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WO2011071380A1 - Procédé de fabrication d'une structure multicouche avec un motif latéral destiné à être utilisé dans la plage de longueurs d'onde xuv, et structures bf et lmag fabriquées selon ce procédé - Google Patents

Procédé de fabrication d'une structure multicouche avec un motif latéral destiné à être utilisé dans la plage de longueurs d'onde xuv, et structures bf et lmag fabriquées selon ce procédé Download PDF

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Publication number
WO2011071380A1
WO2011071380A1 PCT/NL2010/050832 NL2010050832W WO2011071380A1 WO 2011071380 A1 WO2011071380 A1 WO 2011071380A1 NL 2010050832 W NL2010050832 W NL 2010050832W WO 2011071380 A1 WO2011071380 A1 WO 2011071380A1
Authority
WO
WIPO (PCT)
Prior art keywords
multilayer structure
lateral
pattern
layers
boron carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/NL2010/050832
Other languages
English (en)
Inventor
Frederik Bijkerk
Wilfred Gerard Van Der Wiel
Robert Van Der Meer
Petronella Emerentiana Hegeman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Malvern Panalytical BV
Original Assignee
Panalytical BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panalytical BV filed Critical Panalytical BV
Priority to CN2010800560817A priority Critical patent/CN102792222A/zh
Priority to JP2012543036A priority patent/JP5782451B2/ja
Priority to EP10796182.3A priority patent/EP2510397B1/fr
Priority to US13/515,127 priority patent/US20130220971A1/en
Publication of WO2011071380A1 publication Critical patent/WO2011071380A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Definitions

