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WO2011048656A1 - Procédé de rugosification de surface de substrat, et procédé de fabrication de dispositif photovoltaïque - Google Patents

Procédé de rugosification de surface de substrat, et procédé de fabrication de dispositif photovoltaïque Download PDF

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Publication number
WO2011048656A1
WO2011048656A1 PCT/JP2009/068028 JP2009068028W WO2011048656A1 WO 2011048656 A1 WO2011048656 A1 WO 2011048656A1 JP 2009068028 W JP2009068028 W JP 2009068028W WO 2011048656 A1 WO2011048656 A1 WO 2011048656A1
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Prior art keywords
substrate
roughening
etching
silicon
silicon substrate
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PCT/JP2009/068028
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English (en)
Japanese (ja)
Inventor
濱本　哲
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to PCT/JP2009/068028 priority Critical patent/WO2011048656A1/fr
Publication of WO2011048656A1 publication Critical patent/WO2011048656A1/fr
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a substrate roughening method and a photovoltaic device manufacturing method, and more particularly to a substrate roughening method and a photovoltaic device capable of efficiently forming an uneven shape on the surface of a silicon substrate.
  • an antireflection film is formed on the light receiving surface side of the solar cell substrate to reduce the reflectance itself, and (3) the solar cell substrate A combination of two methods of forming a concavo-convex shape as a textured structure on the surface and effectively reducing the reflectivity by allowing the light once reflected to strike another surface again.
  • Etching to form a concavo-convex shape on the surface of a crystalline silicon substrate is performed by adding an additive such as isopropyl alcohol (hereinafter abbreviated as IPA) to an aqueous alkali hydroxide solution to increase the etching rate anisotropy with respect to the silicon surface orientation.
  • IPA isopropyl alcohol
  • This is performed by a mechanism in which a plane orientation with a relatively low etching rate is revealed as etching progresses (for example, see Patent Document 1).
  • azimuth planes having a low etching rate do not begin to appear at the same time from the beginning of the dissolution reaction. That is, at the initial stage of etching, uniform “isotropic high melting” proceeds, and small “nuclei” surrounded by azimuth planes with a stochastic slow etching rate are formed. As the etching progresses, the etching of the azimuth plane having a low etching rate progresses to grow the “nucleus”, and the “nucleus” overlaps with each other in a complex manner to finally form the uneven shape.
  • the azimuth plane with a slow etching rate is the (111) plane which is the most dense surface.
  • the “nucleus” portion shows a quadrangular pyramid shape like a pyramid. For this reason, there exists a tendency for the favorable uneven
  • an increase in the total etching amount leads to a decrease in the thickness of the silicon substrate and an increase in work materials and costs.
  • the present invention has been made in view of the above, and a substrate roughening method capable of efficiently forming a good uneven shape on the surface of the silicon substrate without damaging the silicon substrate, and The object is to obtain a photovoltaic device.
  • a method for roughening a substrate according to the present invention is a method for forming a texture structure on the surface of a silicon substrate by subjecting the silicon substrate to a surface treatment.
  • a mixed solution of an alkali hydroxide aqueous solution and an alcohol is used as an etching solution in an environment where the saturated vapor pressure of the alcohol is 200 mmHg or more and 600 mmHg or less with respect to the surface of the silicon-based substrate. It includes an unevenness forming step of forming fine unevenness on the surface of the silicon-based substrate by performing etching under a condition where the temperature of the etching solution is 55 ° C. or higher and 75 ° C. or lower.
  • the present invention it is possible to efficiently form a good concavo-convex shape on the surface of the silicon substrate without damaging the silicon substrate, with low environmental load and at low cost.
  • FIG. 1-1 is a cross-sectional view illustrating a schematic configuration of the solar battery cell according to the first embodiment of the present invention.
  • FIGS. 1-2 is principal part sectional drawing explaining the texture structure by the side of the light-receiving surface of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIG. 1-3 is a top view showing a schematic configuration of the solar battery cell according to the first embodiment of the present invention.
  • 1-4 is a bottom view showing a schematic configuration of the solar battery cell according to the first embodiment of the present invention.
  • FIG. FIGS. 2-1 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 2-5 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 2-6 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 2-5 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIGS. 2-6 is sectional drawing for demonstrating the manufacturing process of the photovoltaic cell concerning Embodiment 1 of this invention.
