WO2011011902A1 - Led illuminating device and chip of led array - Google Patents

Abstract

A LED illuminating device includes a base, a chip of LED array and a rectification unit. The chip of LED array has a substrate and a plurality of electric connected LEDs on the substrate. Each LED has a plurality of semiconductor layers stacked on the substrate. The rectification unit is electrically connected with the LEDs. The rectification unit can transform the AC power signal into DC power signal to make the LEDs emit light after receiving the DC power signal. The rectification unit and the chip of LED array are located separately on the different area of the base.

Description

 LED lighting device and LED array chip

 The present invention relates to an LED lighting device and an LED array chip, and more particularly to an LED lighting device and an LED array chip that are converted into DC driving using AC power. Background technique

 With the continuous development of optoelectronic technology, light-emitting diodes, which are one of the light-emitting sources, have been widely used in various fields and occupy a pivotal position in the optoelectronic industry. At present, the power source generally available around the world is alternating current. Since the polarity of the alternating current voltage changes alternately with time, it is difficult to apply it directly to the light-emitting diode, especially if the light-emitting diode is applied to the illumination source.

 Taiwan Patent No. 1302039 proposes an LED circuit structure having an AC loop, comprising a set of AC micro-crystal LED modules formed on a chip, and the AC micro-crystal LED module is composed of two crystallites The granular light emitting diodes are connected in reverse positive and negative parallel, and an alternating current can be applied to cause the two microcrystalline light emitting diodes to illuminate in a positive and negative half wave action.

 However, in the well-known light-emitting diode die structure with an alternating current loop, since each of the light-emitting diode microcrystals can emit light only under the condition of forward or reverse bias in one alternating current period, in other words, the light-emitting area at each instant. It occupies only half of the surface area of the chip, while the tiny grains in the other half of the area do not emit light, thus causing waste of the light-emitting area. Summary of the invention

 SUMMARY OF THE INVENTION An object of the present invention is to provide an LED lighting device and an LED array chip which have the advantages of high luminous efficiency, large luminous area, and easy replacement of damaged components.

An embodiment of the present invention provides a light emitting diode illumination device including a bottom plate, an LED array chip, and a rectifying unit. The LED array chip has a substrate and a plurality of electrodes disposed on the substrate and electrically connected a light emitting diode, each light emitting diode has a plurality of semiconductor layers stacked on the substrate, the rectifying unit is electrically connected to the light emitting diode, and the rectifying unit converts an alternating current power signal into a direct current power signal, so that the light emitting diodes receive After the DC power signal, a light source is emitted, wherein the rectifying unit and the LED array chip are separately disposed on different areas of the bottom plate. In an embodiment of the invention, the semiconductor layer of each of the light emitting diodes includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer sequentially stacked on the substrate.

 In an embodiment of the invention, the semiconductor layer of each of the light emitting diodes includes a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and is sequentially stacked on the substrate.

 In an embodiment of the invention, each of the light emitting diodes further includes a first bonding pad formed on the n-type semiconductor layer, and a second bonding pad formed on the p-type semiconductor layer.

 In an embodiment of the invention, the rectifying unit comprises a Wheatstone Bridge composed of at least four rectifying elements, each rectifying element being fixed to the bottom plate by soldering or adhesive bonding, respectively. .

 In an embodiment of the invention, the Wheatstone bridge includes a first current path and a second current path, and a first rectifying element, an LED array chip and a third rectifying element are located on the first current path. And connected in series, and a fourth rectifying component, the LED array chip and a second rectifying component are located on the second current path and are connected in series in series.

 In an embodiment of the invention, the rectifying unit further includes a first conductive pattern and a second conductive pattern respectively disposed on the bottom plate, wherein the first conductive pattern is electrically connected to one end of the AC power signal and the first rectifying element And a second rectifying element, wherein the second conductive pattern is used to electrically connect the other end of the AC power signal with the third rectifying element and the fourth rectifying element.

 In an embodiment of the invention, the rectifying unit further includes a third conductive pattern and a fourth conductive pattern respectively disposed on the bottom plate, wherein the third conductive pattern is electrically connected to an electrode of the LED array chip and the first And a fourth rectifying element for electrically connecting the other electrode of the LED array chip with the second rectifying element and the third rectifying element.

 In an embodiment of the invention, the rectifying elements are Schottky Barrier Diodes (SBDs).

 In an embodiment of the invention, the rectifying elements comprise a silicon semiconductor component or a III-V compound semiconductor component.

 In an embodiment of the invention, the AC power signal is 90-120 volts, 180-240 volts, or 270-330 volts. In an embodiment of the invention, the light emitting diodes formed in the LED array chip are connected in series or in parallel.

