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WO2011103993A1 - Procédé pour déterminer une structure d'un matériau semi-conducteur présentant des propriétés électro-optiques prédéfinies, procédé pour sa fabrication ainsi que matériau semi-conducteur. - Google Patents

Procédé pour déterminer une structure d'un matériau semi-conducteur présentant des propriétés électro-optiques prédéfinies, procédé pour sa fabrication ainsi que matériau semi-conducteur. Download PDF

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Publication number
WO2011103993A1
WO2011103993A1 PCT/EP2011/000825 EP2011000825W WO2011103993A1 WO 2011103993 A1 WO2011103993 A1 WO 2011103993A1 EP 2011000825 W EP2011000825 W EP 2011000825W WO 2011103993 A1 WO2011103993 A1 WO 2011103993A1
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WO
WIPO (PCT)
Prior art keywords
photonic
band gap
semiconductor material
semiconductor
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/000825
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German (de)
English (en)
Inventor
Marius Peters
Benedikt BLÄSI
Jan Christoph Goldschmidt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to EP11704938A priority Critical patent/EP2539754A1/fr
Publication of WO2011103993A1 publication Critical patent/WO2011103993A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials

Definitions

  • the present invention relates to a method for predefined setting of electro-optical
  • the present invention relates to a method for producing a corresponding semiconductor material by introducing a photonic patterning with the predetermined lattice constant in the semiconductor material.
  • the predetermined have electro-optical properties specified.
  • photonic crystal lasers are known.
  • photonic structures are used to influence the spontaneous emission of the semiconductor material. and reach a lower laser threshold (see, for example, K. Forberich, "Organic Photonic Crystal Lasers, Dissertation Freiburg 2005).
  • Claim 8 relates to a method for producing a semiconductor material, while with claim 10, a correspondingly manufactured semiconductor material is specified.
  • the invention thus provides a method for determining a lattice constant a of a one-, two- or Three-dimensional photonic structuring of a semiconductor material with a predetermined photonic band gap with predefined energetic position and width between two energy levels ⁇ and ⁇ 2 with ⁇ ⁇ 2 , depending on the energetic position and width of the electrical band gap of the semiconductor material underlying semiconductor with an electrical Bandgap of the energy amount e G , which includes the following steps:
  • the invention described below is therefore based on the idea of realizing a semiconductor in the form of a photonic structure. This results in a new class of materials with variable material properties. These are referred to below as meta-semiconductors. This material principle is particularly suitable for use in a solar cell, which is why this example is often used. It is emphasized, however, that the described concept is not limited to solar cells, but is to be understood abstractly.
  • Metamaterials are a particular class of artificially created structures where certain material properties are defined by the structure.
  • a prominent example here are materials with a negative refractive index.
  • the material property which is influenced here is the magnetic permeability.
  • photonic crystals can be understood as metamaterials in which the dispersion relation of the photons in the material is defined by the structure.
  • the effects that occur for photons in the photonic crystal are comparable to those of electrons in a semiconductor crystal.
  • the photonic crystal takes its name as well as its physical description.
  • a photonic band structure is formed for the photons in the photonic crystal.
  • a photonic band denotes a region of photons of particular energies and certain directions that can not exist within the photonic crystal. This results in no photons inside the band being able to enter the crystal from outside (it reflects perfectly) and that no photons can exit from inside (the emission is suppressed).
  • the electrical band gap of the semiconductor material from which the solar cell consists This applies to both single and multiple solar cells.
  • the electrical bandgap defines up to which energy G photons can be absorbed or emitted by the solar cell. The lower this energy is, the more photons can be used. However, the higher the electric band gap energy G , the larger the open circuit voltage of the solar cell. For maximum efficiency, therefore, there is a theoretical maximum for an electric bandgap energy of about 1.1 eV for a single solar cell, which is very close to the bandgap energy of silicon.
  • the bandgap energy ⁇ 9 is a material property. Especially for multiple solar cells is the possibility to pool these currencies ⁇ len and not be limited to the prescribed by nature energy advantage.
  • the semiconductor must be chosen, which is to be influenced by the structuring.
  • the choice of the semiconductor sets the
  • the frequency corresponding to the band gap between valence band and conduction band z G will be equal to or greater than the frequency that marks the lower limit of the photonic band ⁇ .
  • the frequency which marks the upper limit of the photonic band Z2 may be above z G (overlap of the bands).
  • ⁇ is already above ⁇ ⁇ (separation of the bands). The important thing here is that the position of the photonic band can be clearly defined for each purpose.
  • widths of the photonic band gaps are needed.
  • the width of such a band gap depends on the geometry of the structure as well as on the material parameters of the base material. It is therefore already largely determined by the steps a) and b) in principle.
