[go: up one dir, main page]

WO2011071227A1 - Module de piles solaires - Google Patents

Module de piles solaires Download PDF

Info

Publication number
WO2011071227A1
WO2011071227A1 PCT/KR2010/004800 KR2010004800W WO2011071227A1 WO 2011071227 A1 WO2011071227 A1 WO 2011071227A1 KR 2010004800 W KR2010004800 W KR 2010004800W WO 2011071227 A1 WO2011071227 A1 WO 2011071227A1
Authority
WO
WIPO (PCT)
Prior art keywords
current collector
solar cell
semiconductor substrate
hole
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/004800
Other languages
English (en)
Inventor
Juwan Kang
Jiweon Jeong
Jonghwan Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of WO2011071227A1 publication Critical patent/WO2011071227A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H10F19/85—Protective back sheets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • Embodiments of the invention relate to a solar cell module including a plurality of solar cells.
  • a solar cell generally includes a p-type semiconductor substrate, an n-type emitter layer on one surface, for example, a light receiving surface of the p-type semiconductor substrate, and a first electrode and a second electrode respectively formed on the substrate and the emitter layer.
  • the first and second electrodes are respectively formed on the different semiconductors.
  • At least one current collector such as a bus bar is formed in each of the first and second electrodes.
  • electrons inside the semiconductors become free electrons (hereinafter referred to as "electrons") by the photoelectric effect.
  • electrons and holes respectively move to the n-type semiconductor (e.g., the emitter layer) and the p-type semiconductor (e.g., the substrate) in accordance with the principle of p-n junction.
  • the holes moving to the substrate and the electrons moving to the emitter layer are respectively collected by the first electrode and the second electrode respectively connected to the substrate and the emitter layer. Then, the holes and the electrons move to the respective current collectors connected to the first and second electrodes.
  • a solar cell module fabricated by connecting solar cells each having the above-described structure in series or in parallel to one another is used to obtain a desired output.
  • the solar cell module is a moisture-proof module fabricated in a panel form.
  • the electrons and the holes collected by the current collectors of each solar cell are collected by a junction box formed on a back surface of the solar cell module, and an interconnector, for example, a ribbon is used to connect the solar cells to one another.
  • all of the solar cells each include the semiconductor substrate of the same conductive type.
  • one terminal of the interconnector is connected to the first electrode positioned on a light receiving surface of one solar cell
  • the other terminal of the interconnector is connected to the second electrode positioned on a surface opposite a light receiving surface of another solar cell adjacent to the one solar cell.
  • the space for the interconnector has to be secured between the solar cells.
  • a magnitude of the space i.e., a distance between the solar cells is constant, for example, about 3 mm or more. Accordingly, there is a limit to a reduction in the size of the solar cell module.
  • a solar cell module including at least one first solar cell, a first electron current collector, and a first hole current collector, at least one of the first electron current collector and the first hole current collector being positioned on a back surface of the first semiconductor substrate, at least one second solar cell, a second hole current collector, and a second electron current collector, at least one of the second hole current collector and the second electron current collector being positioned on a back surface of the second semiconductor substrate, an upper protective layer positioned on the at least one first solar cell and the at least one second solar cell, a transparent member positioned on the upper protective layer, a lower protective layer positioned under the at least one first solar cell and the at least one second solar cell, and a back sheet positioned under the lower protective layer, wherein the back sheet has at least one conductive pattern for electrically connecting the at least one of the first electron current collector and the first hole current collector on the back surface of the first semiconductor substrate to the at least one of the second hole current collector and the second electron current collector on the back surface of the second semiconductor substrate, and
  • FIG. 1 is an exploded perspective view of a solar cell module according to an embodiment of the invention
  • FIG. 2 is a cross-sectional view taken along a direction X-X' of FIG. 1;
  • FIG. 3 is a cross-sectional view taken along a direction Y-Y' of FIG. 1;
  • FIG. 4 is a partial perspective view of a first solar cell according to an embodiment of the invention.
  • FIG. 5 is a partial perspective view of a second solar cell according to an embodiment of the invention.
  • FIG. 6 is a plane view of a back sheet according to an embodiment of the invention.
  • FIG. 7 is a perspective view of a solar cell module according to another embodiment of the invention.
  • FIG. 8 is a partial perspective view of a first solar cell according to another embodiment of the invention.
  • FIG. 9 is a partial perspective view of a second solar cell according to another embodiment of the invention.
  • FIG. 10 is a plane view of a back sheet according to another embodiment of the invention.
  • FIG. 1 is an exploded perspective view of a solar cell module according to an embodiment of the invention.
  • FIGS. 2 and 3 are cross-sectional views illustrating an arrangement structure and an electrical connection structure of a plurality of solar cells before a lamination process is performed.
  • FIG. 2 is a cross-sectional view taken along a direction X-X' of FIG. 1
  • FIG. 3 is a cross-sectional view taken along a direction Y-Y'of FIG. 1.
  • a solar cell module includes a plurality of solar cells 110 and 210, an interconnector 10 and a plurality of conductive patterns 52 for electrically connecting the plurality of solar cells 110 and 210 to one another, upper and lower protective layers 20 and 30 for protecting the solar cells 110 and 210, a transparent member 40 on the upper protective layer 20 that is positioned near to light receiving surfaces of the solar cells 110 and 210, a back sheet 50 underlying the lower protective layer 30 that is positioned near to surfaces opposite the light receiving surfaces of the solar cells 110 and 210, and a frame receiving the components 110, 210, 10, 52, 20, 30, 40, and 50 that form an integral body through a lamination process.
