WO2011158636A1 - Composite substrate - Google Patents
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- WO2011158636A1 WO2011158636A1 PCT/JP2011/062246 JP2011062246W WO2011158636A1 WO 2011158636 A1 WO2011158636 A1 WO 2011158636A1 JP 2011062246 W JP2011062246 W JP 2011062246W WO 2011158636 A1 WO2011158636 A1 WO 2011158636A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
- H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
Definitions
- the present invention relates to a composite substrate.
- elasticity such as surface acoustic wave devices that can function as filter elements and oscillators used in mobile phones and the like, Lamb wave elements using piezoelectric thin films, and thin film resonators (FBAR: Film Bulk Acoustic Resonator) Wave devices are known.
- FBAR Film Bulk Acoustic Resonator
- a device in which a supporting substrate and a piezoelectric substrate that propagates an acoustic wave are bonded together and a comb-shaped electrode capable of exciting a surface acoustic wave is provided on the surface of the piezoelectric substrate is known.
- a substrate obtained by bonding a support substrate and a piezoelectric substrate is referred to as a composite substrate.
- a sapphire substrate is often used.
- Patent Document 1 it has been difficult to form a piezoelectric substrate using an adhesive on the main surface of the spinel substrate. For this reason, in Patent Document 1, the spinel substrate and the piezoelectric substrate are directly joined using van der Waals force without using an adhesive.
- the present invention has been made to solve such problems, and has as its main object to provide a composite substrate in which a piezoelectric substrate and a support substrate made of spinel are firmly bonded via an organic adhesive layer. .
- the composite substrate of the present invention employs the following means in order to achieve the main object described above.
- the composite substrate of the present invention is A piezoelectric substrate; A support substrate made of spinel; An organic adhesive layer for bonding the piezoelectric substrate and the support substrate; With Of the support substrate, the bonding surface with the piezoelectric substrate has Rt (maximum cross-sectional height of the roughness curve) of 5 nm to 50 nm.
- the piezoelectric substrate and the support substrate made of spinel are firmly bonded through the organic adhesive layer. Moreover, since the organic adhesive layer is present compared to the case where the piezoelectric substrate and the support substrate are directly bonded, an effect of preventing cracking due to stress relaxation can be obtained.
- FIG. 1 is a perspective view of a composite substrate 10.
- FIG. FIG. 2 is a cross-sectional view taken along line AA in FIG. 1.
- the piezoelectric substrate is, for example, one selected from the group consisting of lithium tantalate, lithium niobate, lithium niobate-lithium tantalate solid solution, lithium borate, langasite, and quartz. It is good also as a board
- the size of the piezoelectric substrate is not particularly limited. For example, the diameter may be 50 to 150 mm and the thickness may be 10 to 500 ⁇ m.
- the organic adhesive layer may be, for example, an acrylic adhesive layer or an epoxy adhesive.
- the thickness of the organic adhesive layer is not particularly limited, but for example, 0.1 to 1.0 ⁇ m is preferable because good frequency temperature characteristics can be obtained.
- the support substrate is a substrate made of spinel.
- Rt of the bonding surface of the support substrate with the piezoelectric substrate is 5 nm or more and 50 nm or less. If the Rt of the adhesion surface is less than 5 nm, the piezoelectric substrate and the support substrate may be peeled off when the composite substrate is processed at a high temperature, which is not preferable. If it exceeds 50 ⁇ m, the piezoelectric substrate is not processed when the composite substrate is processed at a high temperature. This is not preferable because the substrate may burst.
- the spinel is preferably a polycrystalline spinel that is an oxide of magnesium and aluminum.
- the size of the support substrate is not particularly limited, and for example, the diameter may be 50 to 150 mm and the thickness may be 100 to 500 ⁇ m.
- the surface of the support substrate is polished so that Rt is 5 nm to 50 nm.
- the bonding surface of the piezoelectric substrate and the support substrate is washed, and impurities (oxide, adsorbed material, etc.) adhering to the bonding surface are removed.
- an organic adhesive is uniformly applied to at least one of the joint surfaces of both substrates.
