WO2011040189A1 - 金属微粒子分散体、導電性基板の製造方法及び導電性基板 - Google Patents
金属微粒子分散体、導電性基板の製造方法及び導電性基板 Download PDFInfo
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- WO2011040189A1 WO2011040189A1 PCT/JP2010/065265 JP2010065265W WO2011040189A1 WO 2011040189 A1 WO2011040189 A1 WO 2011040189A1 JP 2010065265 W JP2010065265 W JP 2010065265W WO 2011040189 A1 WO2011040189 A1 WO 2011040189A1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0545—Dispersions or suspensions of nanosized particles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1241—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing
- H05K3/125—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns by ink-jet printing or drawing by dispensing by ink-jet printing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/20—Direct sintering or melting
- B22F10/28—Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/30—Process control
- B22F10/32—Process control of the atmosphere, e.g. composition or pressure in a building chamber
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F12/00—Apparatus or devices specially adapted for additive manufacturing; Auxiliary means for additive manufacturing; Combinations of additive manufacturing apparatus or devices with other processing apparatus or devices
- B22F12/30—Platforms or substrates
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
- B22F2003/1054—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding by microwave
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Definitions
- the present invention relates to a metal fine particle dispersion having high dispersibility, a method for producing a conductive substrate using the metal fine particle dispersion, and a conductive substrate obtained by the production method.
- Patent Document 1 discloses a metal oxide dispersion in which a metal oxide having a particle diameter of less than 200 nm and a dispersion medium are metal oxide dispersions, and the dispersion medium contains a polyhydric alcohol and / or a polyether compound. The body has been proposed. According to Patent Document 1, by using the metal oxide dispersion, it is possible to form a metal thin film on a substrate by processing at a relatively low temperature.
- a cupric oxide fine particle dispersion in which cupric oxide nanoparticles having an average particle size of 30 nm are dispersed in ethylene glycol as a dispersion medium is placed on a slide glass in a length of 2 cm, a width of 1 cm, and a thickness.
- a copper thin film is formed at a firing temperature of 200 ° C. (see Patent Document 1 and Example 2).
- the firing temperature is 200 ° C. or higher, for example, when a low heat resistant base material such as a polyester resin is used as the base material, it cannot be used because it causes deformation or discoloration.
- the copper fine particles have good electrical conductivity and are inexpensive, so that various studies have been made on using them as members for forming a circuit such as a printed wiring board.
- a method for forming a circuit of a printed wiring board, etc. copper fine particles are dispersed in a dispersion medium, converted into ink, a circuit is formed on the substrate by screen printing or ink jet printing, and then heated to form metal fine particles.
- metal fine particles There is a method of fusing.
- ink-jet drawing is a suitable technique because a pattern can be formed without using a plate, and can be applied to on-demand pattern formation, pattern correction, and the like (see Patent Document 2).
- the dispersibility of the copper fine particles is important. That is, if the primary particles of the copper fine particles are remarkably agglomerated or the sizes and shapes of the secondary particles are irregular, defects are likely to occur when a circuit or the like is formed. Further, when a circuit is formed on a substrate by an ink jet method, there are cases where a problem occurs in the formation of a fine pattern due to clogging or ejection bending of the ejection nozzle of the head of the inkjet printer.
- the inventors of the present invention printed a coating layer containing metal or metal oxide fine particles in a pattern on a transparent substrate to form a printed layer, and then baked the printed layer.
- a method of manufacturing a conductive substrate for forming a patterned metal fine particle sintered film, wherein the baking is performed by surface wave plasma generated by application of microwave energy, and the pattern of the metal fine particle sintered film is not formed A method for manufacturing a conductive substrate was proposed, characterized in that the arithmetic mean roughness (Ra) of the substrate surface is 0.2 to 4.0 nm (Japanese Patent Application No. 2009-60312).
- the conductive substrate was excellent in conductivity and excellent in adhesion between the base material and the conductive pattern.
- an organic material is usually used as a dispersant for dispersing the metal or metal oxide fine particles contained in the coating liquid, and the organic matter remains, so that the conductivity decreases or the depth of the conductive film is increased.
- sintering did not easily proceed in the vertical direction. In order to eliminate this problem, it is necessary to perform baking for removing organic substances, and there is a problem that productivity is lowered.
- the present inventors have shown that a specific dispersant has a high effect on the dispersibility of the metal fine particles, and is easily volatilized in the subsequent firing step, and the metal fine particle firing. It has been found that the conductivity is not hindered against the bonded body.
- the metal fine particles are copper fine particles
- the specific dispersant exhibits a high effect on the dispersibility of the copper fine particles, and is easily volatilized in the subsequent firing step, thereby hindering the conductivity of the copper fine particle sintered body. I found that there was nothing.
- the present invention has been completed based on such findings.
- the metal fine particles are not particularly limited as long as the average primary particle diameter is within a specific range.
- alloy fine particles or metal oxides are used. It also includes those containing fine particles of metal compounds.
- the present invention (1) A metal fine particle dispersion containing metal fine particles, a polymer dispersant, and a dispersion medium, wherein the average primary particle diameter of the metal fine particles is 0.001 to 0.5 ⁇ m, and the polymer dispersant is a main chain. And at least one of the side chains, the polyester skeleton has at least one of a structural unit derived from valerolactone and a structural unit derived from caprolactone, and the total number of the structural units is An average value of 10 or more, and the content of the polymer dispersant is 0.1 to 100 parts by mass with respect to 100 parts by mass of the metal fine particles.
- the metal fine particle dispersion of the present invention has high dispersibility of the metal fine particles, and the dispersibility is stably maintained.
- an organic substance can be easily removed by baking at a low temperature when a conductive substrate is manufactured, a conductive substrate excellent in conductivity can be obtained because the sintering easily proceeds.
- a conductive substrate is manufactured using microwave surface wave plasma, organic substances resulting from the dispersing agent can be removed by the microwave surface wave plasma treatment, and thus baking for removing organic substances is performed separately. There is no need to provide a process, and the manufacturing process can be simplified.
- substrate using the metal fine particle dispersion of this invention the electroconductive board
- the metal fine particle dispersion of the present invention contains metal fine particles, a polymer dispersant, and a dispersion medium, the average primary particle diameter of the metal fine particles is 0.001 to 0.5 ⁇ m, and the polymer dispersant is a main chain and At least one of the side chains has a polyester skeleton, the polyester skeleton has at least one of a structural unit derived from valerolactone and a structural unit derived from caprolactone, and the total number of the structural units is The average value is 10 or more, and the content of the polymer dispersant is 0.1 to 100 parts by mass with respect to 100 parts by mass of the metal fine particles.
- the metal fine particle dispersion of the present invention contains metal fine particles, a polymer dispersant, and a dispersion medium.
- the metal particles have an average primary particle diameter of 0.001 to 0.5 ⁇ m, and the polymer dispersant is mainly used. It has a polyether skeleton in at least one of the chain and the side chain, and the content of the polymer dispersant is 0.1 to 100 parts by mass with respect to 100 parts by mass of the metal fine particles. To do.
- each constituent material constituting the metal fine particle dispersion will be described in detail.
- the metal fine particle dispersion of the present invention contains metal fine particles.
- the metal fine particles include, as described above, those containing not only metal fine particles but also alloy fine particles and metal compound fine particles such as metal oxides.
- the type of metal is not particularly limited as long as it has conductivity, but from the viewpoint of having high conductivity and easily maintaining fine particles, gold, silver, copper, nickel, platinum, Examples include palladium, tin, iron, chromium, indium, silicon, and germanium. Among these, gold, silver, copper, and nickel are preferable, and copper and silver are preferable in consideration of conductivity and economy.
- One kind of these metals may be used alone, or two or more kinds may be mixed or alloyed.
- the metal compound examples include metal oxide and metal hydroxide.
- the silver compound is preferably silver oxide, an organic silver compound or the like, and the copper compound is preferably cuprous oxide, cupric oxide or a mixture thereof.
- a copper compound is particularly preferable, and a copper oxide (cuprous oxide, cupric oxide, or a mixture thereof) is particularly preferable.
- a physical method obtained by pulverizing metal powder by a mechanochemical method such as a CVD method, a vapor deposition method, a sputtering method, a thermal plasma method, or a laser method. It can be produced by a chemical dry method; a method called a chemical wet method such as a thermal decomposition method, a chemical reduction method, an electrolysis method, an ultrasonic method, a laser ablation method, a supercritical fluid method, or a microwave synthesis method.
- a vapor deposition method fine particles are produced by bringing a vapor of a metal heated and brought into contact with a low vapor pressure liquid containing a dispersant under a high vacuum.
- the fine particles are protected with a water-soluble polymer such as polyvinylpyrrolidone or a protective agent such as a graft copolymer polymer, a surfactant, a thiol group or an amino acid that interacts with a metal. It is preferable to coat with a compound having a group, a hydroxyl group and a carboxyl group.
- the pyrolyzate or metal oxide of the raw material may protect the particle surface and contribute to dispersibility.
- the reducing agent or the like may act as a protective agent for the fine particles as it is.
- a surface treatment of the fine particles may be performed, or a dispersant composed of a polymer, an ionic compound, a surfactant, or the like may be added.
- the average primary particle diameter of the fine particles is in the range of 0.001 to 0.5 ⁇ m. Within this range, in the conductive substrate produced using the metal fine particle dispersion, the fusion of the metal fine particles sufficiently proceeds and very high conductivity can be obtained. From the above viewpoint, the average primary particle diameter of the metal fine particles is more preferably in the range of 0.002 to 0.2 ⁇ m. In addition, the said average primary particle diameter is measured using the electron microscope, and is normally computed by statistical processing from the observation image measured with the transmission electron microscope (TEM) or the scanning transmission electron microscope (STEM).
- TEM transmission electron microscope
- STEM scanning transmission electron microscope
- FIG. 1 shows a specific apparatus preferably used in the manufacturing method.
- the chamber 1 has a drum shape that rotates around a fixed shaft 2, and has a structure in which the inside of the chamber 1 is evacuated to a high vacuum through the fixed shaft 2.
- the chamber 1 contains the low vapor pressure liquid in which the dispersant used in the present invention is dissolved or the dispersant used in the present invention.
- the low vapor pressure liquid is placed on the inner wall of the chamber 1 by the rotation of the drum-shaped chamber 1.
- a heating container 6 for holding the metal 5 is fixed inside the chamber 1, a heating container 6 for holding the metal 5 is fixed.
- the metal 5 is heated to a predetermined temperature, for example, by flowing a current through a resistance wire, and is released into the chamber 1 as a gas.
- the entire outer wall of the chamber 1 is cooled by a water flow 7.
- the atoms 9 released from the heated metal 5 into the vacuum are taken in from the surface of the film 4 of the low vapor pressure liquid 3 to form metal fine particles 10.
- the low vapor pressure liquid 3 in which the metal fine particles 10 are dispersed is transported into the low vapor pressure liquid 3 at the bottom of the chamber 1 with the rotation of the chamber 1, and at the same time, a new “low vapor pressure liquid 3.
- the membrane 4 is supplied to the upper part of the chamber 1.
- the low vapor pressure liquid 3 at the bottom of the chamber 1 becomes a dispersion in which the metal 5 is dispersed at a high concentration.
- the method of making the metal 5 into gas is not particularly limited.
- the heating temperature is not particularly limited as long as it is a temperature sufficient to achieve a gaseous state, but is preferably 400 to 2000 ° C, more preferably 600 to 1800 ° C, further preferably 800 to 1700 ° C, and 600 to 1600 ° C. Is particularly preferable, and 800 to 1200 ° C. is more preferable.
- the mechanism of stably obtaining a dispersion composed of fine metal particles with an extremely small average primary particle diameter obtained by conducting an electron microscope observation with this preparation method has not yet been fully elucidated.
- the metal gas is directly taken into the low vapor pressure liquid without aggregating in the gas phase, and when the aggregation occurs in the low vapor pressure liquid and has a certain particle size, the aggregated particles are It is thought that it is surrounded by the dispersant used in the invention and is stabilized as nanoparticles. At that time, it is considered that the dispersant used in the present invention wraps the aggregated particles more quickly, suppresses the association with each other more strongly, and stabilizes more as nanoparticulates.
- a low vapor pressure liquid is used as a dispersion medium.
- a dispersion medium that is not a low vapor pressure liquid (hereinafter sometimes referred to as other dispersion medium).
- the dispersion medium that is not a low vapor pressure liquid is preferably a non-polar dispersion medium (for example, a liquid that is not compatible with water in an arbitrary ratio) instead of the low vapor pressure liquid as described above.
- a dispersion medium (other dispersion medium) that is not a low vapor pressure liquid can be appropriately selected according to various uses of the metal fine particle dispersion.
- Other dispersion media include solvents or dispersion media for production of circuit materials, conductive films, electromagnetic wave shielding materials, etc., and general-purpose solvents or dispersion media generally used for inks, paints, catalyst materials, medical use, etc. Can be mentioned.
- the other dispersion medium include, for example, aliphatic hydrocarbons such as normal hexane, cyclohexane, normal pentane, normal heptane, octane, decane, dodecane, tetradecane, and hexadecane; aromatic hydrocarbons such as toluene and xylene.
- aliphatic hydrocarbons such as normal hexane, cyclohexane, normal pentane, normal heptane, octane, decane, dodecane, tetradecane, and hexadecane
- aromatic hydrocarbons such as toluene and xylene.
- Ethers such as diethyl ether and diphenyl ether; glycol-based dispersion media such as propylene glycol monoethyl ether, propylene glycol monoethyl ether acetate and dipropylene glycol monoethyl ether; ketones such as methyl ethyl ketone, methyl isobutyl ketone, acetyl acetone and cyclohexanone Esters such as butyl butyrate; 2-dimethylaminoethanol, 2-diethylaminoethanol, 2-dimethylaminoisopropanol, 3-diethyl Amino-1-propanol, 2-dimethylamino-2-propanol, 2-methylamino ethanol, 4-dimethylamino-1-amino group-containing alcohols such as butanol can be a preferably exemplified. These may be used alone or in combination of two or more.
- Dispersion medium replacement method Examples of the method for substituting the low vapor pressure liquid with another dispersion medium include known solvent substitution / dispersion medium substitution methods.
- a particularly preferable dispersion medium replacement method is (i) precipitation of metal fine particles by adding to the metal fine particle dispersion a poor solvent that is compatible with a low vapor pressure liquid that is a dispersion medium of the metal fine particle dispersion. (Ii) A dispersion medium replacement method having a process of removing a low vapor pressure liquid as a supernatant.
- a dispersion medium replacement method having a process of removing only the mixture of the low vapor pressure liquid and the poor solvent which substantially becomes a supernatant by adding the poor solvent to the metal fine particle dispersion by decantation or the like is preferable.
- the poor solvent used in the above method is one that is incompatible with the dispersant used in the present invention at an arbitrary ratio, that is, one that acts as a poor dispersion medium for metal fine particles having the dispersant used in the present invention on the surface or the like.
