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WO2011068101A1 - Filament supporting method, electron gun, and processing apparatus - Google Patents

Filament supporting method, electron gun, and processing apparatus Download PDF

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Publication number
WO2011068101A1
WO2011068101A1 PCT/JP2010/071386 JP2010071386W WO2011068101A1 WO 2011068101 A1 WO2011068101 A1 WO 2011068101A1 JP 2010071386 W JP2010071386 W JP 2010071386W WO 2011068101 A1 WO2011068101 A1 WO 2011068101A1
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WIPO (PCT)
Prior art keywords
filament
electron gun
support
cathode electrode
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/071386
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French (fr)
Japanese (ja)
Inventor
栄一 飯島
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Ulvac Inc
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Ulvac Inc
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Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP2011544256A priority Critical patent/JPWO2011068101A1/en
Publication of WO2011068101A1 publication Critical patent/WO2011068101A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/075Electron guns using thermionic emission from cathodes heated by particle bombardment or by irradiation, e.g. by laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06Electron sources; Electron guns
    • H01J37/07Eliminating deleterious effects due to thermal effects or electric or magnetic fields

Definitions

  • the present invention relates to a method for supporting a filament of an electron gun used as a heating apparatus such as a melting furnace or a vapor deposition apparatus, an electron gun, and a processing apparatus.
  • an electron gun is used as a heating source for an evaporation apparatus, a melting furnace, a heat treatment furnace, and the like because an energy source is electrons and an electron beam can be easily oscillated and deflected.
  • a piercing electron gun is known as one of electron guns that emit an electron beam (see, for example, Patent Document 1 and Patent Document 2).
  • thermoelectrons are emitted from a filament that has generated heat due to Joule heat of an alternating current.
  • Thermal electrons are emitted from the cathode electrode to which a positive voltage is applied.
  • thermoelectrons emitted from the cathode electrode are focused by an electric field formed by a Wehnelt electrode having the same potential as the cathode electrode and an anode electrode to which a positive voltage is applied to the cathode electrode and the Wehnelt electrode. And emitted as an electron beam.
  • the filament temperature is about 2000K to 3000K. This temperature causes the filament to thermally expand and deform into a convex shape toward the cathode electrode. Since the deformation of the filament changes the distance between the filament and the cathode electrode, the control of the electron beam may become unstable, that is, the electron beam output may become unstable.
  • the present invention has been made to solve the above-described problems, and an object of the present invention is to provide a filament supporting method capable of stabilizing the electron beam output, an electron gun, and a treatment including the electron gun. To provide an apparatus.
  • the first aspect of the present invention is a supporting method for supporting a filament that is energized in order to heat a cathode electrode with thermoelectrons.
  • the method includes supporting a filament by a support member, and includes supporting the filament so that a tip of the support member is displaced according to elongation of the filament generated by energization.
  • the extension of the filament is absorbed by the displacement of the tip of the support member that supports the filament, the amount of displacement of the bent portion of the filament is suppressed. Therefore, fluctuations in the distance between the filament and the cathode electrode can be suppressed. For this reason, the electron beam output is stabilized.
  • an example of the support member is a support
  • the tip of the support may be displaced according to heat during energization of the filament.
  • the tip of the column is displaced according to heat.
  • the second aspect of the present invention is an electron gun.
  • the electron gun includes a cathode electrode, a filament that is energized to heat the cathode electrode with thermoelectrons, two struts that support the filament, a tip to which the filament is attached, and a base Two struts each having a proximal end to be secured.
  • pillar displaces each said front-end
  • each of the support columns may be configured to displace the tip of the support in accordance with heat applied to the filament.
  • the tip of the column is displaced in response to heat during energization of the filament.
  • each of the support columns may be configured to displace the tip of the support along the extension direction of the filament according to the extension of the filament. According to this configuration, since the elongation of the filament is absorbed by the displacement of the tip of the support column, the variation in the distance between the filament and the cathode electrode can be suppressed.
  • each of the support columns may be configured such that the ends of the two support columns are displaced in opposite directions according to the elongation of the filament. Since the filament legs are fixed to the two columns, respectively, the filament elongation occurs in a direction toward the two legs. Therefore, according to this structure, the elongation which generate
  • each of the support columns may be configured to include a plurality of members having different thermal expansion coefficients. According to this configuration, the tip of each column can be easily displaced according to heat by the difference in the linear expansion coefficient, that is, the thermal expansion coefficient, of the plurality of members constituting each column.
  • each of the support columns has a first side portion and a second side portion opposite to the first side portion, and the two support columns are fixed to the base.
  • the second sides of the two struts face each other.
  • each of the support columns is disposed on the first side portion, and is disposed on the second side portion with the first member having the first thermal expansion coefficient, and the first thermal expansion coefficient.
  • a second member having a larger second thermal expansion coefficient According to this configuration, it is possible to easily displace the end of each support column according to heat by the difference between the first and second linear expansion coefficients, that is, the thermal expansion coefficients.
  • each of the support columns includes a fixing portion that fixes the base end to the base, a support portion that extends from the fixing portion, and a tip portion that is formed at the tip of the support portion and to which the filament is attached. May be included.
  • the support part may be constituted by the first member and the second member. According to this configuration, the support portions can be easily displaced according to heat by the difference between the first and second linear expansion coefficients.
  • a third aspect of the present invention is a processing apparatus including the above-described electron gun.
  • the electron gun suppresses fluctuations in the distance between the filament and the cathode electrode, and stabilizes the electron beam output. Accordingly, the processing apparatus can stably perform processing using an electron beam, for example, heating of an object.
  • the present invention it is possible to provide a filament supporting method, an electron gun, and a processing apparatus including the electron gun, which can stabilize the electron beam output.
  • the schematic block diagram of the electron gun of one Embodiment The schematic block diagram of the emitter part provided in the electron gun of FIG.
  • the perspective view which shows an example of the filament of FIG. (A) (b) Explanatory drawing of the emitter part provided in the electron gun of FIG. The graph which shows the relationship between the input electric power to the filament in the electron gun of FIG. 1, and an electron beam output.
  • the graph which shows the relationship between the input electric power to the filament in the electron gun of FIG. 1, and an electron beam output.
  • (A) (b) The wave form diagram which shows the output stability evaluation result of the electron beam in the electron gun of FIG. (A) (b) The graph which shows the lifetime evaluation result of the filament in the electron gun of FIG.
  • the schematic block diagram of another electron gun The perspective view of another filament.
  • the electron gun 10 is attached to the side wall 30 a of the processing apparatus 30.
  • the processing apparatus 30 is a vapor deposition chamber for forming a vapor deposited film of a metal oxide such as MgO (magnesium oxide) on the surface of a substrate such as a glass substrate.
  • the electron gun 10 is, for example, a piercing electron gun, and a flange 11a of the casing 11 is fixed to the side wall 30a.
  • the electron gun 10 generates an electron beam EB, and emits the electron beam EB from the opening of the housing 11 toward the process chamber of the processing apparatus 30.
  • the electron beam EB is applied to an object (deposition material) 31 disposed in the process chamber.
  • the electron gun 10 includes a filament 12, a cathode electrode 13, an ion collector 14, a Wehnelt electrode 15, an anode electrode 16, a flow register 17, a focusing coil 18, and an oscillating coil 19.
  • the filament 12, the cathode electrode 13, and the ion collector 14 are disposed on the optical axis A extending in the emission direction of the electron beam EB.
  • the cathode electrode 13 is disposed on the emission side, that is, the opening side from the filament 12, and the ion collector 14 is disposed on the reflection exit side (opposite opening side) from the filament 12.
  • the central portion of the filament 12 and the cathode electrode 13 are disposed so as to face each other in the optical axis A direction.
  • the periphery of the cathode electrode 13 centering on the emission direction is surrounded by the Wehnelt electrode 15.
  • an anode electrode 16 having a cylindrical shape is arranged so that the center of the through hole thereof is located on the optical axis A.
  • a cylindrical flow register 17 is arranged on the emission side of the anode electrode 16 so that the axis center thereof is located on the optical axis A.
  • a focusing coil 18 and an oscillating coil 19 are provided on the outer periphery of the flow register 17 in order from a position close to the anode electrode 16.
  • the focusing coil 18 focuses the electron beam EB that has passed through the anode electrode 16 by the magnetic field generated by the focusing coil 18.
  • the oscillating coil 19 oscillates the electron beam EB by the magnetic field generated by it.
  • the filament 12 is connected to a filament power source 21, and an alternating current is supplied from the filament power source 21.
  • the cathode electrode 13 and the Wehnelt electrode 15 are connected to a cathode power source 22, and a DC voltage is applied from the cathode power source 22.
  • the anode electrode 16 is connected to an acceleration power source 23, and a DC voltage is applied from the acceleration power source 23.
  • the DC voltage applied to the cathode electrode 13, the Wehnelt electrode 15 and the anode electrode 16 is set so that the potential of the filament 12 is the lowest and the potential of the anode electrode 16 is the highest.
  • thermoelectrons are received by the cathode electrode 13 maintained at a positive potential with respect to the filament 12 by the cathode power source 22.
  • the cathode electrode 13 is heated by the radiant heat of the filament 12.
  • the cathode electrode 13 is heated by these thermoelectrons and radiant heat, and this also emits thermoelectrons.
  • thermoelectrons emitted by the cathode electrode 13 are a Wehnelt electrode 15 having the same potential as the cathode electrode 13 and an anode electrode 16 maintained at a positive potential with respect to the cathode electrode 13 and the Wehnelt electrode 15.
  • the aircraft flies along the optical axis A while being accelerated by the potential difference therebetween.
  • the thermoelectrons that have passed through the through hole of the anode electrode 16 and the flow register 17 connected to the anode electrode 16 are emitted as an electron beam EB from the opening of the housing 11 into the processing apparatus 30.
  • thermoelectrons emitted from the cathode electrode 13 collide with the gas remaining in the casing 11 and the processing apparatus 30, the residual gas is cationized, and the cation becomes It is accelerated by the voltage of the cathode electrode 13 and the anode electrode 16.
  • a hole (dent) is formed in the cathode electrode 13 due to this collision. Therefore, if such cations are released over a long period of time, a through hole is formed in the cathode electrode 13.
  • the ion collector 14 is disposed at a position opposite to the irradiation direction with respect to the cathode electrode 13, that is, at a position opposite to the anode electrode 16 with respect to the cathode electrode 13.
  • the ion collector 14 absorbs positive ions passing through the through holes formed in the cathode electrode 13, that is, an ion beam, thereby suppressing damage to the electron gun 10 due to the ion beam.
  • the emitter section 40 is an electron beam generating section and includes the filament 12, the cathode electrode 13, the Wehnelt electrode 15, the anode electrode 16, and the ion collector 14, as shown in FIG.
  • An example of the filament 12 is shown in FIG.
  • the filament 12 is made of a refractory metal such as tungsten or a tungsten alloy.
  • the filament 12 is a wire having a rectangular cross section having an outer peripheral surface constituted by four surfaces.
  • the filament 12 has an uneven curved bent portion 12a composed of three continuous bent 12c on a virtual plane Pi including one surface (cathode facing surface) constituting the outer peripheral surface thereof.
  • a pair of straight legs 12b extending in the normal direction of the cathode-facing surface is bent at both ends of the bent portion 12a in the direction in which the three bent portions 12c are continuous. That is, the filament 12, which is a wire having a rectangular cross section, is configured so that any of the bendings included in the filament 12 do not have a twist in the circumferential direction by forming along one of the outer peripheral surfaces. .
  • the filament 12 is produced by, for example, electric discharge machining. An outline of this processing method will be described. First, for example, a tungsten metal plate is prepared. The thickness of this metal plate is, for example, 0.5 mm, and this thickness corresponds to the width of the filament 12 in the optical axis A direction (see FIG. 1). A wire rod for forming the filament 12 is cut out from the metal plate by a known wire electric discharge machining apparatus. This wire has a bent portion 12a at the center in the longitudinal direction. And the filament 12 is obtained by bending the both ends of the longitudinal direction of a wire, and forming the leg part 12b.
  • the filament 12 is attached to filament struts 42 and 43 as support members fixed to the base 41.
  • the emitter section 40 includes a base 41, and the base 41 is fixed to an emitter case (both not shown) by bolts or the like.
  • Two filament struts 42 and 43 are attached to the base 41.
  • two filament struts 42 and 43 are inserted through two through holes formed in the base 41 via insulators 44 and 45, and are fixed by nuts 46 and 47.
  • the filament struts 42 and 43 each have a distal end that supports the filament 12 and a proximal end that is fixed to the base 41.
  • insertion portions for inserting the leg portions 12b of the filaments 12 are formed at the tips of the filament struts 42 and 43, respectively.
  • the filament 12 is fixed to the filament struts 42 and 43 by, for example, set screws (set screws) 48 and 49 by inserting the leg portions 12b of the filament 12 inserted into the insertion portions of the filament struts 42 and 43, respectively. It is attached to the columns 42 and 43.
  • Filament wires 50 and 51 are connected to the filament posts 42 and 43, respectively, and an alternating current is supplied to the filament 12 through the wires 50 and 51 and the filament posts 42 and 43.
  • the cathode electrode 13 is attached to the emitter case (not shown) to which the base 41 is attached, and is disposed so as to face the filament 12.
  • a Wehnelt electrode 15 attached to the emitter case is disposed in front of the cathode electrode 13 (in the electron beam emission direction and rightward in FIG. 2).
  • An insulator (for example, insulator) 52 is attached to the base 41 at a position between the filament columns 42 and 43, and the ion collector 14 is attached to the tip of the insulator. As described above, the ion collector 14 is disposed on the side opposite to the cathode electrode 13 with respect to the filament 12. The ion collector 14 is connected to one of the filament struts 42 and 43 by wiring not shown.
  • the filament struts 42 and 43 at least partially include a portion made of a plurality of members having different materials. That is, this part may be a part of each filament support 42 or 43 or the entire filament support 42 or 43.
  • the location from the position fixed to the base 41 to the tip of each filament support 42, 43 may be constituted by a plurality of members having different materials.
