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WO2011141224A1 - Capteur à tension constante - Google Patents

Capteur à tension constante Download PDF

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Publication number
WO2011141224A1
WO2011141224A1 PCT/EP2011/054934 EP2011054934W WO2011141224A1 WO 2011141224 A1 WO2011141224 A1 WO 2011141224A1 EP 2011054934 W EP2011054934 W EP 2011054934W WO 2011141224 A1 WO2011141224 A1 WO 2011141224A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
capacitor
target
sensor electrode
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/054934
Other languages
German (de)
English (en)
Inventor
Martin KÖRDEL
Fatih Alatas
Anton Schick
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of WO2011141224A1 publication Critical patent/WO2011141224A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
    • G01R29/12—Measuring electrostatic fields or voltage-potential
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R35/00—Testing or calibrating of apparatus covered by the other groups of this subclass
    • G01R35/005—Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references

Definitions

  • Constant-voltage sensor The present invention relates to a device and a method for contactless detection of a constant electric potential of a target electrode according to the upper ⁇ concepts of the main claim and the independent claim.
  • the charge generated by the capacitive coupling Umladestrom can be used for non-contact measurement of the potential of an electrode via a capacitively coupled sensor electrode, which is held permanently at a constant potential during a measuring time. This is generally described by the following equation 1:
  • C sévir e lec from the sensor electrode and considered one electrode formed capacitance and the prevailing between Sen ⁇ sorelektrode and considered one electrode.
  • the capacitance C sévir e lec i st merely by the BETEI ⁇ -favored materials, especially dielectrics, the geomet ⁇ generic parameters and eventually one of the electrode arrangement of neighboring electrodes determined, but not the ruling of the electrode voltages.
  • DE 10 2005 022 884 A1 discloses a method for contactless inspection of a printed conductor structure formed on a flat carrier, in which an electrode is positioned at a predetermined distance relative to the printed conductor structure by means of a positioning device and an electrical voltage is applied between the electrode and the printed conductor structure becomes.
  • the electrode is moved in a plane parallel to the support, wherein a current flow is measured by an electrode connected with the electrical lead, at least on selected from ⁇ positions.
  • the strength of the current flow causes the local voltage state in detected a subregion of the conductor track structure. This stress state can be used to determine the quality of the trace structure.
  • defects such as short circuits, constrictions, or wire breaks caused by geometric changes in the wiring pattern can be detected.
  • WO 2008/058949 A2 discloses a sensor element for inspec ⁇ tion of a groove formed on a flat carrier strip conductor structure.
  • the sensor element comprises a substrate wel ⁇ ches is mechanically structured so that it has a erha ⁇ enclosed upper portion and a recessed lower portion of the small upper section and the recessed un ⁇ tere area are connected by a preferably step-shaped transition region.
  • the sensor element further comprises a plurality of sensor electrodes formed on the planar upper portion, and a plurality of connection lines for electrically contacting the plurality of sensor electrodes. In this case, each sensor electrode is assigned a connecting line which extends from the respective sensor electrode to the recessed lower area.
  • a device and a method for inspecting a printed conductor structure are also described. In addition, a manufacturing method for an above-mentioned sensor element is specified.
  • the Messvor ⁇ direction has a holding element and an Air bearing element which is attached to the holding element, which is designed such that, together with the ⁇ to inspect the surface of the substrate, an air bearing can be formed, wel ⁇ ches having an elasticity, so that the air bearing ele ⁇ ment is adaptable to irregularities in the surface.
  • the measuring device further comprises at least one sensor, which is attached to the air-bearing element and which is adapted to detect the surface of the substrate. Due to the flexibility of the air bearing element of the at least one sensor even with a ripple of the surface to be inspected always be moved in a constant measuring distance relative to the surface.
  • a surface inspection measuring method is also described in which the measuring device described is moved relative to the surface.
  • An indirect non-contact measurement of an absolute Elect ⁇ clearing voltage is carried out a conventional manner by means of use of electro-optical effects.
  • a well-known provider is called Photon Dynamics. An influence of the introduced additional capacity on the voltage to be measured but it neither considered nor erfor ⁇ derliche corrective action if necessary described.
  • charge amplifier units or any circuit corresponding to a charge amplifier in order to measure constant voltages indirectly via a current flow caused by a capacitive coupling and thus a charging of feedback capacitors.
