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WO2011040466A1 - Dispositif de traitement de modèles, système d'impression, procédé de traitement de modèles et support de stockage informatique - Google Patents

Dispositif de traitement de modèles, système d'impression, procédé de traitement de modèles et support de stockage informatique Download PDF

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Publication number
WO2011040466A1
WO2011040466A1 PCT/JP2010/066948 JP2010066948W WO2011040466A1 WO 2011040466 A1 WO2011040466 A1 WO 2011040466A1 JP 2010066948 W JP2010066948 W JP 2010066948W WO 2011040466 A1 WO2011040466 A1 WO 2011040466A1
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WO
WIPO (PCT)
Prior art keywords
template
release agent
coating liquid
unit
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/066948
Other languages
English (en)
Japanese (ja)
Inventor
正一 寺田
義雄 木村
高広 北野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2009229206A external-priority patent/JP2011025220A/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of WO2011040466A1 publication Critical patent/WO2011040466A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to a template processing apparatus in which a transfer pattern is formed on the surface of a template and a coating film is formed on a release agent formed on the surface, an imprint system including the template processing apparatus, and the template processing apparatus
  • the present invention relates to a template method using computer and a computer storage medium.
  • a semiconductor wafer (hereinafter referred to as “wafer”) is subjected to a photolithography process to form a predetermined resist pattern on the wafer.
  • the resist pattern When forming the above-described resist pattern, the resist pattern is required to be miniaturized in order to further increase the integration of the semiconductor device.
  • the limit of miniaturization in the photolithography process is about the wavelength of light used for the exposure process. For this reason, it has been advancing to shorten the wavelength of exposure light.
  • the wavelength of the exposure light source there are technical and cost limitations to shortening the wavelength of the exposure light source, and it is difficult to form a fine resist pattern on the order of several nanometers, for example, only by the method of advancing the light wavelength. is there.
  • Patent Document 1 a template T (sometimes called a mold or a mold) in which a fine transfer pattern C is formed on the surface and a release agent S is formed on the surface as shown in FIG. Used.
  • the template T on which the release agent S is formed is pressed against the resist film R, the transfer pattern C is transferred, and the resist pattern P is formed.
  • the resist film R is irradiated with light, and the resist film R is photopolymerized.
  • the template T is raised, and a resist pattern P is formed on the wafer W.
  • a resist solution is applied on a template T on which a release agent S is formed to form a resist film R.
  • the template T on which the resist film R is formed is raised and pressed against the wafer W, and the resist film R is irradiated with light to photopolymerize the resist film R.
  • the template T is lowered to form a resist pattern P on the wafer W, as shown in FIG.
  • the resist solution is applied to the template T in a state where the release agent S is formed and the liquid repellency is increased. that resist solution R 1 does not enter into the recess portion U of the transfer pattern C as shown, a new problem arises. In this case, it will remain in the interior of the resist solution R 1 is recess U in the form of droplets, the shape of the droplet from being directly transferred to the resist pattern P on the wafer W, the predetermined on the wafer W The resist pattern P cannot be formed properly.
  • the present invention has been made in view of the above points, and an object of the present invention is to appropriately form a coating film on a release agent formed on the surface of a template and eliminate the need for alignment during pattern transfer.
  • the present invention provides a template processing apparatus in which a transfer pattern is formed on the surface of a template, and a coating film is formed on a release agent formed on the surface. And a template loading / unloading station capable of holding a plurality of the templates and loading / unloading the templates to / from the processing station.
  • a coating solution supply unit that supplies the coating solution to the mold, and a coating solution filling unit that pushes the coating solution applied onto the mold release agent into the recess of the transfer pattern of the template.
  • the coating liquid coated on the template release agent can be pushed into the depression of the template transfer pattern by the coating liquid filling section. That is, the coating liquid can be filled in the depressions of the template transfer pattern without gaps. Therefore, when forming a predetermined pattern on the substrate using the template on which the coating liquid is formed in this way, it is possible to form the predetermined pattern on which the transfer pattern of the template is appropriately transferred on the substrate. Further, when a pattern is formed on a substrate using a template on which a coating solution is formed, alignment adjustment between the coating film on the substrate and the transfer pattern of the template, which has been conventionally performed, becomes unnecessary. Therefore, throughput can be improved.
  • Another aspect of the present invention is an imprint system including the template processing apparatus, wherein the transfer pattern is transferred to a coating film formed on a substrate using the template processed in the processing station. And an imprint unit that forms a predetermined pattern on the coating film, and a substrate carry-in / out station that can hold a plurality of the substrates and carries the substrate into and out of the imprint unit.
  • Another aspect of the present invention is a template processing method in which a transfer pattern is formed on the surface of a template using a template processing apparatus, and a coating film is formed on a release agent formed on the surface. It has the process of apply
  • a readable computer storage storing a program operating on a computer of a control unit that controls the template processing apparatus. It is a medium.
  • the coating film can be appropriately formed on the release agent formed on the template surface.
  • FIG. 7A is an explanatory diagram schematically showing a state of a template in a resist film forming process
  • FIG. 7A shows a state in which a resist solution is supplied to the surface of the template
  • FIG. FIG. 7 (c) shows a state in which a resist film is formed on the surface of the template.
  • FIG.9 (a) shows a mode that the surface of the template was wash
  • FIG. 9 (c) shows a state in which the release agent is applied to the surface of the template
  • FIG. 9 (c) shows a state in which the release agent on the template is baked
  • FIG. 9 (d) shows a film formation of the release agent on the template.
