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WO2011003594A1 - Circuit d'électronique organique - Google Patents

Circuit d'électronique organique Download PDF

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Publication number
WO2011003594A1
WO2011003594A1 PCT/EP2010/004123 EP2010004123W WO2011003594A1 WO 2011003594 A1 WO2011003594 A1 WO 2011003594A1 EP 2010004123 W EP2010004123 W EP 2010004123W WO 2011003594 A1 WO2011003594 A1 WO 2011003594A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic
electronic circuit
circuit according
electrically conductive
dielectric layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/004123
Other languages
German (de)
English (en)
Inventor
Andreas Ullmann
Thomas Herbst
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PolyIC GmbH and Co KG
Original Assignee
PolyIC GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PolyIC GmbH and Co KG filed Critical PolyIC GmbH and Co KG
Priority to EP10736983A priority Critical patent/EP2452340A1/fr
Publication of WO2011003594A1 publication Critical patent/WO2011003594A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00

Definitions

  • the invention relates to an organic-electronic circuit in the form of a
  • RFID transponders can be used to label products, for example as a sticker-on price tag or as a product identification label. These RFID transponders serve to protect the products.
  • RFID Radio Frequency Identification
  • Transponders can also be used to protect and / or identify documents.
  • the organic-electronic circuits have a high flexibility and a small size, in particular flat design, while still being mechanically durable. These organic electronic circuits are mass-produced products.
  • the organic-electronic circuits exhibit in the
  • the present invention has for its object to provide an improved organic electronic circuit.
  • the object of the invention is achieved by an organic-electronic circuit in the form of a film body, it being provided that the organic-electronic circuit, a carrier film, a first and a second electrically conductive
  • the one or more dielectric layers are formed as electrical insulating layers, that in the first and in the second electrically conductive functional layer in each case one or more electrodes for one or more organic components are formed such that one of the one or more electrodes of the the first electrically conductive functional layer and one of the one or more electrodes of the second electrically conductive functional layer are arranged in regions overlapping and are formed as electrode plates of a memory cell, and that between the electrode plates, the ferroelectric layer and the one or more dielectric layers are arranged to form the memory cell, being in the range of
  • the one or more dielectric layers are formed over the entire surface.
  • Embodiments of the organic-electronic circuit with one or more dielectric layers, which are arranged between one of the two electrically conductive functional layer and the ferroelectric layer in the overlapping region of the first and the second electrically conductive functional layer and which are designed to be electrically insulating, have improved memory properties.
  • the one or more dielectric layers, which are electrically insulating, reduce the risk of production-related faulty
  • the ferroelectric Layer is preferably formed very thin, and therefore, for example, when winding and unrolling in a roll-to-roll manufacturing process by mechanical stress in the manufacturing process, relatively easily damaged. As leakage is understood here that a short-circuit current through the
  • the one or more dielectric layers improve the mechanical strength of the organic electronic circuit even during the production of the electronic electronic circuit.
  • the one or more dielectric layers, as an integral part of the organic-electronic circuit can thus function in particular as mechanical protective layers of the ferroelectric layer, and as in particular mechanical protective layers of further layers and / or functional layers of the organic-electronic circuit. That the one or more dielectric layers provide protection to the underlying electrodes. For example, when scratches occur in the ferroelectric layer, the underlying electrodes are provided with a protective layer, i. the one or more dielectric layers, covered. Further, with the one or more dielectric layers during manufacture of the organic electronic circuit of the present invention, as well
  • Form surface of the one or more dielectric layers For the production of the organic-electronic circuit technologies such as printing, doctoring or sputtering can be used, the extensive
  • the mass production of the electronic-organic circuit by means of a roll-to-roll process. Furthermore, it has been found that the organic-electronic contacts produced by means of such a production technology for the usual contacting
  • Circuits used conductive adhesive to mechanically prone galvanic
  • Inventive memory cell comprising the first and the second, partially overlapping, electrically conductive functional layer with interposed ferroelectric layer and one or more
  • the one or more electrodes formed in the first and second electrically conductive functional layers may be as
  • Electrodes of one or more organic components such as organic field effect transistors and / or organic diodes serve.
  • organic field effect transistors and / or organic diodes serve.
  • the organic-electronic circuit electrically semiconducting
  • the organic-electronic circuit according to the invention is not only advantageous by an improved manufacturing process, but also has improved reliability. That the probability that, for example, faulty ferroelectric layers occur, which lead to leakage currents in the memory cell and this is unusable, is reduced.
  • the organic-electronic circuit has one or more organic components, which differ fundamentally in the materials and manufacturing processes used from a silicon chip commonly used for integrated circuits.
  • the organic-electronic circuit may have one or more electrically semiconducting and / or electrically insulating functional layers.
  • the electrically conductive, electrical Semiconducting and / or electrically insulating functional layers, as well as the one or more dielectric layers and the ferroelectric layer of this organic-electronic circuit is formed by layers of a multilayer film body. These layers can be applied by printing, knife coating, vapor deposition or sputtering.
  • the electrically conductive, semiconducting and / or insulating functional layers, as well as the ferroelectric layer and the dielectric layers of the organic electronic circuit are in contrast to a silicon chip on a flexible carrier substrate, ie a carrier film, comprising one or more plastic films and / or Paper of a thickness of preferably 10 .mu.m to 100 .mu.m, constructed.
  • This carrier film thus forms the carrier substrate of the integrated electronic-organic circuit instead of a silicon dioxide plate in an integrated electronic circuit formed by a silicon chip.
  • Ferroelectric layers of this organic-electronic circuit are preferably applied in a solution and can thus be applied for example by printing, spraying, knife coating and / or casting.
  • the material of a layer applied in solution and / or functional layer is insoluble in the material of another layer applied in solution and / or
  • the solution-applied layer and / or functional layer is preferably formed adjacent to the other solution-applied layer and / or functional layer.
  • Circuit counteracts by means of inventively arranged one or more dielectric layers leakage in the ferroelectric layer, which occur for example by different drying properties of the first and / or second electrically conductive functional layer and the ferroelectric layer, because the one or more dielectric layers facing the ferroelectric layer the first and / or the second electrically conductive
  • Insulate functional layer electrically. Possible leaks due to an unwanted or production-related dewetting of the ferroelectric layer do not influence the organic-electronic circuits according to the invention Functioning of the organic-electronic circuit. It is also possible that the leaks due to contamination, for example by particles, the
