[go: up one dir, main page]

WO2011071753A2 - Génération de motifs combinatoires par inclinaison délibérée d'un réseau de plumes polymère - Google Patents

Génération de motifs combinatoires par inclinaison délibérée d'un réseau de plumes polymère Download PDF

Info

Publication number
WO2011071753A2
WO2011071753A2 PCT/US2010/058773 US2010058773W WO2011071753A2 WO 2011071753 A2 WO2011071753 A2 WO 2011071753A2 US 2010058773 W US2010058773 W US 2010058773W WO 2011071753 A2 WO2011071753 A2 WO 2011071753A2
Authority
WO
WIPO (PCT)
Prior art keywords
array
substrate surface
pen
μπι
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/058773
Other languages
English (en)
Other versions
WO2011071753A3 (fr
Inventor
Chad A. Mirkin
Adam B. Braunschweig
Jinan Chai
Dan J. Eichelsdoerfer
Louise R. Giam
Xing LIAO
Lu Shin Wong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northwestern University
Original Assignee
Northwestern University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northwestern University filed Critical Northwestern University
Priority to US13/513,618 priority Critical patent/US8753813B2/en
Publication of WO2011071753A2 publication Critical patent/WO2011071753A2/fr
Publication of WO2011071753A3 publication Critical patent/WO2011071753A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277—Apparatus
    • B01J2219/00351—Means for dispensing and evacuation of reagents
    • B01J2219/00387—Applications using probes

