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WO2010117548A3 - Structure de contact d'interface de couche de tco et de silicium de haute qualité pour cellules solaires à mince film de silicium - Google Patents

Structure de contact d'interface de couche de tco et de silicium de haute qualité pour cellules solaires à mince film de silicium Download PDF

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Publication number
WO2010117548A3
WO2010117548A3 PCT/US2010/027002 US2010027002W WO2010117548A3 WO 2010117548 A3 WO2010117548 A3 WO 2010117548A3 US 2010027002 W US2010027002 W US 2010027002W WO 2010117548 A3 WO2010117548 A3 WO 2010117548A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
thin film
contact structure
tco layer
interface contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/027002
Other languages
English (en)
Other versions
WO2010117548A2 (fr
Inventor
Shuran Sheng
Yong Kee Chae
Stefan Klein
Amir Al-Bayati
Bhaskar Kumar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/481,175 external-priority patent/US8895842B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to DE112010001895T priority Critical patent/DE112010001895T5/de
Priority to CN2010800125384A priority patent/CN102356474A/zh
Publication of WO2010117548A2 publication Critical patent/WO2010117548A2/fr
Publication of WO2010117548A3 publication Critical patent/WO2010117548A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/251—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising zinc oxide [ZnO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne un procédé et un appareil de formation de cellules solaires. Dans un mode de réalisation, un dispositif photovoltaïque comprend une première couche d'oxyde conducteur transparent (TCO) disposée sur un substrat, une seconde couche de TCO disposée sur la première couche de TCO, et une couche contenant du silicium de type p formée sur la seconde couche de TCO. Dans un autre mode de réalisation, un procédé de formation de dispositif photovoltaïque comprend la formation d'une première couche de TCO sur un substrat, la formation d'une seconde couche de TCO disposée sur la première couche de TCO, et la formation d'une première jonction p-i-n sur la seconde couche de TCO.
PCT/US2010/027002 2009-04-06 2010-03-11 Structure de contact d'interface de couche de tco et de silicium de haute qualité pour cellules solaires à mince film de silicium Ceased WO2010117548A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE112010001895T DE112010001895T5 (de) 2009-04-06 2010-03-11 Hochwertige Kontaktstruktur einer TCO-Silizium-Schnittstelle für hocheffiziente Dünnschicht-Silizium-Solarzellen
CN2010800125384A CN102356474A (zh) 2009-04-06 2010-03-11 高效能薄膜硅太阳能电池的高品质透明导电氧化物-硅界面接触结构

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US16711309P 2009-04-06 2009-04-06
US61/167,113 2009-04-06
US12/481,175 2009-06-09
US12/481,175 US8895842B2 (en) 2008-08-29 2009-06-09 High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells

Publications (2)

Publication Number Publication Date
WO2010117548A2 WO2010117548A2 (fr) 2010-10-14
WO2010117548A3 true WO2010117548A3 (fr) 2011-01-13

Family

ID=42936780

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/027002 Ceased WO2010117548A2 (fr) 2009-04-06 2010-03-11 Structure de contact d'interface de couche de tco et de silicium de haute qualité pour cellules solaires à mince film de silicium

Country Status (4)

Country Link
CN (1) CN102356474A (fr)
DE (1) DE112010001895T5 (fr)
TW (1) TW201041167A (fr)
WO (1) WO2010117548A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415281B (zh) * 2011-05-13 2013-11-11 Univ Nat Cheng Kung 太陽能電池元件
US11078748B2 (en) 2019-02-05 2021-08-03 Saudi Arabian Oil Company Lost circulation shapes
CN112768549B (zh) * 2021-02-09 2025-06-10 通威太阳能（成都）有限公司 一种高光电转换效率的hjt电池及其制备方法
CN113488555B (zh) * 2021-07-06 2024-06-21 安徽华晟新能源科技股份有限公司 异质结电池及制备方法、太阳能电池组件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003253435A (ja) * 2002-02-28 2003-09-10 Mitsubishi Heavy Ind Ltd 凹凸膜形成方法および光電変換素子製造方法
JP2008181965A (ja) * 2007-01-23 2008-08-07 Sharp Corp 積層型光電変換装置及びその製造方法
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4571448A (en) * 1981-11-16 1986-02-18 University Of Delaware Thin film photovoltaic solar cell and method of making the same
US4718947A (en) * 1986-04-17 1988-01-12 Solarex Corporation Superlattice doped layers for amorphous silicon photovoltaic cells
JPH0693519B2 (ja) * 1987-09-17 1994-11-16 株式会社富士電機総合研究所 非晶質光電変換装置
AUPM982294A0 (en) * 1994-12-02 1995-01-05 Pacific Solar Pty Limited Method of manufacturing a multilayer solar cell
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US6566594B2 (en) * 2000-04-05 2003-05-20 Tdk Corporation Photovoltaic element
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003253435A (ja) * 2002-02-28 2003-09-10 Mitsubishi Heavy Ind Ltd 凹凸膜形成方法および光電変換素子製造方法
US20090020154A1 (en) * 2007-01-18 2009-01-22 Shuran Sheng Multi-junction solar cells and methods and apparatuses for forming the same
JP2008181965A (ja) * 2007-01-23 2008-08-07 Sharp Corp 積層型光電変換装置及びその製造方法

Also Published As

Publication number Publication date
DE112010001895T5 (de) 2012-06-21
WO2010117548A2 (fr) 2010-10-14
CN102356474A (zh) 2012-02-15
TW201041167A (en) 2010-11-16

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