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WO2011147523A1 - Formulation and method for preparation of organic electronic devices - Google Patents

Formulation and method for preparation of organic electronic devices Download PDF

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Publication number
WO2011147523A1
WO2011147523A1 PCT/EP2011/002128 EP2011002128W WO2011147523A1 WO 2011147523 A1 WO2011147523 A1 WO 2011147523A1 EP 2011002128 W EP2011002128 W EP 2011002128W WO 2011147523 A1 WO2011147523 A1 WO 2011147523A1
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WIPO (PCT)
Prior art keywords
group
formulation according
atoms
formulation
organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/002128
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French (fr)
Inventor
Philip Edward May
Mark James
Piotr Wierzchowiec
Stephen Bain
Paul Craig Brookes
Edgar Kluge
Li Wei Tan
David Sparrowe
Magda Goncalves-Miskiewicz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to KR1020127033898A priority Critical patent/KR101943110B1/en
Priority to SG2012085478A priority patent/SG185680A1/en
Priority to CN201180025340.4A priority patent/CN102906216B/en
Priority to RU2012156386/05A priority patent/RU2012156386A/en
Priority to US13/700,298 priority patent/US9206352B2/en
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Priority to JP2013511565A priority patent/JP6309269B2/en
Priority to EP11717956.4A priority patent/EP2576724B1/en
Publication of WO2011147523A1 publication Critical patent/WO2011147523A1/en
Anticipated expiration legal-status Critical
Priority to US14/947,410 priority patent/US11882762B2/en
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • C09B69/101—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing an anthracene dye
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
    • C09B69/00—Dyes not provided for by a single group of this subclass
    • C09B69/10—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds
    • C09B69/109—Polymeric dyes; Reaction products of dyes with monomers or with macromolecular compounds containing other specific dyes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/115—Polyfluorene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1018—Heterocyclic compounds
    • C09K2211/1025—Heterocyclic compounds characterised by ligands
    • C09K2211/1029—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom
    • C09K2211/1037—Heterocyclic compounds characterised by ligands containing one nitrogen atom as the heteroatom with sulfur
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/14—Macromolecular compounds
    • C09K2211/1408—Carbocyclic compounds
    • C09K2211/1416—Condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/14—Macromolecular compounds
    • C09K2211/1408—Carbocyclic compounds
    • C09K2211/1425—Non-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/14—Macromolecular compounds
    • C09K2211/1441—Heterocyclic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/18—Metal complexes
    • C09K2211/185—Metal complexes of the platinum group, i.e. Os, Ir, Pt, Ru, Rh or Pd
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/10—Triplet emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present invention relates to novel formulations comprising an organic semiconducting compound (OSC), to their use as conducting inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells, organic field effect transistors (OFET) and OLED devices, to methods for preparing OE devices using the novel
  • OSC organic semiconducting compound
  • OPFET organic field effect transistors
  • binding agents can be used. These additives are especially needed with regard to light emitting materials and/or charge transporting materials having small molecular weight or polymeric compounds having a low molecular weight.
  • compositions comprising special solvents in order to achieve specific viscosity.
  • Conventional compositions for printing applications like ink jet printing, flexographic or gravure printing need additives to increase ink viscosity and improve film formation.
  • compositions being useful in order to process low molecular weight organic light emitting and charge transporting materials.
  • it is a permanent desire to improve the performance of the OLED layer, such as efficiency, life time and sensitivity regarding oxidation or water.
  • the formulation should enable a low-cost and easy printing process.
  • the printing process should allow a high quality printing at high speed.
  • OE devices especially thin film transistors, diodes, OLED displays and OPV cells, which allow the manufacture of high efficient OE devices having a high performance, a long lifetime and a low sensitivity against water or oxidation.
  • One aim of the present invention is to provide such improved formulations.
  • Another aim is to provide improved methods of preparing an OE device from such formulations.
  • Another aim is to provide improved OE devices obtained from such formulations and methods. Further aims are immediately evident to the person skilled in the art from the following description.
  • the invention relates to a formulation comprising one or more organic semiconducting compounds (OSC), and one or more organic solvents, characterized in that said formulation comprises a viscosity at 25°C of less than 15 mPas and the boiling point of the solvent is at most 400°C.
  • OSC organic semiconducting compounds
  • the invention further relates to the use of a formulation as described above and below as coating or printing ink, preferably for the preparation of rigid or flexible OE devices, in particular for thin film transistors, diodes, OLED devices and rigid or flexible organic photovoltaic (OPV) cells and devices, preferably by flexographic or gravure printing.
  • OCV organic photovoltaic
  • the invention further relates to a process of preparing an organic electronic (OE) device, comprising the steps of a) depositing the formulation as described above and below onto a
  • substrate to form a film or layer, preferably by coating or printing, very preferably by flexographic or gravure printing
  • the invention further relates to an OE device prepared from a formulation and/or by a process as described above and below.
  • the OE devices include, without limitation, organic field effect transistors (OFET), integrated circuits (IC), thin film transistors (TFT), Radio
  • RFID Frequency Identification
  • OLED organic light emitting diodes
  • OLET organic light emitting transistors
  • OLED organic light emitting transistors
  • O-SC organic solar cells
  • O-laser organic laserdiodes
  • O-IC organic integrated circuits
  • lighting devices sensor devices, electrode materials, photocon- ductors, photodetectors, electrophotographic recording devices, capacitors, charge injection layers, Schottky diodes, planarising layers, antistatic films, conducting substrates, conducting patterns, photocon- ductors, electrophotographic devices, organic memory devices, biosensors and biochips.
  • the present invention provides organic light emitting diodes (OLED).
  • OLED devices can for example be used for illumination, for medical illumination purposes, as signalling device, as signage devices, and in displays. Displays can be addressed using passive matrix driving, total matrix addressing or active matrix driving. Transparent OLEDs can be manufactured by using optically transparent electrodes. Flexible OLEDs are assessable through the use of flexible substrates.
  • the formulations, methods and devices of the present invention provide surprising improvements in the efficiency of the OE devices and the production thereof. Unexpectedly, the performance, the lifetime and the efficiency of the OE devices can be improved, if these devices are achieved by using a composition of the present invention. Furthermore, it was surprisingly found that these formulations are suitable for printing techniques, especially for flexographic and gravure printing. Furthermore, the composition of the present invention provides an astonishingly high level of film forming. Especially, the homogeneity and the quality of the films can be improved. In addition thereto, the present invention enables better printing of multi layer devices.
  • the formulations enable a low-cost and easy printing process.
  • the printing processes allow a high quality printing at high speed.
  • the present formulation has a a viscosity at 25°C of less than 15, more preferably less than 13, especially less than 11 and most preferably less than 10 mPas.
  • the formulation has a viscosity in the range of 0.5 to 9.5 mPas, especially from 1 to 9 mPas and more preferably from 1 ,5 to 8.5 mPas.
  • the viscosity is preferably situated in the range of 2 to 6 mPas.
  • the viscosity is determined at a temperature of 25°C by measuring on AR-G2 rheometer manufactured by TA Instruments. This is measured using a parallel plate geometry.
  • the viscosity of the formulation can be achieved by using appropriate solvents and other additives in suitable amounts. Consequently, the formulation of the present invention comprises at least one organic solvent having a viscosity at 25°C of less than 15 mPas and a boiling point of at most 400°C.
  • the solvent has a boiling point or sublimation temperature of ⁇ 400°C, especially ⁇ 350°C, more preferably ⁇ 300°C, most preferably ⁇ 250°C, at the pressure employed, very preferably at atmospheric pressure (1013 hPa). Evaporation can also be accelerated e.g. by applying heat and/or reduced pressure.
  • the boiling point of the solvent, or of the lowest boiling solvent of the solvent blend is at least 130°C, more preferably at least 150°C at atmospheric pressure (1013 hPa).
  • the formulation may comprise a is mixture of organic compounds as solvent having different boiling points and the boiling point of the compound with the lowest boiling point is at least 10°C below the boiling point of the compound with the highest boiling point.
  • the formulation may comprise a mixture of organic compounds as solvent having boiling points and the boiling point of the compound with the lowest boiling point is at most 100°C below the boiling point of the compound with the highest boiling point.
  • n the number of solvents
  • log Pi the log P value of a single solvent in the solvent blend
  • Wj the weight fraction (concentration in % by weight/100) of said solvent in the solvent blend.
  • log P values are measured by measuring the concentration in each phase (e.g. by GC, HPLC, UV/vis etc.) after equilibrating a dilute solution in equal volumes of water and octanol.
  • log P can be calculated by molecular calculation using "Chem Bio Draw Ultra version 1 1.0 (2007)” software, produced and marketed by Cambridge Soft., unless stated otherwise.
  • the logarithm of the partition ratio log P of the solvent, or the weighted average of the partition ratio (log P) w of the solvent blend is >1.5, more preferably > 2 and most preferably > 2.5.
  • these values relate to the calculated log P for each solvent.
  • the solvents can generally be selected from any chemical class that meets the physical criteria mentioned above, including, but not limited to, aliphatic or aromatic hydrocarbons, amines, thiols, amides, esters, ethers, polyethers, alcohols, diols and polyols.
  • the solvent comprises at least one aromatic and/or heteroaromatic compound. Suitable and preferred solvents include for example aromatic
  • hydrocarbons eg halogenated aromatics
  • aromatic hydrocarbons having an alkyl group having 1 to 8 carbon atoms and more preferably 1 to 6 carbon atoms especially toluene, dimethyl benzenes (xylenes), trimethyl benzenes, and methyl naphthalenes
  • aromatic hydrocarbons eg halogenated aromatics
  • aromatic hydrocarbons having an alkyl group having 1 to 8 carbon atoms and more preferably 1 to 6 carbon atoms especially toluene, dimethyl benzenes (xylenes), trimethyl benzenes, and methyl naphthalenes
  • aromatic hydrocarbons eg halogenated aromatics
  • aromatic hydrocarbons having an alkyl group having 1 to 8 carbon atoms and more preferably 1 to 6 carbon atoms especially toluene, dimethyl benzenes (xylenes), trimethyl benzenes, and methyl naphthalenes
  • aromatic compounds comprising hetero atoms may be used such as esters, ethers, nitriles or amides.
  • these compounds include aromatic alkoxy compunds such as 3-methylanisol, 2-isopropylanisol, 5-methoxyindan, 2- ethoxynaphthalene, aromatic esters such as butylbenzoate, ethylbenzoate.
  • heteroaromatic compounds having at least one O, N or S atom in the aromatic ring are preferred. These compounds include e.g. 2- bromo-3-(bromomethyl)thiophene, 2-methylindole, 6-methyl quinoline and thiophene.
  • the solvents can be used as mixture of two, three or more.
  • Astonishing improvements can be achieved with mixtures of hydrocarbon aromatic compounds.
  • the mixture can comprise at least one aromatic hydrocarbon having an alkyl group having 1 to 8 carbon atoms and at least one aromatic hydrocarbon compound having a cycloalkyl group.
  • Preferred organic solvents can comprise Hansen Solubility parameters of H d in the range of 17.0 to 23.2 MPa 05 , H p in the range of 0.2 to 12.5 MPa 0 5 and H h in the range of 0.0 to 20.0 MPa 0 5 . More preferred organic solvents comprise Hansen Solubility parameters of H d in the range of 17.0 to 23.2 MPa 05 , H p in the range of 0.2 to 10.5 MPa 0 5 and H h in the range of 0.0 to 5.0 MPa 0 5 .
  • Particular useful organic solvents comprise a surface tension of in the range of 22 to 50 mN/m, especially in the range of 25 to 40 mN/m, and more preferably of in the range of 28 to 37 mN/m.
  • a mixture of solvents can be used having different surface tensions.
  • the mixture can comprise at least one solvent having a surface tension of at most 35 mN/m, especially of at most 30 mN/m and at least one solvent having a surface tension of at least 30, especially of at least 32 mN/m and the difference of the surface tension is at least 1 mN/m, more preferably at least 2 mN/m.
  • the surface tension can be measured using a FTA (First Ten Angstrom) 125 contact angle goniometer at 25°C. Details of the method are available from First Ten Angstrom as published by Roger P. Woodward, Ph.D.
  • the pendant drop method can be used to determine the surface tension.
  • the surface tension can be calculated using the Hansen Solubility Parameters by the formula expounded in Hansen Solubility Parameters: A User's Handbook, Second Edition, C. M. Hansen (2007), Taylor and Francis Group, LLC (HSPiP manual).
  • H d refers to Dispersion contribution
  • H h refers to Hydrogen bonding contribution
  • MVol refers to Molar Volume.
  • the Hansen Solubility Parameters can be determined according to the
  • Hansen Solubility Parameters in Practice (HSPiP) program (2 nd edition) as supplied by Hanson and Abbot et al. Suitable solvents, their Hansen Solubility Parameters, their surface tension and their boiling points are provided in Table 1 .
  • Table 1 Hansen Solubility Parameters of useful solvents
  • Hh refers to Hydrogen bonding contribution
  • the present formulation comprises at least one organic semiconducting compound (OSC).
  • OSC organic semiconducting compound
  • the OSC compounds can be selected from standard materials known to the skilled person and described in the literature.
  • the OSC may be a monomeric compound (also referred to as "small molecule", as compared to a polymer or macromolecule), a polymeric compound, or a mixture, dispersion or blend containing one or more compounds selected from either or both of monomeric and polymeric compounds.
  • the OSC is selected from monomeric compounds, where it is easier to achieve a significant variation in the degree of crystallinity.
  • the OSC is preferably a conjugated aromatic molecule, and contains preferably at least three aromatic rings, which can be fused or unfused. Unfused rings are connected e.g. via a linkage group, a single bond or a spiro-linkage.
  • Preferred monomeric OSC compounds contain one or more rings selected from the group consisting of 5-, 6- or 7-membered aromatic rings, and more preferably contain only 5- or 6-membered aromatic rings.
  • the material may be a monomer, oligomer or polymer, including mixtures, dispersions and blends.
  • Each of the aromatic rings optionally contains one or more hetero atoms selected from Se, Te, P, Si, B, As, N, O or S, preferably from N, O or S.
  • the aromatic rings may be optionally substituted with alkyl, alkoxy, polyalkoxy, thioalkyl, acyl, aryl or substituted aryl groups, halogen, particularly fluorine, cyano, nitro or an optionally substituted secondary or tertiary alkylamine or arylamine represented by -N(R x )(R y ), where R x and R y independently of each other denote H, optionally substituted alkyl, optionally substituted aryl, alkoxy or polyalkoxy groups.
  • R x and/or R y denote alkyl or aryl these may be optionally fluorinated.
  • Preferred OSC compounds include small molecules (i.e. monomeric compounds), polymers, oligomers and derivatives thereof, selected from condensed aromatic hydrocarbons such as tetracene, chrysene, pentacene, pyrene, perylene, coronene, or soluble substituted derivatives of the aforementioned; oligomeric para substituted phenylenes such as p- quaterphenyl (p-4P), p-quinquephenyl (p-5P), p-sexiphenyl (p-6P), or soluble substituted derivatives of the aforementioned; conjugated hydrocarbon polymers such as polyacene, polyphenylene, poly(phenylene vinylene), polyfluorene, polyindenofluorene, including oligomers of these conjugated hydrocarbon polymers; conjugated heterocyclic polymers such as poly(3-substituted thiophene), poly(3,4-bisubstituted thiophene),
  • Preferred compounds are those from the above list and derivatives thereof which are soluble.
  • OSC materials are substituted polyacenes, such as 6,13-bis(trialkylsilylethynyl)pentacene or derivatives thereof, such as 5,11- bis(trialkylsilylethynyl)anthradithiophenes, as described for example in US 6,690,029, WO 2005/055248 A1 , or WO 2008/107089 A1.
  • a further preferred OSC material is poly(3-substituted thiophene), very preferably poly(3-alkylthiophenes) (P3AT) wherein the alkyl group is preferably straight-chain and preferably has 1 to 12, most preferably 4 to 10 C-atoms, like e.g. poly(3-hexylthiophene).
  • Particularly preferred polymeric OSC compounds are polymers or copolymers comprising one or more repeating units selected from the group consisting of thiophene-2,5-diyl, 3-substituted thiophene-2,5-diyl, optionally substituted thieno[2,3-b]thiophene-2,5-diyl, optionally substituted thieno[3,2-b]thiophene-2,5-diyl, selenophene-2,5-diyl, 3-substituted selenophene-2,5-diyl, optionally substituted indenofluorene, optionally substituted phenanthrene and optionally substituted triarylamine.
  • the composition according to the present invention can comprise between 0.01 and 20% by weight, preferably between 0.1 and 15% by weight, more preferably between 0.2 and 10% by weight and most preferably between 0.25 and 5% by weight of OSC materials or the corresponding blend.
  • the percent data relate to 100% of the solvent or solvent mixture.
  • the composition may comprise one or more than one, preferably 1 , 2, 3 or more than three OSC compounds.
  • the organic semiconductor compound used here is either a pure component or a mixture of two or more components, at least one of which must have semiconducting properties. In the case of the use of mixtures, however, it is not necessary for each component to have semiconducting properties. Thus, for example, inert low-molecular-weight compounds can be used together with semiconducting polymers.
  • non-conducting polymers which serve as inert matrix or binder, together with one or more low-molecular-weight compounds or further polymers having semiconducting properties.
  • the potentially admixed non-conducting component is taken to mean an electro-optically inactive, inert, passive compound.
  • the molecular weight M w of the polymeric organic semiconductor is preferably greater than 10,000 g/mol, more preferably between 50,000 and 2,000,000 g/mol and most preferably between 100,000 and 1 ,000,000 g/mol.
  • polymeric organic semiconductors are taken to mean, in particular, (i) substituted poly-p-arylene- vinylenes (PAVs) as disclosed in EP 0443861 , WO 94/20589,
  • EP 0964045 which are soluble in organic solvents, (ii) substituted polyfluorenes (PFs) as disclosed in EP 0842208, WO 00/22027,
  • ICSM '98, Part I & II (in: Synth. Met 1999, 101/102) which are soluble in organic solvents, (xiii) substituted and unsubstituted polyvinylcarbazoles (PVKs), as disclosed, for example, in R. C. Penwell et al., J. Polym. Sci., Macromol Rev. 1978, 13, 63-160, (xiv) substituted and unsubstituted triarylamine polymers, as disclosed, for example, in JP 2000/072722, (xv) substituted and unsubstituted polysilylenes and polygermylenes, as disclosed, for example, in M. A. Abkowitz and M. Stolka, Synth. Met.
  • PVKs polyvinylcarbazoles
  • the organic semiconducting compound preferably has a molecular weight of
  • the OSC can be used for example as the active channel material in the semiconducting channel of an OFET, or as a layer element of an organic rectifying diode.
  • the OFET layer contains an OSC as the active channel material
  • it may be an n- or p- type OSC.
  • the semiconducting channel may also be a composite of two or more OSC compounds of the same type, i.e. either n- or p-type.
  • a p-type channel OSC compound may for example be mixed with an n-type OSC compound for the effect of doping the OSC layer.
  • Multilayer semiconductors may also be used.
  • the OSC may be intrinsic near the insulator interface and a highly doped region can additionally be coated next to the intrinsic layer.
  • Preferred OSC compounds have a FET mobility of greater than
  • n is an integer >1 , preferably from 10 to 1 ,000,
  • R on each occurrence identically or differently denotes H, F, CI, Br, I, CN, a straight-chain, branched or cyclic alkyl group having from 1 to 40 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR° CR° or C ⁇ C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups R s , and wherein one or more groups R may also form a mono- or polycyclic aliphatic or aromatic ring system with one another and/or with the ring to which they are attached,
  • R s on each occurrence identically or differently denotes F, CI, Br, I, CN, Sn(R 00 ) 3 , Si(R 00 ) 3 or B(R 00 ) 2 a straight-chain, branched or cyclic alkyl group having from 1 to 25 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR° CR°, C ⁇ C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or R s denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups R s , and wherein one or more groups R s may also form a ring system with one another and/or with R, R' on each occurrence identical
  • Especially preferred monomeric OSC compounds are selected from the group consisting of substituted oligoacenes such as pentacene, tetracene or anthracene, or heterocyclic derivatives thereof, like
  • Particularly preferred monomeric OSC compounds are selected from formula M1 (polyacenes):
  • each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , R 8 , R 9 , R 10 , R 1 and R 12 which may be the same or different, independently represents: hydrogen; an optionally substituted C-i-C-40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C 6 -C 4 o aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group
  • R 1 , R 2 , R 3 , R 4 ,R 7 , R 8 , R 9 , R 10 , R 15 , R 16 , R 17 each independently are the same or different and each independently represents: H; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C 6 -C 4 o aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C 2 -C 40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group
  • compounds of subformula M1b1 silethynylated heteroacenes
  • R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy that have 1 to 20, preferably 1 to 8 C-atoms and are optionally fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, preferably C 6 F 5 , or C0 2 R"", with R"" being H, optionally fluorinated alkyl having 1 to 20 C-atoms or optionally fluorinated aryl having 2 to 30, preferably 5 to 20 C-atoms,
  • R" is, in case of multiple occurrence independently of one another, cyclic, straight-chain or branched alkyl or alkoxy that have 1 to 20, preferably 1 to 8 C-atoms, or aryl having 2 to 30 C-atoms, all of which are optionally fluorinated or perfluorinated, with SiR n 3 preferably being trialkylsilyl,
  • R'" is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-atoms, preferably H, m is O or l , o is 0 or 1.
  • the compound of subformula M1 b1 is provided and used as a mixture of the anti- and syn-isomers of the following formulae
  • X, R, R', R" m and o have independently of each other one of the meanings given in formula M1b1 or one of the preferred meanings given above and below, X is preferably S, and m and o are preferably 0.
  • carbyl group denotes any mono- valent or multivalent organic radical moiety which comprises at least one carbon atom either without any non-carbon atoms (like for example -C ⁇ C-), or optionally combined with at least one non-carbon atom such as N, O, S, P, Si, Se, As, Te or Ge (for example carbonyl etc.).
  • hydrocarbyl group denotes a carbyl group that does additionally contain one or more H atoms and optionally contains one or more hetero atoms like for example N, O, S, P, Si, Se, As, Te or Ge.
  • a carbyl or hydrocarbyl group comprising a chain of 3 or more C atoms may also be straight-chain, branched and/or cyclic, including spiro and/or fused rings.