  • FIG. 9 (a) shows a mode that the surface of the template was wash
  • FIG. 9 (c) shows a state in which the release agent is applied to the surface of the template
  • FIG. 9 (c) shows a state in which the release agent on the template is baked
  • FIG. 9 (d) shows a film formation of the release agent on the template.
  • FIG. 9 (a) shows
  • FIG. 4 is an explanatory view showing a state in which a resist film is formed on a template. It is explanatory drawing which showed typically a mode that a resist liquid was pushed in the hollow part with the roller. It is explanatory drawing which showed typically a mode that a resist liquid was pushed into the hollow part with the brush. It is explanatory drawing which showed typically a mode that a filter was arrange
  • FIG.16 (a) shows a mode that a resist liquid is apply
  • FIG. 16C shows a state where a resist film is formed on the template. It is a top view of a holder.
  • FIG.23 (a) shows a mode that the template was pressed on the wafer
  • FIG.23 (b) is a resist film on a wafer.
  • FIG. 23C shows a state in which a resist pattern is formed on the wafer
  • FIG. 23D shows a state in which the remaining film on the wafer is removed.
  • It is a top view which shows the outline of a structure of the imprint system concerning other embodiment. It is explanatory drawing which showed typically the state of the template and wafer in each process of the conventional imprint process, Fig.25 (a) shows a mode that the resist liquid was apply
  • FIG. 25C is an explanatory view showing a state in which a resist pattern is formed on the wafer.
  • FIGS. 26A and 26B are explanatory views schematically showing the state of the template and the wafer in each step of the imprint process.
  • FIG. 26A and 26B are explanatory views schematically showing the state of the template and the wafer in each step of the imprint process.
  • FIG. 26A shows a state in which a resist film is formed on the template
  • FIG. FIG. 26C is an explanatory view showing a state in which a resist pattern is formed on the wafer. It is explanatory drawing which shows typically a mode that the resist liquid was supplied to the surface of the template.
  • FIG. 1 is a plan view schematically showing the configuration of the template processing apparatus 1 according to the present embodiment.
  • a template T having a rectangular parallelepiped shape and having a predetermined transfer pattern C formed on the surface is used as shown in FIG.
  • the transfer pattern C means the side of the template T which is formed with the surface T 1, the surface T 1 opposite to the surface of the backside T 2.
  • a transparent material that can transmit visible light, near ultraviolet light, ultraviolet light, or the like, such as glass, is used.
  • Template processing unit 1 includes a plurality as shown in FIG. 1, for example, five of the template T or transferring, between the outside and the template processing apparatus 1 with the cassette unit, carrying out a template T the template cassette C T
  • the template loading / unloading station 2 and the processing station 3 including a plurality of processing units for performing predetermined processing on the template T are integrally connected.
  • the template loading / unloading station 2 is provided with a cassette mounting table 10.
  • the cassette mounting table 10 can mount a plurality of template cassettes CT in a line in the X direction (vertical direction in FIG. 1). That is, the template carry-in / out station 2 is configured to be capable of holding a plurality of templates T.
  • the template carry-in / out station 2 is provided with a template carrier 12 that can move on a conveyance path 11 extending in the X direction.
  • the template transport body 12 is also movable in the vertical direction and the vertical direction ( ⁇ direction), and can transport the template T between the template cassette CT and the processing station 3.
  • the processing station 3 includes a transfer line A for the template T.
  • the transfer line A is arranged on the front side (X direction negative direction side in FIG. 1) in the processing station 3 and extends in the Y direction, and a line extending in the X direction at the opposite end of the template loading / unloading station 2.
  • A2 and a line A3 extending in the Y direction on the back side (X direction positive direction side in FIG. 1) are connected in this order.
  • a plurality of transfer rollers 30 to be described later are arranged side by side on the transfer line A, and the template T can be transferred by roller transfer. That is, the template T transferred from the template loading / unloading station 2 to the processing station 3 is sequentially transferred along the lines A1, A2, and A3.
  • the line A1 in order from the template carry-out station 2 side, the transition unit 20 for passing the template T, the pre-cleaning unit release agent on the template T is to clean the surface T 1 of the before the deposition 21
  • a mold release agent coating unit 22 for applying a liquid mold release agent to the template T and a heating unit 23 for heating the template T are arranged in a row.
  • a temperature adjustment unit 24 for adjusting the temperature of the template T is arranged.
  • a rinsing unit 25 for rinsing the release agent on the template T in order toward the template loading / unloading station 2 side, a rinsing unit 25 for rinsing the release agent on the template T, a resist application unit 26 for applying a resist solution on the release agent of the template T, and a transition unit 27 are arranged in a line.
  • the processing units 21 to 25 form a release agent film forming line (release agent film forming block).
  • a plurality of transport rollers 30 are arranged side by side in the direction along the transport line A, as shown in FIGS.
  • Each conveyance roller 30 is configured to be rotatable about a central axis extending in a direction perpendicular to the direction along the conveyance line A as a rotation axis.
  • at least one transfer roller 30 is provided with a drive mechanism (not shown) including a motor, for example.
  • the template T is transported between the transition units 20 and 27 on the transport rollers 30.
  • the transition unit 20 of the transport line A has lifting pins 40 for supporting and lifting the template T from below.
  • the raising / lowering pin 40 can be moved up and down by the raising / lowering drive part 41 provided under the conveyance roller 30.
  • the elevating pins 40 are arranged so as to be inserted between the plurality of conveying rollers 30 arranged side by side along the conveying line A. With the elevating pins 40, the template T is placed on the transfer roller 30 from the template transfer body 12.
