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WO2011078512A3 - Etchant and electronic device manufacturing method - Google Patents

Etchant and electronic device manufacturing method Download PDF

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Publication number
WO2011078512A3
WO2011078512A3 PCT/KR2010/008941 KR2010008941W WO2011078512A3 WO 2011078512 A3 WO2011078512 A3 WO 2011078512A3 KR 2010008941 W KR2010008941 W KR 2010008941W WO 2011078512 A3 WO2011078512 A3 WO 2011078512A3
Authority
WO
WIPO (PCT)
Prior art keywords
electronic device
etchant
semiconductor layer
device manufacturing
transition metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/008941
Other languages
French (fr)
Korean (ko)
Other versions
WO2011078512A2 (en
Inventor
박귀홍
이기범
조삼영
구병수
최정헌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020100118966A external-priority patent/KR101800803B1/en
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Priority to JP2012545844A priority Critical patent/JP2013516064A/en
Priority to CN201080058576.3A priority patent/CN102666780B/en
Publication of WO2011078512A2 publication Critical patent/WO2011078512A2/en
Publication of WO2011078512A3 publication Critical patent/WO2011078512A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)

Abstract

Disclosed is an etching fluid for electronic devices, comprising: a transition metal and/or a transition metal salt; and a hydrofluoric acid and/or a fluoride salt. The etchant selectively etches an intrinsic semiconductor layer, in an electronic device which has a doped semiconductor layer situated between metal electrodes and said intrinsic semiconductor layer.
PCT/KR2010/008941 2009-12-24 2010-12-14 Etchant and electronic device manufacturing method Ceased WO2011078512A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012545844A JP2013516064A (en) 2009-12-24 2010-12-14 Etching solution and method for manufacturing electronic device
CN201080058576.3A CN102666780B (en) 2009-12-24 2010-12-14 Etching solution and electronic component manufacturing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20090131253 2009-12-24
KR10-2009-0131253 2009-12-24
KR10-2010-0118966 2010-11-26
KR1020100118966A KR101800803B1 (en) 2009-12-24 2010-11-26 Etchant and method for preparing electronic device

Publications (2)

Publication Number Publication Date
WO2011078512A2 WO2011078512A2 (en) 2011-06-30
WO2011078512A3 true WO2011078512A3 (en) 2011-10-27

Family

ID=44196260

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/008941 Ceased WO2011078512A2 (en) 2009-12-24 2010-12-14 Etchant and electronic device manufacturing method

Country Status (1)

Country Link
WO (1) WO2011078512A2 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200898B1 (en) * 1999-10-25 2001-03-13 Vanguard International Semiconductor Corporation Global planarization process for high step DRAM devices via use of HF vapor etching
US20020009833A1 (en) * 2000-06-15 2002-01-24 Horng-Chih Lin Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
US6753606B2 (en) * 2000-03-06 2004-06-22 International Business Machines Corporation Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
US20060027889A1 (en) * 2004-08-05 2006-02-09 International Business Machines Corporation Isolated fully depleted silicon-on-insulator regions by selective etch

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6200898B1 (en) * 1999-10-25 2001-03-13 Vanguard International Semiconductor Corporation Global planarization process for high step DRAM devices via use of HF vapor etching
US6753606B2 (en) * 2000-03-06 2004-06-22 International Business Machines Corporation Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
US20020009833A1 (en) * 2000-06-15 2002-01-24 Horng-Chih Lin Thin film transistor with sub-gates and schottky source/drain and a manufacturing method of the same
US20060027889A1 (en) * 2004-08-05 2006-02-09 International Business Machines Corporation Isolated fully depleted silicon-on-insulator regions by selective etch

Also Published As

Publication number Publication date
WO2011078512A2 (en) 2011-06-30

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