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WO2011160272A1 - Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée - Google Patents

Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée Download PDF

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Publication number
WO2011160272A1
WO2011160272A1 PCT/CN2010/074116 CN2010074116W WO2011160272A1 WO 2011160272 A1 WO2011160272 A1 WO 2011160272A1 CN 2010074116 W CN2010074116 W CN 2010074116W WO 2011160272 A1 WO2011160272 A1 WO 2011160272A1
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
diffusion
fabricating
cell according
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2010/074116
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English (en)
Chinese (zh)
Inventor
冯纪伟
冯志强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Trina Solar Energy Co Ltd
Original Assignee
Changzhou Trina Solar Energy Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to PCT/CN2010/074116 priority Critical patent/WO2011160272A1/fr
Publication of WO2011160272A1 publication Critical patent/WO2011160272A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cell processing methods, in particular to a method for manufacturing a high resistance solar cell.
  • the main steps of the main manufacturing process of single and polycrystalline silicon solar cells are as follows: a. chemical cleaning and surface texturing treatment; b. diffusion: P-type silicon wafer becomes N-type after diffusion, forming PN junction, making silicon wafer Having a photovoltaic effect; c. peripheral etching; d. depositing an anti-reflection film; e. printing an electrode; f. sintering: a process of forming an alloy between the printed electrode and the silicon wafer.
  • the diffusion method currently used by various silicon solar cell manufacturers is the diffusion of phosphorus sources.
  • the process gas used for the diffusion of the liquid phosphorus source is oxygen, nitrogen (the nitrogen generally has a large flow rate, commonly known as large nitrogen), and the source gas (using nitrogen gas, commonly known as small nitrogen). These gases pass through the quartz tube and pass through a high temperature. The series of chemical reactions, the final phosphorus atoms diffuse into the silicon substrate to form a phosphorus-doped emitter.
  • the high-resistance emitter can improve the response of the battery to the blue band of the solar spectrum and improve the conversion efficiency of the battery.
  • the diffusion resistance exceeds 65 ohms, the Ag/Si sintered contact resistance is too large or the solar cell's dark characteristics are obtained. difference.
  • the polycrystalline diffusion square resistance of mainstream solar cell manufacturers is mainly 50 ⁇ 65 ohm/sq.
  • the technical problem to be solved by the present invention is to improve the contact resistance and dark characteristics of the high-resistance emitter-emitting polycrystalline silicon battery, so that the ordinary screen printing battery has higher conversion efficiency.
  • the oxygen flow rate is reduced during the deposition phase, and the flow rate of the nitrogen source is maximized to make the gas environment on the surface of the silicon wafer as uniform as possible.
  • Excessive ratio of deposition/propulsion time leads to an increase in surface recombination rate, Voc and Isc deteriorate. If the ratio is too small, the Ag/Si contact will increase and Rs will deteriorate.
  • the deposition/propulsion time ratio range is
  • the deposition/propulsion time ratio can be adjusted within this range.
  • the lower square resistance corresponds to a smaller ratio, and the higher square resistance corresponds. Higher ratio.
  • Each of the heat sources disposed in the diffusion device for the diffusion process has a constant operating temperature for a continuous period of time.
  • the constant operating temperature of each of the heat sources provided in the diffusion device for the diffusion process is 815 ° C to 845 ° C.
  • oxygen is 300 sccm in the process parameter setting of the gas flow rate in the diffusion device for the diffusion process, carrying the source nitrogen HOOsccm
  • the deposition/propulsion time ratio of 15:17 is optimal in the process parameter setting of the gas flow rate in the diffusion device for the diffusion process.
  • the maximum surface temperature of the silicon wafer is controlled to be 710 ° C to 740 ° C, and the surface temperature of the silicon wafer is higher than 600 ° C for less than 6 seconds.
  • the high-resistance polycrystalline battery has a low contact resistance and good darkness characteristics through a sharp peak temperature setting.
  • Each of the heat sources disposed in the diffusion device for the diffusion process has a constant operating temperature for a continuous period of time.
  • the speed of the device in which the solar cell is placed in the sintering process is 240 IPM to 250 IPM.
  • the maximum surface temperature of the silicon wafer was controlled at 725 ° C during the sintering process.
  • a high-resistance solar cell manufacturing method including a diffusion process and a sintering process, the two main steps of the solar cell diffusion process are deposition and propulsion, and the gas flow parameters used are
  • the deposition/propulsion time ratio range is 15 : 15 ⁇ 15 : 20.
  • the 15: 17 is the optimum ratio at 74 ohm. It can be adjusted within this range according to the difference of the diffusion sheet resistance.
  • the lower sheet resistance corresponds.
  • a small ratio, a higher square resistance corresponds to a higher ratio.
  • the diffusion temperature is the most important parameter under diffusion. Under the above airflow and deposition/propulsion ratio, the temperature can be adjusted from 815 °C to 845 °C to achieve 7 (T80ohm square resistance value).
  • Sintering is a key process in high-bar resistance batteries.
  • the invention adjusts the transfer speed of the 250IPM by rapid sintering, and the sharp peak temperature setting enables the maximum surface temperature of the silicon wafer to be adjusted in the range of 710 ° C to 740 ° C, and the surface temperature of the silicon wafer is higher than 600 ° C for less than 6 seconds. Under this condition, 7 (T80 O hm polycrystalline battery has low contact resistance and good dark characteristics.
  • the diffusion square resistance center value is 73 ohm/sq.
  • the sintering setting causes the surface temperature of the silicon wafer to reach 730 ° C, and the surface temperature of the silicon wafer is higher than 600 ° C for less than 6 seconds.
  • the contact resistance measurement of the cell after sintering was performed using a Corescan scan, as can be seen from Tables 1 and 2.
  • the contact resistance is comparable to a 50 ohm contrast.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé de fabrication d'une cellule solaire avec une résistance de couche élevée qui fait appel à une technique de diffusion et une technique de frittage. Le débit gazeux dans le dispositif de diffusion pour ladite technique de diffusion est de 7,5 slm d'azote gazeux, 150-450 sccm d'oxygène gazeux, et 80-1400 sccm d'azote gazeux contenant une source ; la proportion temps de dépôt/temps de propulsion est de 15:15-15:20 ; et le débit d'oxygène gazeux lors de la propulsion est de 850 sccm. La présente invention permet d'améliorer la résistance de contact et les caractéristiques de gradation du polysilicium d'une jonction émetteur avec une résistance de couche élevée, et une cellule de sérigraphie courante présente une efficacité de conversion supérieure. La tension en circuit ouvert augmente de 2-4 mV, la densité de courant de court-circuit augmente de 0,3-0,7 mA/cm2, et l'efficacité de conversion augmente de 0,2-0,4 %.
PCT/CN2010/074116 2010-06-21 2010-06-21 Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée Ceased WO2011160272A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/074116 WO2011160272A1 (fr) 2010-06-21 2010-06-21 Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/074116 WO2011160272A1 (fr) 2010-06-21 2010-06-21 Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée

