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WO2011055623A1 - Lentille de prise d'image, dispositif de prise d'image, et procédé de fabrication d'appareil électronique - Google Patents

Lentille de prise d'image, dispositif de prise d'image, et procédé de fabrication d'appareil électronique Download PDF

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Publication number
WO2011055623A1
WO2011055623A1 PCT/JP2010/068141 JP2010068141W WO2011055623A1 WO 2011055623 A1 WO2011055623 A1 WO 2011055623A1 JP 2010068141 W JP2010068141 W JP 2010068141W WO 2011055623 A1 WO2011055623 A1 WO 2011055623A1
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Prior art keywords
lens
resin
imaging
inorganic particles
glass substrate
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PCT/JP2010/068141
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English (en)
Japanese (ja)
Inventor
明子 原
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Konica Minolta Opto Inc
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Konica Minolta Opto Inc
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Publication of WO2011055623A1 publication Critical patent/WO2011055623A1/fr
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/0018—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 with means for preventing ghost images
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings

Definitions

  • the present invention relates to an imaging lens, an imaging device, and an electronic device manufacturing method.
  • an imaging device called a camera module has been mounted on a portable terminal which is a compact and thin electronic device such as a mobile phone or a PDA (Personal Digital Assistant).
  • image information can be transmitted mutually.
  • CMOS Complementary Metal Oxide Semiconductor
  • An imaging apparatus is configured by combining such an imaging element and an imaging lens.
  • a reflow soldering process is employed as a method for mounting an imaging device on which an imaging lens is mounted on a printed wiring board.
  • solder is placed in advance on the printed circuit board where electronic components are to be placed, the electronic components are placed thereon, heated to melt the solder, and then cooled to cool the electronic components. It mounts on a printed wiring board (for example, refer patent document 1).
  • Electronic components are automatically mounted inside the furnace for the reflow process.
  • One of the manufacturing methods for imaging lenses with mass productivity, miniaturization, and high heat resistance is that a large number of lens parts made of high heat-resistant curable resin are simultaneously formed on a parallel plate of several inches of glass substrate.
  • a method has been proposed in which a large number of lens elements are simultaneously molded using a replica method, a glass substrate (wafer lens) on which a large number of these lens elements are formed is combined with a sensor wafer and then separated to mass-produce camera modules.
  • a wafer lens having lens portions provided on both surfaces of at least two glass substrates is used as an imaging lens.
  • the lens unit provided closest to the object side is a lens unit having positive power
  • the second or third lens unit viewed from the object side is negative.
  • Excellent focusing performance and chromatic aberration correction by making the lens part with power different from the Abbe number of the object side lens part with positive power and the second or third lens part with negative power Can have a function.
  • reflected light is generated at the interface between the lens unit and the air layer or at the interface between the imaging element and the air layer.
  • the first lens portion, the second lens portion, the third lens portion, and the fourth lens portion are formed from the object side.
  • reflected light is generated on the optical surfaces and imaging device surfaces of the first lens unit and the third lens unit, respectively.
  • the reflected light generated on the surface of the first lens unit does not enter the image sensor, the reflected light generated on the surface of the third lens unit hardly affects the image, and the second lens is again used. Although it is reflected by the light and emitted in the image side direction (image pickup device direction), it does not directly enter the image pickup device, so the influence is slight.
  • the reflected light generated on the surface of the image sensor is reflected on the surface of the fourth lens part and is incident on the surface of the image sensor again, thereby forming a ghost and increasing the influence on the image.
  • the antireflection film is usually formed by laminating an inorganic layer such as a metal oxide layer, and since the coefficient of linear expansion is significantly different from that of the resin used as the base material, high-temperature heat treatment such as reflow soldering treatment.
  • high-temperature heat treatment such as reflow soldering treatment
  • the optical performance deteriorates due to the problem that cracks or wrinkles occur in the antireflection film, it is difficult to form the antireflection film on the resin lens portion.
  • adjusting the deposition temperature of the antireflection film as in the technique of Patent Document 2 is not sufficient to suppress the occurrence of cracks.
  • the lens part of the lens may expand and contract, and wrinkles may occur in the antireflection film.
  • the main object of the present invention is to suppress the occurrence of ghosts due to reflected light on the surface of the image sensor, and to reflect even when exposed to high heat such as reflow soldering processing or due to temperature fluctuations during use.
  • An object of the present invention is to provide an imaging lens capable of preventing optical performance from being deteriorated due to cracks and wrinkles in a prevention film.
  • a second lens group that is disposed on the image side surface of the second glass substrate and has a resin-made fourth lens portion that forms the S4 surface that is an image side optical surface is disposed in this order from the object side to the image side.