  • the filament post 42 has a fixing portion 42a for fixing the base end to the base 41, a support portion 42b extending from the fixing portion 42a, and the tip of the support portion 42b (that is, the tip of the filament post 42). ) And a tip end portion 42c to which the filament 12 is attached.
  • pillar 42 is comprised from the several member which has a different material.
  • the filament strut 43 has a fixing portion 43a for fixing its base end to the base 41, a support portion 43b extending from the fixing portion 43a, and a tip of the support portion 43b (that is, the tip of the filament strut 43). And a tip 43c to which the filament 12 is attached.
  • pillar 43 is comprised from the several member which has a different material.
  • the filament struts 42 and 43 have the same configuration.
  • Both filament struts 42 and 43 are configured to absorb expansion and contraction generated in the filament 12 when the electron beam EB is emitted, that is, when the filament 12 is energized.
  • the filament 12 generates heat when energized.
  • the material of the filament 12 is tungsten or a tungsten alloy, it extends according to the temperature rise by heat_generation
  • the filament struts 42 and 43 are configured so that their respective tips are displaced corresponding to the elongation of the filament 12, that is, the distance between the tips of the two filament struts 42 and 43 increases as the temperature rises. ing.
  • each of the support portions 42b and 43b includes two types of members, that is, a first member B1 and a second member B2.
  • the first member B1 and the second member B2 are formed of materials having different linear expansion coefficients, that is, thermal expansion coefficients.
  • the first member B1 is molybdenum (Mo)
  • the second member B2 is tantalum (Ta).
  • the combination of the members B1 and B2 is not limited to molybdenum and tantalum.
  • each of the filament struts 42 and 43 has a first side and a second side opposite to the first side, and the filament struts 42 and 43 are fixed to the base 41. In the state, those second side portions face each other.
  • the 1st member B1 which has a 1st linear expansion coefficient is arrange
  • a second linear expansion coefficient larger than the first linear expansion coefficient is applied to the second side portions of the filament struts 42 and 43 (in this example, the second side portions of the support portions 42b and 43b).
  • the 2nd member B2 which has is arrange
  • the filament 12 extends as the temperature rises. If the two filament struts 42 and 43 are not deformed, as shown in FIG. 4B, the position of the leg 12b does not change. In b), it is deformed convexly upward. That is, the distance Lsb indicated by the arrow in FIG. In addition, the position of the filament 12 at room temperature is indicated by a one-dot chain line. Due to this deformation, stress is applied to the bent portion 12a of the filament 12 during heating. When the driving of the electron gun is stopped, the temperature of the filament 12 decreases, so that the filament 12 attempts to return to the original state (position of the one-dot chain line). In other words, the bending stress is repeatedly applied to the filament 12 as the electron gun is driven / stopped. This stress causes the filament 12 to break.
  • the distance between their tips increases as the temperature rises. If the spread is substantially equal to the elongation of the filament 12, the position of the bent portion 12a is substantially equal to the normal position where no temperature is applied. That is, the distance Lsa indicated by the arrow in FIG. Even if the distance between the tips is less than the extension of the filament 12, the amount of movement of the bent portion 12a, that is, the deformation (curvature) of the filament 12 is smaller than when the tip is not displaced.
  • the filament struts 42, 43 are all shown as the first member B1 and the second member B2 from the proximal end to the distal end.
  • a cathode electrode 13 (see FIG. 2) is disposed above the filament 12.
  • FIG. 4A when the tips of the filament struts 42 and 43 spread, the change in the position of the bent portion 12a of the filament 12 is suppressed, so the distance Lsa between the filament 12 and the cathode electrode 13 is as shown in FIG. Compared to the case shown in (b). That is, the fluctuation of the distance Lsa between the filament 12 and the cathode electrode 13 accompanying the temperature rise is suppressed.
  • Example 2 A tungsten plate having a thickness of 0.5 mm was used as a metal plate, and the filament 12 was obtained using a wire electric discharge machining apparatus for the tungsten plate.
  • the length of the filament 12 (the distance between the centers of both legs 12b) is 35 mm at room temperature, and 35.5 mm at the time of output of the electron beam EB (filament temperature is 2800 k).
  • Each of the support portions 42b and 43b of the filament struts 42 and 43 is constituted by the first member B1 and the second member B2, and the first member B1 is made of molybdenum and the second member B2 is made of tantalum.
  • the length L (the direction along the optical axis A in FIG. 2A) of the first and second members B1 and B2 is 11.5 mm, and the thickness (the direction orthogonal to the optical axis A) is 3.5 mm.
  • the displacement amount (direction perpendicular to the optical axis A) of the tips of the filament struts 42 and 43 is 0.2 to 0.25 mm.
  • pillar 42 and 43 has the mutually equal displacement amount of each front-end
  • filament control and cathode control are known as a method for controlling the output of the electron beam EB emitted from the electron gun 10.
  • the filament control is a method of controlling the output of the electron beam EB by changing the voltage applied between the filament 12 and the cathode electrode 13 by controlling the electric power supplied to the filament 12 while keeping the cathode voltage constant. is there.
  • the cathode control is a method of controlling the cathode voltage while keeping the electric power supplied to the filament 12 constant.
  • FIG. 5 is a diagram showing the relationship between the input power to the filament 12 and the output of the electron beam EB for each FC distance (distance between the filament 12 and the cathode electrode 13) under the following irradiation conditions.
  • the results obtained when the FC distance is 2.6 mm are indicated by black circles, while the results obtained when the FC distance is 4.2 mm are indicated by black squares.
  • FC distance 2.6mm
  • FC distance 2.6mm
  • 4.2mm It can be seen that the input power to the filament 12 when the output of the electron beam EB is 17 kV can be reduced by about 10% when the FC distance is set to 2.6 mm, compared with the case where it is set to 4.2 mm. This is considered to be because thermal electrons emitted from the filament 12 are more easily drawn into the cathode electrode 13 when the FC distance is shorter.
  • FIG. 6 is a diagram showing the relationship between the input power to the filament 12 and the output of the electron beam for each cathode voltage under the following irradiation conditions.
  • the results obtained when the cathode voltage is 1.0 kV are indicated by black diamonds
  • the results obtained when the cathode voltage is 1.2 kV are indicated by black circles
  • the cathode voltage is 1.4 kV.
  • the results obtained at times are indicated by black triangles.
  • FC distance 2.6mm
  • the input power to the filament 12 when the output of the electron beam EB is 17 kV decreases as the cathode voltage increases.
  • thermoelectrons emitted from the filament 12 are easily drawn into the cathode electrode 13 as the cathode voltage is higher.
  • the controllability of the output of the electron beam EB is improved as the cathode voltage is lower (that is, the lower the cathode voltage, the lower the slope of the graph in FIG. 6). Is).
  • FIG. 7 is a diagram showing the relationship between the voltage applied to the cathode electrode 13 and the output of the electron beam EB for each FC distance under the following irradiation conditions.
  • the voltage applied to the cathode electrode 13 is the product of the cathode voltage and the current flowing between the filament 12 and the cathode electrode 13.
  • the results obtained when the FC distance is 2.6 mm are indicated by black circles, while the results obtained when the FC distance is 4.2 mm are indicated by black squares. .
  • the output stability of the electron gun 10 equipped with the emitter section 40 of the present embodiment and the conventional emitter section that is, the electron gun equipped with the emitter section in which the filament column does not deform corresponding to the elongation of the filament, are measured. did.
  • the rated output of the electron gun and the electron gun power source is 30 kW (acceleration voltage 20 kV ⁇ 1.5 A).
  • the measurement time is about 30 hours.
  • FIG. 8A shows the measurement result of the electron gun 10 of the present embodiment
  • FIG. 8B shows the measurement result of the electron gun of the conventional configuration
  • the FC distance is set to 4.2 mm in order to prevent contact with the cathode electrode due to deformation (elongation) of the filament.
  • the beam current value fluctuated by +3 mA / ⁇ 2 mA with respect to the beam current value of 850 mA.
  • the FC distance is set to 2.6 mm in order to deform the filament 12 so that the filament struts 42 and 43 absorb the elongation of the filament 12.
  • a change in beam current value of +1 mA / ⁇ 1 mA was observed with respect to a beam current value of 850 mA. That is, the electron gun 10 of this embodiment can improve the fluctuation range of the beam current value to 1 / 2.5 compared to the conventional configuration.
  • the cathode voltage can be set low because the distance between the filament 12 and the cathode electrode 13 is shortened, and the controllability of the EB output of the electron beam is improved.
  • the operating time from when the filament is energized until the filament breaks is measured as the filament life (filament life) did.
  • the output of the electron beam EB emitted from each electron gun is 17 kW.
  • the measurement result with the electron gun 10 of this embodiment is shown in FIG. 9A, and the measurement result with the electron gun of the conventional configuration is shown in FIG. 9B.
  • the average filament lifetime using a conventional electron gun was 663 hours.
  • the average filament life using the electron gun 10 of this embodiment was 875 hours.
  • the electron gun 10 of the present embodiment has an average filament life of about 1.3 times that of the conventional electron gun. This is probably because the stress applied to the filament 12 by the emitter section 40 of the present embodiment can be reduced.
  • the cathode electrode 13 can be raised to a necessary temperature even when the power supplied to the filament 12 is small, and the filament temperature can be suppressed. it is conceivable that.
  • the filament of an electron gun can be obtained by bending a wire.
  • the filament 12 of the present embodiment is less subject to thermal deformation because of less processing distortion. This is because the filament 12 of this embodiment is not subjected to bending, but a wire rod is cut out from one metal plate in a form having a bent portion 12a. Therefore, when an alternating current is supplied to the filament 12, the displacement of the filament 12 in the direction toward the cathode electrode 13 is suppressed more than the filament created by bending the wire. That is, the distance (FC distance) between the filament 12 and the cathode electrode 13 is stabilized. Therefore, in obtaining the output of the electron beam EB, the heating condition of the filament 12 is further relaxed by the amount of stabilization of the FC distance. Therefore, the stability of the output of the electron beam EB emitted from the electron gun 10 can be improved.
  • the electron gun 10 having the above configuration can be used in various processing apparatuses.
  • the processing apparatus is, for example, a melting apparatus, a surface processing apparatus, or a film forming apparatus.
  • the electron gun 10 is used as a heating source for forming a protective film (for example, magnesium oxide: MgO) on the substrate surface.
  • a protective film for example, magnesium oxide: MgO
  • the electron gun 10 is fixed to the side wall of the processing chamber (deposition chamber), and the electron beam EB emitted from the electron gun 10 evaporates magnesium oxide in the hearth as an evaporation source by a deflector or the like. The point is illuminated.
  • This electron beam EB generates an evaporating flow of magnesium oxide, and a magnesium oxide film is formed on the surface of the substrate mounted on the carrier that moves so as to pass through the evaporating flow. Since the electron beam EB emitted from the electron gun 10 is stabilized, an evaporating flow of magnesium oxide is stably generated, so that a uniform film can be formed on the substrate surface.
  • the material of the coating is selected from the group including silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), aluminum (Al), nickel / cobalt alloy (CoNi), and copper (Cu) in addition to magnesium oxide.
  • a vapor deposition material such as at least one metal, metal oxide, or metal compound is used. Similarly, other processing apparatuses can perform stable processing.
  • the electron gun 10 includes a filament 12 that is energized to heat the cathode electrode 13 with thermoelectrons, and filament struts 42 and 43 as support members that support the filament 12.
  • the filament struts 42 and 43 have front end portions 42c and 43c to which the filament 12 is attached, and fixing portions 42a and 43a fixed to the base 41, respectively.
  • the filament struts 42 and 43 displace the tip portions 42c and 43c according to the elongation generated in the filament 12 by energization.
  • the displacement of the bent portion 12a of the filament 12 is suppressed because the extension of the filament 12 is absorbed by the displacement of the tip portions 42c, 43c of the filament columns 42, 43 that support the filament 12. Therefore, fluctuations in the distance between the filament 12 and the cathode electrode 13 are suppressed. As a result, the output of the electron beam EB can be stabilized.
  • the filament struts 42 and 43 displace the tip portions 42 c and 43 c to which the filament 12 is attached along the direction of the filament 12 according to the elongation of the filament 12. Accordingly, since the elongation of the filament 12 is absorbed by the displacement of the tip portions 42c and 43c of the filament columns 42 and 43, it is possible to suppress the variation in the distance between the filament 12 and the cathode electrode 13.
  • the filament struts 42 and 43 displace the respective tip portions 42c and 43c in opposite directions according to the elongation of the filament 12. Since the leg portion 12b of the filament 12 is fixed to the two filament struts 42 and 43, respectively, the elongation of the filament 12 occurs in the direction toward the two ends, that is, the two leg portions 12b. Therefore, the elongation generated in the filament 12 can be easily absorbed by displacing the tip portions 42c, 43c of the filament struts 42, 43 in opposite directions.
  • the filament struts 42 and 43 are configured to include a plurality of members B1 and B2 having different thermal expansion coefficients. Accordingly, the tip portions 42c and 43c can be easily displaced according to heat by the difference between the linear expansion coefficients of the members B1 and B2, that is, the thermal expansion coefficient.
  • the electron gun 10 stabilizes the output of the electron beam EB by suppressing fluctuations in the distance between the filament 12 and the cathode electrode 13. Therefore, the processing apparatus can stably perform processing using the electron beam EB, for example, heating of the object.
  • the said embodiment shows an example and the shape of each member etc. may be changed suitably. Some of the changes are shown below.
  • the support member that supports the filament 12 is formed in the shape of a “column” such as the filament columns 42 and 43.
  • the shape of the “column” may be a columnar shape, a prismatic shape, or other shapes. But you can. That is, the shape of the “support member” is not limited to the filament struts 42 and 43 as shown in FIGS.
  • each of the support portions 42b and 43b is configured by the two members B1 and B2.
  • the tip portions 42c and 43c are also configured by the two members B1 and B2. May be.
  • the members B1 and B2 of the filament struts 42 and 43 are molybdenum (Mo) and tantalum (Ta).
  • Mo molybdenum
  • Ta tantalum
  • the combination of the member B1 and the member B2 is not limited to the above embodiment, and it is sufficient that the elongation of the filament can be absorbed by the difference in the linear expansion coefficient.
  • the member B1 may be tungsten (W) and the member B2 may be molybdenum.
  • the member B1 may be tungsten and the member B2 may be tantalum.
  • the linear expansion coefficient (thermal expansion coefficient) of the first member B1 located outside the filament struts 42 and 43 is located inside the filament struts 42 and 43. What is necessary is just to select so that it may become smaller than that of 2nd member B2.
  • the thicknesses and lengths of the members B1 and B2 may be set so that the tips of the filament struts 42 and 43 are displaced corresponding to the deformation amount of the filament 12 due to thermal expansion.
  • You may change suitably the structure of the electron gun 10 of the said embodiment.
  • the present invention may be embodied in a so-called two-stage focusing electron gun 60 including two focusing coils 61 and 62 and two flow registers 63 and 64.
  • a filament 71 using a wire having a circular cross section may be used.
  • filament control was shown in the said embodiment, you may actualize this invention to the apparatus which controls an output by cathode control.

