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WO2011009017A3 - Process for the formation of silicon metal sheets - Google Patents

Process for the formation of silicon metal sheets Download PDF

Info

Publication number
WO2011009017A3
WO2011009017A3 PCT/US2010/042212 US2010042212W WO2011009017A3 WO 2011009017 A3 WO2011009017 A3 WO 2011009017A3 US 2010042212 W US2010042212 W US 2010042212W WO 2011009017 A3 WO2011009017 A3 WO 2011009017A3
Authority
WO
WIPO (PCT)
Prior art keywords
silicon metal
coating
salt
formation
metal sheets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/042212
Other languages
French (fr)
Other versions
WO2011009017A2 (en
Inventor
Andrew Matheson
John W. Koenitzer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boston Silicon Materials LLC
Original Assignee
Boston Silicon Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boston Silicon Materials LLC filed Critical Boston Silicon Materials LLC
Publication of WO2011009017A2 publication Critical patent/WO2011009017A2/en
Publication of WO2011009017A3 publication Critical patent/WO2011009017A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

The invention relates to the manufacture of silicon metal sheets. First, silicon metal is produced in the form of a metal powder encapsulated in a salt or salts. The salt-coated particles are then applied to a substrate, and then the salt coating can be removed to leave a coating of silicon metal powder (which can be sintered to form a sheet or coating), or a coating of silicon metal if the salt removal is accomplished at high enough temperatures to sinter the silicon metal within the salt coating.
PCT/US2010/042212 2009-07-17 2010-07-16 Process for the formation of silicon metal sheets Ceased WO2011009017A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22637109P 2009-07-17 2009-07-17
US61/226,371 2009-07-17

Publications (2)

Publication Number Publication Date
WO2011009017A2 WO2011009017A2 (en) 2011-01-20
WO2011009017A3 true WO2011009017A3 (en) 2011-05-19

Family

ID=43450227

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/042212 Ceased WO2011009017A2 (en) 2009-07-17 2010-07-16 Process for the formation of silicon metal sheets

Country Status (1)

Country Link
WO (1) WO2011009017A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
JP2003171556A (en) * 2001-12-10 2003-06-20 Jsr Corp Method for forming silicon film and composition therefor
JP2006240963A (en) * 2005-03-07 2006-09-14 Nippon Steel Corp Method for producing high purity silicon
JP2007173516A (en) * 2005-12-22 2007-07-05 Kagawa Univ Silicon fine particles, production method thereof, solar cell using the same, and production method thereof
WO2009018425A1 (en) * 2007-08-01 2009-02-05 Boston Silicon Materials Llc Process for the production of high purity elemental silicon

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4239740A (en) * 1979-05-25 1980-12-16 Westinghouse Electric Corp. Production of high purity silicon by a heterogeneous arc heater reduction
JP2003171556A (en) * 2001-12-10 2003-06-20 Jsr Corp Method for forming silicon film and composition therefor
JP2006240963A (en) * 2005-03-07 2006-09-14 Nippon Steel Corp Method for producing high purity silicon
JP2007173516A (en) * 2005-12-22 2007-07-05 Kagawa Univ Silicon fine particles, production method thereof, solar cell using the same, and production method thereof
WO2009018425A1 (en) * 2007-08-01 2009-02-05 Boston Silicon Materials Llc Process for the production of high purity elemental silicon

Also Published As

Publication number Publication date
WO2011009017A2 (en) 2011-01-20

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