  • Preferred carbyl and hydrocarbyl groups include alkyl, alkoxy,
  • alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and alkoxycarbonyloxy each of which is optionally substituted and has 1 to 40, preferably 1 to 25, very preferably 1 to 18 C atoms, furthermore optionally substituted aryl or aryloxy having 6 to 40, preferably 6 to 25 C atoms, furthermore
  • alkylaryloxy arylcarbonyl, aryloxycarbonyl, arylcarbonyloxy and
  • aryloxycarbonyloxy each of which is optionally substituted and has 6 to 40, preferably 7 to 40 C atoms, wherein all these groups optionally contain one or more hetero atoms, especially selected from N, O, S, P, Si, Se, As, Te and Ge.
  • the carbyl or hydrocarbyl group may be a saturated or unsaturated acyclic group, or a saturated or unsaturated cyclic group. Unsaturated acyclic or cyclic groups are preferred, especially aryl, alkenyl and alkynyl groups (especially ethynyl). Where the C1-C40 carbyl or hydrocarbyl group is acyclic, the group may be straight-chain or branched.
  • the C1-C40 carbyl or hydrocarbyl group includes for example: a C1-C40 alkyl group, a C 2 -C 4 o alkenyl group, a C 2 -C 4 o alkynyl group, a C 3 -C 40 allyl group, a C4-C40 alkyldienyl group, a C4-C40 polyenyl group, a C 6 -Ci 8 aryl group, a C 6 -C o alkylaryl group, a C 6 -C 4 o arylalkyl group, a C4-C40 cycloalkyl group, a C 4 - C 40 cycloalkenyl group, and the like.
  • Preferred among the foregoing groups are a C1-C20 alkyl group, a C 2 -C 2 o alkenyl group, a C 2 -C 20 alkynyl group, a C 3 -C 2 o allyl group, a C 4 -C 20 alkyldienyl group, a C 6 -Ci 2 aryl group and a C4-C20 polyenyl group, respectively.
  • groups having carbon atoms and groups having hetero atoms like e.g. an alkynyl group, preferably ethynyl, that is substituted with a silyl group, preferably a trialkylsilyl group.
  • Aryl and heteroaryl preferably denote a mono-, bi- or tricyclic aromatic or heteroaromatic group with up to 25 C atoms that may also comprise condensed rings and is optionally substituted with one or more groups L, wherein L is halogen or an alkyl, alkoxy, alkylcarbonyl or alkoxycarbonyl group with 1 to 12 C atoms, wherein one or more H atoms may be replaced by F or CI.
  • aryl and heteroaryl groups are phenyl in which, in addition, one or more CH groups may be replaced by N, naphthalene, thiophene, selenophene, thienothiophene, dithienothiophene, fluorene and oxazole, all of which can be unsubstituted, mono- or polysubstituted with L as defined above.
  • R 15"17 and R" are preferably identical or different groups selected from a Ci-C 4 o-alkyl group, preferably Ci-C4-alkyl, most preferably methyl, ethyl, n- propyl or isopropyl, a C6-C 4 o-aryl group, preferably phenyl, a C 6 -C o- arylalkyl group, a Ci-C 4 o-alkoxy group, or a C6-C 40 -arylalkyloxy group, wherein all these groups are optionally substituted for example with one or more halogen atoms.
  • R 15"17 and R" are each independently selected from optionally substituted
  • d-3-alkyl for example isopropyl, and optionally substituted C6-io-aryl, preferably phenyl.
  • a silyl group of formula - SiR 15 R 16 wherein R 15 is as defined above and R 16 forms a cyclic silyl alkyl group together with the Si atom, preferably having 1 to 8 C atoms.
  • R 15"17 are identical groups, for example identical, optionally substituted, alkyl groups, as in
  • R 15"17 are identical, optionally substituted Ci-io, more preferably C 1-4 , most preferably Ci -3 alkyl groups.
  • a preferred alkyl group in this case is isopropyl.
  • Preferred groups -SiR 15 R 16 R 17 and SiR" 3 include, without limitation, trimethylsilyl, triethylsilyl, tripropylsilyl, dimethylethylsilyl, diethylmethylsilyl, dimethylpropylsilyl, dimethylisopropylsilyl, dipropylmethylsilyl,
  • diethylisopropylsilyl triisopropylsilyl, trimethoxysilyl, triethoxysilyl, triphenylsilyl, diphenylisopropylsilyl, diisopropylphenylsilyl,
  • the OSC material is an organic light emitting material and/or charge transporting material.
  • the organic light emitting materials and charge transporting materials can be selected from standard materials known to the skilled person and described in the literature.
  • Organic light emitting material according to the present application means a material which emits light having a A max in the range from 400 to 700 nm.
  • Suitable phosphorescent compounds are, in particular, compounds which emit light, preferably in the visible region, on suitable excitation and in addition contain at least one atom having an atomic number greater than 20, preferably greater than 38 and less than 84, more preferably greater than 56 and less than 80.
  • the phosphorescence emitters used are preferably compounds which contain copper, molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium, iridium, palladium, platinum, silver, gold or europium, in particular compounds which contain iridium or platinum.
  • Particularly preferred organic phosphorescent compounds are compounds of formulae (1) to (4):
  • DCy is, identically or differently on each occurrence, a cyclic group which contains at least one donor atom, preferably nitrogen, carbon in the form of a carbene or phosphorus, via which the cyclic group is bonded to the metal, and which may in turn carry one or more substituents R 18 ; the groups DCy and CCy are connected to one another via a covalent bond;
  • ring systems between a plurality of radicals R 18 means that a bridge may also be present between two or three ligands CCy-DCy or between one or two ligands CCy-DCy and the ligand A, giving a polydentate or polypodal ligand system.
  • Examples of the emitters described above are revealed by the applications WO 00/70655, WO 01/41512, WO 02/02714, WO 02/15645, EP 1191613, EP 1191612, EP 1191614, WO 04/081017, WO 05/033244,
  • Preferred dopants are selected from the class of the monostyrylamines, the distyrylamines, the tristyrylamines, the tetrastyrylamines, the styryl- phosphines, the styryl ethers and the arylamines.
  • a monostyrylamine is taken to mean a compound which contains one substituted or unsubstituted styryl group and at least one, preferably aromatic, amine.
  • a distyryl- amine is taken to mean a compound which contains two substituted or unsubstituted styryl groups and at least one, preferably aromatic, amine.
  • a tristyrylamine is taken to mean a compound which contains three substi- tuted or unsubstituted styryl groups and at least one, preferably aromatic, amine.
  • a tetrastyrylamine is taken to mean a compound which contains four substituted or unsubstituted styryl groups and at least one, preferably aromatic, amine.
  • the styryl groups are particularly preferably stilbenes, which may also be further substituted.
  • Corresponding phosphines and ethers are defined analogously to the amines.
  • an arylamine or an aromatic amine is taken to mean a compound which contains three substituted or unsubstituted aromatic or heteroaromatic ring systems bonded directly to the nitrogen. At least one of these aromatic or heteroaromatic ring systems is preferably a con- densed ring system, particularly preferably having at least 14 aromatic ring atoms. Preferred examples thereof are aromatic anthraceneamines, aromatic anthracenediamines, aromatic pyreneamines, aromatic pyrene- diamines, aromatic chryseneamines or aromatic chrysenediamines.
  • An aromatic anthraceneamine is taken to mean a compound in which one di- arylamino group is bonded directly to an anthracene group, preferably in the 9-position.
  • An aromatic anthracenediamine is taken to mean a com- pound in which two diarylamino groups are bonded directly to an anthracene group, preferably in the 9,10-position.
  • Aromatic pyreneamines, pyrenediamines, chryseneamines and chrysenediamines are defined analogously thereto, where the diarylamino groups are preferably bonded to the pyrene in the 1-position or in the 1 ,6-position.
  • dopants are selected from indenofluoreneamines or indenofluorene- diamines, for example in accordance with WO 06/122630, benzoindeno- fluoreneamines or benzoindenofluorenediamines, for example in accordance with WO 08/006449, and dibenzoindenofluoreneamines or dibenzo- indenofluorenediamines, for example in accordance with WO 07/140847.
  • Examples of dopants from the class of the styrylamines are substituted or unsubstituted tristilbeneamines or the dopants described in
  • Suitable dopants are furthermore the structures depicted in the following table, and the derivatives of these structures disclosed in JP 06/001973, WO 04/047499, WO 06/098080, WO 07/065678, US 2005/0260442 and WO 04/092111.
  • the proportion of the dopant in the mixture of the emitting layer is between 0.1 and 50.0 % by vol., preferably between 0.5 and 20.0 % by vol., particularly preferably between 1.0 and 10.0 % by vol.
  • the proportion of the host material is between 50.0 and 99.9 % by vol., preferably between 80.0 and 99.5 % by vol., particularly preferably between 90.0 and 99.0 % by vol.
  • Suitable host materials for this purpose are materials from various classes of substance.
  • Preferred host materials are selected from the classes of the oligoarylenes (for example 2,2',7,7'-tetraphenylspirobifluorene in accordance with EP 676461 or dinaphthylanthracene), in particular the oligoarylenes containing condensed aromatic groups, the oligoarylene- vinylenes (for example DPVBi or spiro-DPVBi in accordance with
  • EP 676461 the polypodal metal complexes (for example in accordance with WO 04/081017), the hole-conducting compounds (for example in accordance with WO 04/058911), the electron-conducting compounds, in particular ketones, phosphine oxides, sulfoxides, etc. (for example in accordance with WO 05/084081 and WO 05/084082), the atropisomers (for example in accordance with WO 06/048268), the boronic acid derivatives (for example in accordance with WO 06/117052) or the benzanthracenes (for example in accordance with WO 08/145239).
  • Suitable host materials are furthermore also the benzo[c]phenanthrene compounds according to the invention which are described above.
  • particularly preferred host materials are selected from the classes of the oligoarylenes containing naphthalene, anthracene, benzanthracene and/or pyrene or atropisomers of these compounds, the oligoarylenevinylenes, the ketones, the phosphine oxides and the sulfoxides.
  • very particularly preferred host materials are selected from the classes of the oligoarylenes containing anthracene, benzanthracene and/or pyrene or atropisomers of these compounds.
  • an oligoarylene is intended to be taken to mean a compound in which at least three aryl or arylene groups are bonded to one another.
  • Suitable host materials are furthermore, for example, the materials depicted in the following table, and derivatives of these materials, as disclosed in WO 04/018587, WO 08/006449, US 5935721 ,
  • a hole-injection layer is a layer which is directly adjacent to the anode.
  • a hole- transport layer is a layer which is located between a hole-injection layer and an emission layer. It may be preferred for them to be doped with electron-acceptor compounds, for example with F 4 -TCNQ or with compounds as described in EP 1476881 or EP 1596445.
  • suitable charge- transport materials are, for example, the compounds disclosed in Y. Shirota et al., Chem. Rev. 2007, 107(4), 953- 1010, or other materials as employed in these layers in accordance with the prior art.
  • Examples of preferred hole-transport materials which can be used in a hole-transport or hole-injection layer of the electroluminescent device according to the invention are indenofluoreneamines and derivatives (for example in accordance with WO 06/122630 or WO 06/100896), the amine derivatives as disclosed in EP 1661888, hexaazatriphenylene derivatives (for example in accordance with WO 01/049806), amine derivatives with condensed aromatics (for example in accordance with US 5,061 ,569), the amine derivatives as disclosed in WO 95/09147,
  • Suitable hole-transport and hole- injection materials are furthermore derivatives of the compounds depicted above, as disclosed in JP 2001/226331 , EP 676461 , EP 650955,
  • Suitable hole-transport or hole-injection materials are furthermore, for example, the materials indicated in the following table.
  • Suitable electron-transport or electron-injection materials which can be used in the electroluminescent device according to the invention are, for example, the materials indicated in the following table. Suitable electron- transport and electron-injection materials are furthermore derivatives of the compounds depicted above, as disclosed in JP 2000/053957,
  • Suitable matrix materials for the compounds according to the invention are ketones, phosphine oxides, sulfoxides and sulfones, for example in accordance with WO 04/013080, WO 04/093207, WO 06/005627 or
  • bipolar matrix materials for example in accordance with
  • the organic semiconducting compounds (OSC) preferably have a molecular weight of at most 5000 g/mol, particularly at most 2000 g/mol, especially at most 1500 g/mol and more preferably at most 1000 g/mol.
  • formulation can comprise 0.1 to 10 % by weight, preferably 0.25 to 5 % more preferably 0.5 to 4 % by weight emitting materials and/or charge transporting materials.
  • the formulation may comprise 0.1 to 10 % more preferably 0.25% to 5% most preferably 0.3% to 3% by weight inert polymeric binders.
  • the OSC formulation comprises one or more organic binders, preferably polymeric binders to adjust the rheological properties, as described for example in WO 2005/055248 A1 , in particular an organic binder which has a low permittivity ( ⁇ ) at 1 ,000 Hz of 3.3 or less, very preferably in a proportion of binder to OSC compounds from 20:1 to 1 :20, preferably 10:1 to 1 :10, especially 5:1 to 1 :5, more preferably 1 :1 to 1 :5 by weight.
  • the polymeric binder comprises a weight average molecular weight in the range of 1000 to 15,000,000 g/mol, especially 1500 to 12,000,000 g/mol, and most especially 1500 to 10,000,000 g/mol.
  • the polymers can preferably have a weight average molecular weigh of at least 1 ,000,000 g/mol and more preferably at least 2,000,000 g/mol.
  • the polymers being useful as inert binders can preferably have a weight average molecular weight of at most 20,000,000 g/mol, more preferably of at most 12,000,000 g/mol and most preferably at most 7,000,000 g/mol.
  • the polymer can have a polydispersity index Mw/M n in the range of 1.0 to 10.0, more preferably in the range of 1.01 to 5.0 and most preferably in the range of 1.02 to 3.
  • Astonishing improvements can be achieved with perferbable polymers having a polydispersity index Mw/M n in the range of 1.03 to 2.0, especially 1.04 to 1.5 and more preferably 1.05 to 1.2.
  • the polymeric binder may have a multi modal molecular weight distribution.
  • the polymer may have 2, 3, 4 or more maxima in the molecular weight distribution as determinable using GPC.
  • the binder is selected for example from polystyrene, poly(a- methylstyrene), polyvinylcinnamate, poly(4-vinylbiphenyl) or poly(4- methylstyrene).
  • Polymeric binders preferably comprise repeating units derived from styrene and/or olefins.
  • Preferred polymeric binders can comprise at least 80 %, especially 90 % and more preferably 99 % by weight of repeating units derived from styrene monomers and/or olefins.
  • the binder may also be a semiconducting binder selected for example from poly-arylamines, polyfluorenes, polythiophenes, polyspirobifluorenes, substituted polyvinylenephenylenes, polycarbazoles or polystilbenes, or copolymers thereof.
  • an inert binder is a polymer having a glass transition temperature in the range of -70 to 160°C, more preferably, 0 to 150°C, especially 50 to 140°C and most preferably 70 to 130°C.
  • the glass transition temperature can be determined by measuring the DSC of the polymer (DIN EN ISO 11357, heating rate 10°C per minute).
  • the polymeric binder is dispersible or soluble in the solvent of the present formulation as described above and below.
  • the polymeric binder is soluble in the organic solvent and the solubility of the polymeric binder in the solvent is at least 1 g/l, especially at least 5 g/l and more preferably at least 10 g/l.
  • the solubility of the polymeric binder in the solvent is at least 1 g/l, especially at least 5 g/l and more preferably at least 10 g/l.
  • formulation can comprise 0.05 to 10 % by weight, preferably 0.1 to 5 % more preferably 0.15 to 3 % by weight polymeric binder. Astonishing improvements can be achieved by using formulations preferably
  • Astonishing improvements can be achieved by using a high molecular weight binder at a low content in the formulation. Using such approach surprisingly efficient devices having an excellent printing quality are obtainable.
  • the weight ratio of the semiconducting compound to the inert binder is preferably in the range of 30:1 to 1 :30, particularly in the range of 20:1 to 1 :5 and more preferably in the range of 5:1 to 1 :1.
  • the polymeric binders preferably comprise repeating units derived from styrene and/or olefins.
  • Preferred polymeric binders can comprise at least 80 %, especially 90 % and more preferably 99 % by weight of repeating units derived from styrene monomers and/or olefins.
  • Styrene monomers are well known in the art. These monomers include styrene, substituted styrenes with an alkyl substituent in the side chain, such as a-methylstyrene and a-ethylstyrene, substituted styrenes with an alkyl substituent on the ring such as vinyltoluene and p-methylstyrene, halogenated styrenes such as monochlorostyrenes, dichlorostyrenes, tribromostyrenes and tetrabromostyrenes. Olefins are monomers consisting of hydrogen and carbon atoms. These monomers include ethylene, propylene, butylenes, isoprene and 1 ,3- butadiene.
  • the polymeric binder is polystyrene having a weight average molecular weight of preferably at least 100,000 g/mol, especially at least 200,000. especially at least 300,000 g/mol and more preferably at least 500,000 g/mol.
  • the polystyrene can preferably have a weight average molecular weigh of at least 1 ,000,000 g/mol and more preferably at least 2,000,000 g/mol.
  • the polystyrene being useful as inert binders can preferably have a weight average molecular weight of at most 20,000,000 g/mol, more preferably of at most 12,000,000 g/mol and most preferably at most 7,000,000 g/mol.
  • the formulation according to the present invention may additionally comprise one or more further components like for example surface-active compounds, lubricating agents, conductive additives, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents which may be reactive or non-reactive, auxiliaries, colourants, dyes or pigments, sensitizers, stabilizers, nanoparticles or inhibitors.
  • volatile wetting agents The term "volatile” as used above and below means that the agent can be removed from the organic semiconducting materials by evaporation, after these materials have been deposited onto a substrate of an OE device, under conditions (like temperature and/or reduced pressure) that do not significantly damage these materials or the OE device.
  • the wetting agent has a boiling point or sublimation
  • the wetting agents are not capable of chemically reacting with the OSC compounds.
  • they are selected from compounds that do not have a permanent doping effect on the OSC material (e.g. by oxidising or otherwise chemically reacting with the OSC material). Therefore, the formulation preferably should not contain additives, like e.g. oxidants or protonic or lewis acids, which react with the OSC materials by forming ionic products.
  • the difference of the boiling point of the wetting agent and the organic solvent is in the range of -50°C to 50°C, more preferably in the range of -30°C to 30°C and most preferably in the range of -20°C to 20°C.
  • Preferred wetting agents are non-aromatic compounds. With further preference the wetting agents are non-ionic compounds. Particular useful wetting agents comprise a surface tension of at most 35 mN/m, especially of at most 30 mN/m, and more preferably of at most 25 mN/m. The surface tension can be measured using a FTA (First Ten Angstrom) 125 contact angle goniometer at 25°C. Details of the method are available from First Ten Angstrom as published by Roger P. Woodward, Ph.D. "Surface Tension Measurements Using the Drop Shape Method". Preferably, the pendant drop method can be used to determine the surface tension.
  • FTA First Ten Angstrom
  • the pendant drop method can be used to determine the surface tension.
  • the difference of the surface tension of the organic solvent and the wetting agent is preferably at least 1 mN/m, especially at least 5 mN/m and more preferably at least 10 mN/m.
  • wetting agents comprising a molecular weight of at least 100 g/mol, especially at least 150 g/mol, preferably at least 180 g/mol and more preferably at least 200 g/mol.
  • Suitable and preferred wetting agents that do not oxidise or otherwise chemically react with the OSC materials are selected from the group consisting of siloxanes, alkanes, amines, alkenes, alkynes, alcohols and/or halogenated derivates of these compounds. Furthermore, fluoro ethers, fluoro esters and/or fluoro ketones can be used.
  • these compounds are selected from methyl siloxanes having 6 to 20 carbon atoms, especially 8 to 16 carbon atoms; C7 -C14 alkanes, C7 -C14 alkenes, C7 -C14 alkynes, alcohols having 7 to 14 carbon atoms, fluoro ethers having 7 to 14 carbon atoms, fluoro esters having 7 to 14 carbon atoms and fluoro ketones having 7 to 14 carbon atoms.
  • Most preferred wetting agents are methyl siloxanes having 8 to 14 carbon atoms.
  • Useful and preferred alkanes having 7 to 14 carbon atoms include heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, 3-methyl heptane, 4-ethyl heptane, 5-propyl decane, trimethyl cyclohexane and decalin.
  • Halogenated alkanes having 7 to 14 carbon atoms include 1-chloro heptane, 1 ,2-dichloro octane, tetrafluoro octane, decafluoro dodecane, perfluoro nonane, 1 ,1 ,1-trifluoromethyl decane, and perfluoro methyl decalin.
  • Useful and preferred alkenes having 7 to 14 carbon atoms include heptene, octene, nonene, 1-decene, 4-decene, undecene, dodecene, tridecene, tetradecene, 3-methyl heptene, 4-ethyl heptene, 5-propyl decene, and trimethyl cyclohexene.
  • Halogenated alkenes having 7 to 14 carbon atoms include 1 ,2-dichloro octene, tetrafluoro octene, decafluoro dodecene, perfluoro nonene, and 1 ,1 ,1-trifluoromethyl decene.
  • Useful and preferred alkynes having 7 to 14 carbon atoms include octyne, nonyne, 1-decyne, 4-decyne, dodecyne, tetradecyne, 3-methyl heptyne, 4- ethyl heptyne, 5-propyl decyne, and trimethyl cyclohexyne.
  • Halogenated alkynes having 7 to 14 carbon atoms include 1 ,2-dichloro octyne, tetrafluoro octyne, decafluoro dodecyne, perfluoro nonyne, and 1 ,1 ,1-trifluoromethyl decyne.
  • Useful and preferred alcanols having 7 to 14 carbon atoms include, heptanol, octanol, nonanol, decanol, undecanol, dodecanol, tridecanol, tetradecanol, 3-methyl heptanol, 3,5-dimethyl-1-hexyn-3-ol, 4-ethyl heptanol, 5-propyl decanol, trimethyl cyclohexanol and hydroxyl decalin.
  • Halogenated alkanols having 7 to 14 carbon atoms include 1-chloro heptanol, 1 ,2-dichloro octanol, tetrafluoro octanol, decafluoro dodecanol, perfluoro nonanol, 1 ,1 ,1-trifluoromethyl decanol, and 2-trifluoro methyl-1- hydroxy decalin.
  • Useful and preferred fluoro ethers having 7 to 14 carbon atoms include 3- ethoxy-1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexane, 3- propoxy-1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexane, and 3-propoxy-1 ,1 ,1 ,2,3,4,4,5,5,5 decafluoro-2-trifluoromethyl-pentane.
  • Useful and preferred fluoro esters having 7 to 14 carbon atoms include 3-(1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexyl) ethanoate, and 3-(1 , 1 ,1 ,2,3,4,4,5,5,5 decafluoro-2-trifluoromethyl-pentyl) propanoate.
  • Useful and preferred fluoro ketones having 7 to 14 carbon atoms include 3-(1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexyl) ethyl ketone, and 3-(1 ,1 ,1 , 2,3,4,4, 5,5,5 decafluoro-2-trifluoromethyl-pentyl) propyl ketone.
  • Useful and preferred siloxanes include hexamethyl disiloxane, octamethyl trisiloxane, decamethyl tetrasiloxane, dodecamethyl pentasiloxane, and tetradecamethyl hexasiloxane.
  • the formulation may comprise at most 5 % by weight, especially at most 3 % by weight of wetting additives. More preferably, the formulation comprises 0.01 to 4 % by weight, especially preferably 0.1 to 1 % by weight of wetting agent.
  • the formulation according to the present invention can be designed as an emulsion, dispersion or solution.
  • the present formulation is a solution (homogeneous mixture) comprising no considerable amounts of a second phase.
  • the formulation according to the present invention can be used for the preparation of organic electronic (OE) devices, for example transistors like OFETs or organic photovoltaic (OPV) devices like diodes or solar cells, or organic light emitting diodes (OLED),.
  • OE organic electronic
  • OLED organic photovoltaic
  • Especially preferred OE devices are OFETs.
  • a preferred OFET according to the present invention comprises the following components:
  • protection or passivation layers (6) optionally one or more protection or passivation layers (6).
  • FIG. 1A exemplarily and schematically depicts a typical bottom gate (BG), top contact (TC) OFET device according to the present invention, comprising a substrate (1), a gate electrode (2), a layer of dielectric material (3) (also known as gate insulator layer), an OSC layer (4), and source and drain (S/D) electrodes (5), and an optional passivation or protection layer (6).