- it is preferably compatible with the low vapor pressure liquid in the metal fine particle dispersion at a certain ratio.
- decantation and the like can be performed, and the dispersion medium can be suitably replaced from the low vapor pressure liquid to the other dispersion medium described above. Because it is excellent.
- the boiling point and vapor pressure of the poor solvent are not particularly limited, but are preferably low boiling point and high vapor pressure.
- the boiling point of the poor solvent at 1 atm is preferably 180 ° C. or lower, more preferably 150 ° C. or lower, and particularly preferably 100 ° C. or lower.
- Examples of such a poor solvent include alcohol-based, ketone-based, ether-based, ester-based liquids containing oxygen atoms, and the like. Of these, alcohols having 3 to 6 carbon atoms are preferable, and alcohols having 3 to 5 carbon atoms are particularly preferable. Specific examples include n-propanol, iso-propanol (IPA), butanol, pentanol, hexanol and the like. As the ketone system, a ketone having 2 to 8 carbon atoms is preferable, and a ketone having 2 to 6 carbon atoms is particularly preferable.
- the ether type is preferably an ether having 4 to 8 carbon atoms, particularly preferably an ether having 4 to 6 carbon atoms.
- Specific examples include methyl ethyl ether, diethyl ether, furan, and tetrahydrofuran.
- an ester having 3 to 8 carbon atoms is preferable, and an ester having 3 to 6 carbon atoms is particularly preferable.
- Specific examples include methyl acetate, ethyl acetate, propyl acetate, and butyl acetate.
- the above poor solvent even if the number of carbon atoms is too small or too large, the above requirement may not be satisfied. In particular, when the carbon number is too small, it may not be compatible with the low vapor pressure liquid. On the other hand, when it is too large, the boiling point described later may be too high.
- the poor solvent in the present invention satisfies the above requirements and is easy to decant, and from the viewpoint of being easily redispersed when "other dispersion medium” is added after decantation, among them, alcohol-based or ester-based is used. Is particularly preferred.
- copper fine particles are particularly preferable among those exemplified as a preferable metal type.
- the copper fine particles have high conductivity, can easily maintain the fine particles, and are excellent in economy and migration resistance in addition to conductivity.
- the copper fine particles are in a metal state, but also include fine particles whose surfaces are oxidized.
- the average primary particle diameter is preferably in the range of 0.001 to 0.5 ⁇ m. Within this range, in the conductive substrate produced using the dispersion of copper fine particles, the fusion of the copper fine particles sufficiently proceeds and very high conductivity can be obtained.
- the average primary particle size of the copper fine particles is small, the fusion between the copper fine particles is likely to proceed sufficiently, but if it is too small, the surface is likely to be oxidized, difficult to sinter, and more likely to aggregate and disperse. Sexuality decreases.
- the average primary particle diameter of the copper fine particles is more preferably in the range of 0.002 to 0.2 ⁇ m.
- the said average primary particle diameter is measured using the electron microscope, and is normally computed by statistical processing from the observation image measured with the transmission electron microscope (TEM) or the scanning transmission electron microscope (STEM).
- a physical method obtained by pulverizing metal powder by mechanochemical method such as CVD method, vapor deposition method, sputtering method, thermal plasma method, laser method, etc. It can be produced by a chemical dry method; a method called a chemical wet method such as a thermal decomposition method, a chemical reduction method, an electrolysis method, an ultrasonic method, a laser ablation method, a supercritical fluid method, or a microwave synthesis method.
- a chemical wet method such as a thermal decomposition method, a chemical reduction method, an electrolysis method, an ultrasonic method, a laser ablation method, a supercritical fluid method, or a microwave synthesis method.
- fine particles are produced by bringing a vapor of a metal heated and brought into contact with a low vapor pressure liquid containing a dispersant under a high vacuum.
- the present invention is preferably produced by mixing a divalent copper oxide and a reducing agent in a liquid medium in the presence of a complexing agent and a protective colloid, which is one of the chemical reduction methods described above.
- the divalent copper oxide has a copper valence of 2 and includes cupric oxide, cupric hydroxide, and mixtures thereof.
- the divalent copper oxide may contain impurities such as monovalent copper oxide and other metals as long as the effects of the present invention are not impaired. It is preferable that it is not substantially contained.
- the complexing agent used in the method for preparing the copper fine particles is a compound in which a donor atom of a ligand of the complexing agent and copper ion or metallic copper are bonded to form a copper complex compound.
- a donor atom nitrogen, oxygen, and sulfur are mentioned suitably, These may be single 1 type and may be used in combination of 2 or more type. More specifically, examples of the complexing agent in which nitrogen is a donor atom include amines, nitrogen-containing heterocyclic compounds such as imidazole and pyridine, nitriles, cyanide compounds, ammonia, ammonium compounds, and oximes.
- Examples of the complexing agent in which oxygen is a donor atom include carboxylic acids, ketones, aldehydes, alcohols, quinones, ethers, phosphoric acid, phosphoric acid compounds, sulfonic acids, and sulfonic acid compounds. .
- complexing agents in which sulfur is a donor atom include aliphatic thiols, alicyclic thiols, aromatic thiols, thioketones, thioethers, polythiols, thiocarbonates, sulfur-containing heterocyclic compounds, thiocyanates , Isothiocyanates, inorganic sulfur compounds and the like.
- complexing agents having two or more donor atoms include amino acids, aminopolycarboxylic acids, alkanolamines, nitroso compounds, nitrosyl compounds having nitrogen and oxygen; mercapto having sulfur and oxygen.
- the compounding amount of the complexing agent is about 0.001 to 20 parts by mass with respect to 100 parts by mass of the divalent copper oxide. Within this range, high copper dispersibility can be obtained. In addition, by reducing the compounding amount of the complexing agent within this range, it is possible to reduce the primary particle size of the copper fine particles, while increasing the compounding amount increases the primary particle size of the copper fine particles. be able to. In the present invention, the compounding amount of the complexing agent is more preferably in the range of 0.05 to 15 parts by mass with respect to 100 parts by mass of the divalent copper oxide.
- the protective colloid used in the method for preparing copper fine particles acts as a dispersion stabilizer for the produced copper fine particles, and various types can be used.
- protein systems such as gelatin, gum arabic, casein, sodium caseinate, and ammonium caseinate; natural polymers such as starch, dextrin, agar, and sodium alginate; cellulose systems such as hydroxyethyl cellulose and methyl cellulose; polyvinyl alcohol; Examples thereof include vinyl type such as polyvinyl pyrrolidone; acrylic acid type such as sodium polyacrylate and ammonium polyacrylate; polyethylene glycol and the like.
- a protein-based protective agent is particularly preferable from the viewpoint of dispersion stability.
- the blending amount of the protective colloid is preferably in the range of 1 to 100 parts by mass, more preferably in the range of 2 to 50 parts by mass with respect to 100 parts by mass of the divalent copper oxide. Within this range, the produced copper fine particles are easily dispersed and stabilized.
- reducing agent As the reducing agent used in the method for preparing the copper fine particles, it is preferable to use a reducing agent having a strong reducing power so that a monovalent copper oxide is not generated during the reduction reaction.
- a reducing agent having a strong reducing power so that a monovalent copper oxide is not generated during the reduction reaction.
- hydrazine-based reducing agents such as hydrazine and hydrazine compounds, sodium borohydride, sodium sulfite, sodium hydrogen sulfite, sodium thiosulfate, sodium nitrite, sodium hyponitrite, phosphorous acid, sodium phosphite, Examples include hypophosphorous acid and sodium hypophosphite.
- hydrazine-based reducing agents are preferred because of their strong reducing power.
- the amount of the reducing agent used is preferably in the range of 0.2 to 5 mol with respect to 1 mol of copper contained in the divalent copper oxide. When the amount is 0.2 mol or more, the reduction proceeds sufficiently to obtain copper fine particles. On the other hand, when the amount is 5 mol or less, copper fine particles having a desired particle diameter can be obtained. From the above viewpoint, the preferred amount of reducing agent used is in the range of 0.3 to 2 moles with respect to 1 mole of copper contained in the divalent copper oxide.
- an aqueous solvent such as water or an organic solvent such as alcohol can be used as the medium for preparing the copper fine particles, but an aqueous solvent is more preferable.
- the reaction temperature for preparing the copper fine particles is preferably in the range of 10 ° C. to the boiling point of the liquid medium, and preferably in the range of 40 to 95 ° C. from the viewpoint of obtaining fine copper fine particles, and 80 to 95 A range of ° C is more preferred.
- the pH is preferably in the range of 3 to 12, and the reaction time is usually about 10 minutes to 6 hours, although it varies depending on the concentration of the reducing agent.
- the polymer dispersant used in the present invention is characterized by having a predetermined polyester skeleton or polyether skeleton in at least one of the main chain and the side chain.
- These polymer dispersants are easily decomposed by firing at a low temperature or irradiation with microwave surface wave plasma due to their skeletal structure, and organic matter hardly remains, so that sufficient conductivity can be obtained. is there.
- those having a polyether skeleton in at least one of the main chain and the side chain are preferred because they are easily decomposed by microwave surface wave plasma.
- the polymer dispersant used in the present invention preferably has a comb structure having one or more side chains (branched portions) from the viewpoint of dispersion stability of the metal fine particle dispersion.
- the polymer dispersant having such a structure can provide excellent dispersion stability even if only a small amount is used, and can obtain a metal fine particle dispersion excellent in sinterability at low temperatures. This is because excellent conductivity can be imparted to the conductive substrate obtained by using the material.
- the molecular weight of the polymer dispersant is preferably in the range of 500 to 20000 in terms of polystyrene-based weight average molecular weight from the viewpoint of dispersibility of the metal fine particles.
- the weight average molecular weight is a value measured by GPC (gel permeation chromatography).
- 2 or more types of polymer dispersing agents can also be mixed and used.
- the polyester skeleton is a structural unit (unit) derived from valerolactone and a structural unit derived from caprolactone.
- R 1 is a linear or branched alkyl group having 1 to 18 carbon atoms, a phenyl group, a phenyl group substituted with a linear or branched alkyl group having 1 to 18 carbon atoms
- R 2 is a phosphoric acid group or a sulfonic acid group
- R 2 is a linear or branched alkylene group having 2 to 8 carbon atoms
- m is a number of 1 to 20.
- a phosphate group means what is shown by the following general formula (a), and includes a phosphate ester group.
- a sulfonic acid group means what is shown by the following general formula (b), and includes a sulfonic acid ester group.
- R is hydrogen, a linear or branched alkyl group having 1 to 18 carbon atoms, a phenyl group, or a phenyl group substituted with a linear or branched alkyl group having 1 to 18 carbon atoms.
- the compound represented by the general formula (I) is obtained by synthesizing a monocarboxylic acid as a starting material and subjecting the lactone represented by the general formula (II) to a ring-opening addition reaction.
- R 3 represents a linear or branched alkylene group having 2 to 8 carbon atoms.
- R 3 is more preferably an alkylene group having 2 to 6 carbon atoms, such as ⁇ -caprolactone, ⁇ -propiolactone, and ⁇ -valerolactone.
- ⁇ -caprolactone ⁇ -propiolactone
- ⁇ -valerolactone ⁇ -valerolactone
- one of these lactones may be used alone or a mixture of a plurality of lactones may be used.
- At least one of ⁇ -caprolactone and ⁇ -valerolactone may be used. Including one.
- R 4 is a linear or branched alkyl group having 1 to 18 carbon atoms, a phenyl group, a phenyl group substituted with a linear or branched alkyl group having 1 to 18 carbon atoms, phosphorus An acid group or a sulfonic acid group
- R 5 represents a linear or branched alkylene group having 2 to 4 carbon atoms
- n represents a number of 1 to 30.
- the phosphoric acid group and the sulfonic acid group are the same as described above.
- the phosphoric acid group is represented by the general formula (a), and the sulfonic acid group is represented by the general formula (b). Is preferred.
- the compound represented by the general formula (III) is synthesized by using an alcohol as a starting material, and is obtained by subjecting an alkylene oxide represented by the general formula (IV) to a ring-opening addition reaction.
- R ⁇ 6 > is hydrogen, a methyl group, or an ethyl group
- R ⁇ 7 > is hydrogen or a methyl group.
- R 6 is an ethyl group
- R 7 is hydrogen.
- ethylene oxide and propylene oxide are particularly preferable. In the ring-opening addition reaction, one of these alkylene oxides may be used alone, or a mixture of a plurality of alkylene oxides may be used, but it contains at least one of ethylene oxide and propylene oxide. Is preferred.
- a polymer dispersant having a polyether skeleton in the main chain at least one of polyethylene glycol derived from ethylene oxide and polypropylene glycol derived from propylene oxide is used as a structural unit (unit). It is preferable to have.
- the total number of polyethylene glycol units and polypropylene glycol units (corresponding to n) is preferably 10 or more as an average value from the viewpoint of dispersibility of the metal fine particles, and particularly preferably in the range of 10 to 18. .
- the main chain is preferably a polyamine or polyimine skeleton.
- the structures of the polyester skeleton and the polyether skeleton constituting the side chain are the same as the polyester skeleton and the polyether skeleton constituting the main chain.
- the skeleton is preferably a polyallylamine as represented by the following general formula (V).
- R 8 and R 9 are each independently either hydrogen or a polymerization initiator residue, and R 10 is hydrogen or a group represented by the following general formula (VI).
- p is 2 to 20, and more preferably 2 to 8.
- at least one of p R 10 is represented by the general formula (VI) and R 11 has a group represented by the following formula (VII).
- R 11 is a linear or branched, saturated or unsaturated monovalent hydrocarbon group having 1 to 20 carbon atoms or a group represented by the following formula (VII).
- R 12 is a linear or branched saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms
- R 13 is a linear or branched alkylene group having 2 to 8 carbon atoms
- q represents 1 to 20 numbers.
- the polyester skeleton in the general formula (VII) preferably has at least one of a structural unit (unit) derived from valerolactone and a structural unit (unit) derived from caprolactone.
- the total number (q) of the structural units derived from the above and the structural units (units) derived from caprolactone is preferably 10 or more, particularly 10 A range of ⁇ 18 is preferred.
- the skeleton is preferably a polyethyleneimine represented by the following general formula (VIII).
- R 14 and R 15 are each independently hydrogen or a polymerization initiator residue
- R 16 and R 17 are each hydrogen or a group represented by the following general formula (IX).
- r is 2 to 20, and more preferably 2 to 8.
- at least one of R 16 R 16 is represented by the general formula (IX)
- R 18 has a group represented by the following formula (X).
- R 18 is a linear or branched, saturated or unsaturated monovalent hydrocarbon group having 1 to 20 carbon atoms or a group represented by the following formula (X).
- R 19 is a linear or branched saturated or unsaturated divalent hydrocarbon group having 1 to 20 carbon atoms
- R 20 is a linear or branched alkylene group having 2 to 8 carbon atoms
- s represents a number from 1 to 20.