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Abstract

Disclosed is an electron gun including a filament (12) to which electricity is applied for heating a cathode electrode (13) with thermal electrons, and two filament supports (42, 43) for supporting the filament (12). The filament supports (42, 43) have front ends (42c, 43c) respectively onto which the filament (12) is installed, and base ends to be fixed to a base (41). The filament supports (42, 43) make the front ends (42c, 43c) thereof be displaced respectively, in accordance with elongation that takes place at the filament (12) due to the applying of electricity. Electron beam output can be stabilized with this configuration.

Description

フィラメントの支持方法、電子銃、及び処理装置Filament support method, electron gun, and processing apparatus

 本発明は、溶解炉や蒸着装置等の加熱装置として用いられる電子銃のフィラメントの支持方法、電子銃、及び処理装置に関するものである。 The present invention relates to a method for supporting a filament of an electron gun used as a heating apparatus such as a melting furnace or a vapor deposition apparatus, an electron gun, and a processing apparatus.

 従来、電子銃は、エネルギー源が電子であり容易に電子ビームの揺動、偏向ができるため、蒸着装置、溶解炉、熱処理炉などの加熱源として利用されている。電子ビームを発する電子銃の1つとして、ピアス式電子銃が知られている(例えば、特許文献1,特許文献2参照)。一般に、このピアス式電子銃から電子ビームが放出される際はまず、交流電流のジュール熱によって発熱したフィラメントから熱電子が放出されて、この熱電子とフィラメントからの輻射熱とにより、該フィラメントに対して正の電圧が印加されたカソード電極から熱電子が放出される。そして、このカソード電極から放出された熱電子が、カソード電極と同電位のウェーネルト電極と、これらカソード電極とウェーネルト電極とに対して正の電圧が印加されたアノード電極とが形成する電界によって集束されて、電子ビームとして放出される。 Conventionally, an electron gun is used as a heating source for an evaporation apparatus, a melting furnace, a heat treatment furnace, and the like because an energy source is electrons and an electron beam can be easily oscillated and deflected. A piercing electron gun is known as one of electron guns that emit an electron beam (see, for example, Patent Document 1 and Patent Document 2). In general, when an electron beam is emitted from this pierce-type electron gun, first, thermoelectrons are emitted from a filament that has generated heat due to Joule heat of an alternating current. Thermal electrons are emitted from the cathode electrode to which a positive voltage is applied. The thermoelectrons emitted from the cathode electrode are focused by an electric field formed by a Wehnelt electrode having the same potential as the cathode electrode and an anode electrode to which a positive voltage is applied to the cathode electrode and the Wehnelt electrode. And emitted as an electron beam.

特開平7-258832号公報Japanese Patent Laid-Open No. 7-258832 特開2005-268177号公報JP 2005-268177 A

 カソード電極の加熱源として利用されるフィラメントには、電子ビームが放出される期間において、交流電流が供給され続け、カソード電極が熱電子を放出するに足る程の熱量をカソード電極に供給する。そのため、フィラメントの温度は凡そ2000K~3000Kとなる。この温度により、フィラメントが熱膨張し、カソード電極に向かって凸状に変形する。このフィラメントの変形は、フィラメントとカソード電極との間の距離を変化させるため、電子ビームの制御が不安定になる、つまり電子ビーム出力が不安定になるおそれがあった。 An alternating current is continuously supplied to the filament used as a heating source of the cathode electrode during the period when the electron beam is emitted, and supplies the cathode electrode with an amount of heat sufficient for the cathode electrode to emit thermoelectrons. Therefore, the filament temperature is about 2000K to 3000K. This temperature causes the filament to thermally expand and deform into a convex shape toward the cathode electrode. Since the deformation of the filament changes the distance between the filament and the cathode electrode, the control of the electron beam may become unstable, that is, the electron beam output may become unstable.

 本発明は上記問題点を解決するためになされたものであって、その目的は、電子ビーム出力の安定化を図ることが可能なフィラメントの支持方法、電子銃、及びその電子銃を備えた処理装置を提供することにある。 The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a filament supporting method capable of stabilizing the electron beam output, an electron gun, and a treatment including the electron gun. To provide an apparatus.

 以下、上記課題を解決するための手段について記載する。
 本発明の第1の態様は、カソード電極を熱電子により加熱するために通電されるフィラメントを支持する支持方法である。当該方法は、支持部材によりフィラメントを支持することであって、通電により発生する前記フィラメントの伸びに応じて前記支持部材の先端を変位させるようにフィラメントを支持することを備える。この方法によれば、フィラメントを支持する支持部材の先端が変位することにより、フィラメントの伸びが吸収されるため、フィラメントの屈曲部の変位量が抑制される。従って、フィラメントとカソード電極との間の距離の変動が抑えられる。このため、電子ビーム出力が安定化される。
Hereinafter, means for solving the above problems will be described.
The first aspect of the present invention is a supporting method for supporting a filament that is energized in order to heat a cathode electrode with thermoelectrons. The method includes supporting a filament by a support member, and includes supporting the filament so that a tip of the support member is displaced according to elongation of the filament generated by energization. According to this method, since the extension of the filament is absorbed by the displacement of the tip of the support member that supports the filament, the amount of displacement of the bent portion of the filament is suppressed. Therefore, fluctuations in the distance between the filament and the cathode electrode can be suppressed. For this reason, the electron beam output is stabilized.

 上記方法において、前記支持部材の一例は支柱であり、前記フィラメントに通電により伸びが発生するとき、前記フィラメントに対する通電中の熱に応じて前記支柱の先端が変位するものであってよい。この方法によれば、フィラメントに対する通電中に、熱に応じて支柱の先端が変位する。これにより、熱により発生するフィラメントの伸びに応じて支柱の先端を変位させることが可能となる。 In the above method, an example of the support member is a support, and when the filament is stretched by energization, the tip of the support may be displaced according to heat during energization of the filament. According to this method, during the energization of the filament, the tip of the column is displaced according to heat. Thereby, it becomes possible to displace the front-end | tip of a support | pillar according to the elongation of the filament generate | occur | produced with a heat | fever.

 本発明の第2の態様は、電子銃である。当該電子銃は、カソード電極と、前記カソード電極を熱電子により加熱するために通電されるフィラメントと、前記フィラメントを支持する2つの支柱であって、前記フィラメントが取着される先端と、ベースに固定される基端とを各々有する2つの支柱とを含む。前記各支柱は、通電により前記フィラメントに発生する伸びに応じて、それぞれの前記先端を変位させる。この構成によれば、フィラメントを支持する各支柱の先端が変位することにより、フィラメントの伸びが吸収されるため、フィラメントの屈曲部の変位量が抑制される。従って、フィラメントとカソード電極との間の距離の変動が抑えられる。このため、電子ビーム出力が安定化される。 The second aspect of the present invention is an electron gun. The electron gun includes a cathode electrode, a filament that is energized to heat the cathode electrode with thermoelectrons, two struts that support the filament, a tip to which the filament is attached, and a base Two struts each having a proximal end to be secured. Each said support | pillar displaces each said front-end | tip according to the expansion | extension which generate | occur | produces in the said filament by electricity supply. According to this configuration, the displacement of the bending portion of the filament is suppressed because the extension of the filament is absorbed by the displacement of the tip of each support column supporting the filament. Therefore, fluctuations in the distance between the filament and the cathode electrode can be suppressed. For this reason, the electron beam output is stabilized.

 上記電子銃において、前記各支柱は、前記フィラメントに対する通電中の熱に応じて、それぞれの前記先端を変位させるものであってよい。この構成によれば、フィラメントに対する通電中に、熱に応じて支柱の先端が変位する。これにより、熱により発生するフィラメントの伸びに応じて支柱の先端を変位させることが可能となる。 In the above-described electron gun, each of the support columns may be configured to displace the tip of the support in accordance with heat applied to the filament. According to this configuration, the tip of the column is displaced in response to heat during energization of the filament. Thereby, it becomes possible to displace the front-end | tip of a support | pillar according to the elongation of the filament generate | occur | produced with a heat | fever.

 上記電子銃において、前記各支柱は、前記フィラメントの伸びに応じて、それぞれの前記先端を前記フィラメントの伸びの方向に沿って変位させるものであってよい。この構成によれば、支柱の先端の変位によってフィラメントの伸びが吸収されるため、フィラメントとカソード電極との間の距離の変動が抑えられる。 In the above-described electron gun, each of the support columns may be configured to displace the tip of the support along the extension direction of the filament according to the extension of the filament. According to this configuration, since the elongation of the filament is absorbed by the displacement of the tip of the support column, the variation in the distance between the filament and the cathode electrode can be suppressed.