  • the invention relates to a method for manufacturing a multilayer structure with a lateral pattern, in particular of an optical grating for application in an optical device for electromagnetic radiation with a wavelength in the wavelength range between 0.1 nro and 100 nm, comprising the steps of (i) providing a multilayer structure, and (ii) arranging a
  • the wavelength range between 0.1 nm and 10 m comprises the hard X-ray range ⁇ wavelength between 0.1 nm and 10 nm) and the so-called XUV range ⁇ wavelength between 10 nm and 100 nm) which includes the range around a wavelength of 13.5 nm, referred to in literature as EUV radiation, as well as
  • Such an optical grating is for instance applied in the production of semiconductor circuits within the technical field of nanolithography .
  • a particular example of such an optical grating is a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg grating , a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg grating , a so-called nano-Bragg-Fresnel (BF) structure, which forms a combination of a reflective optical element, a Bragg
  • BF nano-Bragg-Fresnel
  • LMAG lamellar multilayer amplitude grating
  • DOV photolithography encounters problems of a fundamental nature at resolution levels in the structure to be
  • Both methods have the drawback that the width of a lamella in a periodic lateral pattern amounts to a minimum of several hundred nanometres, while the period amounts to at least one pm.
  • step (ii) of arranging the lateral pattern is performed by means of a method for nano- imprint lithography (NIL) .
  • the method for nano-imprint lithography for instance comprises at least the steps of (a) providing a stamp with a stamp pattern corresponding to the lateral three-dimensional pattern to be arranged, (b) applying a layer of a curable resist material to the multilayer
  • step (c) arranging the stamp pattern, using the stamp, in the layer of resist material applied according to step (b) , and curing this material, and (d) removing from the multilayer structure material not, or at least substantially not covered by resist material in accordance with the stamp pattern while forming the lateral three-dimensional pattern in the multilayer structure.
  • a metal layer is deposited, prior to step (b) or following step ⁇ c) , onto the multilayer structure which is flat or provided with a lateral pattern, and is subsequently applied as etching mask.
  • the stamp to be provided according to the invention is for instance manufactured from Si or S1O 2 (quartz) , in which the stamp pattern is arranged in accordance with a per se known method, for instance by means of electron beam
  • EBL lithography
  • laser interference lithography lithography
  • the layer of resist material is removed using a solvent, and the multilayer structure provided with a three-dimensional pattern can be subjected to a subsequent process step.
  • step (d) is for instance performed in accordance with a method for reactive ion etching (RIE) , by means of an inductively coupled plasma (ICP) or according to a Bosch-type etching method.
  • RIE reactive ion etching
  • ICP inductively coupled plasma
  • the lateral three-dimensional pattern to be formed in the multilayer structure in step (d) is given a parallel, widening wedge-shaped or narrowing wedge-shaped form from the surface of the multilayer structure.
  • the resist material to be applied according to step (b) is preferably a UV-curable plastic which in cured state has a relatively low viscosity, for instance a polymethyl
  • PMMA methacrylate
  • step (ii) of arranging the lateral pattern is followed by step (iii) of applying a cover layer over the three-dimensional pattern.
  • the invention also relates to a multilayer structure with a periodic lateral pattern manufactured according to the above described method, wherein the period is smaller than 1 ⁇ .
  • the invention also relates to a BF structure manufactured according to the above described method, wherein the
  • multilayer structure comprises a stack of layers of a first material from a first group comprising carbon (C) and silicon (Si) and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
  • the layers of the second material are selected from the group of transition elements comprising cobalt (Co) , nickel (Ni) , molybdenum (Mo) , tungsten (W) , rhenium (Re) and iridium (Ir) .
  • an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
  • the invention further relates to an LMAG structure manufactured according to the above described method, wherein the multilayer structure comprises a stack of layers of a first material from a first group comprising boron (B), boron carbide (B 4 C) , carbon (C) , silicon (Si) and scandium (Sc) , and of layers of a second material from a second group comprising the materials from the groups of transition elements from the fourth, fifth and sixth period of the periodic system of elements.
  • B boron
  • B 4 C boron carbide
  • C carbon
  • Si silicon
  • Sc scandium
  • the multilayer structure is selected from the group comprising stacks of layers of tungsten and silicon (W/Si) , tungsten and boron carbide (W/B 4 C) , molybdenum and boron carbide (M0/B 4 C) , lanthanum and boron carbide (La/B 4 C) , chromium and carbon (Cr/C) , iron and scandium (Fe/Sc), chromium and scandium (Cr/Sc) , nickel and carbon (Ni/C) and nickel vanadium and carbon (NiV/C)
  • a multilayer structure comprising a stack of layers of lanthanum and boron carbide (La B4C) the layers of lanthanum and boron carbide are separated by layers of lanthanum boride (LaB) , these layers functioning as diffusion barrier.
  • La B4C lanthanum and boron carbide
  • an optical element becomes available which can be applied for wavelength selection, focusing and collimation of radiation in the wavelength range between 0.1 nm and 100 nm with an efficiency which is not achievable with a prior art
  • FIG. 1 shows a schematic representation of the application of an LMAG structure 1 according to the invention as monochromator .
  • LMAG structure 1 is formed by a substrate 2, for instance of Si0 2 , having thereon a
  • a beam of XUV radiation (represented by arrow 5) with a wavelength ⁇ 0 is incident upon the surface of LMAG-structure 1 at an angle ⁇ > to the surface of LMAG-structure 1.
  • the incident beam is diffracted by LMAG-structure 1 in an exiting zeroth order beam I 0 , first order beams Ii, I-i, second order beams I2, I-2 and higher order beams (not shown) . It has been found that using an LMAG structure 1
  • a monochromator can be provided which has a markedly lower dispersion (higher resolution) than with a flat, otherwise identical multilayer structure without lateral structure, wherein the reflectivity of the LMAG structure decreases to only slight extent compared to the reflectivity of the flat multilayer structure.
  • An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 150 layers 3 consisting of Cr (layer thickness 2.125 nm, roughness 0.312 nm) and layers 4
  • An LMAG structure 1 according to fig. 1 is constructed from a periodic stack of 400 layers 3 consisting of W (layer thickness 0.715 nm, roughness 0.248 nm) and layers 4