- the coating method include spin coating.
- the two substrates are bonded together, and when the organic adhesive is a thermosetting resin, it is cured by heating, and when the organic adhesive is a photocurable resin, it is cured by irradiation with light.
- the organic adhesive layer has a thickness of 0.1 to 1.0 ⁇ m. In this way, the composite substrate of the present invention can be obtained.
- the composite substrate of the present invention is used for an acoustic wave device.
- a surface acoustic wave device As an acoustic wave device, a surface acoustic wave device, a Lamb wave element, a thin film resonator (FBAR), and the like are known.
- a surface acoustic wave device includes an input-side IDT (Interdigital-Transducer) electrode (also referred to as a comb-shaped electrode or an interdigital electrode) that excites surface acoustic waves on the surface of a piezoelectric substrate and an output-side IDT that receives surface acoustic waves. And an electrode.
- IDT Interdigital-Transducer
- an electric field is generated between the electrodes, and a surface acoustic wave is excited and propagates on the piezoelectric substrate. Then, the propagated surface acoustic wave can be taken out as an electric signal from the IDT electrode on the output side provided in the propagation direction.
- Such an acoustic wave device employs a reflow process when mounted on a printed wiring board, for example. In this reflow process, when lead-free solder is used, the acoustic wave device is heated to about 260 ° C. However, since the acoustic wave device using the composite substrate of the present invention is excellent in heat resistance, the piezoelectric substrate and the support substrate Generation of cracks is suppressed.
- the piezoelectric substrate may have a metal film on the back surface.
- the metal film plays a role of increasing the electromechanical coupling coefficient in the vicinity of the back surface of the piezoelectric substrate when a Lamb wave element is manufactured as an elastic wave device.
- the Lamb wave element has a structure in which comb electrodes are formed on the surface of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by the cavity provided in the support substrate. Examples of the material of such a metal film include aluminum, an aluminum alloy, copper, and gold.
- a composite substrate including a piezoelectric substrate that does not have a metal film on the back surface may be used.
- the piezoelectric substrate may have a metal film and an insulating film on the back surface.
- the metal film serves as an electrode when a thin film resonator is manufactured as an acoustic wave device.
- the thin film resonator has a structure in which electrodes are formed on the front and back surfaces of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by using the insulating film as a cavity.
- the material for such a metal film include molybdenum, ruthenium, tungsten, chromium, and aluminum.
- the material for the insulating film include silicon dioxide, zinc oxide, phosphorous silica glass, and boron phosphorous silica glass.
- Example 1 1 is a perspective view of the composite substrate 10, and FIG. 2 is a cross-sectional view taken along the line AA of FIG.
- the composite substrate 10 is used for a surface acoustic wave device, and is formed in a circular shape with one portion being flat. This flat portion is a portion called an orientation flat (OF), and is used for detection of a wafer position and direction when various operations are performed in the manufacturing process of the surface acoustic wave device.
- the composite substrate 10 includes a piezoelectric substrate 12 made of lithium tantalate (LT) capable of propagating elastic waves, and a support substrate 14 made of spinel (cubic polycrystalline spinel, MgAl 2 O 4 ) bonded to the piezoelectric substrate 12.
- LT lithium tantalate
- MgAl 2 O 4 cylindrical polycrystalline spinel
- the piezoelectric substrate 12 has a thickness of 20 ⁇ m and a diameter of 4 inches (about 100 mm).
- the piezoelectric substrate 12 is a 42 ° Y-cut X-propagation LT substrate (42Y-X LT).
- the support substrate 14 has a thickness of 250 ⁇ m and a diameter of 4 inches.
- the adhesive layer 16 is a layer in which an acrylic adhesive is solidified and has a thickness of 0.6 ⁇ m.
- a support substrate made of polycrystalline spinel having a diameter of 4 inches was prepared as a support substrate.
- a 42 ° Y-cut X-propagation LT substrate having a diameter of 4 inches was prepared as a piezoelectric substrate.
