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WO2010119982A1 - Matériau à base d'argent ayant une structure hautement conductrice de l'électricité - Google Patents

Matériau à base d'argent ayant une structure hautement conductrice de l'électricité Download PDF

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Publication number
WO2010119982A1
WO2010119982A1 PCT/JP2010/056963 JP2010056963W WO2010119982A1 WO 2010119982 A1 WO2010119982 A1 WO 2010119982A1 JP 2010056963 W JP2010056963 W JP 2010056963W WO 2010119982 A1 WO2010119982 A1 WO 2010119982A1
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Prior art keywords
silver
silver material
sample
temperature
conductivity
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Japanese (ja)
Inventor
博 山下
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METAL LABO CO Ltd
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METAL LABO CO Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Definitions

  • the present invention relates to a silver material having a highly conductive structure used for power transmission cables, wiring materials between audio equipment and electronic equipment or between its components, bonding wires, and the like.
  • Examples of wiring materials for connecting electronic components constituting audio equipment and video equipment include oxygen-free copper (OFC), oxygen-free copper containing silver, oxygen-free copper containing zirconium, and the like. These wiring materials are known to have a relatively high conductivity efficiency than ordinary copper wires, etc., but because of their fine crystal structure, the number of crystal grain boundaries existing in the direction in which electrons are conducted It is known that impurities such as orientation, sulfides and intermetallic compounds have an adverse effect on the conduction efficiency. This may increase the electrical resistance due to grain boundaries and impurities accumulated there. It is thought to work as a capacitor with a very small capacity and to bring in capacitance.
  • Patent Document 2 discloses a wire rod-shaped ingot having a single crystal structure of OFC or a unidirectionally solidified structure in the longitudinal direction or a plastic processing by a slight wire drawing or the like to obtain a copper wire for signal transmission.
  • IACS International Annular Copper Standard
  • tensile strength 20 [kg / mm 2] or less By making IACS (International Annular Copper Standard) 100 [%] or more or tensile strength 20 [kg / mm 2] or less, it is disclosed that the manufactured metal material has extremely excellent signal transmission characteristics. This technique has improved this point because the above-described lattice defects that have conventionally occurred during processing have caused the signal transmission characteristics to deteriorate.
  • the electrical conductivity of the copper wire is set to IACS 100 [%] or more, or the tensile strength is set to 20 [kg / mm 2] or less. ], Because the tensile strength value changes markedly with 20 [kg / mm 2] as a boundary.
  • Patent Document 2 improves signal transmission characteristics by using the above-described signal transmission copper wire.
  • a signal is obtained by adding a plastic processing such as a wire rod ingot having a single crystal structure or a unidirectionally solidified structure in the longitudinal direction or a slight wire drawing to the ingot.
  • a copper wire for transmission is used, in order to obtain a bar-shaped ingot having a single crystal structure and a solidified structure, a very complicated metal solidification control management process such as a heating mold continuous casting method or a chocolate lasky method is required.
  • An object of the present invention is to provide a silver material having a crystal structure that is excellent in mass productivity and maximizes the performance of an electronic component or an electronic device, for example, a highly conductive structure.
  • the silver material of the present invention is subjected to a final plastic processing for the silver material, that is, after plastic processing to a stage where the crystal structure for the silver material is not changed, and then at least vacuum, an inert gas, and a reducing gas.
  • a recrystallized structure is formed by heat treatment performed in any atmosphere until immediately before the silver material is melted. More specifically, the recrystallized structure of the silver material is a single crystallized structure. Single crystallization means that crystal grains having a polycrystalline structure are enlarged.
  • the recrystallized structure is, for example, coarser than a 4N silver material having a conductivity of 106% or less, in which the size of the crystal grains after the heat treatment is derived by the following formula, and compared to the 4N silver material The grain boundary density per unit volume is small.
  • Conductivity ⁇ X ⁇ 100 / [(R ⁇ m / I 2 ⁇ G) + Y (20 ⁇ t)]
  • R electric resistance [ ⁇ ]
  • m mass of material of measurement length [g]
  • I measurement length [m]
  • t measurement temperature (Celsius)
  • X 100% conductivity material with a length of 1 m and a cross-sectional area of 1 mm 2 , resistance value at 20 degrees (Celsius)
  • Y length of 1 m and cross-sectional area of 1 mm 2 sample temperature
  • the amount ⁇ by which the resistance changes is a low mass temperature coefficient near 20 degrees (degrees Celsius) of the sample.