  • the antireflection film is provided on the S4 surface, that is, the optical surface of the fourth lens unit, the reflected light reflected by the surface of the imaging element is transmitted to the object side through the S4 surface, It is possible to suppress the generation of ghosts that are generated by entering the image sensor again.
  • the inorganic particles generally have a lower linear expansion coefficient than the resin material, and reduce the difference in the linear expansion coefficient from the antireflection film. Therefore, even when the imaging lens is placed in a high temperature environment by the reflow soldering process, the occurrence of cracks and wrinkles in the antireflection film can be prevented.
  • the imaging device 1 includes an imaging lens 2, an optical low-pass filter 4, an imaging element 6, and the like, and the optical low-pass filter 4 and the imaging element 6 are disposed below the imaging lens 2. ing.
  • a CMOS type image sensor is used as the image sensor 6.
  • the imaging lens 2 is composed of two lens groups 8 and 10.
  • the first lens group 8 has a glass substrate 12.
  • a resin portion 16 is formed on the upper surface of the glass substrate 12.
  • a diaphragm 18 is formed between the glass substrate 12 and the resin portion 16.
  • the resin portion 16 is composed of a convex lens portion 16a and a non-lens portion 16b at the periphery thereof, and these are integrally molded.
  • the convex lens portion 16a has an aspheric surface and has a positive refractive power.
  • the diaphragm 18 is covered with a non-lens portion 16b.
  • a resin portion 22 is formed on the lower surface of the glass substrate 12.
  • the resin portion 22 is composed of a concave lens portion 22a and a non-lens portion 22b in the periphery thereof, and these are integrally molded.
  • the concave lens portion 22a has an aspherical surface and has negative refractive power (power).
  • the first lens group 8 is composed of a glass substrate 12, resin portions 16 and 22, and a diaphragm 18, and has a positive refractive power as a whole.
  • the second lens group 10 has a glass substrate 30.
  • a resin portion 32 is formed on the upper surface of the glass substrate 30.
  • the resin portion 32 is composed of a concave lens portion 32a and a non-lens portion 32b in the periphery thereof, and these are integrally molded.
  • the concave lens portion 32a has an aspheric surface, and has negative refractive power.
  • a resin portion 34 is formed on the lower surface of the glass substrate 30.
  • the resin portion 34 is composed of a convex lens portion 34a and a non-lens portion 34b in the periphery thereof, and these are integrally molded.
  • the convex lens portion 34a has an aspheric surface and has a positive refractive power.
  • the second lens group 10 includes a glass substrate 30 and resin portions 32 and 34, and has a negative refractive power (power) as a whole.
  • the second lens unit and the third lens unit have negative power, but at least one lens unit may have negative power.
  • the resin parts 16 and 22 of the first lens group 8 and the resin parts 32 and 34 of the second lens group 10 are made of a known photocurable resin.
  • the photocurable resin for example, acrylic resins, allyl ester resins, epoxy resins and the like as shown below can be used.
  • acrylic resin or allyl ester resin When acrylic resin or allyl ester resin is used, it can be cured by reaction by radical polymerization, and when epoxy resin is used, it can be cured by reaction by cationic polymerization.
  • the types of resins constituting each part of the first and second lens groups 8 and 10 may be the same or different. Details of the resin are as follows (1) to (3).
  • the (meth) acrylate used for the polymerization reaction is not particularly limited, and the following (meth) acrylate produced by a general production method can be used. Ester (meth) acrylate, urethane (meth) acrylate, epoxy (meth) acrylate, ether (meth) acrylate, alkyl (meth) acrylate, alkylene (meth) acrylate, (meth) acrylate having an aromatic ring, alicyclic structure The (meth) acrylate which has is mentioned. One or more of these can be used.
  • (Meth) acrylate having an alicyclic structure is particularly preferable, and may be an alicyclic structure containing an oxygen atom or a nitrogen atom.
  • 2-alkyl-2-adamantyl (meth) acrylate Japanese Patent Laid-Open No. 2002-193883
  • adamantyl di (meth) acrylate Japanese Patent Laid-Open No. 57-5000785
  • diallyl adamantyl dicarboxylate Japanese Patent Laid-Open No. 60-60
  • perfluoroadamantyl acrylate JP 2004-123687
  • (meth) acrylate for example, methyl acrylate, methyl methacrylate, n-butyl acrylate, n-butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, isobutyl acrylate, isobutyl methacrylate, tert-butyl acrylate Tert-butyl methacrylate, phenyl acrylate, phenyl methacrylate, benzyl acrylate, benzyl methacrylate, cyclohexyl acrylate, cyclohexyl methacrylate, and the like.