- the adhesive surface of the piezoelectric substrate with the support substrate was polished and polished so that the surface roughness Rt was 3 nm.
- the thickness of the piezoelectric substrate after polishing was 250 ⁇ m.
- the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished with microdiamond so that Rt was 5 nm.
- the thickness of the support substrate after polishing was 250 ⁇ m.
- Rt was measured in accordance with JIS B601 (2001), with the measurement range being a region surrounded by a 10 ⁇ m ⁇ 10 ⁇ m square.
- an acrylic adhesive was applied to one side of each substrate using a spin coater.
- both substrates were bonded so that the adhesive-coated surfaces of both substrates were facing each other, and held at 280 ° C. for 30 minutes.
- curing an acrylic adhesive was obtained.
- the piezoelectric substrate was polished and polished until the thickness became 20 ⁇ m, and 10 composite substrates 10 of Example 1 were obtained.
- Example 2 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 45 nm.
- Example 1 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 2 nm.
- Example 2 Ten composite substrates 10 were obtained in the same manner as in Example 1, except that the adhesive surface of the support substrate with the piezoelectric substrate was polished and polished so that Rt was 60 nm.
- the air was expanded by the high temperature treatment, and the piezoelectric substrate was ruptured. Since the arithmetic average roughness Ra is an average value, it does not serve as an index as to whether or not a minute hole having a deep depth exists. For example, even if Ra is 40 nm, deep microholes with a depth exceeding 50 nm may exist.
- the composite substrate of the present invention can be used for an elastic wave device such as a surface acoustic wave device, a Lamb wave element, and a thin film resonator (FBAR).
- an elastic wave device such as a surface acoustic wave device, a Lamb wave element, and a thin film resonator (FBAR).
- FBAR thin film resonator
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Abstract
Description
本発明は、複合基板に関する。 The present invention relates to a composite substrate.
従来より、携帯電話等に使用されるフィルタ素子や発振子として機能させることができる弾性表面波デバイスや、圧電薄膜を用いたラム波素子や薄膜共振子(FBAR:Film Bulk Acoustic Resonator)などの弾性波デバイスが知られている。こうした弾性波デバイスとしては、支持基板と弾性波を伝搬させる圧電基板とを貼り合わせ、圧電基板の表面に弾性表面波を励振可能な櫛形電極を設けたものが知られている。このうち、支持基板と圧電基板とを貼り合わせたものは複合基板と称される。支持基板には、サファイア基板が用いられることが多いが、サファイアは硬度が高いため所定形状に切削加工することが困難であり、コストも高いという欠点があった。これらの欠点を考慮して、近年、支持基板として、スピネル基板を用いることが提案されている(特許文献1)。
しかしながら、特許文献1の段落0021に記載されているように、スピネル基板の主表面上に接着剤を用いて圧電基板を形成することは困難であった。このため、特許文献1では、スピネル基板と圧電基板とを接着剤を用いることなくファンデルワールス力を利用して直接接合している。 However, as described in paragraph 0021 of Patent Document 1, it has been difficult to form a piezoelectric substrate using an adhesive on the main surface of the spinel substrate. For this reason, in Patent Document 1, the spinel substrate and the piezoelectric substrate are directly joined using van der Waals force without using an adhesive.
本発明はこのような課題を解決するためになされたものであり、圧電基板とスピネルからなる支持基板とを有機接着層を介して堅固に接着された複合基板を提供することを主目的とする。 The present invention has been made to solve such problems, and has as its main object to provide a composite substrate in which a piezoelectric substrate and a support substrate made of spinel are firmly bonded via an organic adhesive layer. .
本発明の複合基板は、上述の主目的を達成するために以下の手段を採った。 The composite substrate of the present invention employs the following means in order to achieve the main object described above.
本発明の複合基板は、
圧電基板と、
スピネルからなる支持基板と、
前記圧電基板と前記支持基板とを接着する有機接着層と、
を備え、
前記支持基板のうち前記圧電基板との接着面は、Rt(粗さ曲線の最大断面高さ)が5nm以上50nm以下
のものである。
The composite substrate of the present invention is
A piezoelectric substrate;
A support substrate made of spinel;
An organic adhesive layer for bonding the piezoelectric substrate and the support substrate;
With
Of the support substrate, the bonding surface with the piezoelectric substrate has Rt (maximum cross-sectional height of the roughness curve) of 5 nm to 50 nm.