  • the silver material on which the recrystallized structure is formed has the following attributes. (1) The conductivity ⁇ exceeds 106 [%]. (2) The elongation obtained by a metal material tensile test under the following conditions exceeds 5%. JISZ2201 (1998) JIS9 tensile test piece, using JISZ2241 (1998) metal material tensile test method, test chamber temperature 22 [° C.], sample average wire diameter 1.54 [mm], gauge distance 50 [mm] ], Both ends of the sample were fixed, the initial load was 2 [N], the average load of 1.0 [mm] displacement was 199 [N], the maximum load was 353 [N], and the test speed was 5 [mm / min]. Implementation.
  • Such a silver material is, for example, a molding step of molding a silver material having a polycrystalline structure into a predetermined shape and size at room temperature, and the entire formed material exceeds the recrystallization temperature of the silver material, and While maintaining the temperature near the melting point of the silver material, a heating step of heating the silver material to just before melting in a vacuum or an inert gas atmosphere, and the heated silver material, maintaining the temperature And an annealing step of annealing in a vacuum or an inert gas atmosphere over a time longer than the above-described time, whereby the crystal structure of the material has a structure in which the conduction velocity of the conducting electrons is faster than that before heating (this book In the specification, it is referred to as a “highly conductive structure”).
  • the crystal structure of the silver material manufactured through the heating / annealing process is important for achieving the above-described high-conductivity structure that the entire crystal structure is homogeneous when completed.
  • the processing after heating or annealing is distorted somewhere and cannot be made into a highly conductive structure. This will be described based on the physical properties inherent to silver materials.
  • the silver material conducts electricity well because there are electrons that move freely in the crystal. When electrons are conducted through a crystal having periodicity without defects, they do not receive resistance in any direction except for the influence of thermal vibration (highly conductive state). However, in the process of producing a silver material, processing such as stretching and stretching is generally performed. Also in the present invention, the silver material is formed into a predetermined shape and size at room temperature.
  • the heating process heats the material by mixing a reducing gas composed of hydrogen gas or a hydrogen-containing gas into the vacuum or an inert gas atmosphere. Thereby, the chemical reaction of the starting material in a heating process, ie, the silver material before starting heat processing, can be prevented. More preferably, the drawing of at least one of the reducing gas and the inert gas and the supply of these gases are repeated.
  • the silver material of the present invention has a structure in which the crystal grains are substantially isotropic in the longitudinal direction and the density is substantially uniform at the central portion and the peripheral portion in the cross section, the conductivity is remarkably high, The conduction efficiency per unit time is improved. Therefore, the performance of electronic devices and electronic parts can be maximized by using the wiring. Loss is also significantly reduced, so improvement in energy conversion efficiency and transmission efficiency is also expected.
  • the silver material of the present invention has an elongation rate of more than 5 [%] obtained by a metal material tensile test, and a maximum load obtained by a three-point bending compression test of less than 30 [N], which is sufficiently flexible. Therefore, the wiring of the electronic component or the electronic device becomes extremely easy, and the reliability of the operation after the wiring can be increased.
  • FIG. 1 is a block diagram of a vacuum furnace and its control mechanism suitable for carrying out the manufacturing method of the present invention.
  • FIG. 2 is a process explanatory diagram of the production method of the present invention.
  • FIG. 3 is a schematic explanatory diagram of the control operation according to the present embodiment.
  • FIG. 4 is a chart showing an example of measurement results of performance when the heating condition is changed using a silver wire manufactured by the manufacturing method of the present invention as a sample.
  • FIG. 5A is a photomicrograph showing the crystal structure of the vertical cross section of Sample A.
  • FIG. 5B is a photomicrograph showing the crystal structure of the cross section of Sample A.
  • 6A is a photomicrograph showing the crystal structure of the vertical cross section of Sample B.
  • FIG. 5A is a photomicrograph showing the crystal structure of the vertical cross section of Sample A.
  • FIG. 6B is a photomicrograph showing the crystal structure of the cross section of Sample B.
  • FIG. 7A is a photomicrograph showing the crystal structure of the vertical cross section of Sample C.
  • FIG. 7B is a photomicrograph showing the crystal structure of the cross section of Sample C.
  • the best embodiment of the present invention will be described below.
  • the silver material used as the element of the silver wire has a polycrystalline FCC structure, and is a metal material having the highest electron conductivity at the spread level. Soft and easy to handle and difficult to oxidize.