Definitions

  • PPL Polymer-pen lithography
  • PPL has the ability to print features ranging in edge length from about 90 nm to tens of micrometers in a single writing operation.
  • PPL offers several advantages over DPN, including higher throughput by using a massively parallel array of elastomeric tips (for example up to 10 tips) and the ability to change the feature size using either contact force or dwell time.
  • the ability to vary the feature size by varying the contact force between the tip array and the substrate is a feature unique to PPL and occurs because the elastomeric tips deform upon contact with the surface, thus increasing the contact area and in turn, the feature edge length. Recently, a quantitative relationship between the force between the tip array and the substrate and the resulting feature edge lengths was established and verified experimentally.
  • a method for forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array includes choosing a tilt geometry for a pen array with respect to a substrate surface, the tilt geometry being in reference to a substrate surface and comprising a first angle of the pen array with respect to a first axis of the substrate and a second angle of the pen array with respect to a second axis of the substrate, the first and second axes being parallel to the substrate surface and perpendicular to one another, at least one of the first and second angles being non-zero, wherein a leveled position with respect to the substrate surface comprises first and second angles both equaling 0°, inducing the tilt geometry between the pen array and the substrate surface by the chosen first and second angles; and forming a pattern having pattern elements on the substrate surface with the titled pen array, whereby the size of the formed pattern elements varies across the substrate surface along the tilted axis or axes.
  • the pen array includes a plurality of tips fixed to a common substrate layer, the tips and the common substrate layer are formed from an elastomeric polymer or elastomeric gel polymer, and the tips have a radius of curvature of less than about 1 ⁇ .
  • a method of forming a pattern having pattern elements with a plurality of sizes on a substrate surface with a tilted pen array includes choosing a range of pattern element sizes for a pattern formed on a substrate surface and choosing, based on a theoretical model, a tilt geometry for a pen array with respect to the substrate surface to achieve the chosen range of pattern element sizes, the tilt geometry being in reference to a substrate surface and comprising a first angle of the pen array with respect to a first axis of the substrate and a second angle of the pen array with respect to a second axis of the substrate, the first and second axes being parallel to the substrate surface and perpendicular to one another, at least one of the first and second angles being nonzero, wherein a leveled position with respect to the substrate surface comprises first and second angles both equaling 0°, inducing the tilt geometry between the pen array and the substrate surface by the chosen first and second angles, and forming the pattern having pattern elements on the substrate surface with the
  • the pen array includes a plurality of tips fixed to a common substrate layer, the tips and the common substrate layer being formed from an elastomeric polymer or elastomeric gel polymer, and the tips having a radius of curvature of less than about 1 ⁇ .
  • a substrate surface includes an array of printed indicia having a gradient of feature sizes across the array of printed indicia, wherein the array of printed indicia is printed using a pen array comprising a plurality of tips fixed to a common substrate layer tilted relative to a leveled position with respect to the substrate surface, the spacing between adjacent indicia being substantially equal to the spacing between adjacent tips of the pen array, and the array printed in a single printing step.
  • Figure la is a schematic drawing of a pyramidal tip of a polymer pen tip array
  • Figure lb is a schematic drawing illustrating an unleveled polymer pen array with arbitrary angles ⁇ and ⁇ between the pen array and the surface, the black pen illustrating the initial point of contact;
  • Figure 2a is a graph showing the predicted total force as a function of tilting angles ( ⁇ , ⁇ ) for a 1 cm x 1 cm pen array with 80 ⁇ pitch between pens;
  • Figure 2b is a graph showing the difference between the maximum and minimum feature size as a function of tilt for a 1 cm x 1cm pen array with 80 ⁇ pitch between pens;
  • Figure 3d is a graph illustrating the relationship between feature size and distance along the pen array as a function of different leveling conditions
  • Figure 4 is a graph illustrating the distribution of calculated feature size as a function of tilting angles ( ⁇ , ⁇ ) for a 20 x 20 pen array with 500 ⁇ pitch between pens and a z-piezo extension of about 12 ⁇ ;
  • Figure 5a is a scanning electron microscopy image of several arrays of gold nanoparticles printed in accordance with an embodiment of the method of the present disclosure, the inset shows a single array;
  • Figure 5b is a scanning electron microscopy image of one portion of an array of Figure 5a, the inset shows the size of a single gold nanoparticle;
  • Figure 6 is a schematic drawing illustrating the variation in feature size in patterns written on a substrate deposited by a deliberately tilted polymer pen array
  • Figure 7 is an optical micrograph of an MHA pattern printed on gold using a tilted polymer pen array in accordance with an embodiment of the method of the disclosure;
  • Figure 8A is a fluorescence microscopy image of a stem cell grown on a surface displaying a combinatorial pattern of different sized features of fibronectin;
  • Figure 8B is a fluorescence microscopy image of the stem cell of Figure 8A;
  • Figure 8C is a fluorescence microscopy image of the combinatorial pattern of different sized features of fibronectin of Figure 8A;
  • Figure 9 is a schematic drawing of a patterned biomimetic membrane bearing nickel chelating groups that adsorb His-tagged adhesion protein, such as cadherin.
  • the lipid bilayer membrane containing nickel chelating moieties is patterned by PPL, which can subsequently be used to capture His-tagged proteins;
  • Figures 10a- 10c are graphs illustrating a method of leveling a polymer pen array, and specifically Figure 10a is a graph illustrating the total force measurements resulting from tilting the pen array to vary ⁇ , while holding ⁇ constant, until a local maximum in total force is found; Figure 10b is a graph illustrating the total force measurements resulting from tilting the pen array to vary ⁇ , while holding ⁇ constant, until a local maximum in total force is found; and Figure 10c is a graph illustrating the total force measurements resulting from tilting of the pen array to vary ⁇ , while again holding ⁇ constant until a global maximum in total force is found; and
  • Figure lOd is a three-dimensional plot constructed from the graphs of Figures 10a- 10c.
  • Deliberate tilting of a pen array, for example, a polymer or gel pen array, before printing can allow high-throughput combinatorial arrays of varying feature size to be quickly fabricated.
  • the tips of the pen array can be made to deform with successively increasing amounts of applied pressure, which can be controlled by simply extending the piezo in the vertical direction (z-piezo).
  • Controlled deformation of the tips of the pen array can be used as an adjustable variable, allowing one to control tip-substrate contact area and resulting feature size.
  • the variance in feature size occurs because the tilt between the pen array and the substrate causes each of the pens to deform differently upon z-piezo extension, which results in features of different dimensions being produced.
  • Any polymer pen lithography method can be used in the method of the present disclosure depending on the ink to be printed on the substrate.
  • Polymer Pen Lithography, Gel Pen Lithography, and Beam Pen Lithography can be used in the method of the present disclosure.
  • Polymer Pen Lithography see International Patent Publication No. WO 2009/132321, the entire disclosure of which is incorporated herein by reference.
  • Gel Pen Lithography see International Patent Application No. PCT/US2010/024631, the entire disclosure of which is incorporated herein by reference.
  • Beam Pen Lithography see International Patent Application No. PCT/US2010/024633, the entire disclosure of which is incorporate herein by reference.
  • matrix-assisted polymer pen lithography see Huang et al., 6 Small 1077-81 (2010)
  • the method of the present disclosure can be used to print various inorganic materials.
  • features made by polymer pen lithography can exhibit a size that is linearly dependent on the square root of the tip-substrate contact time.
  • This property of polymer pen lithography which is a result of the diffusive characteristics of the ink and the small size of the delivery tips, allows one to pattern sub-micron features with high precision and reproducibility (variation of feature size is less than 10% under the same experimental conditions).
  • the pressure dependence of polymer pen lithography derives from the deformable or compressible nature of the elastomer pyramid array.
  • the microscopic, preferably pyramidal, tips can be made to deform with successively increasing amounts of applied pressure, which can be controlled by simply extending the piezo in the vertical direction (z-piezo).
  • z-piezo a major drawback in contact printing (it can result in "roof collapse and limit feature size resolution)
  • the controlled deformation can be used as an adjustable variable, allowing one to control tip-substrate contact area and resulting feature size.
  • z-piezo extension of about 5 to about 25 ⁇ , one can observe a near linear relationship between piezo extension and feature size at a fixed contact time.
  • BPL Beam Pen Lithography
  • BPL can provide the flexibility to create different patterns by controlling the movement of a pen array over the substrate and/or by selectively illuminating one or more of the tips in the pen array.
  • multiple "dots", for example, can be fabricated to achieve arbitrary features. This approach bypasses the need for, and costs associated with, photomask fabrication in
  • An embodiment of BPL generally includes contacting a photosensitive substrate, for example, a substrate having a photosensitive layer coated thereon, with a pen array and irradiating a surface of a pen array with a radiation source, such as, for example, UV light.
  • the pen array generally includes tips having a blocking layer disposed on the sidewalls of the tips and an aperture formed therein exposing the tip end. As a result of the blocking layer blocking the radiation (e.g., by reflection), the radiation is transmitted through the transparent polymer and out the portion of the transparent polymer exposed by the aperture (i.e., the tip end).
  • Patterning using the transmitted radiation can be performed in a contact mode, in which the pen array is brought into contact with the substrate surface, or in a non-contact mode, in which the pen array is brought near the substrate surface, or in a combination thereof in which a subset of one or more pens in the pen array is brought into contact with the substrate surface.
  • the type of radiation used with the Beam Pen Lithography is not limited. Radiation in the wavelength range of about 300 nm to about 600 nm is preferred, optionally 380 nm to 420 nm, for example about 365 nm, about 400 nm, or about 436 nm.
  • the radiation optionally can have a minimum wavelength of about 300, 350, 400, 450, 500, 550, or 600 nm.
  • the radiation optionally can have a maximum wavelength of about 300, 350, 400, 450, 500, 550, or 600 nm.
  • the photosensitive layer disposed on the substrate can be exposed by the radiation transmitted through the polymer tip for any suitable time, for example, in a range of about 1 second to about 1 minute.