 上記電子銃において、前記各支柱は、前記フィラメントの伸びに応じて、該2つの支柱の先端が互いに逆方向に変位するように構成されるものであってよい。フィラメントの脚部は2つの支柱にそれぞれ固定されるため、フィラメントの伸びは、2つの脚部へ向かう方向に発生する。従って、この構成によれば、2つの支柱の先端を互いに逆方向に変位させることで、フィラメントに発生する伸びが吸収される。 In the electron gun, each of the support columns may be configured such that the ends of the two support columns are displaced in opposite directions according to the elongation of the filament. Since the filament legs are fixed to the two columns, respectively, the filament elongation occurs in a direction toward the two legs. Therefore, according to this structure, the elongation which generate | occur | produces in a filament is absorbed by displacing the front-end | tip of two support | pillars in a mutually reverse direction.

 上記電子銃においては、前記各支柱は、互いに異なる熱膨張係数を有する複数の部材を含んで構成されるものであってよい。この構成によれば、各支柱を構成する複数の部材の線膨張係数すなわち熱膨張係数の差によって、各支柱の先端を熱に応じて容易に変位させることが可能になる。 In the electron gun, each of the support columns may be configured to include a plurality of members having different thermal expansion coefficients. According to this configuration, the tip of each column can be easily displaced according to heat by the difference in the linear expansion coefficient, that is, the thermal expansion coefficient, of the plurality of members constituting each column.

 上記電子銃において、前記各支柱は、第1の側部と、該第1の側部と反対側の第2の側部とを有し、前記2つの支柱が前記ベースに固定された状態で、該2つの支柱の第2の側部は互いに対向している。この場合において、前記各支柱は、前記第1の側部に配置され、第1の熱膨張係数を有する第1の部材と、前記第2の側部に配置され、前記第1の熱膨張係数よりも大きな第2の熱膨張係数を有する第2の部材とにより構成されるものであってよい。この構成によれば、第1及び第2の線膨張係数すなわち熱膨張係数の差によって、各支柱の先端を熱に応じて容易に変位させることが可能になる。 In the electron gun, each of the support columns has a first side portion and a second side portion opposite to the first side portion, and the two support columns are fixed to the base. The second sides of the two struts face each other. In this case, each of the support columns is disposed on the first side portion, and is disposed on the second side portion with the first member having the first thermal expansion coefficient, and the first thermal expansion coefficient. And a second member having a larger second thermal expansion coefficient. According to this configuration, it is possible to easily displace the end of each support column according to heat by the difference between the first and second linear expansion coefficients, that is, the thermal expansion coefficients.

 上記電子銃において、前記各支柱は、前記基端を前記ベースに固定する固定部と、前記固定部から延びる支持部と、前記支持部の先端に形成されて前記フィラメントが取着される先端部とを含むものであってよい。この場合、前記支持部が前記第1の部材と前記第2の部材とにより構成されるものであってよい。この構成によれば、第1及び第2の線膨張係数の差によって、各支持部を熱に応じて容易に変位させることが可能になる。 In each of the electron guns, each of the support columns includes a fixing portion that fixes the base end to the base, a support portion that extends from the fixing portion, and a tip portion that is formed at the tip of the support portion and to which the filament is attached. May be included. In this case, the support part may be constituted by the first member and the second member. According to this configuration, the support portions can be easily displaced according to heat by the difference between the first and second linear expansion coefficients.

 本発明の第3の態様は、上述した電子銃を備えた処理装置である。このような処理装置では、電子銃は、フィラメントとカソード電極との間の距離の変動を抑え、電子ビーム出力を安定化させる。従って、処理装置において、電子ビームを用いた処理、例えば、対象物の加熱を安定して行うことが可能となる。 A third aspect of the present invention is a processing apparatus including the above-described electron gun. In such a processing apparatus, the electron gun suppresses fluctuations in the distance between the filament and the cathode electrode, and stabilizes the electron beam output. Accordingly, the processing apparatus can stably perform processing using an electron beam, for example, heating of an object.

 以上記述したように、本発明によれば、電子ビーム出力の安定化を図ることが可能なフィラメントの支持方法、電子銃、及びその電子銃を備えた処理装置を提供することができる。 As described above, according to the present invention, it is possible to provide a filament supporting method, an electron gun, and a processing apparatus including the electron gun, which can stabilize the electron beam output.

一実施形態の電子銃の概略構成図。The schematic block diagram of the electron gun of one Embodiment. 図1の電子銃に設けられるエミッタ部の概略構成図。The schematic block diagram of the emitter part provided in the electron gun of FIG. 図1のフィラメントの一例を示す斜視図。The perspective view which shows an example of the filament of FIG. (a)(b)図1の電子銃に設けられるエミッタ部の説明図。(A) (b) Explanatory drawing of the emitter part provided in the electron gun of FIG. 図1の電子銃におけるフィラメントへの投入電力と電子ビーム出力との関係を示すグラフ。The graph which shows the relationship between the input electric power to the filament in the electron gun of FIG. 1, and an electron beam output. 図1の電子銃におけるフィラメントへの投入電力と電子ビーム出力との関係を示すグラフ。The graph which shows the relationship between the input electric power to the filament in the electron gun of FIG. 1, and an electron beam output. 図1の電子銃におけるカソード電極への投入電力と電子ビーム出力との関係を示すグラフ。The graph which shows the relationship between the input electric power to the cathode electrode in the electron gun of FIG. 1, and an electron beam output. (a)(b)図1の電子銃における電子ビームの出力安定性評価結果を示す波形図。(A) (b) The wave form diagram which shows the output stability evaluation result of the electron beam in the electron gun of FIG. (a)(b)図1の電子銃におけるフィラメントの耐用時間評価結果を示すグラフ。(A) (b) The graph which shows the lifetime evaluation result of the filament in the electron gun of FIG. 別の電子銃の概略構成図。The schematic block diagram of another electron gun. 別のフィラメントの斜視図。The perspective view of another filament.

 以下、一実施形態を説明する。
 図1に示すように、電子銃10は、処理装置30の側壁30aに取着されている。処理装置30は例えばMgO(酸化マグネシウム)などの金属酸化物の蒸着被膜をガラス基板などの基板の表面に形成するための蒸着室である。電子銃10は、例えばピアス式電子銃であり、その筐体11のフランジ11aが側壁30aに固定されている。
Hereinafter, an embodiment will be described.
As shown in FIG. 1, the electron gun 10 is attached to the side wall 30 a of the processing apparatus 30. The processing apparatus 30 is a vapor deposition chamber for forming a vapor deposited film of a metal oxide such as MgO (magnesium oxide) on the surface of a substrate such as a glass substrate. The electron gun 10 is, for example, a piercing electron gun, and a flange 11a of the casing 11 is fixed to the side wall 30a.

 電子銃10は、電子ビームEBを生成し、その電子ビームEBを筐体11の開口から処理装置30のプロセス室内に向かって射出する。その電子ビームEBは、プロセス室内に配置された対象物(蒸着材料)31に照射される。 The electron gun 10 generates an electron beam EB, and emits the electron beam EB from the opening of the housing 11 toward the process chamber of the processing apparatus 30. The electron beam EB is applied to an object (deposition material) 31 disposed in the process chamber.

 電子銃10は、フィラメント12、カソード電極13、イオンコレクタ14、ウェーネルト(Wehnelt )電極15、アノード電極16、フローレジスタ17、集束コイル18、揺動コイル19を含む。 The electron gun 10 includes a filament 12, a cathode electrode 13, an ion collector 14, a Wehnelt electrode 15, an anode electrode 16, a flow register 17, a focusing coil 18, and an oscillating coil 19.

 フィラメント12、カソード電極13、及びイオンコレクタ14は、電子ビームEBの射出方向に延びる光軸A上に配置されている。カソード電極13は、フィラメント12より射出側、即ち開口側に配置され、イオンコレクタ14は、フィラメント12より反射出側(反開口側)に配置されている。 The filament 12, the cathode electrode 13, and the ion collector 14 are disposed on the optical axis A extending in the emission direction of the electron beam EB. The cathode electrode 13 is disposed on the emission side, that is, the opening side from the filament 12, and the ion collector 14 is disposed on the reflection exit side (opposite opening side) from the filament 12.

 フィラメント12の中心部とカソード電極13とは光軸A方向において互いに対向するように配置されている。
 射出方向を中心としたカソード電極13の周囲は、ウェーネルト電極15によって囲繞されている。このウェーネルト電極15よりも射出側には、円錘筒状をなすアノード電極16が、それの貫通孔中心が光軸A上に位置するように配置されている。このアノード電極16よりも射出側には、円筒状のフローレジスタ17が、それの軸中心が光軸A上に位置するように配置されている。
The central portion of the filament 12 and the cathode electrode 13 are disposed so as to face each other in the optical axis A direction.
The periphery of the cathode electrode 13 centering on the emission direction is surrounded by the Wehnelt electrode 15. On the emission side of the Wehnelt electrode 15, an anode electrode 16 having a cylindrical shape is arranged so that the center of the through hole thereof is located on the optical axis A. A cylindrical flow register 17 is arranged on the emission side of the anode electrode 16 so that the axis center thereof is located on the optical axis A.

 フローレジスタ17の外周には、アノード電極16に近い位置から順に集束コイル18と揺動コイル19とが設けられている。集束コイル18は、それが発生する磁場によりアノード電極16を通過した電子ビームEBを集束させる。揺動コイル19は、それが発生する磁場により、電子ビームEBを揺動させる。 A focusing coil 18 and an oscillating coil 19 are provided on the outer periphery of the flow register 17 in order from a position close to the anode electrode 16. The focusing coil 18 focuses the electron beam EB that has passed through the anode electrode 16 by the magnetic field generated by the focusing coil 18. The oscillating coil 19 oscillates the electron beam EB by the magnetic field generated by it.

 フィラメント12はフィラメント電源21に接続され、そのフィラメント電源21から交流電流が供給される。カソード電極13及びウェーネルト電極15はカソード電源22に接続され、そのカソード電源22から直流電圧が印加される。アノード電極16は加速電源23に接続され、その加速電源23から直流電圧が印加される。これらカソード電極13、ウェーネルト電極15及びアノード電極16に印加される直流電圧は、フィラメント12の電位が最も低く、且つアノード電極16の電位が最も高くなるように設定される。 The filament 12 is connected to a filament power source 21, and an alternating current is supplied from the filament power source 21. The cathode electrode 13 and the Wehnelt electrode 15 are connected to a cathode power source 22, and a DC voltage is applied from the cathode power source 22. The anode electrode 16 is connected to an acceleration power source 23, and a DC voltage is applied from the acceleration power source 23. The DC voltage applied to the cathode electrode 13, the Wehnelt electrode 15 and the anode electrode 16 is set so that the potential of the filament 12 is the lowest and the potential of the anode electrode 16 is the highest.

 こうしたピアス式電子銃10ではまず、フィラメント電源21からの交流電流がフィラメント12に供給され、フィラメント12が2000K~3000Kに加熱されて熱電子を放出する。そして、この放出された熱電子が、カソード電源22によって上記フィラメント12に対して正の電位に維持されたカソード電極13により受け取られる。このとき同時にカソード電極13は、フィラメント12の輻射熱により加熱される。これら熱電子と輻射熱とにより、カソード電極13が加熱され、これも熱電子を放出する。このカソード電極13により放出された熱電子は、該カソード電極13と同電位であるウェーネルト電極15と、これらカソード電極13とウェーネルト電極15とに対して正の電位に維持されたアノード電極16との間の電位差によって加速されつつ、上記光軸Aに沿って飛行するようになる。そして、アノード電極16の貫通孔とこのアノード電極16に連結されたフローレジスタ17とを通過した熱電子は、筐体11の開口部から処理装置30内に向かって電子ビームEBとして放出される。 In such a pierce-type electron gun 10, first, an alternating current from the filament power source 21 is supplied to the filament 12, and the filament 12 is heated to 2000K to 3000K to emit thermoelectrons. The emitted thermoelectrons are received by the cathode electrode 13 maintained at a positive potential with respect to the filament 12 by the cathode power source 22. At the same time, the cathode electrode 13 is heated by the radiant heat of the filament 12. The cathode electrode 13 is heated by these thermoelectrons and radiant heat, and this also emits thermoelectrons. The thermoelectrons emitted by the cathode electrode 13 are a Wehnelt electrode 15 having the same potential as the cathode electrode 13 and an anode electrode 16 maintained at a positive potential with respect to the cathode electrode 13 and the Wehnelt electrode 15. The aircraft flies along the optical axis A while being accelerated by the potential difference therebetween. The thermoelectrons that have passed through the through hole of the anode electrode 16 and the flow register 17 connected to the anode electrode 16 are emitted as an electron beam EB from the opening of the housing 11 into the processing apparatus 30.