  • transition unit 27 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
  • the transport line A is bent in the direction perpendicular to the line A2 as shown in FIG. 1, but is shown in a straight line in FIG. 4 in order to give priority to the understanding of the configuration. .
  • the conveyance line A is provided with a casing 50 as shown in FIGS.
  • the inside of the casing 50 is partitioned by a plurality of partition walls 51, and the partitioned spaces constitute processing units 21 to 26, respectively.
  • a loading / unloading port 52 for the template T is formed at a height corresponding to the transfer roller 30.
  • Each loading / unloading port 52 may be provided with an open / close shutter (not shown) so that the inside of each processing unit 21 to 26 can be sealed.
  • the pre-cleaning unit 21 has an ultraviolet irradiation unit 60 that irradiates the template T with ultraviolet rays.
  • the ultraviolet irradiation unit 60 is disposed above the transport roller 30 and extends in the width direction of the template T (longitudinal direction of the transport roller 30). Then, the entire surface T 1 of the template T is irradiated with ultraviolet rays by irradiating the surface T 1 of the template T being conveyed on the conveyance roller 30 with ultraviolet rays.
  • the release agent application unit 22 has a release agent nozzle 61 as a release agent supply unit that supplies the release agent onto the template T.
  • the release agent nozzle 61 is disposed above the conveying roller 30.
  • the release agent nozzle 61 extends in the width direction of the template T, and a slit-like supply port (not shown) is formed on the lower surface thereof. Then, by supplying a release agent to the surface T 1 from the release agent nozzle 61 of the template T being conveyed to conveying roller 30 above, the release agent is applied to the entire surface of the surface T 1.
  • the release agent application unit 22 is connected to a discharge pipe (not shown) for collecting and discharging the release agent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere. Yes.
  • a material having a liquid repellency with respect to a resist film on the wafer which will be described later, such as a fluororesin, is used as the material of the release agent.
  • the heating unit 23 has a hot plate 62 disposed above the transfer roller 30.
  • a heater that generates heat by power feeding is provided inside the hot plate 62, and the hot plate 62 can be adjusted to a predetermined set temperature.
  • the heat plate 62 extends in the width direction of the template T, can be heated template T being conveyed to conveying roller 30 above the surface T 1 side (transfer pattern C side).
  • the heating unit 23 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
  • the heating plate 62 is heated template T from the surface T 1 side, may be heated to template T from the back T 2 side. That is, the hot plate may be arranged at the same height as the conveying roller 30 or may be arranged below the conveying roller 30. Furthermore, by both placing these hot plate, the template T may be heated from the both surfaces T 1 and back T 2.
  • a part of the conveyance roller 30 constitutes a temperature adjustment roller 30a. Cooling water for cooling the template T circulates inside the temperature adjusting roller 30a. Further, a gas supply unit 63 that blows an inert gas such as nitrogen or a gas gas such as dry air downward is disposed above the transfer roller 30. Gas supply unit 63 extends in the width direction of the template T, it is possible to blow air gas on the surface T 1 entire template T being conveyed. The template T is adjusted to a predetermined temperature by the temperature adjusting roller 30a and the gas supply unit 63. The temperature control unit 24 is connected to an exhaust pipe (not shown) that exhausts the internal atmosphere.
  • the rinsing unit 25 includes a rinsing liquid nozzle 64 for supplying an organic solvent as a rinsing liquid for the release agent onto the template T, and an inert gas such as nitrogen or dry air on the template T.
  • the rinsing liquid nozzle 64 and the gas nozzle 65 are arranged above the conveying roller 30 in this order from the temperature adjustment unit 24 side.
  • the rinse liquid nozzle 64 and the gas nozzle 65 are each extended
  • the rinse unit 25 is connected to a discharge pipe (not shown) for collecting and discharging the organic solvent dropped from the template T and an exhaust pipe (not shown) for exhausting the internal atmosphere.
  • the resist coating unit 26 is pressed against a resist solution nozzle 70 serving as a coating solution supply unit that supplies a resist solution as a coating solution onto the mold release agent of the template T, and the resist solution coated on the release agent,
  • a squeegee 71 is provided as a coating solution filling portion for pushing the resist solution into the depression of the transfer pattern C of the template T.
  • the resist solution nozzle 70 and the squeegee 71 are disposed above the transfer roller 30.
  • a rail 72 extending along the X direction (vertical direction in FIG. 6) is provided on the Y direction positive direction (right direction in FIG. 6) side in the casing 50.
  • An arm 73 is attached to the rail 72, and the resist coating nozzle 70 is supported by the arm 73.
  • an ink jet type nozzle is used as the resist solution nozzle 70, and a plurality of supply ports (not shown) formed in a line along the longitudinal direction are formed below the resist solution nozzle 70.
  • the resist solution nozzle 70 can strictly control the resist solution supply timing, the resist solution supply amount, and the like.
  • the arm 73 is movable on the rail 72 by an arm driving unit 74.
  • the resist solution nozzle 70 can move from the standby portion 75 installed outside the casing 50, for example, on the positive side in the X direction, to above the template T on the transfer roller 30. Can move in the X direction on the surface.
  • the arm 73 can be moved up and down by a nozzle driving unit 74 and the height of the resist solution nozzle 70 can be adjusted.
  • a rail 76 extending in the X direction (up and down direction in FIG. 6) is similarly provided on the Y direction negative direction (left direction in FIG. 6) in the casing 50.
  • An arm 77 is attached to the rail 76, and the squeegee 71 is supported by the arm 77.
  • the arm 77 is movable on the rail 76 by an arm driving unit 78.