  • conventional charge amplifiers can not be used for charge quantities below 1 pC. Quasi-static processes are in any case only using further compensations. Onsschalitch for suppression of quiescent currents due to the operational amplifier used permanently measurable.
  • a reset of an amplifier namely by setting a charge of the feedback capacitor to a known value.
  • a comparable reset is also necessary in a measurement of influencing a current flow of a field-effect transistor by coupling the gate electrode of the transistor with a sensor electrode.
  • a reset takes place here to a fixed potential.
  • the reset is required for field effect transistors regardless of the type.
  • such a conventional measuring principle is based on a passive sensor electrode at floating potential.
  • ACCORDING of the present application includes a sensor electrode at a constant electric potential which is not floated, so ⁇ that the just-described conventional measurement principle is not applicable.
  • a further possibility is a use of a so-called “CCD fill-and-spill” principle, as is for example a so-called ⁇ “potential equilibration method” process for conversion of the capacitively coupled voltage into a proportional amount of charge.
  • the sensor electrode is at floating potential.
  • the object is achieved by a device according to the main claim and a method according to the independent claim.
  • a device for contactless detection of a constant electrical potential of a target electrode comprising the following: a sensor having a constant electrical potential sensor electrode which is capacitively coupled to the target ⁇ electrode; a measuring device for detecting a current flow of a recharging current by at least one ⁇ connected to the sensor electrode electrical Lei ⁇ tion; means for changing a length of a path of a condensate sator from the sensor electrode and the Zielelekt ⁇ rode capacitor formed.
  • a method of non-contact detection of a constant electrical potential of a target electrode comprising the steps of: capacitively coupling a sensor electrode having a constant electrical potential to the target electrode; by means of a measuring device He ⁇ capture a current flow of a recharging by at least one connected to the sensor electrode electrical line; by means of a device for changing a length of a capacitor circuit of a capacitor formed from the sensor electrode and the target electrode ⁇ .
  • a change of a length of a path of a condensate ⁇ sator from considered one target electrode and the sensor electrode ⁇ capacitor formed is used.
  • the change in length, which may also be referred to as modulation, of the capacitor path can be effected, for example, by a movement of the sensor electrode in the vertical direction.
  • a movement in the horizontal direction does not lead to a change in the capacitance as long as there is a projection of the sensor electrode onto the target electrode under consideration in a restricted area in its surface and the sensor electrode has a corresponding shielding.
  • Modulation according to the invention a capacitor route Made possible, through a measurement of voltage changes addition, a non-contact direct measurement of absolute potentials on electrodes using a capacitively coupled sensor electrode which is provided a ⁇ on durable constant potential.
  • a device according to the invention and a method according to the invention take into account a first case in which a potential at the considered target electrode results from a connection to a voltage source or in a second case from a charge amount stored on the target electrode and capacitive couplings to neighboring electrodes including the sensor electrode at defined potentials ,
  • the sensor electrode relative to the target electrode in a predetermined Electrode distance can be easily positioned by means of a positioning device.
  • a corresponding sensor holder can be guided at a constant distance over a substrate, as disclosed, for example, the aforementioned DE 10 2006 054 088 Al.
  • a processing device for determining the potential of the target electrode by means of the detected recharging current can be provided.
  • This embodiment takes into account the first and the second case.
  • equation 2 applies to the charge-reversal current.
  • the charging current can be governed by equation 4 described in connection with FIG.
  • the second case can be considered that the potential of the target electrode is not fixed by means of a voltage source he ⁇ testifies but floating as a result of data stored on the Zielelekt ⁇ rode charge amount, and as a result of coupling capacitances to defined electrical potentials having After ⁇ barelektroden the target electrode.
  • a measurement with the sensor electrode causes the potential of the target electrode to be determined to be too small compared to the original value.
  • the processing device for calculating the potential of the target electrode can use a correction factor calculated from a ratio of the capacitance of the capacitor to the sum of all coupling capacitances including the capacitance of the capacitor. An influence on a potential of a considered target electrode by a sensor electrode can thus be easily taken into account .
  • a device for increasing the potential of the sensor electrode in the form of a voltage jump may be a device for detecting a voltage recoil resulting from the voltage jump at the target electrode and the processing processing device for calculating the correction factor from a ratio of a magnitude of the voltage recoil to ei ⁇ ner size of the voltage jump to be provided.
