WO2011155683A1 - Method for active phase correction using negative index metamaterials, exposure imaging device and system using same, and method for improving the resolution of the exposure imaging device using the negative index metamaterials - Google Patents

Abstract

The present invention relates to a method for active phase correction using negative index metamaterials, an exposure imaging device and system using same, and a method for improving the resolution of the exposure imaging device using the negative index metamaterials. More particularly, the present invention relates to an exposure imaging system comprising: a light source unit; a light source control unit controlling the wavelength of an electromagnetic wave radiated from the light source; a pattern unit storing information on an exposure object material or circuit arrangement; a lens unit including a negative index metamaterial layer having a negative index, and a positive index metamaterial layer having a positive index which is positioned at both surfaces of the negative index metamaterial layer; and a recording unit recording information on an electromagnetic wave which is transmitted through the lens unit. In addition, the present invention relates to the method for active phase correction comprising the step of controlling the wavelength band radiated from the light source so that the absolute values of the real parts of the dielectric constants of the negative index metamaterial and positive index metamaterial are different, and to the method for improving the resolution of the exposure imaging device in which the negative index metamaterial is formed from a metal-dielectric composite, thereby effectively reducing blurry images without the step of controlling the wavelength band radiated from the light source.

Description

 【Specification】

 [Name of invention]

 Active Phase Correction Method Using Negative Refractive Index Metamaterials, Exposure Imaging Apparatus and System Using the Same

 Technical Field

 The present invention relates to an active phase correction method using a negative refractive index metamaterial, an exposure imaging apparatus and system using the same, and a method of improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial. More specifically, the present invention provides a light refractive index metamaterial layer having a negative refractive index of a light source unit, a light source control unit for adjusting the wavelength of electromagnetic waves irradiated from the light source unit, a pattern unit containing information of an object to be exposed or a circuit arrangement; An exposure imaging system including a lens unit disposed on both sides of the negative refractive index meta-material layer and having a positive refractive index material layer, and a recording unit for recording electromagnetic wave information passing through the lens unit; An active phase correction method comprising the step of adjusting the wavelength range of the negative refractive index metamaterial and the absolute real part of the positive refractive index material to be inconsistent; and the negative refractive index metamaterial is composed of a metal-dielectric composite material. Thus, without adjusting the wavelength band irradiated from the light source unit already The present invention relates to a method for improving the resolution of an exposure imaging apparatus that can effectively reduce the spreading phenomenon.

 Background Art

 Optical imaging technology, which is attracting attention as the next generation technology, has been an obstacle to the development of high resolution imaging technology because its accuracy, processing precision and productivity are superior to any other methods, but the resolution cannot be shorter than the wavelength due to diffraction limits.

 In order to overcome such diffraction limits, researches are actively conducted in various fields around the world, and in particular, near-field optical phenomena generated by plasmonic resonance or phonon resonance are conventional light optics. It has a characteristic that is not seen at, and has a high potential of realizing high resolution.

On the other hand, the diffraction limit (diffraction limit) Resolution Pharmaceuticals ol as as one method to overcome, shown in Figure 2, has a negative dielectric constant or ^"negative permeability ol of negative refractive index metamaterials two years 2000 JB Pendry by (JB Pendry, Phys. Rev. Lett. 85, 3966 (2000)), the negative refractive index metamaterial, as shown in FIG. As described above, high resolution above the diffraction limit can be obtained by introducing into a near-field optical imaging system (N. Fang et al., Science 308, 534-537 (2005)).

 The difference in the refractive index metamaterial from other techniques that overcome the diffraction limit is that surface plasmon resonance or phonon resonance is generated in the electromagnetic wave band of a specific wavelength, which is exponent depending on the traveling distance of the electromagnetic wave. By reconstructing the evanescent wave, which is extinct numerically, high resolution beyond the limit is possible. As can be seen, it is highly compatible with conventional photolithography and optical imaging techniques (RJ Blaikie et al, J. Opt. A. 7 S176 (2005)).

 On the other hand, the negative refractive index meta-materials, despite these advantages, the index matching method (a method of matching the refractive index or the real part size of the dielectric constant of the refractive index meta-materials and the surroundings of the refractive index meta-materials used in the past) In this case, image blurring due to the absorption of electromagnetic waves of a medium inevitably occurs, which causes a decrease in the transmittance of electromagnetic waves and a phase change of spatial frequency components, thereby significantly reducing imaging resolution and resolution. Let me down.

In general, the optical transfer function (0TF) is used to measure the image quality of an optical system. The optical transfer function 0TF is expressed as MTF (k _x ) exp [-iPTF (k _x )]. ， Where the modulation transfer function (MTF)

Function) is a value indicating the magnitude of lOTFl, and a phase transfer function (PTF) represents a phase of 0TF.

If the value of the optical transfer function (0TF) is 1 at a spatial frequency (k _x ) over a wide range (Δ1ί _χ ), the Near Field Super Lens (NFSL) displays the information of the object plane. It is a perfect lens that perfectly restores the image plane and has a resolution of about l / (Ak _x ). Therefore, the research trends up to now have been made to improve the modulation transfer function (MTF) to obtain the perfect lens condition in the index match situation. However, electromagnetic wave absorption of materials inevitably occurs in constructing an image system using a negative refractive index metamaterial, which causes an image spreading phenomenon, which makes it impossible to completely restore the phase information of the object plane to the image plane. The phase control of the function is also a significant factor in the image quality. In order to prevent such degradation, the optical system generally uses a phase retrieval method (adaptive optics), but it includes a measurement unit for collecting the distorted wavefront information of the image and the distorted information. The need for a feedback device to restore and deliver to the adaptive optics device has been necessary to avoid the complexity of the optical system configuration and increased system size. Especially in near field imaging systems, it is very difficult to obtain wavefront information of distorted images. The restore method could not be used.

 Accordingly, the inventors can recover near-diffraction limits by restoring near-fields, as well as the refractive index metamaterial imaging field, which is easy to implant technology into existing semiconductor processes and equipment without complex molding openings and periodic structures. To develop an active phase correction method and an optical imaging device and system using the same, which can minimize image degradation caused by the number of electromagnetic hops of a medium without introducing a complicated optical system configuration or a system for phase recovery. I did it.

[Detailed Description of the Invention]

 [Technical problem]

 SUMMARY OF THE INVENTION An object of the present invention is to provide a high resolution exposure imaging apparatus and system that is capable of nano resolution by restoring a near field and transferring spatial information beyond the diffraction limit to the object plane to the image plane and ultimately suitable for nano and bio imaging. It is.

 In addition, an object of the present invention is to use a planar metal or dielectric thin film without complex molding openings and periodic structures to facilitate the implantation of technology into existing semiconductor processes and equipment, and the optical imaging device and system having excellent scalability to integration and large area imaging. To provide.