  • Suitable materials for semiconducting functional layers are preferably semiconductive functional polymers, such as polythiophene, polyterthiophene, polyfluorene, pentacene, tetracenes, oligothiophene, embedded in angoranic silicon in a polymer matrix, nano-silicon or polyarylamine, but also inorganic materials, which may be dissolved or sputtered or vapor deposition can be applied, for example ZnO, a-Si.
  • semiconductive functional polymers such as polythiophene, polyterthiophene, polyfluorene, pentacene, tetracenes, oligothiophene, embedded in angoranic silicon in a polymer matrix, nano-silicon or polyarylamine, but also inorganic materials, which may be dissolved or sputtered or vapor deposition can be applied, for example ZnO, a-Si.
  • An organic or organically electronic component is understood here as an electrical component which consists predominantly of organic material, in particular of at least 90% by weight of organic material.
  • a single organic component consists of different layer layers with an electrical function, in particular in the form of non-self-supporting, thin layers, and furthermore at least from the regions of a carrier substrate that can be assigned to the layer layers, i. the carrier film, together, on which the layer layers are located.
  • the individual layer layers can be formed from organic or inorganic material, it being possible to use only organic, only inorganic, or organic and inorganic layer layers in combination for forming an organic component.
  • an electrical component comprising an organic carrier foil and exclusively inorganic
  • the one or more dielectric layers have a relative dielectric constant less than 10,
  • the one or more dielectric layers have an electrical conductivity that is less than
  • the electrical conductivity of the one or more dielectric layers is less than 50 ⁇ S / cm or 10 ⁇ S / cm.
  • a particularly low conductivity of the one or more dielectric layers favors their electrical insulation properties if these one or more dielectric layers have a very small thickness of, for example, less than 50 nm.
  • the organic-electronic circuit has two dielectric layers.
  • the ferroelectric layer is arranged and / or embedded between the two dielectric layers.5
  • the ferroelectric layer is particularly protected against mechanical influences, such as abrasion, scratching, dust particles in the manufacturing process.
  • the one or more dielectric layers cover the first electrically conductive functional layer over the entire surface. It it is also possible that the one or more dielectric layers the
  • one or more dielectric layers cover the entire surface of the second electrically conductive functional layer.
  • the one or more dielectric layers are on one surface of the first electrically conductive
  • the one or more dielectric layers are formed on a surface of the second electrically conductive functional layer.
  • the one or more dielectric layers having a layer thickness of 5nm to 100nm, of
  • the one or more dielectric layers consist of one or more materials selected from the group consisting of silicon oxides, cerium oxides, inorganic electrically insulating elements and metal oxide compounds.
  • the one or more dielectric layers consist of a tough plastic lacquer and / or a tough plastic foil.
  • the one or more dielectric layers are mechanically stable.
  • mechanically stable is meant that the one or more dielectric layers are insensitive to mechanical external influences, such as deformation or scratching. Ie the one or a plurality of dielectric layers are preferably flexible, in particular due to their layer thickness, not mechanically deformable or deformable.
  • the dielectric has a hardness greater than or equal to that of glass and / or silica, or a Mohs hardness of at least 7.
  • the ferroelectric layer in particular during its application, the underlying dielectric layer mechanically damaged, whereby the production rejection rate can be significantly reduced.
  • the one or more dielectric layers are made of a material which is insoluble in the material and / or in the solvent of the ferroelectric layer.
  • the ferroelectric layer is made of a material having a high relative dielectric constant of 5 to 10,000, preferably 5 to 10.
  • the memory cell it is possible for the memory cell to function as an electrical capacitor, preferably with a high volume capacity.
  • the ferroelectric layer is formed with a layer thickness of 50 nm to 250 nm, preferably 75 nm to 150 nm.
  • the organic-electronic circuit has two or more ferroelectric layers.
  • Organic electronic circuit with two or more ferroelectric layers allow the realization of complex circuit with memory functionality over organic-electronic circuit with only one ferroelectric layer.
  • PVDF Polyvinylidene fluoride
  • PVF3 copolymers of PVDF with trifluoroethylene
  • the organic-electronic circuit has one or more contact reinforcements.
  • the one or more contact reinforcements are formed on the first electrically conductive functional layer. It can be provided that the one or more
  • Contact reinforcements have been particularly reinforced when the first and / or the second electrically conductive functional layer are completely covered by the one or more dielectric layers, because contact reinforcements enable a simple electrical contacting of the first and / or the second electrically conductive functional layer.
  • the one or more contact reinforcements are made of one or more materials selected from the group consisting of carbon black, carbon black / graphite, conductive silver paste, particle-based electrically conductive material.
  • the one or more contact reinforcements have a multiplicity of electrically conductive particles incorporated into a binder matrix. It can be provided that the one or a plurality of contact reinforcements are formed by a printing method.
  • the material of the one or more contact reinforcements comprises mass fractions of at least 30%, preferably 30% to 70%, of the plurality of electrically conductive particles, preferably providing mass fractions of 20% to 70% of material of the binder matrix are.
  • the particles of the plurality of electrically conductive particles have a particle size of 500 nm to 5 ⁇ m.
  • the particle size of the particles of the plurality of electrically conductive particles is preferably 1 ⁇ m.
  • the particles of the plurality of electrically conductive particles are rod-shaped, plate-shaped, star-shaped.
  • the particles of the plurality of electrically conductive particles may be formed as concave polyhedra.
  • the binder upon drying and / or curing, reduces its volume such that the plurality of electrically conductive particles form a surface having a rough surface structure of the one or more contact reinforcements. That the surface of the contact reinforcement has a roughness.
  • Layer thickness of the one or more contact reinforcements allows reliable through-connection of the one or more dielectric layers.
  • the one or more contact reinforcements allows reliable through-connection of the one or more dielectric layers.
  • Contact reinforcements each formed with a layer thickness of 500 nm to 5 .mu.m.
  • the one or more contact reinforcements are each formed with a layer thickness of 2 ⁇ m.
  • the one or more contact reinforcements have a surface with a high roughness.
  • the roughness of the surface has a value of 500 nm to 4 ⁇ m.
  • the roughness of the surface preferably has a value of 1 ⁇ m.
  • the roughness of the surface can be determined by a measuring method. As a measuring method for
  • Determination of surface roughness has been evaluated by surface profilometers, such as a Dektak.
  • the organic-electronic circuit has two or more organic components. At least two of the two or more organic components have a different type of component from each other.
  • the first and the second electrically conductive functional layer, the ferroelectric layer and / or the one or more dielectric layers by means of a printing process on the
  • the printing process may be a roll-to-roll printing process.