この複合基板では、支持基板のうち圧電基板との接着面のRtが5nm以上50nm以下であるため、圧電基板とスピネルからなる支持基板とが有機接着層を介して堅固に接着される。また、圧電基板と支持基板とを直接接合した場合に比べて、有機接着層が存在するため、応力緩和による割れ防止効果が得られる。 In this composite substrate, since the Rt of the bonding surface of the support substrate to the piezoelectric substrate is 5 nm or more and 50 nm or less, the piezoelectric substrate and the support substrate made of spinel are firmly bonded through the organic adhesive layer. Moreover, since the organic adhesive layer is present compared to the case where the piezoelectric substrate and the support substrate are directly bonded, an effect of preventing cracking due to stress relaxation can be obtained.
本発明の複合基板において、圧電基板は、例えば、タンタル酸リチウム、ニオブ酸リチウム、ニオブ酸リチウム-タンタル酸リチウム固溶体単結晶、ホウ酸リチウム、ランガサイト及び水晶からなる群より選ばれた1種からなる基板としてもよい。この圧電基板の大きさは、特に限定するものではないが、例えば、直径が50~150mm、厚さが10~500μmとしてもよい。 In the composite substrate of the present invention, the piezoelectric substrate is, for example, one selected from the group consisting of lithium tantalate, lithium niobate, lithium niobate-lithium tantalate solid solution, lithium borate, langasite, and quartz. It is good also as a board | substrate which becomes. The size of the piezoelectric substrate is not particularly limited. For example, the diameter may be 50 to 150 mm and the thickness may be 10 to 500 μm.
本発明の複合基板において、有機接着層は、例えば、アクリル系接着層又はエポキシ系接着剤としてもよい。この有機接着層の厚みは、特に限定するものではないが、例えば、0.1~1.0μmとするのが良好な周波数温度特性が得られることから好ましい。 In the composite substrate of the present invention, the organic adhesive layer may be, for example, an acrylic adhesive layer or an epoxy adhesive. The thickness of the organic adhesive layer is not particularly limited, but for example, 0.1 to 1.0 μm is preferable because good frequency temperature characteristics can be obtained.
本発明の複合基板において、支持基板は、スピネルからなる基板である。支持基板のうち圧電基板との接着面のRtは、5nm以上50nm以下である。この接着面のRtが5nm未満では、複合基板を高温で処理したときに圧電基板と支持基板とが剥離するおそれがあるため好ましくなく、50μmを超えると、複合基板を高温で処理したときに圧電基板が破裂するおそれがあるため好ましくない。スピネルは、マグネシウムとアルミニウムの酸化物である多結晶スピネルであることが好ましい。支持基板の大きさは、特に限定するものではないが、例えば、直径が50~150mm、厚さが100~500μmとしてもよい。 In the composite substrate of the present invention, the support substrate is a substrate made of spinel. Rt of the bonding surface of the support substrate with the piezoelectric substrate is 5 nm or more and 50 nm or less. If the Rt of the adhesion surface is less than 5 nm, the piezoelectric substrate and the support substrate may be peeled off when the composite substrate is processed at a high temperature, which is not preferable. If it exceeds 50 μm, the piezoelectric substrate is not processed when the composite substrate is processed at a high temperature. This is not preferable because the substrate may burst. The spinel is preferably a polycrystalline spinel that is an oxide of magnesium and aluminum. The size of the support substrate is not particularly limited, and for example, the diameter may be 50 to 150 mm and the thickness may be 100 to 500 μm.