 In addition, an object of the present invention is to apply the index mismatched refractive index metamaterial to the micro-optical system, which is difficult to measure the wavefront information and can not install a separate feedback device, so that by the number of electromagnetic hops without manual correction device It provides an active phase correction method to compensate for the spreading phenomenon and to actively correct the distorted image.

 Technical Solution

In order to achieve the object as described above, the present invention provides electrons in the incident wavelength band Light-transparent material layer that does not absorb waves: A photomask layer composed of a light-opaque material that does not transmit incident light having a constant wavelength, and has a patterned photomask layer containing information of an object or circuit arrangement to be exposed: having a positive refractive index A first refractive index material layer spaced apart from the photomask layer and the negative refractive index metamaterial layer; A lens layer having a negative refractive index and a negative refractive index in which an absolute value of the dielectric constant real part of the first positive refractive index material layer does not match; A lens stack layer having a positive refractive index and comprising a second birefringent material layer spaced apart from the negative refractive index metamaterial layer and the recording layer; and a photosensitivity for recording electromagnetic wave information transmitted through the material layers An exposure imaging apparatus comprising a recording layer made of a material is provided.

 On the other hand, in order to achieve the above object, the present invention is a light source unit for irradiating electromagnetic waves having a certain wavelength; By adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, the light source control unit for adjusting the absolute value of the real part of the dielectric constant portion of the birefringent material layer and the negative refractive index meta-material layer constituting the lens unit; A pattern unit including an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and containing information of an object to be exposed or an array of circuits; The negative refractive index is composed of a negative refractive index metamaterial layer and a positive refractive index material layer ^ having positive refractions located on both sides of the negative refractive index metamaterial layer, and the positive refractive index material layer and the negative refractive index of the metamaterial layer A lens unit having a negative absolute value; And a recording unit made of a photosensitive material for recording electromagnetic wave information transmitted through the super lens unit.

 On the other hand, in order to achieve the object described above, the present invention has a light source unit, a light source control unit for adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, a pattern unit containing the information of the object or circuit array to be exposed, having a negative refractive index An exposure imaging system including a lens unit including negative refractive indices on both sides of the metamaterial layer and the negative refractive index metamaterial layer and having a positive refractive index material layer, and a recording unit for recording electromagnetic wave information passing through the lens unit. The method of claim 1, further comprising adjusting the wavelength band irradiated from the light source unit such that the absolute value of the dielectric constant part of the negative refractive index metamaterial and the positive refractive index material does not match. Here, the lens stack layer or the lens unit may be formed in plural at regular intervals, and the birefringence material layer may be made of a dielectric substance.

In addition, the negative refractive index meta-material layer is negative refractive index, such as silver (Ag) or gold (Au) thin film It may be formed of any metal thin film having the birefringence material layer may be a free space made of air (free space), PMMA (PolyMethyl Meth Acrylate) or SiC.

And, the real dielectric part (ε ') of the negative refractive index meta-material layer is in the range =-+ ()-(€-3 to Λ =-(^ i) ² + () ^-() ^ * 0,3 Where the value of ε " _Μ is the imaginary imaginary part of the refractive index metamaterial (ie ε _Μ = ε ^* _M + i · ε" _Μ ), and the intrinsic loss of electromagnetic waves caused by the medium Ε 'Ί value is the dielectric imaginary part of the birefringent material (ie ε! = Ε Ί + i-ε' Ί) The negative refractive index metamaterial layer is a SiC dielectric, Ti0 ₂ dielectric or carbon Carbon nano tube (CNT) thin film may be made of any dielectric thin film having a negative refractive index, the positive refractive index material layer may be a free space (Si0 ₂ ) or made of air.

In addition, the real dielectric constant portion (ε ') of the negative refractive index ^' meta material layer is in the range of + ι

It can have Where ε " _Μ is the imaginary imaginary part of the negative refractive index metamaterial (ie ε _Μ = ε 'M + i · ε), which implies the intrinsic loss of electromagnetic waves by the medium, ε' Ί The value is the relative imaginary imaginary part of the material (ie _{ε ι} = ε Ί + ί · ε ') of the birefringence. The present invention also provides the negative refractive index metamaterial layer of the exposure imaging apparatus having the above-described configuration. It consists of a metal-dielectric composite material, not a metal or dielectric pure material, and adopts a metal-dielectric composite material having a relatively low degree of image blurring on a light source having a constant wavelength. Another technical subject is a method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial.

In addition, the present invention, in manufacturing the negative refractive index meta-material layer of the exposure imaging system having the above configuration, consisting of a metal-dielectric composite material, not a metal or dielectric pure material, a fixed wavelength without replacing the light source Another technical gist of the present invention is to improve the resolution of an exposure imaging apparatus using a negative refractive index metamaterial, which employs a metal-dielectric composite material having a relatively low degree of image blurring. Advantageous Effects

 The present invention corresponds to the phase of a phase transfer function (optical transfer function) by giving an index mismatching condition to the negative refractive index metamaterial and the surrounding refractive index material with variable incident wavelengths. By controlling the spread of the image due to the absorption of electromagnetic waves, it is possible to eliminate the degradation of the image performance, which is a disadvantage of the refractive index metamaterial imaging system. As described above, by applying inconsistent negative refractive index metamaterials to a micro-optical system that is difficult to measure wavefront information and cannot install a separate feedback device, image spreading by electromagnetic wave absorption is eliminated without a manual correction device. You can correct and actively correct distortion images.

 In addition, this enables high resolution by restoring the near field and transmitting spatial information beyond the diffraction limit on the object plane to the image plane, ultimately enabling high resolution exposure imaging devices and systems suitable for nano and bio imaging. In addition, optical imaging devices and systems that can be easily implanted into existing semiconductor processes and equipment and that are highly scalable to integration and large area imaging can be implemented using only planar metal or dielectric thin films without complicated molding openings and periodic structures. And, in constructing the negative refractive index metamaterial, by artificially designing and controlling the dielectric by applying a metal-dielectric composite material rather than a pure metal or dielectric material, the index mismatch with the positive refractive index material without changing the incident wavelength By controlling the phase transfer function by applying a condition, it is possible to reliably correct the image spreading phenomenon caused by the absorption of electromagnetic waves.

 Accordingly, in applying the active phase correction technique of the exposure imaging apparatus to the existing imaging apparatus, it is possible to remove the image spread phenomenon and increase the clarity by a simple operation of replacing the refractive index metamaterial, so that the light source must be replaced. It has high compatibility with existing exposure imaging apparatuses without any economic burden.