  • a standby unit 79 is installed outside the casing 50 on the X direction negative direction side. Since the operation of the arm 77 and the like is the same as that of the above-described arm 73 and the like, description thereof will be omitted.
  • the surface of the squeegee 71 in contact with the resist solution is subjected to a liquid repellent treatment with a material having liquid repellency with respect to the resist solution, for example, a fluororesin.
  • a liquid repellent treatment the surface of the squeegee 71 is not coated with a liquid repellent material, but the squeegee 71 itself may be formed of a material having liquid repellency, such as polyurethane.
  • the resist solution R 1 is supplied from the resist solution nozzle 70 onto the release agent S formed on the surface T 1 of the template T. At this time, as shown in FIG. 7A, the resist solution R 1 does not completely enter the recess U of the transfer pattern C of the template T due to the water repellency of the release agent S, Stay in the state of. Then, pressing the squeegee 71 in the resist solution R 1, is moved in the positive direction in the X-direction of FIG. 6 in a state of pressing the squeegee 71 to resist liquid as shown in FIG.
  • the squeegee 71 of the template T By pushing the resist solution R 1 into the recess U of the transfer pattern C, the recess R is filled with the resist solution R 1 without a gap.
  • a resist film R is formed on the release agent S as shown in FIG. In FIG. 7, had been pushing the resist solution R 1 while moving the squeegee 71 moves, for example, by carrying rollers 30 a template T in the positive direction in the X-direction of FIG. 6 (upward direction in FIG. 6) By doing so, the template T can be moved relative to the squeegee 71 even when the position of the squeegee 71 is fixed.
  • the squeegee 71 is not necessarily configured to be movable. . In this case, the rail 76 becomes unnecessary. In addition, as with the squeegee 71, the rail 72 is not necessarily required for the resist solution nozzle 70 as well.
  • the control unit 100 is, for example, a computer and has a program storage unit (not shown).
  • the program storage unit controls the transfer of the template T between the template loading / unloading station 2 and the processing station 3, the operation of the drive system in the processing station 3, and the like.
  • the program that executes is stored.
  • This program is recorded in a computer-readable storage medium such as a computer-readable hard disk (HD), flexible disk (FD), compact disk (CD), magnetic optical desk (MO), memory card, or the like. Or installed in the control unit 100 from the storage medium.
  • HD computer-readable hard disk
  • FD flexible disk
  • CD compact disk
  • MO magnetic optical desk
  • the template processing apparatus 1 is configured as described above. Next, in the template processing apparatus 1, the release agent S is formed on the template T, and the formation of the resist film R on the release agent S will be described.
  • FIG. 8 shows the main processing flow of this template processing
  • FIG. 9 shows the state of the template T in each step.
  • the template carrier 12, the template T is taken from the template cassette C T on the cassette mounting table 10, (step G1 of Fig. 8) to be conveyed to the transition unit 20 in the processing station 3.
  • the template cassette C T the template T, the surface T 1 of the transfer pattern C is formed is accommodated so as to face upward, the template T in this state is conveyed to the transition unit 20.
  • the template T transported into the transition unit 20 is placed on the transport roller 30 by the lifting pins 40 and transported along the transport line A by roller transport at a predetermined speed.
  • the transfer unit A, the pre-cleaning unit 21, the release agent application unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, the resist application unit 26, and the transition unit 27 are sequentially transferred to each processing unit.
  • a predetermined process is performed on the template T being conveyed.
  • the release agent coating unit 22 supplies the release agent S on the template T from the release agent nozzle 61, a release agent to the surface T 1 the entire surface of the template T as shown in FIG. 9 (b) S Is applied (step G3 in FIG. 8).
  • the heating unit 23 the template T is heated to, for example, 200 ° C. by the hot plate 62, and the release agent S on the template T is baked as shown in FIG.
  • step G4 in FIG. 8 Thereafter, in the temperature adjustment unit 24, the template T is adjusted to a predetermined temperature by the temperature adjustment roller 30 a and the gas supply unit 63. Thereafter, in the rinsing unit 25, an organic solvent is supplied to the template T from the rinsing liquid nozzle 64, and only the unreacted portion of the release agent S on the template T is peeled off. Thus, as shown in FIG. 9D, the release agent S along the transfer pattern C is formed on the template T (step G5 in FIG. 8). Subsequently, in the rinsing unit 25 blows air gas on the template T from the gas nozzle 65, the surface T 1 is is dried.
  • the unreacted part of the release agent S means a part other than the part where the release agent S chemically reacts with the surface T 1 of the template T and adsorbs to the surface T 1 .
  • the resist solution nozzle 70 is moved in the X direction of FIG. 6, and the release agent S on which the template T is formed is applied as shown in FIG. supplying a resist solution R 1 (step G6 in FIG. 8).
  • the control unit 100 controls the supply timing, supply amount, and the like of the resist solution R 1 supplied from the resist solution nozzle 70.
  • the amount of the resist solution R 1 applied to a portion formed on the convex portion is small
  • the recessed portion U the amount of the resist solution R 1 applied to the corresponding portion (portion corresponding to the convex portion of the resist pattern) in is controlled to be larger.
  • the resist solution R 1 is applied on the wafer W in accordance with the aperture ratio of the transfer pattern C.
  • the squeegee 71 When the resist solution R 1 is applied onto the template T, the squeegee 71 is moved in the X direction in FIG. 6 with the squeegee 71 pressed against the resist solution R 1 as shown in FIG. pushing the resist solution R 1 of the recess portion U of the transfer pattern C. As a result, as shown in FIG. 9G, a resist film R is formed on the release agent S on the template T (step G7 in FIG. 8).
