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WO2011149615A3 - Appareil et procédé hybride de dépôt chimique en phase vapeur à fil chaud et de dépôt chimique en phase vapeur activé par plasma - Google Patents

Appareil et procédé hybride de dépôt chimique en phase vapeur à fil chaud et de dépôt chimique en phase vapeur activé par plasma Download PDF

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Publication number
WO2011149615A3
WO2011149615A3 PCT/US2011/034091 US2011034091W WO2011149615A3 WO 2011149615 A3 WO2011149615 A3 WO 2011149615A3 US 2011034091 W US2011034091 W US 2011034091W WO 2011149615 A3 WO2011149615 A3 WO 2011149615A3
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
chemical vapor
reaction zone
showerhead
hotwire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/034091
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English (en)
Other versions
WO2011149615A2 (fr
Inventor
Annamalai Lakshmanan
Truc T. Tran
Nhon Ly
Izidor Voskoboynik
Dustin W. Ho
Tsutomu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2011149615A2 publication Critical patent/WO2011149615A2/fr
Publication of WO2011149615A3 publication Critical patent/WO2011149615A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/453—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating passing the reaction gases through burners or torches, e.g. atmospheric pressure CVD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé et un appareil permettant de fabriquer des films minces pour dispositifs photovoltaïques (PV). Dans un mode de réalisation, la présente invention concerne un appareil permettant de déposer des films minces sur un substrat. Ledit appareil comprend une enceinte comportant une douchette disposée à l'opposé d'un support de substrat et au moins une première source de gaz et une seconde source de gaz en communication fluidique avec une pluralité de zones réactionnelles discrètes de ladite douchette, lesdites zones réactionnelles correspondant à une première zone réactionnelle enfermée dans un espace situé entre un premier côté de la douchette et le support du substrat, ladite première zone réactionnelle étant en communication électrique avec une source d'alimentation en énergie radioélectrique, et à une seconde zone réactionnelle enfermée à l'intérieur d'un second côté opposé de la douchette, ladite seconde zone réactionnelle étant isolée d'un point de vue électrique de la première zone réactionnelle.
PCT/US2011/034091 2010-05-24 2011-04-27 Appareil et procédé hybride de dépôt chimique en phase vapeur à fil chaud et de dépôt chimique en phase vapeur activé par plasma Ceased WO2011149615A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34771710P 2010-05-24 2010-05-24
US61/347,717 2010-05-24

Publications (2)

Publication Number Publication Date
WO2011149615A2 WO2011149615A2 (fr) 2011-12-01
WO2011149615A3 true WO2011149615A3 (fr) 2012-02-02

Family

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PCT/US2011/034091 Ceased WO2011149615A2 (fr) 2010-05-24 2011-04-27 Appareil et procédé hybride de dépôt chimique en phase vapeur à fil chaud et de dépôt chimique en phase vapeur activé par plasma

Country Status (1)

Country Link
WO (1) WO2011149615A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663648A (zh) * 2014-11-26 2017-05-10 应用材料公司 使用比例式热流体输送系统的基板载具
CN108899392A (zh) * 2018-06-22 2018-11-27 江苏微导纳米装备科技有限公司 一种确定单晶硅电池的电注入最佳处理时间的方法
CN109004065A (zh) * 2018-07-27 2018-12-14 浙江晶科能源有限公司 一种提高n型双面电池效率的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205177785U (zh) * 2013-03-14 2016-04-20 应用材料公司 处理腔室及用于将热线源耦接至该处理腔室的装置
CN104505427B (zh) * 2014-10-24 2016-07-13 横店集团东磁股份有限公司 改善晶体硅太阳能电池片lid和pid的方法及装置
CN109155342A (zh) * 2016-05-23 2019-01-04 株式会社钟化 太阳能电池及其制造方法、以及太阳能电池面板
FR3056993B1 (fr) * 2016-10-04 2018-10-12 Kobus Sas Dispositif pour amener un gaz dans un reacteur de depot chimique en phase gazeuse
US12205845B2 (en) * 2020-10-23 2025-01-21 Applied Materials, Inc. Semiconductor processing chamber to accommodate parasitic plasma formation

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090427A (ko) * 1999-01-22 2001-10-18 이데이 노부유끼 성막방법 및 성막장치
JP2002299330A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置および半導体製造装置
JP2003273023A (ja) * 2002-03-12 2003-09-26 Kyocera Corp Ｃａｔ−ＰＥＣＶＤ法、その方法の実施に用いる装置、その方法を用いて形成した膜、およびその膜を用いて形成したデバイス
JP3513505B2 (ja) * 2001-12-26 2004-03-31 三菱重工業株式会社 プラズマｃｖｄ装置、光電変換素子および光電変換素子の製造方法
JP2006269944A (ja) * 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法，温度調整装置，プラズマ処理装置
JP3837718B2 (ja) * 2002-03-12 2006-10-25 キヤノンアネルバ株式会社 Ｃｖｄ装置及びｃｖｄ装置における成膜後の後処理工程を行う方法
KR20080025690A (ko) * 2005-06-20 2008-03-21 램 리써치 코포레이션 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010090427A (ko) * 1999-01-22 2001-10-18 이데이 노부유끼 성막방법 및 성막장치
JP2002299330A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置および半導体製造装置
JP3513505B2 (ja) * 2001-12-26 2004-03-31 三菱重工業株式会社 プラズマｃｖｄ装置、光電変換素子および光電変換素子の製造方法
JP2003273023A (ja) * 2002-03-12 2003-09-26 Kyocera Corp Ｃａｔ−ＰＥＣＶＤ法、その方法の実施に用いる装置、その方法を用いて形成した膜、およびその膜を用いて形成したデバイス
JP3837718B2 (ja) * 2002-03-12 2006-10-25 キヤノンアネルバ株式会社 Ｃｖｄ装置及びｃｖｄ装置における成膜後の後処理工程を行う方法
JP2006269944A (ja) * 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法，温度調整装置，プラズマ処理装置
KR20080025690A (ko) * 2005-06-20 2008-03-21 램 리써치 코포레이션 폴리머 증착을 감소시키는 ｒｆ 흡수 재료를 포함하는플라즈마 한정링

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106663648A (zh) * 2014-11-26 2017-05-10 应用材料公司 使用比例式热流体输送系统的基板载具
CN106663648B (zh) * 2014-11-26 2020-10-02 应用材料公司 使用比例式热流体输送系统的基板载具
US11615973B2 (en) 2014-11-26 2023-03-28 Applied Materials, Inc. Substrate carrier using a proportional thermal fluid delivery system
CN108899392A (zh) * 2018-06-22 2018-11-27 江苏微导纳米装备科技有限公司 一种确定单晶硅电池的电注入最佳处理时间的方法
CN109004065A (zh) * 2018-07-27 2018-12-14 浙江晶科能源有限公司 一种提高n型双面电池效率的方法
CN109004065B (zh) * 2018-07-27 2019-11-29 浙江晶科能源有限公司 一种提高n型双面电池效率的方法

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Publication number Publication date
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