  • BG bottom gate
  • TC top contact
  • FIG. 1A exemplarily and schematically depicts a typical bottom gate (BG), top contact (TC) OFET device according to the present invention, comprising a substrate (1), a gate electrode (2), a layer of dielectric material (3) (also known as gate insulator layer), an OSC layer (4), and source and drain (S/D) electrodes (5), and an optional passivation or protection layer (6).
  • BG bottom gate
  • TC top contact
  • S/D source and drain
  • the device of Figure 1A can be prepared by a process comprising the steps of depositing a gate electrode (2) on a substrate (1), depositing a dielectric layer (3) on top of the gate electrode (2) and the substrate (1), depositing an OSC layer (4) on top of the dielectric layer (3), depositing S/D electrodes (5) on top of the OSC layer (4), and optionally depositing a passivation or protection layer (6) on top of the S/D electrodes (5) and the OSC layer (4).
  • Figure 1 B exemplarily and schematically depicts a typical bottom gate (BG), bottom contact (BC) OFET device according to the present invention, comprising a substrate (1), a gate electrode (2), a dielectric layer (3), S/D electrodes (5), an OSC layer (4), and an optional passivation or protection layer (6).
  • BG bottom gate
  • BC bottom contact
  • the device of Figure 1 B can be prepared by a process comprising the steps of depositing a gate electrode (2) on a substrate (1), depositing a dielectric layer (3) on top of the gate electrode (2) and the substrate (1), depositing S/D electrodes (5) on top of the dielectric layer (3), depositing an OSC layer (4) on top of the S/D electrodes (4) and the dielectric layer (3), and optionally depositing a passivation or protection layer (6) on top of the OSC layer (4).
  • FIG. 2 exemplarily and schematically depicts a top gate (TG) OFET device according to the present invention, comprising a substrate (1), source and drain electrodes (5), an OSC layer (4), a dielectric layer (3), and a gate electrode (2), and an optional passivation or protection layer (6).
  • TG top gate
  • the device of Figure 2 can be prepared by a process comprising the steps of depositing S/D electrodes (5) on a substrate (1), depositing an OSC layer (4) on top of the S/D electrodes (4) and the substrate (1), depositing a dielectric layer (3) on top of the OSC layer (4), depositing a gate electrode (2) on top of the dielectric layer (3), and optionally depositing a passivation or protection layer (6) on top of the gate electrode (2) and the dielectric layer (3).
  • the passivation or protection layer (6) in the devices described in Figures 1A, 1 B and 2 has the purpose of protecting the OSC layer and the S/D or gate electrodes from further layers or devices that may be later provided thereon, and/or from environmental influence.
  • the distance between the source and drain electrodes (5), as indicated by the double arrow in Figures 1A, 1 B and 2 is the channel area.
  • the formulation preferably comprises or contains, more preferably consists essentially of, very preferably exclusively of, a p-type semiconductor and a n-type
  • a preferred material of this type is a blend or mixture of poly(3-substituted thiophene) or P3AT with a Ceo or C 7 o fullerene or modified C6o molecule like PCBM [(6,6)- phenyl C61-butyric acid methyl ester], as disclosed for example in
  • WO 94/05045 A1 wherein preferably the ratio of P3AT to fullerene is from 2:1 to 1 :2 by weight, more preferably from 1.2:1 to 1 :1.2 by weight.
  • Figure 3 and Figure 4 exemplarily and schematically depict typical and preferred OPV devices according to the present invention [see also Waldauf et al., Appl. Phys. Lett. 89, 233517 (2006)].
  • An OPV device as shown in Figure 3 preferably comprises:
  • a low work function electrode (31) for example a metal, such as
  • a high work function electrode (32) for example ITO, one of which is transparent,
  • a layer (33) (also referred to as "active layer") comprising a hole
  • the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p and n type semiconductor,
  • an optional conducting polymer layer for example comprising a blend of PEDOTPSS (poly(3,4-ethylenedioxythiophene):
  • poly(styrenesulfonate) situated between the active layer (33) and the high work function electrode (32), to modify the work function of the high work function electrode to provide an ohmic contact for holes
  • an optional coating (35) for example of LiF
  • an optional coating (35) on the side of the low workfunction electrode (31) facing the active layer (33), to provide an ohmic contact for electrons.
  • An inverted OPV device as shown in Figure 4 preferably comprises:
  • a low work function electrode (41) for example a metal, such as gold
  • a high work function electrode (42) for example ITO
  • a layer (43) (also referred to as "active layer") comprising a hole
  • the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p and n type semiconductor,
  • an optional conducting polymer layer (44) for example comprising a blend of PEDOTPSS, situated between the active layer (43) and the low work function electrode (41) to provide an ohmic contact for electrons
  • an optional coating (45) for example of TiO x
  • the OPV devices of the present invent invention typically comprise a p- type (electron donor) semiconductor and an n-type (electron acceptor) semiconductor.
  • the p-type semiconductor is for example a polymer like poly(3-alkyl-thiophene) (P3AT), preferably poly(3-hexylthiophene) (P3HT), or alternatively another selected from the groups of preferred polymeric and monomeric OSC material as listed above.
  • the n-type semiconductor can be an inorganic material such as zinc oxide or cadmium selenide, or an organic material such as a fullerene derivate, for example (6,6)-phenyl- butyric acid methyl ester derivatized methano C 6 o fullerene, also known as "PCBM” or "CeoPCBM”, as disclosed for example in G. Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having the structure shown below, or an structural analogous compound with e.g. a C 7 o fullerene group (C 70 PCBM), or a polymer (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).
  • PCBM (6,6)-phenyl- butyric acid methyl ester derivatized methano C 6 o fullerene
  • a preferred material of this type is a blend or mixture of a polymer like P3HT or another polymer selected from the groups listed above, with a Ceo or C 0 fullerene or modified fullerene like PCBM.
  • the ratio polymenfullerene is from 2:1 to 1 :2 by weight, more preferably from 1.2:1 to 1 :1.2 by weight, most preferably 1 :1 by weight.
  • an optional annealing step may be necessary to optimize blend
  • the OSC layer is deposited onto a substrate, followed by removal of the solvent together with any volatile additive(s) present, to form a film or layer.
  • Various substrates may be used for the fabrication of OE devices, for example glass, ITO coated glass, ITO glass with pre coated layers including PEDOT, PANI etc, or plastics, plastics materials being preferred, examples including alkyd resins, allyl esters, benzocyclobutenes, butadiene-styrene, cellulose, cellulose acetate, epoxide, epoxy polymers, ethylene-chlorothfluoro ethylene, ethylene-tetra-fluoroethylene, fibre glass enhanced plastic, fluorocarbon polymers, hexafluoropropylenevinylidene- fluoride copolymer, high density polyethylene, parylene, polyamide, polyimide, polyaramid, polydimethylsiloxane,
  • Preferred substrate materials are polyethyleneterephthalate, polyimide, and polyethylenenaphthalate.
  • the substrate may be any plastic material, metal or glass coated with the above materials.
  • the substrate should preferably be homogeneous to ensure good pattern definition.
  • the substrate may also be uniformly pre-aligned by extruding, stretching, rubbing or by photochemical techniques to induce the orientation of the organic semiconductor in order to enhance carrier mobility.
  • the electrodes can be deposited by liquid coating, such as spray-, dip-, web- or spin-coating, or by vacuum deposition or vapor deposition methods.
  • Suitable electrode materials and deposition methods are known to the person skilled in the art. Suitable electrode materials include, without limitation, inorganic or organic materials, or composites of the two.
  • suitable conductor or electrode materials include polyaniline, polypyrrole, PEDOT or doped conjugated polymers, further dispersions or pastes of graphite or particles of metal such as Au, Ag, Cu, Al, Ni or their mixtures as well as sputter coated or evaporated metals such as Cu, Cr, Pt/Pd or metal oxides such as indium tin oxide (ITO).
  • Organometallic precursors may also be used deposited from a liquid phase.
  • the substrate on surface on which the formulation according to the present invention is applied comprises a surface energy in the range of 130 to 25 mN m "1 more preferably in the range of 115 to 30 mN m "1 determined by measuring the contact angle of at least 2 solvents, e.g. water and methylene iodide, but other solvents can be used. These are typically measured using a contact angle goniometer such as a FTA 1000, at a temperatrure of 20- 25°C (room temp and at normal atmospheric pressure.the contact angle of the 2 solvents are then combined using a variety of mathematical models, typically Owens-Wendt geometric mean or Wu's harmonic mean. Perferably, the Owens-Wendt method is used. Owens-Wendt formula
  • Deposition of the OSC layer can be achieved by standard methods that are known to the skilled person and are described in the literature. Suitable and preferred deposition methods include liquid coating and printing techniques. Very preferred deposition methods include, without limitation, dip coating, spin coating, spray coating, aerosol jetting, ink jet printing, nozzle printing, gravure printing, doctor blade coating, roller printing, reverse-roller printing, flexographic printing, web printing, spray coating, dip coating, curtain coating, kiss coating, meyer bar coating, 2 roll nip fed coating, anilox coaters, knife coating or slot dye coating.
  • the OSC layer is applied with gravure printing, doctor blade coating, roller printing, reverse-roller printing, flexographic printing, web printing, anilox coaters.
  • Gravure and flexographic printing and varients of these printing methods are preferred. These include but or not limited to, micro gravure, reverse gravure, offset gravure, reverse roll etc. Both web fed(roll to roll) and sheetfed in both flatbed and the more conventional 'on the round' configurations can be used.
  • the anilox can be either chromed steel or ceramic, preferably ceramic.
  • the cell etch can vary between 2 cm 3 /m 2 to 120 cm 3 /m 2 but most preferably between 3 cm 3 /m 2 to 20 cm 3 /m 2 and most preferably between 4 cm 3 /m 2 to 18 cm 3 /m 2 , however the dried film thickness will vary on the concentration of the active material and the transfer characteristics of said formulation.
  • the cell configuration ie shape, depth, cell wall linking can be adapted by a person skilled in the art to achieve an optimal printing result.
  • the chromed steel is perferably used but this does not exclude other materials.
  • the engraving requirements are approximately 50% of those for the flexographic printing because there is one less transfer process involved.
  • the speed can vary significantly depending on the press type and configuration, for flatbed printing the print speed is typically very slow, typically 100 mm/minute or less. On roll to roll presses the speed can exceed 500 m/min.
  • an insulator layer can be deposited on a substrate in order to achieve a special type of an OE according to the present invention.
  • the insulator layer is deposited by solution processing, very preferably using a solution of a dielectric material, which is optionally cross-linkable, in one or more organic solvents.
  • a dielectric material which is optionally cross-linkable, in one or more organic solvents.
  • the solvent used for depositing the dielectric material is orthogonal to the solvent used for depositing the OSC material, and vice versa.
  • the OSC or dielectric material is spun for example between 1000 and 2000 rpm for a period of for example 30 seconds to give a layer with a typical layer thickness between 0.5 and 1.5 pm. After spin coating the film can be heated at an elevated temperature to remove all residual volatile solvents.
  • a cross-linkable dielectric is used, it is preferably cross-linked after deposition by exposure to electron beam or electromagnetic (actinic) radiation, like for example X-ray, UV or visible radiation.
  • actinic radiation can be used having a wavelength of from 50 nm to 700 nm, preferably from 200 to 450 nm, most preferably from 300 to 400 nm.
  • Suitable radiation dosages are typically in the range from 25 to 3,000 mJ/cm 2 .
  • Suitable radiation sources include mercury, mercury/xenon, mercury/halogen and xenon lamps, argon or xenon laser sources, x-ray, or e-beam.
  • the exposure to actinic radiation will induce a cross-linking reaction in the cross-linkable groups of the dielectric material in the exposed regions. It is also possible for example to use a light source having a wavelength outside the absorption band of the cross-linkable groups, and to add a radiation sensitive photosensitizer to the cross- linkable material.
  • the dielectric material layer is annealed after exposure to radiation, for example at a temperature from 70°C to 130°C, for example for a period of from 1 to 30 minutes, preferably from 1 to 10 minutes.
  • the annealing step at elevated temperature can be used to complete the cross-linking reaction that was induced by the exposure of the cross- linkable groups of the dielectric material to photoradiation.
  • Removal of the solvent and any volatile additive(s) is preferably achieved by evaporation, for example by exposing the deposited layer to high temperature and/or reduced pressure, preferably at -50°C to 300°C, more preferably 20°C to 250°C.
  • the solvent(s) and any volatile additive can be evaporated under reduced pressure.
  • the pressure for solvent evaporation ranges from 10 "3 mbar to 1 bar, especially from 10 "2 mbar to 100 mbar and more preferably from 0.1 mbar to 10 mbar.
  • the evaporation of the solvent can be preferably achieved below the boiling point of the solvent.
  • the thickness of the dried OSC layer is preferably from 1 nm to 50 ⁇ , especially from 2 to 1000 nm and more preferably 3 to 500 nm.
  • Preferred layers comprising organic light emitting materials and/or charge
  • transporting materials can have a thickness in the range of 2 to 150 nm.
  • the OE device and its components can be prepared from standard materials and standard methods, which are known to the person skilled in the art and described in the literature.
  • polymer includes homopolymers and copolymers, e.g.
  • polymer as used hereinafter does also include oligomers and dendrimers.
  • Dendrimers are typically branched macromolecular compounds consisting of a multifunctional core group onto which further branched monomers are added in a regular way giving a tree-like structure, as described e.g. in M. Fischer and F. Vogtle, Angew. Chem., Int. Ed. 1999, 38, 885.
  • conjugated polymer means a polymer containing in its backbone (or main chain) mainly C atoms with sp 2 -hybridisation, or optionally sp-hybridisation, which may also be replaced by hetero atoms, enabling interaction of one ⁇ -orbital with another across an intervening ⁇ - bond. In the simplest case this is for example a backbone with alternating carbon-carbon (or carbon-hetero atom) single and multiple (e.g. double or triple) bonds, but does also include polymers with units like 1 ,3-phenylene. "Mainly” means in this connection that a polymer with naturally
  • conjugated polymer (spontaneously) occurring defects, which may lead to interruption of the conjugation, is still regarded as a conjugated polymer.
  • backbone comprises for example units like aryl amines, aryl phosphines and/or certain heterocycles (i.e.
  • conjugation via N-, 0-, P- or S-atoms and/or metal organic complexes (i.e. conjugation via a metal atom).
  • conjugation via a metal atom means a group connecting two rings (usually aromatic rings) consisting of C atoms or hetero atoms with sp 2 -hybridisation or sp-hybridisation. See also
  • the molecular weight is given as the number average molecular weight M n or as weight average molecular weight Mw, which unless stated otherwise are determined by gel permeation
  • small molecule means a monomeric, i.e. a non -polymeric compound. Unless stated otherwise, percentages of solids are per cent by weight ("wt. %"), percentages or ratios of liquids (like e.g. in solvent mixtures) are per cent by volume (“vol. %”), and all temperatures are given in degrees Celsius (°C). Unless stated otherwise, concentrations or proportions of mixture components, given in percentages or ppm are related to the entire formulation including the solvents.
  • Example 1 (Small molecule, flexo printed, top gate)
  • An OFET device was prepared as follows:
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 Compound A and 0.4 parts 350 000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts of mesitylene filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 5.
  • Example 2 (Small molecule, flexo printed, top gate)
  • An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • An OSC formulation was prepared by dissolving of 1.3 parts Compound A (as mentioned in Example 1) and 0.7 parts 350 000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts of mesitylene filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • Viscosity of 2.3cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec "1 to 1000 sec "1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 6.
  • Example 3 (Small molecule, flexo printed, top gate) An OFET device was prepared as follows:
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.3 parts Compound A (as mentioned in Example 1) and 0.7 parts 350 000 Mw polystyrene in 58.8 parts cyclohexylbenzene and 39.2 parts of mesitylene filtering the solution through a 0.2 ⁇ PTFE cartridge filter. Viscosity of 1.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec "1 to 1000 sec "1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • An OFET device was prepared as follows:
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol.
  • OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 350000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts o-xylene and filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then gravure printed as a wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 printer by directly contacting a 8 cm 3 /m 2 loaded anilox running at 90 m/min speed with the PEN substrate.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 8.
  • Example 5 (Small molecule, flexo printed, bottom gate)
  • An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • PEN Teonex Q65FA
  • D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • the electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 00°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in mesitylene filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 9.
  • Example 6 (Small molecule, flexo printed, bottom gate)
  • An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • PEN Teonex Q65FA
  • D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • the electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 1 :1 blend filtering the solution through a 0.2 ⁇ PTFE cartridge filter. Viscosity of 5.6cP as measured using an AR G-2 rheometer ex TA instruments.
  • the viscosity was measured over a shear rate range of 10 sec "1 to 1000 sec "1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
  • Example 7 Polymer, flexo printed, top gate
  • An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from methoxy propanol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • Teonex Q65FA film available from DuPont Teijin Flims
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1% polymer comprising
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 11.
  • Example 8 (Small molecule, flexo printed, bottom gate)
  • An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • PEN Teonex Q65FA
  • D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • the electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene, filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 12.
  • Example 9 (Small molecule, gravure printed, bottom gate,
  • Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 50 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 100°C for 10 minute, and then UV cured under UV light (306nm) for 5 minutes. Approximately 60 nm thick gold source drain electrodes were evaporated. The electrodes were treated with M001 (available from Merck Chemicals) SAM treatment by covering for 1min and then spin coating to remove excess M001 and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
  • M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compund A and 0.4 parts 6000000 Mw polystyrene in cyclohexylbenzene / mesitylene (1 :1) filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed using a CP 90-100-13 Sauerressig lab proofer.
  • the gravure cylinder had many cell depths in order to achieve different volumes.
  • the Anilox was 6.8 ml/m 2 .
  • the doctor blade was put into contact with the gravure cylinder, the formulation was placed in the nip between the doctor blade and the gravure cylinder and then rotated by hand.
  • the print head was then slowly pulled over the substrate.
  • the printed OSC layer was then annealed (forced air) at 70°C for 4 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 13.
  • Example 10 (Small molecule, gravure printed, top gate)
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with a 1000W oxygen plasma for 1 minute. The electrodes were treated with M001 (available from Merck Chemicals) SAM treatment by depositing a film and leaving for 1 minute and then spinning - off excess and evaporating the excess off on a hot plate at 100°C for 1 min.
  • M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compund A and 0.4 parts 6000000 Mw polystyrene in cyclohexylbenzene / mesitylene (1 :1) filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed using a CP 90-100-13 Sauerressig lab proofer.
  • the gravure cylinder had many cell depths in order to achieve different volumes.
  • the doctor blade was put into contact with the gravure cylinder, the formulation was placed in the nip between the doctor blade and the gravure cylinder and then rotated by hand.
  • the print head was then slowly pulled over the substrate.
  • the printed OSC layer was then annealed at 70°C for 4 minutes.
  • a dielectric layer of fluoro-polymer D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 70°C for 3 minutes and then 100 C for 1 minute, to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 14.
  • Example 11 (Small molecule, flexo printed, top gate, in
  • An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min. An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts PTAA in dimethoxytoluene filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic is depicted in Figure 15a and the linear and saturation mobility are depicted in Figure 15b.
  • Example 12 (Small molecule, flexo printed, top gate, in isochroman)
  • An OFET device was prepared as follows:
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts polvtriarylamine (PTAA) in isochroman 95 parts and 1-methy naphthalene 3 parts filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 16.
  • Example 13 (Small molecule, flexo printed, top gate, in tetralin)
  • An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts PTAA in tetralin filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic is depicted in Figure 17a and the linear and saturation mobility are depicted in Figure 17b.
  • Example 14 (Small molecule, flexo printed, top gate, butyl phenyl ether)
  • An OFET device was prepared as follows:
  • Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts Poly (alpha)methylstyrene having a weight average molecular weight below 10,000 g/mol in butyl phenyl ether filtering the solution through a 0.2 ⁇ PTFE cartridge filter. Viscosity of 1.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec-1 to 1000 sec-1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • a dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 18.
  • Example 15 (Small molecule, flexo printed, bottom gate)
  • An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • PEN Teonex Q65FA
  • D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • the electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 60/40 blend filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200.
  • the transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 19.
  • Example 16 (Small molecule, flexo printed, bottom gate) An OFET device was prepared as follows:
  • Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated.
  • the electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
  • LisiconTM M001 available from Merck Chemicals
  • An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.5 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 60:40 blend filtering the solution through a 0.2 ⁇ PTFE cartridge filter.
  • the OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm 3 /m 2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed.
  • the printed OSC layer was then annealed at 70°C for 3 minutes.
  • the transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 20.