  • the minimum exposure time can be about 1, 2, 3, 4, 5 ,6, 7, 8, 9, 10, 20, 30, 40, 50, or 60 seconds.
  • the maximum exposure time can be about 1, 2, 3, 4, 5 ,6, 7, 8, 9, 10, 20, 30, 40, 50, or 60 seconds.
  • the photosensitive layer can be developed, for example, by any suitable process known in the art.
  • the exposed resist layer can be developed for about 30 seconds in MF319 (Rohm & Haas Electronic Materials LLC).
  • the resist layer can be a positive resist or a negative resist. If a positive resist layer is used, developing of the resist layer removes the exposed portion of the resist layer. If a negative resist layer is used, developing of the resist layer removes the unexposed portion of the resist layer.
  • Beam Pen Lithography can further include depositing a patterning layer on the substrate surface after exposure followed by lift off of the resist layer to thereby form the patterning layer into the indicia printed on the resist layer by BPL.
  • the patterning layer can be a metal, for example, and can be deposited, for example, by thermal evaporation.
  • the resist lift off can be performed using, for example, acetone.
  • polymer pen arrays generally refers to pen arrays for use in any polymer pen lithography method including, but not limited to, Polymer Pen Lithography, Gel Pen Lithography, and Beam Pen Lithography.
  • Polymer pen arrays generally include elastomeric tips without cantilevers to deliver ink to a printing surface or otherwise pattern a substrate surface.
  • the tips are preferably made of polydimethylsiloxane (PDMS) or agarose gel.
  • PDMS polydimethylsiloxane
  • the tips are formed from a material which is at least translucent to the wavelength of radiation intended for use in patterning, e.g., in a range of 300 nm to 600 nm.
  • a polymer pen array can include any number of tips, preferably having a pyramidal shape, which can be made by molding with a master prepared by conventional photolithography and subsequent wet chemical etching.
  • Contemplated numbers of tips include about 1000 tips to about 15 million tips, or greater.
  • the number of tips of the polymer pen array can be greater than about 1 million, greater than about 2 million, greater than about 3 million, greater than about 4 million, greater than 5 million tips, greater than 6 million, greater than 7 million, greater than 8 million, greater than 9 million, greater than 10 million, greater than 11 million, greater than 12 million, greater than 13 million, greater than 14 million, or greater than 15 million tips.
  • the tips can be designed to have any shape or spacing between them, as needed.
  • the shape of each tip can be the same or different from other tips of the array.
  • Contemplated tip shapes include spheroid, hemispheroid, toroid, polyhedron, cone, cylinder, and pyramid (trigonal or square).
  • the tips are sharp, so that they are suitable for forming submicron patterns, e.g., less than about 500 nm.
  • the tip ends can have a diameter in a range of about 50 nm to about 1 ⁇ .
  • the minimum diameter can be about 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, or 1000 nm.
  • the maximum diameter can be about 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 150, 200, 250, 300, 350, 400, 450, 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, or 1000 nm.
  • the sharpness of the tip is measured by its radius of curvature, and the radius of curvature of the tips disclosed herein is below 1 ⁇ , and can be less than about 0.9 ⁇ , less than about 0.8 ⁇ , less than about 0.7 ⁇ , less than about 0.6 ⁇ , less than about 0.5 ⁇ , less than about 0.4 ⁇ , less than about 0.3 ⁇ , less than about 0.2 ⁇ , less than about 0.1 ⁇ , less than about 90 nm, less than about 80 nm, less than about 70 nm, less than about 60 nm, or less than about 50 nm.
  • the tips of the pen array can be designed to have any desired thickness, for example, the thickness of the tip array is about 50 nm to about 50 ⁇ , about 10 ⁇ to about 50 ⁇ , about 50 nm to about 1 ⁇ , about 50 nm to about 500 nm, about 50 nm to about 400 nm, about 50 nm to about 300 nm, about 50 nm to about 200 nm, or about 50 nm to about 100 nm.
  • the minimum thickness can be about 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1 ⁇ , 5 ⁇ , 10 ⁇ , 15 ⁇ , 20 ⁇ , 25 ⁇ , 30 ⁇ , 35 ⁇ , 40 ⁇ , 45 ⁇ , or 50 ⁇ .
  • the maximum thickness can be about 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, 1 ⁇ , 5 ⁇ , 10 ⁇ , 15 ⁇ , 20 ⁇ , 25 ⁇ , 30 ⁇ , 35 ⁇ , 40 ⁇ , 45 ⁇ , or 50 ⁇ .
  • the thickness of the pen array can be decreased as the rigidity of the polymer used to form the tip substrate layer increases.
  • the tip array can have a thickness in a range of about 10 ⁇ to about 50 ⁇ .
  • the tip array can have a thickness of about 50 nm to about 1 ⁇ .
  • the thickness of the tip array refers to the distance from the tip end to the base end of a tip.
  • the tips can be arranged randomly or in any pattern, including a regular periodic pattern (e.g., in columns and rows, in a circular or radial pattern, or the like).
  • the tips have a base portion fixed to the tip substrate layer. The base portion preferably is larger than the tip end portion.
  • the base portion can have an edge length in a range of about 1 ⁇ to about 50 ⁇ , or about 5 ⁇ to about 50 ⁇ .
  • the minimum edge length can be about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 22, 24, 26, 28, 30, 32, 34, 36, 38, 40, 42, 44, 46, 48, or 50 ⁇ .
  • the maximum edge length can be about 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 22, 24, 26, 28, 30, 32, 34, 36, 38, 40, 42, 44, 46, 48, or 50 ⁇ .
  • the tip array is preferably formed such that the tip ends lie in a single plane, although alternative arrangements are also contemplated.
  • the polymers suitable for use in the pen array can be any polymer having a compressibility and/or deformability compatible with the lithographic methods. In one embodiment, the polymer is deformable; in another embodiment the polymer is compressible.
  • Polymeric materials suitable for use in the pen array can have linear or branched backbones, and can be crosslinked or non-crosslinked, depending upon the particular polymer and the degree of compressibility desired for the tip. Cross-linkers refer to multi-functional monomers capable of forming two or more covalent bonds between polymer molecules.
  • Non-limiting examples of cross-linkers include trimethylolpropane trimethacrylate (TMPTMA), divinylbenzene, di-epoxies, tri- epoxies, tetra-epoxies, di-vinyl ethers, tri- vinyl ethers, tetra-vinyl ethers, and combinations thereof.
  • TMPTMA trimethylolpropane trimethacrylate
  • divinylbenzene di-epoxies
  • tri- epoxies tri- epoxies
  • tetra-epoxies di-vinyl ethers
  • tri- vinyl ethers tetra-vinyl ethers
  • Thermoplastic or thermosetting polymers can be used, as can crosslinked elastomers.
  • the polymers can be porous and/or amorphous.
  • a variety of elastomeric polymeric materials are contemplated, including polymers of the general classes of silicone polymers and epoxy polymers. Polymers having low glass transition temperatures such as, for example, below 25°C or more preferably below -50°C, can be used. Diglycidyl ethers of bisphenol A can be used, in addition to compounds based on aromatic amine, triazine, and cycloaliphatic backbones.
  • Novolac polymers include methylchlorosilanes, ethylchlorosilanes, and phenylchlorosilanes, polydimethylsiloxane (PDMS).
  • PDMS polydimethylsiloxane
  • Other materials include polyethylene, polystyrene, polybutadiene, polyurethane, polyisoprene, polyacrylic rubber, fluorosilicone rubber, and fluoroelastomers.
  • suitable polymers that may be used to form a tip can be found in U.S. Patent No. 5,776,748; U.S. Patent No. 6,596,346; and U.S. Patent No. 6,500,549, each of which is hereby incorporated by reference in its entirety.
  • Other suitable polymers include those disclosed by He et al., Langmuir 2003, 19, 6982- 6986; Donzel et ah, Adv. Mater. 2001, 13, 1164-1167; and Martin et al., Langmuir, 1998, 14-15, 3791-3795.
  • Hydrophobic polymers such as polydimethylsiloxane can be modified either chemically or physically by, for example, exposure to a solution of a strong oxidizer or to an oxygen plasma.
  • the polymer of the tip array can be a polymer gel.
  • the polymer gel can comprise any suitable gel, including hydrogels and organogels.
  • the polymer gel can be a silicone hydrogel, a branched polysaccharide gel, an unbranched polysaccharide gel, a polyacrylamide gel, a polyethylene oxide gel, a cross-linked polyethylene oxide gel, a poly(2-acrylamido-2-methyl-l-propanesulfonic acid) (polyAMPS) gel, a polyvinylpyrrolidone gel, a cross-linked
  • the polymer gel can be an agarose gel.
  • gels are mostly liquid, for example, gels can be greater than 95% liquid, yet behave like solids due to the presence of a cross-linked network within the liquid.
  • the gel polymer can be, for example, hydrophilic and/or porous, allowing for absorption of a pattern composition.
  • the polymer of the pen array has a suitable compression modulus and surface hardness to prevent collapse of the polymer during inking and printing, but too high a modulus and too great a surface hardness can lead to a brittle material that cannot adapt and conform to a substrate surface during printing.
  • vinyl and hydrosilane prepolymers can be tailored to provide polymers of different modulus and surface hardness.
  • the polymer is a mixture of vinyl and hydrosilane prepolymers, where the weight ratio of vinyl prepolymer to hydrosilane crosslinker is about 5:1 to about 20:1, about 7:1 to about 15:1, or about 8:1 to about 12:1.
  • the polymers of the pen array preferably will have a surface hardness of about 0.2% to about 3.5% of glass, as measured by resistance of a surface to penetration by a hard sphere with a diameter of 1 mm, compared to the resistance of a glass surface (as described in Schmid, et al., Macromolecules, 33:3042 (2000) at p 3044).
  • the surface hardness can be about 0.3% to about 3.3%, about 0.4% to about 3.2%, about 0.5% to about 3.0%, or about 0.7% to about 2.7%.
  • the polymers of the tip array can have a compression modulus of about 10 MPa to about 300 MPa.
  • the pen array preferably comprises a compressible polymer or a deformable polymer which is Hookean under pressures of about 10 MPa to about 300 MPa. The linear relationship between pressure exerted on the pen array and the feature size allows for control of the indicia printed using the disclosed methods and pen arrays (see Fig. 2b).
  • the pen array can comprise a polymer that has adsorption and/or absorption properties for the patterning composition, such that the tip array acts as its own patterning composition reservoir.
  • PDMS is known to adsorb patterning inks, see, e.g., U.S. Patent Publication No. 2004/228962, Zhang, et al., Nano Lett. 4, 1649 (2004), and Wang et al, Langmuir 19, 8951 (2003).
  • the tips of the pen array can be fixed to a common substrate.
  • the common substrate can be formed of a transparent polymer.
  • the tips can be arranged randomly or in any pattern, including a regular periodic pattern (e.g., in columns and rows, in a circular pattern, or the like).
  • the common substrate can comprise, for example, an elastomeric layer, which can comprise the same polymer that forms the tips of the tip array, or can comprise an elastomeric polymer that is different from that of the tip array.
  • the common substrate can be a gel backing layer. Suitable gels include those described herein in connection with polymer gels for use as tip materials.
  • the elastomeric layer can have a thickness of about 50 ⁇ to about 100 ⁇ .
  • the common substrate layer can have any suitable thickness, for example, in a range of about 50 ⁇ to about 5 mm, about 50 ⁇ to about 100 ⁇ , or about 1 mm to about 5 mm.
  • the common substrate layer can have a minimum thickness of about 50, 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 2000, 3000, 4000, or 5000 ⁇ .
  • the common substrate layer can have a maximum thickness of about 50, 100, 200, 300, 400, 500, 600, 700, 800, 900, 1000, 2000, 3000, 4000, or 5000 ⁇ .
