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WO2011028957A3 - Methods and devices for processing a precursor layer in a group via environment - Google Patents

Methods and devices for processing a precursor layer in a group via environment Download PDF

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Publication number
WO2011028957A3
WO2011028957A3 PCT/US2010/047748 US2010047748W WO2011028957A3 WO 2011028957 A3 WO2011028957 A3 WO 2011028957A3 US 2010047748 W US2010047748 W US 2010047748W WO 2011028957 A3 WO2011028957 A3 WO 2011028957A3
Authority
WO
WIPO (PCT)
Prior art keywords
methods
devices
processing
precursor layer
group via
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/047748
Other languages
French (fr)
Other versions
WO2011028957A2 (en
Inventor
Brent Bollman
Nathaniel Stanley
Matthew Diego Rail
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to EP10814527.7A priority Critical patent/EP2474044A4/en
Priority to JP2012528070A priority patent/JP2013504215A/en
Publication of WO2011028957A2 publication Critical patent/WO2011028957A2/en
Publication of WO2011028957A3 publication Critical patent/WO2011028957A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)

Abstract

Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.
PCT/US2010/047748 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment Ceased WO2011028957A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP10814527.7A EP2474044A4 (en) 2009-09-02 2010-09-02 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A VIA GROUP ENVIRONMENT
JP2012528070A JP2013504215A (en) 2009-09-02 2010-09-02 Methods and devices for processing precursor layers in a Group VIA environment

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23941609P 2009-09-02 2009-09-02
US61/239,416 2009-09-02
US24101509P 2009-09-09 2009-09-09
US61/241,015 2009-09-09

Publications (2)

Publication Number Publication Date
WO2011028957A2 WO2011028957A2 (en) 2011-03-10
WO2011028957A3 true WO2011028957A3 (en) 2011-07-14

Family

ID=43649971

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/047748 Ceased WO2011028957A2 (en) 2009-09-02 2010-09-02 Methods and devices for processing a precursor layer in a group via environment

Country Status (3)

Country Link
EP (1) EP2474044A4 (en)
JP (1) JP2013504215A (en)
WO (1) WO2011028957A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2469580A1 (en) * 2010-12-27 2012-06-27 Nexcis Improved interface between a I-III-VI2 material layer and a molybdenum substrate
JP2014513413A (en) * 2011-03-10 2014-05-29 サン−ゴバン グラス フランス Method for producing ternary compound semiconductor CZTSSe and thin film solar cell
JP5658112B2 (en) * 2011-09-15 2015-01-21 本田技研工業株式会社 Method for manufacturing chalcopyrite solar cell
WO2014002796A1 (en) * 2012-06-25 2014-01-03 京セラ株式会社 Photoelectric conversion apparatus and method for manufacturing photoelectric conversion apparatus
CN104885191B (en) * 2012-12-20 2017-11-28 法国圣戈班玻璃厂 Method for producing compound semiconductors and thin film solar cells
TWI449193B (en) * 2012-12-21 2014-08-11 財團法人工業技術研究院 Preparation method of solar cell absorption layer and heat treatment equipment thereof
FR3005371B1 (en) * 2013-05-03 2015-05-29 Nexcis FORMATION OF A SEMICONDUCTOR LAYER I-III-VI2 BY THERMAL TREATMENT AND CHALCOGENISATION OF A METAL PRECURSOR I-III
NL2010809C2 (en) * 2013-05-16 2014-11-24 Smit Ovens Bv DEVICE AND METHOD FOR APPLYING A MATERIAL TO A SUBSTRATE.
PT3016149T (en) * 2013-08-01 2021-05-06 Lg Chemical Ltd Aggregate phase precursor for producing light absorbing layer of solar cell and method for producing same
CN107604340B (en) * 2017-08-31 2023-09-01 安徽光智科技有限公司 Chemical Vapor Deposition Furnace

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
WO2009033674A2 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
US20090092744A1 (en) * 2007-10-05 2009-04-09 Mustafa Pinarbasi Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090183675A1 (en) * 2006-10-13 2009-07-23 Mustafa Pinarbasi Reactor to form solar cell absorbers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090050208A1 (en) * 2006-10-19 2009-02-26 Basol Bulent M Method and structures for controlling the group iiia material profile through a group ibiiiavia compound layer
WO2009033674A2 (en) * 2007-09-11 2009-03-19 Centrotherm Photovoltaics Ag Method and apparatus for thermally converting metallic precursor layers into semiconducting layers, and also solar module
US20090092744A1 (en) * 2007-10-05 2009-04-09 Mustafa Pinarbasi Roll to Roll Evaporation Tool for Solar Absorber Precursor Formation

Also Published As

Publication number Publication date
WO2011028957A2 (en) 2011-03-10
JP2013504215A (en) 2013-02-04
EP2474044A4 (en) 2014-01-15
EP2474044A2 (en) 2012-07-11

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