  • the number of intrinsic electrons is larger than that of iron, aluminum, etc., the conduction speed of electrons is faster than copper, and the extensibility is excellent. This is a major reason for using a silver material in this embodiment.
  • the purity of the silver material is preferably about “4N”. [Furnace and its control mechanism] The furnace and its control mechanism used in this embodiment will be described.
  • a vacuum furnace having a configuration shown in FIG. 1 is used.
  • a heating element 105 is provided on the side wall of the electric furnace 103 in the container 101, and a starting material (a silver material before heat treatment, which will be described below) is opened in a heating space surrounded by the heating element 105 through an opening / closing door (not shown).
  • the starting material is a silver wire 203 wound around a quartz tube 201 that can withstand high temperatures.
  • a gas supply valve 107 and a gas vent valve 109 are attached to the heating space via a pipe line connected to the outside of the space.
  • an inert gas and a hydrogen-containing gas are mixed from the gas supply device 133 through the valve drive mechanism 131.
  • a gas suction mechanism (not shown) is connected to the gas vent valve 109, and gas and moisture in the heating space are sucked through the valve drive mechanism 131 by this gas suction mechanism.
  • a state where all the gas and the like are sucked is a vacuum state.
  • the current atmospheric pressure in the heating space is measured by the pressure gauge 123, and the current temperature in the heating space is measured by the thermometer 125.
  • the measurement results of the pressure gauge 123 and the thermometer 125 are output to the control device 121, where the state of the heating space is monitored.
  • the control device 121 is a kind of computer having a memory and a processor.
  • the processor inputs various setting conditions and parameters stored in the memory from the pressure gauge 123 and the thermometer 125 according to a computer program prepared in advance.
  • the control operation for manufacturing the silver material is executed based on the measured data. Specifically, this control operation is ON / OFF switching of the heating element 105 performed based on the measurement results of the pressure gauge 123 and the thermometer 125.
  • the control device 121 also controls valve opening / closing in the valve drive mechanism 131. In other words, at a timing according to the set conditions, the gas supply valve 107 is opened to supply gas into the heating space, or it is stopped, or the gas vent valve 109 is opened to degas or drain water, or Or stop.
  • a silver wire can be manufactured by implementing each process shown in FIG. 2 using this vacuum furnace and control mechanism.
  • Preparation step S1 Prepare a silver block of sufficient size to obtain the required amount of silver wire 203, shape, size, and heating conditions (heating time, atmospheric pressure, temperature, type of gas used, amount of gas mixed) Etc.), annealing conditions (time, degassing timing, etc.) and finishing conditions (removal timing, etc.). Since the heating conditions, annealing conditions, and finishing conditions differ depending on the thickness and length of the silver wire 203, these are preset in the memory of the control device 121.
  • Heating conditions, annealing conditions, and finishing conditions differ depending on the thickness and length of the silver wire 203, these are preset in the memory of the control device 121.
  • Molding step S2 The silver block is processed at room temperature to form a silver wire 203, which is used as a starting material.
  • the silver wire 203 is formed by, for example, a drawing process using a diamond die, that is, a process of passing a silver lump through a die having a hole and drawing it to a predetermined size.
  • the processing method is not limited to this, and may be arbitrary, for example, wire drawing or other modes.
  • it is not necessary to consider crystal distortion due to processing, mixing of impurities, and the like.
  • the necessary amount can be obtained in a relatively short time. For example, a silver wire 203 of 10 m or more can be obtained in a few minutes. Thereafter, the silver wire 203 is wound around the quartz tube 201 to prepare for heating.
  • Heating step S3 The silver wire 203 wound around the quartz tube 201 is set in the heating space of the vacuum furnace, and the control device 121 starts control for heating and annealing.
  • An overview of the control operation by the control device 121 is shown in FIG. Referring to FIG. 3, the control device 121 gradually increases the heat generation temperature of the heating element 105 from the start time t1 to the time t2 when the temperature of the heating space first reaches the predetermined temperature TH0 from the normal temperature.
  • This temperature TH0 is a temperature that exceeds the recrystallization temperature (around 300 degrees Celsius) of the silver wire 203 and near the melting point of the silver material (961 degrees Celsius).