  • the thickness of the common substrate layer can be decreased as the rigidity of the polymer used to form the common substrate layer increases.
  • the common substrate layer can have a thickness in a range of about 1 mm to about 5mm.
  • the common substrate layer can have a thickness in a range of about 50 ⁇ to about 100 ⁇ , for example.
  • the tip array can be affixed or adhered to a rigid support (e.g., glass, such as a glass slide).
  • a rigid support e.g., glass, such as a glass slide.
  • the common substrate, the tip array, and/or the rigid support, if present, is translucent or transparent. In a specific case, each is translucent or transparent.
  • the combined thickness of the tip substrate layer and the tips can be in range of about 50 ⁇ to about 5 mm.
  • the thickness of combination of the tip array and common substrate can be less than about 200 ⁇ , preferably less than about 150 ⁇ , or more preferably about 100 ⁇ .
  • the polymer backing layer is preferably adhered to a rigid support (e.g., a glass, silicon, quartz, ceramic, polymer, or any combination thereof), e.g., prior to or via curing of the polymer.
  • the rigid support is preferably highly rigid and has a highly planar surface upon which to mount the array (e.g., silica glass, quartz, and the like).
  • the rigid support and thin backing layer significantly improve the uniformity of the polymer pen array over large areas, such as a three inch wafer surface, and make possible the leveling and uniform, controlled use of the array.
  • the tip-to-tip spacing between adjacent tips can be in any desired range, including a range of about 1 ⁇ to about over 10 mm, or about 20 ⁇ to about 1 mm.
  • the minimum tip-to-tip spacing can be about 1 ⁇ , 2 ⁇ , 3 ⁇ , 4 ⁇ , 5 ⁇ , 6 ⁇ , 7 ⁇ , 8 ⁇ , 9 ⁇ , 10 ⁇ , 15 ⁇ , 20 ⁇ , 25 ⁇ , 30 ⁇ , 35 ⁇ , 40 ⁇ , 45 ⁇ , 50 ⁇ , 55 ⁇ , 60 ⁇ , 65 ⁇ , 70 ⁇ , 75 ⁇ , 80 ⁇ , 85 ⁇ , 90 ⁇ , 95 ⁇ , 100 ⁇ , 200 ⁇ , 300 ⁇ , 400 ⁇ , 500 ⁇ , 600 ⁇ , 700 ⁇ , 800 ⁇ , 900 ⁇ , 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm.
  • the maximum tip-to-tip spacing can be about 1 ⁇ , 2 ⁇ , 3 ⁇ , 4 ⁇ , 5 ⁇ , 6 ⁇ , 7 ⁇ , 8 ⁇ , 9 ⁇ , 10 ⁇ , 15 ⁇ , 20 ⁇ , 25 ⁇ , 30 ⁇ , 35 ⁇ , 40 ⁇ , 45 ⁇ , 50 ⁇ , 55 ⁇ , 60 ⁇ , 65 ⁇ , 70 ⁇ , 75 ⁇ , 80 ⁇ , 85 ⁇ , 90 ⁇ , 95 ⁇ , 100 ⁇ , 200 ⁇ , 300 ⁇ , 400 ⁇ , 500 ⁇ , 600 ⁇ , 700 ⁇ , 800 ⁇ , 900 ⁇ , 1 mm, 2 mm, 3 mm, 4 mm, 5 mm, 6 mm, 7 mm, 8 mm, 9 mm, or 10 mm.
  • Polymer pen arrays for use in Beam Pen Lithography generally include a pen array with each tip having a blocking layer disposed thereon, and with an aperture defined in the blocking layer, exposing the transparent tip end (e.g., the photosensitive layer-contacting end of each of the tips).
  • the blocking layer can be coated on the sidewalls of the tips and on portions of the common substrate layer between the tips.
  • the blocking layer serves as a radiation blocking layer, channeling the radiation through the material of the tip and out the exposed tip end.
  • the tips can be used to both channel the radiation to a surface in a massively parallel scanning probe lithographic process and to control one or more parameters such as the distance between the tip and the substrate, and the degree of tip deformation.
  • the tips are elastomeric and reversibly deformable, which can allow the tip array to be brought in contact with the substrate without damage to the substrate or the tip array. This contact can ensure the generation of near-field effects.
  • the blocking layer on the polymer tip sidewalls serves as a radiation blocking layer, allowing the radiation illuminated on a surface of the substrate layer opposite the surface to which the tips are fixed to be emitted only through the tip end exposed by the aperture defined in the blocking layer.
  • the exposure of a substrate pre-coated with a resist layer with the radiation channeled through the tip ends of the tip array can allow for the formation of a single dot per tip for each exposure.
  • the blocking layer can be formed of any material suitable for blocking (e.g., reflecting) a type of radiation used in the lithography process.
  • the blocking layer can be a metal, such as gold, when used with UV light.
  • blocking layers include, but are not limited to, gold, chromium, titanium, silver, copper, nickel, silicon, aluminum, opaque organic molecules and polymers, and combinations thereof.
  • the blocking layer can have any suitable thickness, for example, in a range of about 40 nm to about 500 nm.
  • the minimum thickness can be about 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 150, 200, 250, 300, 350, 400, 450, or 500 nm.
  • the maximum thickness can be about 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 150, 200, 250, 300, 350, 400, 450, or 500 nm.
  • the tips of the pen array for use with BPL can be made by molding with a master prepared by conventional photolithography and subsequent wet chemical etching.
  • the tips can be cleaned, for example, using oxygen plasma, prior to coating with the blocking layer.
  • the blocking layer can be disposed on the tips by any suitable process, including coating, for example, spin-coating, the tips with the blocking layer.
  • An aperture in the blocking layer can be formed by any suitable method, including, for example, focused ion beam (FIB) methods or using a lift-off method.
  • the lift-off method can be a dry lift off method.
  • One suitable approach includes applying an adhesive, such as poly(methyl methacrylate) (PMMA) on top of the blocking layer of the tip array, and removing a portion of the adhesive material disposed at the substrate contacting end of the tips by contacting the pen array to a clean and flat surface, for example, a glass surface.
  • the tips can then be immersed in an etching solution to remove the exposed portion of the blocking layer to form the aperture and expose the material of the tip, e.g. the transparent polymer.
  • the remaining adhesive material protects the covered surfaces of the blocking layer from being etched during the etching step.
  • the adhesive can be, for example, PMMA, poly(ethylene glycol) (PEG), polyacrylonitrile, and combinations thereof.
  • a simple contact approach can be used in which a pen array having the blocking layer is brought in contact with a glass slide or other surface coated with an adhesive material, such as PMMA.
  • an adhesive material such as PMMA.
  • suitable adhesive materials include, for example, PMMA, PEG, polyacrylonitrile, and combinations thereof.
  • the size of the aperture formed can be controlled by applying different external forces on the backside of the BPL pen array.
  • the application of force on the backside of the BPL tip array can be used to control the contact area between the tips and adhesive material surface.
  • the BPL pen array can include pyramidal tips, with each pyramid-shaped tip being covered by a gold blocking layer having a small aperture defined in the blocking layer at the very end of the tip.
  • the size of the aperture does not significantly change from tip to tip.
  • the size of the aperture can vary less than about 10% from tip to tip.
  • the size of the aperture can be tailored over the 200 nm to 1 to 10 ⁇ ranges, for example, by controlling contact force.
  • the aperture can have a diameter in a range of about 5 nm to about 5 ⁇ , about 30 nm to about 500 nm, or about 200 nm to about 5 ⁇ .
  • the minimum aperture diameter can be about 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 200, 300, 400, 500, 600, 700, 800, 900 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, or 5000 nm.
  • the maximum aperture diameter can be about 5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, 60, 65, 70, 75, 80, 85, 90, 95, 100, 200, 300, 400, 500, 600, 700, 800, 900 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, or 5000 nm.
  • the contact force optionally can be in a range of about 0.002 N to about 0.2 N for a 1 cm pen array.
  • Equation 1 i ⁇ NEL b h ot t t t om L top
  • Equation 1 ⁇ wherein N is the total number of pens in the array, E is the compression modulus of the elastomer used, H is the total height of the pyramidal tip prior to compression, Lbottom is the edge length at the bottom surface of the pyramidal tip, and Lt op is the edge length at the top surface of the pyramidal tip.
  • N is the total number of pens in the array
  • E is the compression modulus of the elastomer used
  • H the total height of the pyramidal tip prior to compression
  • Lbottom is the edge length at the bottom surface of the pyramidal tip
  • Lt op is the edge length at the top surface of the pyramidal tip.
  • the compression modulus E of PDMS depends on the compression ratio, which is described by the Mooney-Rivlin equation.
  • Ei can equall.38 MPa and E 2 can equal 8.97 MPa.
  • the force can be determined by Equations 2 and 3 for different values of Z.
  • the tilting between the array and the substrate surface can be described by two angles ⁇ and ⁇ , which are related to the x- and y-axes between the plane of the pen array and the plane of the substrate surface.
  • ⁇ and ⁇ are related to the x- and y-axes between the plane of the pen array and the plane of the substrate surface.
  • the x- and y-axes can be disposed parallel to the rows and columns of tips in the regular periodic pattern, respectively.
  • the array and substrate are brought together in the z-axis direction, perpendicular to the x- and y-axes.
  • the surface and pen array are brought together in the z-axis direction, with increased force applied after initial contact.
  • the compression of each pen varies with ⁇ and ⁇ , the z-piezo extension, and the distance of the particular pen from the closet pen to the surface N x and N y , along the x- and y-axes, respectively.
  • the Z pen for any single pen in the array can be calculated using Equation 4: wherein D is the spacing between pens in the pen array, and N x and N y are the number of pens from the first pen to contact the surface along the x and y axes, respectively.
  • the force generated by any single pen on the surface can be calculated as a function of Z, ⁇ , ⁇ , N x , and N y using Equation 5 or 6, depending on the value of Z:
  • Equation 7 The total force can be calculated using Equation 7:
  • F total (e, ⁇ P) ⁇ F(N x , N y , 0, (p)
  • Such a leveling method can achieve leveling of the pen array within at least about 0.004°, and more preferably within at least about 1.6 x 10 "4 degrees when using a force sensor having a sensitivity of about 0.1 mN. It may be possible to achieve more accurate leveling with a force sensor having increased sensitivity.
  • Leveling is accomplished by first contacting a surface with the pen array and measuring a force exerted on the surface by the pen array. The force can be measured in any suitable way. For example, the force can be measured by placing a force sensor beneath the surface. Alternatively, the force sensor can be the contacted surface.
  • the pen array and/or the surface is then tilted to vary one of the angles, e.g., ⁇ , by a tilt angle increment while keeping the other angle, ⁇ , constant, and the total force exerted by the pen array on the surface is again measured. This process is repeated until a local maximum of the total force is found.
  • the position of the pen array once the local maximum of the total force is measured is the optimized position for ⁇ . Referring to Figure 10a, the measured values of the total force can be plotted as a function of the change in ⁇ to determine when a local maximum of the total force has been measured.
  • the pen array and/or the surface is next tilted to vary the other one of the angles, ⁇ , by a tilt angle increment while holding ⁇ at the previously determined optimized position and measuring the total force exerted by the pen array on the surface. This process is repeated until a local maximum of the total force is measured.
  • the position of the pen array once the local maximum of the total force is measured is the optimized position for ⁇ . Referring to Figure 10b, the measured values of the force can be plotted as a function of the change in ⁇ to determine when a local maximum of the total force has been measured.