 In an embodiment of the invention, the light emitting diodes formed in the LED array chip are connected in series and in parallel.

In an embodiment of the invention, the material of the substrate comprises sapphire, silicon carbide (SiC), silicon (Si), oxygen. Zinc (ZnO), gallium arsenide (GaAs) and spinel (MgAl204).

 In an embodiment of the invention, the bottom plate is constructed of a thermally conductive material.

 In an embodiment of the invention, the bottom plate is a circuit board, a silicon substrate, a ceramic substrate or a metal substrate. In an embodiment of the invention, the bottom plate further includes a heat sink, and the LED array chip is disposed on the heat dissipation block to provide a heat dissipation path for the LED chip, wherein the bottom plate is a circuit board and a silicon substrate. Or a ceramic substrate.

 In an embodiment of the invention, the semiconductor layer of the light emitting diode comprises gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, indium gallium phosphide, aluminum phosphide, phosphating Gallium, indium phosphide, and gallium arsenide are at least one of them. In an embodiment of the invention, the semiconductor layer of the light emitting diode is formed by epitaxy.

 In an embodiment of the invention, the LED array chip is fixed to the substrate by solder bonding or adhesive bonding.

 In an embodiment of the invention, the light emitting diodes formed in the LED array chip have the same wavelength or different wavelengths.

 In an embodiment of the invention, the LED array chip further includes at least one phosphor material disposed on the light emitting diodes.

 In an embodiment of the invention, the light emitted by the light emitting diodes is mixed with the light emitted by the phosphor material to form white light.

 In an embodiment of the invention, the light emitted by the light emitting diodes includes blue light and ultraviolet light.

 In an embodiment of the invention, when the light emitted by the light emitting diodes is blue light, the phosphor material is a yellow phosphor or a red phosphor plus a green phosphor.

 In an embodiment of the invention, when the light emitted by the light emitting diodes is ultraviolet light, the phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus a green phosphor plus a blue phosphor.

 An embodiment of the present invention provides an LED lighting device, including an LED array chip and a rectifying unit, the LED array chip having a substrate and a plurality of LEDs disposed on the substrate and electrically connected Each of the light emitting diodes has a plurality of semiconductor layers stacked on the substrate, the rectifying unit being electrically connected to the plurality of light emitting diodes, the rectifying unit converting an alternating current power signal into a direct current power signal, so that After receiving the DC power signal, the plurality of LEDs emit a light source, wherein the rectifying unit is not disposed on the substrate.

In an embodiment of the invention, the rectifying unit comprises a Wheatstone Bridge composed of at least four rectifying elements, wherein each rectifying element is not disposed on the substrate. Furthermore, an embodiment of the present invention provides an LED array chip for receiving a DC power signal and emitting a light source. The LED array chip includes a substrate and a plurality of LEDs, and the LEDs are disposed at The substrate is electrically connected to each other, and each of the light emitting diodes has a plurality of semiconductor layers stacked on the substrate.

 In an embodiment of the invention, the semiconductor layer of each of the light emitting diodes includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer, and is sequentially stacked on the substrate.

In an embodiment of the invention, the semiconductor layer of each of the light emitting diodes includes a p-type semiconductor layer, an active layer, and an _n -type semiconductor layer, and is sequentially stacked on the substrate.

 In an embodiment of the invention, each of the light emitting diodes further includes a first bonding pad formed on the n-type semiconductor layer, and a second bonding pad formed on the p-type semiconductor layer.

 In an embodiment of the invention, the material of the semiconductor layers of the plurality of light emitting diodes comprises gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, indium gallium phosphide, aluminum phosphide, phosphorus At least one of gallium phosphide, indium phosphide and gallium arsenide. In one embodiment of the invention, the material of the substrate comprises sapphire, silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), Gallium arsenide (GaAs) and spinel (MgA1204).

 In an embodiment of the invention, the plurality of light emitting diodes are connected in series or in parallel.

 In an embodiment of the invention, the plurality of light emitting diodes comprise a plurality of groups connected in parallel, wherein each of the groups has a plurality of the aforementioned light emitting diodes connected in series.

 In an embodiment of the invention, the plurality of light emitting diodes comprise a plurality of groups connected in series, wherein each of the groups has a plurality of the aforementioned light emitting diodes connected in parallel.

 In an embodiment of the invention, the plurality of light emitting diodes comprise a plurality of first groups connected in series, wherein each first group has a plurality of second groups connected in parallel, each second group having a plurality of series connected The aforementioned light emitting diode is connected.

 In an embodiment of the invention, the plurality of light emitting diodes includes at least one first group and a plurality of second groups connected in parallel, the first group being connected in series with the plurality of second groups, the first group Having at least one of the aforementioned light emitting diodes connected in series, and the second group has at least one of the aforementioned light emitting diodes connected in series.