- the polyester skeleton in the general formula (X) preferably has at least one of a structural unit (unit) derived from valerolactone and a structural unit (unit) derived from caprolactone, as described above.
- the total number of structural units (units) derived from caprolactone and caprolactone (s) is preferably 10 or more as an average value from the viewpoint of dispersibility of the metal fine particles, particularly 10 A range of ⁇ 18 is preferred.
- the content of the polymer dispersant in the metal fine particle dispersion of the present invention is preferably in the range of 0.1 to 100 parts by mass with respect to 100 parts by mass of the metal fine particles.
- the content of the polymer dispersant is more preferably in the range of 1 to 50 parts by mass.
- a dispersion medium used for the metal fine particle dispersion of the present invention water and / or an organic dispersion medium can be used.
- the organic dispersion medium include aliphatic hydrocarbons such as hexane, decane, dodecane, and tetradecane; alicyclic hydrocarbons such as cyclohexane; aromatic hydrocarbons such as toluene and xylene; ketones such as acetone, methyl ethyl ketone, and methyl isobutyl ketone Esters such as methyl acetate, ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate; methanol, ethanol, n-propanol, isopropanol, n-butanol, ethylene glycol, diethylene glycol, triethylene glycol, propylene glycol, glycerin, etc.
- Alcohols tetrahydrofuran, dioxane, ethylene glycol monomethyl ether (methyl cellosolve), ethylene glycol monoethyl ether (ethyl cellosolve), ethylene glycol And the like ethers such as Bruno ether (butyl cellosolve).
- aliphatic hydrocarbons, aromatic hydrocarbons, ketones, esters and alcohols are preferable from the viewpoint of dispersibility of the metal fine particles.
- these dispersion media can also be used individually by 1 type or in mixture of 2 or more types.
- the metal fine particle dispersion in the present invention preferably has a solid content concentration in the range of 5% by mass to 90% by mass, and the amount of the dispersion medium is determined so as to be in this range. Sufficient electroconductivity is acquired as solid content concentration is 5 mass% or more, and the dispersibility of a metal microparticle is ensured as it is 90 mass% or less. From the above viewpoint, the solid content concentration in the metal fine particle dispersion is more preferably in the range of 10 to 50% by mass.
- a method for producing a metal fine particle dispersion a method in which a polymer dispersant is added in advance to a dispersion medium or a liquid medium used when synthesizing metal fine particles, A method of adding a polymer dispersing agent when dispersing in the above) is preferred.
- fine-particles in a polymer dispersing agent is also mentioned. In this case, it can be dispersed by media dispersion such as a bead mill, medialess dispersion utilizing ultrasonic waves or fluid pressure, and the like.
- a method for producing a conductive substrate using the fine particle dispersion will be described in detail.
- a coating layer containing the above-mentioned metal fine particle dispersion is printed on a substrate in a pattern to form a printed layer, and the printed layer is baked to form a patterned metal fine particle sintered film.
- the patterned metal fine particle sintered film may be hereinafter referred to as a “conductive pattern”.
- the term “conductive pattern” refers to a case where the metal fine particles have conductivity in a so-called metal state.
- the metal fine particles are a metal compound such as a metal oxide
- a sintered metal fine particle film having conductivity can be obtained by firing in an atmosphere of a reducing gas such as hydrogen.
- the base material used in the present invention is not particularly limited as long as it is used for a conductive substrate.
- Inorganic materials such as glass, alumina, and silica can be used, and polymer materials and paper can also be used.
- the base material is not damaged, and a special material having high heat resistance such as high strain point glass is used. Glass can be used, and even ordinary soda lime glass having low heat resistance can be used.
- a polymer material such as plastic or paper can be used as a base material, and is particularly useful in that a resin film can be used.
- polyimide polyimide, polyamide, polyamideimide, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyphenylene sulfide, polyether ether ketone, polyether sulfone, polycarbonate, polyether imide, epoxy resin
- PET polyethylene terephthalate
- PEN polyethylene naphthalate
- polyphenylene sulfide polyether ether ketone
- polyether sulfone polycarbonate
- polyether imide epoxy resin
- examples thereof include phenol resins, glass-epoxy resins, polyphenylene ethers, acrylic resins, polyolefins such as polyethylene and polypropylene, and liquid crystalline polymer compounds.
- the thickness of the substrate is not particularly limited, but in the case of a plastic substrate such as a resin film, it is usually in the range of 10 to 300 ⁇ m. When the thickness is 10 ⁇ m or more, deformation of the base material is suppressed when forming the conductive pattern, which is preferable in terms of shape stability of the formed conductive pattern. Moreover, when it is 300 micrometers or less, when winding-up processing is performed continuously, it is suitable at the point of a softness
- the coating liquid used in the production method of the present invention is characterized by containing the above-mentioned metal fine particle dispersion.
- the metal fine particle dispersion of the present invention has high dispersibility and high stability by using a specific polymer dispersant.
- the ejection stability is high and good patterning aptitude is obtained.
- a dispersion medium may be further added to the coating solution in order to improve the coating suitability.
- the dispersion medium used here may be the same as or different from the dispersion medium used in the production process of the metal fine particle dispersion.
- additives such as a surfactant, a plasticizer, and an antifungal agent can be appropriately added to the coating solution.
- a low molecular weight dispersant may be blended.
- the surfactant is suitably blended because it can further enhance the dispersibility of the metal fine particles and improve the coating property.
- Specific examples of surfactants include cationic surfactants such as quaternary ammonium salts; anionic surfactants such as carboxylates, sulfonates, sulfate esters, and phosphate ester salts; ether types and esters. Type, ether ester type nonionic surfactants and the like.
- a polyester resin, an acrylic resin, a urethane resin, or the like may be added to the coating liquid as a resin binder for the purpose of enhancing the film forming property, imparting printability, and enhancing dispersibility.
- you may add a viscosity modifier, a surface tension modifier, a stabilizer, etc. as needed.
- the solid content concentration in the coating solution of the present invention is appropriately determined according to the method of coating on the substrate.
- the solid content concentration is adjusted to 5 to 60% by mass. Within this range, the viscosity is sufficiently low and printing of the coating liquid on the substrate is easy.
- the method for printing a coating liquid on a substrate and forming a printing layer is not particularly limited, and gravure printing, screen printing, spray coating, spin coating, comma coating, bar coating, knife coating, offset printing, flexographic printing, Methods such as ink jet printing and dispenser printing can be used.
- gravure printing, flexographic printing, screen printing, and inkjet printing are preferable from the viewpoint that fine patterning can be performed.
- the metal fine particle dispersion of the present invention is excellent in dispersibility, the inkjet discharge nozzle is not clogged or is not bent, and is suitable for inkjet printing.
- productivity can be remarkably improved as compared with a conventional method using a photoresist. it can.
- the coating solution on the substrate may be dried by a normal method after printing.
- the film thickness of the printed portion after drying can be controlled by appropriately changing the coating amount and the average primary particle diameter of the metal fine particles according to the application etc., but is usually in the range of 0.01 to 100 ⁇ m, preferably 0. The range is from 1 to 50 ⁇ m.
- Firing in the production method of the present invention may be referred to as surface wave plasma (hereinafter referred to as “microwave surface wave plasma”) generated by raising the temperature to a temperature at which metal fine particles sinter or by applying microwave energy. )).
- microwave surface wave plasma generated by raising the temperature to a temperature at which metal fine particles sinter or by applying microwave energy.
- microwave surface wave plasma By using microwave surface wave plasma for firing, thermal damage to the substrate can be reduced.
- microwave surface wave plasma for firing, thermal damage to the substrate can be reduced.
- it can prevent that the surface of a base material roughens, when using a transparent base material, transparency of base materials other than the part in which the conductive pattern was formed is ensured, and it has high transparency.
- a conductive substrate is obtained.
- the baking treatment using the microwave surface wave plasma can be performed over a large area and can be performed in a short time, so that productivity is extremely high.
- the firing using the microwave surface wave plasma is preferably performed in an inert gas atmosphere or a reducing gas atmosphere from the viewpoint of the conductivity of the metal fine particle sintered film.
- the microwave surface wave plasma is preferably generated under a reducing gas atmosphere, and particularly preferably generated under a hydrogen gas atmosphere.
- Examples of the reducing gas forming the reducing atmosphere include gases such as hydrogen, carbon monoxide, and ammonia, or a mixed gas thereof.
- gases such as hydrogen, carbon monoxide, and ammonia, or a mixed gas thereof.
- hydrogen gas is preferable in that there are few byproducts.
- the reducing gas has an effect that plasma is easily generated when an inert gas such as nitrogen, helium, argon, neon, krypton, or xenon is mixed.
- the atmosphere is 50 to 200 ° C. in an atmosphere containing oxygen. It is preferable to bake at a temperature of about 10 minutes to 2 hours. By this firing, organic substances are oxidatively decomposed and removed, and the sintering of the metal fine particles is promoted in the microwave surface wave plasma treatment.
- the firing treatment can be performed at a lower temperature, or the firing treatment prior to the microwave surface wave plasma treatment can be omitted. .
- the baking treatment is performed under a temperature condition of 165 ° C. or lower in order to suppress heat deformation. It is preferable.
- a step of baking at 165 ° C. or less in an atmosphere containing oxygen and (ii) a microwave surface wave plasma in an inert gas atmosphere and / or a reducing gas atmosphere. Firing is preferably performed in two firing steps, a step of firing at 165 ° C. or lower. This is because a denser conductive film can be obtained.
- the oxygen concentration in an atmosphere containing oxygen is not particularly limited, but the oxygen concentration is preferably 0.1 to 30%. That is, the atmosphere containing oxygen includes an atmosphere of air. If the oxygen concentration is 0.1% or more, decomposition of organic substances is promoted, and if it is 30% or less, safety is high, which is preferable.
- the added polymer dispersant is adsorbed to the metal fine particles in some form. By firing such a dispersion in the air or in an atmosphere containing oxygen, the adsorptive power is reduced, and further, firing is performed using a microwave surface wave plasma in an inert gas atmosphere or a reducing gas atmosphere. As a result, the decomposition of the polymer dispersant is promoted, so that a dense conductive film can be obtained.
- Method for generating microwave surface wave plasma There is no particular limitation on the method of generating the microwave surface wave plasma, for example, an electrodeless electrode that supplies microwave energy from the irradiation window of the baking processing chamber in a reduced pressure state and generates surface wave plasma along the irradiation window in the baking processing chamber.
- Plasma generating means can be used.
- microwave energy having a frequency of 2450 MHz is supplied from an irradiation window of a baking processing chamber, and an electron temperature is about 1 eV or less and an electron density is about 1 ⁇ 10 11 to 1 ⁇ 10 13 in the processing chamber.
- a cm -3 microwave surface wave plasma can be generated.
- the microwave energy is generally an electromagnetic wave having a frequency of 300 MHz to 3000 GHz.
- an electromagnetic wave of 2450 MHz is used.
- the frequency range is 2450 MHz / ⁇ 50 MHz due to the accuracy error of the magnetron which is a microwave oscillator.
- microwave surface wave plasma has the characteristics of high plasma density and low electron temperature, and the printing layer can be fired at a low temperature in a short time. Can be formed.
- the microwave surface wave plasma is irradiated with plasma having a uniform density within the surface with respect to the processing surface. As a result, compared to other firing methods, it is less likely to form a non-uniform film, such as the partial sintering of particles in the plane, and to prevent grain growth, which is very A dense and smooth film can be obtained.
- contamination of impurities derived from the electrode can be prevented, and damage to the processing material due to abnormal discharge can be prevented.
- the microwave surface wave plasma has a low electron temperature, it is presumed that the ability to etch the substrate is small, and damage to the plastic substrate can be reduced.
- the microwave surface wave plasma is suitable for enhancing the adhesion of the metal fine particle sintered film to the resin base material. This is presumably because the microwave surface wave plasma easily generates polar functional groups such as hydroxyl groups and carboxyl groups at the interface with the metal fine particle sintered film.
- the microwave surface wave plasma easily generates polar functional groups such as hydroxyl groups and carboxyl groups at the interface with the metal fine particle sintered film.
- the plasma of the gas containing the reducing gas reacts with the ester bond of the base material, and is modified to the interface side of the base material. It is presumed that the adhesiveness at the interface between the metal fine particle sintered film and the base material is improved because the quality is increased and many reactive groups with high polarity are generated.
- the method of the present invention does not affect the interface between the base material and the conductive pattern. Is excellent in that it is smooth and has high adhesion.
- the metal fine particle sintered film formed by the firing treatment with the microwave surface wave plasma has a thickness of about 10 nm to 50 ⁇ m, preferably about 50 nm to 5 ⁇ m, and more preferably 100 to 2000 nm.
- the conductive substrate of the present invention is formed by printing a coating liquid containing a metal fine particle dispersion in a pattern on a base material to form a printed layer, and baking the printed layer to form a patterned layer.
- This is a conductive substrate formed by forming a metal fine particle sintered film.
- the volume resistivity of the metal fine particle sintered film pattern (conductive pattern) in the conductive substrate of the present invention is preferably 1.0 ⁇ 10 ⁇ 4 ⁇ ⁇ cm or less.
- the conductive substrate of the present invention is a conductive substrate having a patterned metal fine particle sintered film provided with good adhesion on a base material, and having excellent reliability and conductivity.
- Such an electronic member using the conductive substrate of the present invention can be effectively used for an electromagnetic shielding film having a low surface resistance, a conductive film, a flexible printed wiring board, and the like.
- Dispersant Structure Specifying Method As a method for specifying the structure of the polymer dispersant used in the present invention, the following method was used. As measurement pretreatment, the sample concentration was diluted to 0.5% with tetrahydrofuran (THF), allowed to stand and filtered, and then subjected to gel permeation chromatography (measuring device: “HLC8220GPC” manufactured by Tosoh Corporation). The molecular weight in terms of polystyrene was measured to identify the number of side chains.
- THF tetrahydrofuran
- the metal fine particle dispersion and the conductive substrate obtained in this example were evaluated by the following methods.
- (1) Particle size measurement and dispersibility evaluation observation with a scanning transmission electron microscope (STEM))
- SEM scanning electron microscope “S-4800” manufactured by Hitachi High-Technologies Corporation
- the metal fine particles and metal fine particle dispersion were observed at an accelerating voltage of 30 kV and an emission current of 10 ⁇ A, based on an observation image by STEM attached to the apparatus. The body was observed and the dispersibility was evaluated.
- the average primary particle size of the metal fine particles was obtained by extracting 100 arbitrary particles from the obtained image, measuring the particle size, and averaging.