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Abstract

The present invention relates to novel formulations comprising an organic semiconductor (OSC) and one or more organic solvents. The formulation comprises a viscosity at 25°C of less than 15 mPas and the boiling point of the solvent is at most 400°C. Furthermore, the present invention describes the use of these formulations as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and OLED devices, to methods for preparing OE devices using the novel formulations, and to OE devices, OLED devices and OPV cells prepared from such methods and formulations.

Description

Formulation and method for preparation
of organic electronic devices
Field of the Invention
The present invention relates to novel formulations comprising an organic semiconducting compound (OSC), to their use as conducting inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells, organic field effect transistors (OFET) and OLED devices, to methods for preparing OE devices using the novel
formulations, and to OE devices and OPV cells prepared from such methods and formulations.
Background and Prior Art
When preparing OLED devices usually printing techniques like inkjet printing, roll to roll printing, slot dye coating or gravure printing are used to apply the active layer. Based on the low solubility of most of the present organic compounds useful as emitting materials and/or charge transporting materials, these techniques need the use of solvents in high amounts.
In order to improve the film forming ability and the rheology, binding agents can be used. These additives are especially needed with regard to light emitting materials and/or charge transporting materials having small molecular weight or polymeric compounds having a low molecular weight.
The document WO 2009/109273 describes compositions comprising special solvents in order to achieve specific viscosity. Conventional compositions for printing applications like ink jet printing, flexographic or gravure printing need additives to increase ink viscosity and improve film formation.
The prior art provides compositions being useful in order to process low molecular weight organic light emitting and charge transporting materials. However, it is a permanent desire to improve the performance of the OLED layer, such as efficiency, life time and sensitivity regarding oxidation or water.
In addition thereto, the the formulation should enable a low-cost and easy printing process. The printing process should allow a high quality printing at high speed.
It is therefore desirable to have improved formulations comprising an OSC that are suitable for the preparation of OE devices, especially thin film transistors, diodes, OLED displays and OPV cells, which allow the manufacture of high efficient OE devices having a high performance, a long lifetime and a low sensitivity against water or oxidation. One aim of the present invention is to provide such improved formulations. Another aim is to provide improved methods of preparing an OE device from such formulations. Another aim is to provide improved OE devices obtained from such formulations and methods. Further aims are immediately evident to the person skilled in the art from the following description.
Surprisingly it has been found that these aims can be achieved, and the above-mentioned problems can be solved, by providing methods, materials and devices as claimed in the present invention, especially by providing a process for preparing an OE device using a formulation of the present invention. Furthermore, the document WO 2009/109273 describes compositions comprising special solvents in order to achieve specific viscosity.
Summary of the Invention
The invention relates to a formulation comprising one or more organic semiconducting compounds (OSC), and one or more organic solvents, characterized in that said formulation comprises a viscosity at 25°C of less than 15 mPas and the boiling point of the solvent is at most 400°C. The invention further relates to the use of a formulation as described above and below as coating or printing ink, preferably for the preparation of rigid or flexible OE devices, in particular for thin film transistors, diodes, OLED devices and rigid or flexible organic photovoltaic (OPV) cells and devices, preferably by flexographic or gravure printing.
The invention further relates to a process of preparing an organic electronic (OE) device, comprising the steps of a) depositing the formulation as described above and below onto a
substrate to form a film or layer, preferably by coating or printing, very preferably by flexographic or gravure printing
b) removing the solvent(s). The invention further relates to an OE device prepared from a formulation and/or by a process as described above and below.
The OE devices include, without limitation, organic field effect transistors (OFET), integrated circuits (IC), thin film transistors (TFT), Radio
Frequency Identification (RFID) tags, organic light emitting diodes (OLED), organic light emitting transistors (OLET), electroluminescent displays, organic photovoltaic (OPV) cells, organic solar cells (O-SC), flexible OPVs and O-SCs, organic laserdiodes (O-laser), organic integrated circuits (O-IC), lighting devices, sensor devices, electrode materials, photocon- ductors, photodetectors, electrophotographic recording devices, capacitors, charge injection layers, Schottky diodes, planarising layers, antistatic films, conducting substrates, conducting patterns, photocon- ductors, electrophotographic devices, organic memory devices, biosensors and biochips.
According to a preferred embodiment, the present invention provides organic light emitting diodes (OLED). OLED devices can for example be used for illumination, for medical illumination purposes, as signalling device, as signage devices, and in displays. Displays can be addressed using passive matrix driving, total matrix addressing or active matrix driving. Transparent OLEDs can be manufactured by using optically transparent electrodes. Flexible OLEDs are assessable through the use of flexible substrates.
The formulations, methods and devices of the present invention provide surprising improvements in the efficiency of the OE devices and the production thereof. Unexpectedly, the performance, the lifetime and the efficiency of the OE devices can be improved, if these devices are achieved by using a composition of the present invention. Furthermore, it was surprisingly found that these formulations are suitable for printing techniques, especially for flexographic and gravure printing. Furthermore, the composition of the present invention provides an astonishingly high level of film forming. Especially, the homogeneity and the quality of the films can be improved. In addition thereto, the present invention enables better printing of multi layer devices.
In addition thereto, the the formulations enable a low-cost and easy printing process. The printing processes allow a high quality printing at high speed. Detailed Description of the Invention
The present formulation has a a viscosity at 25°C of less than 15, more preferably less than 13, especially less than 11 and most preferably less than 10 mPas. Preferably, the formulation has a viscosity in the range of 0.5 to 9.5 mPas, especially from 1 to 9 mPas and more preferably from 1 ,5 to 8.5 mPas. According to a further aspect of the present invention, the viscosity is preferably situated in the range of 2 to 6 mPas. The viscosity is determined at a temperature of 25°C by measuring on AR-G2 rheometer manufactured by TA Instruments. This is measured using a parallel plate geometry.
The viscosity of the formulation can be achieved by using appropriate solvents and other additives in suitable amounts. Consequently, the formulation of the present invention comprises at least one organic solvent having a viscosity at 25°C of less than 15 mPas and a boiling point of at most 400°C. The solvent has a boiling point or sublimation temperature of < 400°C, especially < 350°C, more preferably < 300°C, most preferably < 250°C, at the pressure employed, very preferably at atmospheric pressure (1013 hPa). Evaporation can also be accelerated e.g. by applying heat and/or reduced pressure.
Further preferably the boiling point of the solvent, or of the lowest boiling solvent of the solvent blend, is at least 130°C, more preferably at least 150°C at atmospheric pressure (1013 hPa). According to a special embodiment of the present invention, the formulation may comprise a is mixture of organic compounds as solvent having different boiling points and the boiling point of the compound with the lowest boiling point is at least 10°C below the boiling point of the compound with the highest boiling point.
Furthermore, the formulation may comprise a mixture of organic compounds as solvent having boiling points and the boiling point of the compound with the lowest boiling point is at most 100°C below the boiling point of the compound with the highest boiling point.
The partition ratio log P (in the literature also referred to as "partition coefficient") of a compound or solvent is given by equation (1) log P = log ([A]oct / [A]aq) (1) wherein [A]oct is the concentration of the compound or solvent in octanol and [A]aq is the concentration of the compound or solvent in water. (See lUPAC Compendium of Chemical Terminology, Electronic version, http://goldbook.iupac.org/P04440.html, PAC 1993, 65, 2385, and C. Hansch, Acc. Chem. Res. 2, 232, (1969)). In case of a solvent blend, which comprises two or more solvents, the partition ratio of the blend is defined as the weighted average (log P)w of the partition ratios of all solvents contained in the blend, as given by equation (2) (log P)w = | ,. iog/> (2)
=1 with n being the number of solvents, log Pi being the log P value of a single solvent in the solvent blend, and Wj being the weight fraction (concentration in % by weight/100) of said solvent in the solvent blend.
The log P values are measured by measuring the concentration in each phase (e.g. by GC, HPLC, UV/vis etc.) after equilibrating a dilute solution in equal volumes of water and octanol. For a rough estimation log P can be calculated by molecular calculation using "Chem Bio Draw Ultra version 1 1.0 (2007)" software, produced and marketed by Cambridge Soft., unless stated otherwise. According to a preferred embodiment of the present invention, the logarithm of the partition ratio log P of the solvent, or the weighted average of the partition ratio (log P)w of the solvent blend is >1.5, more preferably > 2 and most preferably > 2.5. Preferably these values relate to the calculated log P for each solvent.
The solvents can generally be selected from any chemical class that meets the physical criteria mentioned above, including, but not limited to, aliphatic or aromatic hydrocarbons, amines, thiols, amides, esters, ethers, polyethers, alcohols, diols and polyols. Preferably, the solvent comprises at least one aromatic and/or heteroaromatic compound. Suitable and preferred solvents include for example aromatic
hydrocarbons (eg halogenated aromatics) and aromatic hydrocarbons having an alkyl group having 1 to 8 carbon atoms and more preferably 1 to 6 carbon atoms especially toluene, dimethyl benzenes (xylenes), trimethyl benzenes, and methyl naphthalenes; and aromatic hydrocarbon
compound having a cycloalkyl group, especially cyclopentyl benzene and cyclohexyl benzene.
According to a further embodiment of the present invention, aromatic compounds comprising hetero atoms may be used such as esters, ethers, nitriles or amides. Preferably, these compounds include aromatic alkoxy compunds such as 3-methylanisol, 2-isopropylanisol, 5-methoxyindan, 2- ethoxynaphthalene, aromatic esters such as butylbenzoate, ethylbenzoate.
Furthermore, heteroaromatic compounds having at least one O, N or S atom in the aromatic ring are preferred. These compounds include e.g. 2- bromo-3-(bromomethyl)thiophene, 2-methylindole, 6-methyl quinoline and thiophene.
The solvents can be used as mixture of two, three or more.
Astonishing improvements can be achieved with mixtures of hydrocarbon aromatic compounds. Preferably, the mixture can comprise at least one aromatic hydrocarbon having an alkyl group having 1 to 8 carbon atoms and at least one aromatic hydrocarbon compound having a cycloalkyl group.
Preferred organic solvents can comprise Hansen Solubility parameters of Hd in the range of 17.0 to 23.2 MPa05, Hp in the range of 0.2 to 12.5 MPa0 5 and Hh in the range of 0.0 to 20.0 MPa0 5. More preferred organic solvents comprise Hansen Solubility parameters of Hd in the range of 17.0 to 23.2 MPa05, Hp in the range of 0.2 to 10.5 MPa0 5 and Hh in the range of 0.0 to 5.0 MPa0 5.
Particular useful organic solvents comprise a surface tension of in the range of 22 to 50 mN/m, especially in the range of 25 to 40 mN/m, and more preferably of in the range of 28 to 37 mN/m. According to a special aspect of the present invention a mixture of solvents can be used having different surface tensions. Preferably, the mixture can comprise at least one solvent having a surface tension of at most 35 mN/m, especially of at most 30 mN/m and at least one solvent having a surface tension of at least 30, especially of at least 32 mN/m and the difference of the surface tension is at least 1 mN/m, more preferably at least 2 mN/m. The surface tension can be measured using a FTA (First Ten Angstrom) 125 contact angle goniometer at 25°C. Details of the method are available from First Ten Angstrom as published by Roger P. Woodward, Ph.D.
"Surface Tension Measurements Using the Drop Shape Method".
Preferably, the pendant drop method can be used to determine the surface tension.
For the purpose for making a rough estimate, the surface tension can be calculated using the Hansen Solubility Parameters by the formula expounded in Hansen Solubility Parameters: A User's Handbook, Second Edition, C. M. Hansen (2007), Taylor and Francis Group, LLC (HSPiP manual).
Surface tension = 0.0146 x (2.28 x 6Hd 2 + δΗρ 2 + 6Hh 2) x MVol0 2, where:
Hd refers to Dispersion contribution
Hp refers to Polar contribution
Hh refers to Hydrogen bonding contribution
MVol refers to Molar Volume. The Hansen Solubility Parameters can be determined according to the
Hansen Solubility Parameters in Practice (HSPiP) program (2nd edition) as supplied by Hanson and Abbot et al. Suitable solvents, their Hansen Solubility Parameters, their surface tension and their boiling points are provided in Table 1 . Table 1 : Hansen Solubility Parameters of useful solvents
Hd Hh Hp Surface Boiling Point
[MPa05] [MPa05] [MPa05] Tension [mN/m] [X]
Solvent
Calc. (Actual) Calc. (Actual)
1 ,2,3,4-tetrahydronaphthalene (tetralin) 19.1 2.3 4 33.3 (33.2) 206.9 (207)
1 ,2,3,4-tetramethylbenzene 18.7 1.8 1.6 32.0 198.5 0
1 ,2,3,5-tetramethylbenzene 18.7 1.8 1.6 32.0 198.5 0
1 ,2,3-trimethylbenzene 19.0 2.9 1.6 32.6 171.6 0
1 ,2,4,5-tetramethylbenzene 18.7 1.8 1.6 32.0 198.5 0
1 ,2,4-trichlorobenzene 20.5 6.9 2.7 39.0 204.8 0
1 ,2,4-trimethylbenzene 19.0 2.9 1.6 32.6 171.6 0
1 ,2-dihydronaphthalene 20.1 5.5 4.9 37.7 209.5 (206)
1 ,2-dimethylnaphthalene 17.6 1.7 5.2 29.9 261.5 (266)
1 ,3,3-trimethyl-2-methyleneindole 17.9 1 3 30.6 296.9 (248)
1 ,3-benzodioxole 19.7 7.4 7.9 37.1 169.5 0
1 ,3-diisopropylbenzene 17.5 0.2 1.1 29.2 200 0
1 ,3-dimethylnaphthalene 17.6 1.7 5.2 29.9 261.5 (263)
1 ,4-benzodioxane 19.5 8.7 7.2 37.8 178.7 0
1 ,4-diisopropylbenzene 17.5 0.6 1.6 29.2 206.7 0
1 ,4-dimethylnaphthalene 17.6 1.7 5.2 29.9 261.5 (262)
1 ,5-dimethyltetralin 19.3 5.5 2.6 36.2 243 0
1-benzothiophene 19.7 12.3 6.3 36.5 107.5 0
1 -bromonaphthalene 20.1 10.3 6.1 37.9 262.8 (133)
1-chloromethyl naphthalene 19.6 9.9 5.3 36.6 285 (287)
1-ethylnaphthalene 18.8 7.8 4.4 33.2 254 (258)
1-methoxynaphthalene 19.1 10.5 7.5 35.2 260.8 (269)
1 -methyl naphthalene 19.2 8.4 4.5 34.0 (36.3) 240 (243)
1-methy lindane 19.4 5.7 2.5 35.2 199.1 0
1-methylindole 19.2 8.1 10 35.7 90 (133)
2,3,3-trimethoxyindolenine 19.6 6.8 4.2 37.7 228.4 (228)
2,3-benzofuran 21.3 5.5 5.6 38.0 113.7 0
2,3-dihydrobenzofuran 19.9 9.5 6.6 39.0 180.4 0
2,3-dimethylanisol 18.9 4.6 4.5 33.7 192.8 0
2,4-dimethylanisol 18.9 4.6 4.5 33.7 192.8 0
2,5-dimethylanisol 18.9 4.6 4.5 33.7 192.8 0
2,6-diisopropyl naphthalene 16.8 3.5 2.2 28.3 299 (300)
2,6-dimethylanisol 18.9 4.6 4.5 33.7 192.8 0
2,6-dimethylnaphthalene 17.6 5 3 29.9 261.5 (262)
2-bromo-3-(bromomethyl)thiophene 19.3 7.3 6.6 36.4 236.4 0
2-bromomethyl naphthalene 19.6 9.4 7.2 37.4 289.6 (291)
2-bromonaphthalene 20.1 10.3 6.1 37.9 262.8 (281)
2-ethoxynaphthalene 18.7 10 7 34.3 271.6 (282)
2-ethylnaphthalene 18.8 7.8 4.4 33.2 254.1 (251)
2-isopropylanisol 17.7 4.3 5.4 30.8 201.5 0
2-methyl quinoline 20.0 7.8 4 35.7 141.5 0
2-methylanisol 18.3 5.1 6.2 31.9 169 0
2-methylindole 17.8 9.7 4.8 29.6 134.3 (228)
3,4-dimethyl anisole 18.9 4.6 4.5 33.7 192.8 (201)
3,5-dimethylanisol 18.9 4.6 4.5 33.7 192.8 0
3-bromoquinoline 21.4 8.7 5.1 41.2 169.3 0
3-isopropvlbiphenyl 19.1 1.3 1.9 35.3 277.1 0
3-methylanisol 18.7 5.7 5.4 33.1 171.7 0
4-isopropylbiphenyl 19.0 2.5 1.9 35.2 282.4
4-methyl anisole 18.6 5.9 7.2 33.8 178.5 (174)
4-phenyl-2-butanone (benzyl acetone) 18.3 8.8 5 34.4 241.4
5-decanolide 17.1 7.8 3.8 30.7 278.4
5-methoxyindan 19.8 9.8 4 39.7 235.9 (232.5)
5-methoxyindole 17.4 12.3 7.8 32.7 158.2 (176)
5-tert-butvl-m-xylene 17.6 3.4 2.2 30.1 213.8 Hd Hh Hp Surface Boiling Point
[MPa05] [MPa05] [MPa05] Tension [mN/m] [°C]
Solvent
Calc. (Actual) Calc. (Actual)
6-methoxy-1 , 2,3,4- tetrahydronapthalene 19.4 6.8 5.4 37.6 241 (269)
6-methyl quinoline 21.7 8.4 4.5 41.9 140.4
8-methyl quinoline 21.7 8.4 4.5 41.9 140.4
Acetophenone 18.8 10.8 5.5 36.1 187.1
Anisole 18.5 5.5 5.2 31.4 (34.5) 144.8 (154) a-pinene 17.4 3 3.2 28.5 (27.6) 165.2
Benzonitrile 19.2 11.9 4.7 36.9 (39.0) 193.7
Benzothiazole 21.3 5.5 5.6 38.0 113.7 benzyl acetate 18.2 7.3 6.4 33.5 215.8
Bromobenzene 19.8 7.6 4.3 35.8 162.9
Butylbenzene 17.6 2.6 1.7 28.7 183.1
Butylbenzoate 17.7 5.9 5.2 31.9 241.8
Butyl phenyl ether 17.8 4.1 5 30.9 208 (210)
Cyclohexylbenzene 18.6 1 1.6 32.3 (34.3) 238.7 (239)
Decahydronaphthalene 17.5 0.4 1 28.2 (30.9) 192 (189) dimethoxytoluene 18.8 6.5 7 35.8 225 diphenyl ether 19.9 2.9 3.3 37.1 268.4 (259) ethyl phenyl keton (propiophenone) 18.3 8.9 5.3 33.9 202.5
Ethylbenzene 18.2 2.7 2.1 29.3 (28.6) 141.1
Ethylbenzoate 18.1 6.6 5.9 32.5 210 (212) gamma-terpinene 18.0 2.5 2.8 30.2 180.4
Hexylbenzene 17.4 2.9 1.6 29.2 226.2
Indan 19.7 7.3 5.8 37.0 188.9 (176) indene 20.3 4.4 5.4 37.3 188.6 iso-amylbenzene 17.1 3.7 1.8 28.0 198.5 iso-butylbenzene 17.1 2.9 1.6 27.2 179.3
Isochroman 19.6 5.4 3.8 35.4 201 isopropylbenzene (cumene) 17.8 2 1.1 28.5 (27.4) 155 m-cymene 18.1 2 2.1 30.3 173.7 mesitylene 19.0 2.9 1.6 32.6 (28.5) 171.6 (166) methyl benzoate 18.5 7.9 6.4 34.8 215.8 methylphenylacetate 18.2 7.3 6.4 33.5 215.8 m-xylene 18.8 3.1 2.7 31.4 144.8 n-butoxy benzene 17.5 4.4 4.1 29.7 202.1 n-butylbenzene 17.6 2.6 1.7 28.7 183.1 n-propyl benzoate (propyl benzoate) 17.8 6.6 6.3 32.5 222.7 n-propylbenzene 17.8 3.4 2.8 29.1 161.5 o-dichlorobenzene 19.5 8.7 3.3 35.9 179.8 o-diethylbenzenes 17.7 0.7 1.9 32.6 321.3 o-ethyltoluene 18.0 1.9 2.8 29.4 161.5 o-xylene 18.4 2 2.9 29.9 (29.5) 147.7 pentylbenzene 17.4 3 1.8 28.7 204.1 p-ethyltoluene 18.3 3.5 2.8 30.7 168.6 phenetol 18.1 4.6 4.6 30.5 163.7 (170) phenyl acetate 18.5 7.9 6.4 34.0 194.4 p-isopropyltoluene (p-cymene) 18.0 2.5 2.8 30.2 180.4 propiophenone 18.3 8.9 5.3 33.9 202.5 p-xylene 18.7 3.3 3.3 31.3 (27.8) 151.7 sec-butylbenzene 17.2 2.2 1.6 27.3 176.8 t-butylbenzene 17.2 1.3 2.9 27.5 168 thiophene 18.8 5.2 7.4 30.9 91.9 toluene 18.6 4 2.2 30.0 118.3 veratrole 18.2 6.3 8 33.1 190 (206)
Ha refers to Dispersion contribution Hp refers to Polar contribution
Hh refers to Hydrogen bonding contribution
The present formulation comprises at least one organic semiconducting compound (OSC). The OSC compounds can be selected from standard materials known to the skilled person and described in the literature. The OSC may be a monomeric compound (also referred to as "small molecule", as compared to a polymer or macromolecule), a polymeric compound, or a mixture, dispersion or blend containing one or more compounds selected from either or both of monomeric and polymeric compounds.
In one preferred embodiment of the present invention the OSC is selected from monomeric compounds, where it is easier to achieve a significant variation in the degree of crystallinity.
According to an aspect of the present invention, the OSC is preferably a conjugated aromatic molecule, and contains preferably at least three aromatic rings, which can be fused or unfused. Unfused rings are connected e.g. via a linkage group, a single bond or a spiro-linkage.
Preferred monomeric OSC compounds contain one or more rings selected from the group consisting of 5-, 6- or 7-membered aromatic rings, and more preferably contain only 5- or 6-membered aromatic rings. The material may be a monomer, oligomer or polymer, including mixtures, dispersions and blends.
Each of the aromatic rings optionally contains one or more hetero atoms selected from Se, Te, P, Si, B, As, N, O or S, preferably from N, O or S. The aromatic rings may be optionally substituted with alkyl, alkoxy, polyalkoxy, thioalkyl, acyl, aryl or substituted aryl groups, halogen, particularly fluorine, cyano, nitro or an optionally substituted secondary or tertiary alkylamine or arylamine represented by -N(Rx)(Ry), where Rx and Ry independently of each other denote H, optionally substituted alkyl, optionally substituted aryl, alkoxy or polyalkoxy groups. Where Rx and/or Ry denote alkyl or aryl these may be optionally fluorinated. Preferred rings are optionally fused, or are optionally linked with a conjugated linking group such as -C(T1)=C(T2)-, -C≡C- -N(RZ)-, -N=N-, -(RZ)C=N-, -N=C(RZ)-, wherein T1 and T2 independently of each other denote H, CI, F, -C≡N- or a lower alkyl group, preferably a C1-4 alkyl group, and Rz denotes H, optionally substituted alkyl or optionally substituted aryl. Where Rz is alkyl or aryl these may be optionally fluorinated.
Preferred OSC compounds include small molecules (i.e. monomeric compounds), polymers, oligomers and derivatives thereof, selected from condensed aromatic hydrocarbons such as tetracene, chrysene, pentacene, pyrene, perylene, coronene, or soluble substituted derivatives of the aforementioned; oligomeric para substituted phenylenes such as p- quaterphenyl (p-4P), p-quinquephenyl (p-5P), p-sexiphenyl (p-6P), or soluble substituted derivatives of the aforementioned; conjugated hydrocarbon polymers such as polyacene, polyphenylene, poly(phenylene vinylene), polyfluorene, polyindenofluorene, including oligomers of these conjugated hydrocarbon polymers; conjugated heterocyclic polymers such as poly(3-substituted thiophene), poly(3,4-bisubstituted thiophene), polyselenophene, poly(3-substituted selenophene), poly(3,4-bisubstituted selenophene), polybenzothiophene, polyisothianapthene, poly(/V- substituted pyrrole), poly(3-substituted pyrrole), poly(3,4-bisubstituted pyrrole), polyfuran, polypyridine, poly-1 ,3,4-oxadiazole, polyiso- thianaphthene, poly(/\/-substituted aniline), poly(2-substituted aniline), poly(3-substituted aniline), poly(2,3-bisubstituted aniline), polyazulene, polypyrenepolybenzofuran; polyindole, polypyridazine, polytriarylamines such as optionally substituted polytriphenylamines; pyrazoline compounds; benzidine compounds; stilbene compounds; triazines; substituted metallo- or metal-free porphines, phthalocyanines, fluorophthalocyanines, naphthalocyanines or fluoronaphthalocyanines; C6o and C70 fullerenes or derivatives thereof; Λ/,Λ/'-dialkyl, substituted dialkyl, diaryl or substituted diaryl-1 ,4,5,8-naphthalenetetracarboxylic diimide and fluoro derivatives; N,N -dialkyl, substituted dialkyl, diaryl or substituted diaryl 3,4,9,10- perylenetetracarboxylic diimide; bathophenanthroline; diphenoquinones; ,3,4-oxadiazoles; 11 , 1 ,12,12-tetracyanonaptho-2,6-quinodimethane; a,a )is(dithieno[3,2-b:2\3'-d]thiophene); 2,8-dialkyl, substituted dialkyl, diaryl or substituted diary) anthradithiophene; 2, 2'-bibenzo[1 ,2-b:4,5-b']- dithiophene. Preferred compounds are those from the above list and derivatives thereof which are soluble. Especially preferred OSC materials are substituted polyacenes, such as 6,13-bis(trialkylsilylethynyl)pentacene or derivatives thereof, such as 5,11- bis(trialkylsilylethynyl)anthradithiophenes, as described for example in US 6,690,029, WO 2005/055248 A1 , or WO 2008/107089 A1. A further preferred OSC material is poly(3-substituted thiophene), very preferably poly(3-alkylthiophenes) (P3AT) wherein the alkyl group is preferably straight-chain and preferably has 1 to 12, most preferably 4 to 10 C-atoms, like e.g. poly(3-hexylthiophene).
