[go: up one dir, main page]

WO2011022189A3 - Synthèse de nanoparticules de tellurure de bismuth dopées à l'argent, à l'antimoine et à l'étain et tellurure de bismuth en vrac pour former des composites de tellurure de bismuth - Google Patents

Synthèse de nanoparticules de tellurure de bismuth dopées à l'argent, à l'antimoine et à l'étain et tellurure de bismuth en vrac pour former des composites de tellurure de bismuth Download PDF

Info

Publication number
WO2011022189A3
WO2011022189A3 PCT/US2010/043847 US2010043847W WO2011022189A3 WO 2011022189 A3 WO2011022189 A3 WO 2011022189A3 US 2010043847 W US2010043847 W US 2010043847W WO 2011022189 A3 WO2011022189 A3 WO 2011022189A3
Authority
WO
WIPO (PCT)
Prior art keywords
bismuth telluride
nanoparticles
antimony
silver
composites
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/043847
Other languages
English (en)
Other versions
WO2011022189A2 (fr
Inventor
Arup Purkayastha
Purushottam Joshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laird Technologies Inc
Original Assignee
Laird Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laird Technologies Inc filed Critical Laird Technologies Inc
Priority to KR1020127006834A priority Critical patent/KR101409505B1/ko
Publication of WO2011022189A2 publication Critical patent/WO2011022189A2/fr
Publication of WO2011022189A3 publication Critical patent/WO2011022189A3/fr
Priority to US13/398,274 priority patent/US8748726B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/007—Tellurides or selenides of metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/40—Particle morphology extending in three dimensions prism-like
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

Conformément à différents aspects de l'invention, des modes de réalisation de celle-ci à titre d'exemples portent sur des matériaux thermoélectriques, lesquels modes de réalisation peuvent avoir un facteur de qualité amélioré. Dans un mode de réalisation à titre d'exemple, un matériau thermoélectrique comprend d'une manière générale des nanoparticules de tellurure de bismuth, qui peuvent être non dopées ou dopées par au moins un ou plusieurs parmi l'argent, l'antimoine, l'étain, et/ou une combinaison de ceux-ci. Les nanoparticules de tellurure de bismuth peuvent être dispersées dans une matière de matrice comprenant du tellurure de bismuth particulaire. L'invention concerne également des procédés pour la fabrication de nanoparticules de tellurure de bismuth non dopées et dopées, qui peuvent comprendre un procédé solvothermique pour la fabrication de nanoparticules de tellurure de bismuth ayant une dimension allant de 1 à 200 nanomètres.
PCT/US2010/043847 2009-08-17 2010-07-30 Synthèse de nanoparticules de tellurure de bismuth dopées à l'argent, à l'antimoine et à l'étain et tellurure de bismuth en vrac pour former des composites de tellurure de bismuth Ceased WO2011022189A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020127006834A KR101409505B1 (ko) 2009-08-17 2010-07-30 은, 안티몬 및 주석이 도핑된 텔루르화 비스무트 나노입자의 합성 및 텔루르화 비스무트 복합재를 형성하기 위한 벌크 텔루르화 비스무트
US13/398,274 US8748726B2 (en) 2009-08-17 2012-02-16 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IN1888MU2009 2009-08-17
IN1888/MUM/2009 2009-08-17

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/398,274 Continuation US8748726B2 (en) 2009-08-17 2012-02-16 Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites

Publications (2)

Publication Number Publication Date
WO2011022189A2 WO2011022189A2 (fr) 2011-02-24
WO2011022189A3 true WO2011022189A3 (fr) 2011-06-16

Family

ID=43607531

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/043847 Ceased WO2011022189A2 (fr) 2009-08-17 2010-07-30 Synthèse de nanoparticules de tellurure de bismuth dopées à l'argent, à l'antimoine et à l'étain et tellurure de bismuth en vrac pour former des composites de tellurure de bismuth

Country Status (3)

