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WO2011031672A3 - Système parallèle pour déposition en phase vapeur par procédé chimique épitaxiale - Google Patents

Système parallèle pour déposition en phase vapeur par procédé chimique épitaxiale Download PDF

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Publication number
WO2011031672A3
WO2011031672A3 PCT/US2010/047993 US2010047993W WO2011031672A3 WO 2011031672 A3 WO2011031672 A3 WO 2011031672A3 US 2010047993 W US2010047993 W US 2010047993W WO 2011031672 A3 WO2011031672 A3 WO 2011031672A3
Authority
WO
WIPO (PCT)
Prior art keywords
parallel system
vapor deposition
chemical vapor
chamber
epitaxial chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/047993
Other languages
English (en)
Other versions
WO2011031672A2 (fr
Inventor
David K. Carlson
Errol Antonio C. Sanchez
Herman P. Diniz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2011031672A2 publication Critical patent/WO2011031672A2/fr
Publication of WO2011031672A3 publication Critical patent/WO2011031672A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention, selon des modes de réalisation, porte sur un système parallèle pour la déposition épitaxiale. Dans certains modes de réalisation, un système parallèle pour déposition épitaxiale comprend un premier corps comportant une première chambre de traitement et une deuxième chambre de traitement disposée à l'intérieur du premier corps ; un système d'injection de gaz partagé couplé à chacune des première et deuxième chambres de traitement ; et un système d'évacuation partagé couplé à chacune des première et deuxième chambres de traitement, le système d'évacuation ayant une commande indépendante d'une pression d'évacuation à partir de chaque chambre. Dans certains modes de réalisation, le système d'injection de gaz produit une commande indépendante de débit d'écoulement d'un gaz entrant dans chaque chambre.
PCT/US2010/047993 2009-09-09 2010-09-07 Système parallèle pour déposition en phase vapeur par procédé chimique épitaxiale Ceased WO2011031672A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US24100209P 2009-09-09 2009-09-09
US61/241,002 2009-09-09
US12/876,563 2010-09-07
US12/876,563 US20110100554A1 (en) 2009-09-09 2010-09-07 Parallel system for epitaxial chemical vapor deposition

Publications (2)

Publication Number Publication Date
WO2011031672A2 WO2011031672A2 (fr) 2011-03-17
WO2011031672A3 true WO2011031672A3 (fr) 2011-06-16

Family

ID=43733064

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047993 Ceased WO2011031672A2 (fr) 2009-09-09 2010-09-07 Système parallèle pour déposition en phase vapeur par procédé chimique épitaxiale

Country Status (3)

Country Link
US (1) US20110100554A1 (fr)
TW (1) TW201117268A (fr)
WO (1) WO2011031672A2 (fr)

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US20110290175A1 (en) * 2009-06-07 2011-12-01 Veeco Instruments, Inc. Multi-Chamber CVD Processing System
US9302291B2 (en) * 2011-08-05 2016-04-05 3M Innovative Properties Company Systems and methods for processing vapor
US9162209B2 (en) 2012-03-01 2015-10-20 Novellus Systems, Inc. Sequential cascading of reaction volumes as a chemical reuse strategy
JP2018107156A (ja) * 2016-12-22 2018-07-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
TWI846819B (zh) * 2019-02-13 2024-07-01 美商應用材料股份有限公司 用於單處理及多處理腔室流動串流共享的真空泵
CN112908902B (zh) * 2021-02-10 2024-04-09 长江存储科技有限责任公司 半导体器件处理设备及处理方法
IT202300022830A1 (it) * 2023-10-31 2025-05-01 Lpe S P A Reattore per deposizione epitassiale di materiale semiconduttore su substrati con doppia camera di reazione

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US5755888A (en) * 1994-09-01 1998-05-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus of forming thin films
KR20080012628A (ko) * 2006-08-04 2008-02-12 삼성전자주식회사 기판 처리 장치
KR100830850B1 (ko) * 2006-11-22 2008-05-20 피에스케이 주식회사 기판 처리 장치
KR20080112080A (ko) * 2007-06-20 2008-12-24 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 분리된 멀티스테이션 반응성 이온 에칭 챔버

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TW289839B (fr) * 1993-02-09 1996-11-01 Gen Instrument Corp
US6440221B2 (en) * 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
US6228773B1 (en) * 1998-04-14 2001-05-08 Matrix Integrated Systems, Inc. Synchronous multiplexed near zero overhead architecture for vacuum processes
US6995097B1 (en) * 1998-05-27 2006-02-07 Texas Instruments Incorporated Method for thermal nitridation and oxidation of semiconductor surface
US6210482B1 (en) * 1999-04-22 2001-04-03 Fujikin Incorporated Apparatus for feeding gases for use in semiconductor manufacturing
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US7041224B2 (en) * 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
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JP4093462B2 (ja) * 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5755888A (en) * 1994-09-01 1998-05-26 Matsushita Electric Industrial Co., Ltd. Method and apparatus of forming thin films
KR20080012628A (ko) * 2006-08-04 2008-02-12 삼성전자주식회사 기판 처리 장치
KR100830850B1 (ko) * 2006-11-22 2008-05-20 피에스케이 주식회사 기판 처리 장치
KR20080112080A (ko) * 2007-06-20 2008-12-24 어드밴스드 마이크로 패브리케이션 이큅먼트 인코퍼레이티드 아시아 분리된 멀티스테이션 반응성 이온 에칭 챔버

Also Published As

Publication number Publication date
US20110100554A1 (en) 2011-05-05
TW201117268A (en) 2011-05-16
WO2011031672A2 (fr) 2011-03-17

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