Particularly preferred polymeric OSC compounds are polymers or copolymers comprising one or more repeating units selected from the group consisting of thiophene-2,5-diyl, 3-substituted thiophene-2,5-diyl, optionally substituted thieno[2,3-b]thiophene-2,5-diyl, optionally substituted thieno[3,2-b]thiophene-2,5-diyl, selenophene-2,5-diyl, 3-substituted selenophene-2,5-diyl, optionally substituted indenofluorene, optionally substituted phenanthrene and optionally substituted triarylamine.
The composition according to the present invention can comprise between 0.01 and 20% by weight, preferably between 0.1 and 15% by weight, more preferably between 0.2 and 10% by weight and most preferably between 0.25 and 5% by weight of OSC materials or the corresponding blend. The percent data relate to 100% of the solvent or solvent mixture. The composition may comprise one or more than one, preferably 1 , 2, 3 or more than three OSC compounds. The organic semiconductor compound used here is either a pure component or a mixture of two or more components, at least one of which must have semiconducting properties. In the case of the use of mixtures, however, it is not necessary for each component to have semiconducting properties. Thus, for example, inert low-molecular-weight compounds can be used together with semiconducting polymers. It is likewise possible to use non-conducting polymers, which serve as inert matrix or binder, together with one or more low-molecular-weight compounds or further polymers having semiconducting properties. For the purposes of this application, the potentially admixed non-conducting component is taken to mean an electro-optically inactive, inert, passive compound.
Preference is given to solutions of polymeric organic semiconductors, which optionally comprise further admixed substances. The molecular weight Mwof the polymeric organic semiconductor is preferably greater than 10,000 g/mol, more preferably between 50,000 and 2,000,000 g/mol and most preferably between 100,000 and 1 ,000,000 g/mol.
For the purposes of the present invention, polymeric organic semiconductors are taken to mean, in particular, (i) substituted poly-p-arylene- vinylenes (PAVs) as disclosed in EP 0443861 , WO 94/20589,
WO 98/27136, EP 1025183, WO 99/24526, DE 19953806 and
EP 0964045 which are soluble in organic solvents, (ii) substituted polyfluorenes (PFs) as disclosed in EP 0842208, WO 00/22027,
WO 00/22026, DE 19846767, WO 00/46321, WO 99/54385 and
WO 00155927 which are soluble in organic solvents, (iii) substituted polyspirobifluorenes (PSFs) as disclosed in EP 0707020, WO 96/17036, WO 97/20877, WO 97/31048, WO 97/39045 and WO 031020790 which are soluble in organic solvents, (iv) substituted poly-para-phenylenes (PPPs) or -biphenylenes as disclosed in WO 92/18552, WO 95/07955, EP 0690086, EP 0699699 and WO 03/099901 which are soluble in organic solvents, (v) substituted polydihydrophenanthrenes (PDHPs) as disclosed in WO 05/014689 which are soluble in organic solvents, (vi) substituted poly-trans-indenofluorenes and poly-cis-indenofluorenes (PIFs) as disclosed in WO 04/041901 and WO 04/113412 which are soluble in organic solvents, (vii) substituted polyphenanthrenes as disclosed in DE 102004020298 which are soluble in organic solvents, (viii) substituted polythiophenes (PTs) as disclosed in EP 1028136 and WO 95/05937 which are soluble in organic solvents, (ix) polypyridines (PPys) as disclosed in T. Yamamoto et at., J. Am. Chem. Soc. 1994, 116, 4832 which are soluble in organic solvents, (x) polypyrroles as disclosed in V. Gelling et at., Polym. Prepr. 2000, 41, 1770 which are soluble in organic solvents, (xi) substituted, soluble copolymers having structural units from two or more of classes (i) to (x), as described, for example, in
WO 02/077060, (xii) conjugated polymers as disclosed in Proc. of
ICSM '98, Part I & II (in: Synth. Met 1999, 101/102) which are soluble in organic solvents, (xiii) substituted and unsubstituted polyvinylcarbazoles (PVKs), as disclosed, for example, in R. C. Penwell et al., J. Polym. Sci., Macromol Rev. 1978, 13, 63-160, (xiv) substituted and unsubstituted triarylamine polymers, as disclosed, for example, in JP 2000/072722, (xv) substituted and unsubstituted polysilylenes and polygermylenes, as disclosed, for example, in M. A. Abkowitz and M. Stolka, Synth. Met. 1996, 78, 333, and (xvi) soluble polymers containing phosphorescent units, as disclosed, for example in EP 1245659, WO 03/001616, WO 03/018653, WO 03/022908, WO 03/080687, EP 1311138, WO 031102109,
WO 04/003105, WO 04/015025, DE 102004032527 and some of the specifications already cited above.
According to a further embodiment of the present invention, the organic semiconducting compound preferably has a molecular weight of
5000 g/mol or less, especially a molecular weight of 2000 g/mol or less. According to a special embodiment of the present invention, the OSC can be used for example as the active channel material in the semiconducting channel of an OFET, or as a layer element of an organic rectifying diode.
In case of OFET devices, where the OFET layer contains an OSC as the active channel material, it may be an n- or p- type OSC. The semiconducting channel may also be a composite of two or more OSC compounds of the same type, i.e. either n- or p-type. Furthermore, a p-type channel OSC compound may for example be mixed with an n-type OSC compound for the effect of doping the OSC layer. Multilayer semiconductors may also be used. For example, the OSC may be intrinsic near the insulator interface and a highly doped region can additionally be coated next to the intrinsic layer.
Preferred OSC compounds have a FET mobility of greater than
1x10"5 cmW1, very preferably greater than 1x10~2 cm2 vV1. - 16-
Figure imgf000018_0001
Figure imgf000019_0001
wherein n is an integer >1 , preferably from 10 to 1 ,000,
R on each occurrence identically or differently denotes H, F, CI, Br, I, CN, a straight-chain, branched or cyclic alkyl group having from 1 to 40 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR°=CR° or C≡C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups Rs, and wherein one or more groups R may also form a mono- or polycyclic aliphatic or aromatic ring system with one another and/or with the ring to which they are attached,
Rs on each occurrence identically or differently denotes F, CI, Br, I, CN, Sn(R00)3, Si(R00)3 or B(R00)2 a straight-chain, branched or cyclic alkyl group having from 1 to 25 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR°=CR°, C≡C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or Rs denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups Rs, and wherein one or more groups Rs may also form a ring system with one another and/or with R, R' on each occurrence identically or differently denotes H, F, CI, CN, alkyl having from 1 to 12 C atoms or aryl or heteroaryl having from 4 to 10 ring atoms,
R 00 on each occurrence identically or differently denotes H or an aliphatic or aromatic hydrocarbon group having from 1 to 20 C atoms, wherein two groups R00 may also form a ring together with the hetero atom (Sn, Si or B) to which they are attached, is 0, 1 , 2, 3 or 4, s is 0, 1 , 2, 3, 4 or 5, wherein R in formulae P1-P5 is preferably different from H. Especially preferred monomeric OSC compounds are selected from the group consisting of substituted oligoacenes such as pentacene, tetracene or anthracene, or heterocyclic derivatives thereof, like
bis(trialkylsilylethynyl) oligoacenes or bis(trialkylsilylethynyl) heteroacenes, as disclosed for example in US 6,690,029, WO 2005/055248 A1 or US 7,385,221.
Particularly preferred monomeric OSC compounds are selected from formula M1 (polyacenes):
Figure imgf000020_0001
wherein each of R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R 1 and R12, which may be the same or different, independently represents: hydrogen; an optionally substituted C-i-C-40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C4o aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group
(-C(=0)NH2); a haloformyl group (-C(=0)-X, wherein X represents a halogen atom); a formyl group (-C(=0)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl or alkynylsilyl group; and wherein independently each pair of R1 and R2, R2 and R3, R3 and R4, R7 and R8, R8 and R9, R9 and R10, is optionally cross-bridged to form a C4- C40 saturated or unsaturated ring, which saturated or unsaturated ring may be intervened by an oxygen atom, a sulphur atom or a group of the formula -N(Ra)-, wherein Ra is a hydrogen atom or an optionally substituted hydrocarbon group, or may optionally be substituted; and wherein one or more of the carbon atoms of the polyacene skeleton may optionally be substituted by a heteroatom selected from N, P, As, O, S, Se and Te; and wherein independently any two or more of the substituents R1-R12 which are located on adjacent ring positions of the polyacene may, together, optionally constitute a further C4-C4o saturated or unsaturated ring optionally intervened by O, S or -N(Ra), where Ra is as defined above, or an aromatic ring system, fused to the polyacene; and wherein n is 0, 1 , 2, 3 or 4 preferably n is 0, 1 or 2, most preferably n is 0 or 2, meaning that the polyacene compound is a pentacene compound (if n=2) or a "pseudo pentacene" compound (if n=0). Very preferred are compounds of formula M1a (substituted pentacenes):
wherein R1, R2, R3, R4,R7, R8, R9, R10, R15, R16, R17 each independently are the same or different and each independently represents: H; an optionally substituted C1-C40 carbyl or hydrocarbyl group; an optionally substituted C1-C40 alkoxy group; an optionally substituted C6-C4o aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group
(-C(=O)NH2); a haloformyl group (-C(=O)-X, wherein X represents a halogen atom); a formyl group (-C(=0)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and A represents Silicon or Germanium; and wherein independently each pair of R and R , R and R , R and R , R7 and R8, R8 and R9, R9 and R10, R15 and R 6, and R16 and R17 is optionally cross-bridged with each other to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring is optionally intervened by an oxygen atom, a sulphur atom or a group of the formula -N(Ra)-, wherein Ra is a hydrogen atom or a hydrocarbon group, or is optionally substituted; and wherein one or more of the carbon atoms of the polyacene skeleton is optionally substituted by a heteroatom selected from N, P, As, O, S, Se and Te. Further preferred are compounds of formula M1b (substituted
heteroacenes):
Figure imgf000023_0001
wherein R2, R3, R8, R9, R15, R16, R17 each independently are the same or different and each independently represents: H; an optionally substituted C C4o carbyl or hydrocarbyl group; an optionally substituted Ci-C40 alkoxy group; an optionally substituted C6-C40 aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C40 alkoxycarbonyl group; an optionally substituted C7-C40 aryloxy- carbonyl group; a cyano group (-CN); a carbamoyl group (-C(=O)NH2); a haloformyl group (-C(=0)-X, wherein X represents a halogen atom); a formyl group (-C(=0)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and A represents Silicon or Germanium; and wherein independently each pair of R2 and R3, R8 and R9, R15 and R16, and R16 and R17 is optionally cross-bridged with each other to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring is optionally intervened by an oxygen atom, a sulphur atom or a group of the formula -N(Ra)-, wherein Ra is a hydrogen atom or a hydrocarbon group, and is optionally substituted; and wherein one or more of the carbon atoms of the polyacene skeleton is optionally substituted by a heteroatom selected from N, P, As, O, S, Se and Te.
Especially preferred are compounds of subformula M1b, wherein at least one pair of R2 and R3, and R8 and R9 is cross-bridged with each other to form a C -C4o saturated or unsaturated ring, which is intervened by an oxygen atom, a sulphur atom or a group of the formula -N(Ra)-, wherein Ra is a hydrogen atom or a hydrocarbon group, and which is optionally substituted. Especially preferred are compounds of subformula M1b1 (silylethynylated heteroacenes):
Figure imgf000024_0001
one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-, one of Y3 and Y denotes -CH= or =CH- and the other denotes -X-, is -O-, -S-, -Se- or -NR"'-,
R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy that have 1 to 20, preferably 1 to 8 C-atoms and are optionally fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, preferably C6F5, or C02R"", with R"" being H, optionally fluorinated alkyl having 1 to 20 C-atoms or optionally fluorinated aryl having 2 to 30, preferably 5 to 20 C-atoms,
R" is, in case of multiple occurrence independently of one another, cyclic, straight-chain or branched alkyl or alkoxy that have 1 to 20, preferably 1 to 8 C-atoms, or aryl having 2 to 30 C-atoms, all of which are optionally fluorinated or perfluorinated, with SiRn3 preferably being trialkylsilyl,
R'" is H or cyclic, straight-chain or branched alkyl with 1 to 10 C-atoms, preferably H, m is O or l , o is 0 or 1.
Especially preferred are compounds of formula M1b1 wherein m and o are 0, and/or X is S, and/or R' is F.
In a preferred embodiment the compound of subformula M1 b1 is provided and used as a mixture of the anti- and syn-isomers of the following formulae
Figure imgf000025_0001
Figure imgf000026_0001
wherein X, R, R', R" m and o have independently of each other one of the meanings given in formula M1b1 or one of the preferred meanings given above and below, X is preferably S, and m and o are preferably 0.
The term "carbyl group" as used above and below denotes any mono- valent or multivalent organic radical moiety which comprises at least one carbon atom either without any non-carbon atoms (like for example -C≡C-), or optionally combined with at least one non-carbon atom such as N, O, S, P, Si, Se, As, Te or Ge (for example carbonyl etc.). The term "hydrocarbyl group" denotes a carbyl group that does additionally contain one or more H atoms and optionally contains one or more hetero atoms like for example N, O, S, P, Si, Se, As, Te or Ge.
A carbyl or hydrocarbyl group comprising a chain of 3 or more C atoms may also be straight-chain, branched and/or cyclic, including spiro and/or fused rings.
Preferred carbyl and hydrocarbyl groups include alkyl, alkoxy,
alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and alkoxycarbonyloxy, each of which is optionally substituted and has 1 to 40, preferably 1 to 25, very preferably 1 to 18 C atoms, furthermore optionally substituted aryl or aryloxy having 6 to 40, preferably 6 to 25 C atoms, furthermore
alkylaryloxy, arylcarbonyl, aryloxycarbonyl, arylcarbonyloxy and
aryloxycarbonyloxy, each of which is optionally substituted and has 6 to 40, preferably 7 to 40 C atoms, wherein all these groups optionally contain one or more hetero atoms, especially selected from N, O, S, P, Si, Se, As, Te and Ge. The carbyl or hydrocarbyl group may be a saturated or unsaturated acyclic group, or a saturated or unsaturated cyclic group. Unsaturated acyclic or cyclic groups are preferred, especially aryl, alkenyl and alkynyl groups (especially ethynyl). Where the C1-C40 carbyl or hydrocarbyl group is acyclic, the group may be straight-chain or branched. The C1-C40 carbyl or hydrocarbyl group includes for example: a C1-C40 alkyl group, a C2-C4o alkenyl group, a C2-C4o alkynyl group, a C3-C40 allyl group, a C4-C40 alkyldienyl group, a C4-C40 polyenyl group, a C6-Ci8 aryl group, a C6-C o alkylaryl group, a C6-C4o arylalkyl group, a C4-C40 cycloalkyl group, a C4- C40 cycloalkenyl group, and the like. Preferred among the foregoing groups are a C1-C20 alkyl group, a C2-C2o alkenyl group, a C2-C20 alkynyl group, a C3-C2o allyl group, a C4-C20 alkyldienyl group, a C6-Ci2 aryl group and a C4-C20 polyenyl group, respectively. Also included are combinations of groups having carbon atoms and groups having hetero atoms, like e.g. an alkynyl group, preferably ethynyl, that is substituted with a silyl group, preferably a trialkylsilyl group.
Aryl and heteroaryl preferably denote a mono-, bi- or tricyclic aromatic or heteroaromatic group with up to 25 C atoms that may also comprise condensed rings and is optionally substituted with one or more groups L, wherein L is halogen or an alkyl, alkoxy, alkylcarbonyl or alkoxycarbonyl group with 1 to 12 C atoms, wherein one or more H atoms may be replaced by F or CI. Especially preferred aryl and heteroaryl groups are phenyl in which, in addition, one or more CH groups may be replaced by N, naphthalene, thiophene, selenophene, thienothiophene, dithienothiophene, fluorene and oxazole, all of which can be unsubstituted, mono- or polysubstituted with L as defined above.
Especially preferred substituents R, Rs and R1"17 in the above formulae and subformulae are selected from straight chain, branched or cyclic alkyl having from 1 to 20 C atoms, which is unsubstituted or mono- or polysubstituted by F, CI, Br or I, and wherein one or more non-adjacent CH2 groups are optionally replaced, in each case independently from one another, by -0-, -S-, -NRb-, -SiRbRc-, -CX1=CX2- or -C≡C- in such a manner that O and/or S atoms are not linked directly to one another, or denotes optionally substituted aryl or heteroaryl preferably having from 1 to 30 C-atoms, with Rb and Rc being independently of each other H or alkyl having from 1 to 12 C-atoms, and X1 and X2 being independently of each other H, F, CI or CN.
R15"17 and R" are preferably identical or different groups selected from a Ci-C4o-alkyl group, preferably Ci-C4-alkyl, most preferably methyl, ethyl, n- propyl or isopropyl, a C6-C4o-aryl group, preferably phenyl, a C6-C o- arylalkyl group, a Ci-C4o-alkoxy group, or a C6-C40-arylalkyloxy group, wherein all these groups are optionally substituted for example with one or more halogen atoms. Preferably, R15"17 and R" are each independently selected from optionally substituted
Figure imgf000028_0001
most preferably d-3-alkyl, for example isopropyl, and optionally substituted C6-io-aryl, preferably phenyl. Further preferred is a silyl group of formula - SiR15R16 wherein R15 is as defined above and R16 forms a cyclic silyl alkyl group together with the Si atom, preferably having 1 to 8 C atoms.
In one preferred embodiment all of R15"17, or all of R", are identical groups, for example identical, optionally substituted, alkyl groups, as in
triisopropylsilyl. Very preferably all of R15"17, or all of R", are identical, optionally substituted Ci-io, more preferably C1-4, most preferably Ci-3 alkyl groups. A preferred alkyl group in this case is isopropyl. Preferred groups -SiR15R16R17 and SiR"3 include, without limitation, trimethylsilyl, triethylsilyl, tripropylsilyl, dimethylethylsilyl, diethylmethylsilyl, dimethylpropylsilyl, dimethylisopropylsilyl, dipropylmethylsilyl,
diisopropylmethylsilyl, dipropylethylsilyl, diisopropylethylsilyl,
diethylisopropylsilyl, triisopropylsilyl, trimethoxysilyl, triethoxysilyl, triphenylsilyl, diphenylisopropylsilyl, diisopropylphenylsilyl,
diphenylethylsilyl, diethylphenylsilyl, diphenylmethylsilyl, triphenoxysilyl, dimethylmethoxysilyl, dimethylphenoxysilyl, methylmethoxyphenylsilyl, etc., wherein the alkyl, aryl or alkoxy group is optionally substituted. According to a preferred embodiment of the present invention the OSC material is an organic light emitting material and/or charge transporting material. The organic light emitting materials and charge transporting materials can be selected from standard materials known to the skilled person and described in the literature. Organic light emitting material according to the present application means a material which emits light having a Amax in the range from 400 to 700 nm.
Suitable phosphorescent compounds are, in particular, compounds which emit light, preferably in the visible region, on suitable excitation and in addition contain at least one atom having an atomic number greater than 20, preferably greater than 38 and less than 84, more preferably greater than 56 and less than 80. The phosphorescence emitters used are preferably compounds which contain copper, molybdenum, tungsten, rhenium, ruthenium, osmium, rhodium, iridium, palladium, platinum, silver, gold or europium, in particular compounds which contain iridium or platinum.
Particularly preferred organic phosphorescent compounds are compounds of formulae (1) to (4):
Figure imgf000029_0001
formula (1) formula (2)
Figure imgf000029_0002
formula (3) formula (4) where
DCy is, identically or differently on each occurrence, a cyclic group which contains at least one donor atom, preferably nitrogen, carbon in the form of a carbene or phosphorus, via which the cyclic group is bonded to the metal, and which may in turn carry one or more substituents R18; the groups DCy and CCy are connected to one another via a covalent bond;
CCy is, identically or differently on each occurrence, a cyclic group which contains a carbon atom via which the cyclic group is bonded to the metal and which may in turn carry one or more substituents R18; is, identically or differently on each occurrence, a monoanionic, bidentate chelating ligand, preferably a diketonate ligand; are identically or differently at each instance, and are F, CI, Br, I, N02, CN, a straight-chain, branched or cyclic alkyl or alkoxy group having from 1 to 20 carbon atoms, in which one or more nonadjacent CH2 groups may be replaced by -O-, -S-, -NR19-, -CONR19-, -CO-0-, -C=O-, -CH=CH- or -C≡C-, and in which one or more hydrogen atoms may be replaced by F, or an aryl or heteroaryl group which has from 4 to 14 carbon atoms and may be substituted by one or more nonaromatic R18 radicals, and a plurality of substituents R18, either on the same ring or on two different rings, may together in turn form a mono- or polycyclic, aliphatic or aromatic ring system; and are identically or differently at each instance, and are a straight-chain, branched or cyclic alkyl or alkoxy group having from 1 to 20 carbon atoms, in which one or more nonadjacent CH2 groups may be replaced by -0-, -S-, -CO-0-, -C=0-, -CH=CH- or -C≡C-, and in which one or more hydrogen atoms may be replaced by F, or an aryl or heteroaryl group which has from 4 to 14 carbon atoms and may be substituted by one or more nonaromatic R 8 radicals. Formation of ring systems between a plurality of radicals R means that a bridge may also be present between the groups DCy and CCy.
Furthermore, formation of ring systems between a plurality of radicals R18 means that a bridge may also be present between two or three ligands CCy-DCy or between one or two ligands CCy-DCy and the ligand A, giving a polydentate or polypodal ligand system. Examples of the emitters described above are revealed by the applications WO 00/70655, WO 01/41512, WO 02/02714, WO 02/15645, EP 1191613, EP 1191612, EP 1191614, WO 04/081017, WO 05/033244,
WO 05/042550, WO 05/113563, WO 06/008069, WO 06/061182,
WO 06/081973 and DE 102008027005. In general, all phosphorescent complexes as are used in accordance with the prior art for phosphorescent OLEDs and as are known to the person skilled in the art in the area of organic electroluminescence are suitable, and the person skilled in the art will be able to use further phosphorescent compounds without inventive step. In particular, it is known to the person skilled in the art which phosphorescent complexes emit with which emission colour.
Examples of preferred phosphorescent compounds are shown in the following table.
Figure imgf000031_0001
Figure imgf000031_0002
(3) (4) -30-
Figure imgf000032_0001
-31 -
Figure imgf000033_0001
Figure imgf000034_0001

