apodization may be used.
  • the elastic wave device according to the present invention is not limited to a device using a Love wave, and can be used as a device using a boundary acoustic wave.
  • FIG. 5 is a graph showing the result of calculating the magnitude of the Rayleigh wave response of the acoustic wave device in this embodiment shown in FIGS. 4A and 4B by the finite element method. This calculation is based on the assumption that SiC is formed as the high sound velocity layer 5 with a film thickness of 20 nm. This calculation assumes that the piezoelectric substrate 2 is a rotating Y-plate LiNbO 3 substrate and the Cu IDT electrode 3 is formed on the piezoelectric substrate 2.
  • the plot of the Rayleigh wave response of the elastic wave device in the present embodiment is indicated by a triangle.
  • the Rayleigh wave response plot of the Love wave device shown in FIG. 2 is indicated by a diamond.
  • the plot representing the magnitude of the Rayleigh wave response of the acoustic wave device of the present embodiment is shifted to the right as a whole compared to the comparative example.
  • the magnitude of the Rayleigh wave response is 0 when the Cu film thickness is about 200 nm. That is, by introducing the high sound velocity layer 5, the thickness of the IDT electrode 3 can be increased by about 50 nm.
  • the electrode resistance of the IDT electrode 3 can be reduced, and consequently, the loss as an acoustic wave device can be reduced.
  • the current density at the IDT electrode 3 can be reduced, a device that is strong against application of high power can be realized.
  • the thickness of the entire acoustic wave device can be reduced.
  • FIG. 6 is a graph showing the pass characteristics of a resonator when the Love wave device having the configuration shown in FIG. 2 is operated as a one-port resonator.
  • the high-order unnecessary response suddenly increases.
  • the configuration of the present embodiment is more desirable than the configuration of FIG. 2 from the viewpoint of suppressing unnecessary responses.
  • FIG. 7 is a diagram showing an example of a method for manufacturing the acoustic wave device of the present embodiment.
  • the first dielectric film 4 is formed on the entire upper surface of the piezoelectric substrate 2.
  • the substrate material of the piezoelectric substrate 2 for example, Y-cut X propagation LiNbO 3 can be used.
  • the substrate material LiNbO 3 having another crystal orientation may be used, or another piezoelectric single crystal may be used.
  • transparent SiO 2 can be used for example.
  • a high sound velocity layer 5 is formed on the entire upper surface of the first dielectric film 4.
  • a SiC layer is formed.
  • a method such as printing, vapor deposition, or sputtering can be used.
  • a resist pattern 11 is formed on the high sound velocity layer 5 by using a photolithography technique.
  • the resist pattern 11 is a pattern for forming the IDT electrode 3.
  • the resist pattern is formed in the remaining area of the upper surface of the piezoelectric substrate 2 except for the area where the IDT electrode 3 is formed.
  • the high sound velocity layer 5 is etched. Thereby, the high sound velocity layer 5 other than the region located under the resist pattern 11 is removed. Further, as shown in FIG. 7 (e), the first dielectric film 4 is also removed by etching except for the region located under the resist pattern 11.
  • an electrode film for forming the IDT electrode 3 is formed.
  • the electrode film can be formed by sputtering or vapor deposition, for example.
  • the electrode film is applied to the region where the first dielectric film 4 is removed, that is, the region where the IDT electrode 3 is formed, and the resist pattern 11.
  • the film thickness of the electrode film is preferably formed so as to be substantially the same as the total thickness of the first dielectric film 4 and the high acoustic velocity layer 5.
  • the resist pattern 11 is removed by lift-off.
  • the remaining IDT electrode 3 and the surface of the high sound velocity layer 5 may be surface-treated so as to be flat. In this way, the IDT electrode 3 is formed by the lift-off method. Further, a structure in which the first dielectric film 4 whose upper surface is covered with the high sound velocity layer 5 is located between the electrode fingers of the IDT electrode 3 is obtained.
  • a diffusion preventing film 6 made of SiC and a second dielectric film 7 made of SiO 2 are formed so as to cover the IDT electrode 3 and the high sound velocity layer 5. Thereby, the acoustic wave device having the configuration shown in FIGS. 4A and 4B is obtained.
  • the first dielectric film 4 of the acoustic wave device when transparent SiO 2 is used for the first dielectric film 4 of the acoustic wave device, the first dielectric film 4 is formed on the piezoelectric substrate 2 as shown in FIG. In this state, a fine resist pattern cannot be formed by photolithography. Therefore, as shown in FIG. 2, when an acoustic wave device having a configuration in which the high sound velocity layer 5 is not formed is formed, a light shielding film such as Si or metal is formed on the first dielectric film 4. It is necessary to form a resist pattern thereon.
  • FIG. 8 is a diagram showing an example of a method for manufacturing the acoustic wave device shown in FIG.
  • a light shielding film 112 such as Si is formed on the entire upper surface of the dielectric film 3 (see FIG. FIG. 8 (b)).
  • a resist pattern 111 is formed on the light shielding film 112 (FIG. 8C), and the light shielding film 112 etching (FIG. 8D) and the first dielectric layer 104 etching (FIG. 8E) are performed. .
  • An electrode film of the IDT electrode 103 is formed on the region where the first dielectric layer 104 has been removed by etching and on the resist pattern 111 (8 (f)). Then, the resist pattern 111 and the electrode film placed thereon are removed by lift-off (FIG. 8 (g)). Here, a step of removing the light shielding film 112 (FIG. 8H) is required. After removing the light shielding film 112, the second dielectric layer 107 is formed (FIG. 8 (i)).
  • the light shielding film 112 provided for forming the resist pattern is not necessary in an actual device, and therefore needs to be removed before the second dielectric layer 107 is formed.
  • a light-shielding material such as SiC is used as the high acoustic velocity layer 5 formed on the first dielectric film 4, for example.
  • a filter, a module, or a communication device including the above acoustic wave device is also one embodiment of the present invention.
  • FIG. 9 is a diagram illustrating a configuration example of a communication device.
  • a communication module 60 for example, the elastic wave device shown in the above embodiment can be used.
  • the transmission terminal Tx of the communication module 60 is connected to the RFIC 53, and the reception terminal Rx is also connected to the RFIC 53.
  • the RFIC 53 is connected to the baseband IC 54.
  • the RFIC 53 can be formed of a semiconductor chip and other components.
  • the RFIC 53 is integrated with a reception circuit for processing a reception signal input from a reception terminal and a circuit including a transmission circuit for processing a transmission signal.
  • the baseband IC 54 can also be realized by a semiconductor chip and other parts.
  • the baseband IC 54 includes a circuit for converting the reception signal received from the reception circuit included in the RFIC 53 into an audio signal and packet data, and a transmission circuit included in the RFIC 53 that converts the audio signal and packet data into a transmission signal. Is integrated with the circuit for output.
  • output devices such as speakers and displays are connected to the baseband IC 54, for example, and output audio signals and packet data converted from reception signals by the baseband IC 54 to the user of the communication device 50. Can be recognized.
  • input devices included in the communication device 50 such as a microphone and a button are also connected to the baseband IC 54, and the baseband IC 54 can convert voice and data input from the user into transmission signals. . Note that the configuration of the communication device 50 is not limited to the example illustrated in FIG.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention porte sur un dispositif à ondes acoustiques qui permet d'augmenter l'épaisseur de film d'une électrode IDT tout en supprimant des réponses d'onde non voulues. Le dispositif à ondes acoustiques comprend : un substrat piézoélectrique (2) ; une électrode IDT (3) contenant de multiples doigts d'électrode disposés en une ligne sur le substrat piézoélectrique (2) ; un premier film diélectrique (4) formé entre les multiples doigts d'électrode ; un second film diélectrique (7) couvrant l'électrode IDT (3) et le premier film diélectrique (4) ; et une couche à grande vitesse (5), qui est un milieu ayant une vitesse plus élevée que celle du premier film diélectrique (4) et qui est formée entre les multiples doigts d'électrode sur la première couche diélectrique (4).
PCT/JP2011/053631 2010-02-26 2011-02-21 Dispositif à ondes acoustiques et son procédé de fabrication Ceased WO2011105317A1 (fr)