  • the back sheet 50 prevents moisture or oxygen from penetrating into a back surface of the solar cell module, thereby protecting the solar cells 110 and 210 from an external environment.
  • the back sheet 50 may have a multi-layered structure including a moisture/oxygen penetrating prevention layer, a chemical corrosion prevention layer, a layer having insulating characteristics, etc.
  • the upper and lower protective layers 20 and 30 and the solar cells 110 and 210 form an integral body when a lamination process is performed in a state where the upper and lower protective layers 20 and 30 are respectively positioned on and under the solar cells 110 and 210.
  • the upper and lower protective layers 20 and 30 prevent corrosion of metal resulting from the moisture penetration and protect the solar cells 110 and 210 from an impact.
  • the upper and lower protective layers 20 and 30 may be formed of ethylene vinyl acetate (EVA), polyvinyl butyral (PVB), partial oxide of ethylene vinyl acetate (EVA), silicon resin, ester-based resin, and olefin-based resin. Other materials may be used.
  • the transparent member 40 on the upper protective layer 20 is formed of a tempered glass having a high light transmittance and excellent damage prevention characteristic.
  • the tempered glass may be a low iron tempered glass containing a small amount of iron.
  • the transparent member 40 may have an embossed inner surface so as to increase a scattering effect of light.
  • a method of manufacturing the solar cell module sequentially includes testing the solar cells 110 and 210, electrically connecting the tested solar cells 110 and 210 to one another using the interconnector 10 and the conductive patterns 52, sequentially disposing the components 110, 210, 20, 30, 40, and 50, for example, sequentially disposing the back sheet 50, the lower protective layer 30, the solar cells 110 and 210, the upper protective layer 20, and the transparent member 40 from the bottom of the solar cell module in the order named, performing the lamination process in a vacuum state to form an integral body of the components 110, 210, 20, 30, 40, and 50, performing an edge trimming process, testing the solar cell module, and the like.
  • the plurality of solar cells 110 and 210 disposed between the upper protective layer 20 and the lower protective layer 30 include at least one first solar cell 110 and at least one second solar cell 210.
  • FIG. 4 is a partial perspective view of the first solar cell 110
  • FIG. 5 is a partial perspective view of the second solar cell 210.
  • the first solar cell 110 includes a first semiconductor substrate 112 formed of first conductive type silicon, for example, p-type silicon, though not required. Silicon used in the first semiconductor substrate 112 may be single crystal silicon, polycrystalline silicon, or amorphous silicon. When the first semiconductor substrate 112 is of a p-type, the first semiconductor substrate 112 contains impurities of a group III element such as boron (B), gallium (Ga), and indium (In).
  • a group III element such as boron (B), gallium (Ga), and indium (In).
  • the surface of the first semiconductor substrate 112 may be textured to form a textured surface corresponding to an uneven surface or having uneven characteristics.
  • the surface of the first semiconductor substrate 112 is the textured surface, a light reflectance in a light receiving surface of the first semiconductor substrate 112 is reduced. Further, because both a light incident operation and a light reflection operation are performed on the textured surface of the first semiconductor substrate 112, light is confined in the first solar cell 110. Hence, a light absorption increases, and efficiency of the first solar cell 110 is improved. In addition, because a reflection loss of light incident on the first semiconductor substrate 112 decreases, an amount of light incident on the first semiconductor substrate 112 further increases.
  • An emitter layer 114 is positioned in the light receiving surface of the first semiconductor substrate 112.
  • the emitter layer 114 is an impurity region doped with impurities of a second conductive type (for example, an n-type) opposite the first conductive type of the first semiconductor substrate 112.
  • the emitter layer 114 forms a p-n junction along with the first semiconductor substrate 112.
  • the emitter layer 114 may be formed by doping the first semiconductor substrate 112 with impurities of a group V element such as phosphor (P), arsenic (As), and antimony (Sb).
  • a plurality of first electron electrodes 116 are positioned on the emitter layer 114 to be spaced apart from one another.
  • the first electron electrodes 116 are electrically connected to the emitter layer 114 and extend in one direction.
  • Each of the first electron electrodes 116 collects carriers (e.g., electrons) moving to the emitter layer 114.
  • the first electron electrodes 116 are formed of at least one conductive material.
  • the conductive material may be at least one selected from the group consisting of nickel (Ni), copper (Cu), silver (Ag), aluminum (Al), tin (Sn), zinc (Zn), indium (In), titanium (Ti), gold (Au), and a combination thereof.
  • Other conductive materials may be used for the first electron electrodes 116.
  • At least one first electron current collector 118 is positioned on the emitter layer 114.
  • the first electron current collector 118 referred to as a bus bar is formed in a direction crossing the first electron electrodes 116.
  • the first electron current collector 118 is electrically connected to the emitter layer 114 and the first electron electrodes 116.
  • the first electron current collector 118 outputs the carriers (e.g., electrons) transferred from the first electron electrodes 116 to an external device.
  • the first electron current collector 118 is formed of at least one conductive material.
  • the conductive material may be at least one selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, In, Ti, Au, and a combination thereof. Other conductive materials may be used for the first electron current collector 118.