 In an embodiment of the invention, the plurality of light emitting diodes are of the same wavelength or different wavelengths.

 In an embodiment of the invention, the method further includes disposing at least one phosphor material on the plurality of light emitting diodes. In an embodiment of the invention, the light emitted by the plurality of light emitting diodes is mixed with the light emitted by the phosphor material to form white light.

 In an embodiment of the invention, the light emitted by the plurality of light emitting diodes includes blue light and ultraviolet light.

In an embodiment of the invention, when the light emitted by the plurality of light emitting diodes is blue light, the phosphor material is A yellow phosphor or a red phosphor plus a green phosphor.

 In an embodiment of the invention, when the light emitted by the plurality of light emitting diodes is ultraviolet light, the phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus a green phosphor plus blue fluorescence. body.

 Based on the above, the LED lighting device of the embodiment of the present invention separately disposes the LED array chip and the rectifying unit on different areas of the bottom plate. Therefore, when the rectifying element or the LED array chip is damaged, only the device needs to be Damaged electronic components are replaced and therefore easy to repair. In addition, since the LED lighting device of the embodiment of the present invention is rectified by using a Wheatstone bridge composed of at least four rectifying elements, the rectified DC power signal can cause the LED arrays to continuously emit light. In this way, the luminous efficiency of the illumination device and the comprehensive uniform illumination effect can be increased.

 The above described features and advantages of the present invention will become more apparent from the description of the appended claims. DRAWINGS

 FIG. 1 is a top plan view of an LED lighting device according to an embodiment of the invention.

 2 is a schematic cross-sectional view of the LED lighting device of FIG. 1.

 3 is an equivalent circuit diagram of the LED lighting device of FIGS. 1 and 2.

 FIG. 4 is an equivalent circuit diagram of an LED lighting device according to another embodiment of the present invention.

 FIG. 5 is an equivalent circuit diagram of an LED lighting device according to still another embodiment of the present invention.

 6 is an equivalent circuit diagram of an LED lighting device according to still another embodiment of the present invention.

 FIG. 7 is an equivalent circuit diagram of an LED lighting device according to a further embodiment of the present invention.

 The reference numerals in the above figures are as follows:

 10 bottom plate

 20 LED array chip

25 _n -type semiconductor layer

 26 active layer

 27 p-type semiconductor layer

 28 first pad

 29 second pad

 30 rectifier unit

301 first rectifying element 302 second rectifying element

 303 third rectifying element

 304 fourth rectifying element

 40 first conductive pattern

 41 second conductive pattern

 42 third conductive pattern

 43 fourth conductive pattern

 50 heat sink block

 k first current path

 Lb second current path

 L wire

 1 is a plan view of an LED lighting device according to an embodiment of the present invention, FIG. 2 is a cross-sectional view of the LED lighting device of FIG. 1, and FIG. 3 is an equivalent circuit diagram of the LED lighting device of FIGS. 1 and 2. First, referring to FIG. 1 and FIG. 2, the LED lighting device of the present invention mainly includes a bottom plate 10, an LED array chip 20, and a rectifying unit 30. The rectifying unit 30 and the LED array chip 20 are disposed on the bottom plate 10. The rectifying unit 30 and the LED array chip 20 are electrically connected to each other through a wire L.

 In this embodiment, the substrate 10 is a circuit board, a silicon substrate or a ceramic substrate for carrying the LED array chip 20 and the rectifying unit 30. The ceramic substrate material is, for example, alumina (A1203). In other embodiments, a heat dissipating block 50 is disposed in the bottom plate 10, and the LED array chip 20 is disposed on the heat dissipating block 50. Therefore, when the LED array chip 20 generates heat during operation, the heat dissipating block 50 can be quickly adopted. The exclusion of thermal energy from the device improves the reliability of the LED lighting device of the present invention. In addition, in other embodiments, the bottom plate 10 may be formed of a heat conductive material, such as a metal substrate, and the heat conductive material provides the LED array chip 20 and the rectifying unit 30 - a good heat dissipation path.

