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WO2010126254A3 - Source supplying unit, thin film depositing apparatus, and method for depositing thin film - Google Patents

Source supplying unit, thin film depositing apparatus, and method for depositing thin film Download PDF

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Publication number
WO2010126254A3
WO2010126254A3 PCT/KR2010/002543 KR2010002543W WO2010126254A3 WO 2010126254 A3 WO2010126254 A3 WO 2010126254A3 KR 2010002543 W KR2010002543 W KR 2010002543W WO 2010126254 A3 WO2010126254 A3 WO 2010126254A3
Authority
WO
WIPO (PCT)
Prior art keywords
source material
thin film
depositing
supplying unit
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/002543
Other languages
French (fr)
Other versions
WO2010126254A2 (en
Inventor
Chang Ho Kang
Sung Tae Namgoong
Jun Seo Rho
Whang Sin Cho
Hyung Seok Yoon
Kyung Bin Bae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SNU Precision Co Ltd
Original Assignee
SNU Precision Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SNU Precision Co Ltd filed Critical SNU Precision Co Ltd
Priority to JP2012508391A priority Critical patent/JP5372243B2/en
Priority to CN201080019359.3A priority patent/CN102414798B/en
Publication of WO2010126254A2 publication Critical patent/WO2010126254A2/en
Publication of WO2010126254A3 publication Critical patent/WO2010126254A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/246—Replenishment of source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/544—Controlling the film thickness or evaporation rate using measurement in the gas phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Provided are a source supplying unit, a thin film depositing apparatus including the source supplying unit, and a method for depositing a thin film. The source supplying unit includes a liquefaction part configured to liquefy a source material, an evaporation part communicating with the liquefaction part to evaporate the liquefied source material, and an injector communicating with the evaporation part to inject the evaporated source material. The liquefaction part includes a pot having a cylinder shape to store the source material, a piston part inserted to a side of the pot to discharge the source material, and a liquefaction heating part configured to heat the pot to liquefy the source material. After a solid source material is liquefied, a necessary portion is evaporated from the source material and supplied, thus achieving large capacity in source material and minimizing the amount of heat consumed for evaporating and supplying the source material.
PCT/KR2010/002543 2009-04-27 2010-04-23 Source supplying unit, thin film depositing apparatus, and method for depositing thin film Ceased WO2010126254A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2012508391A JP5372243B2 (en) 2009-04-27 2010-04-23 Raw material supply unit, thin film deposition apparatus and thin film deposition method
CN201080019359.3A CN102414798B (en) 2009-04-27 2010-04-23 Raw material supply unit, thin film deposition device and method for depositing thin film

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0036633 2009-04-27
KR1020090036633A KR100936378B1 (en) 2009-04-27 2009-04-27 Unit for supplying source and apparatus for depositioning thin film and method for depositioning thin film

Publications (2)

Publication Number Publication Date
WO2010126254A2 WO2010126254A2 (en) 2010-11-04
WO2010126254A3 true WO2010126254A3 (en) 2011-01-20

Family

ID=41809671

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/002543 Ceased WO2010126254A2 (en) 2009-04-27 2010-04-23 Source supplying unit, thin film depositing apparatus, and method for depositing thin film

Country Status (5)