  • the tilt of the pen is then finely varied to vary the optimized position of the first varied angle, ⁇ , while holding ⁇ at the previously determined optimized position until a global maximum of the total force exerted by the pen array is found.
  • the measured values of the total force can be plotted as a function of the change in ⁇ to determine when a global maximum of the total force has been measured.
  • Figure lOd illustrates a three- dimensional plot generated from Figures 10a- 10c illustrating the above-described leveling method.
  • This routine, or suitable equivalent can be incorporated into a software algorithm to receive force values and control an automated stage for computer-controlled leveling of a pen array.
  • the features produced after leveling by this force feedback strategy vary only by about 2% across the 1 cm of writing surface with the 15,000 pen array.
  • Figure 3d illustrates the relationship between the feature size and distance along the pen array as a function of the different leveling conditions.
  • the tilt angle increment for varying either or both of ⁇ and ⁇ can be in a range of about 1.6 x 10 "4 degrees to about 0.1°, about 0.0005° to about 0.05°, about 0.005° to about 0.01°, or about 0.001° to about 0.05°.
  • the minimum tilt angle increment can be about 0.00016, 0.0002, 0.0003, 0.0004, 0.0005, 0.0006, 0.0007, 0.0008, 0.0009, 0.001, 0.002, 0.003, 0.004, 0.005, 0.006, 0.007, 0.008, 0.009, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, and 0.1°.
  • the maximum tilt angle increment can be about 0.00016, 0.0002, 0.0003, 0.0004, 0.0005, 0.0006, 0.0007, 0.0008, 0.0009, 0.001, 0.002, 0.003, 0.004, 0.005, 0.006, 0.007, 0.008, 0.009, 0.01, 0.02, 0.03, 0.04, 0.05, 0.06, 0.07, 0.08, 0.09, and 0.1°.
  • the angles of the pen array can be adjusted by tilting one or both of the pen array and the surface.
  • the pen array alone can be tilted, the surface alone can be tilted, or both the pen array and the surface can be tilted.
  • the tilting of the pen array can be achieved by providing a motor-controlled, multi- axis stage attached to the pen array, and controlling the degree of extension of one or more motors to induce the desired tilt angles.
  • three motors Ml, M2, and M3 can hold the pen array. When the two motors Ml and M3 are fixed and the motor M2 is adjusted, the pen array will be tilted in the ⁇ - direction.
  • ⁇ will increase by about 0.08°.
  • ⁇ will increase about 0.04°.
  • Any other method of adjusting the pen array and/or the surface relative to the pen array can be used. Tilting can also be achieved, for example, by holding the pen array in the level position and tilting the substrate surface relative to the pen array.
  • the pen array can be intentionally and precisely tilted with respect to the perfect leveling position to create a combinatorial array of features across a surface.
  • a combinatorial array of features can be printed in a single printing operation. For example, by first leveling the pen array and then by controllably varying the tilt angles, e.g., ⁇ and ⁇ , the size of each feature printed by the pens of the pen array will vary controllably and predictably, with the dimensions of each feature being spatially encoded.
  • the pen array can be leveled, for example, using force feedback leveling or other optical leveling means.
  • Equation 7 the size of each feature made by a given pen can be calculated.
  • the degree of tilt and step size for varying tilt are not limitations of the invention in principle, and may vary with the particular apparatus used to carry out the invention.
  • ⁇ can be varied in a range of about -20° to about 20°, about -15° to about 15°, about -10° to about 10°, about -5° to about 5°, about -6° to about 6°, about -0.1° to about 0.1°, about -0.05° to about 0.05°, about -0.01° to about 0.01°, about -0.001° to about 0.001°, and about -0.0001° to about 0.0001°.
  • ⁇ can have a minimum value of about -20, -18, -16, -14, -12, -10, -8, -6, -4, -2, -1, -0.5, -0.1, -0.05, -0.01, -0.001, -0.0001, 0, 0.0001, 0.001, 0.01, 0.05, 0.1, 0.5, 1, 2, 4, 6, 8, 10, 12, 14, 16, 18, or 20°.
  • ⁇ can have a maximum value of about -20, -18, -16, -14, -12, -10, -8, -6, -4, -2, -1, -0.5, -0.1, -0.05, -0.01, -0.001, -0.0001, 0, 0.0001, 0.001, 0.01, 0.05, 0.1, 0.5, 1, 2, 4, 6, 8, 10, 12, 14, 16, 18, or 20°.
  • ⁇ can be varied in a range of -20° to about 20°, about -15° to about 15°, about -10° to about 10°, about -6° to about 6°, about -5° to about 5°, about -0.01° to about 0.1°, about -0.05° to about 0.05°, about -0.01° to about 0.01°, about -0.001° to about 0.001°, and about -0.0001° to about 0.0001°.
  • ⁇ can have a minimum value of about -20, -18, -16, -14, -12, -10, -8, -6, -4, -2, -1, -0.5, -0.1, -0.05, -0.01, -0.001, -0.0001, 0, 0.0001, 0.001, 0.01, 0.05, 0.1, 0.5, 1, 2, 4, 6, 8, 10, 12, 14, 16, 18, or 20°.
  • ⁇ can have a maximum value of about -20, -18, -16, -14, -12, -10, -8, -6, -4, -2, -1, -0.5, -0.1, -0.05, -0.01, -0.001, -0.0001, 0, 0.0001, 0.001, 0.01, 0.05, 0.1, 0.5, 1, 2, 4, 6, 8, 10, 12, 14, 16, 18, or 20°.
  • ⁇ can have a maximum value of about -20, -18, -16, -14, -12, -10, -8, -6, -4, -2, -1, -0.5, -0.1, -0.05, -0.01, -0.001, -0.0001, 0, 0.0001, 0.001, 0.01, 0.05, 0.1, 0.5, 1, 2, 4, 6, 8, 10, 12, 14, 16, 18, or 20°.
  • ⁇ and ⁇ can be varied to generate a combinatorial array of features across the surface.
  • one of the tilt angles can be held at 0°, while the other tilt angle is chosen to be a non-zero value.
  • the tilt angles can be chosen to have the same or different degrees of tilt.
  • the tilt angles can also be chosen to have the same or different sign.
  • the tilt angle ⁇ can be chosen to be a positive angle, while the tilt angle ⁇ can be chosen to be a negative angle.
  • the tilt angles can be chosen to have different magnitudes.
  • the tilt angle ⁇ can be chosen to be 0.1° and the tilt angle ⁇ can be chosen to be 0.5°.
  • the tilt angles can be controllably varied within lxlO "4 degrees, for example.
  • patterns with a gradient of feature sizes can be created. Feature sizes vary in one axis, while remaining constant along the other axis.
  • an array can be created where, for example, each row contains patterns of the same feature size, and the feature size decreases down a column. The redundancy of the feature size across a row can allow for statistically significant numbers to be obtained for each feature size.
  • patterns formed by deliberately tilting the pen array relative to the substrate include variation in feature size, while the pitch remains constant throughout the substrate.
  • the spacing (i.e., the pitch) between adjacent elements of the pattern or printed indicia can be substantially equal to the tip-to-tip spacing of adjacent tips of the pen array.
  • feature sizes across the combinatorial array can range from tens of nanometers to micron sized features.
  • the difference in feature size across the combinatorial array can range from about 5 nm to about 100 ⁇ , about 10 nm to about 100 ⁇ .
  • the difference in feature size can be at a minimum about 5 nm, 10 nm, 20 nm, 40 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm 950 nm, 1 ⁇ , 2 ⁇ , 3 ⁇ , 4 ⁇ , 5 ⁇ , 6 ⁇ , 7 ⁇ , 8 ⁇ , 9 ⁇ , 10 ⁇ , 11 ⁇ , 12 ⁇ , 13 ⁇ , 14 ⁇ , 15 ⁇ , 20 ⁇ , 30 ⁇ , 40 ⁇ , 50 ⁇ , 60 ⁇ , 70 ⁇ , 80 ⁇ , 90 ⁇ , or 100 ⁇ .
  • the difference in feature size can be at a maximum about 5 nm, 10 nm, 20 nm, 40 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm 950 nm, 1 ⁇ , 2 ⁇ , 3 ⁇ , 4 ⁇ , 5 ⁇ , 6 ⁇ , 7 ⁇ , 8 ⁇ , 9 ⁇ , 10 ⁇ , 11 ⁇ , 12 ⁇ , 13 ⁇ , 14 ⁇ , 15 ⁇ , 20 ⁇ , 30 ⁇ , 40 ⁇ , 50 ⁇ , 60 ⁇ , 70 ⁇ m, 80 ⁇ m, 90 ⁇ , or 100 ⁇ m.
  • the difference in size between adjacent features can be about 5 nm.
  • the substrate surface can be contacted with a pen array a plurality of times, wherein the pen array, the substrate surface or both move laterally with respect to one another to allow for different portions of the substrate surface to be contacted.
  • the time and pressure of each contacting step can be the same or different, depending upon the desired pattern. Increased pressure can be applied by applying a force in the z-axis direction, perpendicular to the x- and y-axes of the substrate. For example, increasing the time and/or pressure of the contacting step can produce pattern elements having larger feature sizes.
  • the tilt geometry (tilt angles with respect to a substrate surface) of the pen array for each contacting step can be the same or different.
  • patterning can also be achieved when one or more pens are disposed in a non-contact mode, by irradiating the substrate surface with the radiation transmitted through the apertures in the tip(s) while the tip(s) of the array are in close proximity to the substrate surface.
  • the pen array, the substrate surface, or both can be moved laterally with respect to one another to allow for different portions of the substrate surface to be irradiated.
  • the irradiation time for each irradiating step can be the same or different to produce features having the same or different sizes.
  • the edge length of the printed feature L featur e can be estimated using Equation 10.
  • L top is the edge length at the top surface of the pyramidal tip
  • v Poisson' s ratio of the elastomer used to form the pens
  • N is the total number of pens in the pen array
  • E is the compression modulus of the elastomer used to form the pens
  • F is the force generated by the pen array on the surface. Increased force can be generated by applying a pressure on the pen array in the z-axis direction, perpendicular to the x- and y-axes of the substrate.
  • the Poisson' s ratio can be in a range of about 0.3 to about 0.5, about 0.4 to about 0.5, or about 0.3 to about 0.4.
  • Other suitable values Poisson' s ratio include, for example, about 0.3, 0.31, 0.32, 0.33, 0.34. 0.35, 0.36, 0.37, 0.38, 0.39, 0.4, 0.41, 0.42, 0.43, 0.44, 0.45, 0.46, 0.47, 0.48, 0.49, and 0.5.
  • the Poisson's ratio is about 0.3.
  • Equation 11 L fsatwre - L t 4-—— F, when I ⁇ :Z t
  • the pen array can be coated with a patterning composition, for example, by immersing the pen array in a patterning solution.
  • the patterning composition can be, for example, adsorbed or absorbed onto to the pens of the pen array.
  • Patterning compositions suitable for use in the disclosed methods include both homogeneous and
  • the patterning composition is coated on the tip array.
  • the term "coating,” as used herein, refers both to coating of the tip array as well adsorption and absorption by the tip array of the patterning composition.
  • the patterning composition can be patterned on a substrate surface by contacting the coated tip array with the substrate surface to deposit the patterning composition onto the substrate surface.
  • suitable patterning compositions for use with Polymer Pen Lithography see, for example, International Patent Publication No. WO 2009/132321, the entire disclosure of which is incorporated herein by reference.
  • suitable patterning compositions for use with Gel Pen Lithography see, for example, International Patent Application No. PCT/US2010/024631, the entire disclosure of which is incorporated herein by reference.
  • Patterning compositions can be liquids, solids, semi-solids, and the like. Patterning compositions suitable for use include, but are not limited to, molecular solutions, polymer solutions, pastes, gels, creams, glues, resins, epoxies, adhesives, metal films, particulates, solders, etchants, and combinations thereof.
  • wet inks can be directly patterned on a substrate surface. Wet inks include inks in the liquid state, including, for example, salt solutions, proteins in buffer, and etchants.
  • the gel polymer pen array can also be used to pattern a patterning composition without the need to include patterning composition carriers in the patterning composition.
  • the patterning composition can be a biomaterial (e.g., albumin) free of exogenous carriers.
  • ink carriers include phospholipids, PEG, hydrogel PEG-DMA, and agarose, for example.