Figure imgf000035_0001
-34-
Figure imgf000036_0001
Figure imgf000037_0001

Figure imgf000038_0001
Figure imgf000039_0001
-38-
Figure imgf000040_0001
Figure imgf000041_0001
30
35
Figure imgf000042_0001

Figure imgf000043_0001

Figure imgf000044_0001

Figure imgf000045_0001
 -44-
Figure imgf000046_0001
Figure imgf000047_0001

Figure imgf000048_0001
Figure imgf000049_0001
Figure imgf000050_0001
Figure imgf000051_0001

Figure imgf000052_0001
Figure imgf000053_0001
(139) (140)
Preferred dopants are selected from the class of the monostyrylamines, the distyrylamines, the tristyrylamines, the tetrastyrylamines, the styryl- phosphines, the styryl ethers and the arylamines. A monostyrylamine is taken to mean a compound which contains one substituted or unsubstituted styryl group and at least one, preferably aromatic, amine. A distyryl- amine is taken to mean a compound which contains two substituted or unsubstituted styryl groups and at least one, preferably aromatic, amine. A tristyrylamine is taken to mean a compound which contains three substi- tuted or unsubstituted styryl groups and at least one, preferably aromatic, amine. A tetrastyrylamine is taken to mean a compound which contains four substituted or unsubstituted styryl groups and at least one, preferably aromatic, amine. The styryl groups are particularly preferably stilbenes, which may also be further substituted. Corresponding phosphines and ethers are defined analogously to the amines. For the purposes of the present invention, an arylamine or an aromatic amine is taken to mean a compound which contains three substituted or unsubstituted aromatic or heteroaromatic ring systems bonded directly to the nitrogen. At least one of these aromatic or heteroaromatic ring systems is preferably a con- densed ring system, particularly preferably having at least 14 aromatic ring atoms. Preferred examples thereof are aromatic anthraceneamines, aromatic anthracenediamines, aromatic pyreneamines, aromatic pyrene- diamines, aromatic chryseneamines or aromatic chrysenediamines. An aromatic anthraceneamine is taken to mean a compound in which one di- arylamino group is bonded directly to an anthracene group, preferably in the 9-position. An aromatic anthracenediamine is taken to mean a com- pound in which two diarylamino groups are bonded directly to an anthracene group, preferably in the 9,10-position. Aromatic pyreneamines, pyrenediamines, chryseneamines and chrysenediamines are defined analogously thereto, where the diarylamino groups are preferably bonded to the pyrene in the 1-position or in the 1 ,6-position. Further preferred dopants are selected from indenofluoreneamines or indenofluorene- diamines, for example in accordance with WO 06/122630, benzoindeno- fluoreneamines or benzoindenofluorenediamines, for example in accordance with WO 08/006449, and dibenzoindenofluoreneamines or dibenzo- indenofluorenediamines, for example in accordance with WO 07/140847. Examples of dopants from the class of the styrylamines are substituted or unsubstituted tristilbeneamines or the dopants described in
WO 06/000388, WO 06/058737, WO 06/000389, WO 07/065549 and WO 07/115610. Preference is furthermore given to the condensed hydrocarbons disclosed in DE 102008035413.
Suitable dopants are furthermore the structures depicted in the following table, and the derivatives of these structures disclosed in JP 06/001973, WO 04/047499, WO 06/098080, WO 07/065678, US 2005/0260442 and WO 04/092111.
Figure imgf000054_0001
The proportion of the dopant in the mixture of the emitting layer is between 0.1 and 50.0 % by vol., preferably between 0.5 and 20.0 % by vol., particularly preferably between 1.0 and 10.0 % by vol. Correspondingly, the proportion of the host material is between 50.0 and 99.9 % by vol., preferably between 80.0 and 99.5 % by vol., particularly preferably between 90.0 and 99.0 % by vol.
Suitable host materials for this purpose are materials from various classes of substance. Preferred host materials are selected from the classes of the oligoarylenes (for example 2,2',7,7'-tetraphenylspirobifluorene in accordance with EP 676461 or dinaphthylanthracene), in particular the oligoarylenes containing condensed aromatic groups, the oligoarylene- vinylenes (for example DPVBi or spiro-DPVBi in accordance with
EP 676461), the polypodal metal complexes (for example in accordance with WO 04/081017), the hole-conducting compounds (for example in accordance with WO 04/058911), the electron-conducting compounds, in particular ketones, phosphine oxides, sulfoxides, etc. (for example in accordance with WO 05/084081 and WO 05/084082), the atropisomers (for example in accordance with WO 06/048268), the boronic acid derivatives (for example in accordance with WO 06/117052) or the benzanthracenes (for example in accordance with WO 08/145239).
Suitable host materials are furthermore also the benzo[c]phenanthrene compounds according to the invention which are described above. Apart from the compounds according to the invention, particularly preferred host materials are selected from the classes of the oligoarylenes containing naphthalene, anthracene, benzanthracene and/or pyrene or atropisomers of these compounds, the oligoarylenevinylenes, the ketones, the phosphine oxides and the sulfoxides. Apart from the benzo[c]phenanthrene compounds according to the invention, very particularly preferred host materials are selected from the classes of the oligoarylenes containing anthracene, benzanthracene and/or pyrene or atropisomers of these compounds. For the purposes of this invention, an oligoarylene is intended to be taken to mean a compound in which at least three aryl or arylene groups are bonded to one another. Suitable host materials are furthermore, for example, the materials depicted in the following table, and derivatives of these materials, as disclosed in WO 04/018587, WO 08/006449, US 5935721 ,
US 2005/0181232, JP 2000/273056, EP 681019, US 2004/0247937 and US 2005/0211958.
Figure imgf000056_0001
For the purposes of this invention, a hole-injection layer is a layer which is directly adjacent to the anode. For the purposes of this invention, a hole- transport layer is a layer which is located between a hole-injection layer and an emission layer. It may be preferred for them to be doped with electron-acceptor compounds, for example with F4-TCNQ or with compounds as described in EP 1476881 or EP 1596445.
Apart from the materials according to the invention, suitable charge- transport materials, as can be used in the hole-injection or hole-transport layer or in the electron-injection or electron-transport layer of the organic electroluminescent device according to the invention, are, for example, the compounds disclosed in Y. Shirota et al., Chem. Rev. 2007, 107(4), 953- 1010, or other materials as employed in these layers in accordance with the prior art.
Examples of preferred hole-transport materials which can be used in a hole-transport or hole-injection layer of the electroluminescent device according to the invention are indenofluoreneamines and derivatives (for example in accordance with WO 06/122630 or WO 06/100896), the amine derivatives as disclosed in EP 1661888, hexaazatriphenylene derivatives (for example in accordance with WO 01/049806), amine derivatives with condensed aromatics (for example in accordance with US 5,061 ,569), the amine derivatives as disclosed in WO 95/09147,
monobenzoindenofluoreneamines (for example in accordance with WO 08/006449) or dibenzoindenofluoreneamines (for example in accordance with WO 07/140847). Suitable hole-transport and hole- injection materials are furthermore derivatives of the compounds depicted above, as disclosed in JP 2001/226331 , EP 676461 , EP 650955,
WO 01/049806, US 4780536, WO 98/30071 , EP 891121 , EP 1661888, JP 2006/253445, EP 650955, WO 06/073054 and US 5061569.
Suitable hole-transport or hole-injection materials are furthermore, for example, the materials indicated in the following table.
Figure imgf000057_0001
Figure imgf000058_0001
Suitable electron-transport or electron-injection materials which can be used in the electroluminescent device according to the invention are, for example, the materials indicated in the following table. Suitable electron- transport and electron-injection materials are furthermore derivatives of the compounds depicted above, as disclosed in JP 2000/053957,
WO 03/060956, WO 04/028217 and WO 04/080975.
Figure imgf000059_0001
Suitable matrix materials for the compounds according to the invention are ketones, phosphine oxides, sulfoxides and sulfones, for example in accordance with WO 04/013080, WO 04/093207, WO 06/005627 or
DE 102008033943, triarylamines, carbazole derivatives, for example CBP
(Ν,Ν-biscarbazolyl-biphenyl) or the carbazole derivatives disclosed in
WO 05/039246, US 2005/0069729, JP 2004/288381 , EP 1205527 or
WO 08/086851 , indolocarbazole derivatives, for example in accordance with WO 07/063754 or WO 08/056746, azacarbazoles, for example in accordance with EP 1617710, EP 1617711 , EP 1731584,
JP 2005/347160, bipolar matrix materials, for example in accordance with
WO 07/137725, silanes, for example in accordance with WO 05/111172, azaboroles or boronic esters, for example in accordance with
WO 06/117052, triazine derivatives, for example in accordance with
DE 102008036982, WO 07/063754 or WO 08/056746, or zinc complexes, for example in accordance with DE 102007053771.
According to a preferred embodiment, the organic semiconducting compounds (OSC) preferably have a molecular weight of at most 5000 g/mol, particularly at most 2000 g/mol, especially at most 1500 g/mol and more preferably at most 1000 g/mol.
According to a special embodiment of the present invention, the
formulation can comprise 0.1 to 10 % by weight, preferably 0.25 to 5 % more preferably 0.5 to 4 % by weight emitting materials and/or charge transporting materials.
Preference is furthermore also given to solutions of non-conducting, electronically inert polymers (matrix polymers; inert polymeric binders) which comprise admixed low-molecular-weight, oligomeric, dendritic, linear or branched and/or polymeric organic and/or organometallic semiconductors. Preferably, the formulation may comprise 0.1 to 10 % more preferably 0.25% to 5% most preferably 0.3% to 3% by weight inert polymeric binders.
Optionally, the OSC formulation comprises one or more organic binders, preferably polymeric binders to adjust the rheological properties, as described for example in WO 2005/055248 A1 , in particular an organic binder which has a low permittivity (ε) at 1 ,000 Hz of 3.3 or less, very preferably in a proportion of binder to OSC compounds from 20:1 to 1 :20, preferably 10:1 to 1 :10, especially 5:1 to 1 :5, more preferably 1 :1 to 1 :5 by weight. Preferably, the polymeric binder comprises a weight average molecular weight in the range of 1000 to 15,000,000 g/mol, especially 1500 to 12,000,000 g/mol, and most especially 1500 to 10,000,000 g/mol.
Surprising effects can be achieved with polymers having a weight average molecular weight of at least 10,000 g/mol, preferably at least 200,000 g/mol, especially at least 300,000 g/mol and more preferably at least 500,000 g/mol. According to a very preferred aspect of the present invention, the polymers can preferably have a weight average molecular weigh of at least 1 ,000,000 g/mol and more preferably at least 2,000,000 g/mol.
The polymers being useful as inert binders can preferably have a weight average molecular weight of at most 20,000,000 g/mol, more preferably of at most 12,000,000 g/mol and most preferably at most 7,000,000 g/mol. In particular, the polymer can have a polydispersity index Mw/Mn in the range of 1.0 to 10.0, more preferably in the range of 1.01 to 5.0 and most preferably in the range of 1.02 to 3. Astonishing improvements can be achieved with perferbable polymers having a polydispersity index Mw/Mn in the range of 1.03 to 2.0, especially 1.04 to 1.5 and more preferably 1.05 to 1.2.
According to a special aspect of the present invention, the polymeric binder may have a multi modal molecular weight distribution. Preferably, the polymer may have 2, 3, 4 or more maxima in the molecular weight distribution as determinable using GPC.
The binder is selected for example from polystyrene, poly(a- methylstyrene), polyvinylcinnamate, poly(4-vinylbiphenyl) or poly(4- methylstyrene). Polymeric binders preferably comprise repeating units derived from styrene and/or olefins. Preferred polymeric binders can comprise at least 80 %, especially 90 % and more preferably 99 % by weight of repeating units derived from styrene monomers and/or olefins.
The binder may also be a semiconducting binder selected for example from poly-arylamines, polyfluorenes, polythiophenes, polyspirobifluorenes, substituted polyvinylenephenylenes, polycarbazoles or polystilbenes, or copolymers thereof.
According to a preferred embodiment of the present invention, an inert binder is a polymer having a glass transition temperature in the range of -70 to 160°C, more preferably, 0 to 150°C, especially 50 to 140°C and most preferably 70 to 130°C. The glass transition temperature can be determined by measuring the DSC of the polymer (DIN EN ISO 11357, heating rate 10°C per minute). Usually, the polymeric binder is dispersible or soluble in the solvent of the present formulation as described above and below. Preferably, the polymeric binder is soluble in the organic solvent and the solubility of the polymeric binder in the solvent is at least 1 g/l, especially at least 5 g/l and more preferably at least 10 g/l. According to a special embodiment of the present invention, the
formulation can comprise 0.05 to 10 % by weight, preferably 0.1 to 5 % more preferably 0.15 to 3 % by weight polymeric binder. Astonishing improvements can be achieved by using formulations preferably
comprising 0.2 to 1 %, more preferably 0.25 to 0.6 and most preferably 0.3 to 0.5 % % by weight polymeric binder.
Astonishing improvements can be achieved by using a high molecular weight binder at a low content in the formulation. Using such approach surprisingly efficient devices having an excellent printing quality are obtainable.
The weight ratio of the semiconducting compound to the inert binder is preferably in the range of 30:1 to 1 :30, particularly in the range of 20:1 to 1 :5 and more preferably in the range of 5:1 to 1 :1.
According to a special embodiment the polymeric binders preferably comprise repeating units derived from styrene and/or olefins. Preferred polymeric binders can comprise at least 80 %, especially 90 % and more preferably 99 % by weight of repeating units derived from styrene monomers and/or olefins.
Styrene monomers are well known in the art. These monomers include styrene, substituted styrenes with an alkyl substituent in the side chain, such as a-methylstyrene and a-ethylstyrene, substituted styrenes with an alkyl substituent on the ring such as vinyltoluene and p-methylstyrene, halogenated styrenes such as monochlorostyrenes, dichlorostyrenes, tribromostyrenes and tetrabromostyrenes. Olefins are monomers consisting of hydrogen and carbon atoms. These monomers include ethylene, propylene, butylenes, isoprene and 1 ,3- butadiene.
According to a special aspect of the present invention, the polymeric binder is polystyrene having a weight average molecular weight of preferably at least 100,000 g/mol, especially at least 200,000. especially at least 300,000 g/mol and more preferably at least 500,000 g/mol. According to a very preferred aspect of the present invention, the polystyrene can preferably have a weight average molecular weigh of at least 1 ,000,000 g/mol and more preferably at least 2,000,000 g/mol.
The polystyrene being useful as inert binders can preferably have a weight average molecular weight of at most 20,000,000 g/mol, more preferably of at most 12,000,000 g/mol and most preferably at most 7,000,000 g/mol. The formulation according to the present invention may additionally comprise one or more further components like for example surface-active compounds, lubricating agents, conductive additives, dispersing agents, hydrophobing agents, adhesive agents, flow improvers, defoaming agents, deaerators, diluents which may be reactive or non-reactive, auxiliaries, colourants, dyes or pigments, sensitizers, stabilizers, nanoparticles or inhibitors. However, these further components should not be oxidising or otherwise capable of chemically reacting with the OSC or have an electrically doping effect on the OSC. Surprising improvements can be achieved with volatile wetting agents. The term "volatile" as used above and below means that the agent can be removed from the organic semiconducting materials by evaporation, after these materials have been deposited onto a substrate of an OE device, under conditions (like temperature and/or reduced pressure) that do not significantly damage these materials or the OE device. Preferably this means that the wetting agent has a boiling point or sublimation
temperature of < 350°C, more preferably < 300°C, most preferably < 250°C, at the pressure employed, very preferably at atmospheric pressure (1013 hPa). Evaporation can also be accelerated e.g. by applying heat and/or reduced pressure. Preferably, the wetting agents are not capable of chemically reacting with the OSC compounds. In particular they are selected from compounds that do not have a permanent doping effect on the OSC material (e.g. by oxidising or otherwise chemically reacting with the OSC material). Therefore, the formulation preferably should not contain additives, like e.g. oxidants or protonic or lewis acids, which react with the OSC materials by forming ionic products. Surprising effects can be accomplished by formulations comprising volatile components having similar boiling points. Preferably, the difference of the boiling point of the wetting agent and the organic solvent is in the range of -50°C to 50°C, more preferably in the range of -30°C to 30°C and most preferably in the range of -20°C to 20°C.
Preferred wetting agents are non-aromatic compounds. With further preference the wetting agents are non-ionic compounds. Particular useful wetting agents comprise a surface tension of at most 35 mN/m, especially of at most 30 mN/m, and more preferably of at most 25 mN/m. The surface tension can be measured using a FTA (First Ten Angstrom) 125 contact angle goniometer at 25°C. Details of the method are available from First Ten Angstrom as published by Roger P. Woodward, Ph.D. "Surface Tension Measurements Using the Drop Shape Method". Preferably, the pendant drop method can be used to determine the surface tension.
According to a special aspect of the present invention, the difference of the surface tension of the organic solvent and the wetting agent is preferably at least 1 mN/m, especially at least 5 mN/m and more preferably at least 10 mN/m.
Unexpected improvements can be achieved by wetting agents comprising a molecular weight of at least 100 g/mol, especially at least 150 g/mol, preferably at least 180 g/mol and more preferably at least 200 g/mol.
Suitable and preferred wetting agents that do not oxidise or otherwise chemically react with the OSC materials are selected from the group consisting of siloxanes, alkanes, amines, alkenes, alkynes, alcohols and/or halogenated derivates of these compounds. Furthermore, fluoro ethers, fluoro esters and/or fluoro ketones can be used. More preferably, these compounds are selected from methyl siloxanes having 6 to 20 carbon atoms, especially 8 to 16 carbon atoms; C7 -C14 alkanes, C7 -C14 alkenes, C7 -C14 alkynes, alcohols having 7 to 14 carbon atoms, fluoro ethers having 7 to 14 carbon atoms, fluoro esters having 7 to 14 carbon atoms and fluoro ketones having 7 to 14 carbon atoms. Most preferred wetting agents are methyl siloxanes having 8 to 14 carbon atoms.
Useful and preferred alkanes having 7 to 14 carbon atoms include heptane, octane, nonane, decane, undecane, dodecane, tridecane, tetradecane, 3-methyl heptane, 4-ethyl heptane, 5-propyl decane, trimethyl cyclohexane and decalin.
Halogenated alkanes having 7 to 14 carbon atoms include 1-chloro heptane, 1 ,2-dichloro octane, tetrafluoro octane, decafluoro dodecane, perfluoro nonane, 1 ,1 ,1-trifluoromethyl decane, and perfluoro methyl decalin.
Useful and preferred alkenes having 7 to 14 carbon atoms include heptene, octene, nonene, 1-decene, 4-decene, undecene, dodecene, tridecene, tetradecene, 3-methyl heptene, 4-ethyl heptene, 5-propyl decene, and trimethyl cyclohexene.
Halogenated alkenes having 7 to 14 carbon atoms include 1 ,2-dichloro octene, tetrafluoro octene, decafluoro dodecene, perfluoro nonene, and 1 ,1 ,1-trifluoromethyl decene.
Useful and preferred alkynes having 7 to 14 carbon atoms include octyne, nonyne, 1-decyne, 4-decyne, dodecyne, tetradecyne, 3-methyl heptyne, 4- ethyl heptyne, 5-propyl decyne, and trimethyl cyclohexyne.
Halogenated alkynes having 7 to 14 carbon atoms include 1 ,2-dichloro octyne, tetrafluoro octyne, decafluoro dodecyne, perfluoro nonyne, and 1 ,1 ,1-trifluoromethyl decyne.
Useful and preferred alcanols having 7 to 14 carbon atoms include, heptanol, octanol, nonanol, decanol, undecanol, dodecanol, tridecanol, tetradecanol, 3-methyl heptanol, 3,5-dimethyl-1-hexyn-3-ol, 4-ethyl heptanol, 5-propyl decanol, trimethyl cyclohexanol and hydroxyl decalin. Halogenated alkanols having 7 to 14 carbon atoms include 1-chloro heptanol, 1 ,2-dichloro octanol, tetrafluoro octanol, decafluoro dodecanol, perfluoro nonanol, 1 ,1 ,1-trifluoromethyl decanol, and 2-trifluoro methyl-1- hydroxy decalin.
Useful and preferred fluoro ethers having 7 to 14 carbon atoms include 3- ethoxy-1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexane, 3- propoxy-1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexane, and 3-propoxy-1 ,1 ,1 ,2,3,4,4,5,5,5 decafluoro-2-trifluoromethyl-pentane.
Useful and preferred fluoro esters having 7 to 14 carbon atoms include 3-(1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexyl) ethanoate, and 3-(1 , 1 ,1 ,2,3,4,4,5,5,5 decafluoro-2-trifluoromethyl-pentyl) propanoate. Useful and preferred fluoro ketones having 7 to 14 carbon atoms include 3-(1 ,1 ,1 ,2,3,4,4,5,5,6,6,6 dodecafluoro-2-trifluoromethyl-hexyl) ethyl ketone, and 3-(1 ,1 ,1 , 2,3,4,4, 5,5,5 decafluoro-2-trifluoromethyl-pentyl) propyl ketone. Useful and preferred siloxanes include hexamethyl disiloxane, octamethyl trisiloxane, decamethyl tetrasiloxane, dodecamethyl pentasiloxane, and tetradecamethyl hexasiloxane.
Preferably, the formulation may comprise at most 5 % by weight, especially at most 3 % by weight of wetting additives. More preferably, the formulation comprises 0.01 to 4 % by weight, especially preferably 0.1 to 1 % by weight of wetting agent.
The formulation according to the present invention can be designed as an emulsion, dispersion or solution. Preferably, the present formulation is a solution (homogeneous mixture) comprising no considerable amounts of a second phase.
The formulation according to the present invention can be used for the preparation of organic electronic (OE) devices, for example transistors like OFETs or organic photovoltaic (OPV) devices like diodes or solar cells, or organic light emitting diodes (OLED),.
Especially preferred OE devices are OFETs. A preferred OFET according to the present invention comprises the following components:
- optionally a substrate (1),
- a gate electrode (2),
- an insulator layer comprising a dielectric material (3),
- an OSC layer (4)
- source and drain electrodes (5),
- optionally one or more protection or passivation layers (6).
Figure 1A exemplarily and schematically depicts a typical bottom gate (BG), top contact (TC) OFET device according to the present invention, comprising a substrate (1), a gate electrode (2), a layer of dielectric material (3) (also known as gate insulator layer), an OSC layer (4), and source and drain (S/D) electrodes (5), and an optional passivation or protection layer (6). The device of Figure 1A can be prepared by a process comprising the steps of depositing a gate electrode (2) on a substrate (1), depositing a dielectric layer (3) on top of the gate electrode (2) and the substrate (1), depositing an OSC layer (4) on top of the dielectric layer (3), depositing S/D electrodes (5) on top of the OSC layer (4), and optionally depositing a passivation or protection layer (6) on top of the S/D electrodes (5) and the OSC layer (4).
Figure 1 B exemplarily and schematically depicts a typical bottom gate (BG), bottom contact (BC) OFET device according to the present invention, comprising a substrate (1), a gate electrode (2), a dielectric layer (3), S/D electrodes (5), an OSC layer (4), and an optional passivation or protection layer (6).
The device of Figure 1 B can be prepared by a process comprising the steps of depositing a gate electrode (2) on a substrate (1), depositing a dielectric layer (3) on top of the gate electrode (2) and the substrate (1), depositing S/D electrodes (5) on top of the dielectric layer (3), depositing an OSC layer (4) on top of the S/D electrodes (4) and the dielectric layer (3), and optionally depositing a passivation or protection layer (6) on top of the OSC layer (4).
Figure 2 exemplarily and schematically depicts a top gate (TG) OFET device according to the present invention, comprising a substrate (1), source and drain electrodes (5), an OSC layer (4), a dielectric layer (3), and a gate electrode (2), and an optional passivation or protection layer (6).
The device of Figure 2 can be prepared by a process comprising the steps of depositing S/D electrodes (5) on a substrate (1), depositing an OSC layer (4) on top of the S/D electrodes (4) and the substrate (1), depositing a dielectric layer (3) on top of the OSC layer (4), depositing a gate electrode (2) on top of the dielectric layer (3), and optionally depositing a passivation or protection layer (6) on top of the gate electrode (2) and the dielectric layer (3). The passivation or protection layer (6) in the devices described in Figures 1A, 1 B and 2 has the purpose of protecting the OSC layer and the S/D or gate electrodes from further layers or devices that may be later provided thereon, and/or from environmental influence. The distance between the source and drain electrodes (5), as indicated by the double arrow in Figures 1A, 1 B and 2, is the channel area.
In case of formulations for use in OPV cells, the formulation preferably comprises or contains, more preferably consists essentially of, very preferably exclusively of, a p-type semiconductor and a n-type
semiconductor, or an acceptor and a donor material. A preferred material of this type is a blend or mixture of poly(3-substituted thiophene) or P3AT with a Ceo or C7o fullerene or modified C6o molecule like PCBM [(6,6)- phenyl C61-butyric acid methyl ester], as disclosed for example in
WO 94/05045 A1 , wherein preferably the ratio of P3AT to fullerene is from 2:1 to 1 :2 by weight, more preferably from 1.2:1 to 1 :1.2 by weight. Figure 3 and Figure 4 exemplarily and schematically depict typical and preferred OPV devices according to the present invention [see also Waldauf et al., Appl. Phys. Lett. 89, 233517 (2006)].
An OPV device as shown in Figure 3 preferably comprises:
- a low work function electrode (31) (for example a metal, such as
aluminum), and a high work function electrode (32) (for example ITO), one of which is transparent,
- a layer (33) (also referred to as "active layer") comprising a hole
transporting material and an electron transporting material, preferably selected from OSC materials, situated between the electrodes (31 ,32); the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p and n type semiconductor,
- an optional conducting polymer layer (34), for example comprising a blend of PEDOTPSS (poly(3,4-ethylenedioxythiophene):
poly(styrenesulfonate)), situated between the active layer (33) and the high work function electrode (32), to modify the work function of the high work function electrode to provide an ohmic contact for holes,
- an optional coating (35) (for example of LiF) on the side of the low workfunction electrode (31) facing the active layer (33), to provide an ohmic contact for electrons.