  • the first electron current collector 118 may contain the same material as or a different material from the first electron electrodes 116.
  • the first electron electrodes 116 and the first electron current collector 118 may be electrically connected to the emitter layer 114 in a process in which the conductive material is coated on an anti-reflection layer 120, is patterned in a pattern form shown in FIG. 2, and is fired.
  • the anti-reflection layer 120 is formed on the emitter layer 114 on which the first electron electrodes 116 and the first electron current collector 118 are not formed.
  • the anti-reflection layer 120 is formed of silicon nitride (SiNx) and/or silicon dioxide (SiO 2 ). Other materials may be used.
  • the anti-reflection layer 120 reduces a reflectance of light incident on the first solar cell 110 and increases a selectivity of a predetermined wavelength band, thereby increasing the efficiency of the first solar cell 110.
  • the anti-reflection layer 120 may have a thickness of about 70 nm to 80 nm. The anti-reflection layer 120 may be omitted, if desired.
  • a first hole electrode 122 is positioned on a surface (i.e., a back surface of the first semiconductor substrate 112) opposite the light receiving surface of the first semiconductor substrate 112.
  • the first hole electrode 122 collects carriers (e.g., holes) moving to the first semiconductor substrate 112.
  • the first hole electrode 122 is formed of at least one conductive material.
  • the conductive material may be at least one selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, In, Ti, Au, and a combination thereof. Other conductive materials may be used for the first hole electrode 122.
  • a first hole current collector 124 is positioned under the first hole electrode 122.
  • the first hole current collector 124 is formed in a direction crossing the first electron electrodes 116, i.e., in a direction parallel to the first electron current collector 118.
  • the first hole current collector 124 is electrically connected to the first hole electrode 122.
  • the first hole current collector 124 outputs the carriers (e.g., holes) transferred from the first hole electrode 122 to the external device.
  • the first hole current collector 124 is formed of at least one conductive material.
  • the conductive material may be at least one selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, In, Ti, Au, and a combination thereof. Other conductive materials may be used for the first hole current collector 124.
  • the first solar cell 110 may further include a back surface field (BSF) layer between the first hole electrode 122 and the first semiconductor substrate 112.
  • the back surface field layer is a region (e.g., a p + -type region) that is more heavily doped with impurities of the same conductive type as the first semiconductor substrate 112 than the first semiconductor substrate 112.
  • the back surface field layer serves as a potential barrier of the first semiconductor substrate 112.
  • Configuration of the second solar cell 210 is substantially the same as the first solar cell 110, except that conductive types of the corresponding components of the first and second solar cells 110 and 210 are opposite to each other.
  • the configuration of the second solar cell 210 may be briefly described with reference to FIG. 5.
  • a second semiconductor substrate 212 of the second solar cell 210 is formed of second conductive type silicon, for example, n-type silicon, though not required.
  • the second semiconductor substrate 212 may contain impurities of a group V element such as phosphor (P), arsenic (As), and antimony (Sb).
  • the emitter layer 214 is of the first conductive type (e.g., a p-type).
  • the emitter layer 214 may be formed by doping the second semiconductor substrate 212 with impurities of a group III element such as boron (B), gallium (Ga), and indium (In).
  • a plurality of second hole electrodes 216 and at least one second hole current collector 218 are positioned on the emitter layer 214, and a second electron electrode 222 and a second electron current collector 224 are positioned on a back surface of the second semiconductor substrate 212.
  • the second solar cell 210 includes an anti-reflection layer 220.
  • the second solar cell 210 may have a textured surface of the second semiconductor substrate 212 in the same manner as the first solar cell 110 and may further include a back surface field layer.
  • the second hole electrodes 216, the second hole current collector 218, the second electron electrode 222, and the second electron current collector 224 may be formed of at least one conductive material selected from the group consisting of Ni, Cu, Ag, Al, Sn, Zn, In, Ti, Au, and a combination thereof. Other conductive materials may be used.
  • FIGS. 4 and 5 illustrate that the first hole current collector 124 is positioned on the first hole electrode 122 and the second electron current collector 224 is positioned on the second electron electrode 222.
  • the first hole electrode 122 and the first hole current collector 124 may be formed on the same plane (or the same plane level or may be coplanar), and the second electron electrode 222 and the second electron current collector 224 may be formed on the same plane (or the same plane level or may be coplanar).
  • the first hole current collector 124 may be positioned on the back surface of the first semiconductor substrate 112 on which the first hole electrode 122 is not formed, and the second electron current collector 224 may be positioned on the back surface of the second semiconductor substrate 212 on which the second electron electrode 222 is not formed.
  • the first hole electrode 122 and the first hole current collector 124 are formed in the same direction, and the second electron electrode 222 and the second electron current collector 224 are formed in the same direction.
  • the first solar cells 110 and the second solar cells 210 are arranged in a matrix structure.
  • FIG. 1 illustrates that the solar cells 110 and 210 on the lower protective layer 30 have a structure of 3 ⁇ 3 matrix, the number of solar cells 110 and 210 in row and/or column directions may vary, if necessary.
  • At least one first solar cell 110 and at least one second solar cell 210 are arranged adjacently to each other.
  • the first solar cells 110 and the second solar cells 210 may be alternately arranged.