- the sintering depth of the film was determined by cross-sectional observation by scanning electron microscope (SEM) observation. Using a scanning electron microscope “S-4800” manufactured by Hitachi High-Technologies Corporation, observation was performed at an acceleration voltage of 1 kV and an acceleration current of 10 ⁇ A. The sample was cut using a microtome, the cross section was observed, and the film thickness of the sintered film was measured. Further, whether or not the sintered film could be uniformly fired in the depth direction was evaluated by visually confirming the observation image. The case where it was able to bake uniformly to the board
- Production Example 1A Metal Fine Particle Dispersion
- a dispersion medium 360 g of Lion diffusion pump oil A (manufactured by Lion Corporation), which is a low vapor pressure liquid, is used, and Solsperse 39000 (manufactured by Lubrizol, main chain: polyethyleneimine skeleton, side) is used as a polymer dispersant.
- Chain: 40 g (having an average of 6 valerolactone units and an average of 6 caprolactone units) were added to 3 side chains and stirred to obtain a dispersion medium containing a polymer dispersant.
- a copper fine particle dispersion was produced using metallic copper using the apparatus shown in FIG.
- a granular copper block manufactured by Furuuchi Chemical Co., Ltd.
- the dispersion medium was placed in the rotating drum chamber 1.
- the pressure in the chamber was set to 10 ⁇ 3 Pa.
- the chamber was rotated while being cooled with running water, an electric current was passed through a heater provided at the lower part of the container, and the electric current value was increased until copper was dissolved and evaporated.
- the copper particles were dissolved and vaporized, and the copper gas was taken into the dispersant by contacting the surface of the dispersion medium, thereby forming a copper fine particle dispersion.
- Production Example 2A Metal Fine Particle Dispersion
- a silver fine particle dispersion was produced in the same manner as in Production Example 1A, except that 5 g of silver (manufactured by Ishifuku Metal Industry Co., Ltd.) was used in place of the copper used in Production Example 1A.
- the dispersion was filtered with a 0.2 ⁇ m filter and observed with STEM in the same manner as in Production Example 1A. As a result, silver particles having an average primary particle size of 10 nm were confirmed.
- Production Example 3A Metal Fine Particle Dispersion
- Solsperse 71000 manufactured by Lubrizol Corp., main chain: polyethyleneimine skeleton, side chain: 15 polypropylene glycol units on average, ethylene glycol unit instead of Solsperse 39000 as the polymer dispersant
- a copper fine particle dispersion was produced.
- the dispersion was filtered with a 0.2 ⁇ m filter and observed with STEM in the same manner as in Production Example 1A. As a result, copper particles with an average primary particle size of 8 nm were confirmed.
- Production Example 4A Metal Fine Particle Dispersion
- Mariarim AAB-0851 manufactured by NOF Corporation, main chain: maleic anhydride skeleton, side chain: polyether skeleton
- Solsperse 39000 as the polymer dispersant.
- Production Example 5A Metal Fine Particle Dispersion
- EFKA4010 manufactured by Efka Chemical Co., Ltd., main chain: tolylene diisocyanate skeleton, side chain: polyether skeleton (polyethylene glycol unit on three side chains) was used instead of Solsperse 39000 as the polymer dispersant.
- a copper fine particle dispersion was prepared in the same manner as in Production Example 1A except that 2).
- the dispersion was filtered with a 0.2 ⁇ m filter and observed with STEM in the same manner as in Production Example 1A. As a result, copper particles with an average primary particle size of 8 nm were confirmed.
- Production Comparative Example 1A Metal Fine Particle Dispersion
- Solsperse 28000 manufactured by Lubrizol Corp., main chain: polyethyleneimine skeleton, side chain: 5 with 4 caprolactone units on average
- a copper fine particle dispersion was produced in the same manner as in Production Example 1A, except for the above.
- the dispersion was filtered with a 0.2 ⁇ m filter and observed with STEM in the same manner as in Production Example 1A. As a result, copper particles with an average primary particle size of 8 nm were confirmed.
- Example 1A (conductive substrate) The copper fine particle dispersion obtained in Production Example 1A was placed on the smooth surface side of a 200 ⁇ m thick polyethylene naphthalate (PEN) film (manufactured by Teijin DuPont Films, “Teonex Q65FA”, melting point: 270 ° C.). The whole surface was applied by spin coating. Subsequently, in order to dry a solvent component and to remove organic substance, it heated at 180 degreeC for 30 minute (s). Subsequently, a baking treatment was performed with a microwave surface wave plasma processing apparatus (MSP-1500, manufactured by Micro Electronics Co., Ltd.).
- MSP-1500 microwave surface wave plasma processing apparatus
- Firing by plasma treatment was performed using hydrogen gas at a hydrogen introduction pressure of 30 Pa and a microwave output of 700 W for 5 minutes to obtain a conductive substrate.
- the temperature of the substrate surface was measured with a thermocouple, it was maintained at 25 ° C. before the plasma treatment, and reached 180 ° C. at the end of plasma irradiation.
- Table 1 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 2A (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1A, except that the silver fine particle dispersion obtained in Production Example 2A was used. Table 1 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 3A (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1A, except that the copper fine particle dispersion obtained in Production Example 3A was used. Table 1 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 4A (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1A, except that the copper fine particle dispersion obtained in Production Example 4A was used. Table 1 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 5A (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1A, except that the copper fine particle dispersion obtained in Production Example 5A was used. Table 1 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Comparative Example 1A (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1A, except that the copper fine particle dispersion obtained in Production Comparative Example 1A was used. Table 1 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 6A (conductive substrate) In Example 1A, except that the heat treatment for removing organic substances (heating at 180 ° C. for 30 minutes) was not performed, and the baking time by plasma treatment was set to 10 minutes, the same as in Example 1A. A conductive substrate was obtained. In addition, when the temperature of the substrate surface was measured with a thermocouple, as in Example 1A, what was held at 25 ° C. before the plasma treatment reached 180 ° C. at the end of plasma irradiation. Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 7A (conductive substrate)
- Example 6A a conductive substrate was obtained in the same manner as Example 6A, except that the dispersion obtained in Production Example 2A was used.
- Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 8A (conductive substrate)
- Example 6A a conductive substrate was obtained in the same manner as Example 6A, except that the dispersion obtained in Production Example 3A was used.
- Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 9A (conductive substrate)
- Example 6A a conductive substrate was obtained in the same manner as Example 6A, except that the dispersion obtained in Production Example 4A was used.
- Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 10A (conductive substrate)
- Example 6A a conductive substrate was obtained in the same manner as Example 6A, except that the dispersion obtained in Production Example 5A was used.
- Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Example 6A a conductive substrate was obtained in the same manner as Example 6A, except that the dispersion obtained in Production Comparative Example 1A was used. Table 2 shows the results of evaluating the obtained conductive substrate in the same manner as in Example 1A.
- Production Example 1B (copper fine particles) After adding 64 g of cupric oxide and 5.1 g of gelatin as a protective colloid to 650 ml of pure water, mixing, adjusting the pH of the mixture to 10 using 15% aqueous ammonia, and starting from room temperature over 20 minutes. The temperature was raised to 90 ° C. After the temperature rise, a solution prepared by mixing 6.4 g of a 1% mercaptoacetic acid solution and 75 g of 80% hydrazine monohydrate with 150 mL of pure water as a complexing agent was added with stirring. Reaction with dicopper gave copper fine particles. The filtrate was washed and dried to obtain copper fine particles. The obtained copper fine particles were observed by STEM by the above method, and as a result, the average primary particle size was 0.05 ⁇ m.
- Production Example 1B Cu fine particle dispersion
- Solsperse 41000 manufactured by Lubrizol, main chain: polyether skeleton
- 67 g of toluene were added as a dispersant and stirred.
- 30 g of the copper fine particles obtained in Production Example 1B were added and stirred.
- the bottle was covered and shaken with a paint shaker for 3 hours to obtain a copper-colored copper fine particle dispersion.
- observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- Production Example 2B (copper fine particle dispersion) Dispersing agent changed to Solsperse 71000 (manufactured by Lubrizol, main chain: polyethyleneimine skeleton, side chain: polyether skeleton, 4 side chains, average of 15 units of propylene glycol units, average of 2 units of ethylene glycol units) Except that, a copper fine particle dispersion was obtained in the same manner as in Production Example 1B. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- Production Example 3B (copper fine particle dispersion) Dispersant changed to Solsperse 39000 (manufactured by Lubrizol, main chain: polyethyleneimine skeleton, side chain: polyester skeleton, 3 side chains, valerolactone derivative unit on average 6 units, caprolactone derivative unit on average 6 units) Except that, a copper fine particle dispersion was obtained in the same manner as in Production Example 1B. After the dispersion was filtered under pressure, observation by STEM was performed by the above method, and copper fine particles without aggregation were confirmed.
- Example 4B (copper fine particle dispersion) Manufactured except that the dispersant was changed to Azisper PB-821 (manufactured by Ajinomoto Finetechno, main chain: polyallylamine skeleton, side chain: polyester skeleton, 3 side chains, average 16 caprolactone derivative units) A copper fine particle dispersion was obtained in the same manner as in Example 1B. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- Azisper PB-821 manufactured by Ajinomoto Finetechno, main chain: polyallylamine skeleton, side chain: polyester skeleton, 3 side chains, average 16 caprolactone derivative units
- Production Example 5B (copper fine particle dispersion) Except that the dispersant was changed to Marialim AAB-0851 (manufactured by NOF Corporation, main chain: maleic anhydride skeleton, side chain: polyether skeleton (propylene glycol unit)), the same as Production Example 1B A copper fine particle dispersion was obtained. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- Marialim AAB-0851 manufactured by NOF Corporation, main chain: maleic anhydride skeleton, side chain: polyether skeleton (propylene glycol unit)
- Production Example 6B (copper fine particle dispersion)
- the dispersant is EFKA4010 (manufactured by EFKA Chemical Co., Ltd., main chain: tolylene diisocyanate skeleton, side chain: polyether skeleton, 3 side chains have 2 polyethylene glycol units, 1 side chain has 3 caprolactone units) Except for the change, a copper fine particle dispersion was obtained in the same manner as in Production Example 1B. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- Production Example 7B (copper fine particle dispersion) To a 225 mL mayonnaise bottle, 4.7 g of Solsperse 39000 (manufactured by Lubrizol, supra) and 48.3 g of propylene glycol monomethyl ether acetate (PGMEA) were added and stirred. After dissolution, 47 g of the copper fine particles produced in Production Example 1B were added and stirred. Next, the same operation as in Production Example 1B was performed to obtain a copper-colored copper fine particle dispersion. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- PMEA propylene glycol monomethyl ether acetate
- the dispersion had a viscosity of 10 mPa ⁇ s and a surface tension of 26.8 mN / m.
- Production Example 8B (copper fine particle dispersion) A copper fine particle dispersion was obtained in the same manner as in Production Example 7B, except that the solvent was changed to butyl diglycol acetate. After the dispersion was filtered under pressure, observation by STEM was performed by the above method, and copper fine particles without aggregation were confirmed. The dispersion had a viscosity of 12 mPa ⁇ s and a surface tension of 28.3 mN / m. As a result of confirming the ink ejection performance of the dispersion by the above method, there was no ejection bending or clogging, and the inkjet patterning aptitude was good.
- Production Example 9B (copper fine particle dispersion) A copper fine particle dispersion was obtained in the same manner as in Production Example 7B except that the dispersant was changed to Solsperse 71000 (manufactured by Lubrizol, supra). After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed. The dispersion had a viscosity of 12 mPa ⁇ s and a surface tension of 26.9 mN / m. As a result of confirming the ink ejection performance of the dispersion by the above method, there was no ejection bending or clogging, and the inkjet patterning aptitude was good.
- Production Example 10B (copper fine particle dispersion) 0.9 g of Solsperse 71000 (manufactured by Lubrizol, supra) and 41.1 g of toluene were added to a 140 mL mayonnaise bottle and stirred. After dissolution, 18 g of the copper fine particles produced in Production Example 1B were added and stirred. Next, a copper-colored copper fine particle dispersion was obtained in the same manner as in Production Example 1B. After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- the dispersion had a solid content concentration of 31.7% by mass, a viscosity of 1.6 mPa ⁇ s, and a surface tension of 22.5 mN / m.
- Production Example 11B (copper fine particle dispersion) Except for changing the dispersant to Solsperse 8200 (manufactured by Lubrizol Corp., main chain: polyamide skeleton, comb-shaped structure containing a polypropylene glycol unit in the side chain and containing basic functional groups), the same as in Production Example 10B Thus, a copper fine particle dispersion was obtained. After the dispersion was filtered under pressure, observation by STEM was performed by the above method, and copper fine particles without aggregation were confirmed. The dispersion had a solid content concentration of 30.9% by mass, a viscosity of 1.5 mPa ⁇ s, and a surface tension of 23.4 mN / m.
- Production Example 12B Copper fine particle dispersion
- Copper was prepared in the same manner as in Production Example 10B, except that the dispersant was changed to Disperbyk-9076 (manufactured by Big Chemie, main chain: polyamine skeleton, polyether skeleton in the side chain and containing a basic functional group).
- a fine particle dispersion was obtained.
- the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- the dispersion had a solid content concentration of 32.7% by mass, a viscosity of 1.2 mPa ⁇ s, and a surface tension of 23.2 mN / m.
- Production Example 13B Copper fine particle dispersion
- Copper was prepared in the same manner as in Production Example 10B, except that the dispersant was changed to Disperbyk-145 (manufactured by Big Chemie, main chain: polyamine skeleton, polyether skeleton in the side chain and containing a basic functional group).
- a fine particle dispersion was obtained.
- the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed.
- the dispersion had a solid content concentration of 31.2% by mass, a viscosity of 1.2 mPa ⁇ s, and a surface tension of 22.7 mN / m.
- Production Example 14B (copper fine particle dispersion) A copper fine particle dispersion was obtained in the same manner as in Production Example 10B except that the solvent was changed from toluene to BCA (butyl carbitol acetate). After the dispersion was subjected to pressure filtration, observation with an STEM by the above method confirmed that copper fine particles without aggregation were confirmed. The dispersion had a solid content concentration of 31.1% by mass, a viscosity of 8.3 mPa ⁇ s, and a surface tension of 31.5 mN / m. As a result of confirming the inkjet printing suitability of this dispersion by the above method, there was no nozzle clogging or ejection bending, and the inkjet patterning property was good.
- Production Example 15B Dispersing the copper fine particles in the same manner as in Production Example 10B except that 1.8 g of Solsperse 71000 (manufactured by Lubrizol, supra), 24 g of copper fine particles, and 34.2 g of butyl propylene glycol were used as the dispersant. Got the body.
- the solid content concentration of this dispersion was 42.4% by mass, the viscosity was 11.1 mPa ⁇ s, and the surface tension was 31.2 mN / m.