  • a device for increasing the potential of the sensor electrode in the form of a voltage jump may be a device for detecting a voltage recoil resulting from the voltage jump at the target electrode and the processing processing device for calculating the correction factor from a ratio of a magnitude of the voltage recoil to ei ⁇ ner size of the voltage jump to be provided.
  • a device for simulating an arrangement comprising all electrodes for determining respective correction factors as a function of respective target electrodes on the arrangement may be provided.
  • necessary correction factors are generated particularly advantageously by means of a finite element simulation of a respective electrode arrangement and its specific evaluation. It may be a measurement of a voltage of a floating target electrode due to an addition of results of a suitable simulation of a
  • Electrode assembly such as is an AMLCD substrate, are possible without systematic errors.
  • the resulting ⁇ nisse the simulation can be stored in a table called, for example, as correction factors and off during a measurement.
  • the acquisition of the relevant correction factors is carried out regardless of the number of electrodes of the examined arrangement in each case in only one calculation step.
  • the relevant correction factors is carried out regardless of the number of electrodes of the examined arrangement in each case in only one calculation step.
  • Means for changing the length of the capacitor section comprise a vibratory element for receiving the sensor electrode, wherein the oscillatory element can be excited via mechanical or electromagnetic forces ⁇ to vibrate.
  • the device for changing the length of the capacitor section may have a piezoelectric element which is connected to the sensor electrode can be connected.
  • a piezoelectric element which is connected to the sensor electrode can be connected.
  • This embodiment enables a harmonic change in the length of the capacitor path as a result of a combination or connection of the sensor electrode to a piezoelectric element.
  • Such a piezoelectric element is advantageously suitable for effecting a harmonic oscillation with a constant frequency.
  • a geometry of the sensor electrode and optionally its suspension thereby determine the type of piezoelectric element, which may be, for example, a Di ⁇ ckenschwinger or a longitudinal oscillator.
  • the use of piezostacks additionally allows Abstandvariatio ⁇ nen in the range of several micrometers to millimeters.
  • a required in the particular application stroke or amplitude, in particular in the micrometer range, and the oscillation frequency erfor ⁇ derliche determine the characteristics of the required piezo element.
  • the device for changing the length of the capacitor path can be designed to move the target electrode.
  • a required to measure during a measurement time constant voltage ⁇ n ⁇ alteration of the length of the capacitor section can be carried out at a stationary sensor electrode as well as by means of a movement of the target electrode under consideration.
  • Particularly advantageous is the use of vibration tables on which substrates to be examined can be stored.
  • a periodic movement with a fixed frequency If a movement is of a specific periodic or harmonic nature, a periodic or harmonic recharging current I proportional to the voltage can result according to equation 2.
  • non-periodic or non-harmonic movement of a sensor electrode are executed, for example, may be determined a movement of the ⁇ art that this causes a constant recharging current to I.
  • the sensor electrode can be mounted air-bearing on the positioning device such that the change in the length of the Kon ⁇ densatorumble is executable. If the capacity generated
  • a frequency spectrum of the signal of the recharging current in the harmonic case is composed solely of multiples of the exciting frequency, the stimulating frequency acts most strongly.
  • Other conditions under which the analytical solution can be used are a small distance of the electrodes in comparison to their extent and the restriction of the gap width between the sensor electrode and the surrounding shielding to a value smaller than the length of the capacitor gap between the sensor electrode and Zielelektro ⁇ de. High accuracy is achieved when the shield overlaps the sensor area five times the distance in all directions.
  • An extension of the considered target electrode should be greater than or equal to the extent of the shielding.
  • Sensor area amount to one fifth of a length of the capacitor gap between the sensor electrode and the target electrode.
  • the sensor electrode can be placed in a permanently adhere ⁇ oscillation state. From the speed and the substrate structure, a time measurement window can result for a corresponding sensor electrode by fulfilling the abovementioned conditions for the application of the analytical solutions.
  • a bandpass filter tuned to an excitation frequency of the change in the length of the capacitor path can be provided for filtering a measurement signal obtained by measuring the potential of the target electrode. According to this embodiment, noise suppression at a measurement signal change with the frequency of the excitation or a defined frequency can be effectively performed.