  • the template T carried to the transit unit 27 is delivered to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T (step in FIG. 8 G8).
  • a series of release agent processing in the template processing apparatus 1 is completed.
  • the resist coating unit 26 after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 Template
  • the resist solution R 1 By pushing into the recess U of the transfer pattern C of T, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer. Note that the operation, effect, and the like in the case of forming a predetermined resist pattern on the wafer using the template T will be described in detail later.
  • the template loading / unloading station 2 can hold a plurality of templates T
  • the template T can be continuously transferred from the template loading / unloading station 2 to the processing station 3.
  • the template T is roller-transferred to the various processing units 21 to 27 arranged on the transfer line A by a plurality of transfer rollers 30, and a predetermined process is performed on the template T being transferred. Therefore, predetermined processing can be continuously performed on the plurality of templates T. Therefore, the resist film R can be continuously formed on the plurality of templates T.
  • the template T has a thickness of 6.35 mm, for example.
  • the heating plate 62 is arranged above the transfer roller 30, that is, on the transfer pattern C side (surface T 1 side) of the template T in the heating unit 23, the surface of the template T From the T 1 side, the release agent S on the surface T 1 can be directly heated. Therefore, regardless of the thickness of the template T, the release agent S can be efficiently heated and fired. Further, even when the heating plate 62 is disposed below the template T, it is possible to efficiently heat the release agent S from the back T 2 side of the template T by thermal conduction.
  • the surface of the squeegee 71 that comes into contact with the resist solution R 1 is subjected to a liquid repellent treatment, it is possible to suppress the resist solution R 1 from adhering to the squeegee 71.
  • the squeegee 71 is used as the coating liquid filling portion to be pushed into the recess U of the transfer pattern C of the template T.
  • the coating liquid filling portion is not limited to the squeegee 71, and the resist as long as the liquid R 1 can form a resist film R pushing the recess U of the transfer pattern C, may also be used such as roller 101 and brush 102 as shown in FIG. 10 and FIG. 11 for example. Even such a case, the surface in contact with the resist solution R 1 are preferably subjected to liquid repellent treatment.
  • the squeegee 71 is pressed directly against the resist solution R 1 applied to the template T.
  • the upper surface of the resist solution R 1 applied to the template T. to place the liquid-repellent treated filter F1, or by pressing a squeegee 71 via the filter F1 in the resist solution R 1.
  • adhesion of the resist solution R 1 to the squeegee 71 can be further suppressed.
  • particles attached to the squeegee 71 can be prevented from attaching to the template T side.
  • the resist solution R 1 on the upper surface of the filter F2 After coating, the resist film R may be formed by the squeegee 71.
  • the filter F2 the surface capable permeate repellent treated and the resist solution R 1 is used.
  • the application of the release agent S on the template T and the heating of the template T are performed in separate processing units (the release agent application unit 22 and the heating unit 23).
  • the processing unit may be used. That is, the release agent nozzle 61 and the hot plate 62 described above may be arranged in this order in the direction along the transport line A in one processing unit.
  • the resist film R is formed on the surface T 1 of the template T by supplying the resist solution R 1 onto the template T in the resist coating unit 26 of the processing station 3.
  • resist solution may be performed by pressing a stamp is applied to the surface T 1 of the template T on.
  • a stamp unit 110 is arranged on the transport line A of the template processing apparatus 1 instead of the resist coating unit 26 shown in FIG. That is, in this case, the rinse unit 25, the stamp unit 110, and the transition unit 27 are arranged in a line on the line A3 of the transport line A.
  • a transition unit 20, a pre-cleaning unit 21, a release agent coating unit 22, and a heating unit 23 are arranged in a line in order from the template loading / unloading station 2 side. Moreover, the temperature control unit 24 is arrange
  • a transfer roller 30 is arranged as shown in FIG.
  • a rail 111 extending along the Y direction (left-right direction in FIG. 15) is provided on the ceiling surface of the casing 50 as shown in FIG.
  • An arm 112 is attached to the rail 111, and a stamp M provided so that the surface of the arm 111 faces the transfer roller 30, that is, the surface T 1 of the template T, is supported.
  • the arm 112 is movable on the rail 111 by the arm driving unit 113.
  • the stamp M can move to above the template T on the conveyance roller 30.
  • the arm 112 can be moved up and down by an arm driving unit 113, and the stamp M can be pressed against the template T.
  • the surface M 1 of the stamp M is subjected to a liquid repellent treatment with a material having higher liquid repellency than the release agent S.
  • a resist solution nozzle 70 provided with a supply port (not shown) facing upward is located above the transfer roller 30 and below the rail 111.
  • a template T position detection sensor 114 is provided at a predetermined position below the conveyance roller 30. The position detection sensor 114 detects, for example, the Y direction negative direction side (left direction side in FIG. 15) of the template T conveyed on the conveyance roller 30, and outputs detection information to the control device 100. .
  • the template T is transported on the transport roller 30 in the Y direction negative direction side in FIG.
  • the conveyance roller 30 temporarily stops the conveyance of the template T and makes the template T stand by at a predetermined position.
  • the stamp M moves along the rail 111 toward the template T. Then, when the stamp M crosses over the resist solution nozzle 70 is supplied from the resist solution nozzle 70 as shown in FIG. 16 (a) on the surface M 1 of the stamp M, the resist solution R 1 on the surface M 1 of the stamp M Is applied.
  • the stamp M coated with the resist solution R 1 moves above the template T, and then the stamp M is pressed against the surface T 1 of the template T as shown in FIG.
