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WO2011010771A1 - Réserve pour lithographie par faisceau électronique, et procédé de développement d'une réserve pour lithographie par faisceau électronique - Google Patents

Réserve pour lithographie par faisceau électronique, et procédé de développement d'une réserve pour lithographie par faisceau électronique Download PDF

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Publication number
WO2011010771A1
WO2011010771A1 PCT/KR2009/005056 KR2009005056W WO2011010771A1 WO 2011010771 A1 WO2011010771 A1 WO 2011010771A1 KR 2009005056 W KR2009005056 W KR 2009005056W WO 2011010771 A1 WO2011010771 A1 WO 2011010771A1
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WO
WIPO (PCT)
Prior art keywords
formula
compound
resist
group
electron beam
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Ceased
Application number
PCT/KR2009/005056
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English (en)
Korean (ko)
Inventor
윤도영
김기범
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SNU R&DB Foundation
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SNU R&DB Foundation
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Publication of WO2011010771A1 publication Critical patent/WO2011010771A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

Definitions

  • the present invention relates to a resist for electron lithography, and more particularly to a resist for electron beam lithography and a method for developing resist for electron lithography with high sensitivity to an electron beam.
  • HSQChydrogen sisquioxane and HSQ is known to be able to form patterns of 30 nm or less that are superior to other chemically amplified negative resists.
  • HSQ is known to form a ring-shaped structure based on the Si-0—Si main chain, and is a structure in which hydrogen is bonded to a silicon atom and is all made of inorganic material.
  • the technical problem to be solved by the present invention is to provide a resist for electron lithography excellent in sensitivity and resolution for an electron crime.
  • Another technical problem to be solved by the present invention is to provide a method for developing a register for electron beam lithography.
  • the resist for electron lithography according to the present invention is a compound of formula 1, a compound of formula 2 and a compound of formula 3 A copolymer having a number average molecular weight of 500 to 30,000 formed by copolymerization is included. ⁇ Formula 1>
  • Formula 1 and Formula 2 to R 6 is any one selected from the group consisting of hydrogen, an alkyl group having 1 to 5 carbon atoms
  • 3 ⁇ 4 of Formula 1 is hydrogen, a hydroxyl group, an alkyl group having 1 to 5 carbon atoms, 1 carbon It is any one selected from the group consisting of alkoxy group of 5 to 5, haloalkylphenyl group of 7 to 12 carbon atoms, haloalkylphenylalkyl group of 8 to 18 carbon atoms
  • 3 ⁇ 4 of the formula (2) is a norbornyl group, a norbornyl alkyl group of 8 to 13 carbon atoms
  • R 7 to R 10 of the formula (3) is selected from the group consisting of alkoxy group of 1 to 5 carbon atoms, halogen Which one.
  • the compound of formula 1 is a compound of formula (4) ((p-chloromethyl) phenyltrimethoxysi lane)
  • the compound of formula 2 is a compound of formula (5) (((bicycloheptenyOethyl) triethoxysilane )
  • the compound of Chemical Formula 3 may be a compound of Chemical Formula 6 (tetraethoxysilane).
  • the electron beam lithography resist development method has a number average molecular weight of 500 to 30,000 formed by copolymerizing the compound of Formula 4, the compound of Formula 5 and the compound of Formula 6 Exposing the electron bomb to an electron beam lithography resist comprising a copolymer; And TMAH with the (tetramethyl ammonium hydroxide) aqueous solution, or IPA (isopropyl alcohol) to the developing solution (developer), further comprising: an electronic pan-lithography resist for exposure to the electron beam phenomenon (devek) P); have a.
  • the resist for electron beam lithography of the present invention When the resist for electron beam lithography of the present invention is used, it is possible to realize a line pattern having a line width of 20 nm or less when using a 100 keV lithography device with high sensitivity to electron ranges and high resolution. .
  • FIG. 1 is a graph showing the results of a resist characteristic evaluation performed using the electrochemical lithography resist of Example KCNT235) and Comparative Example (HSQ) of the present invention.
  • 2 and 3 are resists for electron lithography of Example 1 of the present invention.
  • Example 4 and 5 are resists for electron lithography of Example 2 of the present invention.
  • a resist for electron lithography according to the present invention is a compound of Formula 1,
  • 3 ⁇ 4 to 3 ⁇ 4 of Formula 1 and Formula 2 are any one selected from the group consisting of hydrogen, alkyl groups having 1 to 5 carbon atoms.