  • polyfunctional (meth) acrylate examples include trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol penta (meth) ) Acrylate, dipentaerythritol tetra (meth) acrylate, dipentaerythritol tri (meth) acrylate, tripentaerythritol octa (meth) acrylate, tripentaerythritol septa (meth) acrylate, tripentaerythritol hexa (meth) acrylate, tripenta Erythritol penta (meth) acrylate, tripentaerythritol tetra (meth) acrylate, tripent
  • Allyl ester resin A resin having an allyl group and cured by radical polymerization. Examples thereof include the following, but are not particularly limited to the following.
  • Epoxy resin is not particularly limited as long as it has an epoxy group and is polymerized and cured by light or heat, and an acid anhydride, a cation generator, or the like can be used as a curing initiator.
  • Epoxy resin is preferable in that it has a low cure shrinkage and can be a lens with excellent molding accuracy.
  • Examples of the epoxy include novolak phenol type epoxy resin, biphenyl type epoxy resin, and dicyclopentadiene type epoxy resin.
  • Examples include bisphenol F diglycidyl ether, bisphenol A diglycidyl ether, 2,2′-bis (4-glycidyloxycyclohexyl) propane, 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, vinyl Cyclohexene dioxide, 2- (3,4-epoxycyclohexyl) -5,5-spiro- (3,4-epoxycyclohexane) -1,3-dioxane, bis (3,4-epoxycyclohexyl) adipate, 1,2 -Cyclopropanedicarboxylic acid bisglycidyl ester and the like.
  • the curing agent is used for constituting the curable resin material and is not particularly limited. Moreover, in this invention, when comparing the transmittance
  • an acid anhydride curing agent, a phenol curing agent, or the like can be preferably used.
  • acid anhydride curing agents include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydrophthalic anhydride
  • acid anhydride curing agents include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, 3-methyl-hexahydrophthalic anhydride, 4-methyl-hexahydrophthalic anhydride
  • examples thereof include an acid, a mixture of 3-methyl-hexahydrophthalic anhydride and 4-methyl-hexahydrophthalic anhydride, tetrahydrophthalic anhydride, nadic anhydride, and methyl nadic anhydride.
  • a curing accelerator is contained as necessary.
  • the curing accelerator is not particularly limited as long as it has good curability, is not colored, and does not impair the transparency of the thermosetting resin.
  • 2-ethyl-4-methylimidazole is not limited. Imidazoles such as (2E4MZ), tertiary amines, quaternary ammonium salts, bicyclic amidines such as diazabicycloundecene and their derivatives, phosphines, phosphonium salts, etc. can be used, Two or more kinds may be mixed and used.
  • an adhesive is applied between the non-lens portion 22 b of the first lens group 8 and the non-lens portion 32 b of the second lens group 10, and the first lens group 8 and the second lens group 10 are connected. It is glued.
  • the non-lens portions 22b and 32b correspond to the flange portions of the concave lens portions 22a and 32a.
  • the non-lens portion 22b and the non-lens portion 32b are directly bonded via an adhesive, but a separate spacer is provided between the resin portion 22 and the resin portion 32, and the spacer You may adhere
  • the convex lens portion 16a, the concave lens portion 22a, the concave lens portion 32a, and the convex lens portion 34a have aspherical surfaces, and the optical axes coincide with each other.
  • the convex lens portion 16a of the first lens group 8 is disposed on the object side
  • the convex lens portion 34a of the second lens group 10 is disposed on the image side.
  • the convex lens portion 16a (first lens portion) is the “S1 surface” that is the object-side optical surface of the first lens group 8, and the concave lens portion 22a (second lens portion) is the first lens.
  • the “S2 surface” that is the image side optical surface of the group 8 is used, and the “S3 surface” that is the object side optical surface of the second lens group 10 is the “S3 surface” that is the concave lens portion 32a (the fourth lens). Part) constitutes the “S4 surface” which is the image side optical surface of the second lens group 10.
  • a light-shielding photoresist is applied to the glass substrate 12 and patterned into a predetermined shape to form a plurality of apertures 18.
  • a photoresist mixed with carbon black can be used as the light shielding photoresist.
  • a photocurable resin is dropped on the mold, and one of the mold and the wafer-shaped glass substrate 12 is pressed against the other to fill the space between the mold and the glass substrate 12 with the photocurable resin.
  • the photocurable resin is cured by light irradiation. As a result, a plurality of convex lens portions 16a are formed on the glass substrate 12.
  • the glass substrate 12 is turned over, and a plurality of concave lens portions 22a are formed on the glass substrate 12 in the same manner as described above.
  • IR cut coats 14 and 20 When forming the IR cut coats 14 and 20, before forming the aperture 18, a known vacuum deposition method, sputtering, CVD (Chemical Vapor Deposition) method or the like is used for each of the front and back surfaces of the glass substrate 12. IR cut coats 14 and 20 are formed (see FIG. 2).