  • the stamp M is raised, and a resist film R is formed on the template T as shown in FIG. In this way, a series of resist film R forming processes in the stamp unit 110 is completed.
  • the resist solution nozzle 70 is moved may be performed applying the resist solution R 1.
  • the rail 111 is disposed along the Y direction in FIG. 15, the rail 111 may be disposed along the X direction of FIG. 15, that is, parallel to the central axis of the transport roller 30.
  • the stamp M to which the resist solution R 1 has been applied in advance, is pressed against the template T. Therefore, the application of the resist solution R 1 to the template T and the application of the resist solution R 1 into the recess U are performed.
  • the pressing that is, the formation of the resist film R can be performed at a time. Therefore, in the stamp unit 110, the resist film R can be smoothly formed on the release agent S formed on the template T, and thereby the throughput of the film formation process of the resist film R in the template processing apparatus 1 is achieved. Can be improved.
  • the resist solution the squeegee 71 surface in contact with the R 1 is provided facing upward, in the conveying direction of the template T (Y direction negative direction in FIG. 15) may be disposed on the downstream side of the resist solution nozzle 70.
  • the templates T are individually conveyed and processed.
  • a plurality of, for example, nine templates T are held in one holder 120 and processed. May be.
  • the holder 120 is formed with a receiving portion 121 that is recessed downward to receive each template T as shown in FIG.
  • a plurality of suction ports are formed on the bottom surface of the housing part 121, and each template T is sucked and held in the housing part 121.
  • the processing station 3 can perform predetermined processing on a plurality of templates T at a time. Therefore, a resist film can be formed on more templates T in a short time, and the throughput of resist processing can be improved.
  • the template processing apparatus 1 of the above embodiment may be arranged in the imprint system 200 as shown in FIG.
  • the imprint system 200 includes an imprint unit 210 that forms a resist pattern on a wafer W as a substrate using the template T, and a plurality of, for example, 25 wafers W between the outside and the imprint system 200 in units of cassettes.
  • a wafer loading / unloading station 211 is provided as a substrate loading / unloading station for loading / unloading and loading / unloading the wafer W to / from the wafer cassette CW .
  • the imprint system 200 has a configuration in which the template processing apparatus 1, the imprint unit 210, and the wafer carry-in / out station 211 are integrally connected.
  • the transfer line B obtained by removing the transition unit 27 from the transfer line A described above is arranged in a row on the front side (X direction negative direction side in FIG. 19). That is, on the front side of the processing station 3, the transition unit 20, the pre-cleaning unit 21, the release agent coating unit 22, the heating unit 23, the temperature adjustment unit 24, the rinse unit 25, and the resist coating unit 26 are linearly arranged in a line. Has been placed.
  • a transport line C for the template T is arranged on the back side of the processing station 3 (the positive side in the X direction in FIG. 19).
  • a transition unit 220 for transferring the template T is provided at the end of the transport line C on the template loading / unloading station 2 side.
  • the plurality of transfer rollers 30 described above are provided between the imprint unit 210 and the transition unit 220, and the template T is transferred. Note that the configuration of the transition unit 220 is the same as the configuration of the transition unit 20 described above, and a description thereof will be omitted.
  • the wafer loading / unloading station 211 is provided with a cassette mounting table 230.
  • the cassette mounting table 230 can mount a plurality of wafer cassettes CW in a row in the X direction (left and right direction in FIG. 19). That is, the wafer carry-in / out station 211 is configured to be capable of holding a plurality of wafers W.
  • the wafer carry-in / out station 211 is provided with a wafer carrier 232 that can move on a conveyance path 231 extending in the X direction.
  • the wafer carrier 232 is also movable in the vertical direction and around the vertical direction ( ⁇ direction), and can carry the wafer W between the wafer cassette CW and the imprint unit 210.
  • the wafer carry-in / out station 211 is further provided with an alignment unit 233 for adjusting the orientation of the wafer W.
  • the alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W, for example.
  • the wafer carry-in / out station 211 is provided with a reversing unit 234 for reversing the front and back surfaces of the wafer W.
  • the imprint unit 210 has a casing 240 in which a loading / unloading port E1 for the template T and a loading / unloading port E2 for the wafer W are formed on the side surfaces.
  • the plurality of transfer rollers 30 described above are arranged.
  • the conveyance roller 30 in the casing 240 conveys the template T conveyed from the loading / unloading port E1 through the conveyance line B to a position above a template holding unit 241 described later, and then unloads again from the loading / unloading port E1.
  • they are arranged in a substantially U shape.
  • a conveyance guide (not shown) that supports the side surface of the template T is provided at both ends of the central axis of the conveyance roller 30, and the template T is conveyed on the conveyance roller 30 arranged in a substantially U shape.
  • the template T is prevented from dropping from the U-shaped portion.
  • a template holder 241 that holds the lower surface of the template T is provided on the bottom surface of the casing 240 as shown in FIG.
  • Template holding portion 241 a predetermined position of the rear surface T 2 of the template T has a chuck 242 for holding suction.
  • the chuck 242 is movable in the vertical direction by a moving mechanism 243 provided below the chuck.
  • the template holder 241 has a light source 244 provided below the template T held by the chuck 242.
  • the light source 244 emits light such as visible light, near ultraviolet light, and ultraviolet light.
  • the conveyance roller 30 corresponding to the upper side of the light source 244 has a shape in which the position corresponding to the upper side of the light source 244 is cut so as not to block the light from the light source 244 as shown in FIG. Light from the light source 244 is transmitted upward through the template T.