 この際、カソード電極13から放出される熱電子の一部が筐体11内及び処理装置30内においてそれらの内部に残留する気体に衝突すると、この残留気体が陽イオン化されて、この陽イオンが上記カソード電極13とアノード電極16との電圧により加速されることになる。この加速された陽イオンがカソード電極13に衝突すると、これに起因してカソード電極13に穴(凹み)が形成される。よって、こうした陽イオンが長期間にわたり放出されるとなれば、カソード電極13に貫通孔が形成されることになる。そこで、カソード電極13に対して照射方向と反対方向の位置に、つまりカソード電極13に対してアノード電極16と反対側の位置に上記イオンコレクタ14が配置されている。このイオンコレクタ14は、カソード電極13に形成された貫通孔を通過する陽イオン、すなわちイオンビームを吸収することにより、イオンビームによる電子銃10の損傷を抑制する。 At this time, if some of the thermoelectrons emitted from the cathode electrode 13 collide with the gas remaining in the casing 11 and the processing apparatus 30, the residual gas is cationized, and the cation becomes It is accelerated by the voltage of the cathode electrode 13 and the anode electrode 16. When this accelerated cation collides with the cathode electrode 13, a hole (dent) is formed in the cathode electrode 13 due to this collision. Therefore, if such cations are released over a long period of time, a through hole is formed in the cathode electrode 13. Therefore, the ion collector 14 is disposed at a position opposite to the irradiation direction with respect to the cathode electrode 13, that is, at a position opposite to the anode electrode 16 with respect to the cathode electrode 13. The ion collector 14 absorbs positive ions passing through the through holes formed in the cathode electrode 13, that is, an ion beam, thereby suppressing damage to the electron gun 10 due to the ion beam.

 次に、上記の電子銃10に含まれるエミッタ部40の構成を説明する。
 エミッタ部40は電子ビーム発生部であり、図2に示すように、上記のフィラメント12、カソード電極13、ウェーネルト電極15、アノード電極16、イオンコレクタ14を含む。フィラメント12の一例を図3に示す。
Next, the configuration of the emitter section 40 included in the electron gun 10 will be described.
The emitter section 40 is an electron beam generating section and includes the filament 12, the cathode electrode 13, the Wehnelt electrode 15, the anode electrode 16, and the ion collector 14, as shown in FIG. An example of the filament 12 is shown in FIG.

 フィラメント12は、高融点金属、例えばタングステン又はタングステン合金からなる。フィラメント12は、4つの面によりて構成された外周面を有する断面矩形状の線材である。このフィラメント12は、その外周面を構成する1つの面(カソード対向面)を含んだ仮想平面Pi上において3カ所の連続した屈曲12cからなる凹凸曲線状の屈曲部12aを有する。この屈曲部12aにおいて上記3カ所の屈曲12cが連なる方向の両端部には、カソード対向面の法線方向に延びる直線状の一対の脚部12bが折曲げ形成されている。つまり断面矩形状の線材であるフィラメント12は、これに含まれる屈曲のいずれもが外周面の一つに沿ったかたちをなすことによって、それの周方向の捻れを有しないように構成されている。 The filament 12 is made of a refractory metal such as tungsten or a tungsten alloy. The filament 12 is a wire having a rectangular cross section having an outer peripheral surface constituted by four surfaces. The filament 12 has an uneven curved bent portion 12a composed of three continuous bent 12c on a virtual plane Pi including one surface (cathode facing surface) constituting the outer peripheral surface thereof. A pair of straight legs 12b extending in the normal direction of the cathode-facing surface is bent at both ends of the bent portion 12a in the direction in which the three bent portions 12c are continuous. That is, the filament 12, which is a wire having a rectangular cross section, is configured so that any of the bendings included in the filament 12 do not have a twist in the circumferential direction by forming along one of the outer peripheral surfaces. .

 上記のフィラメント12は、例えば放電加工により作成される。この加工方法の概略を説明する。先ず、例えばタングステンの金属板が用意される。この金属板の板厚は例えば0.5mmであり、この厚さは光軸A方向のフィラメント12の幅(図1参照)に対応する。この金属板から、周知のワイヤ放電加工装置により、フィラメント12を形成するための線材が切り出される。この線材は、長手方向の中心部に屈曲部12aを有する。そして、線材の長手方向の両端部を折り曲げて脚部12bを形成することにより、フィラメント12が得られる。 The filament 12 is produced by, for example, electric discharge machining. An outline of this processing method will be described. First, for example, a tungsten metal plate is prepared. The thickness of this metal plate is, for example, 0.5 mm, and this thickness corresponds to the width of the filament 12 in the optical axis A direction (see FIG. 1). A wire rod for forming the filament 12 is cut out from the metal plate by a known wire electric discharge machining apparatus. This wire has a bent portion 12a at the center in the longitudinal direction. And the filament 12 is obtained by bending the both ends of the longitudinal direction of a wire, and forming the leg part 12b.

 図2に示すように、上記のフィラメント12は、ベース41に固定された支持部材としてのフィラメント支柱42,43に取着されている。
 エミッタ部40はベース41を含み、このベース41はボルト等によってエミッタケース(いずれも図示略)に固定される。ベース41には2本のフィラメント支柱42,43が取着されている。本例では、ベース41に形成された2つの貫通孔に2本のフィラメント支柱42,43が絶縁碍子44,45を介して挿通され、ナット46,47により固定されている。
As shown in FIG. 2, the filament 12 is attached to filament struts 42 and 43 as support members fixed to the base 41.
The emitter section 40 includes a base 41, and the base 41 is fixed to an emitter case (both not shown) by bolts or the like. Two filament struts 42 and 43 are attached to the base 41. In this example, two filament struts 42 and 43 are inserted through two through holes formed in the base 41 via insulators 44 and 45, and are fixed by nuts 46 and 47.

 各フィラメント支柱42,43は、フィラメント12を支持する先端とベース41に固定される基端とを有している。本例では、各フィラメント支柱42,43の先端には、フィラメント12の脚部12bを挿入する挿入部が形成されている。そして、フィラメント支柱42,43の挿入部にそれぞれ挿入されたフィラメント12の脚部12bを例えばセットビス(止めねじ)48,49によりフィラメント支柱42,43に対して固定することにより、フィラメント12がフィラメント支柱42,43に取着されている。 The filament struts 42 and 43 each have a distal end that supports the filament 12 and a proximal end that is fixed to the base 41. In this example, insertion portions for inserting the leg portions 12b of the filaments 12 are formed at the tips of the filament struts 42 and 43, respectively. Then, the filament 12 is fixed to the filament struts 42 and 43 by, for example, set screws (set screws) 48 and 49 by inserting the leg portions 12b of the filament 12 inserted into the insertion portions of the filament struts 42 and 43, respectively. It is attached to the columns 42 and 43.

 フィラメント支柱42,43にはそれぞれフィラメント配線50,51が接続され、その配線50,51とフィラメント支柱42,43を介してフィラメント12に交流電流が供給される。 Filament wires 50 and 51 are connected to the filament posts 42 and 43, respectively, and an alternating current is supplied to the filament 12 through the wires 50 and 51 and the filament posts 42 and 43.

 カソード電極13は、ベース41を取着する上記エミッタケース(図示略)に取着され、フィラメント12と対向するように配置される。カソード電極13の前方(電子ビームの射出方向であって、図2において右方向)には上記エミッタケースに取着されたウェーネルト電極15が配置されている。 The cathode electrode 13 is attached to the emitter case (not shown) to which the base 41 is attached, and is disposed so as to face the filament 12. A Wehnelt electrode 15 attached to the emitter case is disposed in front of the cathode electrode 13 (in the electron beam emission direction and rightward in FIG. 2).

 上記のベース41には、フィラメント支柱42,43の間の位置に絶縁体(例えば碍子)52が取着され、その絶縁体の先端にイオンコレクタ14が取着されている。このイオンコレクタ14は、上記したように、フィラメント12に対し、カソード電極13と反対側に配置されている。なお、イオンコレクタ14は、図示しない配線により、フィラメント支柱42,43のうちの何れか一方と接続されている。 An insulator (for example, insulator) 52 is attached to the base 41 at a position between the filament columns 42 and 43, and the ion collector 14 is attached to the tip of the insulator. As described above, the ion collector 14 is disposed on the side opposite to the cathode electrode 13 with respect to the filament 12. The ion collector 14 is connected to one of the filament struts 42 and 43 by wiring not shown.

 各フィラメント支柱42,43は、互いに異なる材質を有する複数の部材からなる箇所を少なくとも部分的に含む。つまりこの箇所は、各フィラメント支柱42,43の一部であってもよいし各フィラメント支柱42,43の全体であってもよい。例えば各フィラメント支柱42,43においてベース41に固定される位置から先端までの箇所が、互いに異なる材質を有する複数の部材により構成されてもよい。本実施形態では、フィラメント支柱42は、その基端をベース41に固定するための固定部42aと、この固定部42aから延びる支持部42bと、この支持部42bの先端(つまりフィラメント支柱42の先端)に形成されてフィラメント12が取着される先端部42cとを有する。そして、このフィラメント支柱42の支持部42bが、異なる材質を有する複数の部材から構成されている。同様に、フィラメント支柱43は、その基端をベース41に固定するための固定部43aと、この固定部43aから延びる支持部43bと、この支持部43bの先端(つまりフィラメント支柱43の先端)に形成されてフィラメント12が取着される先端部43cとを有する。そして、このフィラメント支柱43の支持部43bが、異なる材質を有する複数の部材から構成されている。なお、本実施形態では、フィラメント支柱42,43は同じ構成である。 The filament struts 42 and 43 at least partially include a portion made of a plurality of members having different materials. That is, this part may be a part of each filament support 42 or 43 or the entire filament support 42 or 43. For example, the location from the position fixed to the base 41 to the tip of each filament support 42, 43 may be constituted by a plurality of members having different materials. In the present embodiment, the filament post 42 has a fixing portion 42a for fixing the base end to the base 41, a support portion 42b extending from the fixing portion 42a, and the tip of the support portion 42b (that is, the tip of the filament post 42). ) And a tip end portion 42c to which the filament 12 is attached. And the support part 42b of this filament support | pillar 42 is comprised from the several member which has a different material. Similarly, the filament strut 43 has a fixing portion 43a for fixing its base end to the base 41, a support portion 43b extending from the fixing portion 43a, and a tip of the support portion 43b (that is, the tip of the filament strut 43). And a tip 43c to which the filament 12 is attached. And the support part 43b of this filament support | pillar 43 is comprised from the several member which has a different material. In the present embodiment, the filament struts 42 and 43 have the same configuration.

 両フィラメント支柱42,43は、電子ビームEBが放射されているとき、つまり、フィラメント12に通電されているときに、その通電によりフィラメント12に発生する伸縮を吸収するように構成されている。フィラメント12は通電により発熱する。そして、フィラメント12は、その材質がタングステン又はタングステン合金であるため、発熱による温度上昇に従って伸びる。つまり、2つの脚部12bの間隔が広がる。このため、フィラメント支柱42,43は、それぞれの先端がフィラメント12の伸びに対応して変位するように、つまり、温度上昇に従って2つのフィラメント支柱42,43の先端間の間隔が広がるように構成されている。 Both filament struts 42 and 43 are configured to absorb expansion and contraction generated in the filament 12 when the electron beam EB is emitted, that is, when the filament 12 is energized. The filament 12 generates heat when energized. And since the material of the filament 12 is tungsten or a tungsten alloy, it extends according to the temperature rise by heat_generation | fever. That is, the interval between the two leg portions 12b increases. For this reason, the filament struts 42 and 43 are configured so that their respective tips are displaced corresponding to the elongation of the filament 12, that is, the distance between the tips of the two filament struts 42 and 43 increases as the temperature rises. ing.

 フィラメント支柱42,43の構成例を説明する。本実施形態のフィラメント支柱42,43において、支持部42b,43bの各々は、2種類の部材すなわち第1の部材B1と第2の部材B2とにより構成されている。第1の部材B1と第2の部材B2は、互いに異なる線膨張係数すなわち熱膨張係数を有する材料で形成されている。例えば、第1の部材B1はモリブデン(Mo)であり、第2の部材B2はタンタル(Ta)である。しかしながら、後述するように、部材B1,B2の組み合わせは、モリブデンとタンタルに限定されない。つまり、フィラメント支柱42,43の各々は、第1の側部と、該第1の側部と反対側の第2の側部とを有し、フィラメント支柱42,43がベース41に固定された状態で、それらの第2の側部が互いに対向するものとなっている。そして、各フィラメント支柱42,43の第1の側部(本例では、各支持部42b,43bの第1の側部)に、第1の線膨張係数を有する第1の部材B1が配置されている。一方、各フィラメント支柱42,43の第2の側部(本例では、各支持部42b,43bの第2の側部)に、第1の線膨張係数よりも大きな第2の線膨張係数を有する第2の部材B2が配置されている。すると、互いに異なる線膨張係数を有する2つの部材B1,B2の配置関係に基づいて、両フィラメント支柱42,43の先端は、温度上昇に従って互いに離間する方向に変位する。 A configuration example of the filament struts 42 and 43 will be described. In the filament struts 42 and 43 of the present embodiment, each of the support portions 42b and 43b includes two types of members, that is, a first member B1 and a second member B2. The first member B1 and the second member B2 are formed of materials having different linear expansion coefficients, that is, thermal expansion coefficients. For example, the first member B1 is molybdenum (Mo), and the second member B2 is tantalum (Ta). However, as will be described later, the combination of the members B1 and B2 is not limited to molybdenum and tantalum. In other words, each of the filament struts 42 and 43 has a first side and a second side opposite to the first side, and the filament struts 42 and 43 are fixed to the base 41. In the state, those second side portions face each other. And the 1st member B1 which has a 1st linear expansion coefficient is arrange | positioned in the 1st side part (this example 1st side part of each support part 42b, 43b) of each filament support | pillar 42,43. ing. On the other hand, a second linear expansion coefficient larger than the first linear expansion coefficient is applied to the second side portions of the filament struts 42 and 43 (in this example, the second side portions of the support portions 42b and 43b). The 2nd member B2 which has is arrange | positioned. Then, based on the arrangement relationship between the two members B1 and B2 having different linear expansion coefficients, the tips of the filament struts 42 and 43 are displaced in directions away from each other as the temperature rises.