  • the melting point is generally the temperature at which the silver material begins to melt, but the temperature at which the silver material actually begins to melt varies depending on the type and amount of oxygen and other impurities contained in the silver material. Some silver materials do not melt even near the melting point, while others start to melt at about 900 degrees Celsius. If the type and amount of impurities contained in the silver material are known in advance, the temperature TH0 can be set in the control device 121 from the beginning. The temperature is measured, and the temperature at that time is set in the control device 121 as the predetermined temperature TH0. The time between the time points t1 and t2 is set to about the time required for vacuum annealing described later. By gradually heating in this way, the temperature of the entire silver wire 203 rises almost uniformly.
  • the controller 121 When reaching the time point t2, the controller 121 substantially uniformly heats the entire silver wire 203 in the heating space while maintaining the temperature TH0. At that time, the control device 121 supplies an inert gas, a reducing gas, or a gas mixed thereof to the heating space, and removes impurities in the crystal of the silver wire 203, particularly impurities remaining in the crystal grain boundary. At the same time, crystal grain growth is stabilized.
  • the inert gas is, for example, helium gas or argon gas.
  • the reducing gas is, for example, hydrogen or a hydrogen-containing gas. Since the pressure and temperature of the heating space are increased by mixing these supplied gases, the extraction of moisture generated by the reduction action and the supply of these gases (including circulation in the heating space) are repeated.
  • FIG. 4 shows an example of performance measurement results when the silver wire 203 manufactured by the above manufacturing method is used as a sample and the heating conditions are changed.
  • the measurement was performed according to the test of JIS-H0505 (volume resistivity and conductivity measuring method of non-ferrous metal material).
  • the length of the sample is 1 [m]
  • the cross-sectional area of the sample is slightly different in thickness at the time of processing.
  • the resistance measurement method was a double bridge method, in which the resistance measurement current was 1 [A], the test temperature was 23 degrees Celsius (23 [° C.]), and the humidity was 50 [%].
  • “500” of the material symbol “Ag500-1H” indicates that the temperature TH0 that is maintained substantially constant for the time t2-t3 in the above heating process is 500 degrees Celsius, and “ ⁇ 1H” is t2-t3. This means that the time of 1 is 1 hour.
  • ⁇ 2H is obtained by setting the time of t2 ⁇ t3 to 2 hours.
  • Recrystallization is a function of temperature and time.
  • the thermal energy for recrystallization needs to be a certain amount or more.
  • the recrystallization temperature is 500 degrees Celsius, as can be seen from FIG. 4, in about 1 hour, the volume resistivity is around 1.630 ⁇ 10 ⁇ 6 [ ⁇ ⁇ cm], and from “4N silver” In comparison with the wire, the improvement was not so much, but even in the same hour, a great improvement was seen from around 650 degrees Celsius. That is, the cross sectional area was less than 1.62 ⁇ 10 ⁇ 6 [ ⁇ ⁇ cm] in terms of 1.98 [mm 2].
  • the volume resistivity of aluminum (Al) having the same average cross-sectional area is 2.655 ⁇ 10 ⁇ 6 [ ⁇ ⁇ cm]
  • the volume resistivity of gold (Au) is 2.19 ⁇ 10 ⁇ 6 [ ⁇ ⁇ cm].
  • the volume resistivity of pure copper (Cu) is 1.673 ⁇ 10 ⁇ 6 [ ⁇ ⁇ cm].
  • the conduction speed of electrons is about 1.5 times faster than that of copper. Therefore, the conduction efficiency of the silver wire 203 obtained by this manufacturing method is converted to a cross-sectional area of 1.98 [mm2]. So now it is better than any metal material. Excellent electrical conductivity means that the same resistance value is fine, and it is less susceptible to the influence of an electric field.
  • the conversion efficiency was significantly improved. Specifically, a commercially available 15 [w] power generation module is exposed to direct sunlight and measured with a hollow enamel resistor so that the wiring material of normal copper wire is 10 [w] at 5 [m]. While adjusting. The module output voltage was measured with a DC voltmeter and found to be 10.8 [v]. Thereafter, in this state, the wiring material was replaced with the silver wire 203, and the voltage was measured. The result was 12.8 [v]. That is, the conversion efficiency was improved by about 20%.
  • Samples were separately prepared in a public institution. The structure test, image observation, conductivity and load test (tensile / compression test) were conducted. The three types of samples are manufactured under the following conditions.
  • Sample A comparative object
  • Sample B Example 1: A 4N pure wire (processed under the same conditions as Sample A) formed by cold working was heated at 750 degrees Celsius for 2 hours in an inert gas atmosphere and then cooled for 2 hours.