Applications Claiming Priority (2)

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JP2010-043035 2010-02-26
JP2010043035A JP2011182117A (ja) 2010-02-26 2010-02-26 弾性波デバイスおよびその製造方法

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WO2011105317A1 true WO2011105317A1 (fr) 2011-09-01

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110289827A (zh) * 2018-03-19 2019-09-27 株式会社村田制作所 弹性波装置
US11165409B2 (en) 2017-04-28 2021-11-02 Murata Manufacturing Co., Ltd. Acoustic wave device, filter, and composite filter device
WO2024027920A1 (fr) * 2022-08-05 2024-02-08 Huawei Technologies Co., Ltd. Procédé de fabrication d'un résonateur à ondes acoustiques de surface

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186866A (ja) * 1997-12-22 1999-07-09 Kyocera Corp 弾性表面波装置及びその製造方法
JP2004112748A (ja) * 2002-07-24 2004-04-08 Murata Mfg Co Ltd 弾性表面波装置及びその製造方法
WO2004114521A1 (fr) * 2003-06-17 2004-12-29 Murata Manufacturing Co., Ltd. Dispositif a ondes acoustiques de surface
WO2005083881A1 (fr) * 2004-03-02 2005-09-09 Murata Manufacturing Co., Ltd. Dispositif à onde acoustique de surface
JP2009077149A (ja) * 2007-09-20 2009-04-09 Fujitsu Ltd 弾性境界波装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186866A (ja) * 1997-12-22 1999-07-09 Kyocera Corp 弾性表面波装置及びその製造方法
JP2004112748A (ja) * 2002-07-24 2004-04-08 Murata Mfg Co Ltd 弾性表面波装置及びその製造方法
WO2004114521A1 (fr) * 2003-06-17 2004-12-29 Murata Manufacturing Co., Ltd. Dispositif a ondes acoustiques de surface
WO2005083881A1 (fr) * 2004-03-02 2005-09-09 Murata Manufacturing Co., Ltd. Dispositif à onde acoustique de surface
JP2009077149A (ja) * 2007-09-20 2009-04-09 Fujitsu Ltd 弾性境界波装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11165409B2 (en) 2017-04-28 2021-11-02 Murata Manufacturing Co., Ltd. Acoustic wave device, filter, and composite filter device
CN110289827A (zh) * 2018-03-19 2019-09-27 株式会社村田制作所 弹性波装置
CN110289827B (zh) * 2018-03-19 2023-03-14 株式会社村田制作所 弹性波装置
WO2024027920A1 (fr) * 2022-08-05 2024-02-08 Huawei Technologies Co., Ltd. Procédé de fabrication d'un résonateur à ondes acoustiques de surface

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