本発明の複合基板を製造する方法の一例を以下に説明する。まず、支持基板の表面を研磨することにより、Rtが5nm以上50nm以下となるようにする。続いて、圧電基板及び支持基板の接合面を洗浄し、該接合面に付着している不純物(酸化物や吸着物等)を除去する。次に、両基板の接合面の少なくとも一方に有機接着剤を均一に塗布する。塗布方法としては、例えばスピンコートなどが挙げられる。その後、両基板を貼り合わせ、有機接着剤が熱硬化性樹脂の場合には加熱して硬化させ、有機接着剤が光硬化性樹脂の場合には光を照射して硬化させる。このように有機接着層を介して間接的に接合する場合には、有機接着層を厚さ0.1~1.0μmとするのが好ましい。このようにして本発明の複合基板を得ることができる。 An example of a method for producing the composite substrate of the present invention will be described below. First, the surface of the support substrate is polished so that Rt is 5 nm to 50 nm. Subsequently, the bonding surface of the piezoelectric substrate and the support substrate is washed, and impurities (oxide, adsorbed material, etc.) adhering to the bonding surface are removed. Next, an organic adhesive is uniformly applied to at least one of the joint surfaces of both substrates. Examples of the coating method include spin coating. Thereafter, the two substrates are bonded together, and when the organic adhesive is a thermosetting resin, it is cured by heating, and when the organic adhesive is a photocurable resin, it is cured by irradiation with light. Thus, when indirectly bonding through an organic adhesive layer, it is preferable that the organic adhesive layer has a thickness of 0.1 to 1.0 μm. In this way, the composite substrate of the present invention can be obtained.
本発明の複合基板は、弾性波デバイスに用いられるものである。弾性波デバイスとしては、弾性表面波デバイスやラム波素子、薄膜共振子(FBAR)などが知られている。例えば、弾性表面波デバイスは、圧電基板の表面に、弾性表面波を励振する入力側のIDT(Interdigital Transducer)電極(櫛形電極、すだれ状電極ともいう)と弾性表面波を受信する出力側のIDT電極とを設けたものである。入力側のIDT電極に高周波信号を印加すると、電極間に電界が発生し、弾性表面波が励振されて圧電基板上を伝搬していく。そして、伝搬方向に設けられた出力側のIDT電極から、伝搬された弾性表面波を電気信号として取り出すことができる。こうした弾性波デバイスは、例えばプリント配線基板に実装する際にはリフロー工程が採用される。このリフロー工程において、鉛フリーのはんだを用いた場合、弾性波デバイスは260℃程度に加熱されるが、本発明の複合基板を利用した弾性波デバイスは耐熱性に優れるため圧電基板や支持基板の割れの発生が抑制される。 The composite substrate of the present invention is used for an acoustic wave device. As an acoustic wave device, a surface acoustic wave device, a Lamb wave element, a thin film resonator (FBAR), and the like are known. For example, a surface acoustic wave device includes an input-side IDT (Interdigital-Transducer) electrode (also referred to as a comb-shaped electrode or an interdigital electrode) that excites surface acoustic waves on the surface of a piezoelectric substrate and an output-side IDT that receives surface acoustic waves. And an electrode. When a high frequency signal is applied to the IDT electrode on the input side, an electric field is generated between the electrodes, and a surface acoustic wave is excited and propagates on the piezoelectric substrate. Then, the propagated surface acoustic wave can be taken out as an electric signal from the IDT electrode on the output side provided in the propagation direction. Such an acoustic wave device employs a reflow process when mounted on a printed wiring board, for example. In this reflow process, when lead-free solder is used, the acoustic wave device is heated to about 260 ° C. However, since the acoustic wave device using the composite substrate of the present invention is excellent in heat resistance, the piezoelectric substrate and the support substrate Generation of cracks is suppressed.