  • the first solar cell 110 is configured so that the first electron electrodes 116 and the first electron current collector 118 are positioned toward a light source
  • the second solar cell 210 is configured so that the second hole electrodes 216 and the second hole current collector 218 are positioned toward the light source. Accordingly, the first electron current collector 118 of the first solar cell 110 and the second hole current collector 218 of the second solar cell 210 are positioned on the same plane (or the same plane level), and the first hole current collector 124 of the first solar cell 110 and the second electron current collector 224 of the second solar cell 210 are positioned on the same plane (or the same plane level).
  • each first solar cell 110 and each second solar cell 210 are arranged so that a longitudinal direction X-X' of the first electron current collector 118 is equal to a longitudinal direction X-X of the second hole current collector 218, and at the same time, a longitudinal direction X-X' of the first hole current collector 124 is equal to a longitudinal direction X-X' of the second electron current collector 224.
  • one end of the first electron current collector 118 is opposite to one end of the second hole current collector 218, and one end of the first hole current collector 124 is opposite to one end of the second electron current collector 224.
  • the interconnector 10 for electrically connecting the first electron current collector 118 of the first solar cell 110 to the second hole current collector 218 of the second solar cell 210 may be straightly positioned on the same plane (or the same plane level).
  • the first electron current collector 118, the second hole current collector 218, and the interconnector 10 are position in a straight line or are collinear.
  • the interconnector 10 may have a textured surface in the same manner as the first and second semiconductor substrates 112 and 212.
  • the textured surface of the interconnector 10 may be a surface opposite a surface of the interconnector 10 contacting the light receiving surfaces of the first and second semiconductor substrates 112 and 212.
  • the interconnector 10 having the above-described configuration can efficiently increase an absorptance of light while preventing a reduction in an adhesive strength between the interconnector 10 and the corresponding current collectors of the solar cells 110 and 210.
  • the lower protective layer 30 underlying the solar cells 110 and 210 has a plurality of openings 32.
  • the openings 32 are positioned at locations corresponding to the first hole current collector 124 and the second electron current collector 224 respectively positioned on the back surfaces of the substrates 112 and 212 of the solar cells 110 and 210. At least a portion of each of the current collectors 124 and 224 is exposed through the openings 32.
  • a width of each of the openings 32 is equal to or less than or greater than a width of each of the current collectors 124 and 224.
  • the plurality of conductive patterns 52 are positioned on the back sheet 50.
  • the conductive patterns 52 are formed of Cu.
  • the conductive patterns 52 may be formed of a conductive material such as Ag.
  • the conductive patterns 52 are formed in the straight form (or parallel) on the back sheet 50, so that the first hole current collector 124 and the second electron current collector 224 of the solar cells 110 and 210 straightly positioned (in a straight line or collinear) on the same plane (or the same plane level) are electrically connected to each other. Hence, the portions of the current collectors 124 and 224 exposed through the openings 32 of the lower protective layer 30 are opposite to the conductive patterns 52. It is preferable that the size, more particularly the width of each opening 32 is greater than a width of each conductive pattern 52. When the width of each opening 32 is greater than a width of each conductive pattern 52, an electrical connection between the conductive patterns 52 and the corresponding current collectors can be well performed even if misalignment between the openings 32 and the conductive patterns 52 occurs.
  • the conductive patterns 52 are parallel, but immediately adjacent conductive patterns 52 are not aligned with each other. That is, ends of the adjacent conductive patterns 52 that are side-by-side are not aligned, but instead, are offset from each other. Additionally, in an embodiment of the invention, the plurality of openings 32 of the lower protective layer 30 are arranged in a corresponding manner as the plurality of conductive patterns 52.
  • Conductive adhesives 60 are respectively positioned on the conductive patterns 52 and contact the exposed portions of the corresponding current collectors 124 and 224 through the openings 32 of the lower protective layer 30. Hence, the conductive patterns 52 on the back sheet 50 are electrically connected to the first hole current collector 124 of each first solar cell 110, and at the same time, are electrically connected to the second electron current collector 224 of each second solar cell 210.
  • an insulating sheet formed of an insulating material may be further positioned between the lower protective layer 30 and the back sheet 50.
  • the first electron current collector 118 of the first solar cell 110 and the second hole current collector 218 of the second solar cell 210 are positioned on the same plane (or the same plane level), and the first hole current collector 124 of the first solar cell 110 and the second electron current collector 224 of the second solar cell 210 are positioned on the same plane (or the same plane level). Accordingly, the first electron current collector 118 and the second hole current collector 218 positioned on the light receiving surface of the solar cells 110 and 210 can be electrically connected to each other using the interconnector 10. The first hole current collector 124 and the second electron current collector 224 can be electrically connected to each other using the conductive patterns 52 and the interconnector 10.
  • the yield in the module process of the solar cells can be improved and a distance between the solar cells 110 and 210 can be reduced to be equal to or less than about 1 mm.
  • a bypass diode 54 may be locally and directly formed in the back sheet 50.
  • a bypass forming method using the bypass diode 54 is not limited to a method illustrated in FIG. 6, and other methods may be used. Further, the number of bypasses is not limited.