 [Brief Description of Drawings]

 1 is a conceptual diagram briefly showing the principle of a phase correction technique using a negative refractive index metamaterial and the structure of an imaging system.

 2 is a conceptual diagram briefly illustrating an imaging principle using a negative refractive index metamaterial.

3 is a cross-sectional view illustrating a principle of operation of a near field super lens using a silver thin film, which is a negative refractive index metamaterial. 4 and 5 are cross-sectional views of a conventional lithographic apparatus and a cross-sectional view of a device in which a silver thin film as a layer of negative refractive index metamaterial is added to the conventional lithographic apparatus.

 6 and 7 are graphs showing the object and image energy intensities of the silver thin film near field lens.

8 to 13 are graphs showing MTF and PTF change according to k _x / k _o of the silver thin film near field super lens when the epsilon "value is 0.001, 0.4, and 0.6, respectively.

FIG. 14 is a graph showing the correlation between ε "and ε 'and the relationship between ε' and an incident wavelength according to each k _x / ko range.

 15 to 18 show that a) image clarity when a) index matching conditions are given to the thin film superlens imaging system for various ρ-ρ spacings and slit widths, b) the epsilon 'of the silver film has been index mismatched to -0.92. Image clarity at time c) Image clarity when optimizing the index mismatch condition, and d) ε 'value of the silver thin film satisfying the image clarity when the index mismatch condition is optimized.

19 to 21 show a) the change in visibility with the pp spacing, b) the energy intensity according to the distance, when the pp spacing is 87 nm in optical imaging using the silver thin film near field superlens ( _ε " = 0.4). And c) a graph showing a change in energy intensity with distance when the pp interval is llOnm.

22-25 are a) a graph showing the dielectric constant dispersion of SiC, a dielectric having a negative dielectric constant, and Si0 ₂ , a positive refractive index material surrounding it, and b) an index into the SiC superlens imaging system for various pp spacings and slit widths. This graph shows the image clarity when the matching method is given, c) the image clarity indicated by optimizing the index mismatch condition, and the incident wavelength λ value satisfying the image clarity indicated by optimizing the index mismatch condition.

Figures 26 to 30 show a) the image clarity at a fixed incident wavelength of 10./m in a SiC superlens imaging system and b) the MTF of the SiC superlens imaging system for k _x / k _o and incident wavelength. c) MTF for k _x / ko in the index matching condition (incident wavelength: ll / mi) and the index mismatch condition (incident wavelength: l (). m), d) sharpness according to the pp spacing when the slit width is 360 nm. (visibility) change, and e) In optical imaging using a SiC dielectric thin film near field superlens, it is a graph showing a lateral transfer intensity distribution passing a pp slit of 0.93 and a double slit having a 360 nm slit width.

31 and 32 show an index matching condition (incidence wavelength: lljMn) and an index mismatch condition (input). Four wavelengths: 10. ffli) is a graph showing the pp spacing (minimum decomposition interval) and peak intensity of electromagnetic waves according to the obtained clarity when the slit width is 360 nm.

 33 is a graph illustrating the change in permittivity of the composite material according to the mixing ratio of the metal-dielectric composite material.

 [Form for implementation of invention]

 An active phase correction method using a negative refractive index metamaterial and an exposure imaging apparatus and system using the same according to the present invention will be described in detail below with reference to the following drawings. The exposure imaging apparatus according to the present invention comprises a light-transparent material layer that does not absorb electromagnetic waves in an incident wavelength band: composed of a light-opaque material that does not transmit incident light having a constant wavelength, and contains information of an object or circuit arrangement to be exposed. A photomask layer having a pattern comprising: a first positive refractive index material layer having a positive refractive index and spaced apart from the photomask layer and the negative refractive index meta material layer; A negative refractive index lens layer having a negative refractive index and inconsistent absolute values of the first real refractive index material layer and the dielectric constant part; A lens stack layer having a positive refractive index, the second refractive index material layer separating the negative refractive index metamaterial layer and the recording layer; and a photosensitive material for recording electromagnetic wave information transmitted through the material layers The recording layer which consists of: All is included.

 In addition, the exposure imaging system according to the present invention includes a light source unit for irradiating electromagnetic waves having a predetermined wavelength; By controlling the wavelength of the electromagnetic wave irradiated from the light source unit, the light source control unit for controlling the absolute value of the dielectric constant real part of the positive refractive index material layer and the negative refractive index meta-material worm constituting the lens unit; A pattern unit including an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and containing information on an object to be exposed or a circuit arrangement; It is composed of a negative refractive index metamaterial layer having a negative refractive index and a positive refractive index material layer located on both sides of the negative refractive index metamaterial layer and having a positive refractive index, and the dielectric constant of the positive refractive index material layer and the negative refractive index metamaterial layer A lens unit having a negative absolute value; And a recording unit made of a photosensitive material for recording electromagnetic wave information transmitted through the super lens unit.

The method of correcting a phase of the exposure imaging system using the exposure imaging apparatus may include adjusting a wavelength band irradiated from the light source unit such that the absolute value of the dielectric constant part of the negative refractive index metamaterial and the positive refractive index material does not match. Contains do.

 In the conventional exposure imaging apparatus (FIG. 4) which is generally used, light imaging is performed by the incident light passing through the photo mask layer directly onto a recording layer made of a photosensitive material, and therefore, the resolution of λ / 2 or less of the incident wavelength ( It was difficult to have a resolution. However, by inserting a lens layer using a negative refractive index metamaterial into an existing exposure imaging apparatus (FIG. 5), resolutions up to λ / 5 of incident wavelengths for silver thin film superlenses and λ / 14.2 for SiC dielectric superlenses are achieved. (resolution) can be improved.

 The negative refractive index metamaterial (FIGS. 1 and 2) inserted into the exposure imaging apparatus is a material having a negative dielectric constant or negative permeability, and has been in the spotlight as an alternative for overcoming the resolution limitation due to the diffraction limit. That is, by introducing the negative refractive index metamaterial into the optical imaging system using the near field (Fig. 3), the surface refractive plasmon resonance or the phonon resonance in the electromagnetic wave band of the specific wavelength By reconstructing the evanescent wave that exponentially disappears according to the traveling distance of the electromagnetic wave, high resolution above the diffraction limit can be obtained.

 In addition, the negative refractive index metamaterial is a flat slab structure capable of large-area imaging and does not require geometric deformation or processing, and is easily applied to conventional optical lithography and optical imaging techniques as shown in FIGS. 4 and 5. It is possible.

 On the other hand, even though the negative refractive index metamaterial has the above-mentioned resolution improving effect, when incident light passes through the medium having the negative refractive index, image blurring occurs due to the absorption of electromagnetic waves of the medium, which is the electromagnetic wave. The transmittance decreases and the phase change of the spatial frequency components causes the imaging resolution to be significantly reduced.