本発明の複合基板において、圧電基板は、裏面に金属膜を有していてもよい。金属膜は、弾性波デバイスとしてラム波素子を製造した際に、圧電基板の裏面近傍の電気機械結合係数を大きくする役割を果たす。この場合、ラム波素子は、圧電基板の表面に櫛歯電極が形成され、支持基板に設けられたキャビティによって圧電基板の金属膜が露出した構造となる。こうした金属膜の材質としては、例えばアルミニウム、アルミニウム合金、銅、金などが挙げられる。なお、ラム波素子を製造する場合、裏面に金属膜を有さない圧電基板を備えた複合基板を用いてもよい。 In the composite substrate of the present invention, the piezoelectric substrate may have a metal film on the back surface. The metal film plays a role of increasing the electromechanical coupling coefficient in the vicinity of the back surface of the piezoelectric substrate when a Lamb wave element is manufactured as an elastic wave device. In this case, the Lamb wave element has a structure in which comb electrodes are formed on the surface of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by the cavity provided in the support substrate. Examples of the material of such a metal film include aluminum, an aluminum alloy, copper, and gold. When a Lamb wave element is manufactured, a composite substrate including a piezoelectric substrate that does not have a metal film on the back surface may be used.
本発明の複合基板において、圧電基板は、裏面に金属膜と絶縁膜を有していてもよい。金属膜は、弾性波デバイスとして薄膜共振子を製造した際に、電極の役割を果たす。この場合、薄膜共振子は、圧電基板の表裏面に電極が形成され、絶縁膜をキャビティにすることによって圧電基板の金属膜が露出した構造となる。こうした金属膜の材質としては、例えば、モリブデン、ルテニウム、タングステン、クロム、アルミニウムなどが挙げられる。また、絶縁膜の材質としては、例えば、二酸化ケイ素、酸化亜鉛、リンシリカガラス、ボロンリンシリカガラスなどが挙げられる。 In the composite substrate of the present invention, the piezoelectric substrate may have a metal film and an insulating film on the back surface. The metal film serves as an electrode when a thin film resonator is manufactured as an acoustic wave device. In this case, the thin film resonator has a structure in which electrodes are formed on the front and back surfaces of the piezoelectric substrate, and the metal film of the piezoelectric substrate is exposed by using the insulating film as a cavity. Examples of the material for such a metal film include molybdenum, ruthenium, tungsten, chromium, and aluminum. Examples of the material for the insulating film include silicon dioxide, zinc oxide, phosphorous silica glass, and boron phosphorous silica glass.
[実施例1]
図1は複合基板10の斜視図、図2は図1のA-A断面図である。この複合基板10は、弾性表面波デバイスに利用されるものであり、1箇所がフラットになった円形に形成されている。このフラットな部分は、オリエンテーションフラット(OF)と呼ばれる部分であり、弾性表面波デバイスの製造工程において諸操作を行うときのウエハ位置や方向の検出などに用いられる。複合基板10は、弾性波を伝搬可能なタンタル酸リチウム(LT)からなる圧電基板12と、この圧電基板12に接合されたスピネル(立方晶多結晶スピネル、MgAl2O4)からなる支持基板14と、両基板12,14を接合する接着層16とを備えている。圧電基板12は、厚さが20μm、直径が4インチ(約100mm)である。この圧電基板12は、42°YカットX伝搬LT基板(42Y-X LT)である。支持基板14は、厚さが250μm、直径が4インチである。接着層16は、アクリル系接着剤が固化した層であり、厚さは0.6μmである。