 上記したように、フィラメント12は、温度上昇に従って伸びる。仮に2つのフィラメント支柱42,43が変形しない場合、図4(b)に示すように、脚部12bの位置が変化しないため、フィラメント12は、その伸びによって、電子ビームの射出方向(図4(b)において上方)に向って凸状に変形する。つまり、図4(b)に矢印で示す距離Lsbが長くなる。尚、室温におけるフィラメント12の位置を一点鎖線で示す。そして、この変形によって、フィラメント12の屈曲部12aに加熱中、応力が加わることになる。電子銃の駆動を停止すると、フィラメント12の温度が下がるため、フィラメント12は元の状態(一点鎖線の位置)に戻ろうとする。つまり、フィラメント12には、電子銃の駆動・停止に従って、曲げ延ばしの応力が繰り返し加わることになる。この応力は、フィラメント12を断線させる要因となる。 As described above, the filament 12 extends as the temperature rises. If the two filament struts 42 and 43 are not deformed, as shown in FIG. 4B, the position of the leg 12b does not change. In b), it is deformed convexly upward. That is, the distance Lsb indicated by the arrow in FIG. In addition, the position of the filament 12 at room temperature is indicated by a one-dot chain line. Due to this deformation, stress is applied to the bent portion 12a of the filament 12 during heating. When the driving of the electron gun is stopped, the temperature of the filament 12 decreases, so that the filament 12 attempts to return to the original state (position of the one-dot chain line). In other words, the bending stress is repeatedly applied to the filament 12 as the electron gun is driven / stopped. This stress causes the filament 12 to break.

 一方、図4(a)に示すように、本実施形態のフィラメント支柱42,43では、温度上昇に従ってそれらの先端の間隔が広がる。その広がりが、フィラメント12の伸びとほぼ等しければ、屈曲部12aの位置は、温度を加えていない通常時の位置とほぼ等しくなる。つまり、図4(a)に矢印で示す距離Lsaは変化しない。尚、先端の間隔の広がりがフィラメント12の伸びより少なくても、先端が変位しない場合と比べて、屈曲部12aの移動量、つまりフィラメント12の変形(湾曲)は少なくなる。なお、図4(a)では、各フィラメント支柱42,43の基端から先端までを全て第1の部材B1及び第2の部材B2として示している。 On the other hand, as shown in FIG. 4 (a), in the filament struts 42 and 43 of the present embodiment, the distance between their tips increases as the temperature rises. If the spread is substantially equal to the elongation of the filament 12, the position of the bent portion 12a is substantially equal to the normal position where no temperature is applied. That is, the distance Lsa indicated by the arrow in FIG. Even if the distance between the tips is less than the extension of the filament 12, the amount of movement of the bent portion 12a, that is, the deformation (curvature) of the filament 12 is smaller than when the tip is not displaced. In FIG. 4A, the filament struts 42, 43 are all shown as the first member B1 and the second member B2 from the proximal end to the distal end.

 図4(a)及び(b)において、フィラメント12の上方にはカソード電極13(図2参照)が配置されている。従って、図4(a)に示すようにフィラメント支柱42,43の先端が広がると、フィラメント12の屈曲部12aの位置変化が抑えられるため、フィラメント12とカソード電極13との距離Lsaは、図4(b)に示す場合と比べて少なくなる。つまり、温度上昇にともなうフィラメント12とカソード電極13との間の距離Lsaの変動が抑制されることになる。 4 (a) and 4 (b), a cathode electrode 13 (see FIG. 2) is disposed above the filament 12. FIG. Therefore, as shown in FIG. 4A, when the tips of the filament struts 42 and 43 spread, the change in the position of the bent portion 12a of the filament 12 is suppressed, so the distance Lsa between the filament 12 and the cathode electrode 13 is as shown in FIG. Compared to the case shown in (b). That is, the fluctuation of the distance Lsa between the filament 12 and the cathode electrode 13 accompanying the temperature rise is suppressed.

 (実施例)
 厚さが0.5mmのタングステン板を金属板として用い、当該タングステン板に対してワイヤ放電加工装置を用いて上記のフィラメント12を得た。
(Example)
A tungsten plate having a thickness of 0.5 mm was used as a metal plate, and the filament 12 was obtained using a wire electric discharge machining apparatus for the tungsten plate.

 フィラメント12の長さ(両脚部12bの中心間の距離)は、室温において35mm、電子ビームEBの出力時(フィラメント温度は2800k)において35.5mmである。 The length of the filament 12 (the distance between the centers of both legs 12b) is 35 mm at room temperature, and 35.5 mm at the time of output of the electron beam EB (filament temperature is 2800 k).

 フィラメント支柱42,43の支持部42b,43bの各々を、第1の部材B1及び第2の部材B2により構成し、第1の部材B1をモリブデンとし、第2の部材B2をタンタルとした。第1及び第2の部材B1,B2の長さL(図2Aの光軸Aに沿った方向)は11.5mm、厚さ(光軸Aと直交する方向)は3.5mmである。各フィラメント支柱42,43の先端の変位量(光軸Aと直交する方向)は、0.2~0.25mmである。 Each of the support portions 42b and 43b of the filament struts 42 and 43 is constituted by the first member B1 and the second member B2, and the first member B1 is made of molybdenum and the second member B2 is made of tantalum. The length L (the direction along the optical axis A in FIG. 2A) of the first and second members B1 and B2 is 11.5 mm, and the thickness (the direction orthogonal to the optical axis A) is 3.5 mm. The displacement amount (direction perpendicular to the optical axis A) of the tips of the filament struts 42 and 43 is 0.2 to 0.25 mm.

 なお、各フィラメント支柱42,43は、それぞれの先端の変位量が互いに等しいことが好ましい。これは、光軸Aに対して、フィラメント12の屈曲部12aと、カソード電極13との相対的な位置ずれ(軸ずれ)を防ぐ。また、各フィラメント支柱42,43の先端の変位量は、光軸Aに沿った方向において、フィラメント12の屈曲部12aとカソード電極13との距離の変動量が±1mm以内であるように設定されることが好ましい。 In addition, it is preferable that each filament support | pillar 42 and 43 has the mutually equal displacement amount of each front-end | tip. This prevents relative displacement (axial displacement) between the bent portion 12a of the filament 12 and the cathode electrode 13 with respect to the optical axis A. Further, the amount of displacement of the tip of each filament support 42, 43 is set so that the amount of variation in the distance between the bent portion 12a of the filament 12 and the cathode electrode 13 is within ± 1 mm in the direction along the optical axis A. It is preferable.

 なお電子銃10が放出する電子ビームEBの出力を制御する方法としては、いわゆるフィラメント制御とカソード制御とが知られている。フィラメント制御は、カソード電圧を一定とし、フィラメント12に投入する電力を制御することにより、フィラメント12とカソード電極13との間に印加される電圧を変化させて電子ビームEBの出力を制御する方法である。カソード制御は、フィラメント12に投入する電力を一定とし、上記カソード電圧を制御する方法である。 As a method for controlling the output of the electron beam EB emitted from the electron gun 10, so-called filament control and cathode control are known. The filament control is a method of controlling the output of the electron beam EB by changing the voltage applied between the filament 12 and the cathode electrode 13 by controlling the electric power supplied to the filament 12 while keeping the cathode voltage constant. is there. The cathode control is a method of controlling the cathode voltage while keeping the electric power supplied to the filament 12 constant.

 以下では、これら2つの制御方法のうち、フィラメント制御により電子銃10を駆動して得られた結果を示す。
 電子銃10から射出される電子ビームEBの出力の各種照射条件に関する依存性を計測した。なお、計測に使用する電子銃10及び電子銃電源の定格出力は30kW(加速電圧20kV×1.5A)である。
Below, the result obtained by driving the electron gun 10 by filament control among these two control methods is shown.
The dependence of the output of the electron beam EB emitted from the electron gun 10 on various irradiation conditions was measured. The rated output of the electron gun 10 and the electron gun power source used for measurement is 30 kW (acceleration voltage 20 kV × 1.5 A).

 図5は、下記の照射条件において、フィラメント12への投入電力と電子ビームEBの出力との関係をF-C距離(フィラメント12とカソード電極13との距離)ごとに示す図である。ここで、図5では、F-C距離が2.6mmのときに得られた結果を黒丸にて、他方、F-C距離が4.2mmのときに得られた結果を黒四角にてそれぞれ示している。
・カソード電圧:1.2kV
・F-C距離:2.6mm,4.2mm
 電子ビームEBの出力を17kVとするときのフィラメント12への投入電力は、F-C距離を2.6mmに設定した場合、4.2mmに設定した場合に比べ約10%低減できることがわかる。これは、F-C距離が短い方が、フィラメント12から放出された熱電子がカソード電極13に引き込まれやすいためと考えられる。
FIG. 5 is a diagram showing the relationship between the input power to the filament 12 and the output of the electron beam EB for each FC distance (distance between the filament 12 and the cathode electrode 13) under the following irradiation conditions. Here, in FIG. 5, the results obtained when the FC distance is 2.6 mm are indicated by black circles, while the results obtained when the FC distance is 4.2 mm are indicated by black squares. Show.
・ Cathode voltage: 1.2kV
・ FC distance: 2.6mm, 4.2mm
It can be seen that the input power to the filament 12 when the output of the electron beam EB is 17 kV can be reduced by about 10% when the FC distance is set to 2.6 mm, compared with the case where it is set to 4.2 mm. This is considered to be because thermal electrons emitted from the filament 12 are more easily drawn into the cathode electrode 13 when the FC distance is shorter.

 図6は、下記の照射条件において、フィラメント12への投入電力と電子ビームの出力との関係をカソード電圧ごとに示す図である。図6では、カソード電圧が1.0kVのときに得られた結果を黒菱形にて、カソード電圧が1.2kVのときに得られた結果を黒丸にて、さらに、カソード電圧が1.4kVのときに得られた結果を黒三角にて、それぞれ示している。
・カソード電圧:1.0kV,1.2kV,1.4kV
・F-C距離:2.6mm
 電子ビームEBの出力を17kVとするときのフィラメント12への投入電力は、カソード電圧が高い程、小さくなる。これは、カソード電圧が高い分だけ、フィラメント12から放出された熱電子がカソード電極13に引き込まれやすくなるためと考えられる。しかしながら、それぞれのカソード電圧に係るグラフの傾きから、カソード電圧が低いほど電子ビームEBの出力の制御性が向上することがわかる(つまり、図6において、カソード電圧が低いほど、グラフの傾きが緩やかである)。
FIG. 6 is a diagram showing the relationship between the input power to the filament 12 and the output of the electron beam for each cathode voltage under the following irradiation conditions. In FIG. 6, the results obtained when the cathode voltage is 1.0 kV are indicated by black diamonds, the results obtained when the cathode voltage is 1.2 kV are indicated by black circles, and the cathode voltage is 1.4 kV. The results obtained at times are indicated by black triangles.
・ Cathode voltage: 1.0 kV, 1.2 kV, 1.4 kV
・ FC distance: 2.6mm
The input power to the filament 12 when the output of the electron beam EB is 17 kV decreases as the cathode voltage increases. This is presumably because thermoelectrons emitted from the filament 12 are easily drawn into the cathode electrode 13 as the cathode voltage is higher. However, it can be seen from the slopes of the graphs relating to the respective cathode voltages that the controllability of the output of the electron beam EB is improved as the cathode voltage is lower (that is, the lower the cathode voltage, the lower the slope of the graph in FIG. 6). Is).