In addition, the LED array chip 20 includes a substrate 21 and first to nth LEDs 20-1 to 20-n disposed on the substrate 21 and connected in series to each other. The light emitting diode may be a blue light emitting diode or an ultraviolet light emitting diode. The blue light emitting diode emits a wavelength range of, for example, 430 nm to 480 nm, and the ultraviolet light emitting diode emits a wavelength range of, for example, 360 nm to 415 nm. In this embodiment, each of the light emitting diodes includes an n-type semiconductor layer 25, an active layer 26, and a p-type semiconductor layer 27, which are sequentially stacked on the substrate 21. Of course, the stacking order of the semiconductor layers is not limited thereto. In other examples, the stacking order of the semiconductor layers may be sequentially forming a p-type semiconductor layer 27, an active layer 26, and an n-type semiconductor layer on the substrate 21. 25. In this embodiment, the substrate 21 may be a growth substrate formed by an epitaxial light-emitting diode or grown by laser lift-off technology or other substrate removal technologies. After the substrate is peeled off, the support substrate is bonded. The material of the substrate 21 may be, for example but not limited to, sapphire, silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), gallium arsenide (GaAs), and spinel (MgAl204). The material of the semiconductor layer 25, the active layer 26 and the p-type semiconductor layer 27 is a binary, ternary or quaternary semiconductor material including, but not limited to, gallium nitride, aluminum gallium nitride, indium gallium nitride or aluminum. Indium gallium nitride or the like, in other embodiments, the n-type semiconductor layer 25, the active layer 26, and the p-type semiconductor layer 27 may be composed of other materials, such as indium gallium phosphide (InGaAlP;), phosphorus. Aluminum (A1P), gallium phosphide (GaP), indium phosphide (InP) or gallium arsenide (GaAs). It is to be noted that the light emitting diode structure used in one embodiment of the LED lighting device of the present invention is such that the growth substrate 21 is used as a substrate, and the n-type semiconductor layer 25 and the active layer of the stacked structure are formed in an epitaxial manner. 26 and the p-type semiconductor layer 27 are formed on the growth substrate 21, or the p-type semiconductor layer 27, the active layer 26, and the n-type semiconductor layer 25 which are formed in a stacked manner on the growth substrate 21, however, The semiconductor layer of the inventive light emitting diode is not limited to being fabricated on a grown substrate in an epitaxial manner, and other semiconductor layer deposition methods well known in the art are, for example, laser lift-ofi techniques or other substrate removal. It is also within the scope of the present invention to attach a support substrate to which the grown substrate is peeled off and then bonded. Of course, the light emitting diode of this embodiment may include a homogenous structure or a heterostructure. In addition, each of the LEDs of the illumination device of the present invention has a first bonding pad 28 and a second pad 29 formed on the n-type semiconductor layer 25 and the p-type semiconductor layer 27, respectively. The first pad 20 of the diode 20-1 is electrically connected to the second pad 29 of the adjacent LED through the wire L, and so on, the first pad of the n-1th LED passes through the wire L and the first The second pads 29 of the n light emitting diodes 20-n form an electrical connection.

In addition, the LED array chip 20 of the LED lighting device of the present invention comprises at least one phosphor material layer 22 formed on each of the LEDs, and the phosphor material layer 22 is formed by, for example, gas spraying, ultrasonic vibration or In the method of dispensing, if a gas spraying method is used, a phosphor layer 22 of a uniform thickness is formed on the surface of each of the light emitting diodes of the LED array chip 20. The phosphor material layer 22 is filled with at least one phosphor material, and after being excited by the LED array chip 20, the phosphor material is converted into light of different wavelengths emitted by the LED array chip 20, for example, yellow, red, Green visible light. The phosphor material of the phosphor material layer 22 may be a yttrium aluminum garnet doped germanium, such as TAG: Ce or YAG: Ce _; or a silicate-based phosphor such as (SrBa)Si04: Eu ^{2 +} , (SrBa)Si(OCl)4 _: Eu ²⁺ , (SrBa)Si04- _x Clx _: Eu ²⁺ ; or an oxynitride phosphor, for example, (SrBaCa)Si202N2, (SrBaCa)Si2(OCl)2N2. In the LED lighting device of the present invention, the light source emitted from the light emitting diode of the LED array chip 20 is mixed with the phosphor material of the phosphor material layer 22 to obtain a white light illumination device after being excited and converted, for example, when the light emitting diode When the emitted light is blue light, the phosphor material is a yellow phosphor, or when the light emitted by the light emitting diode is blue light, the phosphor material is a red phosphor plus a green phosphor, and when the light emitted by the LED is ultraviolet light, The phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus a green phosphor plus a blue phosphor. Further, in consideration of factors such as luminous efficiency or color rendering index, a combination of two or more kinds of phosphors may be selected.

 After the completion of the fabrication of the LED array chip 20, the LED array chip 20 is fixed to the substrate 10 by solder bonding or adhesive bonding, and the rectifying unit 30 is also disposed on the substrate 10, but The LED array chip 20 is located in a different area, wherein the rectifying unit 30 is fixed to the bottom plate 10 by soldering or adhesive bonding and disposed at a distance from the LED array chip 20, and thus, when the rectifying unit 30 When the LED array chip 20 is damaged, only the damaged electronic components in the device need to be replaced, so that the repair is much simpler.