  • FIGS. FIG. 3 is a characteristic diagram showing the temperature dependence of the saturated vapor pressure of IPA.
  • FIG. 4 is a characteristic diagram showing the temperature dependence of the nucleation density in a certain area by etching.
  • FIG. 5 is a characteristic diagram showing the temperature dependence of the etching rate in the etching of a silicon substrate using an alkaline aqueous solution.
  • FIG. 6A is a schematic diagram for explaining the uneven shape forming step according to the embodiment of the present invention.
  • FIG. 6B is a schematic diagram for explaining the uneven shape forming step in the embodiment of the present invention.
  • FIG. 6C is a schematic diagram for explaining the uneven shape forming step in the embodiment of the present invention.
  • FIG. 7A is a schematic diagram for explaining a conventional uneven shape forming process.
  • FIG. 7B is a schematic diagram for explaining a conventional uneven shape forming process.
  • FIG. 7C is a schematic diagram for explaining a conventional uneven shape forming process.
  • FIG. 7D is a schematic diagram for explaining a conventional uneven shape forming process.
  • FIGS. 1-1 to 1-4 are diagrams showing a schematic configuration of a solar battery cell 1 manufactured by a method of manufacturing a photovoltaic device according to the present embodiment
  • FIG. 1 is a cross-sectional view of the battery cell 1
  • FIG. 1-2 is a cross-sectional view of a main part for explaining the texture structure on the light receiving surface side of the solar cell 1
  • FIG. 1-3 is a top view of the solar cell 1 viewed from the light receiving surface side.
  • 1-4 are bottom views of the solar battery cell 1 as viewed from the side opposite to the light receiving surface.
  • FIG. 1-1 is a cross-sectional view in the AA direction of FIG. 1-3.
  • the solar cell 1 is a solar cell substrate having a photoelectric conversion function and having a pn junction, and a light receiving surface side surface of the semiconductor substrate 11
  • An antireflection film 17 formed on the (front surface) to prevent reflection of incident light on the light receiving surface; and a back surface side electrode 19 formed on a surface (back surface) opposite to the light receiving surface of the semiconductor substrate 11;
  • a light receiving surface side electrode 21 formed so as to penetrate the antireflection film 17 and contact the n-type impurity diffusion layer 15 on the light receiving surface side (front surface) of the semiconductor substrate 11.
  • the semiconductor substrate 11 includes a p-type (first conductivity type) polycrystalline silicon layer 13 and an n-type (second conductivity type) impurity diffusion layer 15 in which the conductivity type of the surface of the p-type polycrystalline silicon layer 13 is inverted. These constitute a pn junction.
  • fine irregularities are formed at a high density as a texture structure on the light receiving surface side surface of the semiconductor substrate 11 (n-type impurity diffusion layer 15).
  • the micro unevenness increases the area for absorbing light from the outside on the light receiving surface, suppresses the reflectance on the light receiving surface, and has a structure for confining light.
  • the back surface side electrode 19 is formed on the entire back surface of the semiconductor substrate 11.
  • the light receiving surface side electrode 21 includes a front silver grid electrode 23 and a front silver bus electrode 25 of the solar battery cell.
  • the front silver grid electrode 23 is locally provided on the light receiving surface in order to collect electricity generated by the semiconductor substrate 11.
  • the front silver bus electrode 25 is provided substantially orthogonal to the front silver grid electrode 23 in order to take out the electricity collected by the front silver grid electrode 23.
  • the solar cell 1 configured as described above, sunlight is irradiated from the light receiving surface side of the solar cell 1 to the pn junction surface of the semiconductor substrate 11 (the junction surface between the p-type polycrystalline silicon layer 13 and the n-type impurity diffusion layer 15). ), Holes and electrons are generated. Due to the electric field at the pn junction, the generated electrons move toward the n-type impurity diffusion layer 15 and the holes move toward the p-type polycrystalline silicon layer 13. As a result, electrons are excessive in the n-type impurity diffusion layer 15 and holes are excessive in the p-type polycrystalline silicon layer 13. As a result, photovoltaic power is generated.