Country Link
KR (1) KR101409505B1 (fr)
TW (1) TW201118041A (fr)
WO (1) WO2011022189A2 (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8748726B2 (en) 2009-08-17 2014-06-10 Laird Technologies, Inc. Synthesis of silver, antimony, and tin doped bismuth telluride nanoparticles and bulk bismuth telluride to form bismuth telluride composites
US8691612B2 (en) 2010-12-10 2014-04-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of creating micro-scale silver telluride grains covered with bismuth nanoparticles
KR101286108B1 (ko) 2011-04-11 2013-07-15 한국화학연구원 용매열합성에 의한 텔륨 나노와이어 및 비스무스텔루라이드 나노튜브의 제조방법
KR101902925B1 (ko) * 2011-08-03 2018-10-01 삼성전자주식회사 열전재료, 열전소자 및 열전모듈
CN102569630B (zh) * 2012-03-05 2016-01-06 中国科学院上海硅酸盐研究所 一种层状无机化合物/有机物插层复合热电材料及其制备方法
TWI491556B (zh) * 2012-12-21 2015-07-11 Ind Tech Res Inst 熱電材料及其製造方法
KR102097063B1 (ko) 2013-05-28 2020-04-06 삼성전자주식회사 열전재료, 이를 포함하는 열전소자 및 열전장치, 및 이의 제조방법
DE102013108791B3 (de) * 2013-08-14 2014-12-11 O-Flexx Technologies Gmbh Verfahren zum Abscheiden von thermoelektrischem Material
KR101631858B1 (ko) * 2014-06-24 2016-06-20 한국전기연구원 침입형 도핑재 첨가에 의해 복합결정구조가 형성된 Ｔｅ계 열전재료
TWI589039B (zh) * 2016-01-22 2017-06-21 中國鋼鐵股份有限公司 ｎ型碲化鉍系熱電複材及其製造方法
TWI641167B (zh) * 2016-12-21 2018-11-11 中國鋼鐵股份有限公司 Thermoelectric module
KR102372437B1 (ko) * 2017-11-01 2022-03-08 한국전기연구원 육각판상형 나노구조를 가지는 a2b3 계 열전재료 및 이의 제조방법
TWI683910B (zh) 2018-10-18 2020-02-01 國立中山大學 熱電合金及其製作方法與熱電合金複合物
CN109659425B (zh) * 2018-12-29 2020-07-10 昆明理工大学 一种利用阻隔层提升掺杂效果的铋基热电材料及其制备方法
CN111435698A (zh) * 2019-01-14 2020-07-21 中国科学院宁波材料技术与工程研究所 一种碲化铋基热电材料及其制备方法
CN112531097B (zh) * 2020-11-13 2023-10-10 深圳热电新能源科技有限公司 n型碲化铋基热电材料及其制备方法
CN114618534B (zh) * 2022-04-18 2024-02-20 合肥工业大学 一种可见光响应的硫掺杂碲化铋纳米线光催化材料及其制备方法
CN115956583A (zh) * 2022-12-29 2023-04-14 长沙麓山微纳科技有限公司 一种铜-碲化铋纳米短棒抗菌活性材料及其制备和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
JP2007281070A (ja) * 2006-04-04 2007-10-25 Denso Corp 熱電変換素子およびその製造方法
JP2008147625A (ja) * 2006-10-13 2008-06-26 Toyota Motor Engineering & Manufacturing North America Inc コア−シェルナノ粒子を用いる均一熱電ナノ複合材料
KR20080104455A (ko) * 2007-05-28 2008-12-03 연세대학교 산학협력단 인장응력을 이용한 단결정 열전 나노선 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4000023B2 (ja) 2002-08-07 2007-10-31 北川工業株式会社 熱電材料成形体、および熱電材料成形体の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7098393B2 (en) * 2001-05-18 2006-08-29 California Institute Of Technology Thermoelectric device with multiple, nanometer scale, elements
JP2007281070A (ja) * 2006-04-04 2007-10-25 Denso Corp 熱電変換素子およびその製造方法
JP2008147625A (ja) * 2006-10-13 2008-06-26 Toyota Motor Engineering & Manufacturing North America Inc コア−シェルナノ粒子を用いる均一熱電ナノ複合材料
KR20080104455A (ko) * 2007-05-28 2008-12-03 연세대학교 산학협력단 인장응력을 이용한 단결정 열전 나노선 제조 방법