  • a plurality of concave lens portions 32a and convex lens portions 34a are formed on the glass substrate 30 in the same manner as the plurality of convex lens portions 16a and concave lens portions 22a are formed on the glass substrate 12.
  • a photocurable resin containing inorganic particles is used.
  • an antireflection film 36 is formed on the resin portion 34.
  • the second lens group 10 (second lens group 10 without the antireflection film 36) is mounted in the vacuum deposition apparatus, and the pressure in the apparatus is reduced to a predetermined pressure (for example, 2 ⁇ 10 ⁇ 3 Pa), The second lens group 10 is heated by a heater at the upper part of the vacuum evaporation apparatus until the temperature reaches a predetermined temperature (for example, 240 ° C.).
  • the first layer 36a is formed by using a vapor deposition source constituting the first layer 36a.
  • the film forming temperature is preferably kept within a range of ⁇ 40 to + 40 ° C. with respect to the melting temperature of the conductive paste to be melted by the reflow process.
  • a (Ta 2 O 5 + 5% TiO 2 ) film is formed as the first layer 36a
  • OA600 manufactured by Optran Co., Ltd. may be used as the evaporation source, and the evaporation source may be evaporated by electron gun heating.
  • O 2 gas up to a pressure of 1.0 ⁇ 10 ⁇ 2 Pa inside the vacuum vapor deposition apparatus and controlling the vapor deposition rate at 5 ⁇ / sec.
  • the film forming temperature (temperature in the vapor deposition apparatus) is maintained within the range of 200 to 280 ° C.
  • the second layer 36b is formed using a vapor deposition source constituting the second layer 36b.
  • the film forming temperature is kept within the range of ⁇ 40 to + 40 ° C. with respect to the melting temperature of the conductive paste to be melted by the reflow process. .
  • the film forming temperature (temperature in the vapor deposition apparatus) is maintained within the range of 200 to 280 ° C.
  • a set of convex lens portion 16a, concave lens portion 22a, concave lens portion 32a, and convex lens portion 34a is taken as a unit, and wafer lens laminate 50 is diced for each set. Cut (dicing) at line 60 and fragment. As a result, a plurality of imaging lenses 2 are manufactured.
  • a dicer that uses an endless blade (rotary blade) by cutting with abrasive grains, and the rotation speed of the endless blade is 3 to 7 mm / sec. .
  • the dicing portion is preferably cut while flowing pure water for dust prevention (jetting).
  • the imaging lens 2 is assembled and bonded to the casing (not shown), and the optical low-pass filter 4 and the imaging element 6 are installed, whereby the imaging device 1 is manufactured.
  • the optical low-pass filter 4 and the image sensor 6 are installed after the imaging lens 2 is manufactured by dicing.
  • the wafer lens stack 50 and the plurality of image sensors 6 are provided. It is also possible to obtain the imaging device 1 by dicing after stacking the substrates.
  • solder is placed on the printed wiring board in advance, and the imaging device 1 and the electronic component are placed there.
  • the solder is melted and then cooled, so that the imaging device 1 and the electronic component can be simultaneously mounted on the printed wiring board.
  • an antireflection film 36 is formed on the surface of the resin portion 34.
  • the antireflection film 36 is provided only on the surface of the resin portion 34, but may be provided on all surfaces of the resin portions 16, 22, 32, 34.
  • the antireflection film 36 is effectively provided on the surface of the resin portion 34 in order to suppress the occurrence of ghost in the image pickup device 6 which is one of the objects of the present invention, and the antireflection film 36 and the resin portion 34 are effective. It is preferable to provide the antireflection film 36 only on the resin part 34 containing inorganic particles in order to suppress problems such as the generation of cracks at the interface with the resin.
  • the antireflection film 36 has a two-layer structure. A first layer 36a is formed directly on the resin portion 34, and a second layer 36b is formed thereon.
  • the first layer 36a is a layer made of a high refractive index material having a refractive index of 1.7 or more, and is preferably a mixture of Ta 2 O 5 , Ta 2 O 5 and TiO 2 , ZrO 2 , ZrO 2 and TiO 2. And is composed of any mixture.
  • the first layer 36a may be composed of TiO 2 , Nb 2 O 3 , and HfO 2 .
  • the second layer 36b is a layer comprised of a low refractive index material is less than the refractive index of 1.7, preferably composed of SiO 2.
  • the antireflection film 36 has both the first layer 36a and the second layer 36b formed by a technique such as vapor deposition.
  • the film formation temperatures of the first layer 36a and the second layer 36b are subjected to a reflow process. It is formed while being kept in the range of ⁇ 40 to + 40 ° C. (preferably ⁇ 20 to + 20 ° C.) with respect to the melting temperature of the conductive paste such as solder.