 In order to prevent such degradation, the optical system generally uses a phase retrieval method (adaptive optics), but it includes a measurement unit that collects distorted wavefront information of the image and distorted information. The need for a feedback unit to recover and deliver it to adaptive optics devices inevitably increased the complexity of the system configuration and increased system size.

On the other hand, the conventional optical system using the negative refractive index metamaterial has an index matching method, i.e., the refractive index of the negative refractive index metamaterial and the surroundings of the positive refractive index material that surrounds or match the absolute value of the real part of the dielectric constant It was common to use the method, but through this the image spread by electromagnetic wave absorption There was a problem in overcoming blurring.

 In contrast, the imaging apparatus of the present invention imparts index mismatching conditions to the material of the refractive index metamaterial and the surroundings of the surroundings, thereby providing a phase transfer function (phase transfer function) phase. By controlling the spread of the image due to the absorption of electromagnetic waves, it is possible to solve the degradation of the image performance, which is a disadvantage of the refractive index metamaterial imaging system. ·

 In this case, the lens stack layer or the lens unit including the negative refractive index metamaterial given the index mismatch condition may be applied as a single layer or formed as a multi-layer at regular intervals as necessary. Can be.

In addition, the negative refractive index metamaterial layer may be any material having a negative dielectric constant or negative permeability, preferably, a negative film such as silver (Ag) or gold (Au) thin film in the UV incident wavelength range Any metal thin film with refractive index, SiC dielectric, Ti0 ₂ dielectric or carbon nanotubes (CNT, Carbon Nano) in the mid-IR incident wavelength region

Tube) Any dielectric thin film having a negative refractive index such as a thin film can be used.

On the other hand, the birefringent material layer may be any commercially available dielectric material, and free space made of air in the case of using a negative refractive index meta-material for a metal thin film such as silver (Ag) or gold (Au) thin film (free space), PMMA (PolyMethyl MethAcrylate) or SiC can be used as a birefringent material, and a negative refractive index metamaterial such as SiC dielectric, Ti0 ₂ dielectric or carbon nanotube (CNT) thin film In this case, it can be used as a free space made of air or a bilayer refractive index material such as Si0 ₂ .

내지 In addition, the dielectric constant part (ε ' _Μ ) of the negative refractive index metamaterial layer is induced through a series of processes described below to prevent image spreading and degradation of image performance due to electromagnetic wave absorption. In the short wavelength range (UV, visible, near-infrared) ^€ Α'ί

To

의 범위를 가지는 것이 바람직하다 . 여기서， ε % 값은 음굴절률 메타물질의 유전율 허수부 ( 즉, ε_Μ=ε '_M+i · ε "_Μ)이며, 매질에 의한 전자기파 고유 에너지 손실 (intrinsic loss)올 의미하며 , ε 'Ί 값은 양굴절률 물질의 유전율 허수부 (즉, _{ε ι} =ε H · ε )이다. ^€ Μ '= ―. It is preferable to have a range of V (ei) ² + ΟΪ) ^2- {€ _M f +03, and for a long incident wavelength (mid-infrared, ΤΗζ region), ^e ᅳ; ^{) 2 + () 2- ) 2} — 1 to

It is desirable to have a range of. here, The ε% value is the imaginary imaginary part of the refractive index metamaterial (ie, ε _Μ = ε ' _M + i · ε " _Μ ), which means the intrinsic loss of electromagnetic waves caused by the medium, and the value of ε' Ί The dielectric constant imaginary part of the bi-refractive index material (ie _{ε ι} = ε H · ε).

 Hereinafter, a brief description will be made of a process of deriving a real dielectric constant (ε 'Μ) of the negative refractive index metamaterial layer to which the index mismatching condition is applied.

 In the most typical near-field superlens imaging system structure as shown in Fig. 1, when the light in the transverse magnetic field (ΤΜ) mode is projected, the optical transfer function of the lens stack composed of the negative refractive index metamaterial and the positive refractive index material surrounding both sides (0TF) ) Is expressed as [Equation 1]

 OTFfe) = MTF (¾) exp [-PTF (¾)] The Optical Transfer Function (OTF) is a function of the spatial frequency, and the MTF and phase corresponding to the amplitude or magnitude of the OTF. It is expressed as a PTF corresponding to

또한, ！ 와

1 + ！ )는 i번째 물질에서 j번째 물질로의 프레넬 반사계 수, 투과계수를 각각 나타내며， 이때， 대상물체로부터 이미지까지의 광학전달함수 (0TF)는 하기 식과 같이 주어진다. On the other hand, can be described by the Fresnel equations represent the transmission and reflectance of the multi-layer thin-film negative is multiplied by the electromagnetic wave ceremony in refractive index metamaterial transmission and positive refractive index material can exhibit an optical transfer function _(0TF) of the lens stack eu where, k _x Is the transverse wavelength vector and k _z ⁽ ' ⁾ refers to the wave number from the i medium to the z direction. When i is 1, 2, M, as shown in Fig. 1, k _z ⁽ ' ⁾ is given by

Also,！ Wow

1 +！) represents Fresnel reflection coefficient and transmission coefficient from the i-th material to the j-th material, respectively, wherein the optical transfer function (0TF) from the object to the image is given by the following equation.

 [Equation 2]

t \ _M t _M2 exp (ik _z ^(l) di) ep (ikf ⁾ d ₂ )

이다. 이때， r_M 과 r_M2 는 하기 식과 같이 나타낼 수 있 다. = exp (-ik ^ d _M ) + r _lM r _M1 exp (ik { ^M ^ d _M ) Here, the dielectric constant of a positive-index material is ε ^ ε ^ ε Ί + ί · ε, and the permeability is ^ and _{μ2 = 1,} because the size of the imaging system, much smaller than the incident wavelength, ^ ssiin high ᄋ frequency limit between ^■ (high Applying spatial frequency imit

to be. At this time, r _M and r _M2 can be expressed as follows.

음굴절률 메타물질의 유전율은 ε_Μ=ε '_M+i - ε "_Μ으로 주어지고， 양굴절률 물 질의 유전율은 ε₁₌ε Ί+i - ？； ^으로 주어지며， d_M= +^이므로， 높은 공간상의 진 동수 (k_x /ko» 1) 한계에서 광학전달함수는 하기 식과 같이 주어진다. 【수학식 4】 [Equation 3]

The dielectric constant of the negative refractive index metamaterial is given by ε _Μ = ε ' _M + i-ε " _Μ , and the dielectric constant of the birefringent material is given by ε _{1 =} ε Ί + i-？; ^ and d _M = + ^ ， At the limit of high spatial vibration (k _x / en »1), the optical transfer function is given by the following equation.

