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WO2011047875A8 - Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method - Google Patents

Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method Download PDF

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Publication number
WO2011047875A8
WO2011047875A8 PCT/EP2010/006468 EP2010006468W WO2011047875A8 WO 2011047875 A8 WO2011047875 A8 WO 2011047875A8 EP 2010006468 W EP2010006468 W EP 2010006468W WO 2011047875 A8 WO2011047875 A8 WO 2011047875A8
Authority
WO
WIPO (PCT)
Prior art keywords
metal contact
seed layer
light
induced
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/006468
Other languages
German (de)
French (fr)
Other versions
WO2011047875A3 (en
WO2011047875A2 (en
Inventor
Valentin Radtke
Norbert Bay
Monica Aleman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Albert Ludwigs Universitaet Freiburg
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Albert Ludwigs Universitaet Freiburg
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Albert Ludwigs Universitaet Freiburg, Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Albert Ludwigs Universitaet Freiburg
Priority to CN2010800588719A priority Critical patent/CN102686784A/en
Priority to EP10776563A priority patent/EP2491166A2/en
Publication of WO2011047875A2 publication Critical patent/WO2011047875A2/en
Publication of WO2011047875A8 publication Critical patent/WO2011047875A8/en
Publication of WO2011047875A3 publication Critical patent/WO2011047875A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/011—Electroplating using electromagnetic wave irradiation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/007—Current directing devices
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/18—Electroplating using modulated, pulsed or reversing current
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C25D7/126—Semiconductors first coated with a seed layer or a conductive layer for solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The present invention relates to a light-induced, galvanic deposition method, wherein the potential difference between a first metal contact and an auxiliary electrode is varied as a function of time according to a predefined voltage/time characteristic and a light radiation on a solar cell is varied as a function of time according to a light radiation/time characteristic.
PCT/EP2010/006468 2009-10-23 2010-10-22 Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method Ceased WO2011047875A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN2010800588719A CN102686784A (en) 2009-10-23 2010-10-22 Method of photoelectrochemical pulse deposition for forming a seed layer for metal contacts of a solar cell and subsequent strengthening of the seed layer or the metal contacts and device for carrying out the method
EP10776563A EP2491166A2 (en) 2009-10-23 2010-10-22 Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009051688.3 2009-10-23
DE102009051688A DE102009051688A1 (en) 2009-10-23 2009-10-23 Method for light-induced galvanic pulse deposition for forming a seed layer for metal contact of a solar cell and for subsequent reinforcement of this seed layer or metal contact and arrangement for carrying out the method

Publications (3)

Publication Number Publication Date
WO2011047875A2 WO2011047875A2 (en) 2011-04-28
WO2011047875A8 true WO2011047875A8 (en) 2011-06-30
WO2011047875A3 WO2011047875A3 (en) 2012-02-09

Family

ID=43796885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/006468 Ceased WO2011047875A2 (en) 2009-10-23 2010-10-22 Method for the light-induced, galvanic pulsed deposition for forming a seed layer for a metal contact of a solar cell and for the subsequent reinforcement of said seed layer or said metal contact and arrangement for carrying out the method

Country Status (5)

Country Link
EP (1) EP2491166A2 (en)
KR (1) KR20120110101A (en)
CN (1) CN102686784A (en)
DE (1) DE102009051688A1 (en)
WO (1) WO2011047875A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2010314804B2 (en) * 2009-11-03 2016-12-01 Newsouth Innovations Pty Limited Photoplating of metal electrodes for solar cells
DE102011084843A1 (en) 2011-10-20 2013-04-25 Schott Solar Ag Electroplating of galvanic emitter contact used for silicon-based wafer for solar cell involves using fluoride-containing nickel and/or cobalt electrolyte composition
KR101449942B1 (en) 2012-01-17 2014-10-17 주식회사 호진플라텍 Plating equipment for solar cell wafer using electroplating and light-induced plating jointly and method of the same
DE102014210008A1 (en) * 2014-05-26 2015-11-26 Muhr Und Bender Kg Method and plant for producing a hardened molded part
CN106531817A (en) * 2015-09-08 2017-03-22 英属开曼群岛商精曜有限公司 Semiconductor element and manufacturing method thereof
CN114744073B (en) * 2022-01-26 2025-03-14 深圳黑晶光电科技有限公司 Method for realizing metallization of solar cell and crystalline silicon solar cell
CN118841475B (en) * 2023-04-23 2025-08-12 环晟光伏(江苏)有限公司 Single-welded cell and preparation method thereof, cell string, and photovoltaic module

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251327A (en) * 1980-01-14 1981-02-17 Motorola, Inc. Electroplating method
US4608138A (en) * 1984-02-16 1986-08-26 Mitsubishi Denki Kabushiki Kaisha Electrolytic method and apparatus
CN100576578C (en) * 2006-04-20 2009-12-30 无锡尚德太阳能电力有限公司 Method for preparing solar cell electrode and electrochemical deposition device thereof
CN100533785C (en) * 2006-06-05 2009-08-26 罗门哈斯电子材料有限公司 Plating method
US20080035489A1 (en) * 2006-06-05 2008-02-14 Rohm And Haas Electronic Materials Llc Plating process
DE102007005161B4 (en) * 2007-01-29 2009-04-09 Nb Technologies Gmbh Process for the metallization of substrates
JP5216633B2 (en) * 2008-03-19 2013-06-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Method for suppressing background plating
DE102009029551B4 (en) * 2009-09-17 2013-12-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method and device for galvanic coating of substrates

Also Published As

Publication number Publication date
WO2011047875A3 (en) 2012-02-09
DE102009051688A1 (en) 2011-04-28
WO2011047875A2 (en) 2011-04-28
EP2491166A2 (en) 2012-08-29
KR20120110101A (en) 2012-10-09
CN102686784A (en) 2012-09-19

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