  • ⁇ is selected from the group consisting of hydrogen, a hydroxy group, an alkyl group having 1 to 5 carbon atoms, an alkoxy group having 1 to 5 carbon atoms, a haloalkylphenyl group having 7 to 12 carbon atoms, and a haloalkylphenylalkyl group having 8 to 18 carbon atoms
  • One, 3 ⁇ 4 of Formula 2 is any one selected from the group consisting of a norbornyl group, a norbornelalkyl group having 8 to 13 carbon atoms, a norbornenyl group, a norbornenylalkyl group having 8 to 13 carbon atoms.
  • R 7 to R 10 of the formula (3) is any one selected from the group consisting of an alkoxy group having 1 to 5 carbon atoms, a halogen element.
  • the ratio of the repeating unit derived from the compound of formula (1), the repeating unit derived from the compound of formula (2) and the repeating unit derived from the compound of formula (3) is This may be somewhat different from the ratio you put in. This is due to the reaction properties of each functional group and its affinity with water.
  • Affected by affinity For example, in the case of a copolymer containing a lot of relatively hydrophobic monomers containing a functional group such as a phenyl group or a norbornenyl group, the hydrophobicity is high. Phosphorus monomers can participate in a relatively small amount of reaction and contain a relatively small fraction of repeating units.
  • the compound of Formula 1 in copolymerizing the compound of Formula 1, the compound of Formula 2 and the compound of Formula 3, the compound of Formula 1 may be a compound of Formula 4 ((P-chloromethyUphenyltrimethoxysilane). It may be a compound of (((bicycloheptenyl) ethyl riethoxysilane), the compound of Formula 3 may be a compound of Formula 6 0 ⁇ 3 1 ⁇ 13 ⁇ .
  • a copolymer formed by co-polymerizing a compound of formula (4), a compound of formula (5) and a compound of formula (6) It is preferable that the molar ratio of the repeating unit of a compound is 0.5-2. And it is preferable that the molar ratio of the repeating unit of the compound of Formula 6 with respect to the repeating unit of the compound of Formula 5 contained in a copolymer is 0.5-5.
  • the register for electron beam lithography named CNT235 do.
  • (mole number of repeating units of the compound of Formula 4): (mole number of repeating units of the compound of Formula 5): (mole number of repeating units of the compound of Formula 6) 5: 3: 2: A resist for electron beam lithography with CNT532 Name it.
  • the resist for electron lithography is used to form a pattern. To form the pattern, the resist for electron lithography is exposed to the electron crime and then developed to form a pattern.
  • the resist for electron beam lithography comprising a copolymer having a compound of Formula 4, a compound of Formula 5, and a compound of Formula 6 having a number average molecular weight of about 500 to about 30,000 is an aqueous solution of TMAH tetramethyladium onium hydroxide) or IPACisopropyl alcohol. Is developed using the developer.
  • the developer may be a TMAH aqueous solution, preferably Uses a TMAH aqueous solution having a concentration in the range from 1 to 25% by weight.
  • a resist for electron beam lithography designated CNT 235
  • CNT 235 can be developed using a 2.5 wt% aqueous solution of TMAH.
  • a molar ratio of the repeating unit of the compound of Formula 4 to the repeating unit of the compound of Formula 5 in the copolymer formed by copolymerizing the compound of Formula 4, the compound of Formula 5, and the compound of Formula 6 is 1.5. 2 to 2, and when the molar ratio of the repeating unit of the compound of formula 6 to the repeating unit of the compound of formula 5 included in the copolymer is 0.5 to 1, the developer may use IPA.
  • a resist for electron beam lithography designated CNT 532, can be developed using IPA.
  • the resist for electron lithography according to the present invention can be developed cleanly by using an appropriate developer according to the molar ratio of the repeating unit of each compound included in the copolymer.
  • an electron beam lithography resist may be developed under optimum conditions.
  • the resist for electron lithography according to the present invention has a number average molecular weight of about 500 to about 30,000. Since the number average molecular weight can be easily measured using a gel permeation chromatography method well known in the art, the measurement method is not described in detail.
  • the number average molecular weight of the electron beam lithography resist according to the present invention preferably has a value in the range of 1000 to 5000, the sensitivity is worse when the number average molecular weight is less than 1000, the sensitivity is good when the number average molecular weight exceeds 5000.
  • it is disadvantageous in terms of resolution because of the large size of the polymer.
  • the weight average molecular weight is also almost the same as the range of the number average molecular weight.
  • the polydispersity may be 1 to 1.3.