OTF (^)

exp (2 _M )-r

At this time, r _ul is represented as follows.

ΪΜ

( _f ; ₊ ) ² + W '+) ²

Since 0TF must be a real number, i.e., zero FTF for any ( ^/: o), r _1M ² must be real, so the solution is given by the following equation.

 [Equation 5]

^ M- ^ = 0 or f _{+ e} - ^2- ^ = 0 In the refractive index metamaterial imaging system, applying the dielectric constant conditions of the refractive index metamaterial and the birefringence material, that is, ^^ 쯰> ⁰ , ^, ^^ ⁰ , the first solution gives ^ ⁼ ^ ^{= 0} . This means that the phase of the imaging system is always recovered (zero PTF) in the absence of absorption of both the refractive index metamaterial and the birefringence material, so that the maximum MTF condition is an important factor in measuring the performance of the imaging system. The condition will have the largest MTF. This is θ ρ · ^^^ / ^, — ^) ² ^ when ^ ^" ^ 1, so the imaging system behaves like a perfect lens with zero and maximum MTF. Meanwhile, the definition of the optical impedance of the i th material ( ^Ζ '· ⁼ \ ^' · ^{/ £} '·), the second solution can be expressed as

 [Equation 6]

This impedance matching condition is extended to the index mismatch condition, that is, the phase correction condition, when the intrinsic number of hops of the negative refractive index metamaterial and the positive refractive index material is present ('f ^{> 0} ). In the presence of electromagnetic intrinsic absorption in the imaging system, the phase correction condition (zero PTF) is a significant factor in the superlens image resolution because the MTF does not always have a maximum value under the index matching condition. The impedance matching condition, that is, the index mismatch condition may be expressed as the following equation when expressed by the equation for the real part (ε ' _Μ ) of the refractive index metamaterial dielectric constant.

 [Equation 7]

That is, the real part of the dielectric constant of the negative refractive index metamaterial is equal to the above formula =-(f, ')-+ () to (e _M '), preferably a wavelength region having a short incident wavelength _(υν ᅳ visible light near infrared) in ^{€ M = - (f ί)} 2 + (^ ί) 2 - (^ Λί) 2 -0.3 ch

^€ = ᅳ + «) Wavelength range of ^{2 + 0} · ³ and long incident wavelength (medium Outside 'THz region) ^Έ Μ' =-) ² + (^ ι ') ²一 (/) ^2-1 to

^ =-(ei) ² + (ei ^/ ) ² -(^) ² + 1 transfers the phase transfer function (optical transfer function) by mismatching the dielectric constant part of the birefringent material Corresponds to the phase of the function)) to prevent the spread of the image due to the absorption of electromagnetic waves.

 The index mismatch condition of the above equation improves the resolution and clarity of the image in the thin film superlens imaging system operating in the UV incident wavelength region and in the SiC dielectric thin film superlens imaging system operating in the mid-IR region. You can check it.

8, 10 and 12 show k _x of the silver thin-film near field superlens when the values of (ε '= -0.7 -0.8 -0.9, -1.0 -1.1) and? / is the graph showing the MTF changes in k _o, 9 11 and 13 are in the index matching discrepancies case, ε "values of 0.001 to 0.4, 0.6 days foil layer near-field Super lens of k _x / k _o when each This graph shows changes in PTF.

 8 and 9, when the absorption loss of the superlens is negligible (ε "= 0.001), the MTF has a value close to 1 at high spatial frequency under the index matching condition, and the PTF is 0 at almost all ε '. The phase is almost recovered, with a value close to, so that the best image quality appears at the index match condition that represents the highest data rate.

 On the other hand, when the loss due to electromagnetic wave absorption of the thin film is not negligible as shown in FIGS. 10 11, 12 and 13 (ε "= 0.4 0.6), the MTF is reduced to a similar size in case of index matching and index mismatch. The phase (PTF) adjustment of 0TF is critical to image reconstruction.

 As can be seen in Figures 11 and 13, in the case where ε "value is 0.4, PTF shows a tendency to converge to" 0 "when ε 'is one 0.92, and in the case where ε" value is 0.6, PTF is ε' Is -0.80, it tends to converge to "0", which is the same result as expected from the above equations.

In other words, in the case of the silver thin film in which the loss due to the electromagnetic wave absorption of the medium is present, phase adjustment of 0TF is possible under the index mismatch condition. It will play a big role in optimizing. FIG. 14 is a graph showing the correlation between ε 'and ε' and the relationship between ε 'and the incident wavelength for each k _x / ko range, where the dashed line is 6 <k _x / ko <8 and the dotted line is 12 Correlation at <k _x / ko <13, with solid line at k _x / ko → ∞, which satisfies the zero PTF condition at high spatial frequencies as above.

(양굴절률 물질: _{free space)}곡선의 일부이다. -

(Birefringence material: _{free space)} is part of the curve.

 The epsilon 'adjustment of the silver thin film superfield superlens for mismatching an index can be realized by adjusting the wavelength of incident light, as represented by the dashed-dashed line in FIG. In the embodiment shown in Figure 14 can be implemented as a light source that can be adjusted from 330nm to 341rai using a UV lamp as a spectrometer.

 Lateral transfer intensity distribution through a double slit of nanoscale listed in the X-axis as shown in FIG. intensity distribution) and its sharpness (visibi 1 ity, V) were calculated.

The field distribution in the image plane E _{iffi g} (x) is obtained by an inverse Fourier transform of E _obj (k _x ) as in the following equation.

 [Equation 8]

E _img W

도 15와 16은 다양한 p-p 간격 (도 1 참조)과 슬릿너비에 대하여 은박막 수퍼 렌즈 이미징 시스템에 인덱스 일치 조건이 부여되었을 때의 이미지 선명도와 은박 막의 ε '이 -0.92로 인덱스 불일치되었을 때의 이미지 선명도를 나타내는 그래프이 다. 이 경우, 도 16의 선명도가 도 15의 선명도보다 현격히 향상됨을 확인할 수 있 으며 특히， ρ— ρ 간격과 슬릿너비가 더욱 작아지는 경우에 있어서도 이미지 선명도 가 우수하게 획득될 수 있음을 알 수 있다.

Figures 15 and 16 show the image clarity when the index matching condition is applied to the silver thin film super lens imaging system for various pp spacings (see FIG. 1) and slit width. Sharpness graph. In this case, it can be seen that the sharpness of FIG. 16 is significantly improved than the sharpness of FIG. 15. In particular, it can be seen that the image sharpness can be excellently obtained even when the ρ—ρ interval and the slit width become smaller.