  • a wafer holder 260 is provided on the ceiling surface of the casing 240 and above the transfer roller 30 as shown in FIG. Wafer holder 260 sucks and holds the back surface of wafer W so that the surface to be processed of wafer W faces downward. That is, the wafer holding unit 260 and the transfer roller 30 are arranged so that the wafer W held by the wafer holding unit 260 and the template T placed on the transfer roller 30 face each other.
  • the wafer holder 260 can be moved in the horizontal direction by a moving mechanism 261 provided above the wafer holder 260.
  • the imprint system 200 is configured as described above. Next, an imprint process performed in the imprint system 200 will be described.
  • FIG. 22 shows the main processing flow of this imprint processing
  • FIG. 23 shows the state of the template T and wafer W in each step of this imprint processing.
  • the template T is carried into the processing station 3 from the template carry-in / out station 2 by the template carrier 12 (step H1 in FIG. 22).
  • the cleaning of the surface T 1 of the template T in FIG. 22 step H2), (step H3 of the Fig. 22) the application of the release agent S on the surface T 1, the firing of the release agent S (in FIG. 22 step H4), rinsing of the release agent S (step H5 in FIG. 22) are sequentially performed, the release agent S is formed on the surface T 1 of the template T.
  • the template T resist solution R 1 is supplied (step H6 in FIG. 22), the resist film R is formed on the release agent on S (step H7 in FIG. 22). Note that these steps H2 to H7 are the same as the steps G2 to G7 in the above embodiment, and thus detailed description thereof is omitted.
  • the template T is transported to the imprint unit 210 by the transport roller 30 and is sucked and held by the chuck 242 of the template holding unit 241.
  • the processing station 3 performs predetermined processing on the template T in the processing station 3, while conveying the template T to the imprint unit 210, the wafer loading and unloading stations 211, the wafer carrier 232, the wafer cassette C W on the cassette mounting table 230
  • the wafer W is taken out from the wafer and transferred to the alignment unit 233.
  • the alignment unit 233 adjusts the orientation of the wafer W based on the position of the notch portion of the wafer W.
  • the wafer W is reversed by the wafer reversing unit 234 and then transferred to the imprint unit 210 (step H8 in FIG. 22).
  • the wafer W transferred to the imprint unit 210 is sucked and held by the wafer holding unit 260. Subsequently, the wafer W held by the wafer holding unit 260 is moved to a predetermined position in the horizontal direction for alignment, and the template T held by the template holding unit 241 is rotated in a predetermined direction. Then, the template T is raised to the wafer W side as shown by the arrow in FIG. The template T rises to a predetermined position, and the resist film R on the template T is pressed against the wafer W. The predetermined position is set based on the height of the resist pattern formed on the wafer W. Subsequently, light is emitted from the light source 244.
  • the light from the light source 244 passes through the template T and is irradiated onto the resist film R on the wafer W as shown in FIG. 23B, whereby the resist film R is photopolymerized.
  • the transfer pattern C of the template T is transferred to the resist film R on the wafer W to form a resist pattern P (step H9 in FIG. 22).
  • the template T is lowered as shown in FIG. 23C to form a resist pattern P on the wafer W (step H10 in FIG. 22).
  • the used template T is unloaded from the imprint unit 210 to the transfer line C by the transfer roller 30 (step H11 in FIG. 22). Subsequently, a new template T is transported to the imprint unit 210 by the transport roller 30 on the transport line B, and the template T in the imprint unit 210 is replaced. When the template T is replaced, the template T is raised again to the wafer W side, and a resist pattern P is formed on the wafer W. This operation is repeated.
  • the wafer W on which the resist pattern P is formed is transferred to the wafer carrier 232, transferred from the imprint unit 210 to the wafer carry-in / out station 211, and returned to the wafer cassette CW (step H12 in FIG. 22).
  • a thin resist residual film L may remain in the concave portion of the resist pattern P formed on the wafer W.
  • the residual film L outside the template processing apparatus 1 as shown in FIG. The film L may be removed.
  • the used template T transported to the transport roller 30 on the transport line C is transported to the transition unit 220 at a speed along the transport roller 30.
  • Template T already used, which are conveyed to the transition unit 220 is passed to the template carrier 12 by the lifting pins 40, and returned to the template cassette C T.
  • the predetermined resist pattern P is continuously formed on the plurality of wafers W while the template T is continuously replaced.
  • the resist solution R 1 after supplying the resist solution R 1 on the surface T 1 release agent is deposited on the S where the template T, the resist solution R 1 by the squeegee 71 of the transfer pattern C of the template T By pressing into the recess U, the resist solution R 1 can be filled in the recess U without any gap, and the resist film R can be formed on the release agent S. Therefore, when a predetermined resist pattern is formed on the resist film on the wafer using the template T, a predetermined pattern in which the transfer pattern C of the template T is appropriately transferred can be formed on the wafer.
  • the imprint system 200 includes the template processing apparatus 1, the template T can be continuously supplied to the imprint unit 210 while the resist film R is formed on the template T in the imprint system 200. . Therefore, the predetermined resist pattern P can be continuously formed on the plurality of wafers W. This also enables mass production of semiconductor devices.
  • the template processing apparatus 300 has a configuration in which the processing units 21 to 25 constituting the release agent film forming line are omitted from the template processing apparatus 1 shown in FIG. . Further, the template processing apparatus 300 may be arranged in the imprint system 310 as shown in FIG. The other configurations of the template processing apparatus 300 and the imprint system 310 according to the present embodiment are the same as the configurations of the template processing apparatus 1 and the imprint system 200 according to the above-described embodiment, and thus description thereof is omitted. In this embodiment, the template processing apparatus 300 is arranged in the imprint system 310. However, the template processing apparatus 300 may be provided outside the imprint system 310 independently.
