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WO2011097178A3 - Procédés de nitruration et d'oxydation - Google Patents

Procédés de nitruration et d'oxydation Download PDF

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Publication number
WO2011097178A3
WO2011097178A3 PCT/US2011/023229 US2011023229W WO2011097178A3 WO 2011097178 A3 WO2011097178 A3 WO 2011097178A3 US 2011023229 W US2011023229 W US 2011023229W WO 2011097178 A3 WO2011097178 A3 WO 2011097178A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
nitridation
nitrogen
methods
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/023229
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English (en)
Other versions
WO2011097178A2 (fr
Inventor
Peter Porshnev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2011097178A2 publication Critical patent/WO2011097178A2/fr
Publication of WO2011097178A3 publication Critical patent/WO2011097178A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H01L21/02332—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen into an oxide layer, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32412—Plasma immersion ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)

Abstract

La présente invention concerne des procédés de nitruration et d'oxydation sélective. Dans certains modes de réalisation, un procédé de nitruration comprend les étapes suivantes : fourniture d'un substrat sur lequel est disposée une première couche, ledit substrat étant disposé sur un support de substrat dans une chambre de traitement ; formation d'un plasma à distance à partir d'un gaz de traitement comprenant de l'azote ; et exposition de la première couche à une espèce réactive formée à partir du plasma à distance, pour former une couche contenant de l'azote. Une densité de l'espèce réactive est comprise entre environ 109 et environ 1017 molécules/cm3, et une pression dans la chambre durant l'exposition de la première couche est comprise entre environ 5 mTorr et environ 3 Torr. Dans certains modes de réalisation, la couche contenant de l'azote est une couche diélectrique de grille destinée à être utilisée dans un dispositif semi-conducteur.
PCT/US2011/023229 2010-02-02 2011-01-31 Procédés de nitruration et d'oxydation Ceased WO2011097178A2 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US30058610P 2010-02-02 2010-02-02
US61/300,586 2010-02-02
US13/017,904 2011-01-31
US13/017,904 US20110189860A1 (en) 2010-02-02 2011-01-31 Methods for nitridation and oxidation

Publications (2)

Publication Number Publication Date
WO2011097178A2 WO2011097178A2 (fr) 2011-08-11
WO2011097178A3 true WO2011097178A3 (fr) 2011-10-27

Family

ID=44342065

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/023229 Ceased WO2011097178A2 (fr) 2010-02-02 2011-01-31 Procédés de nitruration et d'oxydation

Country Status (2)

Country Link
US (2) US20110189860A1 (fr)
WO (1) WO2011097178A2 (fr)

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KR101893471B1 (ko) * 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
US8907307B2 (en) * 2011-03-11 2014-12-09 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for maskless patterned implantation
CN104106128B (zh) * 2012-02-13 2016-11-09 应用材料公司 用于基板的选择性氧化的方法和设备
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US20140099794A1 (en) * 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US9059130B2 (en) 2012-12-31 2015-06-16 International Business Machines Corporation Phase changing on-chip thermal heat sink
CN103065954B (zh) * 2013-01-16 2016-03-30 苏州大学 一种HfO2薄膜/HfSiNO界面层/Si衬底栅介质的制备方法
US9460917B2 (en) * 2014-02-12 2016-10-04 Translucent, Inc. Method of growing III-N semiconductor layer on Si substrate
US9840777B2 (en) 2014-06-27 2017-12-12 Applied Materials, Inc. Apparatus for radical-based deposition of dielectric films
KR101993070B1 (ko) * 2015-02-02 2019-06-25 가부시키가이샤 코쿠사이 엘렉트릭 반도체 장치의 제조 방법 및 기록 매체
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US20170345912A1 (en) * 2016-05-26 2017-11-30 Globalfoundries Inc. Methods of recessing a gate structure using oxidizing treatments during a recessing etch process
KR102455355B1 (ko) 2018-01-15 2022-10-18 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 산화에 대한 아르곤 추가
WO2019195024A1 (fr) * 2018-04-02 2019-10-10 Lam Research Corporation Modification de propriétés ferroélectriques d'oxyde d'hafnium par des couches de nitrure d'hafnium
US11114306B2 (en) * 2018-09-17 2021-09-07 Applied Materials, Inc. Methods for depositing dielectric material

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US20070066013A1 (en) * 2005-09-22 2007-03-22 Hynix Semiconductor Inc. Method for fabricating semiconductor device
US7226874B2 (en) * 2002-05-13 2007-06-05 Tokyo Electron Limited Substrate processing method
US20080135954A1 (en) * 2006-12-08 2008-06-12 Tohoku University Semiconductor device and method of producing the semiconductor device
US7629033B2 (en) * 2000-03-24 2009-12-08 Tokyo Electron Limited Plasma processing method for forming a silicon nitride film on a silicon oxide film

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Also Published As

Publication number Publication date
US20110189860A1 (en) 2011-08-04
WO2011097178A2 (fr) 2011-08-11
US20110281440A1 (en) 2011-11-17

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