 17 and 18 are graphs showing image clarity and ε ′ values of silver thin films corresponding to index mismatch conditions optimized for various ρ-ρ intervals and slit widths. In the case of controlling wavelength ε 'of the silver thin film as shown in FIG. 18, maximum image clarity is possible for each Ρ-Ρ interval and slit width as shown in FIG. 17, which is illustrated in FIG. 16 (ε' = -0.92). Even more improved sharpness.

Optimized by index matching, index mismatch and equation (7) in FIGS. 19, 20, 21 In the case of index mismatches, the sharpness and lateral transfer intensity distributions are shown by the pp spacing and slit width parameters.

 19 shows the sharpness according to the p-p interval when the slit width is 20 nm, and when the index mismatch condition of the present invention is given, it can be seen that the sharpness of 1.0 is obtained at the I24 nm p-p interval. It can also be seen that the analytical p-p spacing at V = 0.5 decreases from 106nm when ε 'is -1.0 to 95nm when ε' is -0.82.

 20 and 21 show lateral transfer intensity distributions through a double slit having a 20 nm slit width and a pp spacing of 87 nm and UOnm, respectively, and in the case of index matching, the resolution of intensity peaks is poor and bumps overlapping peaks (bumps) In the case of index mismatch (ε '= -0.79), the peaks are well separated and the resolution is improved, but the bumps are also suppressed or completely removed. In other words, it can be seen that the phase adjustment approach provides improved image performance.

 The same results can also be found in SiC dielectric superlens imaging systems operating in the mid-IR region.

FIG. 22 is a graph illustrating dielectric constant dispersion of SiC, which is a dielectric having a negative dielectric constant, and Si0 ₂ , a positive refractive index material surrounding the dielectric constant, wherein SiO ₂ is a positive refractive index material of a silver thin film superlens imaging system; It can be seen that the material has an electromagnetic wave absorptance (ε 'Ί ≠ 0) other than "0".

 The SiC dielectric thin film superlens imaging system also used Equation 8 to calculate the lateral transmission intensity distr ibut ion and its clarity (V, Visibility) passing through the double slit listed in the X axis.

 FIG. 23 is a graph showing image sharpness when the index matching method (incident wavelength λ = 11) is applied to the SiC superlens imaging system for various p-p intervals and slit widths. At this time, the image sharpness is about 0.5, so that the sharpness is locally localized in a relatively wide p-p interval and slitner ratio region.

 24 and 10D are graphs showing image clarity and incident wavelength lambda values corresponding to index mismatch conditions optimized for p-p intervals and slit widths. When the incident wavelength corresponding to FIG. 25 is exposed to the SiC dielectric thin film imaging system, a sharply improved image clarity can be obtained as shown in FIG. 24, and a high sharpness can be achieved even at a very small pp spacing and slit width region compared to the incident wavelength. Do.

26 is a technical difficulty for implementing wavelength tunability in an imaging system. In order to solve the problem, it is a graph showing image sharpness when the incident wavelength is fixed at 10.5 // m, and FIG. 27 is a graph showing the MTF of the SiC superlens imaging system for k _x / k _o and the incident wavelength. As shown in FIG. 27, when the incident wavelength is near 10.5 m, not only the phase correction effect of 0TF but also MTF for k _x / k. .

28 is a graph showing the MTF of the k _x / k _o in the index match condition (incident wave = 11 / zm) and index mismatch conditions (incident wavelength = 10.5 / m), wherein the index mismatch conditions are also in the high ₀ It can be seen that we have a good MTF. This is because when there are no electromagnetic hops of the birefringent material surrounding the metamaterial and its surroundings, the MTF becomes the maximum because there is no electromagnetic reflection at the interface of the refractive index metamaterial when index matching conditions are applied. In the above example, which cannot be ignored, the index matching condition is no longer the maximum MTF condition, so the MTF can be improved under the index mismatch condition.

 29 is a graph showing the change in vividness according to the pp spacing when the slit width is 360 nm, and the analytical pp spacing at V = 0.5 is (λ / 4.2) under the index matching condition (incident wavelength = 11). ), It decreases to 0.74 (λ / 14.2) when the index mismatch condition (incident wavelength = 10.5).

 FIG. 30 shows a lateral transfer intensity distribution passing through a pp spacing of 0.93; each with a double slit having a 360 nm slit width in optical imaging using a SiC dielectric thin film near-field superlens and having index matching conditions (incident wavelength = 11). When the image of the double slit cannot be obtained, that is, the resolution cannot be obtained, but in the index mismatch condition (incident wavelength = 10.5), the image of the double slit can be obtained not only with high sharpness, but also laterally than the index matching condition. It can be seen that the transfer intensity distribution is also improved.

 31 and 32 show the pp spacing (minimum resolution interval) according to the clarity obtained when the slit width is 360 nm under the index matching condition (incident wavelength: 11) and the index mismatch condition (incident wavelength: 10.5 / an). These are graphs showing peak intensities.

As can be seen in FIG. 31, the pp interval that can be analyzed at V = 0.5 is an index mismatch condition (square box; incident wavelength = 10.5) at λ / 4 · 2 when the index matching condition (black origin; incident wavelength = lliim). Is improved to λ / 14.2, It can be seen that a high definition of V = 0.6 or more can be obtained with a resolution of about λ / 12. In addition, when the peak intensities of the electromagnetic waves transmitted through the double slit are compared as shown in FIG. 32, the index matching condition (origin; It can be seen that it is more than three times better than the incident wavelength = 11).

In order to implement such an index mismatch condition in a SiC dielectric thin film superlens imaging system, a wavelength variable C0 ₂ laser or an FTIR microscope may be used as a light source.

 As described above, the present invention controls the phase transfer function by adjusting the incident wavelength to give an index mismatching condition to the meta-material and the bi-refractive index material surrounding the surroundings, thereby controlling the phase transfer function, thereby absorbing electromagnetic waves. By correcting the image spreading phenomenon by this, it is possible to solve the degradation of the image performance, which is a disadvantage of the refractive index imaging system.

 In addition, this enables high resolution by restoring the near field to transmit spatial information beyond the diffraction limit on the object plane to the image plane, and ultimately to realize a high resolution exposure imaging device and system suitable for nano and bio imaging. In addition, optical imaging devices and systems that can be easily implanted into existing semiconductor processes and equipment and that are highly scalable to integration and large area imaging can be implemented using only planar metal or dielectric thin films without complicated molding openings and periodic structures. However, in applying an active phase correction method using a negative refractive index metamaterial having the above structure, the negative refractive index metamaterial layer is formed of a pure metal or dielectric material such as silver (Ag) or gold (Au) thin film. In this case, there is a hassle that needs to replace the light source of the existing exposure imaging apparatus for the implementation, and may cause a decrease in compatibility with the existing exposure equipment.