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une structure multicouche comprenant un motif latéral, notamment un réseau optique en vue d'une utilisation dans un dispositif optique pour un rayonnement électromagnétique ayant une longueur d'onde se situant dans une plage de longueurs d'onde comprise entre 0,1 nm et 100 nm, lequel procédé comprend les étapes consistant à : (i) utiliser une structure multicouche; et (ii) créer un motif tridimensionnel latéral dans la structure multicouche, l'étape (ii) consistant à créer le motif latéral étant effectuée au moyen d'un procédé de lithographie par nano-empreinte (NIL). L'invention concerne également des structures BF et LMAG fabriquées au moyen de ce procédé.
PCT/NL2010/050832 2009-12-11 2010-12-08 Procédé de fabrication d'une structure multicouche avec un motif latéral destiné à être utilisé dans la plage de longueurs d'onde xuv, et structures bf et lmag fabriquées selon ce procédé Ceased WO2011071380A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800560817A CN102792222A (zh) 2009-12-11 2010-12-08 用于制造应用于xuv波长范围的具有横向图案的多层结构的方法以及根据该方法制造的bf结构和lmag结构
JP2012543036A JP5782451B2 (ja) 2009-12-11 2010-12-08 Ｘｕｖ波長範囲内で使用する横方向パターンを有する多層構造体の製造方法、及びこの方法によって製造されるｂｆ構造体及びｌｍａｇ構造体
EP10796182.3A EP2510397B1 (fr) 2009-12-11 2010-12-08 Procédé de fabrication d'une structure multicouche avec un motif latéral destiné à être utilisé dans la plage de longueurs d'onde xuv, et structures bf et lmag fabriquées selon ce procédé
US13/515,127 US20130220971A1 (en) 2009-12-11 2010-12-08 Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2003950A NL2003950C2 (nl) 2009-12-11 2009-12-11 Werkwijze voor het vervaardigen van een meerlagenstructuur met een lateraal patroon voor toepassing in het xuv-golflengtegebied en volgens deze werkwijze vervaardigde bt- en lmag-structuren.
NL2003950 2009-12-11

Publications (1)

Publication Number Publication Date
WO2011071380A1 true WO2011071380A1 (fr) 2011-06-16

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PCT/NL2010/050832 Ceased WO2011071380A1 (fr) 2009-12-11 2010-12-08 Procédé de fabrication d'une structure multicouche avec un motif latéral destiné à être utilisé dans la plage de longueurs d'onde xuv, et structures bf et lmag fabriquées selon ce procédé

Country Status (6)

Country Link
US (1) US20130220971A1 (fr)
EP (1) EP2510397B1 (fr)
JP (1) JP5782451B2 (fr)
CN (1) CN102792222A (fr)
NL (1) NL2003950C2 (fr)
WO (1) WO2011071380A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103018819A (zh) * 2012-11-09 2013-04-03 浙江大学 基于纳米压印的高分子微纳光纤布拉格光栅制备方法
US20130220971A1 (en) * 2009-12-11 2013-08-29 Panalytical B.V. Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101827814B1 (ko) * 2016-04-15 2018-02-12 한국기계연구원 나노임프린트 방식을 이용한 3차원 구조체의 제조방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266693A1 (en) * 2004-06-01 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20060162863A1 (en) * 2005-01-21 2006-07-27 Hyung-Joon Kim Semiconductor plasma-processing apparatus and method
WO2007057500A1 (fr) * 2005-11-18 2007-05-24 Nanocomp Oy Ltd Procede destine a la production d’un element de reseau de diffraction
US20070128875A1 (en) * 2005-12-02 2007-06-07 Jessing Jeffrey R Dry etch release method for micro-electro-mechanical systems (MEMS)
US20090170327A1 (en) * 2007-12-28 2009-07-02 Sumitomo Electric Industries, Ltd. Method of manufacturing a semiconductor device

