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WO2010111107A3 - Appareil et procédé pour piles solaires à contacts formés par tir laser dans des régions dopées diffusées thermiquement - Google Patents

Appareil et procédé pour piles solaires à contacts formés par tir laser dans des régions dopées diffusées thermiquement Download PDF

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Publication number
WO2010111107A3
WO2010111107A3 PCT/US2010/027777 US2010027777W WO2010111107A3 WO 2010111107 A3 WO2010111107 A3 WO 2010111107A3 US 2010027777 W US2010027777 W US 2010027777W WO 2010111107 A3 WO2010111107 A3 WO 2010111107A3
Authority
WO
WIPO (PCT)
Prior art keywords
doped regions
highly doped
solar cells
thermally diffused
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/027777
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English (en)
Other versions
WO2010111107A2 (fr
Inventor
David E. Carlson
Lian ZOU
Murray S. Bennett
George Hmung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BP Corp North America Inc
Original Assignee
BP Corp North America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BP Corp North America Inc filed Critical BP Corp North America Inc
Priority to CN2010800216805A priority Critical patent/CN102428565A/zh
Priority to JP2012502120A priority patent/JP2012521662A/ja
Priority to AU2010229103A priority patent/AU2010229103A1/en
Priority to EP10711303A priority patent/EP2412030A2/fr
Publication of WO2010111107A2 publication Critical patent/WO2010111107A2/fr
Publication of WO2010111107A3 publication Critical patent/WO2010111107A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un appareil et un procédé pour piles solaires à des contacts formés par tir laser dans des régions dopées diffusées thermiquement. La pile comprend une tranche dopée et une pluralité de premières régions fortement dopées ayant un premier type de conductivité. La pile comprend également une pluralité de secondes régions fortement dopées ayant un type de conductivité opposé au premier type de conductivité et une couche de passivation disposée au-dessus d'au moins une partie de chacune des régions de la pluralité de premières régions fortement dopées et de la pluralité de secondes régions fortement dopées. La pile comprend également un réseau de conducteurs comportant un premier conducteur et un second conducteur, et une pluralité de contacts raccordant électriquement les premières régions fortement dopées avec le premier conducteur et raccordant électriquement les secondes régions fortement dopées avec le second conducteur.
PCT/US2010/027777 2009-03-26 2010-03-18 Appareil et procédé pour piles solaires à contacts formés par tir laser dans des régions dopées diffusées thermiquement Ceased WO2010111107A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2010800216805A CN102428565A (zh) 2009-03-26 2010-03-18 用于在热扩散掺杂区域中带有激光烧结接触的太阳能电池的设备和方法
JP2012502120A JP2012521662A (ja) 2009-03-26 2010-03-18 熱拡散ドープ領域中にレーザー焼成コンタクトを有する太陽電池セルのための装置及び方法
AU2010229103A AU2010229103A1 (en) 2009-03-26 2010-03-18 Apparatus and method for solar cells with laser fired contacts in thermally diffused doped regions
EP10711303A EP2412030A2 (fr) 2009-03-26 2010-03-18 Appareil et procédé pour piles solaires à contacts formés par tir laser dans des régions dopées diffusées thermiquement

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16368709P 2009-03-26 2009-03-26
US61/163,687 2009-03-26

Publications (2)

Publication Number Publication Date
WO2010111107A2 WO2010111107A2 (fr) 2010-09-30
WO2010111107A3 true WO2010111107A3 (fr) 2011-09-09

Family

ID=42781778

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2010/027777 Ceased WO2010111107A2 (fr) 2009-03-26 2010-03-18 Appareil et procédé pour piles solaires à contacts formés par tir laser dans des régions dopées diffusées thermiquement

Country Status (7)

Country Link
US (1) US20100243041A1 (fr)
EP (1) EP2412030A2 (fr)
JP (1) JP2012521662A (fr)
KR (1) KR20110138394A (fr)
CN (1) CN102428565A (fr)
AU (1) AU2010229103A1 (fr)
WO (1) WO2010111107A2 (fr)

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AU2010229103A1 (en) 2011-11-03
KR20110138394A (ko) 2011-12-27
CN102428565A (zh) 2012-04-25

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