  • the one or more dielectric layers are one or more electrically insulating ones applied full-surface layers.
  • the organic-electronic circuit has a further dielectric layers.
  • the further dielectric layer is designed to be electrically insulating.
  • the further dielectric layer is applied over the whole surface on a side of the organic electronic circuit opposite the carrier foil.
  • the further dielectric layer can be applied as a final layer, for example by vapor deposition.
  • the further dielectric layer is made of a silicon oxide,
  • the further dielectric layer may function as a protective layer, and in particular the
  • Fingerprints which are present in any contact with the organic-electronic circuit, prevents leakage currents caused by the further dielectric layer. In particular, this prevents further dielectric layer in regions of the organic-electronic circuit, in which electrodes or conductor tracks
  • the further dielectric layer is applied over the entire area, but that the further dielectric layer is at most partially formed in the region of the one or more contact reinforcements.
  • the partial formation of the further dielectric layer is due to the high
  • FIG. 1 shows a schematic sectional view of a first embodiment of an organic-electronic circuit according to the invention.
  • Figure 2 shows a schematic sectional view of a second embodiment of an organic-electronic circuit according to the invention.
  • FIG. 1 shows a schematic sectional view of a first embodiment of an organic-electronic circuit according to the invention.
  • the organic-electronic circuit is in the form of a film body.
  • the organic electronic circuit has a plurality of functional layers, also referred to as layers for short.
  • the organic-electronic circuit has on a carrier film 1 in successive order a first electrically conductive functional layer 2, a contact reinforcement 4, a dielectric layer 3, a ferroelectric layer 5 and a second electrically conductive functional layer 6 arranged on each other.
  • the organic-electronic circuit may have electrically semiconducting functional layers.
  • the carrier film preferably consists of PET and has a preferred layer thickness of 50 ⁇ m.
  • the first electrically conductive functional layer 2 is preferably made of copper and has a preferred layer thickness of 40 nm. In the first electrically conductive functional layer 2, one or more electrodes for one or more organic components are formed.
  • the contact reinforcement 4 is arranged on the surface of the first electrically conductive functional layer 2.
  • the contact reinforcements 4 is preferably made of carbon black.
  • the contact reinforcement 4 has a multiplicity of electrically conductive particles incorporated in a binder matrix.
  • the electrically conductive particles have a particle size of 1 ⁇ m. After a drying process or curing process, the contact reinforcement 4 has a relatively rough
  • the dielectric layer 3 is formed as electrical insulating layers.
  • the dielectric layer 3 is preferably made of a highly insulating material.
  • the dielectric layer 3 is formed with a preferred layer thickness of 50 nm. In particular, the dielectric layer 3 has a small relative
  • the dielectric layer 3 covers the carrier film 1 and the first electrically conductive functional layer 2 over the entire surface.
  • Full-surface coverage of a surface of a layer here means that the area of the surface of the layer not already covered by another layer is completely covered.
  • the dielectric layer 3 is applied over the entire surface, for example by vapor deposition. The high roughness of the surface of the
  • the contact reinforcement 4 through the dielectric layer 3.
  • the contact reinforcement 4 has portions on its surface which are free of the dielectric layer 3.
  • the contact reinforcement 4 is thus at most partially covered by the dielectric layer 3, and therefore the contact reinforcement 4 allows electrical contacting of the first electrically conductive functional layer 2 by the
  • Dielectric layer 3 Dielectric layer 3 through ..
  • the contact reinforcement 4 allows a
  • the ferroelectric layer 5 preferably consists, for example, of PVDF and has a preferred layer thickness of 120 nm. The ferroelectric layer 5 covers the contact reinforcement 5 and the dielectric layer 3. The high roughness of the
  • Contact reinforcement 4 can be completely covered with the ferroelectric layer 5. Thus, contacting the first electrically conductive functional layer 2 is possible.
  • the second electrically conductive functional layer 6 is preferably made of copper and has a preferred layer thickness of 40 nm.
  • one or more electrodes are for one or more
  • Electrodes of the second electrically conductive functional layer 6 are arranged overlapping in regions and shaped as electrode plates of a memory cell 7.
  • the memory cell 7 can be, for example, a component of a Ferroelectric Random Access Memory.
  • ferroelectric layer 5 has a dielectric constant of
  • the memory cell 7 can also be used as a capacitor, i. as a storage cell for an electrical charge, act.
  • the one or more organic components may be components selected from the group memory cell, capacitor, field effect transistor and / or organic diodes. Further, it is possible that the organic electronic circuit comprises two or more organic components, wherein at least two of the two or more organic components have a mutually different type of component.
  • no RFID chip have the organic-electronic circuit according to the invention.
  • the organic-electronic circuit is preferably produced by one of the methods described above, in particular a printing method in a roll-to-roll printing method. But it can also be provided that one or more layers are laminated together.
  • FIG. 2 shows a schematic sectional view of a second embodiment of an organic-electronic circuit according to the invention.
  • the second embodiment of the organic-electronic circuit according to the invention shown in Figure 2 is similar to the first embodiment of an organic-electronic circuit according to the invention shown in Figure 1 formed.
  • the second embodiment of the organic-electronic circuit according to the invention has only one further dielectric layer 3 ' .
  • the further dielectric layer 3 ' is preferably formed from the same material and with the same layer thickness as the dielectric layer 3. However, it can also be provided that the further dielectric layer 3 'is formed from a different material and / or with a different layer thickness than the dielectric layer 3.
  • the further dielectric layer 3 ' preferably consists of a layer thickness of 5 nm to 50 nm of Cerox.
  • the further dielectric layer 3 ' completely covers the dielectric layer 3 and the ferroelectric layer 5.
  • the further dielectric layer 3 ' is applied over the entire surface, for example by vapor deposition.
  • the contact reinforcement 4 allows at most a partial formation of the further dielectric layer 3 'on the contact reinforcement 4 due to its high surface roughness.
  • the contact reinforcement 4 has a higher roughness of the surface of the contact reinforcement compared to the contact reinforcement of the first embodiment of the organic-electronic circuit. This higher roughness of the surface of the Contact reinforcement 4 prevents the contact reinforcement 4 from being completely covered with the further dielectric layer 3 '.
  • the further dielectric layer 3 ' is arranged between the ferroelectric layer 5 and the second electrically conductive functional layer 6.
  • the ferroelectric layer 5 is embedded between the dielectric layer 3 and the further dielectric layer 3 '.
  • an improved quality of the organic electronic circuit By embedding the ferroelectric layer 5 between the dielectric layer 3 and the further dielectric layer 3 ' , in particular the organic electronic circuit of the second embodiment compared to the organic electronic circuit of the first embodiment, an improved quality of the organic electronic circuit, improved mechanical strength, including improved tolerance in case of deviation from an optimally running manufacturing process.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