  • This photovoltaic power is generated in the direction of biasing the pn junction in the forward direction, the light receiving surface side electrode 21 connected to the n-type impurity diffusion layer 15 becomes a negative electrode, and the back surface side electrode 19 connected to the p-type polycrystalline silicon layer 13. Becomes a positive pole, and current flows in an external circuit (not shown).
  • fine irregularities are formed at a high density as a texture structure on the surface of the semiconductor substrate 11 (n-type impurity diffusion layer 15) on the light receiving surface side. ing. Thereby, since the light reflected once hits another surface again, the reflectance at the light receiving surface can be suppressed, and the effect of confining the light in the solar battery cell 1 can be obtained more effectively. The amount of current generated is increased to improve the output characteristics.
  • a solar cell excellent in photoelectric conversion efficiency is realized by further improving the effect of confining light in the solar cell 1.
  • FIGS. 2-1 to 2-7 are cross-sectional views for explaining the manufacturing process of the solar battery cell 1 according to the present embodiment.
  • a p-type polycrystalline silicon substrate that is most frequently used for consumer solar cells is prepared (hereinafter referred to as p-type polycrystalline silicon substrate 11a) (FIG. 2-1).
  • the thickness and dimensions of the p-type polycrystalline silicon substrate 11a are not particularly limited, but in the present embodiment, as an example, the thickness of the p-type polycrystalline silicon substrate 11a is 200 ⁇ m and the dimensions are 150 mm ⁇ 150 mm.
  • the p-type polycrystalline silicon substrate 11a is manufactured by slicing an ingot formed by cooling and solidifying molten silicon with a wire saw, damage at the time of slicing remains on the surface (damage layer).
  • the damaged layer on the surface layer has extremely poor crystallinity and needs to be removed in order to sufficiently function as a semiconductor element. Therefore, the p-type polycrystalline silicon substrate 11a is first removed by immersing the surface of the p-type polycrystalline silicon substrate 11a in an acid or heated alkaline solution, for example, in an aqueous solution of sodium hydroxide, to etch the silicon substrate. Then, the damaged region existing near the surface of the p-type polycrystalline silicon substrate 11a is removed.
  • an alkali hydroxide aqueous solution such as an aqueous sodium hydroxide solution is used as the etching solution. More preferred.
  • the remaining damage layer appears mainly as a decrease in open circuit voltage (Voc) and fill factor (FF) in terms of the performance of the solar cell as a product.
  • the etching amount of the damaged layer is preferably 5 ⁇ m or more.
  • fine irregularities are formed as a texture structure on the light receiving surface side surface of the p-type polycrystalline silicon substrate 11a.
  • the formation of the texture structure is performed, for example, by etching the p-type polycrystalline silicon substrate 11a with an alkali hydroxide aqueous solution containing IPA.
  • the IPA temporarily adheres to the surface of the p-type polycrystalline silicon substrate 11a, inhibits the etching reaction, suppresses the etching rate, and promotes the appearance of the aforementioned nucleus 110.
  • An IPA concentration of a certain level or more is required for the role of promoting the appearance of the nucleus 110 to function effectively.
  • Table 1 shows changes in the short circuit current (Isc), which is one of the solar cell characteristics, with respect to the IPA concentration (wt%).
  • the IPA concentration (wt%) is an IPA concentration in an aqueous alkali hydroxide solution containing IPA which is an etching solution used in forming the texture structure.
  • the short-circuit current (Isc) is low because the formation of fine irregularities is not sufficient in the treatment with the IPA concentration of 1.8 wt% or less.
  • the lower limit of the IPA concentration is preferably 2.0 wt% or more, and more preferably 2.4 wt% or more.
  • the upper limit of the IPA concentration is practically 5 wt% or less from the viewpoint of preventing unnecessary consumption. However, it does not necessarily deny higher concentrations.
  • FIG. 3 is a characteristic diagram showing the temperature dependence of the saturated vapor pressure of IPA. As shown in FIG. 3, the vapor pressure increases as the temperature increases. For this reason, when the etching solution is high in temperature, the IPA in the etching solution is easily detached, and a large amount of IPA needs to be replenished in order to maintain an environment suitable for the formation of the nucleus 110, which is very difficult to control.
  • the temperature of the etching solution is low in terms of both cost and environmental load.