  • the only choice is the geometry of the photonic crystal. A restriction therefore exists only in the available geometries.
  • a choice of the photonic crystal also has Effects on possible manufacturing processes and thus also depends on the semiconductor material used in this regard.
  • step a) and c) already allows the characteristic of the photonic crystal, its band structure, to be determined.
  • the band structure can be calculated using the program MPB (MIT Photonic-Bands, Version 1.4.2, available from the Massachusetts Institute of Technology). A detailed description of how to do this can be found in the literature:
  • the calculated band structure is given in standardized frequencies. This specification is due to the fact that the characteristic of a photonic crystal with respect to its wavelength with the period size is scaled (Doubling as the structure size of the pho ⁇ tonic crystal, one obtains a crystal having unchanged features, which now however at a twice as large wavelength occur). The required period size of the crystal So it is not fixed at this point. However, a clear definition is given by the fact that in step b) the absolute position of the band was determined. As a result, the period size of the photonic crystal can now be clearly defined.
  • the method according to the invention thus makes it possible to purposefully create a meta-semiconductor with predetermined electro-optic properties.
  • This meta-semiconductor consists eg of conventional semiconductor materials.
  • this semiconductor is patterned photonically, wherein this structure is designed such that the photonic band gap of the photonic structure and the electrical band gap of the matrix material are coordinated.
  • the ⁇ se coordination and the desired effect, which are intended with the combination (ie, the type of the photonic crystal) define the feature size of the photonic structure ⁇ as well as their shape.
  • Decisive are two parameters, the central wavelength ⁇ 0 of the photonic band gap of the band, wel ⁇ ches to be used and the width ⁇ of the photonic band.
  • the central wavelength ⁇ 0 defines the structure size ⁇ in a known photonic structure, the width can be influenced by the choice of the structure used in the case of a known matrix material, but also depends on ⁇ .
  • the following is to be achieved: Let there be a semiconductor material with an electric bandgap which is characterized by a wavelength ⁇ ⁇ .
  • the aim now is to bring this material into a photonic structure, so that the structure has a photonic band gap, which encloses an area containing ⁇ ⁇ and continues to a wavelength ⁇ 0 ⁇ , where ⁇ > ⁇ ⁇ ⁇ ,
  • the range between ⁇ 0 ⁇ and ⁇ ⁇ indicates the width that the photonic bandgap must at least have to be suitable for this application.
  • For a given matrix material and for a given range [ ⁇ 0 ⁇ , ⁇ ⁇ ] it can be calculated which photonic structures are suitable for this task.
  • a description of the method required can be found in Photonic Crystals - "Molding the Flow of Light" by John D. Joannopoulos (Princeton University Press (ISBN 0-691-03744-2).
  • the program MIT photonic bands can be used, which is freely accessible.
  • properties of photonic crystals can also be seen in the specialist literature, so that here too a selection of possible structures can be made.
  • the choice of the photonic structure and of the matrix material completely defines the photonic band structure of the meta-semiconductor.
  • This can also be calculated via the program MPB.
  • This program specifies the band structure in normalized frequencies.
  • the calculation of the Git ⁇ terkonstanten a can when ⁇ 0 ⁇ and ⁇ ⁇ are known, are calculated from these data.
  • This procedure can also be transferred to other possible applications, for example if a range [ ⁇ , ⁇ 2 ] is to be selected in which the photonic band gap is to be active, but this range is at wavelengths which are below ⁇ ⁇ .
  • a preferred embodiment of the invention provides that in step b) the photonic bandgap is selected such that the condition ⁇ 0 ⁇ 2 .
  • the photonic bandgap is chosen such that the energetic position of the upper edge of the photonic band gap is at a higher energy level than the energy upper limit of the electric band gap.
  • the photonic band gap is arranged so that it partially overlaps energetically ⁇ with the electrical band gap.
  • the electric band gap is applied so that the following condition applies: Ei G ⁇ 2
  • a further preferred embodiment provides that the photonic band gap is applied in an energy-separated manner from the electrical band gap.
  • the photonic band gap is set energetically over the existing electrical band gap.
  • the condition is: e G ⁇ EL
  • the inventive method is suitable in principle with all semiconductors, preferably, the semiconductor used, the selected in step a) ⁇ to, but selected from the group consisting of IV semiconductors, III-V semiconductors, II-VI semiconductors, are III-VI semiconductors, I-III-VI semiconductors, IV-IV semiconductors and / or combinations thereof.
  • the following semiconductors are particularly preferably used: a) IV semiconductors made of Si and / or Ge,
  • Semiconductor materials in particular ternary or quaternary semiconductor of the aforementioned materials.
  • Preferred photonic structures that can be selected in step c) are selected from the group consisting of Bragg stacks, 2D or SD photonic crystals, in particular inverted opals. Three-dimensional photonic crystals, in particular inverted opals, are particularly preferred.