Country Link
JP (1) JP5372243B2 (en)
KR (1) KR100936378B1 (en)
CN (1) CN102414798B (en)
TW (1) TWI386501B (en)
WO (1) WO2010126254A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101172275B1 (en) * 2009-12-31 2012-08-08 에스엔유 프리시젼 주식회사 Vaporizing apparatus and control method for the same
KR101252912B1 (en) * 2010-08-11 2013-04-09 주식회사 야스 Evaporator With Heater Inserted
CN102373422A (en) * 2010-08-24 2012-03-14 鸿富锦精密工业（深圳）有限公司 Vacuum coating system
KR101359636B1 (en) * 2012-07-04 2014-02-06 주식회사 선익시스템 Organic matter feedign apparatus and method
JP5837869B2 (en) * 2012-12-06 2015-12-24 株式会社フジキン Raw material vaporizer
KR101461738B1 (en) * 2012-12-21 2014-11-14 주식회사 포스코 Apparatus for heating materials and coatting system having the same
KR101456264B1 (en) * 2012-12-27 2014-11-03 주식회사 선익시스템 Thin Film Deposition Apparatus
KR101499527B1 (en) * 2013-06-14 2015-03-10 엘아이지에이디피 주식회사 Evaporating Apparatus And Evaporating Method
WO2014208789A1 (en) * 2013-06-25 2014-12-31 에스엔유 프리시젼 주식회사 Thin film deposition device provided with supply unit
KR102285385B1 (en) 2014-08-04 2021-08-04 삼성디스플레이 주식회사 Apparatus for manufacturing display apparatus
KR101713112B1 (en) * 2016-07-26 2017-03-08 에스엔유 프리시젼 주식회사 Deposition material supply apparatus which can continuously charged
KR102493131B1 (en) * 2018-02-06 2023-01-31 삼성디스플레이 주식회사 Apparatus for deposition a organic material, and deposition method of a organic material using the same
CN111036467A (en) * 2018-10-15 2020-04-21 许铭案 Three-in-one spraying machine

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11229149A (en) * 1998-02-18 1999-08-24 Nissin Electric Co Ltd Liquid raw material vaporization film forming device and liquid raw material vaporization film forming method
US20010022272A1 (en) * 1998-08-03 2001-09-20 George Plester Methods for measuring the degree of ionization and the rate of evaporation in a vapor deposition coating system
WO2005116290A1 (en) * 2004-05-27 2005-12-08 Sidrabe, Inc. Method and apparatus for vacuum deposition by vaporizing metals and metal alloys
WO2008040329A1 (en) * 2006-09-29 2008-04-10 Von Ardenne Anlagentechnik Gmbh Vacuum coating method, and arrangement for carrying out said method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6233762A (en) * 1985-08-06 1987-02-13 Hitachi Ltd Vacuum deposition device
JPS63243264A (en) * 1987-03-31 1988-10-11 Matsushita Electric Ind Co Ltd Thin film manufacturing equipment
JPH11229144A (en) * 1998-02-12 1999-08-24 Hitachi Tool Eng Ltd Coated tool
TW200304955A (en) * 2002-04-05 2003-10-16 Matsushita Electric Industrial Co Ltd Method and apparatus for producing resin thin film
JP2003342716A (en) * 2002-05-27 2003-12-03 Sumitomo Electric Ind Ltd GaN crystal growth method
WO2005116296A1 (en) * 2004-05-25 2005-12-08 Kurita Water Industries Ltd. Method of cooling water treatment and treatment chemical
JP4046294B2 (en) * 2005-09-30 2008-02-13 学校法人慶應義塾 Apparatus for generating bubbles or droplets in liquid and method for generating bubbles or droplets in liquid
KR100729097B1 (en) * 2005-12-28 2007-06-14 삼성에스디아이 주식회사 Evaporation source and thin film deposition method using the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11229149A (en) * 1998-02-18 1999-08-24 Nissin Electric Co Ltd Liquid raw material vaporization film forming device and liquid raw material vaporization film forming method
US20010022272A1 (en) * 1998-08-03 2001-09-20 George Plester Methods for measuring the degree of ionization and the rate of evaporation in a vapor deposition coating system
WO2005116290A1 (en) * 2004-05-27 2005-12-08 Sidrabe, Inc. Method and apparatus for vacuum deposition by vaporizing metals and metal alloys
WO2008040329A1 (en) * 2006-09-29 2008-04-10 Von Ardenne Anlagentechnik Gmbh Vacuum coating method, and arrangement for carrying out said method

Also Published As

Publication number Publication date
CN102414798B (en) 2014-05-14
CN102414798A (en) 2012-04-11
KR100936378B1 (en) 2010-01-13
WO2010126254A2 (en) 2010-11-04
JP2012525499A (en) 2012-10-22
TW201105810A (en) 2011-02-16
TWI386501B (en) 2013-02-21
JP5372243B2 (en) 2013-12-18

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