 Referring to FIG. 1 , FIG. 2 and FIG. 3 , in a preferred embodiment of the illumination device of the present invention, the rectifying unit 30 is composed of at least a first rectifying element 301 , a second rectifying element 302 , and a third rectifying unit . A Wheatstone Bridge composed of an element 303 and a fourth rectifying element 304, and each of the rectifying elements 301, 302, 303, and 304 is disposed on the bottom plate 10, respectively. In this embodiment, the rectifying elements 301-304 may be Schottky Barrier Diodes (SBDs). In other embodiments, the rectifying elements 301-304 may be silicon semiconductor elements or III-V compound semiconductors. element.

 It should be noted that since the reverse breakdown voltage of the silicon semiconductor device is about 3000V-6000V, and the reverse breakdown voltage of the III-V compound semiconductor is about 20V-30V, in the present invention, the rectifying elements 301-304 are more It is preferable to use a silicon semiconductor element, so that a relatively high reverse surge can be withstood, thereby improving the reliability of the illumination device of the present invention.

The rectifying unit 30 of the present invention is configured to rectify the received AC power signal (AC), convert it into a DC power signal (DC), and input it into a plurality of LEDs of the LED array chip 20, and each LED receives After the converted DC power signal, it will turn on and emit a light. In an embodiment of the invention, the AC power signal is 90-120 volts, 180-240 volts, or 270-330 volts. A preferred embodiment of the plurality of rectifying elements 301-304 of the rectifying unit 30 is as shown in Figs. 1, 2 and 3, and the number of rectifying elements 301-304 of the rectifying unit 30 of the present invention is described. Can be adjusted according to actual needs, Figure 1, Figure 2 and Figure 3 only show the hair The preferred embodiment of the rectifying unit is illustrated, but the number of rectifying elements is not limited to that shown.

 It is to be noted that the rectifying unit of the present invention has a first current path la and a second current path Ib, wherein the first rectifying element 301, the LED array chip 20 and the third rectifying element 303 are located on the first current path k. And connected in series in series, and the fourth rectifying element 302, the LED array chip 20 and the second rectifying element 304 are located on the second current path lb and are connected in series in series. In this way, when the AC voltage signal is applied to the illumination device of the present invention, in a case where the time is, for example, a positive period, the current flows through the first path k to turn on the LED array chip 20 and emit light. When a time point is, for example, a negative period, a current flows through the second path lb to turn on the light emitting diode array chip 20 and emit light. Therefore, the illumination device of the present invention supplies the alternating voltage signal via the rectifying unit 30. After rectification of the first rectifying element 301, the second rectifying element 302, the third rectifying element 303, and the fourth rectifying element 304, the LED of the LED array chip can be turned on, so that the state of illumination can be continuously maintained, thereby improving The overall luminous efficiency of the lighting device.

 In addition, the illuminating device of the present invention further includes a first conductive pattern 40 and a fourth conductive pattern 43 respectively disposed on the bottom plate 10, and the first conductive pattern 40 passes through the wire L and the first rectifying element 301 and The two rectifying elements 302 are electrically connected. The alternating current signal is input to the first rectifying element 301 via the first conductive pattern 40 and flows through the illuminating diode array chip 20 and the third rectifying element 303. The fourth conductive pattern 43 is electrically connected to the third rectifying element 303 and the fourth rectifying element 304 through the wire L, and the alternating current signal is input from the fourth conductive pattern 43 to the fourth rectifying element 304 and flows through the LED array chip 20 . And a second rectifying element 302.

 In addition, the rectifying unit of the present invention further includes a second conductive pattern 41 and a third conductive pattern 42 respectively disposed on the bottom plate 10, and the second conductive pattern 41 is electrically connected to an electrode of the LED array chip 20 through the wire L. The first rectifying element 301 and the fourth rectifying element 304 are electrically connected to the other electrode of the LED array chip 20 and the second rectifying element 302 and the third rectifying element 303 via the wire L.

 Next, please refer to FIG. 4 , which is an equivalent circuit diagram of an LED lighting device according to another embodiment of the present invention. The difference between the embodiment and the above embodiment is that the light emitting diodes in the LED array chip 20 are not limited to a single row connected in series, and the LEDs of the LED array chip in FIG. 4 are connected in parallel by a double row serial array, such that The light-emitting diode used in the illumination device of the present invention may be monochromatic light or multi-color light, so that the same number of wavelengths but the same wavelength can be used, or the light-emitting diodes with different wavelengths can achieve the effect of light mixing.

 Of course, the light-emitting diodes in the LED array chip are not limited to a single-row series connection or a two-row series array connection, and the light-emitting diodes can be connected in series and in parallel, as shown in FIG. 6 and FIG.