- Production Example 16B Copper fine particles in the same manner as in Production Example 10B except that the dispersant was changed to 1.2 g of Solsperse 71000 (manufactured by Lubrizol, supra), 30 g of copper fine particles, and 28.8 g of methyl ethyl diglycol as the solvent. A dispersion was obtained. The solid content concentration of this dispersion was 50.9% by mass, the viscosity was 13.1 mPa ⁇ s, and the surface tension was 30.9 mN / m. As a result of confirming the inkjet printing suitability of this dispersion by the above method, there was no nozzle clogging or ejection bending, and the inkjet patterning property was good.
- Example 1B (conductive substrate) The dispersion obtained in Production Example 1B was adjusted with toluene so that the solid content was 30% by mass, and a polyethylene naphthalate (PEN) film having a thickness of 200 ⁇ m (“Teonex Q65FA” manufactured by Teijin DuPont Films Ltd., melting point) : 270 ° C.) on the smooth surface side by spin coating. The solvent component was then dried and heated at 160 ° C. for 30 minutes to remove organic matter. Subsequently, a baking treatment was performed using a microwave surface wave plasma processing apparatus (MSP-1500, manufactured by Micro Electronics Co., Ltd.).
- MSP-1500 microwave surface wave plasma processing apparatus
- Firing by plasma treatment was performed using hydrogen gas at a hydrogen introduction pressure of 30 Pa and a microwave output of 600 W for 5 minutes to obtain a conductive substrate.
- the temperature of the substrate surface was measured with a thermocouple, it was maintained at 25 ° C. before the plasma treatment, and reached 160 ° C. at the end of plasma irradiation. The obtained substrate was not deformed.
- Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 2B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1B, except that the dispersion obtained in Production Example 2B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 3B (conductive substrate) The dispersion obtained in Production Example 3B was adjusted with toluene so that the solid content was 30% by mass, and a polyethylene naphthalate (PEN) film having a thickness of 200 ⁇ m (“Teonex Q65FA” manufactured by Teijin DuPont Films Ltd., melting point) : 270 ° C.) on the smooth surface side by spin coating. Heating to remove organic matter was not performed. Subsequently, a baking treatment was performed using a microwave surface wave plasma processing apparatus (MSP-1500, manufactured by Micro Electronics Co., Ltd.). Firing by plasma treatment was performed using hydrogen gas at a hydrogen introduction pressure of 30 Pa and a microwave output of 600 W for 10 minutes to obtain a conductive substrate.
- MSP-1500 microwave surface wave plasma processing apparatus
- thermocouple When the temperature of the substrate surface was measured with a thermocouple, it was maintained at 25 ° C. before the plasma treatment, and reached 160 ° C. at the end of plasma irradiation. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 4B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant obtained in Production Example 4B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 5B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant obtained in Production Example 1B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 6B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant obtained in Production Example 2B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 7B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant obtained in Production Example 6B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 8B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant obtained in Production Example 7B was used. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 9B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 1B, except that the plasma treatment conditions were set to a microwave output of 650 W. When the temperature of the substrate surface was measured with a thermocouple, it was maintained at 25 ° C. before the plasma treatment, and reached 180 ° C. at the end of plasma irradiation. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 10B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 2B, except that the plasma treatment conditions were microwave output 650 W. The obtained substrate was not deformed. Table 3 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 11B (conductive substrate)
- the dispersion obtained in Production Example 10B was adjusted with toluene to a solid content of 30% by mass, and a polyethylene naphthalate (PEN) film having a thickness of 200 ⁇ m (“Teonex Q65FA” manufactured by Teijin DuPont Films Ltd., melting point) : 270 ° C.) on the smooth surface side by spin coating.
- PEN polyethylene naphthalate
- a baking treatment was performed using a microwave surface wave plasma processing apparatus (MSP-1500, manufactured by Micro Electronics Co., Ltd.).
- Firing by plasma treatment was performed using hydrogen gas at a hydrogen introduction pressure of 30 Pa and a microwave output of 500 W for 5 minutes to obtain a conductive substrate.
- the temperature of the substrate surface was measured with a thermocouple, it was maintained at 25 ° C. before the plasma treatment, and reached 160 ° C. at the end of plasma irradiation. The obtained substrate was not deformed.
- Table 4 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 12B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 11B, except that the dispersion obtained in Production Example 11B was used. The obtained substrate was not deformed. Table 4 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 13B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 11B, except that the dispersion obtained in Production Example 12B was used. The obtained substrate was not deformed. Table 4 shows the results of evaluating the obtained conductive substrate by the above method.
- Example 14B (conductive substrate) A conductive substrate was obtained in the same manner as in Example 11B, except that the dispersion obtained in Production Example 13B was used. The obtained substrate was not deformed. Table 4 shows the results of evaluating the obtained conductive substrate by the above method.
- Comparative Example 1B A conductive substrate was obtained in the same manner as in Example 3B, except that the dispersant was changed to Solsperse 16000 (manufactured by Lubrizol, main chain: polyethyleneimine skeleton, side chain: 12-hydroxystearic acid ester). Table 3 shows the results of evaluating the obtained conductive substrate by the above method. Although the obtained substrate was not deformed, the surface resistance of the conductive substrate was as high as 10 8 ⁇ / ⁇ or more and could not be measured. It is considered that the organic matter resulting from the dispersant was not decomposed and remained by the microwave surface wave plasma.
- Comparative Example 2B A copper fine particle dispersion was obtained in the same manner as in Production Example 7B except that the dispersant was changed to oleylamine. When the dispersion was filtered under pressure, it could not be filtered. Further, when STEM observation was performed, many aggregates were present, and ink jet printing was attempted, but ink could not be ejected.
- Comparative Example 4B A dispersion was obtained in the same manner as in Production Example 7B, except that the dispersant was changed to Disperbyk-116 (acrylic dispersant comprising butyl acrylate and butyl methacrylate, manufactured by Big Chemie). When the dispersion was filtered under pressure, it could not be filtered. Further, when STEM observation was performed, many aggregates were present, and ink jet printing was attempted, but ink could not be ejected.
- Disperbyk-116 acrylic dispersant comprising butyl acrylate and butyl methacrylate, manufactured by Big Chemie
- the conductive substrate produced using the metal fine particle dispersion of the present invention has high adhesion between the base material and the metal fine particle sintered film and is excellent in conductivity. Therefore, the conductive substrate is suitably used for a printed wiring board, a multilayer printed wiring board, a flexible printed wiring board, an electromagnetic wave shield, and the like. Moreover, since the manufacturing method of this invention can form a circuit pattern in a base material directly by a printing method, its production efficiency is high compared with the etching method etc. Furthermore, since the metal fine particle dispersant is easily decomposable and the firing process can be simplified, the production cost can be reduced and the production efficiency is extremely high.