  • bypass diode 54 when the bypass diode 54 is directly formed in the back sheet 50, power reduction resulting from the local shadowing can be efficiently prevented or reduced.
  • first solar cells 110 and the second solar cells 210 are alternately arranged in the embodiment of the invention described above by way of example, other arrangements may be used.
  • first groups each including the two or three first solar cells 110 and second groups each including the two or three second solar cells 210 may be alternately arranged.
  • FIG. 7 is a perspective view of a solar cell module according to another embodiment of the invention.
  • FIG. 8 is a perspective view illustrating a schematic configuration of a first solar cell according to another embodiment of the invention.
  • FIG. 9 is a perspective view illustrating a schematic configuration of a second solar cell according to another embodiment of the invention.
  • FIG. 10 is a plane view of a back sheet according to another embodiment of the invention.
  • a solar cell module includes a plurality of solar cells 310 and 410, a plurality of conductive patterns 52a and 52b for electrically connecting the plurality of solar cells 310 and 410 to one another, upper and lower protective layers 20 and 30 for protecting the solar cells 310 and 410, a transparent member 40 on the upper protective layer 20 that is positioned near to light receiving surfaces of the solar cells 310 and 410, a back sheet 50 underlying the lower protective layer 30 that is positioned near to surfaces opposite the light receiving surfaces of the solar cells 310 and 410, and a frame receiving the components 310, 410, 52a, 52b, 30, 40, and 50 that form an integral body through a lamination process.
  • the plurality of solar cells 310 and 410 disposed between the upper protective layer 20 and the lower protective layer 30 include at least one first solar cell 310 and at least one second solar cell 410.
  • the first solar cell 310 includes a first semiconductor substrate 312 of a first conductive type (for example, a p-type) having a plurality of via holes H, an emitter layer 314 positioned in an entire surface of the first semiconductor substrate 312, a plurality of first electron electrodes 316 positioned on the emitter layer 314 of a front surface corresponding to a light receiving surface of the first semiconductor substrate 312, a plurality of first electron current collectors 318 that are positioned on the emitter layer 314 of a back surface opposite the front surface of the first semiconductor substrate 312 in and around the via holes H and are electrically connected to the plurality of first electron electrodes 316, an anti-reflection layer 320 positioned on the emitter layer 314 of the front surface of the first semiconductor substrate 312 on which the first electron electrodes 316 are not positioned, a plurality of first hole electrodes 322 positioned on the back surface of the first semiconductor substrate 312, a plurality of first hole current collectors 324 that are positioned on the
  • the emitter layer 314 may contain second conductive type impurities (for example, n-type impurities).
  • the first electron electrodes 316 are electrically and physically connected to the emitter layer 314.
  • the first electron electrodes 316 collect carriers (e.g., electrons) moving to the emitter layer 314 and transfer the carriers to the first electron current collectors 318 electrically connected to the first electron electrodes 316 through the via holes H.
  • the first electron current collectors 318 on the back surface of the first semiconductor substrate 312 extend substantially parallel to one another in a direction crossing the first electron electrodes 316 positioned on the front surface of the first semiconductor substrate 312.
  • the via holes H in the first semiconductor substrate 312 are formed at crossings of the first electron electrodes 316 and the first electron current collectors 318. At least one of each first electron electrode 316 and each first electron current collector 318 extends to at least one of the front surface and the back surface of the first semiconductor substrate 312 through the via holes H. Thus, the first electron electrodes 316 and the first electron current collectors 318 respectively positioned on opposite surfaces of the first semiconductor substrate 312 are electrically connected to one another.
  • the first electron current collectors 318 output the carriers (e.g., electrons) transferred from the first electron electrodes 316 to an external device.
  • the first hole electrodes 322 on the back surface of the first semiconductor substrate 312 are positioned to be spaced apart from the first electron current collectors 318 adjacent to the first hole electrodes 322.
  • the first hole electrodes 322 are positioned on almost the entire back surface of the first semiconductor substrate 312 excluding a formation area of the first electron current collectors 318 from the back surface of the first semiconductor substrate 312.
  • the first hole electrodes 322 collect carriers (e.g., holes) moving to the first semiconductor substrate 312.
  • the emitter layer 314 in the back surface of the first semiconductor substrate 312 has a plurality of exposing portions 328 that expose a portion of the back surface of the first semiconductor substrate 312 and surround the first electron current collectors 318.
  • the first hole current collectors 324 are positioned on the back surface of the first semiconductor substrate 312 and are electrically and physically connected to the first hole electrodes 322. Further, the first hole current collectors 324 extend substantially parallel to the first electron current collectors 318. Thus, the first hole current collectors 324 collect carriers (e.g., holes) transferred from the first hole electrodes 322 and output the carriers to the external device.
  • carriers e.g., holes
  • Each of the back surface field layers 326 between the first hole electrodes 322 and the first semiconductor substrate 312 is a region (e.g., a p + -type region) that is more heavily doped with impurities of the same conductive type as the first semiconductor substrate 312 than the first semiconductor substrate 312.
  • Configuration of a second solar cell 410 is substantially the same as the first solar cell 310, except that conductive types of the corresponding components of the first and second solar cells 310 and 410 are opposite to each other.