Also Published As

Publication number Publication date
KR20120064680A (ko) 2012-06-19
KR101409505B1 (ko) 2014-06-25
WO2011022189A2 (fr) 2011-02-24
TW201118041A (en) 2011-06-01

Similar Documents

Publication Publication Date Title
WO2011022189A3 (fr) Synthèse de nanoparticules de tellurure de bismuth dopées à l'argent, à l'antimoine et à l'étain et tellurure de bismuth en vrac pour former des composites de tellurure de bismuth
Dingreville et al. Surface free energy and its effect on the elastic behavior of nano-sized particles, wires and films
WO2008140596A3 (fr) Procédés pour un facteur de mérite élevé dans des matériaux thermoélectriques nanostructurés
WO2008082698A3 (fr) Dispositifs médicaux et procédés de fabrication de ceux-ci
WO2010148058A3 (fr) Composition de chocolat résistante en température et procédé
WO2011037794A3 (fr) Compositions thermoélectriques comprenant des inclusions nanométriques dans une matrice chalcogénure
WO2009101593A3 (fr) Particule d'administration
WO2012138439A3 (fr) Articles contenant des nanoparticules de cuivre et leurs procédés de production et d'utilisation
WO2010041146A3 (fr) Matériau nanocomposite de conversion thermoélectrique, élément de conversion thermoélectrique comportant celui-ci, et procédé de production de matériau nanocomposite de conversion thermoélectrique
WO2007053571A3 (fr) Materiau d'interface thermique avec garnissages conducteurs de chaleur a granulometrie multiple
WO2005072680A3 (fr) Particules et compositions
WO2009132314A3 (fr) Matériaux thermoélectriques perfectionnés combinant un facteur de puissance augmenté à une conductivité thermique réduite
WO2007120255A3 (fr) Hétérostructures de nanocristaux semi-conducteurs
AU2006282042A8 (en) Nanoparticle fabrication methods, systems, and materials
WO2011086464A3 (fr) Matériau de conversion thermoélectrique nanocomposite et son procédé de fabrication
WO2012138979A3 (fr) Matériaux thermoélectriques et leurs procédés de synthèse
WO2013119298A3 (fr) Matériaux compacts de nanoparticules destinés à une application thermoélectrique
WO2007038220A3 (fr) Materiau particulaire hybride organique-inorganique et compositions polymeres contenant celui-ci
WO2010014215A3 (fr) Matériaux nanocomposites de graphène et d'oxyde de métal
WO2009035907A3 (fr) Matériau d'interface thermique, dispositif électronique contenant le matériau d'interface thermique et leurs procédés de préparation et d'utilisation
WO2007106770A3 (fr) Materiaux a indice de refraction eleve comprenant des compositions de nanocristaux semiconducteurs, procede de fabrication et applications associes
WO2012048025A3 (fr) Matériaux composites comprenant des nanoparticules, outils de forage et composants comprenant de tels matériaux composites, matériaux polycristallins comprenant des nanoparticules, et procédés associés
WO2008045101A3 (fr) Composites nanoénergétiques ordonnés et procédé de synthèse
WO2012063110A3 (fr) Matériau de conversion thermoélectrique nanocomposite, son procédé de production et élément de conversion thermoélectrique
WO2009000650A3 (fr) Polymères particulaires contenant une substance active biocide

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10810361

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20127006834

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 10810361

Country of ref document: EP

Kind code of ref document: A2