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WO2011090300A3 - 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법 - Google Patents

다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법 Download PDF

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Publication number
WO2011090300A3
WO2011090300A3 PCT/KR2011/000342 KR2011000342W WO2011090300A3 WO 2011090300 A3 WO2011090300 A3 WO 2011090300A3 KR 2011000342 W KR2011000342 W KR 2011000342W WO 2011090300 A3 WO2011090300 A3 WO 2011090300A3
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WO
WIPO (PCT)
Prior art keywords
nanoparticles
photoactive layer
solar cell
inorganic hybrid
semiconductor nanoparticles
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Ceased
Application number
PCT/KR2011/000342
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English (en)
French (fr)
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WO2011090300A2 (ko
Inventor
김태환
정재훈
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Industry University Cooperation Foundation IUCF HYU
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Industry University Cooperation Foundation IUCF HYU
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Publication of WO2011090300A2 publication Critical patent/WO2011090300A2/ko
Publication of WO2011090300A3 publication Critical patent/WO2011090300A3/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)

Abstract

다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법을 제공한다. 적층형 유기-무기 하이브리드 태양전지는 제1 전극, 상기 제1 전극 상에 위치하고 제1 반도체 나노입자 및 제1 전도성 고분자를 함유하는 제1 광활성층, 상기 제1 광활성층 상에 위치하는 그래핀층, 상기 그래핀층 상에 위치하고 제2 반도체 나노입자 및 제2 전도성 고분자를 함유하는 제2 광활성층 및 상기 제2 광활성층 상에 위치하는 제2 전극을 포함하며, 상기 제1 반도체 나노입자와 상기 제2 반도체 나노입자는 서로 다른 밴드갭을 갖는다. 본 발명에 따르면, 광활성층의 광흡수 대역을 확장할 수 있으며, 태양전지의 발열을 최대한 줄이고 광흡수율을 극대화할 수 있다. 또한, 그래핀층의 도입으로 광활성층의 적층 과정에서 발생할 수 있는 하부 광활성층의 침식을 방지하고, 소자의 직렬 저항에 의한 전력 손실을 줄이는 한편, 태양광의 입사량 손실을 최소화할 수 있다.
PCT/KR2011/000342 2010-01-19 2011-01-18 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법 Ceased WO2011090300A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0004875 2010-01-19
KR1020100004875A KR101139577B1 (ko) 2010-01-19 2010-01-19 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법

Publications (2)

Publication Number Publication Date
WO2011090300A2 WO2011090300A2 (ko) 2011-07-28
WO2011090300A3 true WO2011090300A3 (ko) 2011-11-10

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PCT/KR2011/000342 Ceased WO2011090300A2 (ko) 2010-01-19 2011-01-18 다양한 종류의 나노입자를 함유한 적층형 유기-무기 하이브리드 태양전지 및 그 제조방법

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KR (1) KR101139577B1 (ko)
WO (1) WO2011090300A2 (ko)

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DE112012003329T5 (de) * 2011-08-11 2014-04-30 National University Of Singapore Tandem-Solarzelle mit Graphen-Zwischenschicht und Verfahren zum Herstellen davon
WO2013027717A1 (ja) * 2011-08-24 2013-02-28 株式会社 村田製作所 太陽電池と該太陽電池の製造方法
KR101282041B1 (ko) * 2011-10-31 2013-07-04 한국화학연구원 고효율 무／유기 이종접합 무기반도체 감응형 광전소자 및 그 제조방법
KR101339441B1 (ko) * 2011-10-31 2013-12-06 성균관대학교산학협력단 전해증착을 통한 그래핀과 전도성고분자의 다층구조 복합체 및 이의 제조 방법
KR101349505B1 (ko) * 2011-12-19 2014-01-10 엘지이노텍 주식회사 태양전지 및 이의 제조방법
KR101975852B1 (ko) * 2012-04-14 2019-05-07 세종대학교산학협력단 적층체, 그를 포함하는 전자소자 및 그 제조방법
CN104488051B (zh) * 2012-05-25 2017-05-24 韩国生产技术研究院 具有涂覆有石墨烯的碳纳米网的染料敏化太阳能电池及其制造方法
WO2013176493A1 (ko) * 2012-05-25 2013-11-28 한국생산기술연구원 그래핀 코팅된 탄소나노웹을 구비한 염료감응 태양전지 및 이의 제조방법
KR101316096B1 (ko) * 2012-05-31 2013-10-11 한국기계연구원 중간층이 삽입된 유·무기 복합 탠덤 태양전지 및 이의 제조방법
KR101989155B1 (ko) * 2012-08-01 2019-06-17 삼성전자주식회사 초음파 변환기, 이를 포함하는 초음파 발생 장치 및 시스템
KR101437070B1 (ko) * 2013-02-15 2014-09-02 서울시립대학교 산학협력단 광기전력 소자
KR101659119B1 (ko) * 2013-05-14 2016-09-22 동의대학교 산학협력단 태양전지의 광활성층 및 이의 제조 방법
KR101489217B1 (ko) * 2013-10-01 2015-02-04 서울시립대학교 산학협력단 유무기 복합 발광소자와 그 제조방법 및 유무기 복합 태양전지
KR102065110B1 (ko) 2013-11-12 2020-02-11 삼성전자주식회사 플렉서블 그래핀 스위칭 소자
CN104465869A (zh) * 2014-11-21 2015-03-25 广西智通节能环保科技有限公司 一种硅太阳能电池的制作方法
CN104465867A (zh) * 2014-11-21 2015-03-25 广西智通节能环保科技有限公司 一种新型太阳能电池的制作方法
GB201513366D0 (en) * 2015-07-29 2015-09-09 Univ Ulster Photovoltaic device
KR101976673B1 (ko) * 2017-12-19 2019-05-10 한국에너지기술연구원 실리콘 태양전지
RU196426U1 (ru) * 2019-12-27 2020-02-28 федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет ИТМО" (Университет ИТМО) Прозрачный гетеропереход на основе оксидов

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KR20110085216A (ko) 2011-07-27
KR101139577B1 (ko) 2012-04-27

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