  • the configuration of the second solar cell 410 may be briefly described with reference to FIG. 9.
  • a second semiconductor substrate 412 of the second solar cell 410 is of a second conductive type (for example, an n-type) and has a plurality of via holes H.
  • the emitter layer 414 is of a first conductive type (e.g., a p-type).
  • the emitter layer 414 may be formed by doping the second semiconductor substrate 412 with impurities of a group III element such as boron (B), gallium (Ga), and indium (In).
  • An anti-reflection layer 420 and a plurality of second hole electrodes 416 are positioned on the emitter layer 414.
  • a plurality of second hole current collectors 418 electrically connected to the second hole electrodes 416 through the via holes H, a plurality of second electron electrodes 422, and a plurality of second electron current collectors 424 electrically connected to the second electron electrodes 422 are positioned on a surface (i.e., a back surface) opposite a light receiving surface of the second semiconductor substrate 412.
  • the second solar cell 410 may have a textured surface of the second semiconductor substrate 412 in the same manner as the first solar cell 310.
  • the second solar cell 410 further includes a plurality of back surface field layer 426 and a plurality of expositing portions 428.
  • At least one first solar cell 310 and at least one second solar cell 410 are arranged adjacently to each other in a matrix structure in the same manner as the solar cells 110 and 210.
  • the first solar cells 310 and the second solar cells 410 may be alternately arranged.
  • the first solar cell 310 is configured so that the first electron electrodes 316 are positioned toward a light source
  • the second solar cell 410 is configured so that the second hole electrodes 416 are positioned toward the light source. Accordingly, the first electron current collectors 318, the first hole electrodes 322, and the first hole current collectors 324 of the first solar cell 310 and the second hole current collectors 418, the second electron electrodes 422, and the second electron current collectors 424 of the second solar cell 410 are positioned on the same plane (or the same plane level).
  • the first solar cells 310 and the second solar cells 410 are arranged in the matrix structure, the first solar cells 310 and the second solar cells 410 are arranged so that a longitudinal direction of the first electron current collectors 318 is equal to a longitudinal direction of the second hole current collectors 418, and at the same time, a longitudinal direction of the first hole current collectors 324 is equal to a longitudinal direction of the second electron current collectors 424.
  • a longitudinal direction of the first electron current collectors 318 is opposite to one end of each second hole current collector 418
  • one end of each first hole current collector 324 is opposite to one end of each second electron current collector 424.
  • the conductive patterns 52a for electrically connecting the first electron current collectors 318 to the second hole current collectors 418 and the conductive patterns 52b for electrically connecting the first hole current collectors 324 to the second electron current collectors 424 are formed on the back sheet 50.
  • a plurality of openings 32 are formed in the lower protective layer 30 at locations corresponding to the conductive patterns 52a and 52b. At least a portion of the corresponding current collector is exposed through each of the openings 32. It is preferable that a width of each of the openings 32 is greater than a width of each of the conductive patterns 52a and 52b. As above, when the width of each of the openings 32 is greater than the width of each of the conductive patterns 52a and 52b, an electrical connection between the conductive patterns 52a and 52b and the corresponding current collectors can be well performed even if misalignment between the openings 32 and the conductive patterns 52a and 52b occurs. Further, the electrical connection between the conductive patterns 52a and 52b and the corresponding current collectors may be performed using a conductive adhesive in the same manner as the above-described embodiment.
  • the first electron current collectors 318 of the first solar cell 310 and the second hole current collectors 418 of the second solar cell 410 are straightly connected to one another in the same plane (or the same plane level) using the conductive patterns 52a and the conductive adhesive filled in the openings 32. Further, the first hole current collectors 324 of the first solar cell 310 and the second electron current collectors 424 of the second solar cell 410 are straightly connected to one another in the same plane (or the same plane level) using the conductive patterns 52b and the conductive adhesive filled in the openings 32.
  • the electrical connection between the solar cells 310 and 410 using the conductive patterns 52a and 52b may be easily performed.
  • first electron current collector 318, the second hole current collector 418, and the conductive pattern 52a are position in a straight line or are collinear.
  • first hole current collectors 324, the second electron current collectors 424, and the conductive patterns 52b are position in a straight line or are collinear. Accordingly, a yield in a module process of the solar cells 310 and 410 can be improved, and a distance between the solar cells 310 and 410 can be reduced to be equal to or less than about 1 mm.
  • a first plurality of conductive patterns 52a and a second plurality of conductive patterns 52b are parallel, but immediately adjacent conductive patterns 52a and conductive patterns 52b are not aligned or misaligned with each other. That is, ends of the adjacent conductive patterns 52a and 52b that are side-by-side are not aligned, but instead, are offset from each other.
  • the plurality of openings 32 of the lower protective layer 30 are arranged in a corresponding manner as the plurality of conductive patterns 52a and 52b. Nevertheless, the first plurality of the conductive patterns 52a are aligned with each other, and the second plurality of the conductive patterns 52b are aligned with each other. In the embodiment shown, the first plurality of the conductive patterns 52a respectively alternate with the second plurality of the conductive patterns 52b.
  • bypass diode may be formed in the embodiment of the invention.