  • a hydroxyl group may be formed at the terminal of the resist for electron lithography according to the present invention, and the molar ratio of the hydroxyl group to the functional group formed on the entire terminal of the resist for electron lithography may be 50% or less.
  • the compound of Formula 1 and the compound of Formula 2 are added together with a solvent, and then the acid or base is added as a catalyst and stirred. Can be.
  • the solvent is alcohol (methanol, ethane, isopropyl alcohol, n-propyl alcohol, butyl alcohol), dimethylacetamide (DMAc), dimethylformamide, dimethyl sulfoxide (DMS0), N-methylpyrrolidone, tetrahydro Organic solvents such as furan (THF) and water may be used but are not limited thereto.
  • the weight ratio of the reaction product (compound of Formula 1, compound of Formula 2 and compound of Formula 3) and the solvent is not particularly limited, but, for example, the concentration of the reaction product may be selected in the range of 20 to.
  • the acid / base catalyst all of the acid / base catalysts used in general sol-gel reaction can be used. More specifically, as the acid catalyst, inorganic acids such as hydrochloric acid, sulfuric acid, and nitric acid, P-luluene-sulfonic acid, etc. The same organic acid may be used, and as the base catalyst, tetramethylammonium hydroxide (TMAH), tetrabutylammonium hydroxide (TBuAOH), NaOH, sodium carbonate, triethylamine, di-n-propylamine and the like can be used. However, not limited to this, other acid / base catalysts may also be used. The content of the acid / base catalyst may be 0.005 to 0.3 mol based on 1 mol of the total reactant.
  • TMAH tetramethylammonium hydroxide
  • TuAOH tetrabutylammonium hydroxide
  • NaOH sodium carbonate
  • triethylamine di-n-
  • Preferred temperatures of the copolymerization reaction may be selected at appropriately elevated temperatures, but may be carried out, for example, at temperatures of 40 ° C. to 90 ° C., and at a range of 50 ” C to 70 ° C. And the preferred reaction time of the copolymerization reaction may be from about 1 hour to about 10 hours, preferably 3 to 6 hours.
  • the product of the copolymerization reaction can be separated, for example, by phase separation and drying.
  • the compound of formula 4 ((P-ch 1 or ome t hy 1) heny 11 ri me t hoxy si 1 ane, pCMPTMS), the compound of formula 5 (((bicycloheptenyl) ethyDtriethoxysilane, BHET) and a compound of formula 6 (tetraethoxysilane, TE0S) were co-condensed.
  • the internal pressure is adjusted to 1 atm.
  • pCMPTMS, BHET, and TE0S as monomers are added to the reaction vessel so that the molar ratio is 2: 3: 5.
  • Tetrahydrofuran (THF) was added so that the concentration of the semi-aungmul (pCMPTMS, BHET and TE0S) was 40%.
  • hydrochloric acid to be used as a catalyst was quantified so that the molar ratio of the monomer to 0.03, and the molar ratio of water and the semiungmul (pCMPTMS, BHET and TE0S) was fixed to 3 and reacted at 60 ° C for 4 hours.
  • the catalyst was removed by phase separation using an ether / water charge, and the water in the remaining ether layer was removed with a sulfate of magnesium sulfate (MgSO), and ether was removed using a rotary vaC uum evaporator. Removal gave product.
  • MgSO magnesium sulfate
  • the reaction product was obtained in the same manner as in Example 1 except that the molar ratio of pCMPTMS, BHET and TE0S as monomers was set to 5: 3: 2.
  • the baking process is not performed, and an electron beam lithography apparatus with an accelerating voltage of 19 keV is used to apply a square pattern of 50 ⁇ m each to the coated thin film using a current of 800 pA, and an exposure amount of 5 to 900 iiC / cm. 35 by adjusting in the range of 2 and the thickness of the remaining thin film through the development process was measured to obtain the results as shown in the graph of FIG.
  • the developer was used 25% by weight TMAH aqueous solution. The part not exposed to the electron beam was dissolved and disappeared in the developer, and the exposed part remained negative type resist property.
  • FIG. 2 and 3 show a case where CNT 235 (Example 1) is used as a resist for electron lithography
  • FIG. 2 is a line-and-line having a line width of 38 nm with an electron exposure dose of 900 uC / cm 2
  • FIG. 3 is an electron micrograph showing the line-and-space having a line width of 28 nm with an electron exposure dose of 1000 iiC / cm 2 .
  • CNT 532 (Example 2) used as an electron beam lithography resist
  • Figure 4 is an electron micrograph showing a line-and-space having a line width of 21 nm with an electron beam exposure of 900 yC / cm 2
  • 5 is an electron micrograph showing a line-and-space having a line width of 17 nm with an electron beam exposure of 3000 uC / cm 2
  • CNT 235 (Example 1)
  • CNT 532 (Example 2) was developed with IPA.
  • the resist for electron lithography according to the present invention has excellent sensitivity and excellent resolution as compared with the conventional HSQ, and can easily form a line pattern having a line width of 30 nm or less.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)