  • Patterning compositions can include materials such as, but not limited to, monolayer-forming species, thin film-forming species, oils, colloids, metals, pre- formed metal nanoparticles, metal nanoparticle precursors, metal complexes, metal oxides, ceramics, organic species (e.g., moieties comprising a carbon-carbon bond, such as small molecules, polymers, polymer precursors, proteins, antibodies, and the like), polymers (e.g., both non-biological polymers and biological polymers such as single and double stranded DNA, RNA, and the like), polymer precursors, dendrimers, nanoparticles, and combinations thereof.
  • materials such as, but not limited to, monolayer-forming species, thin film-forming species, oils, colloids, metals, pre- formed metal nanoparticles, metal nanoparticle precursors, metal complexes, metal oxides, ceramics, organic species (e.g., moieties comprising a carbon-carbon bond, such as small molecules, polymers, polymer precursors, proteins,
  • one or more components of a patterning composition includes a functional group suitable for associating with a substrate, for example, by forming a chemical bond, by an ionic interaction, by a Van der Waals interaction, by an electrostatic interaction, by magnetism, by adhesion, and combinations thereof.
  • the composition can be formulated to control its viscosity.
  • Parameters that can control ink viscosity include, but are not limited to, solvent composition, solvent concentration, thickener composition, thickener concentration, particles size of a component, the molecular weight of a polymeric component, the degree of cross-linking of a polymeric component, the free volume (i.e., porosity) of a component, the swellability of a component, ionic interactions between ink components (e.g., solvent-thickener interactions), and combinations thereof.
  • the patterning composition comprises an additive, such as a solvent, a thickening agent, an ionic species (e.g., a cation, an anion, a zwitterion, etc.) the concentration of which can be selected to adjust one or more of the viscosity, the dielectric constant, the conductivity, the tonicity, the density, and the like.
  • an additive such as a solvent, a thickening agent, an ionic species (e.g., a cation, an anion, a zwitterion, etc.) the concentration of which can be selected to adjust one or more of the viscosity, the dielectric constant, the conductivity, the tonicity, the density, and the like.
  • Suitable thickening agents include, but are not limited to, metal salts of carboxyalkylcellulose derivatives (e.g., sodium carboxymethylcellulose),
  • alkylcellulose derivatives e.g., methylcellulose and ethylcellulose
  • partially oxidized alkylcellulose derivatives e.g., hydroxyethylcellulose, hydroxypropylcellulose and hydroxypropylmethylcellulose
  • starches polyacrylamide gels, homopolymers of poly-N-vinylpyrrolidone, poly(alkyl ethers) (e.g., polyethylene oxide, polyethylene glycol, and polypropylene oxide), agar, agarose, xanthan gums, gelatin, dendrimers, colloidal silicon dioxide, lipids (e.g., fats, oils, steroids, waxes, glycerides of fatty acids, such as oleic, linoleic, linolenic, and arachidonic acid, and lipid bilayers such as from phosphocholine) and combinations thereof.
  • a thickener is present in a concentration of about 0.5% to about 25%, about 1% to about 20%,
  • Suitable solvents for a patterning composition include, but are not limited to, water, C1-C8 alcohols (e.g., methanol, ethanol, propanol and butanol), C6-C12 straight chain, branched and cyclic hydrocarbons (e.g., hexane and cyclohexane), C6- C14 aryl and aralkyl hydrocarbons (e.g., benzene and toluene), C3-C10 alkyl ketones (e.g., acetone), C3-C10 esters (e.g., ethyl acetate), C4-C10 alkyl ethers, and combinations thereof.
  • C1-C8 alcohols e.g., methanol, ethanol, propanol and butanol
  • C6-C12 straight chain, branched and cyclic hydrocarbons e.g., hexane and cyclohexane
  • a solvent is present in a concentration of about 1% to about 99%, about 5% to about 95%, about 10% to about 90%, about 15% to about 95%, about 25% to about 95%, about 50% to about 95%, or about 75% to about 95% by weight of a patterning composition.
  • Patterning compositions can comprise an etchant.
  • an "etchant” refers to a component that can react with a surface to remove a portion of the surface.
  • an etchant is used to form a subtractive feature by reacting with a surface and forming at least one of a volatile and/or soluble material that can be removed from the substrate, or a residue, particulate, or fragment that can be removed from the substrate by, for example, a rinsing or cleaning method.
  • an etchant is present in a concentration of about 0.5% to about 95%, about 1% to about 90%, about 2% to about 85%, about 0.5% to about 10%, or about 1% to about 10% by weight of the patterning composition.
  • Etchants suitable for use in the methods disclosed herein include, but are not limited to, an acidic etchant, a basic etchant, a fluoride-based etchant, and
  • Acidic etchants suitable for use include, but are not limited to, sulfuric acid, trifluoromethanesulfonic acid, fluoro sulfonic acid, trifluoroacetic acid, hydrofluoric acid, hydrochloric acid, carborane acid, and combinations thereof.
  • Basic etchants suitable for use include, but are not limited to, sodium hydroxide, potassium hydroxide, ammonium hydroxide, tetraalkylammonium hydroxide ammonia, ethanolamine, ethylenediamine, and combinations thereof.
  • Fluoride-based etchants suitable for use include, but are not limited to, ammonium fluoride, lithium fluoride, sodium fluoride, potassium fluoride, rubidium fluoride, cesium fluoride, francium fluoride, antimony fluoride, calcium fluoride, ammonium tetrafluoroborate, potassium tetrafluoroborate, and combinations thereof.
  • a hole array can be fabricated through directly etching a gold thin film with a commercial gold etchant using a gel polymer pen array. The diameter of the holes increases with increased contact time and/or applied force between the pen array and the substrate.
  • the patterning composition includes a reactive component.
  • a reactive component refers to a compound or species that has a chemical interaction with a substrate.
  • a reactive component in the ink penetrates or diffuses into the substrate.
  • a reactive component transforms, binds, or promotes binding to exposed functional groups on the surface of the substrate.
  • Reactive components can include, but are not limited to, ions, free radicals, metals, acids, bases, metal salts, organic reagents, and combinations thereof.
  • Reactive components further include, without limitation, monolayer-forming species such as thiols, hydroxides, amines, silanols, siloxanes, and the like, and other monolayer-forming species known to a person of ordinary skill in the art.
  • the reactive component can also include, for example, photo-activated species.
  • the reactive component can be present in a concentration of about 0.001% to about 100%, about 0.001% to about 50%, about 0.001% to about 25%, about 0.001% to about 10%, about 0.001% to about 5%, about 0.001% to about 2%, about 0.001% to about 1%, about 0.001% to about 0.5%, about 0.001% to about 0.05%, about 0.01% to about 10%, about 0.01% to about 5%, about 0.01% to about 2%, about 0.01% to about 1%, about 10% to about 100%, about 50% to about 99%, about 70% to about 95%, about 80% to about 99%, about 0.001%, about 0.005%, about 0.01%, about 0.1%, about 0.5%, about 1%, about 2%, or about 5% weight of the patterning composition.
  • the patterning composition can further comprise a conductive and/or semi- conductive component.
  • a "conductive component” refers to a compound or species that can transfer or move electrical charge.
  • Conductive and semi-conductive components include, but are not limited to, a metal, a nanoparticle, a polymer, a cream solder, a resin, and combinations thereof.
  • a conductive component is present in a concentration of about 1% to about 100%, about 1% to about 10%, about 5% to about 100%, about 25% to about 100%, about 50% to about 100%, about 75% to about 99%, about 2%, about 5%, about 90%, about 95% by weight of the patterning composition.
  • Metals suitable for use in a patterning composition include, but are not limited to, a transition metal, aluminum, silicon, phosphorous, gallium, germanium, indium, tin, antimony, lead, bismuth, alloys thereof, and combinations thereof.
  • the patterning composition comprises a semi- conductive polymer.
  • Semi-conductive polymers suitable for use include, but are not limited to, a polyaniline, a poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), a polypyrrole, an arylene vinylene polymer, a polyphenylenevinylene, a
  • polyacetylene a polythiophene, a polyimidazole, and combinations thereof.
  • the patterning composition can include an insulating component.
  • an "insulating component” refers to a compound or species that is resistant to the movement or transfer of electrical charge.
  • an insulating component has a dielectric constant of about 1.5 to about 8 about 1.7 to about 5, about 1.8 to about 4, about 1.9 to about 3, about 2 to about 2.7, about 2.1 to about 2.5, about 8 to about 90, about 15 to about 85, about 20 to about 80, about 25 to about 75, or about 30 to about 70.
  • Insulating components suitable for use in the methods disclosed herein include, but are not limited to, a polymer, a metal oxide, a metal carbide, a metal nitride, monomeric precursors thereof, particles thereof, and combinations thereof.
  • Suitable polymers include, but are not limited to, a polydimethylsiloxane, a silsesquioxane, a polyethylene, a polypropylene, a polyimide, and combinations thereof.
  • an insulating component is present in a concentration of about 1% to about 95%, about 1% to about 80%, about 1% to about 50%, about 1% to about 20%, about 1% to about 10%, about 20% to about 95%, about 20% to about 90%, about 40% to about 80%, about 1%, about 5%, about 10%, about 90%, or about 95% by weight of the patterning composition.
  • the patterning composition can include a masking component.
  • a “masking component” refers to a compound or species that upon reacting forms a surface feature resistant to a species capable of reacting with the surrounding surface.
  • Masking components suitable for use include materials commonly employed in traditional photolithography methods as "resists" (e.g., photoresists, chemical resists, self-assembled monolayers, etc.).
  • Resists e.g., photoresists, chemical resists, self-assembled monolayers, etc.
  • Masking components suitable for use in the disclosed methods include, but are not limited to, a polymer such as a
  • polyvinylpyrollidone poly(epichlorohydrin-co-ethyleneoxide), a polystyrene, a poly(styrene-co-butadiene), a poly(4-vinylpyridine-co-styrene), an amine terminated poly(styrene-co-butadiene), a poly(acrylonitrile-co-butadiene), a styrene-butadiene- styrene block copolymer, a styrene-ethylene-butylene block linear copolymer, a polystyrene-block-poly(ethylene-ran-butylene)-block-polystyrene, a poly(styrene-co- maleic anhydride), a polystyrene-block-poly(ethylene-ran-butylene)-block- polystyrene-graft-maleic anhydride, a polystyrene-
  • the patterning composition can include a conductive component and a reactive component.
  • a reactive component can promote at least one of: penetration of a conductive component into a surface, reaction between the
  • composition include conductive features selected from the group consisting of:
  • the patterning composition can comprise an etchant and a conductive component, for example, suitable for producing a subtractive surface feature having a conductive feature inset therein.
  • the patterning composition can comprise an insulating component and a reactive component.
  • a reactive component can promote at least one of: penetration of an insulating component into a surface, reaction between the insulating component and a surface, adhesion between an insulating feature and a surface, promoting electrical contact between an insulating feature and a surface, and combinations thereof. Surface features formed by reacting this patterning