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Abstract
Description
しかしながら、200℃以上の焼成温度であると、例えば基材として、ポリエステル樹脂等の低耐熱性基材を用いた場合には、変形や変色等を起こすため、用いることはできない。
このような方法により、回路等を形成する場合に、銅微粒子の分散性が重要である。すなわち、銅微粒子の一次粒子が著しく凝集した状態であったり、二次粒子の大きさや、形状が不揃いであると、回路等を形成した際に欠陥が生じやすい。また、インクジェット方式により基板上に回路を形成する場合には、インクジェットプリンタのヘッドの吐出ノズルに詰まりが生じたり、吐出曲がりが生じるなどして、微細パターンの形成に不具合が生じる場合があった。
2.固定軸
3.低蒸気圧液体
4.低蒸気圧液体の膜
5.金属
6.加熱容器
7.水流
8.回転方向
9.原子
10.金属微粒子
しかしながら、塗布液中に含まれる金属又は金属酸化物微粒子を分散させるための分散剤として、有機材料が通常用いられ、該有機物が残存することで、導電性が低下したり、導電性膜の深さ方向に焼結が進行しにくいという不具合があった。この不具合を解消するために、有機物を除去するための焼成を行う必要があり、生産性が低下するという問題があった。
(1)金属微粒子、高分子分散剤、及び分散媒を含有する金属微粒子分散体であって、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエステル骨格を有し、該ポリエステル骨格が、バレロラクトンから誘導される構成単位、及びカプロラクトンから誘導される構成単位の少なくとも一方を有し、該構成単位の数の合計が、平均値として、10以上であり、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする金属微粒子分散体、
(2)金属微粒子、高分子分散剤、及び分散媒を含有する金属微粒子分散体であって、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエーテル骨格を有し、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする金属微粒子分散体、
(3)基材上に、上記(1)又は(2)に記載の金属微粒子分散体を含む塗布液をパターン状に印刷して印刷層を形成し、該印刷層を焼成処理してパターン状の金属微粒子焼結膜を形成する導電性基板の製造方法、及び
(4)上記(3)に記載の製造方法により製造した導電性基板、
を提供するものである。
本発明の金属微粒子分散体は、金属微粒子、高分子分散剤、及び分散媒を含有し、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエステル骨格を有し、該ポリエステル骨格が、バレロラクトンから誘導される構成単位、及びカプロラクトンから誘導される構成単位の少なくとも一方を有し、該構成単位の数の合計が、平均値として、10以上であり、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする。
また、本発明の金属微粒子分散体は、金属微粒子、高分子分散剤、及び分散媒を含有し、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエーテル骨格を有し、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする。
以下、金属微粒子分散体を構成する各構成材料について詳細に説明する。
本発明の金属微粒子分散体は、金属微粒子を含有する。なお、本明細書において、金属微粒子は、上述のように、金属状態の微粒子に加えて、合金状態の微粒子や、金属酸化物など金属化合物の微粒子なども含むものをいう。
金属の種類としては、導電性を有するものであれば特に制限されるものではないが、高い導電性を有し、かつ微粒子を容易に維持できる点から、金、銀、銅、ニッケル、白金、パラジウム、スズ、鉄、クロム、インジウム、ケイ素、及びゲルマニウムなどが挙げられ、これらのうち、金、銀、銅、及びニッケルが好ましく、導電性及び経済性を加味すると、銅及び銀が好ましい。これらの金属は1種を単独で用いてもよいし、2種以上を混合して、又は合金化して使用してもよい。また、金属化合物としては金属酸化物、金属水酸化物などが挙げられる。具体的には、銀の化合物としては、酸化銀、有機銀化合物等が好ましく、銅の化合物としては、酸化第一銅、酸化第二銅又はこれらの混合物などが好適に挙げられる。これらのうち、特に銅の化合物が好ましく、とりわけ、銅の酸化物(酸化第一銅、酸化第二銅又はこれらの混合物)が好適である。
例えば、蒸着法では、高真空下で分散剤を含む低蒸気圧液体中に加熱蒸発した金属の蒸気を接触させて微粒子を製造する。
また、分散体の分散安定性を高めるために、微粒子の表面処理を施したり、高分子、イオン性化合物、界面活性剤等からなる分散剤を添加してもよい。
なお、上記平均一次粒子径は電子顕微鏡を用いて測定したものであり、通常、透過型電子顕微鏡(TEM)や走査透過型電子顕微鏡(STEM)により測定した観察像から統計処理により算出する。
図1において、チャンバー1は、固定軸2の周りに回転するドラム状であり、固定軸2を通してチャンバー1の内部が高真空に排気される構造を有している。チャンバー1には、本発明で用いる分散剤が溶解された低蒸気圧液体又は本発明で用いる分散剤が入れてあり、ドラム状のチャンバー1の回転によって、チャンバー1の内壁に、低蒸気圧液体3の膜4が形成される。チャンバー1の内部には、金属5を入れる加熱容器6が固定されている。金属5は、抵抗線に電流を流すなどして所定温度まで加熱され、気体となってチャンバー1の中に放出される。
チャンバー1の外壁は、水流7で全体が冷却されている。加熱された金属5から真空中に放出された原子9は、低蒸気圧液体3の膜4の表面から取り込まれ、金属微粒子10が形成される。次いで、かかる金属微粒子10が分散された低蒸気圧液体3は、チャンバー1の回転に伴ってチャンバー1の底部にある低蒸気圧液体3の中に輸送され、同時に、新しい「低蒸気圧液体3の膜4」がチャンバー1の上部に供給される。この過程を継続することによって、チャンバー1の底部にある低蒸気圧液体3は、金属5が高濃度に分散した分散体になっていく。
ここで、金属5を気体にする方法は特に限定されない。加熱温度については、気体状態にできるために充分な温度であれば特に限定はないが、400~2000℃が好ましく、600~1800℃がより好ましく、800~1700℃がさらに好ましく、600~1600℃が特に好ましく、800~1200℃が更に好ましい。
本発明で好ましく採用される上述の金属微粒子分散体の製造方法において、分散媒として低蒸気圧液体が用いられているが、これを乾燥又は留去しがたく不都合となるような場合には、金属微粒子分散体に含まれる低蒸気圧液体を、低蒸気圧液体ではない分散媒(以下、他の分散媒ということがある。)に置換することが好ましい。低蒸気圧液体ではない分散媒としては、上記のような低蒸気圧液体ではなく、非極性の分散媒(例えば、水に任意の割合では相溶しない液体)が好ましく挙げられる。このような分散媒を用いると、得られた金属微粒子分散体中の金属微粒子の分散安定性が良好となるからである。
低蒸気圧液体ではない分散媒(他の分散媒)は、金属微粒子分散体の種々の用途に応じ適宜選択することができる。他の分散媒としては、回路材料、導電膜、電磁波遮蔽材料などの製造用の溶媒又は分散媒をはじめ、一般に、インキ、塗料、触媒材料、医療用などに用いられる汎用の溶媒又は分散媒が挙げられる。
他の分散媒の具体例としては、例えば、ノルマルヘキサン、シクロヘキサン、ノルマルペンタン、ノルマルヘプタン、オクタン、デカン、ドデカン、テトラデカン、ヘキサデカンなどの脂肪族炭化水素類;トルエン、キシレンなどの芳香族炭化水素類;ジエチルエーテル、ジフェニルエーテルなどのエーテル類;プロピレングリコールモノエチルエーテル、プロピレングリコールモノエチルエーテルアセテート、ジプロピレングリコールモノエチルエーテルなどのグリコール系分散媒類;メチルエチルケトン、メチルイソブチルケトン、アセチルアセトン、シクロヘキサノンなどのケトン類;酪酸ブチルなどのエステル類;2-ジメチルアミノエタノール、2-ジエチルアミノエタノール、2-ジメチルアミノイソプロパノール、3-ジエチルアミノ-1-プロパノール、2-ジメチルアミノ-2-プロパノール、2-メチルアミノエタノール、4-ジメチルアミノ-1-ブタノールなどのアミノ基含有アルコール類などを好ましく挙げることができる。これらは単独でも、2種以上混合して使用してもよい。
低蒸気圧液体を他の分散媒に置換する方法としては、公知の溶媒置換・分散媒置換の方法などが挙げられる。
特に好ましい分散媒置換方法は、(i)金属微粒子分散体の分散媒である低蒸気圧液体と少なくともある割合では相溶する貧溶媒を、金属微粒子分散体に加えることによって、金属微粒子を沈降させ、(ii)上澄みとなる低蒸気圧液体を除去する過程を有する分散媒置換方法である。すなわち、貧溶媒を、金属微粒子分散体に加えることによって、実質的に上澄みとなる低蒸気圧液体と貧溶媒の混合物だけを、デカンテーションなどで除去する過程を有する分散媒置換方法が好ましい。
貧溶媒の沸点や蒸気圧は特に限定はないが、低沸点、高蒸気圧であることが好ましい。貧溶媒を加えた後、沈降した金属微粒子を容器中に残し、低蒸気圧液体と貧溶媒の混合液体をデカンテーションで除去し、再度貧溶媒を加えてデカンテーションを繰り返すことが好ましいが、最後のデカンテーションでも残存した貧溶媒を、要すれば加熱せずに減圧留去しやすいからである。該貧溶媒の1気圧における沸点は、180℃以下であることが好ましく、150℃以下であることがより好ましく、100℃以下であることが特に好ましい。
上記貧溶媒においては、炭素数が少なすぎても、また多すぎても、上記要件を満たさない場合がある。特に、炭素数が少なすぎる場合は、低蒸気圧液体と相溶しなくなる場合があり、一方、多すぎる場合は、後述する沸点が高くなりすぎる場合がある。
本発明における貧溶媒は、上記要件を満たしてデカンテーションをしやすい、デカンテーション後「他の分散媒」を加えた時に再分散しやすいなどの観点から、上記のなかでもアルコール系又はエステル系が、特に好ましい。
本発明において、金属微粒子としては、好ましい金属の種類として例示したうち、銅の微粒子が特に好ましく挙げられる。
銅微粒子は、高い導電性を有し、かつ微粒子を容易に維持でき、また導電性の他に、経済性、耐マイグレーション性にも優れている。なお、ここで銅微粒子とは、金属の状態のものをいうが、表面が酸化されている微粒子をも含むものである。
なお、上記平均一次粒子径は電子顕微鏡を用いて測定したものであり、通常、透過型電子顕微鏡(TEM)や走査透過型電子顕微鏡(STEM)により測定した観察像から統計処理により算出する。
例えば、蒸着法では、高真空下で分散剤を含む低蒸気圧液体中に加熱蒸発した金属の蒸気を接触させて微粒子を製造する。
本発明においては、上述の化学還元法の1種である、錯化剤及び保護コロイドの存在下で、2価の銅酸化物と還元剤とを媒液中で混合して生成することが好ましい。
ここで2価の銅酸化物とは、銅の原子価が2価であり、酸化第二銅、水酸化第二銅及びこれらの混合物を包含するものである。また、2価の銅酸化物には、本発明の効果を阻害しない範囲で、1価の銅酸化物やその他の金属等の不純物が含まれていてもよいが、1価の銅酸化物は実質的に含まれていないことが好ましい。
上記銅微粒子の調製方法で用いられる錯化剤とは、該錯化剤が有する配位子のドナー原子と銅イオン又は金属銅とが結合して銅錯体化合物を形成するものである。ドナー原子としては、窒素、酸素、及び硫黄が好適に挙げられ、これらは1種単独であってもよいし、2種以上を組み合わせて用いてもよい。
より具体的には、窒素がドナー原子である錯化剤として、アミン類、イミダゾール及びピリジンなどの窒素含有複素環式化合物、ニトリル類、シアン化合物、アンモニア、アンモニウム化合物、オキシム類などが挙げられる。
さらに、硫黄がドナー原子である錯化剤として、脂肪族チオール類、脂環式チオール類、芳香族チオール類、チオケトン類、チオエーテル類、ポリチオール類、チオ炭酸類、硫黄含有複素環式化合物、チオシアナート類、イソチオシアナート類、無機硫黄化合物などが挙げられる。
上記銅微粒子の調製方法で用いられる保護コロイドは、生成した銅微粒子の分散安定化剤として作用するものであり、種々のものを用いることができる。具体的には、ゼラチン、アラビアゴム、カゼイン、カゼイン酸ナトリウム、カゼイン酸アンモニウムなどのタンパク質系;デンプン、デキストリン、寒天、アルギン酸ナトリウムなどの天然高分子;ヒドロキシエチルセルロース、メチルセルロースなどのセルロース系;ポリビニルアルコール、ポリビニルピロリドンなどのビニル系;ポリアクリル酸ナトリウム、ポリアクリル酸アンモニウムなどのアクリル酸系;ポリエチレングリコールなどが挙げられる。
これらのうち、分散安定性などの点から、タンパク質系保護剤が特に好ましい。
保護コロイドの配合量としては、2価の銅酸化物100質量部に対して、1~100質量部の範囲であることが好ましく、2~50質量部の範囲がさらに好ましい。この範囲内であると、生成した銅微粒子が分散安定化しやすい。
上記銅微粒子の調製方法で用いられる還元剤は、還元反応中に1価の銅酸化物が生成しないように、還元力が強いものを使用することが好ましい。具体的には、ヒドラジン及びヒドラジン化合物などのヒドラジン系還元剤、水素化ホウ素ナトリウム、亜硫酸ナトリウム、亜硫酸水素ナトリウム、チオ硫酸ナトリウム、亜硝酸ナトリウム、次亜硝酸ナトリウム、亜リン酸、亜リン酸ナトリウム、次亜リン酸、次亜リン酸ナトリウムなどが挙げられる。特にヒドラジン系還元剤は、還元力が強く好ましい。
これらは、1種を単独で使用することができ、又は2種以上を併用することもできる。
また、還元剤の使用量は、2価の銅酸化物中に含まれる銅1モルに対して、0.2~5モルの範囲であることが好ましい。0.2モル以上であると、還元が十分に進行し、銅微粒子が得られる。一方、5モル以下であると、所望の粒子径の銅微粒子が得られる。以上の観点から、好ましい還元剤の使用量は、2価の銅酸化物中に含まれる銅1モルに対して、0.3~2モルの範囲である。
銅微粒子を調製する際の媒液としては、例えば、水などの水系溶媒、アルコール等の有機溶媒を用いることができるが、水系溶媒がより好ましい。
銅微粒子を調製する際の反応温度としては、10℃~媒液の沸点の範囲であることが好ましく、微細な銅微粒子を得るとの観点から、40~95℃の範囲が好ましく、80~95℃の範囲がさらに好ましい。また、pHは3~12の範囲であることが好ましく、反応時間は、還元剤の濃度等により異なるが、通常、10分~6時間程度である。
本発明で用いられる高分子分散剤は、主鎖及び側鎖の少なくとも一方に、所定のポリエステル骨格又はポリエーテル骨格を有することが特徴である。
これらの高分子分散剤は、その骨格構造に起因して、低温での焼成やマイクロ波表面波プラズマの照射などにより分解されやすく、有機物が残存しにくいため、十分な導電性が得られるものである。特に、主鎖及び側鎖の少なくとも一方にポリエーテル骨格を有するものは、マイクロ波表面波プラズマにより分解されやすく、好ましい。
また、本発明で用いられる高分子分散剤は、金属微粒子分散体の分散安定性の観点からは、1個以上の側鎖(分岐部分)を有する櫛型構造であることが好ましい。このような構造を有する高分子分散剤は、少量を使用するだけでも優れた分散安定性が得られ、低温での焼結性に優れた金属微粒子分散体を得ることができ、かつ該分散体を用いて得られる導電性基板に優れた導電性を付与することができるからである。
また、本発明においては、2種以上の高分子分散剤を混合して用いることもできる。
本発明において、リン酸基とは下記一般式(a)で示されるものをいい、リン酸エステル基を包含するものである。
また、本発明において、スルホン酸基とは下記一般式(b)で示されるものをいい、スルホン酸エステル基を包含するものである。
一般式(III)で示される化合物は、アルコールを出発物質として合成され、一般式(IV)に示されるアルキレンオキシドを開環付加反応させることにより得られる。
開環付加反応に際し、これらのアルキレンオキシドは1種を単独で用いてもよいし、複数種のアルキレンオキシドを混合して用いてもよいが、エチレンオキシド及びプロピレンオキシドのうち少なくともいずれか一方を含むことが好ましい。すなわち、主鎖にポリエーテル骨格を有する高分子分散剤としては、該ポリエーテル骨格が、エチレンオキシドから誘導されるポリエチレングリコール、及びプロピレンオキシドから誘導されるポリプロピレングリコールの少なくとも一方を構成単位(ユニット)として有することが好ましい。
また、ポリエチレングリコールユニット及びポリプロピレングリコールユニットの数の合計(上記nに相当)が、平均値として、10以上であることが、金属微粒子の分散性の点から好ましく、特に10~18の範囲が好ましい。
主鎖がポリアミン骨格である場合には、該骨格が、下記一般式(V)に示されるようなポリアリルアミンであることが好ましい。
本発明の金属微粒子分散体に用いる分散媒としては、水及び/又は有機系分散媒を用いることができる。有機系分散媒としては、ヘキサン、デカン、ドデカン、テトラデカン等の脂肪族炭化水素;シクロヘキサン等の脂環式炭化水素;トルエン、キシレンなどの芳香族炭化水素;アセトン、メチルエチルケトン、メチルイソブチルケトンなどのケトン類;酢酸メチル、酢酸エチル、酢酸プロピル、酢酸ブチル、酢酸イソブチルなどのエステル類;メタノール、エタノール、n-プロパノール、イソプロパノール、n-ブタノール、エチレングリコール、ジエチレングリコール、トリエチレングリコール、プロピレングリコール、グリセリンなどのアルコール類;テトラヒドロフラン、ジオキサン、エチレングリコールモノメチルエーテル(メチルセロソルブ)、エチレングリコールモノエチルエーテル(エチルセロソルブ)、エチレングリコールモノブチルエーテル(ブチルセロソルブ)などのエーテル類などが挙げられる。
これらのうち、金属微粒子の分散性等の観点から、脂肪族炭化水素、芳香族炭化水素、ケトン類、エステル類及びアルコール類が好ましい。また、これらの分散媒は、1種を単独で、又は2種以上を混合して用いることもできる。
本発明において、金属微粒子分散体の製造方法としては、金属微粒子を合成する際に使用する分散媒や媒液に予め高分子分散剤を添加しておく方法、金属微粒子を分散媒(あるいは媒液)に分散させる際に高分子分散剤を添加する方法などが好ましく挙げられる。
また、得られた金属微粒子を高分子分散剤に分散させる方法も挙げられる。この場合、ビーズミルなどのメディア分散、超音波や流体圧力を利用するメディアレス分散などにより分散させることができる。
次に、上記微粒子分散体を用いた導電性基板の製造方法について、詳細に説明する。
本発明の製造方法は、基材上に、上述の金属微粒子分散体を含む塗布液をパターン状に印刷して印刷層を形成し、該印刷層を焼成処理してパターン状の金属微粒子焼結膜を形成するものである。なお、ここで、パターン状の金属微粒子焼結膜は、以下「導電パターン」と記載することがある。なお、ここで「導電パターン」という場合には、金属微粒子がいわゆる金属状態で導電性を有する場合をいう。また、金属微粒子が金属酸化物などの金属化合物の場合には、導電性を有する金属微粒子焼結膜を得るために、金属化合物を還元することが必要である。例えば、水素などの還元ガス雰囲気下での焼成により、導電性を有する金属微粒子焼結膜が得られる。