  • FIG. 4 is a characteristic diagram showing the temperature dependence of the nucleation density in a certain area by etching.
  • FIG. 4 shows the temperature of the etching solution and the nucleation density when an alkali hydroxide aqueous solution containing IPA is used as the etching solution when the etching time is 3 minutes and 10 minutes.
  • the density of the nuclei increases as the temperature of the etching solution decreases, and it tends to be generally stable when the temperature of the etching solution is 75 ° C. or lower.
  • the temperature of the etching solution is 75 ° C. or lower.
  • the size of the minute irregularities is preferably in the range of 1 to 5 ⁇ m.
  • the size of the micro unevenness is, for example, a crystal grain close to the (100) plane, and the size and height of each pyramid-shaped shape surrounded by the (111) plane which is the most dense surface. Is shown.
  • the required amount of etching can be performed within 10 minutes at the most, preferably within 5 minutes. .
  • an etching rate of at least 0.1 ⁇ m / min or more, preferably 0.2 ⁇ m / min or more is desired.
  • FIG. 5 is a characteristic diagram showing the temperature dependence of the etching rate in etching a silicon substrate using an alkaline aqueous solution.
  • FIG. 5 shows the relationship between the etching solution temperature and the etching rate when an alkaline aqueous solution having an IPA concentration of 3 wt% and a sodium hydroxide concentration of 3.2 wt% is used.
  • a liquid temperature of at least 55 ° C. or higher, preferably 65 ° C. or higher is preferable.
  • concentration of sodium hydroxide 1.5 wt% or more and 10 wt% or less is appropriate from the standpoint of maintaining the reaction rate-limiting concentration and practical consumption. However, other concentrations are not necessarily denied.
  • FIGS. 6-1 to 6-3 are schematic diagrams for explaining the uneven shape forming step in the present embodiment.
  • the p-type polycrystalline silicon substrate 11a (FIG. 6-1) from which the damaged layer has been removed has an IPA concentration of 3 wt% with respect to an aqueous sodium hydroxide solution having a concentration of 3.2 wt% and a temperature of 70 ° C.
  • Subsequent etching treatment is performed using an aqueous alkali solution added at%.
  • small nuclei 110 surrounded by azimuth planes with a low etching rate are stochastically developed while uniform silicon with high isotropy is initially dissolved.
  • FIGS. 7A to 7D are schematic views for explaining a conventional process for forming an uneven shape.
  • the p-type polycrystalline silicon substrate 31a from which the damaged layer has been removed is etched using an alkaline aqueous solution in which IPA is added at a concentration of 3 wt% to a sodium hydroxide aqueous solution at a concentration of 3.2 wt% and a temperature of 90 ° C.
  • IPA alkaline aqueous solution in which IPA is added at a concentration of 3 wt% to a sodium hydroxide aqueous solution at a concentration of 3.2 wt% and a temperature of 90 ° C.
  • uniform melting with high isotropic progresses, and small nuclei 110 surrounded by azimuth planes with a stochastically slow etching rate are formed (FIG. 7-1).
  • conditions for efficiently forming a good concavo-convex shape as in the case of the present embodiment are not set, so the nuclei 110 are formed at a high density as in the case of the present embodiment.
  • the nuclei 110 are formed at a
  • the etching of the azimuth plane having a low etching rate proceeds (FIG. 7-2), and the azimuth planes overlap at various places to finally form a concavo-convex shape (FIG. 7). 7-3).
  • the nuclei 110 are not formed at a high density at the initial stage of etching as in the case of the present embodiment, the density of the unevenness finally formed is also lower than that in the case of the present embodiment. Therefore, in the case of the texture structure formed by the conventional method, the effect of reducing the reflectance by the texture structure in the solar battery cell is less than that in the case of forming by the method of the present embodiment.
  • a larger amount of etching is required. As a result, the substrate thickness is further reduced and the risk of breakage is increased.
  • the p-type polycrystalline silicon substrate 11a having a textured surface with minute irregularities formed thereon is put into a thermal oxidation furnace and heated in an atmosphere of phosphorus (P) which is an n-type impurity. To do.
  • phosphorus (P) is diffused on the surface of the p-type polycrystalline silicon substrate 11a to form an n-type impurity diffusion layer 15 to form a semiconductor pn junction (FIG. 2-2).