 図7は、下記の照射条件において、カソード電極13への投入電圧と電子ビームEBの出力との関係をF-C距離ごとに示す図である。なお、カソード電極13への投入電圧は、カソード電圧と、フィラメント12とカソード電極13との間に流れる電流との積である。図7では、F-C距離が2.6mmのときに得られた結果を黒丸にて、他方、F-C距離が4.2mmのときに得られた結果を黒四角にてそれぞれ示している。
・カソード電圧:1.2kV
・F-C距離:2.6mm,4.2mm
 電子ビームEBの出力を17kVとするときのカソード電極13への投入電力は、F-C距離を2.6mmとした場合、F-C距離を4.2mmとした場合に比べ約40%低減されることが分かる。これは、主にF-C距離が近い方が、熱輻射の形態係数、すなわちフィラメント12から輻射される熱のうち、カソード電極13に到達する熱の割合が大きくなったためと考えられる。また、空間電荷の量が制限されることから、F-C距離が大きい程、高いカソード電圧が必要になることも一因であると考えられる。
FIG. 7 is a diagram showing the relationship between the voltage applied to the cathode electrode 13 and the output of the electron beam EB for each FC distance under the following irradiation conditions. The voltage applied to the cathode electrode 13 is the product of the cathode voltage and the current flowing between the filament 12 and the cathode electrode 13. In FIG. 7, the results obtained when the FC distance is 2.6 mm are indicated by black circles, while the results obtained when the FC distance is 4.2 mm are indicated by black squares. .
・ Cathode voltage: 1.2kV
・ FC distance: 2.6mm, 4.2mm
When the output of the electron beam EB is 17 kV, the input power to the cathode electrode 13 is reduced by about 40% when the FC distance is 2.6 mm, compared to when the FC distance is 4.2 mm. I understand that This is presumably because the heat radiation form factor, that is, the ratio of the heat reaching the cathode electrode 13 out of the heat radiated from the filament 12 is larger when the FC distance is shorter. In addition, since the amount of space charge is limited, it is considered that a higher cathode voltage is required as the FC distance is larger.

 次に、本実施形態のエミッタ部40を搭載した電子銃10と、従来のエミッタ部、即ちフィラメント支柱がフィラメントの伸びに対応して変形しないエミッタ部を搭載した電子銃の出力安定性をそれぞれ測定した。なお、電子銃及び電子銃電源の定格出力は30kW(加速電圧20kV×1.5A)である。また、測定時間は約30時間である。 Next, the output stability of the electron gun 10 equipped with the emitter section 40 of the present embodiment and the conventional emitter section, that is, the electron gun equipped with the emitter section in which the filament column does not deform corresponding to the elongation of the filament, are measured. did. The rated output of the electron gun and the electron gun power source is 30 kW (acceleration voltage 20 kV × 1.5 A). The measurement time is about 30 hours.

 本実施形態の電子銃10の測定結果を図8(a)に示し、従来構成の電子銃の測定結果を図8(b)に示す。
 従来構成の電子銃では、フィラメントの変形(伸び)によるカソード電極との接触を防ぐためにF-C距離を4.2mmに設定している。従来構成の電子銃では、ビーム電流値850mAに対して+3mA/-2mAのビーム電流値の変動があった。
FIG. 8A shows the measurement result of the electron gun 10 of the present embodiment, and FIG. 8B shows the measurement result of the electron gun of the conventional configuration.
In the conventional electron gun, the FC distance is set to 4.2 mm in order to prevent contact with the cathode electrode due to deformation (elongation) of the filament. In the conventional electron gun, the beam current value fluctuated by +3 mA / −2 mA with respect to the beam current value of 850 mA.

 一方、本実施形態の電子銃10では、フィラメント12の伸びをフィラメント支柱42,43が吸収するように変形するため、F-C距離を2.6mmに設定している。この電子銃10では、ビーム電流値850mAに対して+1mA/-1mAのビーム電流値の変動が観察された。つまり、本実施形態の電子銃10は、従来構成に比べビーム電流値の変動幅を1/2.5に改善できたことになる。 On the other hand, in the electron gun 10 of the present embodiment, the FC distance is set to 2.6 mm in order to deform the filament 12 so that the filament struts 42 and 43 absorb the elongation of the filament 12. In this electron gun 10, a change in beam current value of +1 mA / −1 mA was observed with respect to a beam current value of 850 mA. That is, the electron gun 10 of this embodiment can improve the fluctuation range of the beam current value to 1 / 2.5 compared to the conventional configuration.

 これは、本実施形態のエミッタ部40により通電時のフィラメント12とカソード電極13との距離の変動を少なくできたためと考えられる。また、フィラメント12とカソード電極13との距離を短くしたため、カソード電圧が低く設定でき、電子ビームのEBの出力の制御性がよくなったためと考えられる。 This is considered to be because the fluctuation of the distance between the filament 12 and the cathode electrode 13 during energization can be reduced by the emitter section 40 of the present embodiment. Further, it is considered that the cathode voltage can be set low because the distance between the filament 12 and the cathode electrode 13 is shortened, and the controllability of the EB output of the electron beam is improved.

 次に、本実施形態の電子銃10と従来構成の電子銃において、それぞれ25本のフィラメントについて、フィラメントに通電を開始してからフィラメントが断線するまでの稼動時間をフィラメント寿命(フィラメントライフ)として測定した。それぞれの電子銃から射出される電子ビームEBの出力は17kWである。 Next, in the electron gun 10 of the present embodiment and the electron gun of the conventional configuration, for each of 25 filaments, the operating time from when the filament is energized until the filament breaks is measured as the filament life (filament life) did. The output of the electron beam EB emitted from each electron gun is 17 kW.

 本実施形態の電子銃10による測定結果を図9(a)に示し、従来構成の電子銃による測定結果を図9(b)に示す。
 従来構成の電子銃を使用したフィラメント寿命の平均値は、663時間であった。一方、本実施形態の電子銃10を使用したフィラメント寿命の平均値は、875時間であった。この結果、本実施形態の電子銃10は、従来構成の電子銃に比べ、フィラメント寿命を平均値で約1.3倍とすることができたことになる。これは、本実施形態のエミッタ部40によりフィラメント12に加わる応力を低減できたためと考えられる。また、フィラメント12とカソード電極13との間の距離を短くできるため、フィラメント12に投入する電力が少なくてもカソード電極13を必要な温度まで上げることが可能となり、フィラメント温度を抑えることができたためと考えられる。
The measurement result with the electron gun 10 of this embodiment is shown in FIG. 9A, and the measurement result with the electron gun of the conventional configuration is shown in FIG. 9B.
The average filament lifetime using a conventional electron gun was 663 hours. On the other hand, the average filament life using the electron gun 10 of this embodiment was 875 hours. As a result, the electron gun 10 of the present embodiment has an average filament life of about 1.3 times that of the conventional electron gun. This is probably because the stress applied to the filament 12 by the emitter section 40 of the present embodiment can be reduced. In addition, since the distance between the filament 12 and the cathode electrode 13 can be shortened, the cathode electrode 13 can be raised to a necessary temperature even when the power supplied to the filament 12 is small, and the filament temperature can be suppressed. it is conceivable that.

 通常、電子銃のフィラメントは、線材を曲げ加工することにより得ることができる。このようなフィラメントに対し、本実施形態のフィラメント12は、加工歪みが少ないために、熱変形が少ない。なぜなら、本実施形態のフィラメント12は、曲げ加工を行うのではなく、屈曲部12aを有する形で1枚の金属板から線材が切り出されるためである。そのため、フィラメント12に交流電流が供給される際に、フィラメント12のカソード電極13に向かう方向への変位が線材の曲げ加工によって作成されたフィラメントよりも抑制されることとなる。つまり、これらフィラメント12とカソード電極13との距離(F-C距離)が安定化される。それゆえに、電子ビームEBの出力を得る上において、F-C距離が安定した分だけフィラメント12の加熱条件がより緩和されることになる。従って、電子銃10から放出される電子ビームEBの出力の安定性が向上可能となる。 Usually, the filament of an electron gun can be obtained by bending a wire. In contrast to such a filament, the filament 12 of the present embodiment is less subject to thermal deformation because of less processing distortion. This is because the filament 12 of this embodiment is not subjected to bending, but a wire rod is cut out from one metal plate in a form having a bent portion 12a. Therefore, when an alternating current is supplied to the filament 12, the displacement of the filament 12 in the direction toward the cathode electrode 13 is suppressed more than the filament created by bending the wire. That is, the distance (FC distance) between the filament 12 and the cathode electrode 13 is stabilized. Therefore, in obtaining the output of the electron beam EB, the heating condition of the filament 12 is further relaxed by the amount of stabilization of the FC distance. Therefore, the stability of the output of the electron beam EB emitted from the electron gun 10 can be improved.

 上記構成の電子銃10は、各種の処理装置に用いられ得る。処理装置は、例えば、溶解装置、表面処理装置、成膜装置である。例えば、成膜装置では、保護膜(例えば酸化マグネシウム:MgO)を基板表面に成膜する加熱源として上記の電子銃10が用いられる。この場合、例えば電子銃10は、処理室(蒸着室)の側壁に固定され、その電子銃10から射出された電子ビームEBが、偏向器などによって、蒸発源であるハース内の酸化マグネシウムの蒸発ポイントに照射される。この電子ビームEBにより、酸化マグネシウムの蒸発流が発生し、その蒸発流を通過するように移動するキャリアに搭載された基板の表面に酸化マグネシウムの被膜が形成される。電子銃10から射出される電子ビームEBが安定化されることにより、酸化マグネシウムの蒸発流が安定して発生されるため、基板表面に均一の被膜を形成することができる。なお、被膜の材料として、酸化マグネシウムの他に、酸化シリコン(SiO2)、酸化チタン(TiO2)、アルミニウム(Al)、ニッケル・コバルト合金(CoNi)、銅(Cu)を含む群から選択される少なくとも1つの金属、金属酸化物、金属化合物等の蒸着材料が用いられる。他の処理装置においても、同様に、安定した処理を行うことができるようになる。 The electron gun 10 having the above configuration can be used in various processing apparatuses. The processing apparatus is, for example, a melting apparatus, a surface processing apparatus, or a film forming apparatus. For example, in the film forming apparatus, the electron gun 10 is used as a heating source for forming a protective film (for example, magnesium oxide: MgO) on the substrate surface. In this case, for example, the electron gun 10 is fixed to the side wall of the processing chamber (deposition chamber), and the electron beam EB emitted from the electron gun 10 evaporates magnesium oxide in the hearth as an evaporation source by a deflector or the like. The point is illuminated. This electron beam EB generates an evaporating flow of magnesium oxide, and a magnesium oxide film is formed on the surface of the substrate mounted on the carrier that moves so as to pass through the evaporating flow. Since the electron beam EB emitted from the electron gun 10 is stabilized, an evaporating flow of magnesium oxide is stably generated, so that a uniform film can be formed on the substrate surface. The material of the coating is selected from the group including silicon oxide (SiO 2 ), titanium oxide (TiO 2 ), aluminum (Al), nickel / cobalt alloy (CoNi), and copper (Cu) in addition to magnesium oxide. A vapor deposition material such as at least one metal, metal oxide, or metal compound is used. Similarly, other processing apparatuses can perform stable processing.

 以上記述したように、本実施の形態によれば、以下の効果を奏する。
 (1)電子銃10は、カソード電極13を熱電子により加熱するために通電されるフィラメント12と、このフィラメント12を支持する支持部材としてのフィラメント支柱42,43とを含む。フィラメント支柱42,43はそれぞれ、フィラメント12が取着される先端部42c,43cと、ベース41に固定される固定部42a,43aとを有する。各フィラメント支柱42,43は、通電によりフィラメント12に発生する伸びに応じて先端部42c,43cを変位させる。
As described above, according to the present embodiment, the following effects can be obtained.
(1) The electron gun 10 includes a filament 12 that is energized to heat the cathode electrode 13 with thermoelectrons, and filament struts 42 and 43 as support members that support the filament 12. The filament struts 42 and 43 have front end portions 42c and 43c to which the filament 12 is attached, and fixing portions 42a and 43a fixed to the base 41, respectively. The filament struts 42 and 43 displace the tip portions 42c and 43c according to the elongation generated in the filament 12 by energization.

 このため、フィラメント12を支持するフィラメント支柱42,43の先端部42c,43cが変位することにより、フィラメント12の伸びが吸収されるため、フィラメント12の屈曲部12aの変位量が抑制される。従って、フィラメント12とカソード電極13との間の距離の変動が抑えられる。この結果、電子ビームEBの出力を安定化することができる。 For this reason, the displacement of the bent portion 12a of the filament 12 is suppressed because the extension of the filament 12 is absorbed by the displacement of the tip portions 42c, 43c of the filament columns 42, 43 that support the filament 12. Therefore, fluctuations in the distance between the filament 12 and the cathode electrode 13 are suppressed. As a result, the output of the electron beam EB can be stabilized.