  • composition include insulating features selected from the group consisting of: additive non-penetrating, additive penetrating, subtractive penetrating, and conformal penetrating surface features.
  • the patterning composition can comprise an etchant and an insulating component, for example, suitable for producing a subtractive surface feature having an insulating feature inset therein.
  • the patterning composition can comprise a conductive component and a masking component, for example, suitable for producing electrically conductive masking features on a surface.
  • thiols 1,9-nonanedithiol solution
  • silane silazanes
  • alkynes cystamine N-Fmoc protected amino thiols
  • biomolecules DNA, proteins, antibodies, collagen, peptides, biotin, and carbon nanotubes.
  • Substrates suitable for use in methods disclosed herein include, but are not limited to, metals, alloys, composites, crystalline materials, amorphous materials, conductors, semiconductors, optics, fibers, inorganic materials, glasses, ceramics (e.g., metal oxides, metal nitrides, metal silicides, and combinations thereof), zeolites, polymers, plastics, organic materials, minerals, biomaterials, living tissue, bone, films thereof, thin films thereof, laminates thereof, foils thereof, composites thereof, and combinations thereof.
  • ceramics e.g., metal oxides, metal nitrides, metal silicides, and combinations thereof
  • zeolites e.g., polymers, plastics, organic materials, minerals, biomaterials, living tissue, bone, films thereof, thin films thereof, laminates thereof, foils thereof, composites thereof, and combinations thereof.
  • a substrate can comprise a semiconductor such as, but not limited to: crystalline silicon, polycrystalline silicon, amorphous silicon, p-doped silicon, n-doped silicon, silicon oxide, silicon germanium, germanium, gallium arsenide, gallium arsenide phosphide, indium tin oxide, and combinations thereof.
  • a substrate can comprise a glass such as, but not limited to, undoped silica glass (Si0 2 ), fluorinated silica glass, borosilicate glass, borophosphorosilicate glass, organosilicate glass, porous organosilicate glass, and combinations thereof.
  • the substrate can be a non-planar substrate, such as pyrolytic carbon, reinforced carbon-carbon composite, a carbon phenolic resin, and the like, and combinations thereof.
  • a substrate can comprise a ceramic such as, but not limited to, silicon carbide, hydrogenated silicon carbide, silicon nitride, silicon carbonitride, silicon oxynitride, silicon oxycarbide, high-temperature reusable surface insulation, fibrous refractory composite insulation tiles, toughened unipiece fibrous insulation, low-temperature reusable surface insulation, advanced reusable surface insulation, and combinations thereof.
  • a substrate can comprise a flexible material, such as, but not limited to: a plastic, a metal, a composite thereof, a laminate thereof, a thin film thereof, a foil thereof, and combinations thereof.
  • the surfaces to pattern by BPL can include any suitable substrate, and preferably one which can be advantageously affected by exposure to radiation. See International Patent Application No. PCT/US2010/024633, the entire disclosure of which is incorporated herein by reference.
  • the substrate can be photosensitive or can include a photosensitive layer.
  • the photosensitive substrate or photosensitive layer can be a resist layer.
  • the resist layer can be any known resist material, for example SHIPLEY1805 (MicroChem Inc.).
  • Other suitable resist materials include, but are not limited to, Shipleyl813 (MicroChem Inc.), Shipleyl830 (MicroChem Inc.), PHOTORESIST AZ1518 (MicroChemicals,
  • photosensitive materials include, but are not limited to, liquid crystals and metals.
  • the substrate can include metal salts that can be reduced when exposed to the radiation.
  • Substrates suitable for use in methods disclosed herein include, but are not limited to, metals, alloys, composites, crystalline materials, amorphous materials, conductors, semiconductors, optics, fibers, inorganic materials, glasses, ceramics (e.g., metal oxides, metal nitrides, metal silicides, and combinations thereof), zeolites, polymers, plastics, organic materials, minerals, biomaterials, living tissue, bone, and laminates and combinations thereof.
  • the substrate can be in the form of films, thin films, foils, and combinations thereof.
  • a substrate can comprise a semiconductor including, but not limited to one or more of: crystalline silicon, polycrystalline silicon, amorphous silicon, p-doped silicon, n- doped silicon, silicon oxide, silicon germanium, germanium, gallium arsenide, gallium arsenide phosphide, indium tin oxide, graphene, and combinations thereof.
  • a substrate can comprise a glass including, but not limited to, one or more of undoped silica glass (Si0 2 ), fluorinated silica glass, borosilicate glass, borophosphorosilicate glass, organosilicate glass, porous organosilicate glass, and combinations thereof.
  • the substrate can be a non-planar substrate, including, but not limited to, one or more of pyrolytic carbon, reinforced carbon-carbon composite, a carbon phenolic resin, and combinations thereof.
  • a substrate can comprise a ceramic including, but not limited to, one or more of silicon carbide, hydrogenated silicon carbide, silicon nitride, silicon carbonitride, silicon oxynitride, silicon oxycarbide, high-temperature reusable surface insulation, fibrous refractory composite insulation tiles, toughened unipiece fibrous insulation, low-temperature reusable surface insulation, advanced reusable surface insulation, and combinations thereof.
  • a substrate can comprise a flexible material, including, but not limited to one or more of: a plastic, a metal, a composite thereof, a laminate thereof, a thin film thereof, a foil thereof, and combinations thereof.
  • the photosensitive substrate or the photosensitive layer can have any suitable thickness, for example in a range of about 100 nm to about 5000 nm.
  • the minimum photosensitive substrate or photosensitive layer thickness can be about 100, 150, 200, 250, 300, 350, 400, 450 or 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, or 5000 nm.
  • the maximum photosensitive substrate or photosensitive layer thickness can be about 100, 150, 200, 250, 300, 350, 400, 450 or 500, 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000, 1500, 2000, 2500, 3000, 3500, 4000, 4500, or 5000 nm.
  • the diameter of the indicia formed by the pen array can be modulated by modifying the resist material used and/or the thickness of the photosensitive substrate or
  • photosensitive layer For example, under the same radiation conditions, a thicker photosensitive layer can result in indicia having larger diameters. At constant photosensitive layer thickness, an increase in radiation intensity can results in indicia having larger diameters.
  • controllably tilting a polymer pen array to produce combinatorial arrays of feature sizes on a substrate has a variety of applications including, for example, patterning of biomolecules and inorganic materials.
  • combinatorial arrays of metal nanoparticles can be printed using the method in accordance with an embodiment of the disclosure to examine the effect of nanoparticle size on catalysis.
  • Combinatorial arrays produced by a method in accordance with an embodiment of the disclosure also have use in biological applications.
  • such combinatorial arrays can be used to study the size effects on biological processes, such as for example, in monitoring the growth and differentiation of stem cells on patterns with different feature sizes.
  • combinatorial arrays formed by a method in accordance with an embodiment of the disclosure can also be used to examine the effects of geometry on cell adhesion.
  • Combinatorial arrays of metal nanoparticles were generated in order to examine the effect of the nanoparticle size on catalysis.
  • a precursor metal salt, AuCl 3 was dissolved in a patterning solution that consisted of about 0.5 wt.% poly(ethyleneoxide)-b-poly(2-vinylpyridine) dissolved in water.
  • a polymer pen array was coated with the patterning solution. The polymer pen array was leveled and then intentionally, controllably tilted relative to the leveled position in one angle and used to print an array of dots with varying feature size on the substrate surface.
  • FIG. 5a and 5b illustrate the arrays of gold nanoparticles printed on the surface.
  • the single crystal nanoparticles can then be used to catalyze reactions whose rate may be related to the size of the catalytic nanoparticle. Referring to Figure 6, because of the size of the nanoparticles in each array varies down a column, this can allow for a quick screen for the nanoparticle size that exhibits highest catalytic activity. For example, such screening can be done by employing infrared
  • thermography a technique well known in the art for use in combinatorial catalyst screening. See Moates et al., 35 Ind. Eng. Chem. Res. 4801-03 (1996); Holzwarth et al., 37 Angew. Chem. Int. Ed. 2644-47 (1998); Taylor et al., 280 Science 267-70 (1998); and Bell, 299 Science 1688-91 (2003). Since most reactions have a measurable enthalpy of reaction AH rxn , the most active catalyst will appear as a hot (or cold, depending on the sign of AH rxn ) spot in an infrared thermograph. See Holzwarth et al., 37 Angew. Chem. Int. Ed.
  • each nanoparticle may be too small to image directly with an infrared camera, each array, which consists of a large number of identical particles, is large enough to be imaged. It can be inferred that the most active array contains the most active nanoparticles.
  • this printing technique combined with a known screening method can be used to analyze the oxidation of carbon monoxide by gold nanoparticles, the reduction of unsaturated hydrocarbons by platinum and palladium, and the reduction of oxygen by platinum. While the nanoparticle size effects on catalytic activity have been characterized for many of these systems ⁇ see e.g., Koper Fuel Cell Catalysis: A surface Science Approach (John Wiley & Sons, NJ 2009); and Valden et al., 281 Science 1647-1650 (1998)), the method in accordance with an embodiment of the present disclosure allows such screening to be done using a combinatorial approach on a single substrate. Additionally, because of the general applicability of the printing technique and the characterization technique, this method can be applied to virtually any nanoparticle-catalyzed reaction.
  • Example 2 Studying Size Effects on Biological Processes
  • Size- varying combinatorial nanopatterns of the extracellular matrix (ECM) protein fibronectin were written with a tilted pen array to intentionally create a gradient of feature sizes for facile combinatorial screening to determine the feature size that optimally drives stem cell differentiation.
  • the tilted array was used to print patterns of small molecules that bind to an ECM protein (i.e., fibronectin), which subsequently interacted with a cell's focal adhesion complexes, which enable stem cells to adhere to the surface of the combinatorial array, as shown in Figure 8A.
  • Figures 8B and 8C show the stem cell and the combinatorial array of Figure 8A, respectively.
  • the differentiation of stem cells into various lineages is subsequently tracked with immunofluorescent staining specific to the stem cell lineage in question, for example, osteoblasts. See Schieker et al., 210 J. Anat. 592-99 (2007).
  • Patterns generated by deliberately, controllably tilted pen arrays can also be used in the investigation of geometric effects on cell adhesion. It has been shown that cadherin mediates several important cell processes, including apoptosis, cell differentiation, cell movement, and tissue organization. See Kusumi et al., 11 Curr. Opin. Cell. Biol. 582-90 (1999); van Roy et al., 66 Cell Mol. Life Sci. 3756-3788 (2008); Anastasiadis et al., 113 Cell Sci. 1319-1334 (2000); and Leckband et al., 8 Annu. Rev. Biol. Eng. 259-87 (2006).