[Example 1]
1 is a perspective view of the
こうした複合基板10の製造方法について、以下に説明する。まず、支持基板として、直径4インチの多結晶スピネルからなる支持基板を用意した。また、圧電基板として、直径4インチの42°YカットX伝搬LT基板を用意した。そして、圧電基板のうち支持基板との接着面を表面粗さRtが3nmになるように研磨、ポリッシュした。ポリッシュ後の圧電基板の厚さは、250μmであった。一方、支持基板のうち圧電基板との接着面を、Rtが5nmになるように、マイクロダイヤモンドにより研磨、ポリッシュした。ポリッシュ後の支持基板の厚さは、250μmであった。なお、Rtは、測定範囲を10μm×10μmの正方形で囲まれた領域とし、JIS B601(2001)に準じて測定した。続いて、各基板の片面に、アクリル系接着剤をスピンコーターを使用して塗布した。そして、両基板の接着剤塗布面同士が向かい合うようにして両基板を貼り合わせ、280℃で30分保持した。これにより、アクリル系接着剤を硬化してなる接着層を介して両基板が接着された貼り合わせ基板を得た。この貼り合わせ基板のうち、圧電基板を厚さが20μmになるまで研磨、ポリッシュし、実施例1の複合基板10を10枚得た。
A method for manufacturing such a
[実施例2]
実施例1で、支持基板のうち圧電基板との接着面をRtが45nmとなるように研磨、ポリッシュした以外は、実施例1と同様にして複合基板10を10枚得た。
[Example 2]
Ten
[比較例1]
実施例1で、支持基板のうち圧電基板との接着面をRtが2nmとなるように研磨、ポリッシュした以外は、実施例1と同様にして複合基板10を10枚得た。
[Comparative Example 1]
Ten
[比較例2]
実施例1で、支持基板のうち圧電基板との接着面をRtが60nmとなるように研磨、ポリッシュした以外は、実施例1と同様にして複合基板10を10枚得た。
[Comparative Example 2]
Ten
[評価]
実施例1,2及び比較例1,2の複合基板10をそれぞれ10枚ずつオーブン中で280℃、1時間放置した。その結果を表1に示す。表1から明らかなように、実施例1,2の複合基板10については、不良は見られず、圧電基板と支持基板とが堅固に接着されていた。一方、比較例1では、圧電基板と支持基板とが剥離した。また、比較例2では、圧電基板が破裂した。圧電基板が破裂した理由は、Rtが50nmを超えていたことから局所的に深さの深い微小穴が存在し、その微小穴内に空気が巻き込まれた状態で圧電基板と支持基板とが接着され、高温処理によりその空気が膨脹して圧電基板の破裂を招いたと考えられる。なお、算術平均粗さRaは、平均値であるため、深さの深い微小穴が存在しているか否かの指標にならない。例えば、Raが40nmだとしても深さが50nmを超える深い微小穴が存在することがある。
[Evaluation]
Ten
本出願は、2010年6月15日に出願された米国仮出願61/354837を優先権主張の基礎としており、引用によりその内容の全てが本明細書に含まれる。 This application is based on US provisional application 61/354837 filed Jun. 15, 2010, the entire contents of which are incorporated herein by reference.
本発明の複合基板は、例えば、弾性表面波デバイスやラム波素子、薄膜共振子(FBAR)などの弾性波デバイスに利用可能である。 The composite substrate of the present invention can be used for an elastic wave device such as a surface acoustic wave device, a Lamb wave element, and a thin film resonator (FBAR).
Claims (3)
スピネルからなる支持基板と、
前記圧電基板と前記支持基板とを接着する有機接着層と、
を備え、
前記支持基板のうち前記圧電基板との接着面は、Rt(粗さ曲線の最大断面高さ)が5nm以上50nm以下である、
複合基板。 A piezoelectric substrate;
A support substrate made of spinel;
An organic adhesive layer for bonding the piezoelectric substrate and the support substrate;
With
Of the support substrate, the adhesive surface with the piezoelectric substrate has an Rt (maximum cross-sectional height of the roughness curve) of 5 nm or more and 50 nm or less.
Composite board.
請求項1に記載の複合基板。 The spinel is a polycrystalline spinel that is an oxide of magnesium and aluminum.
The composite substrate according to claim 1.
請求項1又は2に記載の複合基板。 The organic adhesive layer has a thickness of 0.1 μm or more and 1.0 μm or less.