An inverted OPV device as shown in Figure 4 preferably comprises:
- a low work function electrode (41) (for example a metal, such as gold), and a high work function electrode (42) (for example ITO), one of which is transparent,
- a layer (43) (also referred to as "active layer") comprising a hole
transporting material and an electron transporting material, preferably selected from OSC materials, situated between the electrodes (41 ,42); the active layer can exist for example as a bilayer or two distinct layers or blend or mixture of p and n type semiconductor,
- an optional conducting polymer layer (44), for example comprising a blend of PEDOTPSS, situated between the active layer (43) and the low work function electrode (41) to provide an ohmic contact for electrons, - an optional coating (45) (for example of TiOx) on the side of the high workfunction electrode (42) facing the active layer (43), to provide an ohmic contact for holes.
The OPV devices of the present invent invention typically comprise a p- type (electron donor) semiconductor and an n-type (electron acceptor) semiconductor. The p-type semiconductor is for example a polymer like poly(3-alkyl-thiophene) (P3AT), preferably poly(3-hexylthiophene) (P3HT), or alternatively another selected from the groups of preferred polymeric and monomeric OSC material as listed above. The n-type semiconductor can be an inorganic material such as zinc oxide or cadmium selenide, or an organic material such as a fullerene derivate, for example (6,6)-phenyl- butyric acid methyl ester derivatized methano C6o fullerene, also known as "PCBM" or "CeoPCBM", as disclosed for example in G. Yu, J. Gao, J.C. Hummelen, F. Wudl, A.J. Heeger, Science 1995, Vol. 270, p. 1789 ff and having the structure shown below, or an structural analogous compound with e.g. a C7o fullerene group (C70PCBM), or a polymer (see for example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16, 4533).
Figure imgf000070_0001
CeoPCBM
A preferred material of this type is a blend or mixture of a polymer like P3HT or another polymer selected from the groups listed above, with a Ceo or C 0 fullerene or modified fullerene like PCBM. Preferably the ratio polymenfullerene is from 2:1 to 1 :2 by weight, more preferably from 1.2:1 to 1 :1.2 by weight, most preferably 1 :1 by weight. For the blended mixture, an optional annealing step may be necessary to optimize blend
morpohology and consequently OPV device performance. During the process of preparing an OE device, the OSC layer is deposited onto a substrate, followed by removal of the solvent together with any volatile additive(s) present, to form a film or layer. Various substrates may be used for the fabrication of OE devices, for example glass, ITO coated glass, ITO glass with pre coated layers including PEDOT, PANI etc, or plastics, plastics materials being preferred, examples including alkyd resins, allyl esters, benzocyclobutenes, butadiene-styrene, cellulose, cellulose acetate, epoxide, epoxy polymers, ethylene-chlorothfluoro ethylene, ethylene-tetra-fluoroethylene, fibre glass enhanced plastic, fluorocarbon polymers, hexafluoropropylenevinylidene- fluoride copolymer, high density polyethylene, parylene, polyamide, polyimide, polyaramid, polydimethylsiloxane, polyethersulphone, polyethylene, polyethylenenaphthalate, polyethyleneterephthalate, polyketone, polymethylmethacrylate, polypropylene, polystyrene, polysulphone, polytetrafluoroethylene, polyurethanes, polyvinylchloride, silicone rubbers, silicones, and flexible films with ITO, or other conducting layers and barrier layers e.g. Vitex film. Preferred substrate materials are polyethyleneterephthalate, polyimide, and polyethylenenaphthalate. The substrate may be any plastic material, metal or glass coated with the above materials. The substrate should preferably be homogeneous to ensure good pattern definition. The substrate may also be uniformly pre-aligned by extruding, stretching, rubbing or by photochemical techniques to induce the orientation of the organic semiconductor in order to enhance carrier mobility.
The electrodes can be deposited by liquid coating, such as spray-, dip-, web- or spin-coating, or by vacuum deposition or vapor deposition methods. Suitable electrode materials and deposition methods are known to the person skilled in the art. Suitable electrode materials include, without limitation, inorganic or organic materials, or composites of the two.
Examples for suitable conductor or electrode materials include polyaniline, polypyrrole, PEDOT or doped conjugated polymers, further dispersions or pastes of graphite or particles of metal such as Au, Ag, Cu, Al, Ni or their mixtures as well as sputter coated or evaporated metals such as Cu, Cr, Pt/Pd or metal oxides such as indium tin oxide (ITO). Organometallic precursors may also be used deposited from a liquid phase.
Preferably, the substrate on surface on which the formulation according to the present invention is applied comprises a surface energy in the range of 130 to 25 mN m"1 more preferably in the range of 115 to 30 mN m"1 determined by measuring the contact angle of at least 2 solvents, e.g. water and methylene iodide, but other solvents can be used. These are typically measured using a contact angle goniometer such as a FTA 1000, at a temperatrure of 20- 25°C (room temp and at normal atmospheric pressure.the contact angle of the 2 solvents are then combined using a variety of mathematical models, typically Owens-Wendt geometric mean or Wu's harmonic mean. Perferably, the Owens-Wendt method is used. Owens-Wendt formula
(1 + cos Θ ) y 2 V( y Dsv y D Lv) + 2 V~( y psv y p Lv)
Wu's Harmonic mean formula
(1 + cos θ ) y = 4{ y Dsv y / ( y Dsv+ y d y psv p y psv+ y p
Deposition of the OSC layer can be achieved by standard methods that are known to the skilled person and are described in the literature. Suitable and preferred deposition methods include liquid coating and printing techniques. Very preferred deposition methods include, without limitation, dip coating, spin coating, spray coating, aerosol jetting, ink jet printing, nozzle printing, gravure printing, doctor blade coating, roller printing, reverse-roller printing, flexographic printing, web printing, spray coating, dip coating, curtain coating, kiss coating, meyer bar coating, 2 roll nip fed coating, anilox coaters, knife coating or slot dye coating. Preferably, the OSC layer is applied with gravure printing, doctor blade coating, roller printing, reverse-roller printing, flexographic printing, web printing, anilox coaters. Gravure and flexographic printing and varients of these printing methods are preferred. These include but or not limited to, micro gravure, reverse gravure, offset gravure, reverse roll etc. Both web fed(roll to roll) and sheetfed in both flatbed and the more conventional 'on the round' configurations can be used. For flexo printing the anilox can be either chromed steel or ceramic, preferably ceramic. The cell etch can vary between 2 cm3/m2 to 120 cm3/m2 but most preferably between 3 cm3/m2 to 20 cm3/m2 and most preferably between 4 cm3/m2 to 18 cm3/m2, however the dried film thickness will vary on the concentration of the active material and the transfer characteristics of said formulation.
The cell configuration, ie shape, depth, cell wall linking can be adapted by a person skilled in the art to achieve an optimal printing result. For gravure printing the chromed steel is perferably used but this does not exclude other materials. The engraving requirements are approximately 50% of those for the flexographic printing because there is one less transfer process involved. The speed can vary significantly depending on the press type and configuration, for flatbed printing the print speed is typically very slow, typically 100 mm/minute or less. On roll to roll presses the speed can exceed 500 m/min. According to a special aspect, an insulator layer can be deposited on a substrate in order to achieve a special type of an OE according to the present invention. Preferably, the insulator layer is deposited by solution processing, very preferably using a solution of a dielectric material, which is optionally cross-linkable, in one or more organic solvents. Preferably the solvent used for depositing the dielectric material is orthogonal to the solvent used for depositing the OSC material, and vice versa.
When spin coating is used as deposition method, the OSC or dielectric material is spun for example between 1000 and 2000 rpm for a period of for example 30 seconds to give a layer with a typical layer thickness between 0.5 and 1.5 pm. After spin coating the film can be heated at an elevated temperature to remove all residual volatile solvents.
If a cross-linkable dielectric is used, it is preferably cross-linked after deposition by exposure to electron beam or electromagnetic (actinic) radiation, like for example X-ray, UV or visible radiation. For example, actinic radiation can be used having a wavelength of from 50 nm to 700 nm, preferably from 200 to 450 nm, most preferably from 300 to 400 nm. Suitable radiation dosages are typically in the range from 25 to 3,000 mJ/cm2. Suitable radiation sources include mercury, mercury/xenon, mercury/halogen and xenon lamps, argon or xenon laser sources, x-ray, or e-beam. The exposure to actinic radiation will induce a cross-linking reaction in the cross-linkable groups of the dielectric material in the exposed regions. It is also possible for example to use a light source having a wavelength outside the absorption band of the cross-linkable groups, and to add a radiation sensitive photosensitizer to the cross- linkable material.
Optionally the dielectric material layer is annealed after exposure to radiation, for example at a temperature from 70°C to 130°C, for example for a period of from 1 to 30 minutes, preferably from 1 to 10 minutes. The annealing step at elevated temperature can be used to complete the cross-linking reaction that was induced by the exposure of the cross- linkable groups of the dielectric material to photoradiation.
Removal of the solvent and any volatile additive(s) is preferably achieved by evaporation, for example by exposing the deposited layer to high temperature and/or reduced pressure, preferably at -50°C to 300°C, more preferably 20°C to 250°C. According to a special aspect of the present invention, the solvent(s) and any volatile additive can be evaporated under reduced pressure. Preferably either atmospheric pressure or reduced pressure the pressure for solvent evaporation ranges from 10"3 mbar to 1 bar, especially from 10"2 mbar to 100 mbar and more preferably from 0.1 mbar to 10 mbar. Moreover, the evaporation of the solvent can be preferably achieved below the boiling point of the solvent. The thickness of the dried OSC layer is preferably from 1 nm to 50 μηη, especially from 2 to 1000 nm and more preferably 3 to 500 nm. Preferred layers comprising organic light emitting materials and/or charge
transporting materials can have a thickness in the range of 2 to 150 nm.
Further to the materials and methods as described above and below, the OE device and its components can be prepared from standard materials and standard methods, which are known to the person skilled in the art and described in the literature.
It will be appreciated that variations to the foregoing embodiments of the invention can be made while still falling within the scope of the invention. Each feature disclosed in this specification, unless stated otherwise, may be replaced by alternative features serving the same, equivalent or similar purpose. Thus, unless stated otherwise, each feature disclosed is one example only of a generic series of equivalent or similar features.
All of the features disclosed in this specification may be combined in any combination, except combinations where at least some of such features and/or steps are mutually exclusive. In particular, the preferred features of the invention are applicable to all aspects of the invention and may be used in any combination. Likewise, features described in non-essential combinations may be used separately (not in combination). It will be appreciated that many of the features described above, particularly of the preferred embodiments, are inventive in their own right and not just as part of an embodiment of the present invention.
Independent protection may be sought for these features in addition to or alternative to any invention presently claimed.
Unless the context clearly indicates otherwise, as used herein plural forms of the terms herein are to be construed as including the singular form and vice versa. Throughout the description and claims of this specification, the words "comprise" and "contain" and variations of the words, for example "comprising" and "comprises", mean "including but not limited to", and are not intended to (and do not) exclude other components.
The term "polymer" includes homopolymers and copolymers, e.g.
statistical, alternating or block copolymers. In addition, the term "polymer" as used hereinafter does also include oligomers and dendrimers.
Dendrimers are typically branched macromolecular compounds consisting of a multifunctional core group onto which further branched monomers are added in a regular way giving a tree-like structure, as described e.g. in M. Fischer and F. Vogtle, Angew. Chem., Int. Ed. 1999, 38, 885.
The term "conjugated polymer" means a polymer containing in its backbone (or main chain) mainly C atoms with sp2-hybridisation, or optionally sp-hybridisation, which may also be replaced by hetero atoms, enabling interaction of one π-orbital with another across an intervening σ- bond. In the simplest case this is for example a backbone with alternating carbon-carbon (or carbon-hetero atom) single and multiple (e.g. double or triple) bonds, but does also include polymers with units like 1 ,3-phenylene. "Mainly" means in this connection that a polymer with naturally
(spontaneously) occurring defects, which may lead to interruption of the conjugation, is still regarded as a conjugated polymer. Also included in this meaning are polymers wherein the backbone comprises for example units like aryl amines, aryl phosphines and/or certain heterocycles (i.e.
conjugation via N-, 0-, P- or S-atoms) and/or metal organic complexes (i.e. conjugation via a metal atom). The term "conjugated linking group" means a group connecting two rings (usually aromatic rings) consisting of C atoms or hetero atoms with sp2-hybridisation or sp-hybridisation. See also
"lUPAC Compendium of Chemical terminology, Electronic version".
Unless stated otherwise, the molecular weight is given as the number average molecular weight Mn or as weight average molecular weight Mw, which unless stated otherwise are determined by gel permeation
chromatography (GPC) against polystyrene standards.
The degree of polymerization (n) means the number average degree of polymerization, unless stated otherwise given as n = Mn/Mu, wherein Mu is the molecular weight of the single repeating unit. The term "small molecule" means a monomeric, i.e. a non -polymeric compound. Unless stated otherwise, percentages of solids are per cent by weight ("wt. %"), percentages or ratios of liquids (like e.g. in solvent mixtures) are per cent by volume ("vol. %"), and all temperatures are given in degrees Celsius (°C). Unless stated otherwise, concentrations or proportions of mixture components, given in percentages or ppm are related to the entire formulation including the solvents.
The invention will now be described in more detail by reference to the following examples, which are illustrative only and do not limit the scope of the present invention.
All process steps described above and below can be carried out using known techniques and standard equipment which are described in prior art and are well-known to the skilled person.
Examples Example 1 (Small molecule, flexo printed, top gate)
Compound A is a mixture of the following isomers
Figure imgf000077_0001
Compound A and its preparation are disclosed in S. Subramanian, J. Anthony et al., J. Am. Chem. Soc. 2008, 130, 2706-2707 (including Supporting Information).
An OFET device was prepared as follows:
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 Compound A and 0.4 parts 350 000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts of mesitylene filtering the solution through a 0.2 μΐτι PTFE cartridge filter.
Viscosity of 2.2cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer Lisicon™ D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick. Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 5.
Example 2 (Small molecule, flexo printed, top gate)
An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.3 parts Compound A (as mentioned in Example 1) and 0.7 parts 350 000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts of mesitylene filtering the solution through a 0.2 μητι PTFE cartridge filter.
Viscosity of 2.3cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer Lisicon™ D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 6.
Example 3 (Small molecule, flexo printed, top gate) An OFET device was prepared as follows:
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.3 parts Compound A (as mentioned in Example 1) and 0.7 parts 350 000 Mw polystyrene in 58.8 parts cyclohexylbenzene and 39.2 parts of mesitylene filtering the solution through a 0.2 μηη PTFE cartridge filter. Viscosity of 1.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer Lisicon™ D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 7. Example 4 (Small molecule, gravure printed, top gate)
An OFET device was prepared as follows:
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol.
Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with a 500W argon plasma for 1 minute. The electrodes were treated with Lisicon™ M001 (available from Merck
Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min. OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 350000 Mw polystyrene in 78.4 parts cyclohexylbenzene and 19.6 parts o-xylene and filtering the solution through a 0.2 μηη PTFE cartridge filter.
Viscosity of 2.23cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then gravure printed as a wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 printer by directly contacting a 8 cm3/m2 loaded anilox running at 90 m/min speed with the PEN substrate. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer Lisicon™ D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 8.
Example 5 (Small molecule, flexo printed, bottom gate)
An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 00°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in mesitylene filtering the solution through a 0.2 μητ PTFE cartridge filter.
Viscosity of 3.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 9.
Example 6 (Small molecule, flexo printed, bottom gate)
An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min. An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 1 :1 blend filtering the solution through a 0.2 μΐη PTFE cartridge filter. Viscosity of 5.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C. The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 10. Example 7 (Polymer, flexo printed, top gate)
An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from methoxy propanol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1% polymer comprising
Figure imgf000085_0001
and a weight average molecular weight of 78,000 in mesitylene filtering the solution through a 0.2 μηη PTFE cartridge filter.
Viscosity of 6.1cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C. The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer Lisicon™ D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 11.
Example 8 (Small molecule, flexo printed, bottom gate)
An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min. An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene, filtering the solution through a 0.2 μητι PTFE cartridge filter.
Viscosity of 6.5cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 12.
Example 9 (Small molecule, gravure printed, bottom gate,
mesitylene/CHB)
Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 50 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 100°C for 10 minute, and then UV cured under UV light (306nm) for 5 minutes. Approximately 60 nm thick gold source drain electrodes were evaporated. The electrodes were treated with M001 (available from Merck Chemicals) SAM treatment by covering for 1min and then spin coating to remove excess M001 and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 parts Compund A and 0.4 parts 6000000 Mw polystyrene in cyclohexylbenzene / mesitylene (1 :1) filtering the solution through a 0.2 μπι PTFE cartridge filter.
Viscosity of 5.6cP as measured using an AR G-2 rheometer ex TA
Instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed using a CP 90-100-13 Sauerressig lab proofer. The gravure cylinder had many cell depths in order to achieve different volumes. The Anilox was 6.8 ml/m2. The doctor blade was put into contact with the gravure cylinder, the formulation was placed in the nip between the doctor blade and the gravure cylinder and then rotated by hand. The print head was then slowly pulled over the substrate. The printed OSC layer was then annealed (forced air) at 70°C for 4 minutes. The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 13.
Example 10 (Small molecule, gravure printed, top gate)
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with a 1000W oxygen plasma for 1 minute. The electrodes were treated with M001 (available from Merck Chemicals) SAM treatment by depositing a film and leaving for 1 minute and then spinning - off excess and evaporating the excess off on a hot plate at 100°C for 1 min. An OSC formulation was prepared by dissolving of 1.6 parts Compund A and 0.4 parts 6000000 Mw polystyrene in cyclohexylbenzene / mesitylene (1 :1) filtering the solution through a 0.2 μηι PTFE cartridge filter.
Viscosity of 5.6cP as measured using an AR G-2 rheometer ex TA
Instruments. The viscosity was measured over a shear rate range of 10 sec*1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed using a CP 90-100-13 Sauerressig lab proofer. The gravure cylinder had many cell depths in order to achieve different volumes. The doctor blade was put into contact with the gravure cylinder, the formulation was placed in the nip between the doctor blade and the gravure cylinder and then rotated by hand. The print head was then slowly pulled over the substrate. The printed OSC layer was then annealed at 70°C for 4 minutes.
A dielectric layer of fluoro-polymer D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 70°C for 3 minutes and then 100 C for 1 minute, to give a dry dielectric film of approximately 1 micron thick.
Finally a 50 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 14.
Example 11 (Small molecule, flexo printed, top gate, in
dimethoxytoluene)
An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min. An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts PTAA in dimethoxytoluene filtering the solution through a 0.2 μΐη PTFE cartridge filter.
Viscosity of 5.0cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec-1 to 1000 sec-1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes. A dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick. Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic is depicted in Figure 15a and the linear and saturation mobility are depicted in Figure 15b.
Example 12 (Small molecule, flexo printed, top gate, in isochroman)
An OFET device was prepared as follows:
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts polvtriarylamine (PTAA) in isochroman 95 parts and 1-methy naphthalene 3 parts filtering the solution through a 0.2 μητι PTFE cartridge filter.
Viscosity of 5.3cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec-1 to 1000 sec-1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick. Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 16.
Example 13 (Small molecule, flexo printed, top gate, in tetralin)
An OFET device was prepared as follows: Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.0 parts Compound A (as mentioned in Example 1) and 1.0 parts PTAA in tetralin filtering the solution through a 0.2 μιη PTFE cartridge filter.
Viscosity of 2.9cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec-1 to 1000 sec-1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic is depicted in Figure 17a and the linear and saturation mobility are depicted in Figure 17b.
Example 14 (Small molecule, flexo printed, top gate, butyl phenyl ether)
An OFET device was prepared as follows:
Teonex Q65FA film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 2 minutes and then rinsed with methanol. Approximately 60 nm thick gold source drain electrodes were evaporated with a parallel plate geometry of 20 micron wide by 1000 micron long. The substrate was cleaned with plasma ozone for 1 minutes. The electrodes were treated with LisiconTM M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts Poly (alpha)methylstyrene having a weight average molecular weight below 10,000 g/mol in butyl phenyl ether filtering the solution through a 0.2 μηι PTFE cartridge filter. Viscosity of 1.6cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec-1 to 1000 sec-1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
A dielectric layer of fluoro-polymer LisiconTM D139 (9% solids available from Merck Chemicals) was spun on top of the OSC layer on the device and annealed at 100°C for 2 minutes to give a dry dielectric film of approximately 1 micron thick.
Finally a 40 nm thick gold gate electrode array of evaporated on top of the dielectric layer in such a way that it covered the existing source drain electrode structures.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 18.
Example 15 (Small molecule, flexo printed, bottom gate)
An OFET device was prepared as follows: Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with I PA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.4 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 60/40 blend filtering the solution through a 0.2 μηη PTFE cartridge filter.
Viscosity of 8cP as measured using an AR G-2 rheometer ex TA
instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes.
The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 19.
Example 16 (Small molecule, flexo printed, bottom gate) An OFET device was prepared as follows:
Teonex Q65FA (PEN) film (available from DuPont Teijin Flims) was washed in an ultrasonic methanol bath for 3 minutes and then rinsed with methanol. Approximately 40 nm thick gold gate electrode were evaporated on top of the PEN substrate. A dielectric layer of D206 available (from Merck Chemicals) was spun on top of the gold gate electrode, at a spin speed of 1500rpm for 30 seconds; annealed at 120°C for 1 minute, and then UV cured under UV light (302nm) for 5 minutes. Approximately 40 nm thick gold source drain electrodes were evaporated. The electrodes were treated with Lisicon™ M001 (available from Merck Chemicals) SAM treatment by spin coating from isopropyl alcohol and then rinsed with IPA and spin dried evaporating the excess off on a hot plate at 100°C for 1 min.
An OSC formulation was prepared by dissolving of 1.6 parts Compound A (as mentioned in Example 1) and 0.5 parts 6 000 000 Mw polystyrene in cyclohexylbenzene/mesitylene in a 60:40 blend filtering the solution through a 0.2 μητι PTFE cartridge filter.
Viscosity of 10 cP as measured using an AR G-2 rheometer ex TA instruments. The viscosity was measured over a shear rate range of 10 sec"1 to 1000 sec"1 viscosity extrapolated using a Newtonian fit equation, all measurements taken at 25°C.
The OSC formulation was then printed as a 5 X 5 cm wide area block on the array of source drain electrodes on PEN film as described above using a RK Flexiproof 100 flexographic printing with a 8 cm3/m2 loaded anilox and a Cyrel HiQS flexo mat running at 80 m/min speed. The printed OSC layer was then annealed at 70°C for 3 minutes. The transfer and stress measurements of the OFET device was performed by using Keithley 4200. The transistor transfer characteristic and the linear and saturation mobility are depicted in Figure 20.