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur un module de piles solaires, qui comprend au moins une première pile solaire, au moins une seconde pile solaire, une couche protectrice supérieure positionnée sur la première pile solaire et la seconde pile solaire, un élément transparent positionné sur la couche protectrice supérieure, une couche protectrice inférieure positionnée sous la première pile solaire et la seconde pile solaire, et une feuille arrière positionnée sous la couche protectrice inférieure. La feuille arrière comporte au moins un motif conducteur pour connecter électriquement un collecteur de courant positionné sur une surface arrière d'un premier substrat semi-conducteur de la première pile solaire à un collecteur de courant positionné sur une surface arrière d'un second substrat semi-conducteur de la seconde pile solaire, et le ou les motifs conducteurs sont formés en ligne droite pour assurer une connexion entre ceux-ci.
PCT/KR2010/004800 2009-12-09 2010-07-22 Module de piles solaires Ceased WO2011071227A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0121791 2009-12-09
KR1020090121791A KR101627377B1 (ko) 2009-12-09 2009-12-09 태양 전지 모듈

Publications (1)

Publication Number Publication Date
WO2011071227A1 true WO2011071227A1 (fr) 2011-06-16

Family

ID=44080812

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004800 Ceased WO2011071227A1 (fr) 2009-12-09 2010-07-22 Module de piles solaires

Country Status (3)

Country Link
US (1) US20110132426A1 (fr)
KR (1) KR101627377B1 (fr)
WO (1) WO2011071227A1 (fr)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US20120285501A1 (en) * 2010-12-29 2012-11-15 E.I. Du Pont De Nemours And Company Integrated back-sheet for back contact photovoltaic module
WO2012096998A2 (fr) * 2011-01-10 2012-07-19 NuvoSun, Inc. Modules photovoltaïques et systèmes de montage
US20130104958A1 (en) * 2011-10-31 2013-05-02 E I Du Pont De Nemours And Company Integrated back-sheet for back contact photovoltaic module
KR101860919B1 (ko) 2011-12-16 2018-06-29 엘지전자 주식회사 태양 전지 및 이의 제조 방법
KR20130096822A (ko) * 2012-02-23 2013-09-02 엘지전자 주식회사 태양 전지 및 그 제조 방법
CN103797582B (zh) * 2012-02-29 2018-04-27 大日本印刷株式会社 太阳能电池用集电片以及使用其的太阳能电池模块
KR101349847B1 (ko) * 2012-06-13 2014-01-27 희성전자 주식회사 바이패스 다이오드 일체형 태양전지 패키지
CN104904021A (zh) * 2012-11-05 2015-09-09 索莱克赛尔公司 用于单片岛型太阳能光伏电池和模块的系统和方法
FI124969B (fi) * 2013-03-05 2015-04-15 Cencorp Oyj Aurinkokennomoduulin kokoonpano
US9960303B2 (en) 2013-03-15 2018-05-01 Morgan Solar Inc. Sunlight concentrating and harvesting device
US9714756B2 (en) 2013-03-15 2017-07-25 Morgan Solar Inc. Illumination device
US9464782B2 (en) 2013-03-15 2016-10-11 Morgan Solar Inc. Light panel, optical assembly with improved interface and light panel with improved manufacturing tolerances
KR20160076393A (ko) * 2014-12-22 2016-06-30 엘지전자 주식회사 태양 전지 모듈
US10770610B2 (en) 2015-12-08 2020-09-08 Sunpower Corporation Photovoltaic module interconnect joints
US10090420B2 (en) 2016-01-22 2018-10-02 Solar Junction Corporation Via etch method for back contact multijunction solar cells
US9680035B1 (en) * 2016-05-27 2017-06-13 Solar Junction Corporation Surface mount solar cell with integrated coverglass
US11502213B2 (en) 2016-12-30 2022-11-15 Sunpower Corporation Solar cell having a plurality of sub-cells coupled by cell level interconnection
US10672919B2 (en) 2017-09-19 2020-06-02 Tesla, Inc. Moisture-resistant solar cells for solar roof tiles
US11190128B2 (en) 2018-02-27 2021-11-30 Tesla, Inc. Parallel-connected solar roof tile modules
CN109904283B (zh) * 2019-03-15 2021-08-03 武汉美格科技股份有限公司 一种太阳能电池的互联制造法及其制造的太阳能电池组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070119684A (ko) * 2005-03-22 2007-12-20 어플라이드 머티어리얼스, 인코포레이티드 배선이 개선된 솔라 패널 제조 및 확장형 광전지
KR20080075156A (ko) * 2005-11-07 2008-08-14 어플라이드 머티어리얼스, 인코포레이티드 광전지 콘택 및 배선 형성 방법
JP2009164320A (ja) * 2008-01-04 2009-07-23 Sharp Corp 太陽電池および太陽電池モジュール