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0816720B2 (ja) * 1992-04-21 1996-02-21 日本航空電子工業株式会社 軟ｘ線多層膜反射鏡
JPH07120607A (ja) * 1993-10-22 1995-05-12 Hitachi Ltd 光学素子及びその製造方法
JPH09326347A (ja) * 1996-06-05 1997-12-16 Hitachi Ltd 微細パターン転写方法およびその装置
GB2329484A (en) * 1997-09-22 1999-03-24 Northern Telecom Ltd Writing Bragg reflection gratings in optical waveguides
JP4208447B2 (ja) * 2001-09-26 2009-01-14 独立行政法人科学技術振興機構 Ｓｏｇを用いた室温ナノ−インプリント−リソグラフィー
JP4954498B2 (ja) * 2004-06-01 2012-06-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3913765B1 (ja) * 2005-12-28 2007-05-09 株式会社エンプラス 偏光位相差板
JP2008053666A (ja) * 2006-08-28 2008-03-06 Meisho Kiko Kk パターン形成方法およびパターン形成体
JP4996488B2 (ja) * 2007-03-08 2012-08-08 東芝機械株式会社 微細パターン形成方法
JP4453767B2 (ja) * 2008-03-11 2010-04-21 ソニー株式会社 ホログラム基板の製造方法
EP2280813B1 (fr) * 2008-04-18 2017-06-07 Massachusetts Institute Of Technology Modelage par impression de surface irrégulière
WO2010091907A1 (fr) * 2009-02-13 2010-08-19 Asml Netherlands B.V. Miroir multicouches et appareil lithographique
NL2003950C2 (nl) * 2009-12-11 2011-06-15 Panalytical Bv Werkwijze voor het vervaardigen van een meerlagenstructuur met een lateraal patroon voor toepassing in het xuv-golflengtegebied en volgens deze werkwijze vervaardigde bt- en lmag-structuren.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050266693A1 (en) * 2004-06-01 2005-12-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US20060162863A1 (en) * 2005-01-21 2006-07-27 Hyung-Joon Kim Semiconductor plasma-processing apparatus and method
WO2007057500A1 (fr) * 2005-11-18 2007-05-24 Nanocomp Oy Ltd Procede destine a la production d’un element de reseau de diffraction
US20070128875A1 (en) * 2005-12-02 2007-06-07 Jessing Jeffrey R Dry etch release method for micro-electro-mechanical systems (MEMS)
US20090170327A1 (en) * 2007-12-28 2009-07-02 Sumitomo Electric Industries, Ltd. Method of manufacturing a semiconductor device

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BENBALAGH R ET AL: "Lamellar multilayer amplitude grating as soft-X-ray Bragg monochromator", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION - A:ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, ELSEVIER, AMSTERDAM, NL LNKD- DOI:10.1016/J.NIMA.2004.12.015, vol. 541, no. 3, 11 April 2005 (2005-04-11), pages 590 - 597, XP025295685, ISSN: 0168-9002, [retrieved on 20050411] *
HAUSSLER D ET AL: "TEM characterization of La/B4C multilayer systems by the geometric phase method", PHYSICA STATUS SOLIDI A WILEY-VCH GERMANY, vol. 202, no. 12, September 2005 (2005-09-01), pages 2299 - 2308, XP002591296, ISSN: 0031-8965 *
HAUSSLER ET AL: "Quantitative TEM characterizations of La/B4C and Mo/B4C ultrathin multilayer gratings by the geometric phase method", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL LNKD- DOI:10.1016/J.MEE.2006.10.060, vol. 84, no. 3, 15 February 2007 (2007-02-15), pages 454 - 459, XP005890124, ISSN: 0167-9317 *
TSARFATI T ET AL: "Reflective multilayer optics for 6.7 nm wavelength radiation sources and next generation lithography", THIN SOLID FILMS ELSEVIER SEQUOIA S.A. SWITZERLAND, vol. 518, no. 5, 31 December 2009 (2009-12-31), pages 1365 - 1368, XP002591295, ISSN: 0040-6090 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130220971A1 (en) * 2009-12-11 2013-08-29 Panalytical B.V. Method for manufacturing a multilayer structure with a lateral pattern for application in the xuv wavelength range, and bf and lmag structures manufactured according to this method
CN103018819A (zh) * 2012-11-09 2013-04-03 浙江大学 基于纳米压印的高分子微纳光纤布拉格光栅制备方法
CN103018819B (zh) * 2012-11-09 2014-05-21 浙江大学 基于纳米压印的高分子微纳光纤布拉格光栅制备方法

Also Published As

Publication number Publication date
NL2003950C2 (nl) 2011-06-15
EP2510397A1 (fr) 2012-10-17
EP2510397B1 (fr) 2015-01-14
JP5782451B2 (ja) 2015-09-24
JP2013513940A (ja) 2013-04-22
CN102792222A (zh) 2012-11-21
US20130220971A1 (en) 2013-08-29

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