Claims

Patent Claims
Formulation comprising one or more organic semiconducting compounds (OSC), and one or more organic solvents, characterized in that said formulation comprises a viscosity at 25°C of less than 15 mPas and the boiling point of the solvent is at most 400°C.
Formulation according to claim 1 , characterized in that said
formulation comprises a viscosity at 25°C in the range of 0.5 to 9.5 mPas.
Formulation according to claim 1 or 2, characterized in that said formulation is a solution.
Formulation according to one or more of claims 1 to 3, characterized in that said formulation comprises a surface tension in the range of 22 mN/m to 50 mN/m.
Formulation according to one or more of claims 1 to 4, characterized in that said organic solvent comprises Hansen Solubility parameters of Hd in the range of 17.0 to 23.2 MPa0 5, Hp in the range of 0.2 to 12.5 MPa0 5 and Hh in the range of 0.0 to 20.0 MPa0 5.
Formulation according to claim 5, characterized in that said organic solvent comprises Hansen Solubility parameters of Hd in the range of 17.0 to 23.2 MPa0 5, Hp in the range of 0.2 to 10.5 MPa0 5 and Hh in the range of 0.0 to 5.0 MPa0 5
Formulation according to one or more of claims 1 to 6, characterized in that said organic solvent comprises one or more of an aromatic and/or heteroaromatic compound.
Formulation according to claim 7, characterized in that said organic solvent comprises of one or more aromatic hydrocarbon compound. Formulation according to claim 8, characterized in that said aromatic hydrocarbon compound comprises a cycloalkyl group.
Formulation according to claim 8, characterized in that said aromatic hydrocarbon compound comprises an alkyl group having 1 to 8 carbon atoms.
11. Formulation according to one or more of claims 1 to 10, characterized in that said organic solvent or solvent blend is a mixture of
hydrocarbon aromatic compounds.
12. Formulation according to one or more of claims 1 to 11 , characterized in that said organic solvent comprises a boiling point of at least 130°C.
13. Formulation according to one or more of claims 1 to 12, characterized in that said organic solvent is a mixture of compounds having different boiling points and the boiling point of the compound with the lowest boiling point is at least 10°C below the boiling point of the compound with the highest boiling point.
14. Formulation according to one or more of claims 1 to 13, characterized in that said organic solvent is a mixture of compounds having different boiling points and the boiling point of the compound with the lowest boiling point is at most 100°C below the boiling point of the compound with the highest boiling point.
15. Formulation according to one or more of claims 1 to 14, characterized in that said formulation comprises at least 80 % by weight of said organic solvents.
16. Formulation according to one or more of claims 1 to 15, characterized in that said solvent comprises a partition ratio log P of at least 1.5. - 17. Formulation according to one or more of claims 1 to 16, characterized in that said formulation comprises at least one inert binder. Formulation according to claim 17, characterized in that said inert binder is a polymer comprising repeating units derived from styrene monomers and/or olefins.
19. Formulation according to claim 17 or 18, characterized in that said inert binder is a polymer comprising at least 80 % by weight of repeating units derived from styrene monomers and/or olefins. 20. Formulation according to one or more of claims 17 to 19,
characterized in that said inert binder is a polymer having a weight average molecular weight of at least 200,000 g/mol. 21. Formulation according to one or more of claims 1 to 20, characterized in that the organic semiconducting compound is an organic light emitting material and/or charge transporting material.
22. Formulation according to one or more of claims 1 to 21 , characterized in that the organic semiconducting compound has a molecular weight of 5000 g/mol or less.
23. Formulation according to one or more of claims 1 to 22, characterized in that the organic semiconducting compound is a compound selected from the following formulae
P1
Figure imgf000099_0001
-98-
Figure imgf000100_0001
Figure imgf000100_0002
is an integer >1 , preferably from 10 to 1 ,000, on each occurrence identically or differently denotes H, F, CI, Br, I, CN, a straight-chain, branched or cyclic alkyl group having from 1 to 40 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR°=CR° or C≡C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups Rs, and wherein one or more groups R may also form a mono- or polycyclic aliphatic or aromatic ring system with one another and/or with the ring to which they are attached, on each occurrence identically or differently denotes F, CI, Br, I, CN, Sn(R00)3, Si(R00)3 or B(R00)2 a straight-chain, branched or cyclic alkyl group having from 1 to 25 C atoms, in which one or more C atoms are optionally replaced by O, S, O-CO, CO-O, O-CO-O, CR°=CR°, C≡C such that O- and/or S-atoms are not linked directly to each other, and in which one or more H atoms are optionally replaced by F, CI, Br, I or CN, or Rs denotes an aryl or heteroaryl group having from 4 to 20 ring atoms that is unsubstituted or substituted by one or more non-aromatic groups Rs, and wherein one or more groups Rs may also form a ring system with one another and/or with R, on each occurrence identically or differently denotes H, F, CI, CN, alkyl having from 1 to 12 C atoms or aryl or heteroaryl having from 4 to 10 ring atoms, on each occurrence identically or differently denotes H or an aliphatic or aromatic hydrocarbon group having from 1 to 20 C atoms, wherein two groups R00 may also form a ring together with the hetero atom (Sn, Si or B) to which they are attached, r is 0, 1, 2, 3 or 4, s is 0, 1 , 2, 3, 4 or 5.
Formulation according to one or more of claims 1 to 22, characterized in that the organic semiconducting compound is a compound of the following formula
Figure imgf000102_0001
wherein R1, R2, R3, R4,R7, R8, R9, R10, R15, R16, R17 each independently are the same or different and each independently represents: H; an optionally substituted CrC40 carbyl or hydrocarbyl group; an optionally substituted C C4o alkoxy group; an optionally substituted C6-C4o aryloxy group; an optionally substituted C7-C40 alkylaryloxy group; an optionally substituted C2-C 0 alkoxycarbonyl group; an optionally substituted C7-C 0 aryloxycarbonyl group; a cyano group (-CN); a carbamoyl group (-C(=O)NH2); a haloformyl group (-C(=O)-X, wherein X represents a halogen atom); a formyl group (-C(=O)-H); an isocyano group; an isocyanate group; a thiocyanate group or a thioisocyanate group; an optionally substituted amino group; a hydroxy group; a nitro group; a CF3 group; a halo group (CI, Br, F); or an optionally substituted silyl group; and A represents Silicon or Germanium; and wherein independently each pair of R1 and R2, R2 and R3, R3 and R4, R7 and R8, R8 and R9, R9 and R10, R15 and R16, and R 6 and R17 is optionally cross-bridged with each other to form a C4-C40 saturated or unsaturated ring, which saturated or unsaturated ring is optionally intervened by an oxygen atom, a sulphur atom or a group of the formula -N(Ra)-, wherein Ra is a hydrogen atom or a
hydrocarbon group, or is optionally substituted; and wherein one or more of the carbon atoms of the polyacene skeleton is optionally substituted by a heteratom selected from N, P, As, O, S, Se and Te.
Formulation according to one or more of claims 1 to 22, characterized in that the organic semiconducting compound is a compound of the following formula
Figure imgf000103_0001
wherein one of Y1 and Y2 denotes -CH= or =CH- and the other denotes -X-, one of Y3 and Y4 denotes -CH= or =CH- and the other denotes -X-, is -0-, -S-, -Se- or -NR'"-,
R' is H, F, CI, Br, I, CN, straight-chain or branched alkyl or alkoxy that have 1 to 20 C-atoms and are optionally fluorinated or perfluorinated, optionally fluorinated or perfluorinated aryl having 6 to 30 C-atoms, or CO2R"", with R"" being H, optionally fluorinated alkyl having 1 to 20 C-atoms or optionally fluorinated aryl having 2 to 30 C-atoms,
R" is, in case of multiple occurrence independently of one another, cyclic, straight-chain or branched alkyl or alkoxy that have 1 to 20, preferably 1 to 8 C-atoms, or aryl having 2-30 C-atoms, all of which are optionally fluorinated or perfluorinated,
R'" is H or cyclic, straight-chain or branched alkyl with 1 to 10 C- atoms, m is 0 or 1 , is 0 or 1.
Formulation according to one or more of claims 1 to 22, characterized in that organic semiconducting compound is an organic
phosphoresecent compound which emits light and in addition contains at least one atom having an atomic number greater than 38.
Formulation according to claim 26, characterized in that the phosphorescent compounds are compounds of formulae (1) to (4)
Figure imgf000104_0001
formula (1) formula (2)
Figure imgf000104_0002
formula (3) formula (4)
where DCy is, identically or differently on each occurrence, a cyclic group which contains at least one donor atom, preferably nitrogen, carbon in the form of a carbene or phosphorus, via which the cyclic group is bonded to the metal, and which may in turn carry one or more substituents R18; the groups DCy and CCy are connected to one another via a covalent bond;
CCy is, identically or differently on each occurrence, a cyclic group which contains a carbon atom via which the cyclic group is bonded to the metal and which may in turn carry one or more substituents R18;
A is, identically or differently on each occurrence, a monoanionic, bidentate chelating ligand, preferably a diketonate ligand;
R18 are identically or differently at each instance, and are F, CI, Br, I, NO2, CN, a straight-chain, branched or cyclic alkyl or alkoxy group having from 1 to 20 carbon atoms, in which one or more nonadjacent CH2 groups may be replaced by -O-, -S-, -NR19-, -CONR 9-, -CO-O-, -C=O-, -CH=CH- or -C≡C-, and in which one or more hydrogen atoms may be replaced by F, or an aryl or heteroaryl group which has from 4 to 14 carbon atoms and may be substituted by one or more nonaromatic R 8 radicals, and a plurality of substituents R18, either on the same ring or on the two different rings, may together in turn form a mono- or polycyclic, aliphatic or aromatic ring system; and
R19 are identically or differently at each instance, and are a straight- chain, branched or cyclic alkyl or alkoxy group having from 1 to 20 carbon atoms, in which one or more nonadjacent CH2 groups may be replaced by -0-, -S-, -CO-O-, -C=O-, -CH=CH- or -C≡C-, and in which one or more hydrogen atoms may be replaced by F, or an aryl or heteroaryl group which has from 4 to 14 carbon
18 atoms and may be substituted by one or more nonaromatic R radicals.
28. Formulation according to one or more of claims 1 to 27, characterized in that the formulation comprises a host material.
29. Formulation according to one or more of claims 1 to 28, characterized in that the formulation comprises 0.1 to 5 % by weight organic semiconducting compounds.
30. Formulation according to one or more of claims 17 to 29,
characterized in that the weight ratio of said semiconducting compound to said inert binder is in the range of 5:1 to 1 :1.
31. Formulation according to one or more of claims 1 to 30, characterized in that the formulation comprises at least one wetting agent. 32. Formulation according to claim 31, characterized in that said wetting agent is volatile and is not capable of chemically reacting with said semiconducting compound.
33. Use of a formulation according to one or more of claims 1 to 32 as coating or printing ink for the preparation of OE devices.
34. Process of preparing an organic electronic (OE) device, comprising the steps of
a) depositing the formulation according to one or more of claims 1 to 32 onto a substrate to form a film or layer,
b) removing the solvent(s).
35. Process according to claim 34, characterized in that the formulation according to one of the claims 1 to 32 is applied by gravure printing, doctor blade coating, roller printing, reverse-roller printing,
flexographic printing, web printing.
36. Process according to claim 34 or 35, characterized in that the cell etch of the printing device is in the range of 4 cm3/m2 to 18 cm3/m2.
37. Process according to one or more of claims 34 to 36, characterized in that the print speed is 100 m/minute or less.
Process according to claim 34 or 35, characterized in that the surface on which the formulation according to one or more of claims 1 to 32 is applied comprises a surface energy in the range of 25 to 130 mN m"1.
Process according to one or more of claims 34 to 38, characterized in that the evaporation of the solvent is achieved below the boiling point of the solvent.
OE device prepared from a formulation according to one or more of claims 1 to 32 or by a process according to one or more of claims 34 to 39.
41. OE device according to claim 40, characterized in that it is an organic light emitting diode (OLED), an organic field effect transistor (OFET) or an organic photovoltaic (OPV) device.
42. OE device according to claim 40, characterized in that it comprises a top gate design.
43. OE device according to claim 40, characterized in that it comprises a bottom gate design.
PCT/EP2011/002128 2010-05-27 2011-04-28 Formulation and method for preparation of organic electronic devices Ceased WO2011147523A1 (en)

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CN201180025340.4A CN102906216B (en) 2010-05-27 2011-04-28 Compositions and methods of producing organic electronic devices
RU2012156386/05A RU2012156386A (en) 2010-05-27 2011-04-28 COMPOSITION AND METHOD FOR PRODUCING ORGANIC ELECTRONIC DEVICES
US13/700,298 US9206352B2 (en) 2010-05-27 2011-04-28 Formulation and method for preparation of organic electronic devices
KR1020127033898A KR101943110B1 (en) 2010-05-27 2011-04-28 Formulation and method for preparation of organic electronic devices
JP2013511565A JP6309269B2 (en) 2010-05-27 2011-04-28 Formulations and methods for preparing organic electronic devices
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