  • FIG. 2-2 to FIG. 2-7 the description of minute irregularities is omitted.
  • the n-type impurity diffusion layer 15 is formed by heating the p-type polycrystalline silicon substrate 11a in a phosphorus oxychloride (POCl 3 ) gas atmosphere at a temperature of, for example, 800 ° C. to 850 ° C. Further, the diffusion of phosphorus (P) is controlled so that the sheet resistance of the n-type impurity diffusion layer 15 is 30 ⁇ / ⁇ to 80 ⁇ / ⁇ , preferably 40 ⁇ / ⁇ to 60 ⁇ / ⁇ .
  • a phosphorus oxychloride (POCl 3 ) gas atmosphere at a temperature of, for example, 800 ° C. to 850 ° C.
  • P phosphorus oxychloride
  • the phosphor glass layer mainly composed of glass is formed on the surface immediately after the formation of the n-type impurity diffusion layer 15, the phosphor glass layer is removed using a hydrofluoric acid solution or the like.
  • a silicon nitride film (SiN film) is formed as an antireflection film 17 on the light receiving surface side of the p-type polycrystalline silicon substrate 11a on which the n-type impurity diffusion layer 15 is formed in order to improve the photoelectric conversion efficiency ( Fig. 2-3).
  • a plasma CVD method is used, and a silicon nitride film is formed as the antireflection film 17 using a mixed gas of silane and ammonia.
  • the film thickness and refractive index of the antireflection film 17 are set to values that most suppress light reflection.
  • two or more films having different refractive indexes may be laminated.
  • a different film forming method such as a sputtering method may be used for forming the antireflection film 17.
  • a silicon oxide film may be formed as the antireflection film 17.
  • the removal of the n-type impurity diffusion layer 15 formed on the back surface of the p-type polycrystalline silicon substrate 11a is performed using, for example, a single-sided etching apparatus.
  • a method of using the antireflection film 17 as a mask material and immersing the entire p-type polycrystalline silicon substrate 11a in an etching solution may be used.
  • an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide heated to room temperature to 95 ° C., preferably 50 ° C. to 70 ° C. is used.
  • a mixed aqueous solution of nitric acid and hydrofluoric acid may be used as the etching solution.
  • electrodes are formed by screen printing.
  • the back surface side electrode 19 is produced (before baking). That is, an aluminum paste 19a, which is an electrode material paste, is applied to the shape of the back surface side electrode 19 by screen printing on the back surface side of the semiconductor substrate 11 and dried (FIG. 2-5).
  • the light-receiving surface side electrode 21 is produced (before firing). That is, after applying the silver paste 21a, which is the light receiving surface side electrode material paste, to the shape of the front silver grid electrode 23 and the front silver bus electrode 25 on the antireflection film 17 that is the light receiving surface of the semiconductor substrate 11 by screen printing. The silver paste is dried (FIGS. 2-6).
  • the paste is baked to obtain the back surface side electrode 19, and the front silver grid electrode 23 and the front silver bus electrode 25 as the light receiving surface side electrode 21 (FIG. 2-7).
  • Firing is performed by selecting in the air atmosphere, for example, in the range of 750 to 850 ° C. The firing temperature is selected in consideration of the cell structure and paste type.
  • silver in the light receiving surface side electrode 21 penetrates the antireflection film 17, and the n-type impurity diffusion layer 15 and the light receiving surface side electrode 21 are electrically connected. Thereby, the n-type impurity diffusion layer 15 can obtain a good resistive junction with the light receiving surface side electrode 21.
  • the solar cell 1 according to the present embodiment shown in FIGS. 1-1 to 1-4 can be manufactured.
  • the order of arrangement of the paste, which is an electrode material, on the semiconductor substrate 11 may be switched between the light receiving surface side and the back surface side.
  • minute irregularities are formed at a high density as a texture structure on the surface of the semiconductor substrate 11 (n-type impurity diffusion layer 15) on the light receiving surface side.
  • the area which absorbs the light from the outside on the light receiving surface can be increased, the reflectance on the light receiving surface can be suppressed, and the effect of confining the light in the solar battery cell 1 can be obtained more effectively.
  • the output characteristics can be improved by increasing the amount of current obtained from the above.