  • the first layer 36a and the second layer 36b may be alternately stacked on the first layer 36a and the second layer 36b, and the antireflection film 36 may have a 2-7 layer structure as a whole.
  • the layer in direct contact with the resin portion 34 may be a high refractive index material layer (first layer 36a) or a low refractive index material layer (second layer 36b) depending on the type of resin. Good.
  • the layer in direct contact with the resin portion 34 is a layer of a high refractive index material.
  • a photocurable resin containing inorganic particles is used in the resin portion 34 closest to the image side.
  • Inorganic particles may be contained not only in the resin part 34 but also in the resin parts 16, 22, 32. However, it is preferable to include inorganic particles only in the resin parts 22, 32, 34, more preferably to include inorganic particles only in the resin parts 32, 34, and most preferable to include inorganic particles only in the resin part 34. preferable.
  • the reason is as follows. That is, as described above, when the imaging lens 2 is manufactured, the wafer lens stack 50 needs to be cut by dicing. During dicing, dust is generated in the vicinity of the cut portion, and therefore it is preferable to cut while flowing pure water for dust prevention. At that time, if the resin parts 16, 22, 32, and 34 contain inorganic particles, the water absorption may increase due to the inorganic particles.
  • dicing may be performed in a state of being bonded to the imaging element (group) in the state of the wafer lens stack 50, and therefore dicing is performed from the object side (resin portion 16 side).
  • the resin part on the object side is exposed to pure water for a longer time.
  • a resin containing inorganic particles is exposed to pure water for a long time, expansion due to water absorption occurs, and problems such as peeling from the glass substrates 12 and 30 may occur. It is preferable to use a resin that does not contain inorganic particles in the resin portion.
  • the toughness may be decreased and brittleness may be increased, and it is easy to break in the course of the dicing process. .
  • the resin portions 22 and 32 are preferably concave lenses.
  • the non-lens portions are thicker than the lens portions (concave lens portions 22a and 32a). There is a high possibility that it will continue to be received for a long time, and it will be easier to break.
  • a resin containing inorganic particles only in the resin portion 34. Since at least the resin portion 34 is provided with an antireflection film 36 in order to suppress the occurrence of ghost caused by the reflected light entering the image sensor 6, cracks due to stress between the antireflection film and the resin portion are generated. In order to suppress, the resin part 34 needs to use resin containing inorganic particles.
  • the resin part 34 arranged closest to the image among the resin parts 16, 22, 32, 34 of the imaging lens 1 contains inorganic particles, the resin part 34.
  • the inorganic particles that can be contained / dispersed in the resin parts 16, 22, 32, and 34 are optically transparent (having optical transparency), such as oxide particles, sulfide particles, and selenide particles. And telluride particles.
  • silicon oxide particles aluminum oxide particles, aluminum phosphate particles, titanium oxide particles, zinc oxide particles, zinc sulfide particles, etc. can be mentioned, preferably silicon oxide particles (silica particles), carbonic acid Calcium particles.
  • silicon oxide particles silicon oxide particles (silica particles), carbonic acid Calcium particles.
  • one kind of inorganic particles may be used, or a plurality of kinds of inorganic particles may be used in combination.
  • the mixing ratio of inorganic particles to the photocurable resin (volume ratio of inorganic particles in the composite material) is 1 to 50% by volume, preferably 10 to 40% by volume, more preferably 20 to 30% by volume. .
  • the shape of the inorganic particles may be any shape such as a spherical shape, an elliptical shape, a flat shape, or a rod shape, but the lens function can be effectively exhibited particularly when it is spherical.
  • the particle size distribution is not particularly limited, but in order to exhibit the lens function more efficiently, those having a relatively narrow distribution are preferably used rather than those having a wide distribution.
  • Inorganic particles having an average particle diameter of 1 to 30 nm are used.
  • the inorganic particles preferably have an average particle diameter of 1 to 20 nm, more preferably 1 to 10 nm. If the average particle size is less than 1 nm, it may be difficult to disperse the inorganic particles, so that the desired performance may not be obtained. If the average particle size exceeds 30 nm, the resulting composite material becomes turbid and transparent.
  • the light transmittance may be less than 70%.
  • the average particle diameter of the inorganic particles represents the diameter when the volume of the inorganic particles is converted into a sphere.
  • 100 or more particles of an electron micrograph of inorganic particles are selected indiscriminately, and the arithmetic average of the particle sizes of the individual inorganic particles is defined as the average particle size.
  • the method for producing the inorganic particles is not particularly limited, and any known method can be used.
  • methods such as thermal decomposition of metal salts and hydrolysis of metal salts and metal alkoxides are well known.
  • the thermal decomposition of the metal salt can be obtained by spraying the metal salt or a solution thereof and thermally decomposing it.