L'invention concerne un circuit d'électronique organique sous forme d'un corps en feuille. Le circuit d'électronique organique comprend une feuille support (1), une première et une seconde couche fonctionnelle électro-conductrice (2, 6), une couche ferro-électrique (5) et une ou plusieurs couches diélectriques (3, 3'). La couche ou les couches diélectriques (3, 3') sont configurées en tant que couches électriquement isolantes. Dans la première et dans la seconde couche fonctionnelle électro-conductrice (2, 6), une ou plusieurs électrodes sont formées, dans chacune de ces couches, pour un ou plusieurs composants organiques. L'une desdites électrodes de la première couche fonctionnelle électro-conductrice (2), et l'une desdites électrodes de la seconde couche fonctionnelle électro-conductrice (6) sont disposées, partiellement en se chevauchant, et sont formées en tant que plaquettes d'électrodes d'une cellule mémoire (7). La couche ferro-électrique (5) et la couche ou les couches diélectriques (3, 3') sont disposées entre les plaquettes d'électrodes, avec formation de la cellule mémoire (7). Dans la zone des plaquettes où les électrodes se chevauchent, une ou plusieurs couches diélectriques sont formées sur toute la surface.
PCT/EP2010/004123 2009-07-09 2010-07-06 Circuit d'électronique organique Ceased WO2011003594A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10736983A EP2452340A1 (fr) 2009-07-09 2010-07-06 Circuit d'électronique organique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009032696.0 2009-07-09
DE102009032696A DE102009032696A1 (de) 2009-07-09 2009-07-09 Organisch elektronische Schaltung