 In constructing the negative refractive index metamaterial layer, when the metal-dielectric composite material is applied, the dielectric constant of the pure material is different from that of the pure material even at a constant wavelength by adjusting the composite ratio of two pure materials having different dielectric constant values. It is possible to implement a phase correction technique of an exposure imaging apparatus by imparting a dielectric constant of.

That is, the method for improving the resolution of an exposure imaging apparatus according to the present invention is based on the effective medium theory, and the intrinsic dielectric constant (hereinafter, negative dielectric constant value) of a pure substance at a fixed wavelength through regular arrangement and irregular mixing of heterogeneous pure substances. Pure matter is the active medium And the technique of designing the dispersion properties of composites with values different from the refractive index.

 Here, the composite material includes the regular and irregular mixing and arrangement of heterogeneous pure materials such as metals, dielectrics, and semiconductors, and the regular and irregularities of two or more materials whose optical properties have changed through artificial treatment of pure materials. It refers to an active medium produced by mixing and arranging.

 Active media include negative refractive index metamaterials as well as natural materials with negative real-field permittivity values that can cause surface plasmon resonance (SPR) and phonon resonance phenomena. Materials include even natural or artificially designed metamaterials with negative permittivity or negative permeability in the electromagnetic wave band at a particular wavelength.

 Effective medium theory covers the UV, Optical, IR, THz, and Microwave domains. In all electromagnetic fields, it is used to determine the regular or irregular arrangement and mixing of materials with different properties, such as metals, dielectrics, and semiconductors. By means of the analysis method for a composite material having a dielectric constant and refractive index different from that of the pure material.

 In configuring the negative refractive index metamaterial with a metal-dielectric composite material, as can be seen in the graph of FIG. 33, by applying various metal volume mixing ratios, a fixed wavelength (700 nm), that is, without replacing the light source It is possible to design and vary the optimized permittivity (ε).

 The phase correction technique by changing the wavelength of the exposure equipment light source is to change the dielectric constant by using the dispersion property inherent to the lens layer according to the wavelength, whereas the metal-dielectric composite material method based on the effective medium theory, By adjusting the dielectric constant of the lens layer based on the metal-dielectric composite material without changing the wavelength within the dielectric constant range of various pure materials mixed in a light source having a constant wavelength, it is possible to implement an exposure imaging apparatus using a phase correction technology.

That is, in implementing an exposure imaging system based on the negative refractive index metamaterial, the dielectric constant at a fixed wavelength is artificially designed and controlled by replacing the negative refractive index composed of the pure material with the metal-dielectric composite material. In order to improve the imaging resolution and contrast, it is possible to correct the phase shift of spatial frequency components caused by the image spreading problem due to the absorption of electromagnetic waves. Can be used.

 Therefore, according to the method for improving the resolution of an exposure imaging apparatus using a negative refractive index metamaterial according to the present invention, the negative refractive index is artificially designed and controlled by controlling the dielectric constant of the metamaterial, thereby indexing the birefringent material without changing the incident wavelength. By applying a mismatch condition to control the phase transfer function, it is possible to reliably correct the image spread phenomenon caused by the absorption of electromagnetic waves.

 Accordingly, in applying the phase correction technique of the exposure imaging apparatus to the existing imaging apparatus, it is possible to remove the image spread phenomenon and increase the clarity by simply replacing the refractive index metamaterial, thereby replacing the light source. It has high compatibility with existing exposure imaging apparatuses without any economic burden.

 The invention is not limited to the specific embodiments and descriptions set forth above, and various modifications can be made by those skilled in the art without departing from the spirit of the invention claimed in the claims. It is possible for such modifications to fall within the protection scope of the present invention.