  • the hydrolysis of the metal salt or metal alkoxide can be obtained by preparing a metal salt or metal alkoxide solution in advance and adding water to the solution to advance hydrolysis polymerization.
  • the surface of inorganic particles is preferably surface-treated.
  • the method for surface treatment is not particularly limited, and any known method can be used.
  • Examples of the surface treatment agent used for the surface treatment of inorganic particles include tetramethoxysilane, tetraethoxysilane, tetraisopropoxysilane, tetraphenoxysilane, methyltrimethoxysilane, ethyltrimethoxysilane, propyltrimethoxysilane, and methyltriethoxy.
  • Silane methyltriphenoxysilane, ethyltriethoxysilane, phenyltrimethoxysilane, 3-methylphenyltrimethoxysilane, dimethyldimethoxysilane, diethyldiethoxysilane, diphenyldimethoxysilane, diphenyldiphenoxysilane, trimethylmethoxysilane, triethylethoxysilane , Triphenylmethoxysilane, triphenylphenoxysilane, cyclopentyltrimethoxysilane, cyclohexyltriethoxysilane, Dildimethylethoxysilane, octyltriethoxysilane, vinyltriacetoxysilane, vinyltrichlorosilane, vinyltriethoxysilane, ⁇ -chloropropyltrimethoxysilane, ⁇ -chloropropylmethyldichlorosilane, ⁇
  • fatty acids such as isostearic acid, stearic acid, cyclopropane carboxylic acid, cyclohexane carboxylic acid, cyclopentane carboxylic acid, cyclohexane propionic acid, octylic acid, palmitic acid, behenic acid, undecylenic acid, oleic acid, hexahydrophthalic acid and the like
  • Any surface treatment agent such as a metal salt of the above, or an organic phosphate surface treatment agent can be used, and these can be used alone or in admixture of two or more.
  • These compounds have different characteristics such as reaction rate, and compounds suitable for surface treatment conditions can be used. Further, only one type may be used or a plurality of types may be used in combination. Furthermore, the properties of the surface-treated fine particles obtained may vary depending on the compound used, and the affinity with the photocurable resin used to obtain the composite material can be achieved by selecting the compound used for the surface treatment. is there.
  • the ratio of the surface treatment agent is not particularly limited, but is preferably 10 to 99% by mass, more preferably 30 to 98% by mass with respect to the inorganic particles after the surface treatment.
  • the organic-inorganic composite material may be prepared (produced) as follows.
  • the organic-inorganic composite material may be prepared by adding and kneading inorganic particles to the molten photocurable resin, or after mixing the photocurable resin and inorganic particles dissolved in a solvent. It may be produced by removing the organic solvent.
  • the organic-inorganic composite material is produced by a melt-kneading method.
  • a photocurable resin in the presence of inorganic particles or to produce inorganic particles in the presence of a photocurable resin
  • an organic-inorganic composite material can be prepared by mixing a photocurable resin or inorganic particles prepared by an existing method, it is usually possible to produce an inexpensive organic-inorganic composite material.
  • an organic solvent can be used in the melt kneading.
  • an organic solvent By using an organic solvent, the temperature of melt kneading can be lowered, and deterioration of the photocurable resin can be easily suppressed. In this case, it is preferable to devolatilize after melt-kneading to remove the organic solvent from the organic-inorganic composite material.
  • Examples of the apparatus that can be used for melt kneading include a closed kneading apparatus such as a lab plast mill, a Brabender, a Banbury mixer, a kneader, and a roll, or a batch kneading apparatus. Further, a continuous melt kneader such as a single screw extruder or a twin screw extruder can be used.
  • KRC kneader manufactured by Kurimoto Iron Works
  • polylab system manufactured by HAAKE
  • nanocon mixer Toyo Seiki Seisakusho
  • Kneader (Buss), TEM extruder (Toshiba Machine), TEX twin-screw kneader (Nihon Steel Works), PCM kneader (Ikegai Iron Works) ), Three roll mill, mixing roll mill, kneader (manufactured by Inoue Mfg.
  • the photocurable resin and the inorganic particles may be added and kneaded all at once, or may be added in stages and kneaded.
  • a melt-kneading apparatus such as an extruder, it is possible to add the components to be added step by step from the middle of the cylinder.
  • the inorganic particles can be added in a powder or agglomerated state, or can be added in a dispersed state in the liquid.
  • distributed in the liquid it is preferable to perform devolatilization after kneading
  • IR cut coats 14 and 20 may be formed on the glass substrate 12.
  • the IR cut coats 14 and 20 are films for shielding infrared rays.
  • the IR cut coat 14 is an alternating multilayer film in which a plurality of low refractive index layers 14a made of a low refractive index material and high refractive index layers 14b made of a high refractive index material are alternately stacked.