5 is an equivalent circuit diagram of an LED lighting device according to still another embodiment of the present invention, wherein the LED includes at least a first group and a plurality of second groups connected in parallel, the first group and the second group being between each other Series connection, first group There are two LEDs connected in series, which are respectively located at the upper and lower positions of the second group, and each of the second groups has a plurality of LEDs connected in series.

 6 is an equivalent circuit diagram of an LED lighting device according to still another embodiment of the present invention, wherein the LED includes a plurality of groups connected in series, and each group has two LEDs connected in parallel. 7 is an equivalent circuit diagram of an LED lighting device according to a further embodiment of the present invention, wherein the LED includes a plurality of first groups connected in series, and each of the first groups has a plurality of second groups connected in parallel. And in each of the second groups, there are a plurality of light-emitting diodes connected in series.

 Since most of the light emitting diode array chips of the present invention are connected in series in a single row, as shown in FIG. 3; or in a double row series array connected in parallel, as shown in FIG. 4; or a series and parallel connection mode, reference drawing 6 and FIG. 7, therefore, the voltage and current received by each of the LED array chips will be fixed, so that the expected life time of each of the LEDs is substantially the same.

 In summary, the LED lighting device of the embodiment of the present invention separately disposes the LED array chip and the rectifying unit on different areas of the bottom plate. Therefore, when the rectifying element or the LED array chip is damaged, only the device needs to be The damaged electronic components are replaced, so it is easy to repair or refurbish. In addition, since the LED lighting device of the embodiment of the present invention is rectified by using a Wheatstone bridge composed of at least four rectifying elements, the rectified DC power signal can cause the LED arrays to continuously emit light. In this way, the luminous efficiency of the illumination device and the comprehensive uniform illumination effect can be increased.

 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit and scope of the present invention. The scope of the invention is defined by the scope of the appended claims.