Publications (1)

Publication Number Publication Date
WO2011160272A1 true WO2011160272A1 (fr) 2011-12-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2010/074116 Ceased WO2011160272A1 (fr) 2010-06-21 2010-06-21 Procédé de fabrication d'une cellule solaire avec une résistance de couche élevée

Country Status (1)

Country Link
WO (1) WO2011160272A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983227A (zh) * 2012-12-13 2013-03-20 百力达太阳能股份有限公司 一种解决太阳能电池片氧化后外观不良的方法
CN104409557A (zh) * 2014-09-01 2015-03-11 苏州矽美仕绿色新能源有限公司 一种用于加深硅片pn结深度的扩散方法及硅片
CN104638058A (zh) * 2013-11-15 2015-05-20 江苏天宇光伏科技有限公司 一种降低成本提高转换效率的高方阻扩散工艺方法
CN119630102A (zh) * 2024-11-30 2025-03-14 宜宾英发德耀科技有限公司 一种改善太阳能电池片方阻均匀性的方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1694268A (zh) * 2005-05-18 2005-11-09 陈娟娟 硅片太阳电池制作方法
CN101217170A (zh) * 2007-12-27 2008-07-09 北京市太阳能研究所有限公司 一种应用于硅太阳能电池的扩散工艺
CN101237010A (zh) * 2008-02-29 2008-08-06 珈伟太阳能(武汉)有限公司 改善太阳能电池扩散的方法
CN101241952A (zh) * 2007-02-07 2008-08-13 北京中科信电子装备有限公司 高效低成本薄片晶体硅太阳能电池片工艺
US20090020158A1 (en) * 2005-04-26 2009-01-22 Shin-Etsu Handotai Co., Ltd. Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device
US20100136771A1 (en) * 2009-06-17 2010-06-03 Hyungrak Kim Sub-critical shear thinning group iv based nanoparticle fluid

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090020158A1 (en) * 2005-04-26 2009-01-22 Shin-Etsu Handotai Co., Ltd. Method for manufacturing solar cell and solar cell, and method for manufacturing semiconductor device
CN1694268A (zh) * 2005-05-18 2005-11-09 陈娟娟 硅片太阳电池制作方法
CN101241952A (zh) * 2007-02-07 2008-08-13 北京中科信电子装备有限公司 高效低成本薄片晶体硅太阳能电池片工艺
CN101217170A (zh) * 2007-12-27 2008-07-09 北京市太阳能研究所有限公司 一种应用于硅太阳能电池的扩散工艺
CN101237010A (zh) * 2008-02-29 2008-08-06 珈伟太阳能(武汉)有限公司 改善太阳能电池扩散的方法
US20100136771A1 (en) * 2009-06-17 2010-06-03 Hyungrak Kim Sub-critical shear thinning group iv based nanoparticle fluid

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983227A (zh) * 2012-12-13 2013-03-20 百力达太阳能股份有限公司 一种解决太阳能电池片氧化后外观不良的方法
CN104638058A (zh) * 2013-11-15 2015-05-20 江苏天宇光伏科技有限公司 一种降低成本提高转换效率的高方阻扩散工艺方法
CN104409557A (zh) * 2014-09-01 2015-03-11 苏州矽美仕绿色新能源有限公司 一种用于加深硅片pn结深度的扩散方法及硅片
CN119630102A (zh) * 2024-11-30 2025-03-14 宜宾英发德耀科技有限公司 一种改善太阳能电池片方阻均匀性的方法

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