  • a linear electrical network may be provided for detecting the current flow of the charge-reversal current.
  • a possible use of a linear electrical network for detecting the measurement signal is advantageous in comparison to a conventional voltage measurement by means of electro-optical effects in that the use of difficult-to-control non-linear effects can be avoided.
  • a temporal change in the capacitance of the capacitor can be a non-linear function of the excitation, this advantageously causes higher voltage amplitudes, but the measurement signal is always directly proportional to the ⁇ lying voltage.
  • an electrical resistor connected in parallel with a capacitor of a charge amplifier circuit can be provided to compensate for quiescent currents and offset voltages. Since a stationary voltage signal is obtained in a dynamic measurement of the present invention, an electrical resistor having a feedback circuit generally Erwei ⁇ tert be connected parallel to a capacitor of a charge amplifier circuit. This resistor causes a compensation of all interference of an amplifier as in ⁇ causes, for example, quiescent currents or offset voltages. Such an electrical resistance is not possible in a measurement of stationary signals from a charge amplifier circuit.
  • Figure 1 is an equivalent circuit diagram of a first embodiment ⁇ example of a device according to the invention
  • Figure 2 shows a second embodiment of an inventions ⁇ to the invention device
  • FIG. 3 shows an exemplary embodiment of a method according to the invention.
  • the device comprises the following facilities: a positioning device 2 for positioning a a constant electrical potential having sensor electrode 3 relative to the target electrode 1 in a Budapest ⁇ voted electrode gap for capacitive coupling of the sensor electrode 3 with the target electrode 1; a measuring device 5 for detecting a current flow of a recharging current I through at least one connected to the sensor electrode 3 electrical see line 7; a device 9 for mechanical modulation of a capacitor section 11 a of the sensor electric ⁇ en 3 and the target electrode 1 formed capacitor 13.
  • Figure 1 shows a processing device 15 for calculating the potential of the target electrode 1 by means of ER- summarized reversal current I.
  • Figure 1 shows the above genann ⁇ th second case, in which the potential of the target electrode 1 having means of data stored on the target electrode 1 charge ⁇ quantity and by means of coupling capacitors 17 to defined electrical ⁇ specific potentials neighboring electrodes 19 of the target electrode 1 generates floating.
  • the influence of the potential of the considered target electrode 1 by the sensor electrode 3 is to be considered.
  • a pixel ⁇ electrode of a AMLC display substrate including the can As an example of a floating target electrode 1, a pixel ⁇ electrode of a AMLC display substrate including the can, the pixel electrode surrounding gate and data lines are considered, the pixel electrode is controlled by a thin film transistor (Thin-Film Transistor, TFT). If the transistor blocks, the pixel electrode lies on a floating one Due to the capacitive coupling, the voltage and the sensor electrode 3 influence the electrode voltage to be measured. For the floating voltage on the pixel electrode and for each be ⁇ undesirables electrode at a floating potential following Equation 3 applies:
  • E e] eCi the voltages at the capacitive coupling electrodes, namely the sensor electrode 3 and the adjacent electrodes 19.
  • the voltage U float to be measured is thus a function of
  • Sensor electrode 3 includes, so does not correspond to the predetermined due to the arrangement order without sensor electrode value.
  • the voltage at the sensor electrode 3 can be adjusted in time so that U fj _ oat remains unchanged.
  • the electrode arrangement to be examined which may be, for example, that of an LCD display substrate, an OLED substrate, printed electronics and the like, is reduced to a respective smallest possible unit cell and the parasitic coupling capacitances are calculated from the field energy.
  • n-voltage devices are principally needed for n kapa ⁇ zitiv coupled electrodes to all the coupling capacitances to the considered target electrode 1, which is, for example, the pixel electrode ⁇ to calculate. Since in the present case, however, only the ratio of C pixsen to the sum of capacities Koppelkapa ⁇ ⁇ Cpix, eleci including the sensor electrode 3 i
  • Kickback or recoil 23 is used.
  • the potential of the Sensorelekt ⁇ rode 3 is increased.
  • the correction factor can be easily calculated from the ratio of the size of the
  • Voltage recoil 23 to the magnitude of the voltage jump 21 be expected.