Publications (1)

Publication Number Publication Date
WO2011003594A1 true WO2011003594A1 (fr) 2011-01-13

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/004123 Ceased WO2011003594A1 (fr) 2009-07-09 2010-07-06 Circuit d'électronique organique

Country Status (3)

Country Link
EP (1) EP2452340A1 (fr)
DE (1) DE102009032696A1 (fr)
WO (1) WO2011003594A1 (fr)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US10299655B2 (en) 2016-05-16 2019-05-28 General Electric Company Caloric heat pump dishwasher appliance

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KR20060123368A (ko) * 2003-12-22 2006-12-01 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 비휘발성 메모리 장치 및 그 제조 방법
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US20040002176A1 (en) * 2002-06-28 2004-01-01 Xerox Corporation Organic ferroelectric memory cells
US20050242343A1 (en) * 2004-04-28 2005-11-03 Thin Film Electronics Asa Organic electronic circuit with functional interlayer, and method for making the same
US20080273367A1 (en) * 2007-05-03 2008-11-06 Sony Corporation Multi-stack ferroelectric polymer memory device and method for manufacturing same

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10299655B2 (en) 2016-05-16 2019-05-28 General Electric Company Caloric heat pump dishwasher appliance

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Publication number Publication date
EP2452340A1 (fr) 2012-05-16
DE102009032696A1 (de) 2011-01-13

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