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Micromachines (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Printing Methods (AREA)

Abstract

La présente invention a trait à un procédé permettant de former un motif doté d'éléments de motif ayant une pluralité de dimensions sur une surface de substrat avec un réseau de plumes inclinées qui inclut une étape consistant à choisir une géométrie d'inclinaison pour un réseau de plumes par rapport à un substrat, à induire la géométrie d'inclinaison entre le réseau de plumes et la surface du substrat, et à former un motif ayant des éléments de motif sur la surface du substrat au moyen du réseau de plumes incliné, ce qui permet de varier la dimension des éléments de motif formés à travers la surface du substrat le long de l'axe ou des axes inclinés. Par exemple, la géométrie d'inclinaison est en référence à la surface du substrat et comprend un premier angle par rapport à un premier axe du substrat et un second angle par rapport à un second axe du substrat, ledit second axe étant perpendiculaire au premier axe, et le premier angle et/ou le second angle étant non nul.
PCT/US2010/058773 2009-12-07 2010-12-02 Génération de motifs combinatoires par inclinaison délibérée d'un réseau de plumes polymère Ceased WO2011071753A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/513,618 US8753813B2 (en) 2009-12-07 2010-12-02 Generation of combinatorial patterns by deliberate tilting of a polymer-pen array

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US26738209P 2009-12-07 2009-12-07
US61/267,382 2009-12-07
US29244410P 2010-01-05 2010-01-05
US61/292,444 2010-01-05
US37568410P 2010-08-20 2010-08-20
US61/375,684 2010-08-20

Publications (2)

Publication Number Publication Date
WO2011071753A2 true WO2011071753A2 (fr) 2011-06-16
WO2011071753A3 WO2011071753A3 (fr) 2011-11-17

Family

ID=44146116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/058773 Ceased WO2011071753A2 (fr) 2009-12-07 2010-12-02 Génération de motifs combinatoires par inclinaison délibérée d'un réseau de plumes polymère

Country Status (2)

Country Link
US (1) US8753813B2 (fr)
WO (1) WO2011071753A2 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012125986A1 (fr) * 2011-03-17 2012-09-20 Northwestern University Procédé d'analyse d'une substance à analyser à l'aide de réseaux combinatoires et de motifs uniformes
WO2014070444A1 (fr) * 2012-10-29 2014-05-08 Northwestern University Systèmes et procédés de lithographie projetés et activés par la chaleur
US20150111764A1 (en) * 2013-10-22 2015-04-23 New York University Polymerized microarrays

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8159825B1 (en) 2006-08-25 2012-04-17 Hypres Inc. Method for fabrication of electrical contacts to superconducting circuits
WO2010096593A2 (fr) * 2009-02-18 2010-08-26 Northwestern University Lithographie au stylo par faisceau
US8745761B2 (en) * 2009-12-07 2014-06-03 Northwestern University Force feedback leveling of tip arrays for nanolithography
JP6127548B2 (ja) * 2013-02-04 2017-05-17 株式会社リコー ペン形入力装置及び電子情報ボードシステム
EP3242163A1 (fr) * 2016-05-06 2017-11-08 The Provost, Fellows, Foundation Scholars, & the other members of Board, of the College of the Holy & Undiv. Trinity of Queen Elizabeth near Dublin Procédé de structuration, structuration et dispositifs d'actionnement à l'aide de matériaux bidimensionnels
CN110114682B (zh) * 2016-12-07 2022-06-24 西北大学 用于微型制造工艺的液体掩模
EP3615226B1 (fr) * 2017-02-02 2024-07-17 Tera-Print, Llc Stratégie d'auto-alignement de contact électrique pour réseaux hautement parallèles en lithographie par sonde à balayage sans porte-à-faux
US11162192B2 (en) 2017-12-01 2021-11-02 Arizona Board Of Regents On Behalf Of Arizona State University Materials and methods relating to single molecule arrays

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5472881A (en) 1992-11-12 1995-12-05 University Of Utah Research Foundation Thiol labeling of DNA for attachment to gold surfaces
US5776748A (en) 1993-10-04 1998-07-07 President And Fellows Of Harvard College Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor
US5846909A (en) 1995-05-22 1998-12-08 University Of Texas System Molecular level, precision control over the interfacial properties of high-TC superconductor structures and devices
US5942397A (en) 1996-12-11 1999-08-24 Tarlov; Michael J. Surface immobilization of biopolymers
US5908692A (en) 1997-01-23 1999-06-01 Wisconsin Alumni Research Foundation Ordered organic monolayers and methods of preparation thereof
JP3194363B2 (ja) 1997-06-25 2001-07-30 財団法人神奈川科学技術アカデミー パターニング方法およびパターニング装置
JP3524343B2 (ja) 1997-08-26 2004-05-10 キヤノン株式会社 微小開口の形成方法と微小開口を有する突起、及びそれらによるプローブまたはマルチプローブ、並びに該プローブを用いた表面観察装置、露光装置、情報処理装置
WO1999048682A1 (fr) 1998-03-27 1999-09-30 University Of Pittsburgh Article, preparation resistant au ternissement, procede de fabrication et procedes d'utilisation associes
JP4121708B2 (ja) 1998-10-13 2008-07-23 ガンブロ ルンデイア アクチーボラグ 生体適合性ポリマーフィルム
US6827979B2 (en) 1999-01-07 2004-12-07 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or produced thereby
US6635311B1 (en) 1999-01-07 2003-10-21 Northwestern University Methods utilizing scanning probe microscope tips and products therefor or products thereby
US6656432B1 (en) * 1999-10-22 2003-12-02 Ngk Insulators, Ltd. Micropipette and dividedly injectable apparatus
US6596346B2 (en) 2000-09-29 2003-07-22 International Business Machines Corporation Silicone elastomer stamp with hydrophilic surfaces and method of making same
JP2003305700A (ja) 2002-04-12 2003-10-28 Canon Inc ナノ構造体及びその製造方法
US7491422B2 (en) 2002-10-21 2009-02-17 Nanoink, Inc. Direct-write nanolithography method of transporting ink with an elastomeric polymer coated nanoscopic tip to form a structure having internal hollows on a substrate
US7034854B2 (en) 2002-11-12 2006-04-25 Nanoink, Inc. Methods and apparatus for ink delivery to nanolithographic probe systems
US20040228962A1 (en) 2003-05-16 2004-11-18 Chang Liu Scanning probe microscopy probe and method for scanning probe contact printing
US20050112505A1 (en) * 2003-11-25 2005-05-26 Huang Wen C. Field-assisted micro- and nano-fabrication method
CA2564876C (fr) 2004-04-30 2013-04-16 Bioforce Nanosciences, Inc. Procede et appareil pour le depot d'un materiau sur une surface
WO2006031455A2 (fr) 2004-09-13 2006-03-23 Dow Corning Corporation Technique de lithographie dans laquelle sont utilises des moules en silicone
US7883839B2 (en) * 2005-12-08 2011-02-08 University Of Houston Method and apparatus for nano-pantography
JP2009534200A (ja) 2006-04-19 2009-09-24 ノースウエスタン ユニバーシティ ２次元ペン配列を有する並列リソグラフィのための物品
US20080309688A1 (en) 2007-03-13 2008-12-18 Nanolnk, Inc. Nanolithography with use of viewports
CA2714005A1 (fr) 2008-02-05 2009-08-13 Nanoink, Inc. Mise a niveau de reseau et de reseau de cantilevers
KR20110014606A (ko) 2008-04-25 2011-02-11 노오쓰웨스턴 유니버시티 폴리머 펜 리소그라피
JP2012518294A (ja) 2009-02-18 2012-08-09 ノースウェスタン ユニバーシティ ゲルポリマペンリソグラフィー
WO2010096593A2 (fr) 2009-02-18 2010-08-26 Northwestern University Lithographie au stylo par faisceau

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012125986A1 (fr) * 2011-03-17 2012-09-20 Northwestern University Procédé d'analyse d'une substance à analyser à l'aide de réseaux combinatoires et de motifs uniformes
WO2014070444A1 (fr) * 2012-10-29 2014-05-08 Northwestern University Systèmes et procédés de lithographie projetés et activés par la chaleur
CN104903793A (zh) * 2012-10-29 2015-09-09 西北大学 热启动和投影平版印刷系统和方法
US9766551B2 (en) 2012-10-29 2017-09-19 Northwestern University Heat actuated and projected lithography systems and methods
US20150111764A1 (en) * 2013-10-22 2015-04-23 New York University Polymerized microarrays

Also Published As

Publication number Publication date
US20130040856A1 (en) 2013-02-14
US8753813B2 (en) 2014-06-17
WO2011071753A3 (fr) 2011-11-17

Similar Documents

Publication Publication Date Title
US8753813B2 (en) Generation of combinatorial patterns by deliberate tilting of a polymer-pen array
US10474029B2 (en) Polymer pen lithography
US20120128882A1 (en) Gel polymer pen lithography
US20150309073A1 (en) Multifunctional graphene coated scanning tips
US8961853B2 (en) Silicon pen nanolithography
US9766551B2 (en) Heat actuated and projected lithography systems and methods
US8745761B2 (en) Force feedback leveling of tip arrays for nanolithography
KR20120013984A (ko) 폴리머 펜 리소그래피에 의해 제조된 멀티플렉스 바이오분자 어레이
US20140038849A1 (en) Method of analyzing an analyte using combinatorial arrays and uniform patterns
US9971239B2 (en) Silica polymer pen lithography
US10203598B2 (en) Gradient spray coating polymer pen arrays
HK1156704B (en) Polymer pen lithography

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10836447

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 13513618

Country of ref document: US

122 Ep: pct application non-entry in european phase

Ref document number: 10836447

Country of ref document: EP

Kind code of ref document: A2