  • Sample C (Example 2): Heat-treated in an inert gas atmosphere for 6 hours at around 900 degrees Celsius, a temperature just before melting 4N silver wire (processed under the same conditions as Sample A) formed by cold working After cooling for 6 hours.
  • FIGS. Sample A FIG. 5A is a photomicrograph of the vertical cross section of sample A, and FIG. 5B is a photomicrograph of the same cross section. Referring to these photographs, it is confirmed that the structure is oriented in the longitudinal direction by drawing, but many strains and defects are observed.
  • Crystal grains are oriented in the longitudinal direction of the wire, and the cross section has different densities at the central portion and the peripheral portion. ⁇ What to understand> -It is presumed that the plasticity is remarkably lowered and work hardening occurs due to the distortion and defect caused by the drawing process. Elongation and bending properties are significantly deteriorated before processing. ⁇ Because the crystal is broken, the periodicity of atoms is broken, and defects are generated, so the structure prevents the flow of electrons. -A potential difference occurs on the metal surface due to strain and defects, and a local battery is formed and corrosion is easily promoted.
  • FIG. 6A is a photomicrograph of the vertical cross section of sample B
  • FIG. 6B is a photomicrograph of the same cross section. From these photographs, it is observed that the distortion and defects are eliminated, and the entire structure is homogeneous and dense. It is observed that crystal grains (structure with regularity, face-centered cubic in the case of silver) are larger than Sample A and are oriented in the longitudinal direction of the wire. In the cross section, the density is substantially uniform at the central portion and the peripheral portion.
  • FIG. 7A is a photomicrograph of the vertical cross section of sample C
  • FIG. 7B is a photomicrograph of the same cross section.
  • the crystal grains grow larger than Sample B and have the same size, and periodicity and homogeneity can be confirmed.
  • the number of crystal grain boundaries per unit volume and the total area are greatly reduced.
  • impurities such as metal oxides / intermetallic compounds, oxygen and inevitable elements precipitated at the grain boundaries is also greatly reduced.
  • the amount of change ⁇ is the low mass temperature coefficient near 20 degrees (degrees Celsius) of the sample.
  • Sample C was 107.8% higher than the published value so far, and the conductivity was higher than any other kind of metal. In other words, it turned out that it has evolved into a metal material that can be called a new material.
  • the tensile test was performed at a test chamber temperature of 22 [° C.], with both ends of the specimen (sample) fixed, an initial load of 2 [N], and a test speed of 5 [mm / min].
  • the compression test was a three-point bending compression test with a jib span of 20 [mm], a metal fitting inner radius R2, and an initial load of 0.1 [N].
  • JISZ2201 (1998) JIS9 Tensile test piece, using JISZ2241 (1998) metal material tensile test method, test chamber temperature 22 [° C], sample average wire diameter 1.54 [mm], gauge distance 50 [mm], both ends of sample
  • the initial load is 2 [N]
  • the average load is 1.0 [mm]
  • the average load is 199 [N]
  • the maximum load is 353 [N]
  • the test speed is 5 [mm / min]. It was found that the elongation obtained by the test exceeded at least 5%, which is the test result for sample A.
  • the silver wire 203 Since the silver wire 203 is used as a wiring material for an electronic component or connected to a ground part, the conduction efficiency is increased, so that no burden is imposed on the operation of the electronic component. Therefore, the failure occurrence probability is also reduced.
  • the softness and high bending strength of the silver wire 203 for the bonding wire of the semiconductor chip the original processing capability of the semiconductor chip can be exhibited. It can also contribute to improving processing capacity.
  • the silver wire 203 as a power transmission cable, loss and emission of unnecessary electromagnetic waves are remarkably reduced, which can contribute to environmental problems in various fields including energy problems.
  • a silver coil 203 and a dynamo using the same can be manufactured by covering the silver wire 203.
  • a silver coil it is necessary to coat
  • the reason for this is that the surface of general silver materials reacts with enamel to produce sulfides, which lowers the electrical conductivity and physical strength.
  • vinyl, and sulfur gas and the like are emitted and react with the surface.
  • the silver wire 203 produced by the production method of the present invention is resistant to corrosion, that is, it is strong against chemical substances, so that the characteristics do not deteriorate even if it is coated with enamel or vinyl. Therefore, a silver coil can be manufactured.
  • the silver wire 203 can also be used as a high performance electrical contact.