The composite substrate according to claim 1 or 2.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013600008U JP3184763U (en) | 2010-06-15 | 2011-05-27 | Composite board |
| CN201190000572XU CN203014754U (en) | 2010-06-15 | 2011-05-27 | Composite substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US35483710P | 2010-06-15 | 2010-06-15 | |
| US61/354,837 | 2010-06-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2011158636A1 true WO2011158636A1 (en) | 2011-12-22 |
Family
ID=45348045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2011/062246 Ceased WO2011158636A1 (en) | 2010-06-15 | 2011-05-27 | Composite substrate |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP3184763U (en) |
| CN (1) | CN203014754U (en) |
| WO (1) | WO2011158636A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10284169B2 (en) | 2017-03-31 | 2019-05-07 | Ngk Insulators, Ltd. | Bonded bodies and acoustic wave devices |
| US10432169B2 (en) | 2016-03-25 | 2019-10-01 | Ngk Insulators, Ltd. | Bonded body and elastic wave element |
| EP3102405B1 (en) * | 2014-02-07 | 2020-11-18 | CeramTec-Etec GmbH | Substrate ceramic laminate |
| US10964882B2 (en) | 2016-03-25 | 2021-03-30 | Ngk Insulators, Ltd. | Bonding method |
| WO2022259591A1 (en) * | 2021-06-09 | 2022-12-15 | 日本碍子株式会社 | Composite substrate and composite substrate manufacturing method |
| JPWO2022259591A1 (en) * | 2021-06-09 | 2022-12-15 |
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| WO2014010696A1 (en) * | 2012-07-12 | 2014-01-16 | 日本碍子株式会社 | Composite substrate, piezoelectric device and method of manufacturing composite substrate |
| JP6481465B2 (en) * | 2014-08-21 | 2019-03-13 | 三星ダイヤモンド工業株式会社 | Breaking method of composite substrate |
| FR3079345B1 (en) * | 2018-03-26 | 2020-02-21 | Soitec | METHOD FOR MANUFACTURING A SUBSTRATE FOR A RADIO FREQUENCY DEVICE |
| TWI787475B (en) | 2018-03-29 | 2022-12-21 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
| TWI791099B (en) | 2018-03-29 | 2023-02-01 | 日商日本碍子股份有限公司 | Junction body and elastic wave element |
| KR102287003B1 (en) | 2018-06-22 | 2021-08-09 | 엔지케이 인슐레이터 엘티디 | Bonded body and acoustic wave element |
| CN109672420B (en) * | 2018-12-18 | 2023-03-31 | 北方民族大学 | Multi-layer piezoelectric substrate provided with magnesium-aluminum alloy film and preparation method thereof |
| CN113690365B (en) * | 2021-07-23 | 2024-02-13 | 绍兴中芯集成电路制造股份有限公司 | Piezoelectric device and method for manufacturing the same |
| CN118476156A (en) * | 2022-01-17 | 2024-08-09 | 日本碍子株式会社 | Method for manufacturing composite substrate |
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- 2011-05-27 CN CN201190000572XU patent/CN203014754U/en not_active Expired - Lifetime
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| JP2003152236A (en) * | 1994-06-03 | 2003-05-23 | Ngk Insulators Ltd | Ceramic diaphragm structure and method of manufacturing the same |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3102405B1 (en) * | 2014-02-07 | 2020-11-18 | CeramTec-Etec GmbH | Substrate ceramic laminate |
| US10432169B2 (en) | 2016-03-25 | 2019-10-01 | Ngk Insulators, Ltd. | Bonded body and elastic wave element |
| US10720566B2 (en) | 2016-03-25 | 2020-07-21 | Ngk Insulators, Ltd. | Bonding method |
| US10964882B2 (en) | 2016-03-25 | 2021-03-30 | Ngk Insulators, Ltd. | Bonding method |
| US10284169B2 (en) | 2017-03-31 | 2019-05-07 | Ngk Insulators, Ltd. | Bonded bodies and acoustic wave devices |
| WO2022259591A1 (en) * | 2021-06-09 | 2022-12-15 | 日本碍子株式会社 | Composite substrate and composite substrate manufacturing method |
| JPWO2022259591A1 (en) * | 2021-06-09 | 2022-12-15 | ||
| CN115943565A (en) * | 2021-06-09 | 2023-04-07 | 日本碍子株式会社 | Composite substrate and method for manufacturing composite substrate |
| JP7455205B2 (en) | 2021-06-09 | 2024-03-25 | 日本碍子株式会社 | Composite substrate and method for manufacturing composite substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3184763U (en) | 2013-07-18 |
| CN203014754U (en) | 2013-06-19 |
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