  • a process for the preparation ⁇ position of a semiconductor material having a predefi ⁇ ned electro-optical energy band structure is also provided in which the following steps are performed by ⁇ : a) Determining a lattice constant a of a one-, two- or three-dimensional photonic structuring of a semiconductor material according to one of the preceding claims, as well as
  • the manufacture of the photonic structure in or from a respective semiconductor material may preferably be effected by lithographic processes, etching, holographic methods, self-organization, nanorobotic methods, ion drilling, directional deposition, direct laser writing and / or inversion processes.
  • a semiconductor material which has an electrical bandgap of the energy amount e G , which has a predetermined photonic structuring with a photonic bandgap between two energy levels ⁇ and ⁇ 2 , where ⁇ ⁇ 2 .
  • a semiconductor material which has a precisely predetermined position of a phase which is matched to the electrical band gap. has a tonic band gap.
  • the semiconductor material may be further processed according to the methods further known in the art, e.g. can be doped and / or electrically contacted on the front and / or back, so that it can be used to produce solar cells, diodes, light-emitting diodes or laser diodes.
  • the invention relates to a method for producing a meta-material with adjustable electro-optical bandgap energy. This is achieved by combining a classic semiconductor with a photonic structure.
  • the photonic structure should in principle be a complete photonic
  • This band gap prevents the Absorption and emission of photons with energies ⁇ ⁇ hv ⁇ 2 within the photonic band gap.
  • e G the absorption and emission of photons for all energies ⁇ ⁇ e G is prohibited.
  • these absorption and emission properties also combine.
  • a particularly illustrative case occurs when the electric band gap energy is within the photonic band gap ⁇ ⁇ G ⁇ 2 . Measured by the absorption and emission properties, such a structure is indistinguishable from a classical semiconductor with the electric bandgap energy ⁇ 2 .
  • this invention generally describes a new class of material, a new type of semiconductor, which claims relevance everywhere. where the bandgap energy of the semiconductor is important.
  • an eta semiconductor may be e.g. so that a semiconductor material having a high degree of radiative recombination (such as GaAs) is made into the shape of an inverted opal.
  • the dimensions of the opal should be chosen so that the complete optical band gap overlaps the electrical band gap (period of the opal structure about 350 nm). This gives the meta-semiconductor.
  • embodiments of a semiconductor material in the form of a photonic structure which has a complete photonic bandgap and is electrically contacted, or a solar cell / LED / - Sensor in the form of a photonic structure with a complete band gap possible.
  • FIG. 1 a shows the electro-optical properties of a semiconductor material which has a photonic band gap separated from the electrical band gap.
  • the photonic band gap is energetically higher than the electric band gap, ie E G ⁇ , where G represents the energy of the band gap.
  • G represents the energy of the band gap.
  • the semiconductor can not absor ⁇ beers in the field of electrical bandgap even in the field of photonic band gap energy radiation, so here absorbency of a derarti ⁇ gen semiconductor material ideally falls to zero. In the "allowed" areas between the bands absorption is possible.
  • FIG. 2 shows a possible structure for He ⁇ generation of a photonic band gap is shown, this is in the present case, an inverted Opal, wherein Figure 2 shows a two-dimensional section or a section through a three-dimensional actually len photonic crystal represents.
  • FIG. 2 shows a meta-semiconductor consisting of GaAs, with the photonic structure of an inverted opal. Light with energies in the electric
  • Band gap can not lift electrons into the conduction band and therefore can neither be absorbed nor emitted. Incident light is transmitted. Light in the photonic band gap can not exist in the photonic crystal and also can not be emitted. Incident light is reflected and therefore can not be absorbed ⁇ the.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé pour ajuster d'une manière prédéfinie des propriétés électro-optiques de matériaux semi-conducteurs, par détermination d'une constante de réseau, qui est utilisée comme base pour une structuration photonique du matériau semi-conducteur. La bande interdite photonique qui résulte de la structuration photonique présente alors d'une manière prédéfinie une corrélation avec la bande interdite électrique contenue d'une manière intrinsèque dans le matériau semi-conducteur. La présente invention concerne en outre un procédé de fabrication d'un matériau semi-conducteur correspondant, par introduction, dans le matériau semi-conducteur, d'une structuration photonique présentant la constante de réseau prédéfinie. L'invention concerne aussi des matériaux semi-conducteurs qui présentent les propriétés électro-optiques prédéfinies.
PCT/EP2011/000825 2010-02-23 2011-02-21 Procédé pour déterminer une structure d'un matériau semi-conducteur présentant des propriétés électro-optiques prédéfinies, procédé pour sa fabrication ainsi que matériau semi-conducteur. Ceased WO2011103993A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP11704938A EP2539754A1 (fr) 2010-02-23 2011-02-21 Procédé pour déterminer une structure d'un matériau semi-conducteur présentant des propriétés électro-optiques prédéfinies, procédé pour sa fabrication ainsi que matériau semi-conducteur.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201010008905 DE102010008905B3 (de) 2010-02-23 2010-02-23 Verfahren zur Bestimmung einer Struktur eines Halbleitermaterials mit vordefinierten elektrooptischen Eigenschaften sowie Verfahren zu dessen Herstellung
DE102010008905.2 2010-02-23