本発明において用いる基材としては、導電性基板に用いられるものであれば特に制限されるものではなく、例えば、ソーダライムガラス、無アルカリガラス、ホウケイ酸ガラス、高歪点ガラス、石英ガラス等のガラス、アルミナ、シリカなどの無機材料を用いることができ、さらに高分子材料、紙などを用いることもできる。また、本発明では後に詳述するように、金属微粒子が低温で焼結されて導電性薄膜が形成されるため、基材に損傷を与えることがなく、高歪点ガラスなど耐熱性の高い特殊なガラスを使わなくてもよく、耐熱性の低い通常のソーダライムガラス等であっても使用することができる。さらには、プラスチックなどの高分子材料や紙も基材とすることができ、特に樹脂フィルムを用いることができる点で非常に有用である。
一方、基材が無機材料である場合には、通常0.1~10mm程度、好ましくは0.5~5mmである。
本発明の製造方法で用いられる塗布液は、上述の金属微粒子分散体を含むことが特徴である。本発明の金属微粒子分散体は、上述のように、特定の高分子分散剤を用いることによって、分散性が高く、安定性の高いものである。それと同時に、インクジェット方式による印刷を行う場合に、吐出安定性が高く、良好なパターニング適性が得られる。
また、当該塗布液には、上述の金属微粒子分散体に加えて、塗工適性を向上させるためにさらに分散媒を加えてもよい。ここで用いる分散媒は、金属微粒子分散体の製造過程で用いた分散媒と同じであってもよいし、異なってもよい。
これらのうち、界面活性剤は、金属微粒子の分散性をさらに高めたり、塗工性を向上させることができるため、好適に配合される。界面活性剤として、具体的には、4級アンモニウム塩などのカチオン系界面活性剤;カルボン酸塩、スルホン酸塩、硫酸エステル塩、リン酸エステル塩などのアニオン系界面活性剤;エーテル型、エステル型、エーテルエステル型などのノニオン系界面活性剤などが挙げられる。
さらに、造膜性を高めること、印刷適性を付与すること、及び分散性を高めることを目的として、例えばポリエステル樹脂、アクリル樹脂、あるいはウレタン樹脂等を樹脂バインダーとして塗布液に添加してもよい。また、必要に応じて、粘度調整剤、表面張力調整剤、あるいは安定剤等を添加してもよい。
基材上に塗布液を印刷し、印刷層を形成する方法としては特に制限されず、グラビア印刷、スクリーン印刷、スプレーコート、スピンコート、コンマコート、バーコート、ナイフコート、オフセット印刷、フレキソ印刷、インクジェット印刷、ディスペンサ印刷などの方法を用いることができる。これらのうち、微細なパターニングを行うことができるという観点から、グラビア印刷、フレキソ印刷、スクリーン印刷、及びインクジェット印刷が好ましい。特に、本発明の金属微粒子分散体は、分散性に優れているため、インクジェットの吐出ノズルに詰まりが生じたり、吐出曲がりが生じることがなく、インクジェット印刷に適している。
また、本発明の方法によれば、基材上に塗布液を所望のパターンに直接印刷することができるため、従来のフォトレジストを用いた手法に比較して、著しく生産性を向上させることができる。
本発明の製造方法における焼成は、金属微粒子同士が焼結する温度に昇温することにより、あるいはマイクロ波エネルギーの印加により発生する表面波プラズマ(以下「マイクロ波表面波プラズマ」と称することがある。)により行うことができる。なかでも、本発明においては、マイクロ波表面波プラズマにより行うことが好ましい。焼成にマイクロ波表面波プラズマを用いることで、基材への熱ダメージを少なくすることができる。また、基材の表面が粗化することを防ぐことができるため、透明基材を用いる場合には、導電パターンが形成された部分以外の基材の透明性が確保され、高い透明性を有する導電性基板が得られる。
また、マイクロ波表面波プラズマによる焼成処理は、大面積の処理が可能で、短時間の焼成処理が可能であるため、生産性が極めて高い。
特に、本発明においては、マイクロ波表面波プラズマを、還元性ガスの雰囲気下で発生させることが好ましく、とりわけ水素ガス雰囲気下で発生させることが好ましい。これにより、金属微粒子表面に存在する絶縁性の酸化物が還元除去され、導電性能の良好な導電パターンが形成される。
なお、還元性気体には、窒素、ヘリウム、アルゴン、ネオン、クリプトン、キセノンなどの不活性ガスを混合して用いれば、プラズマが発生し易くなるなどの効果がある。
本発明の金属微粒子分散体は、添加した高分子分散剤が金属微粒子に何らかの形で吸着していると推測される。そのような分散体を、大気中あるいは酸素を含む雰囲気下で焼成することで、その吸着力は低減し、さらに不活性ガス雰囲気あるいは還元性ガス雰囲気下でマイクロ波表面波プラズマを用いて焼成することにより、高分子分散剤の分解が促進するため、緻密な導電膜が得られると考えられる。
前記マイクロ波表面波プラズマの発生方法に特に制限はなく、例えば減圧状態の焼成処理室の照射窓からマイクロ波エネルギーを供給し、該焼成処理室内に照射窓に沿う表面波プラズマを発生させる無電極プラズマ発生手段を用いることができる。
なお、マイクロ波エネルギーは、一般に周波数が300MHz~3000GHzの電磁波であるが、例えば、2450MHzの電磁波が用いられる。この際、マイクロ波発振装置であるマグネトロンの精度誤差などのために2450MHz/±50MHzの周波数範囲を持っている。
このようなマイクロ波表面波プラズマは、プラズマ密度が高く、電子温度が低い特性を有し、前記印刷層を低温かつ短時間で焼成処理することが可能であり、緻密かつ平滑な金属微粒子焼結膜を形成することができる。マイクロ波表面波プラズマは、処理面に対して、面内で均一の密度のプラズマが照射される。その結果、他の焼成方式と比べて、面内で部分的に粒子の焼結が進行するなど、不均一な膜が形成されることが少なく、また粒成長を防ぐことができるため、非常に緻密で、平滑な膜が得られる。また、面内処理室内に電極を設ける必要がないので、電極由来の不純物のコンタミネーションを防ぐことができ、また処理材料に対して異常な放電によるダメージを防ぐことができる。
さらに、マイクロ波表面波プラズマは、電子温度が低いため、基材をエッチングする能力が小さく、プラスチック基材に対するダメージを小さくすることができると推察される。
したがって、従来のように、基材表面をあらかじめプラズマ処理等により粗化して、導電パターンとの密着性を向上させる方法に比較しても、本発明の方法は、基材と導電パターントの界面が平滑であり、かつ密着性が高い点で優れている。
また、本発明の導電性基板における、金属微粒子焼結膜のパターン(導電パターン)の体積抵抗率は、1.0×10-4Ω・cm以下であることが好ましい。
このような、本発明の導電性基板を用いた電子部材としては、表面抵抗の低い電磁波シールド用フィルム、導電膜、フレキシブルプリント配線板などに有効に利用することができる。
1.分散剤の構造特定方法
本発明で用いる高分子分散剤の構造を特定する方法としては、以下の方法を用いた。
測定前処理として、サンプル濃度が0.5%になるように、テトラヒドロフラン(THF)で希釈し、静置・濾過後、ゲル浸透クロマトグラフィ法(測定装置;東ソー(株)製,「HLC8220GPC」)で、ポリスチレン換算分子量を測定し、側鎖数を特定した。また、滴定法によりアミン価を、赤外分光法(IR)及び核磁気共鳴法(NMR)から各誘導体を定性し、主鎖及び側鎖の構造を示した。
2.評価方法
この例で得られた、金属微粒子分散体、及び導電性基板について、以下の方法によって評価した。
(1)粒径測定及び分散性評価(走査透過型電子顕微鏡(STEM)観察)
(株)日立ハイテクノロジーズ製の走査型電子顕微鏡(SEM)「S-4800」を用い、同装置に付属するSTEMによる観察像により、加速電圧30kV、エミッション電流10μAにて、金属微粒子及び金属微粒子分散体の観察を行い、分散性を評価した。金属微粒子の平均一次粒子径については、得られた画像から任意の粒子100個を抽出し、その粒径を計測し、平均することにより求めた。
(2)インクジェット印刷適性
プリンタ「DMP-2831」(FUJI FILM Dimatix社製)を用い、吐出量10pLのカートリッジヘッドを用いて、インクジェット印刷適性について評価した。
(3)導電性(表面抵抗)
表面抵抗計((株)ダイアインスツルメンツ製「ロレスタGP」,PSPタイププローブ)を用いて、金属微粒子焼結膜に4探針を接触させ、4探針法にて表面抵抗を測定した。
(4)膜厚および焼結深度
膜の焼結深度は、走査型電子顕微鏡(SEM)観察による断面観察により行った。
(株)日立ハイテクノロジーズ製の走査型電子顕微鏡「S-4800」を用い、加速電圧1kV、加速電流10μAで観察を行った。ミクロトームを用いて試料を切断し、断面観察を行い、焼結膜の膜厚を測定した。また、焼結膜が深さ方向に均一に焼成できているかどうかを、観察像を目視にて確認することで評価した。基板近傍まで均一に焼成できている場合を良好とし、均一に焼成できていない場合を不良とした。
分散媒として、低蒸気圧液体であるライオン拡散ポンプ油A(ライオン(株)製)360gを用い、これに高分子分散剤であるソルスパース39000(ルーブリゾール社製,主鎖:ポリエチレンイミン骨格,側鎖:3本の側鎖に、バレロラクトンユニットを平均6個およびカプロラクトンユニットを平均6個有する)40gを加えて攪拌し、高分子分散剤含有分散媒を得た。
図1に示す装置を用い、金属銅を使用して銅微粒子分散体を製造した。すなわち、容器6内に粒状銅塊(フルウチ化学(株)製)5gを入れ、回転ドラム式チャンバー1内に上記分散媒を入れた。真空ポンプで吸引することによって、チャンバー内の圧力を10-3Paとした。ついで、チャンバーを流水で冷却させながら回転させ、容器の下部に設けたヒーターに電流を流し、銅が溶解、蒸発するまでその電流値を上昇させた。
銅粒は溶解、気化し、銅の気体は分散媒表面に接触することで分散剤に取り込まれ、銅微粒子分散体が形成された。
得られた銅微粒子分散体100gにIPAを900g加え、攪拌した。銅微粒子を含む液体が分離、沈降するため、遠心分離機を用いて、遠心力10000Gにて5分間処理し、液体を完全に分離し、上澄みを取り除いた。上記作業を3回繰り返した。
残った沈澱物を、トルエンを用いてナスフラスコへ回収し、次いで、ロータリーエバポレーターにてIPAを除去し、黒色の分散体を得た。該分散体を0.2μmのフィルターでろ過した。上記した方法にて、STEMによる観察を行った結果、平均一次粒径8nmの銅粒子が確認できた。
製造実施例1Aで用いた銅に代えて、銀(石福金属興業(株)製)5gを使用したこと以外は、製造実施例1Aと同様にして、銀微粒子分散体を作製した。該分散体を0.2μmのフィルターでろ過し、製造実施例1Aと同様にSTEMによる観察を行った結果、平均一次粒径10nmの銀粒子が確認できた。
製造実施例1Aにおいて、高分子分散剤として、ソルスパース39000に代えて、ソルスパース71000(ルーブリゾール社製,主鎖:ポリエチレンイミン骨格,側鎖:4本にポリプロピレングリコールユニットを平均15個、エチレングリコールユニットを平均2個有する)を使用したこと以外は、製造実施例1Aと同様にして、銅微粒子分散体を作製した。該分散体を0.2μmのフィルターでろ過し、製造実施例1Aと同様にSTEMによる観察を行った結果、平均一次粒径8nmの銅粒子が確認できた。
製造実施例1Aにおいて、高分子分散剤として、ソルスパース39000に代えて、マリアリムAAB-0851(日本油脂(株)製,主鎖:無水マレイン酸骨格,側鎖:ポリエーテル骨格)を使用したこと以外は、製造実施例1Aと同様に銅微粒子分散体を作製した。該分散体を0.2μmのフィルターでろ過し、製造実施例1Aと同様にSTEMによる観察を行った結果、平均一次粒径8nmの銅粒子が確認できた。
製造実施例1Aにおいて、高分子分散剤として、ソルスパース39000に代えて、EFKA4010(エフカケミカル(株)製,主鎖:トリレンジイソシアネート骨格,側鎖:ポリエーテル骨格(側鎖3本にポリエチレングリコールユニットを2個有する))を使用したこと以外は、製造実施例1Aと同様に銅微粒子分散体を作製した。該分散体を0.2μmのフィルターでろ過し、製造実施例1Aと同様にSTEMによる観察を行った結果、平均一次粒径8nmの銅粒子が確認できた。
製造実施例1Aにおいて、高分子分散剤として、ソルスパース39000に代えて、ソルスパース28000(ルーブリゾール社製,主鎖:ポリエチレンイミン骨格,側鎖:5本に、カプロラクトンユニットを平均4個有する)を使用したこと以外は、製造実施例1Aと同様に銅微粒子分散体を作製した。該分散体を0.2μmのフィルターでろ過し、製造実施例1Aと同様にSTEMによる観察を行った結果、平均一次粒径8nmの銅粒子が確認できた。
製造実施例1Aにより得られた銅微子分散体を、厚さ200μmのポリエチレンナフタレート(PEN)フィルム(帝人デュポンフィルム(株)製,「テオネックスQ65FA」,融点:270℃)の平滑面側に、スピンコートにより全面塗布した。次いで、溶媒成分を乾燥させ、有機物を除去するために、180℃で30分間加熱した。
続いて、マイクロ波表面波プラズマ処理装置(MSP-1500,ミクロ電子(株)製)により焼成処理を行った。プラズマ処理による焼成は、水素ガスを用い、水素導入圧力30Pa、マイクロ波出力700Wで、5分間焼成を行い、導電性基板を得た。基板表面の温度を熱電対で測定したところ、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に180℃に到達した。
得られた導電性基板について、上記方法により評価した結果を第1表に示す。
製造実施例2Aにより得られた銀微粒子分散体を使用したこと以外は、実施例1Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様に評価した結果を第1表に示す。
製造実施例3Aにより得られた銅微粒子分散体を使用したこと以外は、実施例1Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様に評価した結果を第1表に示す。
製造実施例4Aにより得られた銅微粒子分散体を使用したこと以外は、実施例1Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様に評価した結果を第1表に示す。
製造実施例5Aにより得られた銅微粒子分散体を使用したこと以外は、実施例1Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様に評価した結果を第1表に示す。
製造比較例1Aにより得られた銅微粒子分散体を使用したこと以外は、実施例1Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様に評価した結果を第1表に示す。
実施例1Aにおいて、有機物を除去するための加熱処理(180℃で30分間加熱)を行わなかったこと、及びプラズマ処理による焼成時間を10分間としたこと以外は、実施例1Aと同様にして導電性基板を得た。なお、基板表面の温度を熱電対で測定したところ、実施例1Aと同様に、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に180℃に到達した。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
実施例6Aにおいて、製造実施例2Aで得られた分散体を用いたこと以外は、実施例6Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
実施例6Aにおいて、製造実施例3Aで得られた分散体を用いたこと以外は、実施例6Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
実施例6Aにおいて、製造実施例4Aで得られた分散体を用いたこと以外は、実施例6Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
実施例6Aにおいて、製造実施例5Aで得られた分散体を用いたこと以外は、実施例6Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
実施例6Aにおいて、製造比較例1Aで得られた分散体を用いたこと以外は、実施例6Aと同様にして導電性基板を得た。得られた導電性基板について、実施例1Aと同様にして評価した結果を第2表に示す。
酸化第二銅64g、保護コロイドとしてゼラチン5.1gを650ミリリットルの純水に添加、混合し、15%のアンモニア水を用いて混合液のpHを10に調整した後、20分かけて室温から90℃まで昇温した。昇温後、撹拌しながら錯化剤として1%のメルカプト酢酸溶液6.4gと、80%のヒドラジン一水和物75gを150mLの純水に混合した液を添加し、1時間かけて酸化第二銅と反応させ、銅微粒子を得た。濾液を洗浄、乾燥し、銅微粒子を得た。得られた銅微粒子について、上記方法により、STEMによる観察を行った結果、平均一次粒子径は0.05μmであった。
225mLのマヨネーズ瓶に、分散剤としてソルスパース41000(ルーブリゾール社製,主鎖:ポリエーテル骨格)3gとトルエン67gを加え攪拌した。
溶解した後、製造例1Bで得られた銅微粒子30gを加え攪拌した。
直径0.3mmのジルコニアビーズ200gを加えて瓶にふたをし、ペイントシェイカーにて3時間振とうさせることで銅色の銅微粒子分散体を得た。
該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
分散剤をソルスパース71000(ルーブリゾール社製,主鎖:ポリエチレンイミン骨格,側鎖:ポリエーテル骨格,側鎖数4本,プロピレングリコールユニットを平均15ユニット、エチレングリコールユニットを平均2ユニット有する)に変更したこと以外は、製造実施例1Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
分散剤をソルスパース39000(ルーブリゾール社製,主鎖:ポリエチレンイミン骨格,側鎖:ポリエステル骨格,側鎖数3本,バレロラクトン誘導体ユニットを平均6ユニット、カプロラクトン誘導体ユニットを平均6ユニット有する)に変更したこと以外は、製造実施例1Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
分散剤をアジスパーPB-821(味の素ファインテクノ製,主鎖:ポリアリルアミン骨格,側鎖:ポリエステル骨格,側鎖数3本,カプロラクトン誘導体ユニットを平均16個有する)に変更したこと以外は、製造実施例1Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
分散剤をマリアリムAAB-0851(日本油脂(株)製,主鎖:無水マレイン酸骨格,側鎖:ポリエーテル骨格(プロピレングリコールユニット))に変更したこと以外は、製造実施例1Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
分散剤をEFKA4010(エフカケミカル製,主鎖:トリレンジイソシアネート骨格,側鎖:ポリエーテル骨格,側鎖3本にポリエチレングリコールユニットを2個有し、側鎖1本にカプロラクトンユニットを3個有する)に変更したこと以外は、製造実施例1Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