  • the IR cut coat 20 is also an alternating multilayer film of low refractive index layers 20a and high refractive index layers 20b. In the IR cut coats 14 and 20, the low refractive index layers 14 a and 20 a are preferably in direct contact with the glass substrate 12.
  • the low refractive index material constituting the low refractive index layers 14a and 20a SiO 2 or the like is used.
  • TiO 2 , Ta 2 O 5 , Nb 2 O 3 , ZrO 2 or the like is used as the high refractive index material constituting the high refractive index layers 14b and 20b.
  • the low refractive index layers 14a and 20a may be made of different materials, and the high refractive index layers 14b and 20b may be made of different materials.
  • the IR cut coats 14 and 20 are usually composed of about 10 to 40 layers, preferably 20 layers each. Either one of the IR cut coats 14 and 20 is sufficient, but since the glass substrate 12 may be bent under the stress of the IR cut coats 14 and 20, both IR cut coats 14 and 20 existed. Is preferred. The number of layers of the IR cut coats 14 and 20 may be the same or different.
  • f Focal length of the entire imaging lens system fB: Back focus
  • F F number 2Y: Diagonal length of the imaging surface of the solid-state imaging device
  • ENTP Entrance pupil position (distance from the first surface to the entrance pupil position)
  • EXTP exit pupil position (distance from imaging surface to exit pupil position)
  • H1 Front principal point position (distance from the first surface to the front principal point position)
  • H2 Rear principal point position (distance from the final surface to the rear principal point position)
  • R radius of curvature
  • D spacing between upper surfaces of axis
  • Nd refractive index of lens material with respect to d-line
  • ⁇ d Abbe number of lens material
  • the aspherical shape has the vertex of the surface as the origin and the optical axis direction as the X axis In the orthogonal coordinate system, the vertex curvature is C, the conic constant is K, and the aspherical coefficients are A4, A6, A8, A10, A12
  • This imaging lens is assumed to be used for an imaging element of 1/5 inch type, pixel pitch of 1.75 ⁇ m, and 1600 ⁇ 1200 pixels.
  • an epoxy resin (specifically, 4% by mass of UVI-6992 was added as a UV curing initiator to a hydrogenated bisphenol A type epoxy resin) was used.
  • Table 1 shows lens data of the imaging lens.
  • a power of 10 for example, 2.5 ⁇ 10 ⁇ 3
  • E for example, 2.5 ⁇ E-3
  • inorganic particles were variously contained in each resin portion, and “samples 1 to 5” were obtained by combinations thereof (see Table 2).
  • an antireflection film (Anti-Reflector-Coat) was formed on the most image-side convex lens portion constituting the S4 surface.
  • silica RX300 manufactured by Nippon Aerosil Co., Ltd., particle size: 7 nm
  • the amount of the inorganic particles added was 50% by mass with respect to the resin part.
  • the antireflection film As the antireflection film, a two-layer antireflection film was formed on the lens group on the image side (resin portion constituting the S4 surface).
  • the lens group was mounted in a vacuum deposition apparatus, the pressure in the apparatus was reduced to 2 ⁇ 10 ⁇ 3 Pa, and the lens group was heated to 200 ° C. by a heater at the top of the vacuum deposition apparatus.
  • a 20 nm (Ta 2 O 5 + 5% TiO 2 ) film was formed directly on the surface of the resin portion as the first layer film.
  • OA600 manufactured by Optran Co., Ltd. was used as the evaporation source, and the evaporation source was evaporated by electron gun heating to form a (Ta 2 O 5 + 5% TiO 2 ) film.
  • the O 2 gas was introduced until the pressure inside the vacuum vapor deposition apparatus reached 1.0 ⁇ 10 ⁇ 2 Pa, and the film was formed while controlling the vapor deposition rate at 5 liters / sec.
  • a 110 nm SiO 2 film was formed following the first layer film.
  • O 2 gas was introduced until the pressure inside the vacuum vapor deposition apparatus was 1.2 ⁇ 10 ⁇ 2 Pa, and the film was formed while controlling the vapor deposition rate at 5 ⁇ / sec.
  • each sample was introduced into an IR furnace and heated at 260 ° C. for 6 minutes as one cycle, and this was performed for 3 cycles.
  • a dicer using an endless blade (rotating blade) by cutting with abrasive grains was used, and the rotation speed of the endless blade was set to 3 to 7 mm / sec.
  • pure water was flowed around the endless blade to prevent frictional heat.
  • Table 2 shows the observation results after dicing.
  • the criteria for ⁇ , ⁇ , and X are as follows. “ ⁇ ”: The resin part is peeled off at less than 10% (100) lens parts. “ ⁇ ”: There is peeling of the resin part in the lens part in the range of 10% or more and less than 30% (300). “ ⁇ ”: There is peeling of the resin part in the lens part of 30% or more.