  • migration a phenomenon in which atoms move little by little due to collision of electrons flowing through metal atoms in the wiring, etc.
  • the silver wire 203 manufactured by the manufacturing method of the present invention has high corrosion resistance and migration hardly occurs, a high-performance electrical contact can be realized.
  • a silver wire 203 wound around a quartz tube 201 is used as a starting material in a heating space of a vacuum furnace is shown, but an auxiliary component such as the quartz tube 201 is not necessarily used, and silver
  • the material may be placed directly in the heating space. Moreover, it can replace with a wire, and can also use the printed circuit board which drawn the wiring pattern with the silver material, a lead frame, the plate-shaped or sheet-shaped silver plate which gave the rolling process, and silver night as a starting material.
  • the heat treatment may be performed not only in an inert gas or reducing gas atmosphere but also in an atmosphere of at least one of vacuum, inert gas, and reducing gas.
  • the crystal grain size and orientation can be adjusted by controlling the heat treatment temperature so as to form a temperature gradient in a predetermined direction of the silver material during cooling.
  • FIG. 1 shows an example of a vacuum furnace having a simple structure that simply heats the starting material, but a mechanism for applying a strong electric field is added to the back side of the heating element 105 of the furnace, and the above heating process is performed.
  • an electric field having different polarities is applied to one end and the other end of the silver material having both ends, so that the crystal orientation of the silver material can be forcibly aligned. .
  • the conduction speed of electrons becomes faster, and further improvement of the conduction efficiency can be expected.
  • the silver material of the present invention includes an antistatic unit, a printed circuit board, a capacitor, an antenna for a communication device, a bonding wire for a semiconductor chip, a lead frame, an automotive power system wiring material, a solar power generation lead wire, a lightning rod, a medical device wiring material, In addition, it can be used in a wide range of fields such as sensing materials that detect electrons, electrical contacts, and connectors.

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Abstract

L'invention porte sur un matériau à base d'argent qui est hautement approprié pour une fabrication en série et présente une structure cristalline capable de permettre la meilleure performance d'un composant ou dispositif électronique. Après le traitement plastique final d'un matériau à base d'argent, un traitement thermique est effectué au moins dans l'une des conditions suivantes : sous vide, dans une atmosphère de gaz inerte ou dans une atmosphère de gaz réducteur, jusqu'à juste avant que le matériau à base d'argent ne commence à fondre, formant par là un tissu recristallisé. Dans ce tissu recristallisé, qui comprend des monocristaux, les grains cristallins sont plus grands que dans un matériau à base d'argent 4N ayant une conductivité électrique de 106 (%) ou moins et ont une densité des joints de grains par unité de volume inférieure à celle du matériau à base d'argent 4N.
PCT/JP2010/056963 2009-04-14 2010-04-14 Matériau à base d'argent ayant une structure hautement conductrice de l'électricité Ceased WO2010119982A1 (fr)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013118831A1 (fr) * 2012-02-09 2013-08-15 キヤノン電子株式会社 Procédé de production d'un fil de connexion en argent et fil de connexion en argent
US10018420B2 (en) 2012-01-27 2018-07-10 Canon Denshi Kabushiki Kaisha Metal wire heat treatment method using heat treatment jig

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163505A (ja) * 1985-01-14 1986-07-24 住友電気工業株式会社 画像表示機器、音響機器用導体の製造方法
JPH06235034A (ja) * 1993-02-10 1994-08-23 Res Inst Electric Magnetic Alloys 銀基低抵抗温度係数合金およびその製造法
JPH11339568A (ja) * 1998-05-28 1999-12-10 Mitsubishi Materials Corp オ−ディオ用電線導体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163505A (ja) * 1985-01-14 1986-07-24 住友電気工業株式会社 画像表示機器、音響機器用導体の製造方法
JPH06235034A (ja) * 1993-02-10 1994-08-23 Res Inst Electric Magnetic Alloys 銀基低抵抗温度係数合金およびその製造法
JPH11339568A (ja) * 1998-05-28 1999-12-10 Mitsubishi Materials Corp オ−ディオ用電線導体

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10018420B2 (en) 2012-01-27 2018-07-10 Canon Denshi Kabushiki Kaisha Metal wire heat treatment method using heat treatment jig
WO2013118831A1 (fr) * 2012-02-09 2013-08-15 キヤノン電子株式会社 Procédé de production d'un fil de connexion en argent et fil de connexion en argent

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