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WO2010120669A3 - Polissage d'un mince substrat métallique pour une pile solaire - Google Patents

Polissage d'un mince substrat métallique pour une pile solaire Download PDF

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Publication number
WO2010120669A3
WO2010120669A3 PCT/US2010/030694 US2010030694W WO2010120669A3 WO 2010120669 A3 WO2010120669 A3 WO 2010120669A3 US 2010030694 W US2010030694 W US 2010030694W WO 2010120669 A3 WO2010120669 A3 WO 2010120669A3
Authority
WO
WIPO (PCT)
Prior art keywords
metallic substrate
thin metallic
polishing
solar cell
roll
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/030694
Other languages
English (en)
Other versions
WO2010120669A2 (fr
Inventor
Joseph Laia
Paul Shufflebotham
Daniel R. Juliano
Robert Martinson
Timothy Kueper
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Miasole
Original Assignee
Miasole
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Miasole filed Critical Miasole
Publication of WO2010120669A2 publication Critical patent/WO2010120669A2/fr
Publication of WO2010120669A3 publication Critical patent/WO2010120669A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/10—Single-purpose machines or devices
    • B24B7/12—Single-purpose machines or devices for grinding travelling elongated stock, e.g. strip-shaped work
    • B24B7/13—Single-purpose machines or devices for grinding travelling elongated stock, e.g. strip-shaped work grinding while stock moves from coil to coil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1698—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible
    • H10F77/1699—Thin semiconductor films on metallic or insulating substrates the metallic or insulating substrates being flexible the films including Group I-III-VI materials, e.g. CIS or CIGS on metal foils or polymer foils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

La présente invention porte sur un procédé de fabrication d'une pile solaire. Le procédé consiste à fournir un mince substrat métallique sous forme de rouleau. Le procédé consiste également à appliquer un abrasif de décapage sur une surface du mince substrat métallique. Le procédé consiste à polir mécaniquement la surface avec l'abrasif de décapage de telle sorte que la surface soit polie pour enlever au moins un défaut de la surface. Le polissage mécanique de la surface du mince substrat métallique est effectué par un procédé de polissage à rouleaux couplés de la surface du mince substrat métallique. En outre, le procédé consiste à déposer une couche absorbante de la pile solaire sur le mince substrat métallique.
PCT/US2010/030694 2009-04-13 2010-04-12 Polissage d'un mince substrat métallique pour une pile solaire Ceased WO2010120669A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/422,620 2009-04-13
US12/422,620 US20100258173A1 (en) 2009-04-13 2009-04-13 Polishing a thin metallic substrate for a solar cell

Publications (2)

Publication Number Publication Date
WO2010120669A2 WO2010120669A2 (fr) 2010-10-21
WO2010120669A3 true WO2010120669A3 (fr) 2011-01-20

Family

ID=42933366

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/030694 Ceased WO2010120669A2 (fr) 2009-04-13 2010-04-12 Polissage d'un mince substrat métallique pour une pile solaire

Country Status (2)

Country Link
US (1) US20100258173A1 (fr)
WO (1) WO2010120669A2 (fr)

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US20100258185A1 (en) * 2008-01-18 2010-10-14 Miasole Textured substrate for thin-film solar cell
US20090229666A1 (en) * 2008-03-14 2009-09-17 Jason Stephan Corneille Smoothing a metallic substrate for a solar cell
US8546172B2 (en) * 2008-01-18 2013-10-01 Miasole Laser polishing of a back contact of a solar cell
US8536054B2 (en) * 2008-01-18 2013-09-17 Miasole Laser polishing of a solar cell substrate
US8586398B2 (en) * 2008-01-18 2013-11-19 Miasole Sodium-incorporation in solar cell substrates and contacts
WO2011040566A1 (fr) * 2009-09-30 2011-04-07 Jx日鉱日石金属株式会社 Substrat semi-conducteur au cdte pour croissance épitaxiale et récipient à substrat
US20120273261A1 (en) 2010-10-20 2012-11-01 Taiwan Green Point Enterprises Co., Ltd. Circuit substrate having a circuit pattern and method for making the same
US8621749B2 (en) * 2010-03-12 2014-01-07 Taiwan Green Point Enterprises Co., Ltd Non-deleterious technique for creating continuous conductive circuits
US8952919B2 (en) 2011-02-25 2015-02-10 Taiwan Green Point Enterprises Co., Ltd. Capacitive touch sensitive housing and method for making the same
GB201018141D0 (en) 2010-10-27 2010-12-08 Pilkington Group Ltd Polishing coated substrates
CN102593256B (zh) * 2012-03-02 2014-07-09 江苏宇天港玻新材料有限公司 一体化cigs薄膜太阳能电池生产设备及其生产方法
CN104993019A (zh) 2015-07-09 2015-10-21 苏州阿特斯阳光电力科技有限公司 一种局部背接触太阳能电池的制备方法
JP6571034B2 (ja) * 2016-03-17 2019-09-04 株式会社東芝 光電変換素子モジュール、太陽電池及び太陽光発電システム
CN110614540A (zh) * 2018-06-20 2019-12-27 北京铂阳顶荣光伏科技有限公司 一种不锈钢衬底的抛光方法和太阳能薄膜电池
US20210035767A1 (en) * 2019-07-29 2021-02-04 Applied Materials, Inc. Methods for repairing a recess of a chamber component
JP7457913B2 (ja) * 2019-12-10 2024-03-29 パナソニックＩｐマネジメント株式会社 研磨装置および研磨方法
CN114310498B (zh) * 2022-01-13 2023-01-24 江苏富乐华半导体科技股份有限公司 一种适用于dpc产品贴膜前处理工艺的研磨方法

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US20090229666A1 (en) * 2008-03-14 2009-09-17 Jason Stephan Corneille Smoothing a metallic substrate for a solar cell
US20100258185A1 (en) * 2008-01-18 2010-10-14 Miasole Textured substrate for thin-film solar cell
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US20090078313A1 (en) * 2007-09-18 2009-03-26 Basol Bulent M Substrate preparation for thin film solar cell manufacturing

Also Published As

Publication number Publication date
US20100258173A1 (en) 2010-10-14
WO2010120669A2 (fr) 2010-10-21

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