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WO2011103993A1 true WO2011103993A1 (fr) 2011-09-01

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EP (1) EP2539754A1 (fr)
DE (1) DE102010008905B3 (fr)
WO (1) WO2011103993A1 (fr)

Citations (2)

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DE102004050176A1 (de) * 2004-09-20 2006-03-23 Universität Duisburg-Essen Optoelektronisches Bauelement und Verfahren zum Steuern von Tunnelelektronenströmen durch Photonen
WO2009005561A2 (fr) * 2007-05-02 2009-01-08 Massachusetts Institute Of Technology Dispositif optique à non linéarité contrôlée

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US20030156319A1 (en) * 2000-01-28 2003-08-21 Sajeev John Photonic bandgap materials based on silicon
US7442964B2 (en) * 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
KR100721454B1 (ko) * 2005-11-10 2007-05-23 서울옵토디바이스주식회사 광 결정 구조체를 갖는 교류용 발광소자 및 그것을제조하는 방법
DE102008056175A1 (de) * 2008-11-06 2010-05-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Strahlung emittierenden Dünnschichtbauelements und Strahlung emittierendes Dünnschichtbauelement

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DE102004050176A1 (de) * 2004-09-20 2006-03-23 Universität Duisburg-Essen Optoelektronisches Bauelement und Verfahren zum Steuern von Tunnelelektronenströmen durch Photonen
WO2009005561A2 (fr) * 2007-05-02 2009-01-08 Massachusetts Institute Of Technology Dispositif optique à non linéarité contrôlée

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CARL J. BARRELET ET AL: "Hybrid Single-Nanowire Photonic Crystal and Microresonator Structures", NANO LETT., vol. 6, no. 1, 23 December 2005 (2005-12-23), pages 11 - 15, XP007918298 *
J.D. JOANNOPOULOS, R. D. MEADE, J. N. WINN: "Photonic Crystals", 1995, PRINCETON UNIVERSITY PRESS, article "Molding the Flow of Light"
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Also Published As

Publication number Publication date
EP2539754A1 (fr) 2013-01-02
DE102010008905B3 (de) 2011-06-16

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