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0440869A1 (fr) * 1990-02-09 1991-08-14 Bio-Photonics, Inc. Elément photovoltaique destiné à transformer la radiation solaire en électricité et batterie photo-électrique
US5616185A (en) * 1995-10-10 1997-04-01 Hughes Aircraft Company Solar cell with integrated bypass diode and method
JP2002217434A (ja) * 2001-01-19 2002-08-02 Sharp Corp 太陽電池、太陽電池用インターコネクターおよびストリング
US7649141B2 (en) * 2003-06-30 2010-01-19 Advent Solar, Inc. Emitter wrap-through back contact solar cells on thin silicon wafers
US20050139252A1 (en) * 2003-12-29 2005-06-30 Youngtack Shim Photovoltaic systems and methods
US7498508B2 (en) * 2006-02-24 2009-03-03 Day4 Energy, Inc. High voltage solar cell and solar cell module
JP5142980B2 (ja) * 2006-03-01 2013-02-13 三洋電機株式会社 太陽電池セル、及び、この太陽電池セルを用いた太陽電池モジュール
EP2100336A4 (fr) * 2006-12-22 2013-04-10 Applied Materials Inc Technologies d'interconnexion pour cellules et modules solaires a contact arriere
JP4989549B2 (ja) * 2007-08-24 2012-08-01 三洋電機株式会社 太陽電池及び太陽電池モジュール
JP5201659B2 (ja) 2007-12-26 2013-06-05 シャープ株式会社 太陽電池セル用バイパスダイオードの製造方法
JP2009158858A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及びその製造方法
KR100953618B1 (ko) * 2008-01-11 2010-04-20 삼성에스디아이 주식회사 태양 전지
WO2009134939A2 (fr) * 2008-04-29 2009-11-05 Advent Solar, Inc. Modules photovoltaïques fabriqués en utilisant des techniques d'assemblage de module monolithe

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070119684A (ko) * 2005-03-22 2007-12-20 어플라이드 머티어리얼스, 인코포레이티드 배선이 개선된 솔라 패널 제조 및 확장형 광전지
KR20080075156A (ko) * 2005-11-07 2008-08-14 어플라이드 머티어리얼스, 인코포레이티드 광전지 콘택 및 배선 형성 방법
JP2009164320A (ja) * 2008-01-04 2009-07-23 Sharp Corp 太陽電池および太陽電池モジュール

Also Published As

Publication number Publication date
KR101627377B1 (ko) 2016-06-03
US20110132426A1 (en) 2011-06-09
KR20110064980A (ko) 2011-06-15

Similar Documents

Publication Publication Date Title
WO2011071227A1 (fr) Module de piles solaires
WO2011043517A1 (fr) Cellule solaire et module comprenant des cellules solaires
WO2011004950A1 (fr) Module de cellules solaires à interconnecteur et son procédé de fabrication
WO2010101350A2 (fr) Cellule solaire et son procédé de fabrication
WO2011037373A2 (fr) Module photovoltaïque et son procédé de fabrication
WO2010140740A1 (fr) Cellule solaire et son procédé de fabrication
WO2011030978A1 (fr) Cellule solaire
WO2010071341A2 (fr) Cellule solaire et procédé pour la fabriquer
WO2012043921A1 (fr) Dispositifs semi-conducteurs et leurs procédés de fabrication
WO2010021477A2 (fr) Module de piles solaires et son procédé de fabrication
WO2010147260A1 (fr) Pile solaire et procédé de fabrication associé
WO2020130318A1 (fr) Cellule solaire tandem
WO2010013956A2 (fr) Cellule solaire, procédé de fabrication associé et module de cellule solaire
WO2010131816A1 (fr) Pile solaire
WO2016186317A1 (fr) Module de cellules solaires de type pérovskite
WO2011002230A2 (fr) Batterie solaire et son procédé de production
WO2012020887A1 (fr) Panneau à cellules solaires
WO2015056934A1 (fr) Module de cellule solaire
WO2017043805A1 (fr) Cellule solaire du type à film mince et procédé de fabrication de celle-ci
WO2011052875A2 (fr) Pile solaire, procédé pour sa fabrication et module de piles solaires
WO2012015108A1 (fr) Panneau de cellules solaires
WO2011129503A1 (fr) Cellule solaire et procédé de fabrication associé
WO2012023663A1 (fr) Panneau solaire
WO2012093845A2 (fr) Photopiles et leur procédé de fabrication
KR20140095658A (ko) 태양 전지

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10836124

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10836124

Country of ref document: EP

Kind code of ref document: A1