  • a so-called voltage kick back or recoil voltage 23 operates as follows: Due to the i-th electrode results at the pixel electrode or target electrodes 1, a respective voltage surge of: pix, elec- j _
  • FIG. 1 shows in particular a pixel electrode as target electrode 1 at floating potential. Underneath the pixel electrode, the mathematical formula for the voltage recoil 23 due to the voltage jump 21 is shown in gray. Also highlighted in gray is in Figure 1 next to the
  • Measuring device 5 of the voltage jump 21 shown as a voltage increase AU A device for increasing the potential of the sensor electrode 3 may be, for example, a controllable voltage source.
  • a device for detecting the resulting voltage recoil 23 may, for example, be a correspondingly adapted voltmeter.
  • the calculation of the correction factor can be advantageously carried out in addition to the processing ⁇ processing device 15th
  • FIG. 1 shows that the potential of the left neighbor electrode 19 is fixed by means of a left voltage source U ] _.
  • Figure 1 shows that the potential of the right Neighboring electrode 19 is set with a voltage source U 2 .
  • Figure 2 shows a second embodiment of an inventive device.
  • Figure 2 shows a detail of figure 1, wherein the positioning device 2 blocks for positioning a constant electrical potential having Sen ⁇ sorelektrode 3 relative to the target electrode 1 and a one ⁇ direction 9 to the mechanical modulation of a Kondensatorstre- 11 a of the sensor electrode 3 and the target electrode 1 formed capacitor 13 are shown enlarged.
  • ⁇ additionally to Figure 2 is adjacent to the sensor electrode 3 is arranged ⁇ shields 25 as well as the destination electrode 1 ⁇ wear of the substrate 27.
  • the positioning device 2 is shown as a simple sensor bracket in FIG. 2 This may be playing as an air bearing as disclosed in DE 10 2006 054088 AI at ⁇ .
  • a holding element and an air-bearing element may be provided, which is attached to the holding element, which is formed such that together with the substrate 27, on which the target electrode 1 and the adjacent electrodes 19 are arranged, an air bearing can be formed, and which Has elasticity, so that the air-bearing element on unevenness of the surface of the target electrode 1 and the adjacent electrodes 19 having substrate 27 is adaptable.
  • the device 9 for the mechanical modulation of the capacitor section 11 is in particular a piezoelectric element which is mechanically connected to the sensor electrode 3.
  • the mechanical modulation by means of the piezoelectric element can in particular be sinusoidal.
  • the substrate 27 may be, for example, a glass substrate.
  • Figure 2 shows a Sen ⁇ sorelektrode 3 including shielding 25, wherein the sensor electrode 3 is connected with a piezoelectric element 9 and is kapa ⁇ zitiv coupled to a pixel electrode as an example of a target ⁇ electrode.
  • a harmonic change of the capacitor section 11 can be realized due to the combination or connec ⁇ tion of the sensor electrode 3 with a piezoelectric element 9.
  • the frequency spectrum of the charge-reversal current I signal sets in harmonic case exclu ⁇ Lich composed of multiples of the exciting frequency, the exciting frequency provides the greatest contribution.
  • the extent of the target electrode 1 under consideration should be greater than or equal to the extent of the shielding 25 and the distance between shielding 25 and sensor element is one fifth of the plate distance.
  • the velocity and the substrate structure result in a corresponding time in the corresponding sensor electrode 3, in which the above-mentioned conditions for the application of the analytical solution are fulfilled. Since an excitation frequency of the piezoelectric element 9 can be varied within a wide range, or piezoelectric elements 9 with different resonance frequencies can be used, small structures can also be resolved at high scanning speeds. According to Figure 2, the potential of the target electrode 1 may be determined by means of a voltage source ⁇ an alternative to FIG. 1 According to FIG. 2, the target electrode 1 is, for example, a pixel electrode.
  • FIG. 3 shows an exemplary embodiment of a method according to the invention.
  • a constant electrical potential ei ⁇ ner target electrode 1 is to be detected without contact.
  • a method is carried out with the following steps.
  • a positioning device 2 positioning of a sensor electrode 3 having a constant electrical potential relative to the target electrode 1 takes place at a predetermined electrode spacing for the capacitive coupling of the sensor electrode 3 to the target electrode 1.
  • a measuring device 5 is used Current flow of a recharging current I by at least one connected to the sensor electrode 3 electrical line 7 he ⁇ sums.