Abstract

L'invention concerne une réserve pour lithographie par faisceau électronique qui présente une excellente sensibilité à un faisceau électronique et une bonne résolution, et un procédé permettant de développer la réserve pour lithographie par faisceau électronique. La réserve pour lithographie par faisceau électronique selon la présente invention comprend un copolymère qui est formé par copolymérisation d'un composé de formule 1, d'un composé de formule 2 et d'un composé de formule 3, et présente un poids moléculaire moyen compris entre 500 et 30 000.
PCT/KR2009/005056 2009-07-20 2009-09-07 Réserve pour lithographie par faisceau électronique, et procédé de développement d'une réserve pour lithographie par faisceau électronique Ceased WO2011010771A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090065767A KR101036803B1 (ko) 2009-07-20 2009-07-20 전자빔 리소그라피용 레지스트 및 전자빔 리소그라피용 레지스트 현상방법
KR10-2009-0065767 2009-07-20

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Publication Number Publication Date
WO2011010771A1 true WO2011010771A1 (fr) 2011-01-27

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001037049A1 (fr) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co., Ltd. Composition photosensible, element a guide d'onde optique et procede de production dudit element
US6303268B1 (en) * 1997-08-14 2001-10-16 Showa Denko K.K. Resist resin, resist resin composition and method of forming pattern using resist resin and resist resin composition
US20030219973A1 (en) * 2002-04-02 2003-11-27 Townsend Paul H. Tri-layer masking architecture for patterning dual damascene interconnects
US20060073413A1 (en) * 2004-10-05 2006-04-06 Shin-Etsu Chemical Co., Ltd. Silicon-containing resist composition and patterning process
US20060293478A1 (en) * 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0686680A4 (fr) 1993-12-27 1996-07-24 Kawasaki Steel Co Film isolant pour dispositifs a semi-conducteurs, fluide de revetement utilise pour former le film et procede de production dudit film
JP5110238B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP4355939B2 (ja) 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6303268B1 (en) * 1997-08-14 2001-10-16 Showa Denko K.K. Resist resin, resist resin composition and method of forming pattern using resist resin and resist resin composition
WO2001037049A1 (fr) * 1999-11-12 2001-05-25 Nippon Sheet Glass Co., Ltd. Composition photosensible, element a guide d'onde optique et procede de production dudit element
US20030219973A1 (en) * 2002-04-02 2003-11-27 Townsend Paul H. Tri-layer masking architecture for patterning dual damascene interconnects
US20060073413A1 (en) * 2004-10-05 2006-04-06 Shin-Etsu Chemical Co., Ltd. Silicon-containing resist composition and patterning process
US20060293478A1 (en) * 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics

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KR101036803B1 (ko) 2011-05-25
KR20110008416A (ko) 2011-01-27

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