Claims

Rights request  1. An LED lighting device comprising:  a bottom plate;  An LED array chip having a substrate and a plurality of light emitting diodes disposed on the substrate and electrically connected, each of the light emitting diodes having a plurality of semiconductor layers stacked on the substrate;  a rectifying unit electrically connected to the plurality of light emitting diodes, wherein the rectifying unit converts an alternating current power signal into a direct current power signal, so that the plurality of light emitting diodes receive the direct current power signal and emit a light source.  The rectifying unit and the LED array chip are disposed on different areas of the bottom plate. 2. The LED lighting device of claim 1, wherein the semiconductor layer of each of the light emitting diodes comprises an _n -type semiconductor layer, an active layer, and a p-type semiconductor layer, and is sequentially stacked on the substrate.  3. The LED lighting device of claim 1, wherein the semiconductor layer of each of the light emitting diodes comprises a p-type semiconductor layer, an active layer and an n-type semiconductor layer, and is sequentially stacked on the substrate.  The LED lighting device of claim 2 or 3, wherein each of the light emitting diodes further comprises a first pad formed on the n-type semiconductor layer, and a second pad formed on the p On the semiconductor layer.  The LED lighting device of claim 1, wherein the rectifying unit comprises a Wheatstone bridge composed of at least four rectifying elements, and each of the rectifying elements is disposed on the bottom plate.  The LED lighting device of claim 5, wherein each of the rectifying elements is fixed to the bottom plate by solder bonding or adhesive bonding.  The LED lighting device of claim 5, wherein the rectifying element is a Schottky barrier diode.  The LED lighting device of claim 5, wherein the rectifying element comprises a silicon semiconductor element or a III-V compound semiconductor element.  The LED lighting device of claim 5 , wherein the Wheatstone bridge comprises a first current path and a second current path, and a first rectifying element, the LED array chip and a third The rectifying elements are located on the first current path and are connected in series in series, and a fourth rectifying element, the LED array chip and a second rectifying element are located on the second current path and are connected in series in series. The LED lighting device of claim 9 , wherein the rectifying unit further comprises a first conductive pattern and a second conductive pattern respectively disposed on the bottom plate, wherein the first conductive pattern is electrically connected to the One end of the AC power signal and the first rectifying element and the second rectifying element, and the second conductive pattern is electrically connected to the other end of the AC power signal and the third rectifying element and the fourth rectifying element. The LED lighting device of claim 9 , wherein the rectifying unit further comprises a third conductive pattern and a fourth conductive pattern respectively disposed on the bottom plate, wherein the third conductive pattern is electrically connected to the An electrode of the LED array chip and the first rectifying component and the fourth rectifying component, wherein the fourth conductive pattern is electrically connected to the other electrode of the LED array chip and the second rectifying component and the third Rectifying component.  The LED lighting device of claim 1, wherein the material of the substrate comprises sapphire, silicon carbide, silicon, zinc oxide, gallium arsenide, and spinel.  13. The LED lighting device of claim 1, wherein the AC power signal is 90-120 volts, 180-240 volts, or 270-330 volts.  The LED lighting device of claim 1, wherein the plurality of light emitting diodes formed in the LED array chip are connected in series or in parallel.  The LED lighting device of claim 1, wherein the plurality of light emitting diodes formed in the LED array chip comprise series and parallel connections.  16. The LED lighting device of claim 1, wherein the bottom plate is constructed of a thermally conductive material. 17. The LED lighting device of claim 1, wherein the bottom plate is a circuit board, a silicon substrate, a ceramic substrate or a metal substrate.  The LED lighting device of claim 1 , wherein the bottom plate further comprises a heat dissipating block, wherein the light emitting diode array chip is disposed on the heat dissipating block to provide a heat dissipation path of the LED chip.  The LED lighting device of claim 18, wherein the bottom plate is a silicon substrate, a circuit board or a ceramic substrate.  The LED lighting device of claim 1 , wherein materials of the semiconductor layers of the plurality of light emitting diodes include gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, indium phosphide At least one of gallium aluminum, aluminum phosphide, gallium phosphide, indium phosphide, and gallium arsenide.  The LED lighting device of claim 20, wherein the semiconductor layer of the light emitting diode is formed by an epitaxial manner.  The LED lighting device of claim 1, wherein the LED array chip is fixed to the substrate by solder bonding or adhesive bonding.  The LED lighting device of claim 1, wherein the plurality of light emitting diodes formed in the LED array chip have the same wavelength or different wavelengths. 24. The LED lighting device of claim 1, wherein the LED array chip further comprises at least one phosphor material disposed on the plurality of LEDs. · The LED lighting device of claim 24, wherein the light emitted by the plurality of light emitting diodes is mixed with the light emitted by the phosphor material to form white light.  The LED lighting device of claim 25, wherein the light emitted by the plurality of light emitting diodes comprises blue light and ultraviolet light.  The LED lighting device of claim 26, wherein when the light emitted by the plurality of light emitting diodes is blue light, the phosphor material is a yellow phosphor or a red phosphor plus a green phosphor.  The LED lighting device of claim 26, wherein when the light emitted by the plurality of light emitting diodes is ultraviolet light, the phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus green phosphor The body is further added with a blue phosphor.  29. A light-emitting diode lighting device comprising:  An LED array chip having a substrate and a plurality of light emitting diodes disposed on the substrate and electrically connected, each of the light emitting diodes having a plurality of semiconductor layers stacked on the substrate;  a rectifying unit electrically connected to the plurality of light emitting diodes, wherein the rectifying unit converts an alternating current power signal into a direct current power signal, so that the plurality of light emitting diodes receive the direct current power signal and emit a light source.  Wherein the rectifying unit is not disposed on the substrate.  30. The LED lighting device of claim 29, wherein the rectifying unit comprises a Wheatstone bridge comprised of at least four rectifying elements, wherein each of the rectifying elements is not disposed on the substrate.  The LED lighting device of claim 29, wherein the semiconductor layer of each of the light emitting diodes comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer, and is sequentially stacked on the substrate.  