  • a fourth step S4 the potential of the target electrode by means of the detected charge-reversal current may be Calc ⁇ net additionally by means of a processing device.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

Selon l'invention, un potentiel électrique constant d'une électrode cible (1) est détecté sans contact. A cet effet, une électrode de détection (3) présentant un potentiel électrique constant est disposée à une distance d'électrode prédéfinie par rapport à l'électrode cible (1) pour réaliser un couplage capacitif de l'électrode de détection (3) avec l'électrode cible (1). Un dispositif de mesure (5) détecte un flux de courant d'un courant de décharge (I) à travers au moins un conducteur électrique (7) relié à l'électrode de détection (3). Le potentiel constant de l'électrode cible (1) peut être calculé au moyen d'un dispositif (9) destiné à modifier une longueur d'une section de condensateur (11) d'un condensateur (13) constitué de l'électrode de détection (3) et de l'électrode cible (1).
PCT/EP2011/054934 2010-05-10 2011-03-30 Capteur à tension constante Ceased WO2011141224A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE201010020011 DE102010020011A1 (de) 2010-05-10 2010-05-10 Konstant-Spannungs-Sensor
DE102010020011.5 2010-05-10

Publications (1)

Publication Number Publication Date
WO2011141224A1 true WO2011141224A1 (fr) 2011-11-17

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PCT/EP2011/054934 Ceased WO2011141224A1 (fr) 2010-05-10 2011-03-30 Capteur à tension constante

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DE (1) DE102010020011A1 (fr)
WO (1) WO2011141224A1 (fr)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878017A (en) * 1986-10-28 1989-10-31 Williams Bruce T High speed D.C. non-contacting electrostatic voltage follower
JPH08153762A (ja) * 1994-11-28 1996-06-11 Nec Corp ２層膜接触電位差測定装置及び２層膜接触電位差の測定 方法
DE102005022884A1 (de) 2005-05-18 2006-11-23 Siemens Ag Verfahren zur Inspektion einer Leiterbahnstruktur
US20070216418A1 (en) * 2006-03-10 2007-09-20 Dainippon Screen Mfg. Co., Ltd. Surface voltmeter and surface voltage measurement method
DE102006054088A1 (de) 2006-11-16 2008-05-21 Siemens Ag Messvorrichtung und Messverfahren zum Inspizieren einer Oberfläche eines Substrates
WO2008058949A2 (fr) 2006-11-16 2008-05-22 Siemens Aktiengesellschaft Élément de détection, dispositif et procédé pour inspecter une structure à pistes conductrices et procédé de production dudit élément de détection
JP2008128981A (ja) * 2006-11-24 2008-06-05 Canon Inc 電位測定装置及び方法、及び画像形成装置
US20080238434A1 (en) * 2007-03-29 2008-10-02 Dainippon Screen Mfg. Co., Ltd. Surface voltmeter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0823014A (ja) * 1994-07-08 1996-01-23 Fujitsu Ltd 信号波形測定装置及び信号波形測定方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878017A (en) * 1986-10-28 1989-10-31 Williams Bruce T High speed D.C. non-contacting electrostatic voltage follower
JPH08153762A (ja) * 1994-11-28 1996-06-11 Nec Corp ２層膜接触電位差測定装置及び２層膜接触電位差の測定 方法
DE102005022884A1 (de) 2005-05-18 2006-11-23 Siemens Ag Verfahren zur Inspektion einer Leiterbahnstruktur
US20070216418A1 (en) * 2006-03-10 2007-09-20 Dainippon Screen Mfg. Co., Ltd. Surface voltmeter and surface voltage measurement method
DE102006054088A1 (de) 2006-11-16 2008-05-21 Siemens Ag Messvorrichtung und Messverfahren zum Inspizieren einer Oberfläche eines Substrates
WO2008058949A2 (fr) 2006-11-16 2008-05-22 Siemens Aktiengesellschaft Élément de détection, dispositif et procédé pour inspecter une structure à pistes conductrices et procédé de production dudit élément de détection
JP2008128981A (ja) * 2006-11-24 2008-06-05 Canon Inc 電位測定装置及び方法、及び画像形成装置
US20080238434A1 (en) * 2007-03-29 2008-10-02 Dainippon Screen Mfg. Co., Ltd. Surface voltmeter

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