  • the release agent S is formed on the surface T 1 of the template T outside the template processing apparatus 300, and the release agent S is formed on the surface T 1 in the template loading / unloading station 2.
  • the filmed template T is carried in. That is, cleaning of the surface T 1 of the template T (step H2, shown in FIG. 22), the application of the release agent S on the surface T 1 (step H3 shown in FIG. 22), firing of the release agent S (FIG. 22 Step H4) and rinsing of the release agent S (Step H5 shown in FIG. 22) are performed outside the template processing apparatus 300. Then, the template processing unit 300, (step H6-shown in FIG.
  • resist solution R 1 is supplied to the release agent on the S of the template T, the resist film R is formed on the release agent on S (FIG. 22 Step H7) shown in FIG.
  • the template T on which the resist film R is formed and the wafer W are transferred to the imprint unit 210 (step H8 shown in FIG. 22).
  • the resist film R on the template T is pressed against the wafer W in the imprint unit 210, the resist film R is irradiated with light from the light source 244, and the transfer pattern C of the template T is applied to the resist film R on the wafer W. Is transferred (step H9 shown in FIG. 22).
  • a resist pattern P is formed on the wafer W (step H10 shown in FIG. 22). Since these steps H6 to H10 are the same as those in the above embodiment, detailed description thereof is omitted.
  • the template processing apparatus 300 and the imprint system 310 have the same effects as the template processing apparatus 1 and the imprint system 200 of the above embodiment, respectively. Further, according to the present embodiment, since the film forming process of the release agent S can be omitted, the processing time in the template processing apparatus 300 and the imprint system 310 can be shortened.
  • the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.
  • the present invention is not limited to this example and can take various forms.
  • the present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.
  • FPD flat panel display
  • the present invention is useful when a release agent is formed on a template having a transfer pattern formed on the surface, and a predetermined treatment is performed on the release agent. This is useful when forming a pattern.

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Abstract

L'invention concerne un dispositif de traitement de modèles qui forme un film d'un agent de démoulage sur un modèle sur la surface duquel est formé un motif de transfert, et qui forme un film de revêtement sur l'agent de démoulage. Le dispositif de traitement de modèles comprend un poste de traitement qui effectue un processus prédéterminé sur le modèle et un poste d'insertion / extraction de modèles capable de contenir une pluralité de modèles, de les insérer dans le poste de traitement et de les extraire de celui-ci. Le poste de traitement comprend : un bloc de formation de film d'agent de démoulage, qui forme un film d'agent de démoulage sur la surface du modèle; une section d'alimentation en liquide de revêtement, qui applique un liquide de revêtement sur l'agent de démoulage formant le film; et une section de remplissage en liquide de revêtement qui presse le liquide de revêtement appliqué sur l'agent de démoulage dans la partie en creux du motif de transfert du modèle.
PCT/JP2010/066948 2009-10-01 2010-09-29 Dispositif de traitement de modèles, système d'impression, procédé de traitement de modèles et support de stockage informatique Ceased WO2011040466A1 (fr)

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JP2009-229206 2009-10-01
JP2009229206A JP2011025220A (ja) 2009-06-24 2009-10-01 テンプレート処理装置、インプリントシステム、テンプレート処理方法、プログラム及びコンピュータ記憶媒体

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027595A (en) * 1998-07-02 2000-02-22 Samsung Electronics Co., Ltd. Method of making optical replicas by stamping in photoresist and replicas formed thereby
US20040149683A1 (en) * 2002-12-27 2004-08-05 Lg.Philips Lcd Co., Ltd. Method for forming pattern using printing process
JP2005045168A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd インプリント方法およびインプリント装置
JP2005153091A (ja) * 2003-11-27 2005-06-16 Hitachi Ltd 転写方法及び転写装置
JP2007173806A (ja) * 2005-12-21 2007-07-05 Asml Netherlands Bv インプリントリソグラフィ
JP2008546715A (ja) * 2005-06-17 2008-12-25 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒル ナノ粒子の製造方法、システム、及び材料
JP2009043998A (ja) * 2007-08-09 2009-02-26 Canon Inc インプリント方法およびインプリント装置
JP2009208409A (ja) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk パターン形成方法
JP2010076300A (ja) * 2008-09-26 2010-04-08 Canon Inc 加工装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6027595A (en) * 1998-07-02 2000-02-22 Samsung Electronics Co., Ltd. Method of making optical replicas by stamping in photoresist and replicas formed thereby
US20040149683A1 (en) * 2002-12-27 2004-08-05 Lg.Philips Lcd Co., Ltd. Method for forming pattern using printing process
JP2005045168A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd インプリント方法およびインプリント装置
JP2005153091A (ja) * 2003-11-27 2005-06-16 Hitachi Ltd 転写方法及び転写装置
JP2008546715A (ja) * 2005-06-17 2008-12-25 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒル ナノ粒子の製造方法、システム、及び材料
JP2007173806A (ja) * 2005-12-21 2007-07-05 Asml Netherlands Bv インプリントリソグラフィ
JP2009043998A (ja) * 2007-08-09 2009-02-26 Canon Inc インプリント方法およびインプリント装置
JP2009208409A (ja) * 2008-03-05 2009-09-17 Toyo Gosei Kogyo Kk パターン形成方法
JP2010076300A (ja) * 2008-09-26 2010-04-08 Canon Inc 加工装置

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