225mLのマヨネーズ瓶にソルスパース39000(ルーブリゾール社製,前出)4.7gとプロピレングリコールモノメチルエーテルアセテート(PGMEA)48.3gを加え攪拌した。溶解した後、製造例1Bで製造した銅微粒子を47g加え攪拌した。次いで、製造実施例1Bと同様の操作を行って、銅色の銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の粘度は10mPa・sであり、表面張力は26.8mN/mであった。該分散体のインクジェット印刷適性について、上記方法にて、インクの吐出性能を確認した結果、吐出曲がりや詰まりはなく、インクジェットパターニング適性は良好であった。
溶剤をブチルジグリコールアセテートに変更したこと以外は、製造実施例7Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法により、STEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の粘度は12mPa・sであり、表面張力は28.3mN/mであった。該分散体のインクジェット印刷適性について、上記方法にて、インクの吐出性能を確認した結果、吐出曲がりや詰まりはなく、インクジェットパターニング適性は良好であった。
分散剤をソルスパース71000(ルーブリゾール社製、前出)に変更したこと以外は、製造実施例7Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の粘度は12mPa・sであり、表面張力は26.9mN/mであった。該分散体のインクジェット印刷適性について、上記方法にて、インクの吐出性能を確認した結果、吐出曲がりや詰まりはなく、インクジェットパターニング適性は良好であった。
140mLのマヨネーズ瓶にソルスパース71000(ルーブリゾール社製,前出)0.9gとトルエン41.1gを加え攪拌した。溶解した後、製造例1Bで製造した銅微粒子を18g加え攪拌した。次いで、製造実施例1Bと同様の操作で赤銅色の銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の固形分濃度は31.7質量%であり、粘度は1.6mPa・sであり、表面張力は22.5mN/mであった。この分散体のインクジェット印刷適性について、上記方法にて、インクの吐出性能を確認した結果、吐出曲がりや詰まりはなく、インクジェットパターニング適性は良好であった。
分散剤をソルスパース8200(ルーブリゾール社製、主鎖:ポリアミド骨格、側鎖にポリプロピレングリコールユニットを含む、塩基性官能基を含有する櫛型構造)に変更した以外は、製造実施例10Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ凝集のない銅微粒子が確認できた。
この分散体の固形分濃度は30.9質量%であり、粘度は1.5mPa・sであり、表面張力は23.4mN/mであった。
分散剤をDisperbyk-9076(ビックケミー社製,主鎖:ポリアミン骨格,側鎖にポリエーテル骨格を含む、塩基性官能基含有の高分岐構造)に変更した以外は製造実施例10Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の固形分濃度は32.7質量%であり、粘度は1.2mPa・sであり、表面張力は23.2mN/mであった。
分散剤をDisperbyk-145(ビックケミー社製,主鎖:ポリアミン骨格,側鎖にポリエーテル骨格を含む、塩基性官能基含有の高分岐構造)に変更した以外は製造実施例10Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の固形分濃度は31.2質量%であり、粘度は1.2mPa・sであり、表面張力は22.7mN/mであった。
溶媒をトルエンからBCA(ブチルカルビトールアセテート)に変更したこと以外は製造実施例10Bと同様にして銅微粒子分散体を得た。該分散体を加圧ろ過した後、上記方法によりSTEMによる観察を行ったところ、凝集のない銅微粒子が確認できた。
この分散体の固形分濃度は31.1質量%であり、粘度は8.3mPa・sであり、表面張力は31.5mN/mであった。この分散体のインクジェット印刷適性を上記方法にて確認した結果、ノズル詰まりや吐出曲がりはなくインクジェットパターニング性は良好であった。
分散剤を、ソルスパース71000(ルーブリゾール社製,前出)を1.8g、銅微粒子を24g、溶媒をブチルプロピレングリコール34.2gに変更したこと以外は製造実施例10Bと同様にして銅微粒子分散体を得た。
この分散体の固形分濃度は42.4質量%であり、粘度は11.1mPa・sであり、表面張力は31.2mN/mであった。この分散体のインクジェット印刷適性を上記方法にて確認した結果、ノズル詰まりや吐出曲がりはなくインクジェットパターニング性は良好であった。
分散剤を、ソルスパース71000(ルーブリゾール社製,前出)を1.2g、銅微粒子を30g、溶媒をメチルエチルジグリコール28.8gに変更したこと以外は製造実施例10Bと同様にして銅微粒子分散体を得た。
この分散体の固形分濃度は50.9質量%であり、粘度は13.1mPa・sであり、表面張力は30.9mN/mであった。この分散体のインクジェット印刷適性を上記方法にて確認した結果、ノズル詰まりや吐出曲がりはなくインクジェットパターニング性は良好であった。
分散剤を、ソルスパース71000からDisperbyk-145(ビックケミー社製,前出)を1.89g、銅微粒子を30g、溶媒をトルエンからメチルエチルジグリコール28.1gに変更したこと以外は製造実施例10Bと同様にして銅微粒子分散体を得た。
この分散体の固形分濃度は50.7質量%であり、粘度は6.84mPa・sであり、表面張力は28.4mN/mであった。この分散体のインクジェット印刷適性を上記方法にて確認した結果、ノズル詰まりや吐出曲がりはなくインクジェットパターニング性は良好であった。
製造実施例1Bで得られた分散体を固形分30質量%となるようにトルエンで調整し、厚さ200μmのポリエチレンナフタレート(PEN)フィルム(帝人デュポンフィルム(株)製「テオネックスQ65FA」、融点:270℃)の平滑面側に、スピンコートにより全面塗布した。次いで、溶媒成分を乾燥させ、有機物を除去するために、160℃で30分間加熱した。
続いて、マイクロ波表面波プラズマ処理装置(MSP-1500、ミクロ電子(株)製)により焼成処理を行った。プラズマ処理による焼成は、水素ガスを用い、水素導入圧力30Pa、マイクロ波出力600Wで、5分間焼成を行い、導電性基板を得た。基板表面の温度を熱電対で測定したところ、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に160℃に到達した。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例2Bで得られた分散体を用いたこと以外は、実施例1Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例3Bで得られた分散体を固形分30質量%となるようにトルエンで調整し、厚さ200μmのポリエチレンナフタレート(PEN)フィルム(帝人デュポンフィルム(株)製「テオネックスQ65FA」、融点:270℃)の平滑面側に、スピンコートにより全面塗布した。有機物を除去するための加熱は行わなかった。
続いて、マイクロ波表面波プラズマ処理装置(MSP-1500、ミクロ電子(株)製)により焼成処理を行った。プラズマ処理による焼成は、水素ガスを用い、水素導入圧力30Pa、マイクロ波出力600Wで、10分間焼成を行い、導電性基板を得た。基板表面の温度を熱電対で測定したところ、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に160℃に到達した。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例4Bで得られた分散剤を用いたこと以外は、実施例3Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例1Bで得られた分散剤を用いたこと以外は、実施例3Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例2Bで得られた分散剤を用いたこと以外は、実施例3Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例6Bで得られた分散剤を用いたこと以外は、実施例3Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例7Bで得られた分散剤を用いたこと以外は、実施例3Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
プラズマ処理条件を、マイクロ波出力650Wとしたこと以外は、実施例1Bと同様にして導電性基板を得た。基板表面の温度を熱電対で測定したところ、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に180℃に到達した。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
プラズマ処理条件を、マイクロ波出力650Wとしたこと以外は、実施例2Bと同様にして導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第3表に示す。
製造実施例10Bで得られた分散体を固形分30質量%となるようにトルエンで調整し、厚さ200μmのポリエチレンナフタレート(PEN)フィルム(帝人デュポンフィルム(株)製「テオネックスQ65FA」、融点:270℃)の平滑面側に、スピンコートにより全面塗布した。次いで、溶媒成分を乾燥させ、有機物を除去するために、大気中160℃で30分間加熱した。
続いて、マイクロ波表面波プラズマ処理装置(MSP-1500、ミクロ電子(株)製)により焼成処理を行った。プラズマ処理による焼成は、水素ガスを用い、水素導入圧力30Pa、マイクロ波出力500Wで、5分間焼成を行い、導電性基板を得た。基板表面の温度を熱電対で測定したところ、プラズマ処理前は25℃に保持されていたものが、プラズマ照射終了時に160℃に到達した。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第4表に示す。
製造実施例11Bで得られた分散体を用いたこと以外は、実施例11Bと同様にして、導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第4表に示す。
製造実施例12Bで得られた分散体を用いたこと以外は、実施例11Bと同様にして、導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第4表に示す。
製造実施例13Bで得られた分散体を用いたこと以外は、実施例11Bと同様にして、導電性基板を得た。得られた基板に変形などはなかった。
得られた導電性基板について、上記方法により評価した結果を第4表に示す。
分散剤をソルスパース16000(ルーブリゾール社製、主鎖:ポリエチレンイミン骨格、側鎖:12-ヒドロキシステアリン酸エステル)に変更したこと以外は、実施例3Bと同様にして、導電性基板を得た。得られた導電性基板について、上記方法により評価した結果を第3表に示す。得られた基板に変形などはなかったが、導電性基板の表面抵抗は108Ω/□以上と高く、測定することができなかった。マイクロ波表面波プラズマにより、分散剤に起因する有機物が分解されず、残存したためと考えられる。
分散剤をオレイルアミンに変更したこと以外は、製造実施例7Bと同様にして、銅微粒子分散体を得た。該分散体を加圧ろ過したところろ過することができなかった。また、STEM観察を行ったところ、凝集体が多く存在しており、インクジェット印刷を試みたが、インクを吐出することができなかった。
分散剤をcolorburst2176(ルーブリゾール社製、無水コハク酸)に変更したこと以外は、製造実施例7Bと同様にして、銅微粒子分散体の製造を試みたが、直ちに凝集・沈降し、分散体を得ることはできなかった。
分散剤をDisperbyk-116(ビックケミー社製、ブチルアクリレート、ブチルメタクリレートからなるアクリル分散剤)に変更したこと以外は、製造実施例7Bと同様にして分散体を得た。該分散体を加圧ろ過したところろ過することができなかった。また、STEM観察を行ったところ、凝集体が多く存在しており、インクジェット印刷を試みたが、インクを吐出することができなかった。
Claims (17)
- 金属微粒子、高分子分散剤、及び分散媒を含有する金属微粒子分散体であって、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエステル骨格を有し、該ポリエステル骨格が、バレロラクトンから誘導される構成単位、及びカプロラクトンから誘導される構成単位の少なくとも一方を有し、該構成単位の数の合計が、平均値として、10以上であり、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする金属微粒子分散体。
- 金属微粒子、高分子分散剤、及び分散媒を含有する金属微粒子分散体であって、金属微粒子の平均一次粒子径が0.001~0.5μmであり、高分子分散剤が主鎖及び側鎖の少なくとも一方にポリエーテル骨格を有し、かつ該高分子分散剤の含有量が金属微粒子の含有量100質量部に対して、0.1~100質量部であることを特徴とする金属微粒子分散体。
- 前記ポリエーテル骨格が、ポリエチレングリコール及びポリプロピレングリコールの少なくとも一方を構成単位として含む請求項2に記載の金属微粒子分散体。
- 前記高分子分散剤の側鎖がポリエステル骨格又はポリエーテル骨格であり、主鎖がポリアミン骨格又はポリイミン骨格である請求項1~3のいずれかに記載の金属微粒子分散体。
- 金属微粒子分散体を構成する金属が、金、銀、銅、ニッケル、白金、パラジウム、スズ、鉄、クロム、インジウム、ケイ素、及びゲルマニウムからなる群から選ばれる少なくとも1種である請求項1~4のいずれかに記載の金属微粒子分散体。
- 前記金属微粒子が、銅微粒子である請求項1~4に記載の金属微粒子分散体。
- 前記銅微粒子が、錯化剤及び保護コロイドの存在下で、2価の銅酸化物と還元剤とを媒液中で混合して生成したものである請求項6に記載の金属微粒子分散体。
- 前記錯化剤における配位子のドナー原子が、窒素、酸素、及び硫黄からなる群から選ばれる少なくとも1種である請求項6又は7に記載の金属微粒子分散体。
- 前記保護コロイドがタンパク質系保護剤である請求項7又は8に記載の金属微粒子分散体。
- 前記高分子分散剤の主鎖がポリエチレンイミンからなる請求項4~9のいずれかに記載の金属微粒子分散体。
- 前記高分子分散剤の主鎖がポリアリルアミンからなる請求項4~9のいずれかに記載の金属微粒子分散体。
- 前記分散媒が、脂肪族炭化水素、芳香族炭化水素、ケトン、エステル及びアルコールからなる群より選ばれる少なくとも1種である請求項1~11のいずれかに記載の金属微粒子分散体。
- 基材上に、請求項1~12のいずれかに記載の金属微粒子分散体を含む塗布液をパターン状に印刷して印刷層を形成し、該印刷層を焼成処理してパターン状の金属微粒子焼結膜を形成する導電性基板の製造方法。
- 前記焼成が、マイクロ波エネルギーの印加により発生する表面波プラズマによる焼成である請求項13に記載の導電性基板の製造方法。
- 前記焼成が、不活性ガス雰囲気下及び/又は還元性ガス雰囲気下で発生する表面波プラズマによるものである請求項14に記載の導電性基板の製造方法。
- 前記焼成が、(i)酸素を含む雰囲気下で165℃以下で焼成する工程、及び(ii)不活性ガス雰囲気下及び/又は還元性ガス雰囲気下で表面波プラズマにより165℃以下で焼成する工程からなるものである請求項13に記載の導電性基板の製造方法。
- 請求項13~16のいずれかに記載の製造方法により製造した導電性基板。
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| US13/497,555 US9497859B2 (en) | 2009-09-30 | 2010-09-06 | Metal microparticle dispersion, process for production of electrically conductive substrate, and electrically conductive substrate |
| JP2011534163A JP5723283B2 (ja) | 2009-09-30 | 2010-09-06 | 金属微粒子分散体、導電性基板の製造方法及び導電性基板 |
| KR1020127007403A KR101719850B1 (ko) | 2009-09-30 | 2010-09-06 | 금속 미립자 분산체, 도전성 기판의 제조 방법 및 도전성 기판 |
| US15/275,997 US20170013711A1 (en) | 2009-09-30 | 2016-09-26 | Metal microparticle dispersion, process for production of electrically conductive substrate, and electrically conductive substrate |
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| US15/275,997 Division US20170013711A1 (en) | 2009-09-30 | 2016-09-26 | Metal microparticle dispersion, process for production of electrically conductive substrate, and electrically conductive substrate |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101719850B1 (ko) | 2017-03-24 |
| KR20120090987A (ko) | 2012-08-17 |
| JP5982033B2 (ja) | 2016-08-31 |
| CN102596455A (zh) | 2012-07-18 |
| CN103170618A (zh) | 2013-06-26 |
| CN104588643B (zh) | 2017-08-29 |
| JP5723283B2 (ja) | 2015-05-27 |
| US20170013711A1 (en) | 2017-01-12 |
| US20120267151A1 (en) | 2012-10-25 |
| CN102596455B (zh) | 2015-02-04 |
| JPWO2011040189A1 (ja) | 2013-02-28 |
| US9497859B2 (en) | 2016-11-15 |
| JP2015164131A (ja) | 2015-09-10 |
| CN104588643A (zh) | 2015-05-06 |
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