32. The LED lighting device of claim 29, wherein the semiconductor layer of each of the light emitting diodes comprises a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and is sequentially stacked on the substrate.  The LED lighting device of claim 31 or 32, wherein each of the light emitting diodes further comprises a first pad formed on the n-type semiconductor layer, and a second pad formed on the p-type On the semiconductor layer.  34. The LED lighting device of claim 30, wherein the rectifying elements are Schottky barrier diodes.  The light emitting diode lighting device of claim 30, wherein the rectifying element comprises a silicon semiconductor element or a III-V compound semiconductor element. 36. The LED lighting device of claim 30, wherein the Wheatstone bridge comprises a first current path and a second current path, wherein a first rectifying element, the LED array chip and a third The rectifying component is located on the first current path and connected in series, and a fourth rectifying component, the LED array chip and a first The two rectifying elements are located on the second current path and are connected in series in series.  37. The LED lighting device of claim 29, wherein the material of the substrate comprises sapphire, silicon carbide, silicon, zinc oxide, gallium arsenide, and spinel.  38. The LED lighting device of claim 29, wherein the AC power signal is 90-120 volts, 180-240 volts, or 270-330 volts.  The light emitting diode lighting device of claim 29, wherein the plurality of light emitting diodes formed in the light emitting diode array chip are connected in series or in parallel.  40. The LED lighting device of claim 29, wherein the plurality of light emitting diodes formed in the LED array chip comprise series and parallel connections.  The LED lighting device of claim 29, wherein materials of the semiconductor layers of the plurality of light emitting diodes include gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, indium phosphide At least one of gallium aluminum, aluminum phosphide, gallium phosphide, indium phosphide, and gallium arsenide.  The LED lighting device of claim 41, wherein the semiconductor layer of the light emitting diode is formed by an epitaxial manner.  The light emitting diode lighting device of claim 29, wherein the plurality of light emitting diodes formed in the light emitting diode array chip are of the same wavelength or different wavelengths.  44. The LED lighting device of claim 29, wherein the LED array chip further comprises at least one phosphor material disposed on the plurality of light emitting diodes.  The LED lighting device of claim 44, wherein the light emitted by the plurality of light emitting diodes is mixed with the light emitted by the phosphor material to form white light.  46. The LED lighting device of claim 45, wherein the light emitted by the plurality of light emitting diodes comprises blue light and ultraviolet light.  The LED lighting device of claim 46, wherein when the light emitted by the plurality of light emitting diodes is blue light, the phosphor material is a yellow phosphor or a red phosphor plus a green phosphor.  The LED lighting device of claim 46, wherein when the light emitted by the plurality of light emitting diodes is ultraviolet light, the phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus green phosphor Add a blue light body to the body. 49. An LED array chip for receiving a DC power signal and emitting a light source, the LED array chip comprising: a substrate; A plurality of light emitting diodes are disposed on the substrate and electrically connected, and each of the light emitting diodes has a plurality of semiconductor layers stacked on the substrate.  The light emitting diode array chip according to claim 49, wherein the semiconductor layer of each of the light emitting diodes comprises an n-type semiconductor layer, an active layer and a p-type semiconductor layer, and is sequentially stacked on the substrate.  51. The LED lighting device of claim 49, wherein the semiconductor layer of each of the light emitting diodes comprises a p-type semiconductor layer, an active layer, and an n-type semiconductor layer, and is sequentially stacked on the substrate.  The LED array chip of claim 50 or claim 51, wherein each of the light emitting diodes further comprises a first pad formed on the n-type semiconductor layer, and a second solder pad formed on the p On the semiconductor layer.  52. The LED lighting device of claim 49, wherein materials of the semiconductor layers of the plurality of light emitting diodes include gallium nitride, aluminum gallium nitride, indium gallium nitride, aluminum indium gallium nitride, indium phosphide At least one of gallium aluminum, aluminum phosphide, gallium phosphide, indium phosphide, and gallium arsenide.  53. The LED array chip of claim 49, wherein the material of the substrate comprises sapphire, silicon carbide, silicon, zinc oxide, gallium arsenide, and spinel.  The light emitting diode array chip of claim 49, wherein the plurality of light emitting diodes are connected in series or in parallel.  The light emitting diode array chip of claim 49, wherein the plurality of light emitting diodes comprise a plurality of groups connected in parallel, wherein each of the groups has a plurality of the foregoing light emitting diodes connected in series.  The light emitting diode array chip of claim 49, wherein the plurality of light emitting diodes comprise a plurality of groups connected in series, wherein each group has a plurality of the foregoing light emitting diodes connected in parallel.  57. The LED array chip of claim 49, wherein the plurality of light emitting diodes comprises a plurality of first groups connected in series, wherein each first group has a plurality of second groups connected in parallel, each The two groups have a plurality of the aforementioned light emitting diodes connected in series.  58. The LED array chip of claim 49, wherein the plurality of light emitting diodes comprises at least a first group and a plurality of parallel connected second groups, the first group being connected in series with the plurality of second groups The first group has at least one of the aforementioned light emitting diodes connected in series, and the second group has at least one of the foregoing light emitting diodes connected in series.  The light emitting diode array chip of claim 49, wherein the plurality of light emitting diodes are of the same wavelength or different wavelengths.  60. The LED array chip of claim 49, further comprising providing at least one phosphor material on the plurality of light emitting diodes. 61. The LED array chip of claim 60, wherein the plurality of light emitting diodes emit light and The phosphor material is mixed with light emitted by the excitation to form white light.  The light emitting diode array chip of claim 61, wherein the light emitted by the plurality of light emitting diodes comprises blue light and ultraviolet light.  The light emitting diode array chip according to claim 62, wherein when the light emitted from the plurality of light emitting diodes is blue light, the phosphor material is a yellow phosphor or a red phosphor plus a green phosphor.  64. The LED array chip of claim 62, wherein when the light emitted by the plurality of light emitting diodes is ultraviolet light, the phosphor material is a yellow phosphor plus a blue phosphor or a red phosphor plus green phosphor The body is further added with a blue phosphor.