Claims

[Range of request]  [Claim 1]  Layer of transparent material that does not absorb electromagnetic waves in the incident wavelength band:  It is composed of a light-opaque material that does not transmit incident light having a predetermined wavelength, and has a positive refractive index of a photomask in which a pattern containing information of an object or a circuit array is exposed. The photomask layer is spaced apart from the negative refractive index metamaterial layer. The first birefringent material layer; A negative refractive index lens layer having a negative refractive index and having an absolute value of the first positive refractive index material layer and an absolute value of a dielectric constant real part; A lens stack layer having a positive refractive index and comprising a second positive refractive index material layer separating the negative refractive index meta material layer and the recording layer; and  A recording layer made of a photosensitive material for recording electromagnetic wave information transmitted through the material layers:  Exposure imaging apparatus comprising a. [Claim 2]  The exposure imaging apparatus of claim 1, wherein a plurality of the lens stack layers are formed at regular intervals. [Claim 3]  2. An exposure imaging apparatus according to claim 1, wherein said birefringent material layer is made of a dielectric substance. [Claim 4]  The exposure imaging apparatus of claim 1, wherein the negative refractive index metamaterial layer is formed of a thin film of silver (Ag) or gold (Au). [Claim 5] The exposure imaging apparatus according to claim 3 or 4, wherein the birefringent material layer is free space made of air, polymethyl methacrylate (PMMA), or SiC. [Claim 6] The dielectric constant part ε 'of the negative refractive index metamaterial layer is from 1 to V (ei) ² + () ^2- () ² -0.3. ^€ M '=-V () ^? + (€ Ι) ^? -(€ Λ /) ² Exposure imaging device, characterized in that it has a range of +0.3. Here, ε " _Μ value is the imaginary imaginary part of the refractive index metamaterial (that is, ε _Μ = ε ' _Μ · ε), which means the intrinsic loss of electromagnetic waves by the medium, ε" ι value is The dielectric constant imaginary part of the birefringent material (ie _{ε ι} = ε ε + i · ε). [Claim 7] The exposure imaging apparatus of claim 1, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a Ti0 ₂ dielectric, or a carbon nanotube (CNT) thin film. [Claim 8] 8. An exposure imaging apparatus according to claim 3 or 7, wherein the birefringent material layer is free space made of air or Si0 ₂ . (Claim 9) 8. The dielectric constant part ( _ε ') of the negative refractive index metamaterial layer is (fi) ² + ( ² -(^) ² -i to ^ =-(i) ² ₊ «). An exposure imaging apparatus having a range of ² -(^) ² + i. Here, the value of ε " _Μ is the imaginary imaginary part of the metamaterial (ie ε _Μ = ε ' _Μ + ί · ε), which means the intrinsic loss of electromagnetic waves due to the medium, and the value of ε" ι Is the dielectric imaginary part of the birefringent material (ie _{ε ι} = ε Ί + i ε). [Claim 10] A light source unit irradiating electromagnetic waves having a predetermined wavelength; A light source controller configured to adjust the wavelength of the electromagnetic wave emitted from the light source unit so that the absolute value of the dielectric constant part of the birefringent material layer and the negative refractive index metamaterial layer constituting the lens unit is inconsistent;  A pattern unit including an optically opaque material through which electromagnetic waves incident from the light source unit cannot pass, and containing information on an object to be exposed or a circuit arrangement;  Negative refractive index having a negative refractive index is located on both sides of the meta-material layer and the negative refractive index meta-material layer and composed of a positive refractive index material layer having a positive refractive index, the real dielectric constant portion of the positive refractive index material layer and negative refractive index metamaterial layer A lens unit having an absolute value mismatch; A recording unit made of a photosensitive material for recording electromagnetic wave information transmitted through the super lens unit;  Exposure imaging system comprising a. [Claim 11]  The exposure imaging system of claim 10, wherein a plurality of the lens units are formed at regular intervals. [Claim 12]  11. An exposure imaging system according to claim 10, wherein said birefringent material layer is comprised of a dielectric substance. [Claim 13]  The exposure imaging system of claim 10, wherein the negative refractive layer is formed of a thin film of silver (Ag) or gold (Au). [Claim 14]  The exposure imaging system of claim 12 or 13, wherein the birefringent material layer is a free space made of air, polymethyl methacrylate (PMMA), or SiC. [Claim 15] The method of claim 12 or 13, wherein the light source control unit, the negative refractive index meta-material Permittivity the real part (ε ') of the layer is ^{= - (ei) 2 + (} () 2 - (/) 2 -0.3 to Exposure imaging system, characterized in that the wavelength of the electromagnetic wave is adjusted to have a range of ^€ M ' ⁼ ᅳ V (0 ² + (e'i) ² -½) ² +0.3. Where ε is the dielectric imaginary part of the negative refractive index metamaterial (ie ε _Μ = ε ' _M + i-ε " _Μ ), which represents the intrinsic loss of electromagnetic waves due to the medium, ε "ι is the dielectric imaginary part of the bi-refractive index material (ie _{ε ι} = ε Ί + i · ε'Ί). [Claim 16] The exposure imaging system of claim 10, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a Ti0 ₂ dielectric, or a carbon nanotube (CNT) thin film. [Claim 17] 17. An exposure imaging system according to claim 12 or 16, wherein the birefringent material layer is free space made of air or Si0 ₂ . [Claim 18] The dielectric constant part ε 'of the negative refractive index meta-material layer is ^{€ Μ} ' ^{= ~} ^ » ^{) 2} + 一^{() 2} ᅳ ¹ to ^E M = ~ Λ ^€ ί) ² + ( ^e '() ² ᅳ ( ^£ M) Exposure imaging system characterized by adjusting the wavelength of electromagnetic waves so that it has a range of ² + 1. Where ε is the dielectric imaginary part of the negative refractive index metamaterial (ie ε _Μ = ε ' _Μ + ί · ε ', Which means the intrinsic loss of electromagnetic waves due to the medium, ε "i value is the imaginary part of the material of the birefringence (ie · ε'Ί). [Claim 19] The light source unit, a light source control unit for adjusting the wavelength of the electromagnetic wave irradiated from the light source unit, the pattern portion containing the information of the object to be exposed or the circuit arrangement negative refractive index The lens unit comprises a negative refractive index metamaterial layer and a positive refractive index material layer positioned on both sides of the negative refractive index metamaterial layer, and has a positive refractive index, and a recording unit for recording electromagnetic wave information passing through the lens unit. In an exposure imaging system,  And adjusting the wavelength band irradiated by the light source unit such that the absolute value of the real part of the dielectric constant of the negative refractive index metamaterial and the positive refractive index material does not match. [Claim 201  20. The active phase correction method of claim 19, wherein a plurality of lens portions are formed at regular intervals. [Claim 21]  20. The method of claim 19 wherein the birefringent material layer is comprised of a dielectric substance. [Claim 22]  20. The active phase correction method of claim 19, wherein the negative refractive index metamaterial layer is formed of a thin film of silver (Ag) or gold (Au). [Claim 23]  23. The method of claim 21 or 22, wherein the birefringent material layer is a free space made of air, polymethyl methacrylate (PMMA), or SiC. [Claim 24] 23. The method according to claim 21 or 22, wherein the wavelength band irradiated from the light source has a dielectric constant part (ε ') of the negative refractive index me material layer of ^{€ Μ} ' ^{= ~} ^ ' ^{) 2} + ^(e ' ^{) 2 "( ) 2} ᅳ ^{0 '3} to ί = 一

Active phase correction method characterized by adjusting to the range of +0.3. Where ε " _Μ value is the dielectric imaginary part of the refractive index metamaterial (ie ε _Μ = ε ' _Μ + ί · ε Ε "ι value is the imaginary imaginary part of the material (ie _{ε ι} = _ε Ί + i · _ε '). [Claim 25] 20. The active phase correction method of claim 19, wherein the negative refractive index metamaterial layer is formed of a SiC dielectric, a Ti0 ₂ dielectric or a carbon nanotube (CNT) thin film. [Claim 26] 26. The method of claim 21 or 25, wherein the birefringent material layer is a free space made of air or Si0 ₂ . [Claim 27] 26. The method according to claim 21 or 25, wherein the wavelength band irradiated from the light source has a dielectric constant real part (ε ') of the negative refractive index metamaterial layer having a value of ^{€ Μ} ' = ᅳ ^{) 2} + (€;) ^2- (e _M). ") ^2-1 to ^E M '= — +«) ^2- ( ^€ ' Μ) Active phase correction method characterized in that it is adjusted to have a range of ² + 1. Where ε is the imaginary imaginary part of the refractive index metamaterial (ie, ε _Μ = ε ' _Μ + ί · ε), which means the intrinsic loss of electromagnetic waves caused by the medium, ε "ι is the dielectric imaginary part of the birefringent material (ie ε ^ ε Ί + ί 'ε' Ί). [Claim 28]  In manufacturing the negative refractive index metamaterial layer of the exposure imaging apparatus according to claim 1, Negative refractive index metamaterial consisting of a metal-dielectric composite material that is not a metal or dielectric pure material, and adopts a metal-dielectric composite material with a relatively low degree of image blurring on a light source having a constant wavelength. A method of improving the resolution of an exposure imaging apparatus using a. ^' [Claim 29]  In manufacturing the negative refractive index metamaterial layer of the exposure imaging system according to claim 10,  It is composed of a metal-dielectric composite material, not a metal or dielectric pure material, and adopts a metal-dielectric composite material having a relatively low degree of image blurring at a fixed wavelength without replacing a light source. A method of improving the resolution of an exposure imaging apparatus using a refractive index metamaterial.