  • Imaging device 2 Imaging lens 4 Optical low-pass filter 6 Imaging element 8, 10 Lens group 12 Glass substrate 14 IR cut coat 14a Low refractive index layer 14b High refractive index layer 16 Resin part 16a Convex lens part 16b Non-lens part 18 Aperture 20 IR cut coat 20a Low refractive index layer 20b High refractive index layer 22 Resin part 22a Concave lens part 22b Non-lens part 30 Glass substrate 32 Resin part 32a Concave lens part 32b Non-lens part 34 Resin part 34a Convex lens part 34b Non-lens part 36 Antireflection film 36a First layer 36b Second layer 40 Spacer 42, 44 IR cut coat 50 Wafer lens laminate 60 Dicing line

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

L'invention concerne une lentille de prise d'image dans laquelle la formation de fentes et de rides dans un film anti-réfléchissant est éliminée, tandis que l'entrée de lumière réfléchie non nécessaire dans l'élément de prise d'image est supprimée, cette entrée de lumière réfléchie non nécessaire étant la cause de fantômes. La lentille de prise d'image (2) comprend les éléments suivants, dans l'ordre suivant depuis le côté objet vers le côté image : un premier groupe de lentilles (8) comprenant un substrat en verre (12), une section de lentille convexe en résine (16a) définissant la surface (S1), c'est-à-dire la surface optique côté objet, et une section de lentille concave en résine (22a) définissant la surface (S2), c'est à dire la surface optique côté image ; un second groupe de lentilles (10) comprenant un substrat en verre (30), une section de lentille concave en résine (32a) définissant la surface (S3), c'est-à-dire la surface optique côté objet, et une section de lentille convexe en résine (34a) définissant la surface (S4), c'est dire la surface optique côté image. Dans la lentille de prise d'image (2) le film anti-réfléchissant (36) est formé au moins sur la surface (S4), et la section de lentille concave (34a) au moins est faite d'une résine dans laquelle des particules minérales sont dispersées.
PCT/JP2010/068141 2009-11-09 2010-10-15 Lentille de prise d'image, dispositif de prise d'image, et procédé de fabrication d'appareil électronique Ceased WO2011055623A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102998775A (zh) * 2011-09-09 2013-03-27 杭州精工技研有限公司 摄像透镜

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JP2004088713A (ja) * 2002-06-27 2004-03-18 Olympus Corp 撮像レンズユニットおよび撮像装置
JP2008046526A (ja) * 2006-08-21 2008-02-28 Konica Minolta Opto Inc 撮像レンズ、撮像装置及び携帯端末
WO2008102648A1 (fr) * 2007-02-19 2008-08-28 Konica Minolta Opto, Inc. Lentille et dispositif d'imagerie, et terminal mobile
JP2009008775A (ja) * 2007-06-27 2009-01-15 Panasonic Corp 組みレンズ
WO2009069468A1 (fr) * 2007-11-26 2009-06-04 Konica Minolta Opto, Inc. Lentille de capture d'image et dispositif de capture d'image
WO2009116492A1 (fr) * 2008-03-21 2009-09-24 コニカミノルタオプト株式会社 Lentille d'imagerie, dispositif d'imagerie, instrument numérique et procédé de fabrication de la lentille d'imagerie

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004088713A (ja) * 2002-06-27 2004-03-18 Olympus Corp 撮像レンズユニットおよび撮像装置
JP2008046526A (ja) * 2006-08-21 2008-02-28 Konica Minolta Opto Inc 撮像レンズ、撮像装置及び携帯端末
WO2008102648A1 (fr) * 2007-02-19 2008-08-28 Konica Minolta Opto, Inc. Lentille et dispositif d'imagerie, et terminal mobile
JP2009008775A (ja) * 2007-06-27 2009-01-15 Panasonic Corp 組みレンズ
WO2009069468A1 (fr) * 2007-11-26 2009-06-04 Konica Minolta Opto, Inc. Lentille de capture d'image et dispositif de capture d'image
WO2009116492A1 (fr) * 2008-03-21 2009-09-24 コニカミノルタオプト株式会社 Lentille d'imagerie, dispositif d'imagerie, instrument numérique et procédé de fabrication de la lentille d'imagerie

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102998775A (zh) * 2011-09-09 2013-03-27 杭州精工技研有限公司 摄像透镜
JP2013254210A (ja) * 2011-09-09 2013-12-19 Seikoh Giken Co Ltd 撮像レンズ
US8861100B2 (en) 2011-09-09 2014-10-14 Seikoh Giken Co., Ltd. Imaging lens
JP2015038538A (ja) * 2011-09-09 2015-02-26 株式会社精工技研 撮像レンズ

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