  • a mixture of an alkali hydroxide aqueous solution and isopropyl alcohol as an etchant is used. Etching is performed under the condition that the solution temperature is 55 ° C. or higher and 75 ° C. or lower.
  • minute irregularities can be efficiently and densely formed on the light receiving surface side of the p-type polycrystalline silicon substrate 11a.
  • consumption of materials and power required for forming irregularities can be suppressed, and manufacturing costs and environmental loads can be reduced.
  • the effect of confining light in the solar cell 1 can be further improved, and a solar cell excellent in photoelectric conversion efficiency can be produced.
  • a mixed solution of an alkali hydroxide aqueous solution and isopropyl alcohol is used in order to efficiently form a favorable uneven shape on the surface of the silicon substrate without damaging the silicon substrate.
  • the present invention is applicable when a mixed solution of an alkali hydroxide aqueous solution and an alcohol is used as the mixed solution in an environment where the saturated vapor pressure of the alcohol is 200 mmHg or more and 600 mmHg or less. Can be obtained.
  • examples of such alcohol include ethanol and 1-propanol in addition to isopropyl alcohol.
  • the rate of alcohol removal from the mixture is high, and the silicon etching reaction is not stable.
  • the saturated vapor pressure of alcohol is less than 200 mmHg, there is no problem with the rate of alcohol release, but the reaction rate of the aqueous alkali hydroxide solution that is the mixing partner is too low.
  • the case where a p-type silicon substrate is used as the semiconductor substrate has been described.
  • the reverse conductivity type in which a p-type diffusion layer is formed using an n-type silicon substrate as the semiconductor substrate can also be obtained in solar cells.
  • the polycrystalline silicon substrate is used as the semiconductor substrate.
  • the above-described effects of the present invention can be obtained even when a single crystal silicon substrate is used as the semiconductor substrate.
  • the substrate thickness of the semiconductor substrate is 200 ⁇ m
  • a substrate thinned to about 50 ⁇ m can be used as long as the substrate can be self-held.
  • the size of the semiconductor substrate is 150 mm ⁇ 150 mm.
  • the above-described effect of the present invention is achieved. Needless to say, you can get it.
  • the method for roughening a substrate according to the present invention is useful for efficiently and densely forming minute irregularities on the surface of the substrate, and is particularly suitable for roughening a solar cell substrate. ing.

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Abstract

L'invention porte sur un procédé de rugosification d'une surface de substrat, dans lequel une structure de texturation est formée dans la surface d'un substrat en silicium (11a) par soumission du substrat en silicium (11a) à un traitement de surface. Le procédé de rugosification d'une surface de substrat comprend une étape de formation de renfoncements/saillies à laquelle de fins renfoncements et de fines saillies sont formés dans la surface du substrat en silicium (11a) par attaque chimique de la surface du substrat en silicium (11a) en utilisant comme liquide d'attaque une solution mixte d'une solution aqueuse d'hydroxyde alcalin et d'un alcool dans un environnement dans lequel la pression de vapeur saturante de l'alcool est supérieure ou égale à 200 mmHg mais inférieure ou égale à 600 mmHg dans des conditions telles que la température du liquide d'attaque est supérieure ou égale à 55°C mais inférieure ou égale à 75°C.
PCT/JP2009/068028 2009-10-19 2009-10-19 Procédé de rugosification de surface de substrat, et procédé de fabrication de dispositif photovoltaïque Ceased WO2011048656A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013143404A (ja) * 2012-01-06 2013-07-22 Mitsubishi Electric Corp シリコン基板のエッチング方法
JPWO2012165288A1 (ja) * 2011-06-03 2015-02-23 三洋電機株式会社 太陽電池の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法
JP2008311291A (ja) * 2007-06-12 2008-12-25 Sharp Corp 太陽電池の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008010746A (ja) * 2006-06-30 2008-01-17 Sharp Corp 太陽電池、および太陽電池の製造方法
JP2008311291A (ja) * 2007-06-12 2008-12-25 Sharp Corp 太陽電池の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2012165288A1 (ja) * 2011-06-03 2015-02-23 三洋電機株式会社 太陽電池の製造方法
JP2013143404A (ja) * 2012-01-06 2013-07-22 Mitsubishi Electric Corp シリコン基板のエッチング方法

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