 (2)フィラメント12には通電により伸びが発生する。そして、フィラメント支柱42,43は、フィラメント12に対する通電中の熱に応じて、フィラメント12を支持する先端部42c,43cを変位させる。従って、通電中の熱により発生するフィラメント12の伸びに応じてフィラメント支柱42,43の先端部42c,43cを変位させることが可能となり、フィラメント12の伸びを吸収することができる。 (2) The filament 12 is stretched by energization. And the filament support | pillars 42 and 43 displace the front-end | tip parts 42c and 43c which support the filament 12 according to the heat | fever during the electricity supply with respect to the filament 12. FIG. Therefore, it becomes possible to displace the tip portions 42c and 43c of the filament posts 42 and 43 according to the elongation of the filament 12 generated by the energized heat, and the elongation of the filament 12 can be absorbed.

 (3)フィラメント支柱42,43は、フィラメント12の伸びに応じて、フィラメント12が取着された先端部42c,43cをフィラメント12の伸びの方向に沿って変位させる。従って、フィラメント支柱42,43の先端部42c,43cの変位によってフィラメント12の伸びが吸収されるため、フィラメント12とカソード電極13との間の距離の変動を抑えることが可能になる。 (3) The filament struts 42 and 43 displace the tip portions 42 c and 43 c to which the filament 12 is attached along the direction of the filament 12 according to the elongation of the filament 12. Accordingly, since the elongation of the filament 12 is absorbed by the displacement of the tip portions 42c and 43c of the filament columns 42 and 43, it is possible to suppress the variation in the distance between the filament 12 and the cathode electrode 13.

 (4)フィラメント支柱42,43は、フィラメント12の伸びに応じて、それぞれの先端部42c,43cを互いに逆方向に変位させる。フィラメント12の脚部12bが2つのフィラメント支柱42,43にそれぞれ固定されているため、フィラメント12の伸びは、2つの端部すなわち2つの脚部12bへ向かう方向に発生する。従って、フィラメント支柱42,43の先端部42c,43cを互いに逆方向に変位させることで、フィラメント12に発生する伸びを容易に吸収することができる。 (4) The filament struts 42 and 43 displace the respective tip portions 42c and 43c in opposite directions according to the elongation of the filament 12. Since the leg portion 12b of the filament 12 is fixed to the two filament struts 42 and 43, respectively, the elongation of the filament 12 occurs in the direction toward the two ends, that is, the two leg portions 12b. Therefore, the elongation generated in the filament 12 can be easily absorbed by displacing the tip portions 42c, 43c of the filament struts 42, 43 in opposite directions.

 (5)フィラメント支柱42,43は、互いに異なる熱膨張係数を有する複数の部材B1,B2を含んで構成される。従って、部材B1,B2の線膨張係数すなわち熱膨張係数の差によって、先端部42c,43cを熱に応じて容易に変位させることが可能になる。 (5) The filament struts 42 and 43 are configured to include a plurality of members B1 and B2 having different thermal expansion coefficients. Accordingly, the tip portions 42c and 43c can be easily displaced according to heat by the difference between the linear expansion coefficients of the members B1 and B2, that is, the thermal expansion coefficient.

 (6)電子銃10は、フィラメント12とカソード電極13との間の距離の変動を抑えて、電子ビームEBの出力を安定化する。従って、処理装置において、電子ビームEBを用いた処理、例えば、対象物の加熱を安定して行うことが可能となる。 (6) The electron gun 10 stabilizes the output of the electron beam EB by suppressing fluctuations in the distance between the filament 12 and the cathode electrode 13. Therefore, the processing apparatus can stably perform processing using the electron beam EB, for example, heating of the object.

 尚、上記実施の形態は一例を示すものであり、各部材の形状等は、適宜変更されてもよい。変更例の一部を以下に示す。
 ・上記実施の形態では、フィラメント12を支持する支持部材をフィラメント支柱42,43のような「柱」の形状としたが、この「柱」の形状は、円柱状、角柱状、あるいはその他の形状でもよい。つまり「支持部材」の形状は、図2,図4に示されるようなフィラメント支柱42,43に限定されない。
In addition, the said embodiment shows an example and the shape of each member etc. may be changed suitably. Some of the changes are shown below.
In the above embodiment, the support member that supports the filament 12 is formed in the shape of a “column” such as the filament columns 42 and 43. The shape of the “column” may be a columnar shape, a prismatic shape, or other shapes. But you can. That is, the shape of the “support member” is not limited to the filament struts 42 and 43 as shown in FIGS.

 ・上記実施の形態では、支持部42b,43bの各々を2つの部材B1,B2により構成したが、各支持部42b,43bに加えて各先端部42c,43cも2つの部材B1,B2により構成してもよい。また、各フィラメント支柱42,43全体を2つの部材B1,B2により構成してもよい。 In the above embodiment, each of the support portions 42b and 43b is configured by the two members B1 and B2. However, in addition to the support portions 42b and 43b, the tip portions 42c and 43c are also configured by the two members B1 and B2. May be. Moreover, you may comprise each filament support | pillar 42 and 43 whole by the two members B1 and B2.

 ・上記実施形態では、各フィラメント支柱42,43の部材B1,B2を、モリブデン(Mo)とタンタル(Ta)とした。しかしながら部材B1と部材B2の組合せは上記実施形態に限定されるものではなく、線膨張係数の差によってフィラメントの伸びを吸収できればよく、例えば部材B1をタングステン(W)とし、部材B2をモリブデンとしてもよく、または部材B1をタングステンとし、部材B2をタンタルとしてもよい。すなわち、2つの部材B1,B2の組み合わせは、各フィラメント支柱42,43の外側に位置する第1の部材B1の線膨張係数(熱膨張係数)が、各フィラメント支柱42,43の内側に位置する第2の部材B2のそれよりも小さいものとなるように選択されればよい。 In the above embodiment, the members B1 and B2 of the filament struts 42 and 43 are molybdenum (Mo) and tantalum (Ta). However, the combination of the member B1 and the member B2 is not limited to the above embodiment, and it is sufficient that the elongation of the filament can be absorbed by the difference in the linear expansion coefficient. For example, the member B1 may be tungsten (W) and the member B2 may be molybdenum. Alternatively, the member B1 may be tungsten and the member B2 may be tantalum. That is, in the combination of the two members B1 and B2, the linear expansion coefficient (thermal expansion coefficient) of the first member B1 located outside the filament struts 42 and 43 is located inside the filament struts 42 and 43. What is necessary is just to select so that it may become smaller than that of 2nd member B2.

 また、部材B1,B2の厚さや長さは、フィラメント12の熱膨張による変形量に対応して各フィラメント支柱42,43の先端を変位させるように設定されればよい。
 ・上記実施形態の電子銃10の構成を適宜変更してもよい。例えば、図10に示すように、2つの集束コイル61,62と2つのフローレジスタ63,64を備えた、所謂2段集束型の電子銃60に本発明を具体化してもよい。
The thicknesses and lengths of the members B1 and B2 may be set so that the tips of the filament struts 42 and 43 are displaced corresponding to the deformation amount of the filament 12 due to thermal expansion.
-You may change suitably the structure of the electron gun 10 of the said embodiment. For example, as shown in FIG. 10, the present invention may be embodied in a so-called two-stage focusing electron gun 60 including two focusing coils 61 and 62 and two flow registers 63 and 64.

 ・上記実施形態のフィラメント12の形状、加工方法等を適宜変更しても良い。例えば、図11に示すように、断面円形の線材を用いたフィラメント71を用いてもよい。
 ・上記実施形態ではフィラメント制御による例を示したが、カソード制御にて出力を制御する装置に本発明を具体化してもよい。
-You may change suitably the shape, the processing method, etc. of the filament 12 of the said embodiment. For example, as shown in FIG. 11, a filament 71 using a wire having a circular cross section may be used.
-Although the example by filament control was shown in the said embodiment, you may actualize this invention to the apparatus which controls an output by cathode control.

Claims (10)

 カソード電極を熱電子により加熱するために通電されるフィラメントを支持する支持方法であって、
 支持部材により前記フィラメントを支持することであって、通電により発生する前記フィラメントの伸びに応じて前記支持部材の先端を変位させるように前記フィラメントを支持すること、
を備えることを特徴とするフィラメントの支持方法。
A support method for supporting a filament that is energized to heat a cathode electrode by thermoelectrons,
Supporting the filament by a support member, and supporting the filament so as to displace the tip of the support member according to the elongation of the filament generated by energization;
A method for supporting a filament, comprising:
 前記支持部材は支柱であり、
 前記フィラメントに対する通電中の熱に応じて、前記支柱の先端が変位する、
ことを特徴とする請求項1に記載のフィラメントの支持方法。
The support member is a support;
Depending on the heat during energization of the filament, the tip of the column is displaced,
The method for supporting a filament according to claim 1.
 電子銃であって、
 カソード電極と、
 前記カソード電極を熱電子により加熱するために通電されるフィラメントと、
 前記フィラメントを支持する2つの支柱であって、前記フィラメントが取着される先端と、ベースに固定される基端とを各々有する2つの支柱と、
を備え、
 前記各支柱は、通電により前記フィラメントに発生する伸びに応じて、それぞれの前記先端を変位させることを特徴とする電子銃。
An electron gun,
A cathode electrode;
A filament that is energized to heat the cathode electrode with thermoelectrons;
Two struts for supporting the filament, two struts each having a distal end to which the filament is attached and a proximal end fixed to the base;
With
The electron gun according to claim 1, wherein each of the columns displaces the tip according to elongation generated in the filament by energization.
 前記各支柱は、前記フィラメントに対する通電中の熱に応じて、それぞれの前記先端を変位させる、
ことを特徴とする請求項3に記載の電子銃。
Each of the columns displaces the tip according to heat during energization of the filament.
The electron gun according to claim 3.
 前記各支柱は、前記フィラメントの伸びに応じて、それぞれの前記先端を前記フィラメントの伸びの方向に沿って変位させるように構成された、
ことを特徴とする請求項3又は4に記載の電子銃。
Each of the columns is configured to displace the tip of each of the filaments along the direction of the filament extension in accordance with the elongation of the filament.
The electron gun according to claim 3 or 4, wherein
 前記各支柱は、前記フィラメントの伸びに応じて、該2つの支柱の先端が互いに逆方向に変位するように構成された、
ことを特徴とする請求項3~5のうちの何れか一項に記載の電子銃。
Each of the struts is configured such that the ends of the two struts are displaced in opposite directions according to the elongation of the filament.
The electron gun according to any one of claims 3 to 5, characterized in that:
 前記各支柱は、互いに異なる熱膨張係数を有する複数の部材を含んで構成されることを特徴とする請求項3~6のうちの何れか一項に記載の電子銃。 The electron gun according to any one of claims 3 to 6, wherein each of the support columns includes a plurality of members having different thermal expansion coefficients.  前記各支柱は、第1の側部と、該第1の側部と反対側の第2の側部とを有し、前記2つの支柱が前記ベースに固定された状態で、該2つの支柱の第2の側部は互いに対向しており、
 前記各支柱は、前記第1の側部に配置され、第1の熱膨張係数を有する第1の部材と、前記第2の側部に配置され、前記第1の熱膨張係数よりも大きな第2の熱膨張係数を有する第2の部材とにより構成されていることを特徴とする請求項3~6のうちの何れか一項に記載の電子銃。
Each of the columns has a first side and a second side opposite to the first side, and the two columns are fixed to the base. The second sides of each other face each other,
Each strut is disposed on the first side and has a first member having a first coefficient of thermal expansion and a second member disposed on the second side and larger than the first coefficient of thermal expansion. 7. The electron gun according to claim 3, comprising a second member having a thermal expansion coefficient of 2.
 前記各支柱は、
 前記基端を前記ベースに固定する固定部と、
 前記固定部から延びる支持部と、
 前記支持部の先端に形成されて前記フィラメントが取着される先端部とを含み、前記支持部が前記第1の部材と前記第2の部材とにより構成されていることを特徴とする請求項8に記載の電子銃。
Each post is
A fixing portion for fixing the base end to the base;
A support portion extending from the fixed portion;
And a tip portion to which the filament is attached, wherein the support portion is constituted by the first member and the second member. 9. The electron gun according to 8.
 請求項3~7のうちの何れか一項に記載の電子銃を備えた処理装置。 A processing apparatus comprising the electron gun according to any one of claims 3 to 7.
PCT/JP2010/071386 2009-12-04 2010-11-30 Filament supporting method, electron gun, and processing apparatus Ceased WO2011068101A1 (en)

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